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F R A U N H O F E R - C E N t E R N A N O E l E C t R O N i C t E C H N O l O g i E s
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NANOPATTERNING USING E-BEAM LITHOGRAPHY
task definition
Creation of resist pattern with structure
sizes down to 32nm using electron beam
lithography (E-Beam).
Provide customer and application specific
designs and layouts on 200 mm or 300 mm
wafers applying advanced maskless direct
writing technique.
methodology
The electron beam lithography is a very fle-
xible method to create arbitrary structures
with resolution down to a few nanometers.
The electron sensitive resist is coated onto a
wafer and an electron beam scans along its
surface with the energy of 50keV. Throug-
hout the scanning, the resist is chemically
modified in exposed areas and an image in
the resist is created. During the following
aqueous development the exposed material
either remains or is removed depending
on the tonality of the resist (positive or
negative). The patterned structures serve as
a mask for further processing steps such as
etching or implanting.
technical data
Vistec SB3050DW
• 50keV high resolution electron optics
with a writing grid of 1nm
• Fast variable shaped beam technology
(VSB vector scan)
• Direct writing down to 32nm resolution
• Continuous writing process via moving
200&300mm stage (write-on-the-fly)
• Overlay accuracy: 12-20nm
1 Lines/Space pattern exposed by
E-Beam – 40nm line width in resist
2 Conductive circuits in aluminum
for DRAM applications
3 Ring structures for MEMS
applications
Fraunhofer-Center
Nanoelectronic Technologies
Koenigsbruecker Str. 180
01099 Dresden I Germany
contact
Dr. Christoph Hohle
phone +49 351 2607 3013
Dr. Philipp Jaschinsky
phone +49 351 2607 3026
www.cnt.fraunhofer.de
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applications
• Fabrication of test structures for
technology development
• Structuring of Application Specific
Integrated Circuits (ASICS)
• Ground-Rule learning for future
technology nodes
• Design tests of innovative devices and
cell concepts and their variation on a
wafer (Chip Shuttle)
• Correction of design or process errors in
finalized CMOS structures (Metal Fix)
• Calibration pattern for metrology
development
• MEMS and NEMS patterning with
productive quality
• “Mix & Match” with optical exposure
techniques
1 2
1 Ring structures for MEMS
applications
2 Vistec SB3050DW Variable-
Shaped E-Beam Writer
advantages
Fast
• Direct maskless patterning
• Realization of customer specific
patterning “overnight”
• Subsequent design changes can directly
be implemented in process flow
• No need for optical proximity correction
(OPC)
Fine
• Structuring without optical
diffraction limit
• Provide high resolution down to
32nm (half pitch)
Flexible
• Simultaneous exposure of various
designs or layout variations on single
wafer
TEL ACT 12 CleanTrack
• Resist coating and development on
300mm wafers
• Processing of chemically amplified (CAR)
and non chemically amplified (nonCAR)
E-Beam resists
• Additionally processing of ArF, KrF and
i-line resists possible
AMAT Verity 4i CD-SEM
• Resolution down to 1.6nm (200&300mm
capability)
• Precision: 0.4nm
(placement accuracy: 7nm)
• High throughput (40 wafers/h with
20 measurement positions / wafer)
• Active noise suppression
• Overlay measurement algorithm available
Leica INS3300 Inspection&Review Station
• 200&300mm optical inspection
• ADC – defect classification
• Spot-Check Software
• Overlay measurement possible
• Including DUV optics (80nm resolution)
functional principle of electron beam writing
A,B cross-section of the Vistec SB3050DW electron columnC principle of electron beam writing
A b C
