Upload
duongkiet
View
243
Download
1
Embed Size (px)
Citation preview
Thermal Characteristics
FQA140N10N-Channel QFET® MOSFET100 V, 140 A, 10 mΩ
Description
©2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C2
www.fairchildsemi.com1
FQA140N
10 — N
-Channel Q
FET® M
OSFET
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features• 140 A, 100 V, RDS(on) = 10 mΩ (Max.) @ VGS = 10 V,
ID =
• Low Gate Charge (Typ. 0 nC)
• Low Crss (Typ. 470 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
• 17
TO-3PNG
DS
G
S
D
Symbol Parameter FQA140N10 UnitVDSS Drain-Source Voltage 100 V
ID Drain Current - Continuous (TC = 25°C) 140 A
- Continuous (TC = 100°C) 99 A
IDM Drain Current - Pulsed (Note 1) 560 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy (Note 2) 1500 mJ
IAR Avalanche Current (Note 1) 140 A
EAR Repetitive Avalanche Energy (Note 1) 37.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/nsPD Power Dissipation (TC = 25°C) 375 W
- Derate above 25°C 2.5 W/°CTJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
TLMaximum lead temperature for soldering purposes, 1/8" from case for 5 seconds.
300 °C
FQA140N10
+θ Thermal Resistance, Junction-to-Case, Max. 0.4 6?
+θ Thermal Resistance, Junction-to-Ambient, Max. 40 6?
70 A
June 2014
Package Marking and Ordering Information
©2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C2
www.fairchildsemi.com2
FQA140N
10 — N
-Channel Q
FET® M
OSFET
Part Number Top Mark Package Reel Size Tape Width QuantityFQA140N10FQA140N10 TO-3PN N/A N/A 30 units
Packing MethodTube
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 100 -- -- V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature Coefficient
ID = 250 μA, Referenced to 25°C -- 0.08 -- V/°C
IDSSZero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V -- -- 1 μA
VDS = 64 V, TC = 150°C -- -- 10 μA
IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA
On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 2.0 -- 4.0 V
RDS(on) Static Drain-Source On-Resistance
VGS = 10 V, ID = 70 A -- 0.008 0.01 Ω
gFS Forward Transconductance VDS = 30 V, ID = 70 A -- 80 -- S
Dynamic CharacteristicsCiss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 6100 7900 pF
Coss Output Capacitance -- 2000 2600 pF
Crss Reverse Transfer Capacitance -- 420 550 pF
Switching Characteristics td(on) Turn-On Delay Time
VDD = 40 V, ID = 140 A,
RG = 25 Ω
-- 75 160 ns
tr Turn-On Rise Time -- 940 1890 ns
td(off) Turn-Off Delay Time -- 350 710 ns
tf Turn-Off Fall Time -- 360 730 ns
Qg Total Gate Charge VDS = 64 V, ID = 140 A,
VGS = 10 V
-- 220 285 nC
Qgs Gate-Source Charge -- 39 -- nC
Qgd Gate-Drain Charge -- 114 -- nC
Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 140 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 560 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 140 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 140 A,
dIF / dt = 100 A/μs
-- 140 -- ns
Qrr Reverse Recovery Charge -- 730 -- nC
Notes:1. Repetitive rating : pulse-width limited by maximum junction temperature.2. L = 0.115 mH, IAS = 140 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.3. ISD ≤ 140 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature.5. Continuous drain current calculated by maximum junction temperature : limited by package.
(Note 4)
(Note 4)
Note 5) (
©2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C2
www.fairchildsemi.com3
FQA140N
10 — N
-Channel Q
FET® M
OSFET
Typical Characteristics
2 4 6 8 1010
-1
100
101
102
※ Notes :1. V
DS = 40V
2. 250μs Pulse Test
-55
175
25
I D ,
Dra
in C
urre
nt
[A
]
VGS
, Gate-Source Voltage [V]
20. 0.4 60. 0.8 01. 1.2 41. 1.6 81. 2.010
-1
100
101
102
25175 ※ Notes :1. V
GS = 0V
2. 250μs Pulse Test
I DR ,
Re
vers
e D
rain
Cur
ren
t [
A]
VSD
, Source-Drain Voltage [V]0 100 200 300 400 500 600 700 800 900
0
5
10
15
20
25
30
※ Note : TJ = 25
VGS
= 20V
VGS
= 10V
RD
S(O
N) [
mΩ
],D
rain
-Sou
rce
On-
Res
ista
nce
ID , Drain Current [A]
10-1 0
101
101
102
VGS
Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V
Bottom : 4.5 V
※ Notes :1. 250μs Pulse Test2. T
C = 25
I D,
Dra
in C
urr
ent
[A]
10
VDS
, Drain-Source Voltage [V]
10-1 0 1010
2000
4000
6000
8000
10000
12000
14000
16000
18000
20000C
iss = C
gs + C
gd (C
ds = shorted)
Coss
= Cds + C
gd
Crss
= Cgd
※ Notes :1. V
GS = 0 V
2. f = 1 MHzCrss
Coss
Ciss
Ca
paci
tan
ce [p
F]
10
VDS
, Drain-Source Voltage [V]
0 40 80 120 160 200 2400
2
4
6
8
10
12
VDS
= 50V
VDS
= 80V
※ Note : ID = 140 A
VG
S,
Gat
e-S
ourc
e V
olta
ge
[V]
QG, Total Gate Charge [nC]
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
©2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C2
www.fairchildsemi.com4
FQA140N
10 — N
-Channel Q
FET® M
OSFET
Typical Characteristics (Continued)
Z JC
(t), T
herm
al R
espo
nse
[o C/W
]
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
※ Notes : 1. V
GS = 0 V
2. ID = 250 μA
BV
DS
S,
(Nor
mal
ized
)D
rain
-Sou
rce
Bre
akdo
wn
Vol
tag
e
TJ, Junction Temperature [
oC]
-100 -50 0 50 100 150 2000.0
0.5
1.0
1.5
2.0
2.5
※ Notes :1. V
GS = 10 V
2. ID = 70 A
RD
S(O
N),
(Nor
mal
ized
)D
rain
-So
urce
On-
Re
sist
ance
TJ, Junction Temperature [
oC]
1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1
1 0 -2
1 0 1- ※ N o te s : 1 . Z
θ J C( t) = 0 .4 /W M a x .
2 . D u ty F a c to r , D = t1/ t
2
3 . TJ M
- TC
= PD M
* Zθ J C
( t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
25 50 75 100 125 150 1750
30
60
90
120
150
Limited by Package
I D,
Dra
in C
urr
ent [
A]
TC, Case Temperature []
100
101
102
10-1
100
101
102
103
10 μs
DC10 ms
1 ms
100 μs
Operation in This Area is Limited by R
DS(on)
※ Notes :
1. TC = 25
oC
2. TJ = 175
oC
3. Single Pulse
I D,
Dra
in C
urr
ent
[A]
VDS
, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Currentvs. Case Temperature
Figure 7. Breakdown Voltage Variationvs. Temperature
Figure 8. On-Resistance Variationvs. Temperature
t1, S q u a re W a v e P u ls e D u ra t io n [s e c ]
Figure 11. Transient Thermal Response Curve
t1
PDM
t2
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
Charge
VGS
10VQg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF12V
Same Typeas DUT
Charge
VGS
10VQg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF12V
Same Typeas DUT
EAS = L IAS2----
21 --------------------
BVDSS - VDD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
I D
t p
EAS = L IAS2----
21
EAS = L IAS2----
21----21 --------------------
BVDSS - VDD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
I DI D
t p
VGSVGS
IG = const.
©2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C2
www.fairchildsemi.com5
FQA140N
10 — N
-Channel Q
FET® M
OSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
DriverRG
Same Type as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LI SD
10VVGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse Width
Gate Pulse Period--------------------------
DUT
VDS
+
_
DriverRG
Same Type as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LLI SD
10VVGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse Width
Gate Pulse Period--------------------------D =Gate Pulse Width
Gate Pulse Period--------------------------
©2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C2
www.fairchildsemi.com6
FQA140N
10 — N
-Channel Q
FET® M
OSFET
©2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C2
www.fairchildsemi.com7
FQA140N
10 — N
-Channel Q
FET® M
OSFET
Mechanical Dimensions
Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003
www.fairchildsemi.com8
FQA140N
10 — N
-Channel Q
FET® M
OSFET
TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONSDefinition of Terms
AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®
Dual Cool™EcoSPARK®
EfficentMax™ESBC™
Fairchild®
Fairchild Semiconductor®FACT Quiet Series™FACT®
FAST®
FastvCore™FETBench™FPS™
F-PFS™FRFET®
Global Power ResourceSM
GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®OptoHiT™OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™Programmable Active Droop™QFET®
QS™Quiet Series™RapidConfigure™
Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®
STEALTH™SuperFET®
SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®
SyncFET™Sync-Lock™
®*
TinyBoost®TinyBuck®
TinyCalc™TinyLogic®
TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*μSerDes™
UHC®
Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™仙童 ™
®
™
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
Rev. I68
tm
®
©2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C2
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor:
FQA140N10