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1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics, Tulane University, New Orleans, U.S.A. [email protected] or: Oxides, STM, and DFT: A Happy Marriage 2 Surfaces of Metal Oxides: Most metals are oxidized in the ambient. Metal oxides exhibit an extremely wide variation in their chemical and physical properties (e.g., superconductors to best insulators) Metal oxides are important for many applications. (And surfaces are critical in most of them.) Surfaces of metal oxides are challenging (different phases, prepration /chemical potential dependent surfaces…) Defects are important! Local probes (STM) + DFT + spectroscopies

or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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Page 1: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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1

Surface Studies of Semiconducting MetalOxides

Ulrike DieboldDepartment of Physics, Tulane University, New Orleans, U.S.A.

[email protected]

or:

Oxides, STM, and DFT:A Happy Marriage

2

Surfaces of Metal Oxides:

• Most metals are oxidized in the ambient.• Metal oxides exhibit an extremely wide

variation in their chemical and physicalproperties (e.g., superconductors to best insulators)

• Metal oxides are important for manyapplications. (And surfaces are critical in most ofthem.)

• Surfaces of metal oxides are challenging(different phases, prepration /chemical potentialdependent surfaces…)

• Defects are important!– Local probes (STM) + DFT + spectroscopies

Page 2: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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3

TiO2 (mostly)

(some SnO2)

4

Titanium - Oxygen Phase Diagram

Page 3: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,
Page 4: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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7

Stability of Polar Surfaces Electrostatic Considerations:

(P.W. Tasker, J. Phys. C 12 (1979) 4977 More recent and improved: Noguera, Jackowski)

type 1: One-layer repeat unit

! = 0,

dipole moment µ =0

+ - + -

+ - + -

+ - + -

+ - + -

+ - + -

+ - + -

+ - + -

type 2: 3-layer symmetrical

repeat unit

! = 0,

dipole moment µ =0

-

2+

--

2+

-

-

+

-+

-

+

type 3: two

-layer repeat unit

! ! 0,

dipole moment µ ! 0

very stable. stable.

generally very unstable.

Rocksalt (100):CaF2 (111):

a

c

a = 3.25 Å

c

ZnO (0001):

8

[110]

[110]

[001]

TiO2 Rutile (110)

OTi

Page 5: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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9

Interest in TiO2

U. Diebold. “The Surface Science of Titanium Dioxide”, Surf. Sci. Rep. 48 (2003) 53 - 229

10U. Diebold. “The Surface Science of Titanium Dioxide”, Surf. Sci. Rep. 48 (2003) 53 - 229

0

20

40

60

80

100

120

1975 1980 1985 1990 1995 2000 2005 2010

Publications on TiO2(110)

Num

ber o

f P

ublications

Year

/year

0

50

100

150

200

250

300

2002 2003 2004 2005 2006 2007 2008

Citations to U. Diebold, Surf. Sci. Rep. 2003

Num

ber

of

Citations

Year

/year

Interest in TiO2

Page 6: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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11

TiO2

Optical Properties(pigment in paints,cosmetics, opticalcoatings,photonic material)

Biocompatibility(dental and bone implants)

A

BChemical properties(heterogeneouscatalysis, oxidationreactions at lowtemperatures)

Photo-active material(self-cleaning coatings, solarcells,production of H2)

magnetic properties

?

Electronic properties(gas sensing )

1 µm

12

Message # 1

• Metal oxides (particularly TiO2) areworth your while

• For binary oxides: cut one Me -> Oper O -> me bond.

Page 7: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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13

Exception to Message # 1(bond cutting):

• SnO2.

14

1mm

(110)

Prof. R. Helbig (Erlangen)

SnO2 has the rutilestructure

(101) or (011)

(110)

M. Batzill, K. Katsiev, and U. D. , Surf. Sci. , 529/3 (2003) 295M. Batzill, K. Katsiev, J.M. Burst, U. D., A. M. Chaka, and B. Delley,Phys. Rev. B, 72 (2005) 165414

Page 8: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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15

Two surface terminations for SnO2(101):

O2-

Sn4+

The surface maintains a Sn4+O22-

stoichiometry

O-terminated surface:

Sn (5s25p2) has two stable oxidation states (+2,+4)

SnO2 and SnO are stable

Sn-terminated surface:

O2- Sn2+

Sn2+O2- stoichiometry at thesurface.

16

Oxygen terminated surface:10 mbar O2 at RT

Tin terminated surface:sputtered and annealed in UHV

60 eV106 eV

reversible

He+ ISSHe+ ISS

M. Batzill, A.M. Chaka, U. Diebold, Europhysics Lett. 65 (1) (2004) 61

Page 9: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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…much of the surface chemistry of metal oxide isdefect-driven…

V. Henrich, P.A. Cox, “The Surface Science of Metal Oxides” CambridgeUniversity Press 1994

Surface Science:

Oxygen VacanciesHydroxyls

Impurities

Step edges

Shear plances

‘The ‘Real World’:

Step Edges

ImpuritiesHydroxyls Oxygen Vacancies

….

18

[110]

[110]

[001]

Rutile (110)

Oxygen Vacancy (Point Defect)

OTi

Relaxations? -- Charlton et al, PRL 78 (1997) 495Ramamoorthy und Vanderbilt, Phys. Rev. B 49 (1994)16721Harrison et al. Faraday Discuss. 114 (1999) 305-312- LEED study (Thornton et al.) -> DFT is correct

Page 10: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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Rutile TiO2(110)point defect

Ti(5)O(3)

O(2)

Oxygen Vacancies: Changed Electronic StructureBand Gap StateClearly Ti 3d- derived

UV Photoelectron Spectroscopy of the Valence Band Region

e-

h"

Experimental:

0

0.2

0.4

0.6

0.8

1

0246810

count s

/s nor m

alize

d to flux

Binding energy (eV)

Clean Surface,annealed in UHV

Defect State

h" = 45 eV

20

Scanning Tunneling Microscopy

• Annealing in ultrahigh vacuum createsmissing oxygen atoms

• Point defects very reactive

• 5 - 10% Ovac, then reconstructions

U.D., J.F. Anderson, K.-O. Ng, D. Vanderbilt, PRL 77 (1996) 1322

• The image contrast in empty-states

STM is reversed to the

morphological topography

Page 11: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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Adsorption of Water:

Experiment:Molecular adsorption,dissociation only at defektsBrinkley et al, Surf. Sci. 395 (1998) 292;Henderson, Langmuir 12 (1996) 5093;Hugenschmid et al. Surf. Sci. 302 (1994)329

600500400300200100

Temperature (K)

1

.5

0

2.5 ML H2O/TiO2(110)TPD, m/e = 18

490

265

163

332

175

m/e

=1

8 Q

MS

sig

na

l (x

10

6c/s

)

Multilayers

2nd layer H2O (H-bonded to Obridging)

1st layer water(molecular at

terraces)

dissociatedat O vacanciesAdsorpti

on at

stepedges?

Henderson, Surf. Sci. 400 (1998) 203

Theory:mixed molecular/dissociativeadsorptionLindan, Harrison, Gillan, Kresse, Noguera,Vogtenhuber, Vittadini, Pacchioni, Casarin,Fahmi & Minot, Ferris, Bredow, Jug,Stefanovich & Truong, Langel, Nørskov,...

22

Rutile TiO2(110) point defect

Ti(5) O(3)

O(2)

Bikonda et al. Nature Materials 5 (2006) 176

Oxygen vacancies on TiO2:Water has a unity stickingcoefficient [1] anddissociates at O vacancies=> easily hydroxylated

[1] T. Engel et al, Surf. Sci.395 (1998) 292

Page 12: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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Photoemission of Water Adsorption on TiO2(011)-2x1 at 110 K:

h" = 26 eVDifference Spectra

h" = 47 eV

2 04

Band gap state increases andshifts with initial wateradsorption

Di Valentin et al, JACS127 (2005) 9895; Beck et al, Surf. Sci. Lett. 591 (2005) L267

24

Electronic structure of O vacancies and OH groups

Hybrid B3LYP functionals describelocalized gap state (C. Di Valentin, A. Selloni,

G. Pacchioni, PRL 2006)

Di Valentin et.al. PRL 2006 submitted

Oxygen vacancy

OH group

Ganduglia-Pirovano, et al.Surf. Sci Rep. 2007

Page 13: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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Message # 2Defects (O vacancies) areimportant, yet challenging

• Theorists: Mistrust theexperimentalists

• Experimentalists: Mistrust thetheorists.

26

Exception to Message # 2(reduced surfaces are reactive)

• SnO2.

Page 14: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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27

8 6 4 2 00

20

40

60

80

2.6 eV

h! = 34 eV

Counts

[a.u

.]

Binding energy [eV]

573 K 673 K 773 K 873 K 973 K

8 6 4 2 00

20

40

60

80

2.6 eV

h! = 34 eV

Counts

[a.u

.]

Binding energy [eV]

573 K 673 K 773 K 873 K 973 K

8 6 4 2 00

20

40

60

80

2.6 eV

h! = 34 eV

Counts

[a.u

.]

Binding energy [eV]

573 K 673 K 773 K 873 K 973 K

8 6 4 2 00

20

40

60

80

2.6 eV

h! = 34 eV

Counts

[a.u

.]

Binding energy [eV]

573 K 673 K 773 K 873 K 973 K

Temperature

Ultraviolet Photoemission Spectroscopy

M. Batzill, et al. Phys. Rev. B 72 (2005) 165414

Sn-5s

derived

surface

state

8 6 4 2 00

20

40

60

80

2.6 eV

h! = 34 eV

Counts

[a.u

.]

Binding energy [eV]

573 K 673 K 773 K 873 K 973 K

Sn4+

Sn2+

SnO2

28

8 6 4 2 00

20

40

60

80

2.6 eV

h! = 34 eV

Counts

[a.u

.]

Binding energy [eV]

573 K 673 K 773 K 873 K 973 K

Sn-5s derived

surface state

Sn2+

Reduced SnO2 surface:

Is quite inert!

- Water physisorbsM. Batzill, et al., Surf. Sci. 600 (2006) L29; J.Phys. C., 18 (2006) L129-L134

-Benzene interacts veryweaklyM. Batzill et al., Applied Physics Letters, 85(2004) 5766

Page 15: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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29Eads = -1.518 eV

Undercoordinated Oxygen

may act as Brønsted-base

sites=> dissociation of water

Water adsorption on oxidized and reduced SnO2(101) surfaces:

Fully coordinated Oxygen

Sn2+ cations with

chemically inert Sn-

5s lone pair.

DFT calculations by W. Bergermayer and I. Tanaka,

University of Kyoto, Japan

Eads = -0.989 eV Eads = -0.366 eV

M. Batzill, et al., Surf. Sci. 600 (2006) L29; J. Phys. C., 18 (2006) L129-L134

30

TiO2-Color Scheme

M. Li, et al., Journal of Physical Chemistry B 104 (20) (2000)4944

samples annealed in afurnace(Ar with 20ppm O2 ~4x10-3 Torr)

Page 16: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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31

[110]

[110]

[001]

Defects in TiO2-x Rutile (110)

Tiinterstitial

Ovac

32

Reduced Crystals - (1x2) Reconstruction

(1x1) with point defects

(1x2)strands

Added Ti2O3 rows - model for (1x2)reconstructionH. Onishi and Y. Iwasawa, Surf. Sci. 313,L783-L789 (1994).

Page 17: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,
Page 18: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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Message # 3

• Theorists: Think before you useordered O vacancies to modelreconstructions.

• Experimentalists: Don’t trust modelswith ordered vacancies.

36

Ti18O2

Tiinterstitial

18O2

Re-oxidation of reduced TiO2 crystals:

Page 19: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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37Pan, Maschhoff, Diebold, Madey, JVSTA 10 (1992) 2470 - 2476

38

Page 20: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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39

Reoxidation of reduced TiO2(110) singlecrystals: cycles (1x1) -> (1x2) structure

R.A. Bennett et al, Phys. Rev. Lett. 82 (1999) 3831

40

Kinetics of re-oxidation:LEEM (see Gary Kellog et al.)

Consequence:Adsorption of reactive species atelevated temperatures can reactwith subsurface defects

Page 21: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,
Page 22: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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43

TiO2:

CFM Continental Fan

• removal of organic pollutants, purifying of water or air

titaniumart.com

• self-cleaning/desinfecting coatings (bacteria, viruses, cancer cells)

Sustainable Technologies International

• solar cells

•photocatalytic splitting ofwater, production of hydrogen

TiO2 -based Photocatalysis: Applications and Promise

44

Ohno et al. New J. Chem. 26 (2002) 1167

TiO2-based Photocatalyst

Page 23: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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45

How about anatase?

46

TiO2 Anatase

(011)

(011)(101)

(101)

(001)

Calculated Wulff ShapeM. Lazzeri, A. Vittadini and A. Selloni, Phys. Rev. B,65 (2002) 119901/1, ibid. Phys. Rev. B, 63 (2001)155409/1

Natural Mineral Sample fromHangarsvidda, Norway

U. Diebold et al. Catalysis Today (2003)

Page 24: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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47

STM of TiO2 Anatase (101)

no evidence for point defects!

W. Hebenstreit, N. Ruzycki, G.S. Herman, and U.D., PRB Rapid Comm. 64 (24) (2000) R16334

48

H2O/Rutile(110):

600500400300200100

Temperature (K)

1

.5

0

2.5 ML H2O/TiO2(110)TPD, m/e = 18

490

265

163

332

175

m/e

=1

8 Q

MS

sig

na

l (x

10

6c/s

)

Multilayers

2nd layer H2O (H-bonded to Obridging)

1st layer water(molecular at

terraces)

dissociatedat O

vacancies

Adsorpt

ion atstep

edges?

Henderson, Surf. Sci. 400 (1998) 203

m/e

= 2

0 I

nte

nsity (

arb

. u

nits)

500400300200100

Temperature (K)

D2O Exposure

(molecules/cm2, x 10

14)

0 (bkgd)

1.73.45.16.88.5

10.211.913.615.3

250 K

190 K

160 K

H2O/Anatase(101):

G.S. Herman, et al. J. Phys. Chem.B 107 (2003) 2788;A. Selloni, et al, Surf Sci 402-404 (1998), 219

ca. 1 H2O/Ti(5)

Page 25: or: Oxides, STM, and DFT: A Happy Marriageth.fhi-berlin.mpg.de/th/Meetings/MarieCuriePsik2008/...1 1 Surface Studies of Semiconducting Metal Oxides Ulrike Diebold Department of Physics,

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49

STM of H2O/TiO2 Anatase:

coming soon!

50

Lessons - Surfaces of Metal Oxides

(mainly TiO2):

Defects are important:

Oxygen vacancies (challenging, theoretically andexperimentally)

Hydroxyls

Bulk - surface interplay

Step edges at oxides - interesting area of future research

TiO2 and other oxides: non-polarity of surfaces is good

guidance for predicting surface structure. Consider chemical

potential (gas phase)