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oRD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014
Pixel : LS1, Run2 and Fase 2
Slides per Clara
17 September 2014
G. Darbo– INFN / Genova
Indico agenda:• https://agenda.infn.it/conferenceDisplay.py?confId=8420
RD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014 2
2014 Activities – 2015 Plan2014: CSN1 funded (Feb and May) R&D Phase 2 activities for ATLAS & CMS inner trackers.• Development of 3D and Active Edge sensors with FBK – 3 Batches (ATLAS/CMS)• Bump-bonding: development of Indium bumps (6” sensors) and produce modules• Develop a technology for pixel detector hybridization using C (dielectric) instead of R
(bump-bonding) coupling• Completion of CO2 test plant (combined ATLAS / LHCb)
2015: Activities and line of funding• Continue with 3D Sensor plan: produce modules, test in lab and TB, irradiate, procure
sensors for next FBK run.• Bump-bonding: for testing FBK sensors and to develop for future RD53 requirements• CO2 cooling: contribute to ATLAS stave R&D, thermal simulation and test with CO2
plant• Multi-module R/O: use leading experience of ROD designer (BO) to develop a 16
module table-top road for architecture study and for test-beam application.• Upgrade to USBPix3: most diffused single module system based on USB. Upgrade also
for use if HV/HR-CMOS• HV/HR-CMOS: presented a new project in CSN5 (BO, GE, MI)
RD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014 3
3D Sensor Program - 2014Planned 3 run at FBK in 2014 – Funded by CSN1 in Feb• No.1: DRIE process setting up for thin columns. Process in completion. Found that 5-6
µm are the best suitable column diameter.
• No.2: test planar process with SiSi DWB and Epi substrates. Layout completed, mask submission, wafer expected in 6 weeks.
• No.3: 3D single side process with SiSi DWB and Epi substrates. Layout in discussion. Compatible layout with other foundries (CNM) to simplify common test of devices.
Note:• A second 3D run is foreseen at the
end of 2015 / early 2016 – layout matching RD-53 layout.
Schedule presented in Feb’14. Still up to date. Need approval from MEMS3 committee of 3rd batch!
RD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014 4
FBK: Status of BatchesBatch 1: study of columns
In measurement
Batch 2: study SiSi subtratesMask submitted 15
8 um
5.6 um
3.8 um
CMSATLAS
Test structures for Si-Si qualification
Batch 3: 3D sensors
Layout study and Simulation of a3D pixel cell
RD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014 5
CCPD HybridizationHV/HR-CMOS chip coupled capacitively to R/O chip (CCPD – Capacitively Coupled Pixel Detector) instead of “classic” bump-bonding• Develop a technique to insert uniform, well defined
thickness of dielectric between R/O and HV/HR-CMOS chips
• Should be a cost effective, rad-hard process to transfer to industry
Test program in progress:• See preliminary results next slide
Activities will continue in the HVR_CCPD project in CSN5 (new experiment)• Involving BO, GE & MI• Also scientists outside ATLAS will participate.
R/O CHIP
R/O CHIP
Process Recipe Spin SU-8 photoresistPattern pillars by mask
Spacer define the distance between chips
Target to D = 5 µm, C ~ 4 fF for 18 µm pad diameter.
Proper qualified glue
Glue deposition
R/O CHIPDETECTOR CHIPAlign & pressure
RD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014 6
Deposition of Pillars (spacers)2-inch mask below with different Densities of spacers – FE-I4/FE-I3 Structures.
SU8-2005 deposited on 2-inch wafer from Siegert
Credits: V. Ceriale
FE-I4 with matrix of SU8 spacers:200 µm x 200 µm columns 4.7 µm high
FE-I4 with matrix of SU8 spacers:40 µm x 40 µm columns 4.7 µm high
RD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014 7
2014 - CO2 Cooling Plant
Attilio…
RD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014 8
Milestones
RD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014 9
SPARE SLIDES
RD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014 10
3D Sensors – Proposed Process
New generation of 3D sensors• 6” wafer new process at FBK• Smaller pixel (event pileup)• reduce column distance (2x1016 neq/cm2) • Thinner pixel (≤1.5ke threshold)• TCAD simulation: Optimal Q, Lower Cdet ,… • Bias voltage applied to back side (as IBL)
Single side 3D process on:• Si-Si DWB (Direct Wafer Bonding)• Epitaxial wafers
P+ Epi layer / P+ High Ω•cm wafer
P++ Low Ω•cm wafer
-Vb
Charge Amp.Bump-bond
100÷150µm
metal
Thin-down
TCAD capacitance simulation
• Layout: 2 n-columns in 25x150 µm2
• Total capacitance for dcol=5µm• 100 µm thick 71 fF/pix• 150 µm thick 88 fF/pix
• It was 200 fF/pix for IBL
Single side 3D process
p++ col
n++ col
Epi –
SiS
i DW
B
RD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014 11
DRIE for Ohmic Columns
158
um
5.6 um
3.8 um
7.6 um
RD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014 12
DRIE for Junction Columns
ID# Nominal diameter (um)
Depth(um)
Surface diameter (um)
Diameter at tip (um)
5.1 5 99 3.5 3.2
5.5 5 99.5 5.5 2.95.5 5 100 5.5 3.55.6 5 98 4.3 2.65.8 5 98 5.5 2.65.9 5 98 3.9 2.95.10 5 95 3.3 2.75.11 5 95 3.3 2.7
LEFT
CENTER
RIGHT
RD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014 13
Planar test batch
CMSATLAS
Test structures for Si-Si qualification
• p-type SiSi DWB wafers from ICEMOS
• 100-mm and 130-mm HR active sensor thickness
•p-spray & p-stop isolation
•Layout ready, masks ordered
• To start now, to be completedin 6-7 weeks
RD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014 14
Wafers Sets – To Bump-Bond
In program 4 sensor batches that would need BB in 2014/15:• 3D double side – October - Funds (MI) assigned for 2014• Planar ATLAS/CMS Batch 2 – November – Funds (FI/PI) assigned 2014• 3D and Active edge batches coming 2015 – no funds yet. In 2015 request
14
ATLAS FE-I4 (13x) CMS Single chip (24x)(1E, 2E, 3E, 4E)
CMS Quads (6x)(2E, 3E)
MEDIPIX2 (4x)
NA62 test chip (20x)
CMSATLAS
Test structures for Si-Si qualification
3D Double Side Batch Planar ATLAS/CMS “Batch 2”
RD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014 15
SU8-2005 Results
1.26 µm of bow. Column highs are very uniform: 4.7 µm over 2 cmResults obtained with a spinning rotation of 2500 rpm and SU8-2005
Profile scan direction
RD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014 16
Future Plan: M-Module R/OLe caratteristiche della scheda sono:• Completa compatibilità firmware e software con il ROD/BOC IBL ROD/BOC in one card• Possibilità di operare senza crate (table-top)• Connessione ottica o elettrica di 16 FE-I4• Possibilità di connessione esterna via Gbit ETH, S-Link (Modalità compatibile con FW/SW IBL)• Possibilità di utilizzo per test GBT/FELIX, con uscita PCIe e protocolli Infiniband, rapid-io, 40-100 GBe
Costi:• Prototipaggio e fabbricazione di due schede 10 k€• Realizzazione di 5 schede per i laboratori italiani 15 k€• Componenti off-shelf per il sistema 10 k€
Attività BO-GEPrototipi 2015Produzione 5 schede 2016
RD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014 17
Got Funded3D• Funded 3 batches at FBK: • Mechanical test – approved by MEMS3 committee – order placed (3x2200 €)• Simple planar to qualify substrates – approved by MEMS3 – order placed (6x2200 €)• 3D batch, single side, on hold waiting batch 2.
• Substrates• Ordered 55 wafers from IceMOS (SiSi wafer bonded) – material is on shipment• Looking for Epi wafers – indirect contact with SHINETSU – offer received (25 wafers –
11.9 kCHF) – doubts on specifications (epi-layer thickness spread: 104÷156 µm!)
Bump-bonding• Funded 20 k€ for BB at Selex + 7 k€ for FE-I4B• Bump-bond 3D sensors in production at FBK – old design IBL-like • Develop In-bumps for high density – incomplete funding (cut the dummy wafers).
HV-CMOS hybridization• FE-I4B plus consumables to test hybridization
CO2 cooling• Funded TRACI CO2 cooler