MOSFET - Rutronik...3 OptiMOSTM 6 Power-Transistor, 40 V BSC007N04LS6 Final Data Sheet Rev. 2.0, 2018-07-31 1 Maximum ratings at TA=25 C, unless otherwise specified Table 2 Maximum

1

BSC007N04LS6

Rev.2.0,2018-07-31Final Data Sheet

12

34

56

78

43

21

56

78

TDSON-8FL(enlargedsourceinterconnection)

8 D

7 D

6 D

5 D

S 1

S 2

S 3

G 4

MOSFETOptiMOSTM6Power-Transistor,40V

Features•Optimizedforsynchronousapplication•Verylowon-resistanceRDS(on)•100%avalanchetested•Superiorthermalresistance•N-channel•Pb-freeleadplating;RoHScompliant•Halogen-freeaccordingtoIEC61249-2-21•175°CratedProductValidationQualifiedforindustrialapplicationsaccordingtotherelevanttestsofJEDEC47/20/22

Table1KeyPerformanceParametersParameter Value UnitVDS 40 V

RDS(on),max 0.7 mΩ

ID 100 A

Qoss 103 nC

QG(0V..10V) 94 nC

QG(0V..4.5V) 45 nC

Type/OrderingCode Package Marking RelatedLinksBSC007N04LS6 TDSON-8 FL 07N04LS6 -

2

OptiMOSTM6Power-Transistor,40VBSC007N04LS6


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

3



1MaximumratingsatTA=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current ID

-----

-----

10010010010048

A

VGS=10V,TC=25°CVGS=10V,TC=100°CVGS=4.5V,TC=25°CVGS=4.5V,TC=100°CVGS=10V,TA=25°C,RTHJA=50°C/W1)

Pulsed drain current2) ID,pulse - - 400 A TA=25°CAvalanche energy, single pulse3) EAS - - 674 mJ ID=50A,RGS=25ΩGate source voltage VGS -20 - 20 V -

Power dissipation Ptot--

--

1883.0 W TC=25°C

TA=25°C,RTHJA=50°C/W1)

Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1:55/175/56

2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case,bottom RthJC - - 0.8 °C/W -

Thermal resistance, junction - case,top RthJC - - 20 °C/W -

Device on PCB,6 cm² cooling area RthJA - - 50 °C/W -

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drainconnection. PCB is vertical in still air.2) See Diagram 3 for more detailed information3) See Diagram 13 for more detailed information

4



3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0V,ID=1mAGate threshold voltage VGS(th) 1.3 - 2.3 V VDS=VGS,ID=250µA

Zero gate voltage drain current IDSS --

0.110

1100 µA VDS=40V,VGS=0V,Tj=25°C

VDS=40V,VGS=0V,Tj=125°C

Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.620.8

0.71.0 mΩ VGS=10V,ID=50A

VGS=4.5V,ID=50A

Gate resistance RG - 1 - Ω -

Transconductance gfs - 300 - S |VDS|≥2|ID|RDS(on)max,ID=50A

Table5DynamiccharacteristicsValues


Input capacitance1) Ciss - 6500 8400 pF VGS=0V,VDS=20V,f=1MHzOutput capacitance1) Coss - 2100 2700 pF VGS=0V,VDS=20V,f=1MHzReverse transfer capacitance1) Crss - 51 89 pF VGS=0V,VDS=20V,f=1MHz

Turn-on delay time td(on) - 8 - ns VDD=20V,VGS=10V,ID=20A,RG,ext=1.6Ω

Rise time tr - 6 - ns VDD=20V,VGS=10V,ID=20A,RG,ext=1.6Ω

Turn-off delay time td(off) - 40 - ns VDD=20V,VGS=10V,ID=20A,RG,ext=1.6Ω

Fall time tf - 13 - ns VDD=20V,VGS=10V,ID=20A,RG,ext=1.6Ω

Table6Gatechargecharacteristics2)Values


Gate to source charge Qgs - 17 - nC VDD=20V,ID=50A,VGS=0to10VGate charge at threshold Qg(th) - 10.3 - nC VDD=20V,ID=50A,VGS=0to10VGate to drain charge1) Qgd - 11.2 - nC VDD=20V,ID=50A,VGS=0to10VSwitching charge Qsw - 18 - nC VDD=20V,ID=50A,VGS=0to10VGate charge total1) Qg - 94 - nC VDD=20V,ID=50A,VGS=0to10VGate plateau voltage Vplateau - 2.6 - V VDD=20V,ID=50A,VGS=0to10VGate charge total Qg - 45 - nC VDD=20V,ID=50A,VGS=0to4.5VGate charge total, sync. FET Qg(sync) - 39 - nC VDS=0.1V,VGS=0to4.5VOutput charge1) Qoss - 103 - nC VDD=20V,VGS=0V

1) Defined by design. Not subject to production test.2) See ″Gate charge waveforms″ for parameter definition

5



Table7ReversediodeValues


Diode continuous forward current IS - - 100 A TC=25°CDiode pulse current IS,pulse - - 400 A TC=25°CDiode forward voltage VSD - 0.78 1 V VGS=0V,IF=50A,Tj=25°CReverse recovery time1) trr - 36 - ns VR=20V,IF=10A,diF/dt=400A/µsReverse recovery charge1) Qrr - 133 - nC VR=20V,IF=10A,diF/dt=400A/µs

1) Defined by design. Not subject to production test.

6



4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 150 175 2000

25

50

75

100

125

150

175

200

Ptot=f(TC)

Diagram2:Draincurrent

TC[°C]

ID[A

]

0 25 50 75 100 125 150 175 2000

100

200

300

400

500package limitsilicon limit

ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

10-1 100 101 10210-2

10-1

100

101

102

103

1 µs10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-1 10010-2

10-1

100

101

single pulse0.010.020.050.10.20.5

ZthJC=f(tp);parameter:D=tp/T

7



Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0.0 0.5 1.0 1.5 2.0 2.5 3.00

50

100

150

200

250

300

350

400

3.5 V

4 V

4.5 V

5 V

10 V 3 V

2.8 V

ID=f(VDS),Tj=25°C;parameter:VGS

Diagram6:Typ.drain-sourceonresistance

ID[A]

RDS(on

) [m

Ω]

0 25 50 75 100 125 150 175 2000.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.003 V

3.5 V

4 V

4.5 V5 V

10 V

RDS(on)=f(ID),Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 1 2 3 4 50

50

100

150

200

250

300

350

400

175 °C25 °C

ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj

Diagram8:Typ.drain-sourceonresistance

VGS[V]

RDS(on

) [m

Ω]

0 2 4 6 8 100.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

175 °C

25 °C

RDS(on)=f(VGS),ID=50A;parameter:Tj

8



Diagram9:Normalizeddrain-sourceonresistance

Tj[°C]

RDS(on

) (normalizedto

25°C)

-80 -40 0 40 80 120 160 2000.0

0.4

0.8

1.2

1.6

2.0

RDS(on)=f(Tj),ID=50A,VGS=10V

Diagram10:Typ.gatethresholdvoltage

Tj[°C]

VGS(th) [V]

-80 -40 0 40 80 120 160 2000.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2500 µA

250 µA

VGS(th=f(Tj),VGS=VDS;parameter:ID

Diagram11:Typ.capacitances

VDS[V]

C[p

F]

0 5 10 15 20 25 30 35 40101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram12:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4100

101

102

103

25 °C25 °C, max175 °C175 °C, max

IF=f(VSD);parameter:Tj

9



Diagram13:Avalanchecharacteristics

tAV[µs]

IAV [A]

100 101 102 103100

101

102

25 °C

100 °C

150 °C

IAS=f(tAV);RGS=25Ω;parameter:Tj,start

Diagram14:Typ.gatecharge

Qgate[nC]

VGS [V]

0 20 40 60 80 1000

2

4

6

8

108 V20 V32 V

VGS=f(Qgate),ID=50Apulsed,Tj=25°C;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-80 -40 0 40 80 120 160 20038

39

40

41

42

43

44

VBR(DSS)=f(Tj);ID=1mA

Diagram Gate charge waveforms

10



5PackageOutlines

Figure1OutlineTDSON-8FL,dimensionsinmm/inches

11



Figure2OutlineBoardpads(TDSON-8FL)

12



RevisionHistoryBSC007N04LS6

Revision:2018-07-31,Rev.2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2018-07-31 Release of final version

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Documents

MOSFET - Rutronik...3 OptiMOSTM 6 Power-Transistor, 40 V BSC007N04LS6 Final Data Sheet Rev. 2.0, 2018-07-31 1 Maximum ratings at TA=25 C, unless otherwise specified Table 2 Maximum