Planar Diffused Silicon Photodiodes - SphereOptics · 2017. 8. 11. · 14 Photoconductive Series Typical Electro-Optical Specifications at TA=23ºC ‡ The ‘I’ suffix on the model

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13World Class Products - Light Sensing Solutions

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Photoconductive SeriesPlanar Diffused Silicon Photodiodes

FEATURES •HighSpeedResponse •LowCapacitance •LowDarkCurrent •WideDynamicRange •HighResponsivity

APPLICATIONS •PulseDetectors •OpticalCommunications •BarCodeReaders •OpticalRemoteControl •MedicalEquipment •HighSpeedPhotometry

0 5 10 15 20 250 5 10 15 20 25

Typical Spectral Response Typical Capacitance vs. Reverse Bias

Typical Dark Current vs. Temperature Typical Dark Current vs. Reverse Bias

ThePhotoconductive Detector Seriesaresuitable forhighspeedandhighsensitivityapplications.Thespectralrangeextendsfrom350to1100

nm,makingthesephotodiodesidealforvisibleandnearIRapplications,

including suchACapplications as detection of pulsed LASER sources,

LEDs,orchoppedlight.

To achieve high speeds, these detectors should be reverse biased.

Typicalresponsetimesfrom10nsto250nscanbeachievedwitha10V

reversebias, for example.Whena reversebias is applied, capacitance

decreases (as seen in the figure below) corresponding directly to an

increaseinspeed.

As indicated in the specification table, the reverse bias should not exceed 30 volts. Higher bias voltages will result in permanent damage to the detector.

Sincea reversebiasgeneratesadditionaldarkcurrent, thenoise in the

devicewillalsoincreasewithappliedbias.Forlowernoisedetectors,the

PhotovoltaicSeriesshouldbeconsidered.

Refer to the Photoconductive Mode (PC) paragraph in the “Photodiode Characteristics” section of this catalog for detailed information on electronics set up.

14

Photoconductive SeriesTypical Electro-Optical Specifications at TA=23ºC

‡The‘I’suffixonthemodelnumberisindicativeofthephotodiodechipbeingisolatedfromthepackagebyanadditionalpinconnectedtothecase.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-condensingtemperatureandstoragerange,Non-condensingenvironment.

«Minimumorderquantitiesapply

Mod

el N

um

ber

Active Area

Pea

k

Res

pon

sivi

tyW

avel

ength

Responsivityat λp

Capacitance(pF)

DarkCurrent (nA)

NEP(W/Hz)

ReverseVoltage

(V)

RiseTime(ns)

Temp.*Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)

λp(nm) (A/W) 0 V -10 V -10 V -10V

970nm

-10V632nm50 Ω

Oper

atin

g

Sto

rage

typ. min. typ. typ. typ. typ. max. typ. max. typ.

‘D’ Series, Metal Package

PIN-020A 0.20 0.51 φ

970 0.60 0.65

4 1 0.01 0.15 2.8 e-15

30

6

-40

~ +

100

-55

~ +

125

1 / TO-18 PIN-040A 0.81 1.02 φ 8 2 0.05 0.50 6.2 e-15 8

PIN-2DI ‡ 1.1 0.81 x 1.37 25 5 0.10 1.0 8.7 e-15

10 4 / TO-18

PIN-3CDI3.2 1.27 x

2.54 45 12 0.15 2 1.1 e-14PIN-3CD 7 / TO-18

PIN-5DI5.1 2.54 φ 85 15 0.25 3 1.4 e-14 12

2 / TO-5

PIN-5D 5 / TO-5

PIN-13DI13 3.6 sq 225 40 0.35 6 1.6 e-14 14

2 / TO-5

PIN-13D 5 / TO-5

PIN-6DI16.4 4.57 φ 330 60 0.5 10 1.9 e-14 17

3 / TO-8

PIN-6D 6 / TO-8

PIN-44DI44 6.6 sq 700 130 1 15 2.8 e-14 24

3 / TO-8

PIN-44D 6 / TO-8

PIN-10DI100 11.28 φ 1500 300 2 25 3.9 e-14 43

-10

~

+60

-20

~

+70

10/ Lo-Prof

PIN-10D 11 / BNC

PIN-25D 613 27.9 φ 9500 1800 15 1000 1.1 e-13 250 12 / BNC

‘O’ Series, Metal Package

OSD1-0 1 1.0 sq

900 0.47 0.54

12 3 1 3 4.5 e-14

50

10

-25

~ +

75

-40

~ +

100

7 / TO-18

OSD5-0 5 2.5 φ 50 8 5 10 1.0 e-13 8 5 / TO-5

OSD15-0 15 3.8 sq 150 20 8 15 1.3 e-13 9 5 / TO-5

OSD60-0 58 7.6 sq 600 75 15 50 1.7 e-13 14 69 / TO-8

OSD100-0A 100 11.3 φ 1000 130 30 70 2.5 e-13 19 55 /Special

‘D’ Series, Plastic Package

PIN-220D« 200 10 x 20 970 0.60 0.65 3200 600 5 100 6.2 e-14 30 75

-10

~

+60

20 ~

+

70 27 / Plastic


Photovoltaic SeriesPlanar Diffused Silicon Photodiodes

FEATURES •UltraLowNoise •HighShuntResistance •WideDynamicRange •BlueEnhanced

APPLICATIONS •Colorimeters •Photometers •SpectroscopyEquipment •Fluorescence

The Photovoltaic Detector series is utilized for applicationsrequiring high sensitivity andmoderate response speeds,with an

additionalsensitivityinthevisible-blueregionfortheblueenhanced

series.Thespectralresponserangesfrom350to1100nm,making

the regular photovoltaic devices ideal for visible and near IR

applications. For additional sensitivity in the 350 nm to 550 nm

region,theblueenhanceddevicesaremoresuitable.

These detectors have high shunt resistance and low noise, and

exhibit long term stability. Unbiased operation of these detectors

offers stability under wide temperature variations in DC or low

speedapplications.Forhigh light levels (greater than10mW/cm2),

the Photoconductive Series detectors should be considered for

betterlinearity.

These detectors are not designed to be reverse biased! Veryslightimprovementinresponsetimemaybeobtainedwithaslight

bias. Applying a reverse bias of more than a few volts (>3V) will

permanently damage the detectors. If faster response times are

required,thePhotoconductiveSeriesshouldbeconsidered.

Refer to the Photovoltaic Mode (PV) paragraph in the “Photodiode Characteristics” section of this catalog for detailed information on electronics set up.

Typical Spectral Response Typical Shunt Resistance vs. Temperature

16

Photovoltaic SeriesTypical Electro-Optical Specifications at TA=23ºC

‡The“I”suffixonthemodelnumberisindicativeofthephotodiodechipbeingisolatedfromthepackagebyanadditionalpinconnectedtothecase.Formechanicaldrawingspleaserefertopages61thru73.†OperatingTemperature:-40to+100ºC,StorageTemperature:-55to+125ºC.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.

Mod

el N

um

ber

Active Area

Pea

k

Res

pon

sivi

tyW

avel

ength

Responsivityat λp

Capacitance(pF)

ShuntResistance

(GΩ)

NEP(W/Hz)

RiseTime(ns)

Temp.*Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)λp

(nm) (A/W) 0 V -10 mV 0V970 nm

0 V632 nm

50 Ω

Oper

atin

g

Sto

rage

typ. min. typ. max. min. typ. typ. typ.

‘DP’ Series, Metal PackageCD-1705 0.88 0.93 sq 850

0.55 0.60

70

1.0 10 2.1 e-15

2000

-40

~ +

100

-55

~ +

125

68 / Plastic

PIN-2DPI ‡ 1.1 0.81 x 1.37

970

15030

4 / TO-18

PIN-125DPL 1.6 1.27 sq. 160 8 / TO-18

PIN-3CDPI3.2 1.27 x 2.54 320 0.5 5.0 3.0 e-15 50

4 / TO-18

PIN-3CDP 7 / TO-18

PIN-5DPI5.1 2.54 φ 500 0.4 4.0 3.4 e-15 60

2 / TO-5

PIN-5DP 5 / TO-5

PIN-13DPI13 3.6 sq 1200 0.35 3.5 3.6 e-15 150

2 / TO-5

PIN-13DP 5 / TO-5

PIN-6DPI16.4 4.57 φ 2000 0.2 2.0 3.9 e-15 220

3 / TO-8

PIN-6DP 6 / TO-8

PIN-44DPI44 6.6 sq 4300 0.1 1.0 4.8 e-15 475

3 / TO-8

PIN-44DP 6 / TO-8

PIN-10DPI100 11.28 φ 9800 0.05 0.2 6.8 e-15 1000

-10

~ +

60

-20

~ +

70 10/ Lo-Prof

PIN-10DP 11 / BNC

PIN-25DP 613 27.9 φ 60000 0.002 0.1 3.0 e-14 6600 12 / BNC

‘DP’ Series, Plastic Package §

PIN-220DP 200 10 x 20 970 0.55 0.60 20000 0.02 0.2 1.2 e-14 2200 -10 ~ +60

-20 ~ +70 27 / Plastic

Super Blue Enhanced ‘DP/SB’ Series, (All Specifications @ λ= 410 nm. VBIAS= 0V, RL= 50Ω)

Model No.

ActiveArea/Dimensions

Responsivity(A/W)

Capacitance(pF)

Rsh(MΩ)

NEP (W/√Hz)

Operating Current(mA)

Rise Time(µs)

-10

~ +

60

-20

~ +

70

PackageStyle ¶

mm2 mm min. typ. typ. min. typ. max. typ.

PIN-040DP/SB 0.81 1.02 φ

0.15 0.20

60 600 2.0 e-14 0.5 0.02 1 / TO-18

PIN-5DP/SB † 5.1 2.54 φ 450 150 5.2 e-14 2.0 0.2 5 / TO-5

PIN-10DP/SB100 11.28 φ 8800 10 2.0 e-13 10.0 2.0

11 / BNC

PIN-10DPI/SB 10 / Metal

PIN-220DP/SB 200 10 x 20 17000 5 2.9 e-13 10.0 4.0 27 / Plastic

‘5T’ Series, Blue

Model No.

ActiveArea/Dimensions

Responsivity(A/W) 436nm

Capacitance(pF) 0V

Rsh(MΩ)

NEP (W/√Hz)

Dark Current(nA)

Rise Time(µs)

-25

~ +

75

-45

~ +

100

PackageStyle ¶

mm2 mm min. typ. max min. typ. max. typ.

OSD1-5T 1.0 1.0 sq

0.18 0.21

35 250 2.5 e-14 1.0 7 7 / TO-18

OSD3-5T 3.0 2.5 x 1.2 80 100 3.0 e-14 2.0 9 7 / TO-18

OSD5-5T 5.0 2.5 φ 130 100 3.3 e-14 2.0 9 5 / TO-5

OSD15-5T 15.0 3.8 sq 390 50 5.6 e-14 10.0 12 5 / TO-5

OSD60-5T 62.0 7.9 sq 1800 3 2.1 e-13 25.0 30 69 / TO-8

OSD100-5TA 100.0 11.3 φ 2500 2 2.5 e-13 30.0 45 55 / Special


UV Enhanced SeriesInversion Layer and Planar Diffused Silicon Photodiodes

FEATURES •Inversionseries: 100%InternalQE •UltraHighRSH

•PlanarDiffusedSeries: IRSuppressed HighSpeedResponse HighStability •ExcellentUVresponse

APPLICATIONS •PollutionMonitoring •MedicalInstrumentation •UVExposureMeters •Spectroscopy •WaterPurification •Fluorescence

OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum.

Inversion layer structure UV enhanced photodiodes exhibit 100% internal

quantumefficiencyandarewellsuitedforlowintensitylightmeasurements.

They have high shunt resistance, low noise and high breakdown voltages.

Theresponseuniformityacrossthesurfaceandquantumefficiencyimproves

with5to10voltsappliedreversebias.Inphotovoltaicmode(unbiased),the

capacitance is higher than diffused devices but decreases rapidly with an

appliedreversebias.Photocurrentnon-linearitysetsinatlowerphotocurrents

forinversionlayerdevicescomparedtothediffusedones.Below700nm,their

responsivitiesvarylittlewithtemperature.

Planar diffused structure UV enhanced photodiodes show significant

advantages over inversion layer devices, such as lower capacitance and

higher response time.Thesedevicesexhibit linearity ofphotocurrent up to

higher light input power compared to inversion layer devices. They have

relativelylowerresponsivitiesandquantumefficienciescomparedtoinversion

layerdevices

There are two types of planar diffused UV enhanced photodiodes

available:UVDQandUVEQ.Bothserieshavealmostsimilarelectro-optical

characteristics,except in theUVEQseries,where thenear IR responsesof

thedevicesaresuppressed.Thisisespeciallydesirableifblockingthenear

IRregionofthespectrumisnecessary.UVDQdevicespeakat970nmand

UVEQdevicesat720nm (seegraph).Bothseriesmaybebiased for lower

capacitance, faster response and wider dynamic range. Or they may be

operated in thephotovoltaic (unbiased)mode forapplications requiring low

drift with temperature variations. The UVEQ devices have a higher shunt

resistance than their counterparts of UVDQ devices, but have a higher

capacitance.

ThesedetectorsareidealforcouplingtoanOP-AMPinthecurrent

modeconfigurationasshown.

18

Inversion Layer UV Enhanced PhotodiodesTypical Electro-Optical Specifications at TA=23ºC

‡The‘L’suffixonthemodelnumberisindicativeofthephotodiodechipbeingisolatedfromthepackagebyanadditionalpinconnectedtothecase.§Thephotodiodechipsin“FIL”seriesareisolatedinalowprofileplasticpackage.Theyhavealargefieldofviewaswellasinlinepins.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.


Mod

el N

um

ber

Active Area Responsivity(A/W)

Capacitance(pF)

ShuntResistance

(MΩ)

NEP(W/Hz) Reverse

Voltage(V)

RiseTime(μs)

OperatingCurrent(mA)

Temp.*Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

) 254 nm 0 V -10 mV 0V254 nm

0 V254 nm

50 Ω0 V

Oper

atin

g

Sto

rage

min. typ. max. min. typ. typ. max. typ. typ.

‘UV Enhanced’ Series, Inversion Layer, Metal PackageUV-001« 0.8 1.0 φ

0.09 0.14

60 250 500 6.4 e-14

5

0.2

0.1

-20

~ +

60

-55

~ +

80 5 / TO-5UV-005 5.1 2.54 φ 300 80 200 1.0 e-13 0.9

UV-015 15 3.05 x 3.81 800 30 100 1.4 e-13 2.0

UV-20 20 5.08 φ 1000 25 50 2.0 e-13 2.06 / TO-8

UV-35 35 6.60 x 5.33 1600 20 30 1.7 e-13 3.0

UV-5050 7.87 φ 2500 10 20 2.6 e-13 3.5

-10

~ +

60

-20

~ +

70

11 / BNC

UV-50L ‡ 10 / Lo-Prof

UV-100100 11.28 φ 4500 5 10 4.5 e-13 5.9

11 / BNC

UV-100L 10 / Lo-Prof

‘UV Enhanced’ Series, Inversion Layer, Plastic Package §

UV-35P 35 6.60 x 5.33

0.09 0.14

1600 15 30 1.7 e-13

5

3.0

0.1

-10

~ +

60

-20

~ +

70 25 / Plastic

FIL-UV50 50 7.87 φ 2500 10 20 2.1 e-13 3.5 15 / Plastic

Typical Shunt Resistance vs. Temperature Typical Spectral Response


Planar Diffused UV Enhanced PhotodiodesTypical Electro-Optical Specifications at TA=23ºC

¶Formechanicalspecificationspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.

LEFT

Typ. Responsivity with Quartz Window (TA= 25˚C)

Mod

el N

um

ber

Active Area

PeakWavelength

λ P (nm)

Responsivity(A/W)

Capacitance(pF)

ShuntResistance

(GOhm)

NEP(W/Hz)

ReverseVoltage

(V)

RiseTime(μs)

Temp.*Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)

200nm

633nm Peak 0 V -10 mV 0V

200 nm

0 V1kOhm

Op

era

tin

g

Sto

rag

e

typ. typ. typ. typ. min. typ. typ. max. typ.

UV-005DQ 5.7 2.4 x 2.4

980 0.12 0.33 0.5

65 0.3 1 3.6 E-14

5

0.2

-20

~ +

60

-55

~ +

80

5 / TO-5

UV-013DQ 13 3.6 x 3.6 150 0.2 0.8 4.1 E-14 0.5 5 / TO-5

UV-035DQ 34 5.8 x 5.8 380 0.1 0.4 5.8 E-14 1 6 / TO-8

UV-100DQ 100 10 X 10 1100 0.04 0.2 8.2 E-14 3 11 /BNC

UV-005DQC 5.7 2.4 x 2.4

980 0.12 0.33 0.5

65 0.3 1 3.6 E-14

5

0.2

-20

~ +

60

-20

~ +

80

25 /CeramicUV-035DQC 34 5.8 x 5.8 380 0.1 0.4 5.8 E-14 1

UV-100DQC 100 10 X 10 1100 0.04 0.2 8.2 E-14 3

UV-005EQ 5.7 2.4 x 2.4

720 0.12 0.34 0.36

140 2 20 8.2 E-15

5

0.5

-20

~ +

60

-55

~ +

80

5 / TO-5

UV-013EQ 13 3.6 x 3.6 280 1 10 1.1 E -14 1 5 / TO-5

UV-035EQ 34 5.8 x 5.8 800 0.5 5 1.6 E -14 2 6 / TO-8

UV-100EQ 100 10 X 10 2500 0.2 2 2.6 E -14 7 11 /BNC

UV-005EQC 5.7 2.4 x 2.4

720 0.12 0.34 0.36

140 2 20 8.2E-15

5

0.5

-20

~ +

60

-20

~ +

80

25 /CeramicUV-035EQC 34 5.8 x 5.8 800 0.5 5 1.6 E-14 2

UV-100EQC 100 10 X 10 2500 0.2 2 2.6E -14 7

‘UV-DQC’ Series Planar Diffused, Ceramic Package, Quartz Window

‘UV-EQ’ Series Planar Diffused, Metal Package, Quartz Window

‘UV-EQC’ Series Planar Diffused, Ceramic Package, Quartz Window

‘UV-DQ’ Series Planar Diffused, Metal Package, Quartz Window

0 1 2 3 4 5

24

20

16

12

8 4

0

Typ. Capacitance vs. Reverse Bias (TA= 23˚C, f=1MHz)

UV-EQ Series

UV-EQ SeriesUV-DQ Series

UV-DQ Series

20

High Speed Silicon PhotodiodesHigh Speed Silicon Series

FEATURES •LowDarkCurrent •LowCapacitance •TO-46Package •w/LensedCap •SubnsResponse

APPLICATIONS •VideoSystems •ComputersandPeripherals •IndustrialControl •GuidanceSystems •LaserMonitoring

OSI Optoelectronics High Speed Silicon series aresmallareadevicesoptimized for

fastresponsetimeorHighbandwithapplications.The BPX-65complementstherestof

thehighspeedgroupwithanindustrystandard.

Thespectralrangeforthesedevicesgoesfrom350nmto1100nm.Theresponsivityand

responsetimeareoptimizedsuchthattheHRseriesexhibitapeakresponsivityof0.50

A/Wat800nmandtypicalresponsetimesofafewhundredpicosecondsat-5V.

Note that for all high-speed photodetectors, a reverse bias is required to achieve the

fastestresponsetimes.However,thereversebiasshouldbelimitedtomaximumreverse

voltage specified to avoid damage to the detector. Output signals can be measured

directlywithanoscilloscopeorcoupledtohighfrequencyamplifiersasshowninfigure

10ofthePhotodiodeCharacteristicssectionofthecatalog.AllpartsintheHigh-Speed

siliconseriesareavailablewithaflatwindoworballlens(L).

Typical Capacitance vs. Reverse Bias

Typical Capacitance vs. Reverse Bias

Typical Frequency Response vs. Reverse Bias

Typical Frequency Response vs. Reverse Bias


High Speed Silicon SeriesTypical Electro-Optical Specifications at TA=23ºC

¶Formechanicaldrawing,pleaserefertopages61thru73.*ResponsivitiesaremeasuredforFlatwindowdevices.L-ReferstodeviceswithaBall-typelenscap.Chipcenteringiswithin+/-0.005”withrespecttoODoftheHeader.**Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.

Mod

el N

um

ber

Active Area

Pea

k W

avel

ength

(nm

)

Responsivity(A/W)

Capacitance(pF) ‡

Dark Current(nA) ‡

NEP(W/Hz) Reverse

Voltage(V)

RiseTime(ns)

Temp.**Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)

830nm 830 nm 830 nm

50 Ω

Oper

atin

g

Sto

rage

min. typ. typ. typ. typ. max. typ.

High Responsivity Series (VBIAS=-5 V)

PIN-HR005PIN-HR005L* 0.01 0.127 φ

800 0.45* 0.50*

0.8 0.03 0.8 5.0 e-15

15

0.60

-25

~ +

85

-40

~ +

100

9 / TO-1816 / TO-18

(L - BallLens Cap)

PIN-HR008PIN-HR008L* 0.03 0.203 sq 0.8 0.03 0.8 5.0 e-15 0.60

PIN-HR020PIN-HR020L* 0.20 0.508 φ 1.8 0.06 1.0 7.1 e-15 0.80

PIN-HR026PIN-HR026L* 0.34 0.660 φ 2.6 0.1 1.5 1.0 e-14 0.90

PIN-HR040PIN-HR040L* 0.77 0.991 φ 4.9 0.3 2.0 1.9 e-14 1.0

BPX-65 (VBIAS=-20 V)

BPX-65 1.0 1.0 sq 900 0.45 0.5 3.0 0.5 5.0 2.3 e-14 50 2.0 7 / TO-18

max.

Typical Spectral Response Typical Spectral Response

22

Soft X-Ray, Deep UV Enhanced SeriesInversion Layer Silicon Photodiodes

FEATURES •DirectDetection •NoBiasNeeded •HighQuantumEfficiency •LowNoise •HighVacuumCompatible •CryogenicallyCompatible •0.070nmto1100nm WavelengthRange

APPLICATIONS •ElectronDetection •MedicalInstrumentation •Dosimetry •RadiationMonitoring •X-raySpectroscopy •ChargedParticleDetection

OSI Optoelectronics’ 1990 R&D 100 award winning X-UV detector seriesareauniqueclassofsiliconphotodiodesdesignedforadditionalsensitivityintheX-Ray

region of the electromagnetic spectrumwithout use of any scintillator crystals or

screens.Overawiderangeofsensitivityfrom200nmto0.07nm(6eVto17,600eV),

oneelectron-holepair iscreatedper3.63eVof incidentenergywhichcorresponds

toextremelyhighstablequantumefficienciespredictedbyE(ph)/3.63eV(Seegraph

below).Formeasurementof radiationenergiesabove17.6keV, refer to the “Fully

DepletedHighSpeedandHighEnergyRadiationDetectors”section.

A reverse bias can be applied to reduce the capacitance and increase speed of

response. In the unbiased mode, these detectors can be used for applications

requiring low noise and low drift. These detectors are also excellent choices for

detectinglightwavelengthsbetween350to1100nm.

Thedetectorscanbecoupledtoachargesensitivepreamplifierorlow-noiseop-amp

asshowninthecircuitontheoppositepage.

Typical Quantum Efficiency

Soft X-Ray, Deep UV Enhanced PhotodiodesTypical Electro-Optical Specifications at TA=23ºC


Circuit example In this circuit example, the pre-amplifier is a FET input op-amp or acommercialchargesensitivepreamplifier.Theycanbefollowedbyoneormore amplification stages, if necessary. The counting efficiency isdirectly proportional to the incident radiation power. The reverse biasvoltagemust be selected so that the best signal-to-noise ratio isachieved. Forlownoiseapplications,allcomponentsshouldbeenclosedinametalbox.Also,thebiassupplyshouldbeeithersimplebatteriesoraverylowrippleDCsupply.

Amplifier: OPA-637,OPA-27orsimilarRF: 10MΩto10GΩ RS: 1MΩ;SmallerforHighCountingRatesCF: 1pFCD: 1pFto10µF

OUTPUT VOUT = Q / CF WhereQistheChargeCreatedByOnePhotonorOneParticle

¶Formechanicaldrawingspleaserefertopages61thru73.AllXUVdevicesaresuppliedwithremovablewindows.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.

Mod

el N

um

ber

Active Area Capacitance(nF)

Shunt Resistance(MΩ)

NEP(W/Hz)

Temp. Range*(°C)

PackageStyle ¶

Are

a (m

m2 )

Dim

ensi

on(m

m)

0 V -10 mV 0V200 nm

Oper

atin

g

Sto

rage

typ. max. min. typ. typ. max.

‘XUV’ Series Metal Package

XUV-005 5 2.57 φ 0.3 0.5 200 2000 2.9 e -15 9.1 e -15

-20

~ +

60

-20

~ +

80

22 / TO-5

XUV-020 20 5.00 φ 1.2 1.6 50 500 5.8 e -15 1.8 e -14

23 / TO-8XUV-035 35 6.78 x 5.59 2 3 30 300 7.4 e -15 2.3 e -14

XUV-100 100 11.33 φ 6 8 10 100 7.4 e -15 4.1 e -14 28 / BNC

‘XUV’ Series Ceramic Package

XUV-50C 50 8.02 φ 2 3 20 200 9.1 e -15 2.9 e -14

-20

~ +

60

-20

~ +

80

25 / Ceramic

XUV-100C100 10.00 sq 6 8 10 100 1.3 e -14 4.1 e -14 25 / Ceramic

24

High Breakdown Voltage, Fully Depleted SeriesLarge Active Area Photodiodes

FEATURES Large Active Area High Speed Detectors •LargeActiveArea •FullyDepleteable •FastResponse •UltraLowDarkCurrent •LowCapacitance

Large Active Area Radiation Detectors •LargeActiveArea •ScintillatorMountable •FullyDepleteable •UltraLowDarkCurrent •LowCapacitance •HighBreakdownVoltage

APPLICATIONS Large Active Area High Speed Detectors •LaserGuidedMissiles •LaserWarning •LaserRangeFinder •LaserAlignment •ControlSystems

Large Active Area Radiation Detectors •ElectronDetection •MedicalInstrumentation •HighEnergySpectroscopy •ChargedParticleDetection •HighEnergyPhysics •NuclearPhysics

Direct High Energy Radiation Measurement:

Both PIN-RD100 and PIN-RD100A, can also be used without any epoxy

resinorglasswindowfordirectmeasurementofhighenergyradiationsuch

asalpharaysandheavyions.Theradiationexhibitslossofenergyalonga

linearlinedeepintothesiliconafterincidentontheactivearea.

The amount of loss and the penetration depth is determined by the type

andmagnitudeoftheradiation.Inordertomeasurecompletelytheamount

ofradiation,thedepletionlayershouldbedeepenoughtocoverthewhole

track from the incident point to the stop point. This requires a high bias

applicationtofullydepletethedetector.Inspiteofthelargeactiveareaas

well ashighbias voltageapplications, thedevicesexhibit super lowdark

currents,lowcapacitancesandlowseriesresistances.

TheLargeActiveAreaHighSpeedDetectorscanbefullydepletedtoachieve

thelowestpossiblejunctioncapacitanceforfastresponsetimes.Theymay

beoperatedatahigherreversevoltage,uptothemaximumallowablevalue,

forachievingevenfasterresponsetimesinnanoseconds.Thehighreverse

biasat thispoint, increases theeffectiveelectric fieldacross the junction,

hence increasing the charge collection time in the depleted region. Note

that this isachievedwithout thesacrifice for thehigh responsivityaswell

asactivearea.

The Large Active AreaRadiationDetectors can also be fully depleted for

applicationsmeasuring high energyX-rays,-rays aswell as high energy

particles such as electrons, alpha rays and heavy ions. These types of

radiationcanbemeasuredwithtwodifferentmethods.Indirectanddirect.

Indirect High Energy Radiation Measurement:

In this method, the detectors are coupled to a scintillator crystal for

convertinghighenergy radiation intoadetectablevisiblewavelength.The

devices aremounted on a ceramic and covered with a clear layer of an

epoxyresinforanexcellentopticalcouplingtothescintillator.Thismethod

iswidelyusedindetectionofhighenergygammaraysandelectrons.Thisis

wheretheX-UVdevicesfailtomeasureenergieshigherthan17.6keV.The

typeandsizeofthescintillatorcanbeselectedbasedonradiationtypeand

magnitude.

Inadditiontotheiruseinhighenergyparticledetection,thePIN-RD100and

PIN-RD100Aarealsoexcellentchoicesfordetectionintherangebetween

350to1100nminapplicationswherealargeactiveareaandhighspeedis

desired.

These detectors can be coupled to a charge sensitive preamplifier or

lownoise op-amp as shown in the opposite page. The configuration for

indirectmeasurementisalsoshownwithascintillatorcrystal.

Typical Capacitance vs. Reverse Bias Voltage Typical Spectral Response


Fully Depleted PhotodiodesTypical Electro-Optical Specifications at TA=23ºC

DIRECT DETECTIONFor direct detection of high-energyparticles, the pre-amplifier is a FETinput op-amp, followed by oneor more amplification stages, ifnecessary, or a commercial chargesensitivepreamplifier. Thecountingefficiency is directly proportionalto the incident radiation power.The reverse bias voltage must beselectedassuchtoachievethebestsignal-to-noise ratio. For low noiseapplications, all components shouldbeenclosedinametalbox.Also,thebias supply should be either simplebatteries or a very low ripple DCsupply.Thedetectorshouldalsobeoperatedinthephotovoltaicmode.

Amplifier: OPA-637,OPA-27orsimilarRF: 10MΩto10GΩ RS: 1MΩ;SmallerforHighCountingRatesCF: 1pFCD: 1pFto10µF

OUTPUT VOUT = Q / CF WhereQ is theChargeCreatedByOnePhotonorOneParticle

OSD-35-LR’sceramicpackagescomewithoutwindow,insteadtheopticallyclearepoxyisused.†MeasuredatVbias=-50V¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.

INDIRECT DETECTION (WITH SCINTILLATOR CRYSTAL) The circuit is very similar to the direct detectioncircuit except that the photodiode is coupled toa scintillator. The scintillator converts the high-energy X-rays and/or X-rays into visible light.Suitable scintillators include CsI(TL), CdWO4,BGO and NaI(TL). The amplifier should be aFET input op-amp, followed by one or moreamplification stages, or a commercial chargesensitivepreamplifier.Theoutputvoltagedependsprimarilyonthescintillatorefficiencyandshouldbecalibratedbyusingradioactivesources.

Mod

el N

um

ber

Active Area

Pea

k R

espon

sivi

tyW

avel

ength

(nm

)

Responsivity900 nm

Capacitance(pF)

ShuntResistance

(GΩ)

NEP(W/√Hz)

RiseTime(ns)

Temp.*Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

) A/W 0 V -10 V 900 nm0 V

632nm50Ω

Oper

atin

g

Sto

rage

typ. typ. min. typ. typ. typ.

OSD35-LR Series

OSD35-LR-A 34.2 5.8 x 5.9 830 0.54 1300 2 3 5.6 e-15 ---

-25

~+

75

-45

~ +

100

25 / Ceramic

OSD35-LR-D 34.2 5.8 x 5.9 830 0.54 1300 0.1 0.3 1.8 e-14 ---

Mod

el N

um

ber

Active Area

Pea

k R

espon

sivi

tyW

avel

ength

(nm

)

Responsivity(A/W)

Dep

leti

onV

olta

ge

Dark Current(nA)

Capacitance(pF)

Rise Time(ns)

NEP(W/√Hz)

ReverseVoltage

(V)

Temp.*Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

) 900 nm V -100 V -100 V900 nm-100 V50Ω

900nm-100V 10 µA

Oper

atin

g

Sto

rage

typ. typ. typ. max. typ. max. typ. typ. max.

Large Active Area, High Speed

PIN-RD07 7.1 3.00 φ900

0.55 48 0.2 5.0 8.0 9.0 1.5 1.2 e-14 135

-40 ~

+10

0

-55 ~

+12

5

26 / TO-8PIN-RD15 14.9 4.35 φ 0.58 55 1.0 30 14 16 3.0 2.5 e-14 140

PIN-RD100 100 10 Sq950 0.60

75 2 10 50 60 40 3.2 e-14 120

-20 ~

+60 -20 ~

+80 25 /

CeramicPIN-RD100A 100 10 Sq 35 2 † 10 † 40 † 45 † 6 3.4 e-14 70

26

Multi-Channel X-Ray Detector SeriesScintillator Compatible Photodiode Arrays

FEATURES •ScintillatorPlatform •5VoltBias •Channelspacingvariety

APPLICATIONS •PositionSensors •Multi-channelGammacounting •X-raySecuritySystems

This series consists of 16-element arrays: the individualelementsare

groupedtogetherandmountedonPCB.

ForX-rayorGamma-rayapplication, thesemulti-channeldetectorsoffer

scintillator-mountingoptions:BGO, CdWO4 or CsI(TI).

BGO (BismuthGermanate)actsasan idealenergyabsorber: it iswidely

acceptedinhigh-energydetectionapplications.

CdWO4(CadmiumTungstate)exhibitssufficientlyhighlightoutput,helping

improveSpectrometryresults.

CsI(CesiumIodide)isanotherhighenergyabsorber,providingadequate

resistanceagainstmechanicalshockandthermalstress.

When coupled to scintillator, these Si arrays map any medium or high

radiationenergyovertovisiblespectrumviascatteringeffect.Also,their

specially designed PCB allows end-to-end connectivity. Multiple arrays

canbedeployedinsituationthatcallsforlargerscaleassembly.

Multi-Channel X-Ray Detector SeriesTypical Electro-Optical Specifications at TA=23ºC


Mod

el N

um

ber

Num

ber

of

Elem

ents

Active AreaPer Element

Pit

ch (

mm

) Responsivity(A/W)

DarkCurrent

(pA)

TerminalCapacitance

(pF)

Rise Time(μs)

ReverseBias(V)

NEP(W/√Hz)

Temp.Range(°C)

540 nm

930 nm -10 mV 0V, 10 KHz 0V, 1KΩ -10mV

930nm

Oper

atin

g

Sto

rage

Area (mm2)

Dimensions(mm) typ. typ. typ. typ. typ. max. typ.

Photoconductive Arrays

A2C-16-1.57 16 2.35 2.00 x 1.18 1.57 0.31 0.59 5 28 0.1 5 5.30 e-15

-10

~

+60

-20

~

+70

CATHODE

(25.0 P.D. ARRAY)8 x 2.54 = 20.32

2 4 6 8 10 12 14 16

1 3 5 7 9 11 13 15

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

1.175

25.4+0.0-0.3

(1.575)

15.24±0.1

2.0 X 45˚MARK

2.0 (4.2 P.D. ARRAY)

15 x 1.575 = 23.625

20.0±0.2

0.6±0.11.0±0.15

A2C-16-1.57

3.5±0.5

18X ø0.45

CATHODE

Mechanical Specifications (All units in mm)

28

YAG SeriesNd:YAG Optimized Photodetectors

FEATURES •Nd:YAGSensitivity •HighBreakdownVoltage •LargeArea •HighSpeed •HighAccuracy

APPLICATIONS •Nd:YAGPointing •LaserPointing&Positioning •PositionMeasurement •SurfaceProfiling •GuidanceSystems

¶Formechanicaldrawingspleaserefertopages61thru73.**Specificationsareperelement

Cap

acita

nce

Mod

el N

um

ber

Active Area

Pea

k

Res

pon

sivi

tyW

avel

ength

Responsivity(A/W)

Elem

ent

Gap

DarkCurrent

(nA)

Capacitance(pF)

Rise Time(ns)

NEP(W/√Hz)

Reverse Voltage

(V)

Temp.*Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

) λpnm

1000nm-180V

mm -180 V -180 V1064 nm-180 V50 Ω

1064 nm-180 V

100 µA

Oper

atio

ng

Sto

rage

1 µA*

typ. typ. typ. typ. max. typ. max. typ. typ. max.

Nd: YAG Optimized Single ElementPIN-5-YAG 5.1 2.54 φ

1000 0.6 -50 - 5 - 18 1.2 e-14

200

-40

~+

100

-55

~+

125

2 / T0-5

PIN-100-YAG 100 11.28 φ 75 1000 25 - 30 2.5 e-14 20 / Metal

Nd: YAG Optimized Quadrant Photodetectors**SPOT-9-YAG 19.6 10 φ

1000

0.40.1 35 250 5 1 18 3.2 e-14

200

-20

~+

60

-20

~+

80 20 / Metal

SPOT-11-YAG FL 26 11.5 φ 0.13 25 100 12 - 15 3.4 e-14 29 / Metal

SPOT-13-YAG-FL 33.7 13.1 φ 0.4 0.13 30 200 15 - 15 -300

-55

~

+12

5C

-55

~

+12

5C 29 / Metal

SPOT-15-YAG 38.5 14.0 φ 0.6 0.2 1000 3000 15 30 36 - 20 / Metal

TheYAG Series of photo detectors are optimized for high response at 1060 nm, theYAG

laser lightwavelength,andlowcapacitance,forhighspeedoperationandlownoise.These

detectorscanbeusedforsensinglowlightintensities,suchasthelightreflectedfromobjects

illuminated by a YAG laser beam for ranging applications. The SPOT Series of quadrantdetectorsarewellsuitedforaimingandpointingapplications.TheseareallNonPdevices.

These detectors can be used in the photovoltaic mode, for low speed applications requiring low noise, or in the photoconductive mode, with an applied reverse bias, for high speed applications.

Cap

acita

nce

Typical Spectral Response Typical Capacitance vs. Bias Voltage

29World Class Products - Together We Perform

Photops™Photodiode-Amplifier Hybrids

FEATURES •Detector/AmplifierCombined •AdjustableGain/Bandwidth •LowNoise •WideBandwidth •DIPPackage •LargeActiveArea

APPLICATIONS •GeneralPurposeLightDetection •LaserPowerMonitoring •MedicalAnalysis •LaserCommunications •BarCodeReaders •IndustrialControlSensors •PollutionMonitoring •GuidanceSystems •Colorimeter

The Photop™ Series,combinesaphotodiodewithanoperationalamplifierinthesame

package.Photops™general-purposedetectorshaveaspectralrangefromeither350

nmto1100nmor200nmto1100nm.Theyhaveanintegratedpackageensuringlow

noiseoutput under a varietyof operatingconditions.Theseop-ampsare specifically

selectedbyOSIOptoelectronicsengineersforcompatibilitytoourphotodiodes.Among

manyofthesespecificparametersarelownoise,lowdriftandcapabilityofsupporting

avarietyofgainsandbandwidthsdeterminedby theexternal feedbackcomponents.

OperationfromDCleveltoseveralMHzispossibleinaneitherunbiasedconfiguration

forlowspeed,lowdriftapplicationsorbiasedforfasterresponsetime.

Any modification of the above devices is possible. The modifications can be simply adding a bandpass optical filter, integration of additional chip (hybrid) components inside the same package, utilizing a different op-amp, photodetector replacement, modified package design and / or mount on PCB or ceramic.

Typical Spectral Response

Typical Responsivity vs. Frequency Typical Gain vs. Frequency

For your specific requirements, contact one of our Applications Engineers.

30

Photops™ (Photodiode Specifications)Typical Electro-Optical Specifications at TA=23ºC

¶Formechanicaldrawingspleaserefertopages61thru73.**LN–SeriesDevicesaretobeusedwitha0VBias.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.#OSI-515replacesUDT-455HS

Mod

el N

um

ber

Active Area Responsivity(A/W)

Capacitance(pF)

Dark Current

(nA) Shunt

Res

ista

nce

(MΩ

) NEP(W/√Hz)

Rev

erse

V

olta

ge Temp.*

Range(°C)

Package Style

Are

a

(mm

2)

Dim

ensi

on(m

m)

254 nm 970 nm 0 V -10 V -10 V -10

mV0 V

254 nm-10 V

970 nm V

Oper

atin

g

Sto

rage

min

.

typ.

min

.

typ.

typ.

typ.

typ.

max

.

typ.

typ.

typ.

max

.

350-1100 nm Spectral Range

UDT-4555.1 2.54 φ

--- 0.60 0.65

85 15 0.25 3

---

1.4 e -14

30**

0 ~

+ 7

0

-30

~+

100

30 / TO-5OSI-515#

UDT-020D 16 4.57 φ 330 60 0.5 10 1.9 e -14 31 / TO-8

UDT-555D 100 11.3 φ 1500 300 2 25 3.9 e -14 32 / Special

200-1100 nm Spectral Range

UDT-455UV 5.1 2.54 φ

0.10 0.14 ---

300

---

100 9.2 e -14

--- 5**

30 / TO-5

OSI-020UV 16 4.57 φ 1000 50 1.3 e -13 31 / TO-8

UDT-055UV 50 7.98 φ 2500 20 2.1 e -13 32 / Special

UDT-555UV100 11.3 φ 4500 10 2.9 e -13 32 / Special

UDT-555UV/LN**

Operational Amplifier Specifications Electro-Optical Specifications at TA=23 °C

Mod

el N

um

ber

Supply Voltage

Quiescent Supply Current (mA)

Input Offset Voltage

Tem

p.

Coe

ffic

ient

Input

Off

set

Vol

tage

Input Bias Current

GainBandwidth

Product

Slew Rate

Open Loop

Gain, DC

Input Noise

Voltage

Input Noise

Current

100 H

z

1 k

Hz

1 k

Hz

± 15 V mV µV / °C pA MHz V / µs V /mV nV/ √Hz fA/ √Hz

min

.

typ.

max

.

typ.

max

.

typ.

max

.

typ.

max

.

typ.

max

.

min

.

typ.

min

.

typ.

min

.

typ.

typ.

typ.

typ.

UDT-455

--- ±15 ±18 2.8 5.0 0.5 3 4 30 ±80 ±400 3.0 5.4 5 9 50 200 20 15 10UDT-455UV

UDT-020D

OSI-020UV --- ±15 ±18 1.8 2 0.03 0.12 0.35 1 0.5 20 --- 5.1 --- 20 1000 2000 5.8 5.1 0.8

OSI-515* --- ±15 ±18 6.5 7.2 1 3 10 --- ±15 ±40 23 26 125 140 3 6.3 --- 12 10

UDT-555UV/LN --- ±15 ±18 2.5 3.5 0.1 0.5 ±2 ±5 ±0.8 ±2 --- 2 1 2 501 1778 15 8 0.5

UDT-055UV

--- ±15 ±22 2.7 4.0 0.4 1 3 10 ±40 ±200 3.5 5.7 7.5 11 75 220 20 15 10UDT-555D

UDT-555UV


UDT-455, UDT-555D, 555UV, 055UVOSI-515: pin 1 & 5 are N/C(No offset adjustment needed).

UDT-020D, OSI-020UV

UDT-555UV/LN

Photop SeriesSchematic Diagrams

Theoutputvoltageisproportionaltothelightintensityofthelightandisgivenby:

(1)

Frequency Response (Photodiode/Amplifier Combination)

The frequency response of the photodiode / amplifier combination isdetermined by the characteristics of the photodetector, pre-amplifieraswell as the feedback resistor (RF) and feedbackcapacitor (CF). Foraknown gain, (RF), the 3dB frequency response of the detector/pre-ampcombinationisgivenby:

(2)

However,thedesiredfrequencyresponseislimitedbytheGainBandwidthProduct(GBP)oftheop-amp.Inordertohaveastableoutput,thevaluesoftheRFandCFmustbechosensuchthatthe3dBfrequencyresponseofthedetector/pre-ampcombination,belessthanthemaximumfrequencyoftheop-amp,i.e.f3dB ≤fmax.

(3)

whereCAistheamplifierinputcapacitance.

Inconclusion,anexample for frequency responsecalculations, isgivenbelow. For a gain of 108, an operating frequency of 100 Hz, and anop-ampwithGBPof5MHz:

(4)

Thus,forCF=15.9pF,CJ=15pFandCA=7pF,fmax isabout14.5kHz.Hence,thecircuitisstablesincef3dB ≤fmax.

For more detailed application specific discussions and further reading,refertotheAPPLICATIONNOTESINDEXinthecatalog.

Note: The shaded boxes represent the Photop™ components and their connections. The components outside the boxes are typical

32

Temperature (°C)

BPW-34Plastic Molded - Industry Standard

FEATURES •HighReliability •HighDensityPackage •RuggedResinMold •HighSpeedandLowDarkCurrent

APPLICATIONS •IRSensors•BarCodeScanners •ColorAnalysis •SmokeDetectors

¶Formechanicaldrawingspleaserefertopages61thru73.*Non-condensingtemperatureandstoragerange,Non-condensingenvironment.

Mod

el N

um

ber

Active Area

Pea

k

Res

pon

sivi

ty

Wav

elen

gth

Responsivityatλp

Capacitance(pF)

DarkCurrent

(nA)NEP

(W/√Hz)ReverseVoltage

(V)

RiseTime(ns)

Temp*Range(°C)

Pac

kage

Sty

le ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)

λp(nm)

(A/W) 0 V1 MHz

-10 V1MHz

-10 V -10 V970 nm

-10 V830 nm

50 Ω

Oper

atin

g

Sto

rage

typ. min. typ. typ. typ. typ. max. typ. max. typ.

BPW 34 SeriesBPW-34 «

7.25 2.69 sq. 970

0.55 0.6065 12 2 30

4.2e -1440 20

-25

~+

85

-40

~+

100 19 / Plastic

MoldedBPW-34S

BPW-34B « 0.15** 0.20** 1.3e -13**

BPW-34 series are a family of high

qualityandreliabilityplasticencapsulated

photodiodes. The devices in this series,

exhibit similar electrical characteristics,

but vary in optical response. BPW-34B

has an excellent response in the blue

regionofthespectrum.They are excellent for mounting on PCB and hand held devices in harsh environments.

Temperature (°C)

Temperature (°C)

Temperature (°C)


Typical Dark Current vs. Temperature

Typical Capacitance vs. Reverse Bias Voltage

Typical Dark Current vs. Reverse Bias

**ResponsivityandNEPvaluesfortheBPW-34Baregivenat410nm.«Minimumorderquantitiesapply


PIN-08CSL-F

Plastic Encapsulated SeriesLead Frame Molded Photodiodes

FEATURES •HighDensityPackage •RuggedMoldedPackage •LowCapacitance •LowDarkCurrent •LeadFrameStandard •SMT •MoldedLensFeature •SideLookers •FilteronChip(700nmCutoff)

APPLICATIONS •BarCodeReaders •IndustrialCounters •MeasurementandControl •IRRemoteControl •ReflectiveSwitches

OSIOptoelectronicsoffersa lineofhighqualityand reliabilityplastic

encapsulated photodiodes. These molded devices are available in a

varietyofshapesandsizesofphotodetectorsandpackages,including

industrystandardT1andT13/4,flatandlensedsidelookersaswellas

asurfacemountversion(SOT-23).Theyareexcellentformountingon

PCBandhandhelddevicesinharshenvironments.

Theyhaveanexcellent response in theNIR spectrum andarealso

available with visible blocking compounds, transmitting only in the

700-1100nmrange.Theyofferfastswitchingtime,lowcapacitanceas

wellaslowdarkcurrent.Theycanbeutilizedinbothphotoconductive

andphotovoltaicmodesofoperation.

PIN-08CSL-F

PIN-08CSL-F

PIN-08CSL-F


Typical Angular Detection Characteristics Typical Capacitance vs. Reverse Bias Voltage

34

Plastic Encapsulated Series «Typical Electro-Optical Specifications at TA=23ºC

¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.The“CSL-F”seriesisahomogeneoussiliconphotodiodeandopticalfiltercombinationdevice.Thefiltercoatingisdirectlydepositedontothechipduringwaferprocess.

Mod

el N

um

ber

Active Area

Spectral Range(nm)

ResponsivitylP=970nm

Capacitance(pF) 1 MHz

Dark Current (nA) Reverse

Voltage(V)

Rise Time (ns)

Temp.*Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

) (A/W) 0 V -10 V -10 V-10 Vpeak λ50 Ω

Oper

atin

g

Sto

rage

typ. typ. typ. typ. max. max. typ.

PIN-0.81-LLS0.81 1.02 φ 350-1100

0.55

10 2 2

30

20

11

-25

~ +

85

-40

~ +

100

62 / Leadless Ceramic

PIN-0.81-CSL 60 / Resin Molded

PIN-4.0-LLS3.9 2.31x1.68 350-1100 60 10

5


PIN-4.0-CSL 60 / Resin Molded

PIN-07-CSL8.1 2.84 Sq

350-1100

85 15 50

57 / Resin MoldedPIN-07-FSL 700-1100

PIN-07-CSLR8.1 2.84 Sq

350-110056 / Resin Molded

PIN-07-FSLR 700-1100

PIN-08-CSL-F 8.4 2.90 Sq 350-720 0.43@660nm .. 25 .. 10 75 60 / Resin Molded

PIN-8.0-LLS8.4 2.90 Sq

350-1100 0.55100 25 10

3050


PIN-8.0-CSL60 / Resin Molded

PIN-16-CSL 16 4.00 Sq 330 55 5 100

Detector-Filter Combination SeriesPlanar Diffused Silicon Photodiodes


FEATURES •CIEMatch(APseries) •FlatBandResponse(DF) •254NarrowBandpass •w/AmplifierHybrid •BNCPackages

APPLICATIONS •AnalyticalChemistry •Spectrophotometry •Densitometers •Photometry/Radiometry •Spectroradiometry •MedicalInstrumentation •LiquidChromatography

CUSTOMIZED CAPABILITIESCurrentexistingstandardphotodiodescanbemodifiedbyaddingvariousopticalfilter(s),tomatchyourspecificspectralrequirements.Thefilterscan

eitherreplacethestandardglasswindowsorbeusedinconjunctionwiththeglasswindow,dependingonthespecificrequirementand/ornatureof

thefilter.Customerfurnishedopticalfilterscanalsobeincorporatedinthepackage.Thefollowingareamongafewoftheopticalfiltertypesavailable.

Thesecoloredglassfiltersaregroupedintofourmajorcategories:ShortpassFilters,LongpassFilters,BandpassFilters,andNeutralDensityFilters.

WindowsarealsoavailablewithCustom Thin Film, Anti-reflective,Cut-on and Cut-off Filter Coatings.

ALL PHOTODIODES WITH OR WITHOUT FILTERS CAN BE CALIBRATED IN HOUSE FOR RESPONSIVITY FROM 200 NM TO 1100 NM IN 10 NM

STEPS AS WELL AS SINGLE POINT CALIBRATION. ALL OPTICAL CALIBRATIONS ARE NIST TRACEABLE.

TheDetector-Filtercombinationseriesincorporatesafilterwithaphotodiode

to achieve a tailored spectral response. OSI Optoelectronics offers a

multitudeofstandardandcustomcombinations.Uponrequest,alldetector-

filter combinations can be provided with a NIST traceable calibration

data specified in terms of Amps/Watt, Amps/lumen, Amps/lux or Amps/

footcandle.

Amongmanypossiblecustomcombinations, followingarea fewdetector-

filtercombinationsavailableasstandardparts.

PIN-10DF-isa1cm2activearea,BNCpackagedetector-filtercombination,

optimized to achieve a flat responsivity, from 450 to 950 nm. This is the

spectral response required for radiometric measurements. This type of

detectorhasseveraladvantagesoverthermopile,suchassensitivity,which

isaboutathousandtimeshigher,aswellas10timesmorestability.

PIN-10AP -isa1cm2activearea,BNCpackagedetector-filtercombination

whichduplicatestheresponseofthemostcommonlyavailableopticalaid;

thehumaneye. Theeye sensesbothbrightnessandcolor,with response

varyingasafunctionofthewavelength.Thisresponsecurveiscommonly

knownas theCIEcurve.TheAP filtersaccuratelymatch theCIEcurve to

within4%ofarea.

PIN-555AP-hasthesameopticalcharacteristicsasthePIN10-AP,withan

additionaloperationalamplifierinthesamepackage.Thepackageandthe

opampcombinationisidenticaltoUDT-555Ddetector-amplifiercombination

(Photops™).

PIN-005E-550F - uses a low cost broad bandpass filter with peaktransmissionat550nmtomimictheCIEcurveforphotometricapplications.

ThepassbandissimilartotheCIEcurve,buttheactualslopeofthespectral

responsecurveisquitedifferent.Thisdevicecanalsobeusedtoblockthe

nearIRportionofthespectralrange,700nmandabove.

PIN-005D-254F - is a 6mm2 active area,UVenhancedphotodiode-filter

combinationwhichutilizesanarrowbandpassfilterpeakingat254nm.

36

Detector-Filter Combination SeriesTypical Electro-Optical Specifications at TA=23ºC

300 400 500 600 700 800 900 1000 1100

‡Pointbypointfrom450nmto950nm.§PIN-555APisaDetector/OperationalAmplifierhybrid.ForOp-Ampspecifications,pleaseseep.29.¶Formechanicaldrawingspleaserefertopages61thru73.*=254nm**Non-condensingtemperatureandstoragerange,Non-condensingenvironment.***AreawithinCIECurve

Mod

el N

um

ber

Active Area Spectral Match

Responsivityat

550nm

Capacitance(pF)

ShuntResistance

(MΩ)

NEP(W/√Hz)

Rise Time (µs)

Temp.Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)

λp(nm) (A/W) mA/Lum 0 V -10 mV -10mV

550 nm

0 V550 nm

50 Ω

Oper

atin

g

Sto

rage

typ. typ. typ. typ. typ. typ.

Detector Filter Combination SeriesPIN-10DF

100 11.28 φ

± 7% ‡ 0.15 ---

1500 20

1.9 e-13 1.0

0 ~

+70

-25

~ +

85

13 / BNCPIN-10AP-1

4%*** 0.27 0.4 1.1 e-130.15

PIN-555AP-1§

0.1*

33 / Special

PIN-005E-550F5.7 2.4 sq. ---

0.23---

200 500 2.5 e-14 5 / TO-5

PIN-005D-254F 0.025* 100 300 3.0 e-13* 18 / TO-5


300 400 500 600 700 800 900 1000 1100

300 400 500 600 700 800 900 1000 1100

300 400 500 600 700 800 900 1000 1100




Series EEye Response Detectors

Series E photodiodes are Blue-enhanced detectors with high quality color-correcting filters. The resulting spectral response approximates that of the human eye.

InadditiontotheSeriesEphotodiodeslisted,OSIOptoelectronics

can provide other photodiodes in this catalog with a variety of

opticalfilters.

Luxlx (lm/m2)

PhotPh (lm/cm2)

Foot-candlefc (lm/ft2)

Watt per square cm*

W/cm2

1 1.000 x 10-4 9.290 x 10-2 5.0 x 10-6

1.000 x 104 1 9.290 x 102 9.290 x 10-2

1.076 x 101 1.076 x 10-3 1 5.0 x 10-5

2.0 x 105 1.0 x 101 1.9 x 104 1

Mod

el N

um

ber

Active Area

Responsivity(nA Lux-1)

Dark Current(nA)

NEP(WHz-1/2)

Capacitance(pF)

ShuntResistance

(MΩ)**

Reverse Voltage

(DC) Spectral Curve

Temp.Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)

550 nmVR=0

Oper

atin

g

Sto

rage

min. typ. max. typ. typ. Vr=0Vmax.

Vr=12Vmax. min. typ. max.

OSD-E SeriesOSD1-E 1 1.0 x 1.0 1 2.2 1 0.2 1.5 x 10-14 35 7 250 1000

15

1

-25

~ +

85

-40

~ +

120

7 / TO-18

OSD3-E 3 2.5 x 1.2 3 6.6 2 0.5 1.8 x 10-14 80 20 100 700 1 7 / TO-18

OSD5-E 5 2.5 φ 5 11 2 0.5 1.9 x 10-14 130 35 100 600 1 5 / TO-5

OSD15-E 15 3.8 x 3.8 15 33 10 2 5.2 x 10-14 390 80 50 80 1 5 / TO-5

OSD60-E 100 11.3 φ 30 56 30 8 1.2 x 10-13 2500 520 2 10 2 69 / TO-8

Characteristicsmeasuredat22ºC(±2)andareversebiasof12voltsunlessotherwisestated.**ShuntResistancemeasuredat+/-10mV.¶Formechanicaldrawingspleaserefertopages61thru73.

Unit Conversion Table for IlluminanceThe Series E photodiodes have been color corrected to provide

a phototopic eye response. These devices can be used as low

illuminancemonitors,i.e.visiblelightmeasurementinstrumentsand

adjustingbrightnessofvisibledisplay.

100

90

80

70

60

50

40

30

20

10

0

CIE Curve vs. E Type Parts

Rel

ativ

e R

esp

ons

e (%

)

Wavelength (nm)

CURVE #1

CURVE #2

CIE CURVE

2

1

CIE

350 450 550 650 750 850 950*Totalirradiance(measuredvalue)bytheCIEstandardlightsource“A”.

FEATURES •HumanEyeResponse •TOCanPackages

APPLICATIONS •Photometry/Radiometry •MedicalInstrumentation •AnalyticalChemistry

CIE Curve vs. E Type Parts

38

Dual Sandwich Detector SeriesTwo Color Photodiodes

FEATURES •Compact •HermeticallySealed •LowNoise •WideWavelengthRange •RemoteMeasurements •w/TEC

APPLICATIONS •FlameTemperaturesensing •Spectrophotometer •Dual-wavelengthdetection •IRThermometersforHeat Treating,inductionheating, andothermetalparts processing

Dual Sandwich Detectors or Two Color Detectors are mostly employed forremote temperaturemeasurements. The temperature ismeasuredby taking theratio of radiation intensities of two adjacent wavelengths and comparing themwiththestandardblackbodyradiationcurves.Theadvantagesofopticalremotemeasurement have definitely made these devices the perfect match for thistype of measurements. They are independent of emissivity and unaffected bycontaminantsinthefieldofviewormovingtargets.Inaddition,measurementsoftargetsoutof thedirect lineofsightandtheability tofunctionfromoutsideRF/EMI interferenceor vacuumareas are possible. They also have the advantagesofovercomingobstructedtargetviews,blockages fromsight tubes,channelsorscreens, atmospheric smoke, steam, or dust, dirty windows as well as targetssmallerthanfieldofviewand/ormovingwithinthefieldofview.Thesedetectorscan also be used in applications where wide wavelength range of detection isneeded.

OSIOptoelectronicsoffers three typesofdual sandwichdetectors.TheSilicon-Siliconsandwich, inwhichonesiliconphotodiode isplacedontopof theother,with the photons of shorter wavelengths absorbed in the top silicon and thephotons of longer wavelengths penetrating deeper, absorbed by the bottomphotodiode. For applications requiring awider rangeofwavelengthbeyond1.1µm,an InGaAsphotodiodereplacesthebottomphotodiode.TheSilicon-InGaAsversionisalsoavailablewithatwostagethermo-electriccoolerformoreaccuratemeasurementsbystabilizingthetemperatureoftheInGaAsdetector.

Alldevicesaredesignedforphotovoltaicoperation (nobias),however, theymaybebiasedifneeded,tothemaximumreversevoltagespecified.Theyareidealforcouplingtoanoperationalamplifierinthecurrentmode.Forfurtherdetailsrefertothe“PhotodiodeCharacteristics”sectionofthiscatalog.




Dual Sandwich Detector SeriesTypical Electro-Optical Specifications at TA=23ºC

§@870nm‡Thermo-ElectricCoolerandThermistorSpecificationsarespecifiedinthetablesbelow.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.

Mod

el N

um

ber

Det

ecto

r El

emen

tActiveArea

SpectralRange(nm)

Pea

kW

avel

ength

Res

pon

sivi

ty

Cap

acit

ance

ShuntResistance

NEPD*

@ peak

Rev

erse

Vol

tage Rise

Time(μs)

Temp*Range(°C)

Pac

kage

Sty

le

Dim

ensi

on (

mm

)

nm

λp 0 V-10 mV

0V, λp 0V, λp

V 0 V50 ΩλP

Oper

atin

g

Sto

rage

A / W pF MΩ (W/√Hz) (cm√Hz/W)

typ. typ. typ. min. typ. typ. typ. max. typ.

Non-Cooled

PIN-DSSSi (top)

2.54 φ400-1100 950 0.45

70 50 5001.3 e -14 1.7 e +13

510

-40

~ +

100

-55

~ +

125

17 /TO-5

Si 950-1100 1060 0.12 4.8 e -14 4.7 e +12 150

PIN-DSInSi (top) 2.54 φ 400-1100 950 0.55 § 450 150 1.9 e -14 § 1.2 e +13 § 5 4

InGaAs 1.50 φ 1000-1800 1300 0.60 300 1.0 2.1 e -13 8.4 e +11 2 4

Two Stage Thermoelectrically Cooled ‡

PIN-DSIn-TECSi (top) 2.54 φ 400-1100 950 0.55 § 450 150 1.9 e -14 § 1.2 e +13 § 5 4

-40

~ +

100

-55

~ +

125

24 /TO-8

InGaAs 1.50 φ 1000-1800 1300 0.60 300 1.0 2.1 e -13 8.4 e +11 2 4

Thermistor Specifications

Two Stage Thermo-electric Specifications

PARAMETER CONDITION SPECIFICATION

Temperature Range --- -100 ºC to +100 ºC

Nominal Resistance --- 1.25 KΩ @ 25 ºC

Accuracy

-100 ºC to -25 ºC ± 6.5 ºC

-25 ºC to +50 ºC ± 3.5 ºC

@ 25 ºC ± 1.5 ºC

+50 ºC to +100 ºC ± 6.7 ºC

PARAMETER SYMBOL CONDITION SPECIFICATION

Maximum Achievable Temperature Difference ΔTMAX (°C)I = IMAXQC = 0

Vaccum 91

Dry 83

Maximum Amount Of Heat Absorbed At The Cold Face QMAX(W) I = IMAX, Δ T= 0 0.92

Input current In Greatest ΔTMAX IMAX (A) --- 1.4

Voltage At ΔTMAXVMAX (V) --- 2.0

40

Multi-Element Array SeriesPlanar Diffused Silicon Photodiodes

FEATURES •CommonSubstrateArray •UltraLowCrossTalk •UVEnhanced(A5V-35UV) •LowDarkCurrent •LowCapacitance •Solderable

APPLICATIONS •LevelMeters •OpticalSpectroscopy •MedicalEquipment •HighSpeedPhotometry •ComputedTomographyScanners •PositionSensors

Typical Shunt Resistance vs. Temperature

Multichannel array photodetectors consist of a number of single element photodiodes

laidadjacenttoeachotherformingaone-dimensionalsensingareaonacommoncathode

substrate.Theycanperformsimultaneousmeasurementsofamovingbeamorbeamsof

manywavelengths.Theyfeaturelowelectricalcrosstalkandsuperhighuniformitybetween

adjacent elements allowing very high precision measurements. Arrays offer a low cost

alternativewhenalargenumberofdetectorsarerequired.Thedetectorsareoptimizedfor

eitherUV,visibleornearIRrange.

They can be either operated in photoconductive mode (reverse biased) to decrease the

response time, or in photovoltaicmode (unbiased) for low drift applications. A2V-16 can

becoupled toanyscintillatorcrystal formeasuringhigh-energyphotons in theX-rayand

gammaray regionofelectromagneticspectrum. Inaddition, theyhavebeenmechanically

designed,sothatseveralofthemcanbemountedendtoendtoeachotherinapplications

wheremorethan16elementsareneeded.


Typical Capacitance vs. Reverse Bias Voltage

Figure11inthe“PhotodiodeCharacteristics”sectionofthiscatalogprovidesadetailed

circuitexampleforthearrays.


Multi-Element Array SeriesTypical Electro-Optical Specifications at TA=23ºC

Thechipsareequippedwith2"longbaretinnedleadssolderedtoallanodesandthecommoncathode.‘V’suffixindicatesthedeviceisoptimizedfor‘photovoltaic’operation.‘C’suffixindicatesthedeviceisoptimizedfor‘photoconductive’operation.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.** λ =254nm

Mod

el N

um

ber

Num

ber

of

Elem

ents Active Area

Per Element

Pit

ch (

mm

)

Responsivity(A/W)

Shunt Resistance

(MΩ)

Dark Current

(nA)

Capacitance(pF)

NEP(W / √Hz)

Temp.Range*(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

) 970nm -10 mV -10 V 0 V -10 V 0 V970nm

-10 V970nm

Oper

atin

g

Sto

rage

typ. typ. typ. typ. min. typ.

Photoconductive ArraysA5C-35 35

3.9 4.39 x 0.89 0.99 0.65 --- 0.05 --- 12 --- 6.2 e-15

-30

~ +

85

-40

~ +

125

54 / 40 pin DIPA5C-38 38

Photovoltaic ArraysA2V-16 16 1.92 1.57 x 1.22 1.59 0.60 1000 --- 170 --- 4.8 e-15 --- 53 / PCB

A5V-35 353.9 4.39 x 0.89 0.99 0.60 1000 --- 340 --- 4.8 e-15 --- 54 / 40 pin DIP

A5V-38 38

A2V-76 76 1.8 6.45 x 0.28 0.31 0.50 500 --- 160 --- 8.2 e-15 --- 52 / Ceramic

UV Enhanced Array (All Specifications @ λ =254 nm, VBIAS= -10V)A5V-35UV 35 3.9 4.39 x 0.89 0.99 0.06** 500 --- 340 --- 6.8 e-14 --- 54 / 40 pin DIP

42

2

MΩ

2

Solderable Chip SeriesPlanar Diffused Silicon Photodiodes

FEATURES •LargeActiveAreas •VariousSizes •HighShuntResistance •WithorWithoutLeads

APPLICATIONS •SolarCells •LowCostLightMonitoring •DiodeLaserMonitoring •LowCapacitance

The Solderable photodiode chip seriesofferalowcostapproachtoapplicationsrequiringlargeactiveareaphotodetectorswithorwithoutflyingleadsforeaseof

assembly and / or situations where the detector is considered “disposable”.

They have low capacitance, moderate dark currents, wide dynamic ranges

andhighopen circuit voltages. Thesedetectors are availablewith two3” long

leads soldered to the front (anode) and back (cathode). There are two types

of photodiode chips available. “Photoconductive” series, (SXXCL) for low

capacitanceand fast responseand“Photovoltaic”series (SXXVL) for lownoise

applications.

All of the devices are also available in chip form without any leads. For ordering subtract suffix ‘L’ from the model number, e.g. S-100C.

For large signal outputs, the detectors can be connected directly to a current

meteroracrossaresistorforvoltagemeasurements.Alternately,theoutputcan

bemeasureddirectlywithanoscilloscopeorwithanamplifier.Pleaserefertothe

“PhotodiodeCharacteristics”sectionforfurtherdetails.

2

MΩ

22

MΩ

22

MΩ

2

Typical Spectral Response Typical Dark Current per Unit Area vs. Bias Voltage

Typical Shunt Resistance vs. Temperature Typical Capacitance per Unit Area vs. Bias Voltage


Solderable Chip SeriesTypical Electro-Optical Specifications at TA=23ºC

§Alloftheabovebarechipsareprovidedwithtwo3"long29-30AWGinsulatedcolorcodedleadsattachedtothefrontforanode(RED)andtothebackforCathode(BLACK).Theyarealsoavailableinchipformonly(Leadless).ForOrderingsubtractSuffix‘L’fromtheModelNumber,i.e.S-100C.

All chip dimensions in inches.

Active Area

Chip size mm

(inches)

Peak ResponsivityWavelength

Responsivityat λp

ShuntResistance

(MΩ)

DarkCurrent

(nA)

Capacitance(pF)

Area mm2

(inches2)

Dimensions mm

(inches)

λp(nm) A/W -10 mV -5 V 0 V -5 V

typ. min. typ. min. max. typ. typ.Mod

el N

um

ber

S-4CL § 4.7(0.007)

1.7 x 2.8(0.07 x 0.11)

1.9 x 4.1(0.08 x 0.16)

970 0.60 0.65

--- 20 --- 15

S-4VL 10 --- 370 ---

S-10CL 9.6(0.015)

2.3 x 4.2(0.09 x 0.17)

2.5 x 5.1(0.10 x 0.20)

--- 40 --- 30

S-10VL 8 --- 750 ---

S-25CL 25.8(0.04)

5.1 x 5.1(0.20 x 0.20)

5.5 x 6.0(0.22 x 0.24)

--- 100 --- 95

S-25VL 5 --- 2100 ---

S-25CRL 25.4(0.039)

2.5 x 10.1(0.10 x 0.40)

3.4 x 10.5(0.13 x 0.41)

--- 100 --- 95

S-25VRL 5 --- 2100 ---

S-50CL 51.0(0.079)

2.5 x 20.3(0.10 x 0.80)

3.4 x 20.6(0.13 x 0.81)

--- 300 --- 200

S-50VL 3 --- 4000 ---

S-80CL 82.6(0.128)

4.1 x 20.1(0.16 x 0.79)

5.2 x 20.4(0.21 x 0.80)

--- 500 --- 300

S-80VL 2 --- 6000 ---

S-100CL 93.4(0.145)

9.7 x 9.7(0.38 x 0.38)

10.5 x 11.00(0.42 x 0.43)

--- 600 --- 375

S-100VL 1.0 --- 8500 ---

S-120CL 105.7(0.164)

4.5 x 23.5(0.18 x 0.93)

5.5 x 23.9(0.22 x 0.94)

--- 800 --- 450

S-120VL 0.5 --- 10000 ---

S-200CL 189.0(0.293)

9.2 x 20.7(0.36 x 0.81)

10.2 x 21.0(0.40 x 0.83)

--- 1200 --- 750

S-200VL 0.2 --- 17000 ---

44

BI-SMTBack-Illuminated Silicon Photodiodes

TheBI-SMTproductseriesaresinglechannelback-illuminatedsiliconphotodiodes

specificallydesigned tominimize ‘dead’ areasat theedgeof thedevice.Each

deviceisdesignedonapackagewithdimensionsverysimilartothechipitself.

Thisdesignallowsformultipledetectorstobearrangedinatiledformatandoffers

easeofcouplingtoascintillator.

FEATURES •ChipSizePackage •EaseofcouplingtoScintillator •PatternedElectrodes

APPLICATIONS •X-RayInspection •ComputedTomography •GeneralIndustrialUse

Mod

el N

um

ber

Active Area

Pea

k

Res

pon

sivi

ty

Wav

elen

gth

Responsivityat

540nm

Responsivityat

920nm

Capacitance(pF)

DarkCurrent

(nA)

ShuntResistance

(MΩ)ReverseVoltage

(V)

RiseTime(µs)

Temp*Range(°C)

Pac

kage

Sty

le ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)

λp(nm) (A/W) (A/W) 0 V

1 KHz-10 mV -10mV

0V, 1 KOhm, 650nm

Oper

atin

g

Sto

rage

typ. min. typ. min. typ. typ. typ. max. typ. max. typ.

33BI-SMT 5.76 2.4 x 2.4

920 0.30 0.35 0.53 0.59

50 .02 .5 500

10

10

-20

~+

60

-20

~+

80 SMT55BI-SMT 19.36 4.4 x 4.4 200 .04 2 250 20

1010BI-SMT 88.36 9.4 x 9.4 900 .16 10 1 20

Rel

ativ

e S

ensi

tivity

(%)

Position on Photosensitive Area (um)

0 1000 2000 3000

100.0

80.0

60.0

40.0

20.0

00

Typical Spectral Response (TA=25ºC) Typ. Sensitivity Uniformity (TA=25ºC, λ=650nm, Vr=OV, 50µm Spot)

Rel

ativ

e S

ensi

tivity

(%)

Position on Photosensitive Area (um)

0 1000 2000 3000

100.0

80.0

60.0

40.0

20.0

00


BI-SMTBack-Illuminated Silicon Photodiodes

Dimensions (inches)

Model Number A B C D E F

33BI-SMT 0.118 0.11 0.031 0.02 0.043 0.024

55BI-SMT 0.197 0.189 0.051 0.039 0.0825 0.024

1010BI-SMT 0.394 0.386 0.051 0.039 0.163 0.059

0.004” 0.005”

Pad Assignments:Cathode: 1, 3, 5, 7

Anode: 2, 4, 6, 8

BI-SMT Mechanical Specifications

0.004” 0.005”

46

Avalanche PhotodiodesUltra High Gain Silicon Photodetectors

FEATURES •HighResponsivity •HighBandwidth/FastResponse •LowNoise •LowBiasVoltage •HermeticallySealedTO-Packages

APPLICATIONS •HighSpeedOpticalCommunications •LaserRangeFinder •BarCodeReaders •OpticalRemoteControl •MedicalEquipment •HighSpeedPhotometry

SiliconAvalanchePhotodiodesmakeuseofinternalmultiplicationtoachieve

gain due to impact ionization. The result is the optimized series of high

Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics

offersseveral sizesofdetectors thatareavailablewith flatwindowsorball

lensesforopticalfiberapplications.

*1:Areainwhichatypicalgaincanbeobtained.

Product Model

Active Area Responsivity

@Gain M λ = 800 nm

(A/W)

DarkCurrent

Gain M

(nA)

Ct

Gain M

(pF)

Q.E.

M = 1 λ = 800

nm

(%)

BreakdownVoltage

100µA

(V)

TemperatureCoefficient

ofBreakdown

Voltage

(V/°C)

Bandwidth

-3dBGain Mλ = 800

nm(MHz)

Excess Noise Figure

Gain Mλ = 800

nm

GainM

λ = 800 nm

Sto

rage

Tem

per

ature

(°C

)

Oper

atin

gTe

mper

ature

(°C

)

Pac

kage

Sty

le *

2

Dia

met

er*1

(m

m)

Are

a (m

m2)

Typ Max Typ Max

APD02-8-150-T52 0.2 0.03

50

0.05 1 1.5 75 150 250 0.45 1000 0.3 100

-55

~ +

125

-40

~ +

100

65 / TO-52 or 66 / TO-52L

APD05-8-150-T52 0.5 0.19 0.1 1 3 75 150 250 0.45 900 0.3 10065 / TO-52 or 66 / TO-52L

APD10-8-150-T52 1.0 0.78 0.2 2 6 75 150 250 0.45 600 0.3 10065 / TO-52 or 66 / TO-52L

APD15-8-150-TO5 1.5 1.77 0.5 5 10 75 150 250 0.45 350 0.3 100 67 / TO-5

APD30-8-150-TO5 3.0 7.0 30 1 10 40 75 150 250 0.45 65 0.3 60 67 / TO-5

APD50-8-150-TO8 5.0 19.6 20 3 30 105 75 150 250 0.45 25 0.3 40 3 / TO-8

Electro-Optical Characteristics (TA = 23° C, typical values at gain listed, unless otherwise specified)

*2:PleaserefertotheSiliconAPDbrochureformoredetailedinformation.Capwithmicro-lensisavailableforsmallactiveareasize.

60

50

40

30

20

10

0

Wavelength (nm)400 500 600 700 800 900 1000 1100

Res

pons

ivity

(A/W

)


Res

po

nsi

tivi

ty (

A/W

)

Wavelength (nm)

Typ. Spectral Response (TA= 23˚C, M = 100)

Typ. Gain vs. Reverse Bias (TA= 23˚C, 800 nm)

Reverse Bias Voltage (V)

Gai

n

APD Series 8-150Silicon Avalanche Photodiodes, 800nm band

Typ. Capacitance vs. Reverse Bias (TA= 23˚C, f=1MHz)

Cap

acit

ance

(p

F)


APD50-8-150

APD30-8-150

APD15-8-150

APD10-8-150

APD05-8-150

APD02-8-150

Typ. Dark Current vs. Reverse Bias (TA= 23˚C)

APD50-8-150APD30-8-150

APD15-8-150

APD10-8-150

Dar

k C

urr

ent

(pA

)


APD05-8-150 APD02-8-150

100%

80%

60%

40%

20%

0%

Res

pons

ivity

(A/w

)

Wavelength (nm)400 500 600 700 800 900 1000 1100

Typ. Quantum Efficiency vs. Wavelength (TA= 23˚C)

Qu

antu

m E

ffici

ency

Wavelength (nm)

48

Segmented Photodiodes (SPOT Series)Position Sensing Detector (PSD)

FEATURES •HighAccuracy •ExcellentResolution •High-SpeedResponse •UltraLowDarkCurrent •ExcellentResponseMatch •HighStabilityoverTimeandTemperature

APPLICATIONS •MachineToolAlignment •PositionMeasuring •BeamCentering •SurfaceProfiling •Targeting •GuidanceSystems

The SPOT Series are common substrate photodetectors segmented into either two

(2)orfour(4)separateactiveareas.Theyareavailablewitheithera0.005”or0.0004”

welldefinedgapbetweentheadjacentelements resulting inhighresponseuniformity

betweentheelements.TheSPOTseriesareidealforveryaccuratenullingorcentering

applications.Positioninformationcanbeobtainedwhenthelightspotdiameterislarger

thanthespacingbetweenthecells.

Spectral response range is from 350-1100nm. Notch or bandpass filters can be added to achieve specific spectral responses.

These detectors exhibit excellent stability over time and temperature, fast response

timesnecessary forhighspeedorpulseoperation,andposition resolutionsofbetter

than 0.1 µm. Maximum recommended power density is 10 mW / cm2 and typical

uniformityofresponsefora1mmdiameterspotis±2%.

The circuit on the opposite page represents a typical biasing and detection circuit set up for both bi-cells and quad-cells. For position calculations and further details, refer to “Photodiode Characteristics”

section of the catalog.

Typical Spectral Response Typical Cross-Over Characteristics

Typical Capacitance vs. Reverse Bias Voltage Typical Dark Current vs. Reverse Bias

Segmented Photodiodes (SPOT Series)Typical Electro-Optical Specifications at TA=23ºC


‡OverallDiameter(AllfourQuads)¶Formechanicaldrawingspleaserefertopages61thru73.Chipcenteringwithin±0.010".

Mod

el N

um

ber

Active AreaPer Element

Elem

ent

Gap

(m

m) Responsivity

(A/W)Capacitance

(pF)Dark Current

(nA)NEP

(W/Hz) ReverseVoltage

(V)

RiseTime(ns)

TempRange(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

) 970 nm -10 V -10 V -10 V970 nm

-10 V780 nm

50 Ω

Oper

atin

g

Sto

rage

min. typ. typ. typ. max. typ. max. typ.

Two-Element Series, Metal Package

CD-25T 2.3 4.6 x 0.5 0.2

0.60 0.65

50@ -15V 20@ -15V1.1 e-14

30

18

-40

~ +

100

-55

~ +

125 2 / TO-5

SPOT-2D 3.3 1.3 x 2.5 0.127 11 0.15 2.0 22 41 / TO-5

SPOT-2DMI 0.7 0.6 x 1.2 0.013 3 0.05 1.0 6.2 e-15 11 40 / TO-18

SPOT-3D 2.8 0.6 x 4.6 0.025 7 0.13 2.0 9.9 e-15 25 41 / TO-5

Four Element Series, Metal Package

SPOT-4D 1.61 1.3 sq 0.127

0.60 0.65

5 0.10 1.0 8.7 e-15

30

22

-40

~ +

100

-55

~ +

125 41 / TO-5

SPOT-4DMI 0.25 0.5 sq 0.013 1 0.01 0.5 2.8 e-15 9

SPOT-9D 19.610 φ ‡

0.10260 0.50 10.0 1.9 e-14

3343 / LoProf

SPOT-9DMI 19.6 0.010 28

50

Duo-Lateral, Super Linear PSD’sPosition Sensing Detectors (PSD)

FEATURES •SuperLinear •UltraHighAccuracy •WideDynamicRange •HighReliability •DuoLateralStructure

APPLICATIONS •BeamAlignment •PositionSensing •AngleMeasurement •SurfaceProfiling •HeightMeasurements •Targeting •GuidanceSystem •MotionAnalysis

TheSuper Linear Position Sensorsfeaturestateoftheartduo-lateraltechnologyto provide a continuous analog output proportional to the displacement of the

centroidofalightspotfromthecenter,ontheactivearea.Ascontinuousposition

sensors,thesedetectorsareunparalleled;offeringpositionaccuraciesof99%over

64%ofthesensingarea.Theseaccuraciesareachievedbyduo-lateraltechnology,

manufacturing the detectors with two separate resistive layer, one located on

thetopandtheotheratthebottomofthechip.Oneortwodimensionalposition

measurements can be obtained using these sensors. A reverse bias should be

appliedtothesedetectorstoachieveoptimumcurrentlinearityathighlightlevels.

ThemaximumrecommendedpowerdensityincidentontheduolateralPSDsare1

mW/cm2 .Foroptimumperformance, incidentbeamshouldbeperpendicularto

theactiveareawithspotsizelessthan1mmindiameter.

For position calculations and further details on circuit set up, refer to the “Photodiode Characteristics” section of the catalog.

Typical Spectral Response Typical Position Detectability



Duo-Lateral Super Linear PSD’sTypical Electro-Optical Specifications at TA=23ºC

†Thepositiontemperaturedriftspecificationsareforthediemountedonacopperplatewithoutawindowandthebeamattheelectricalcenterofthesensingarea.§TheDLSSeriesarepackagedwithA/RcoatedwindowsandhavealowerdarkcurrentthantheDLseries.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.

NOTES:1.DL(S)seriesareavailablewithremovablewindows.2.Chipcenteringwithin±0.010".


Mod

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PositionSensing Area

Responsivity(A/W)

Position Detection

Error(µm)

Dark Current(nA)

Capacitance(pF)

RiseTime(µs) Position

Detection Drift †

(µm / °C)

Inter-electrode

Resistance (kΩ)

TempRange(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

on

(mm

) 670 nm

Over 80% of Length 64% of Sensing

Area

-15 V, SL Series-5 V, DL Series

-15 V, SL Series-5 V, DL Series

670 nm50 Ω

Oper

atin

g

Sto

rage

min. typ. typ. typ. max. typ. max. typ. typ. min. max.

One-Dimensional Series, Metal Package (VBIAS=-15V)

SL3-1 3 3 x 10.3 0.4

3 5 50 3 7 0.04 0.06 15 80

-10

~

+60

-20

~

+80

41 / TO-5

SL5-1 5 5 x 1 5 10 100 5 9 0.10 0.10 20 100 42 / TO-8

One-Dimensional Series, Ceramic Package (VBIAS=-15V)

SL3-2 3 3 x 1

0.3 0.4

3 5 50 3 7 0.04 0.06 15 80

-10

~ +

60

-20

~ +

80

48 / 8-pin DIP

SL5-2 5 5 x 1 5 10 100 5 9 0.10 0.10 20 100

SL15 15 15 x 1 15 150 300 15 25 0.60 0.1 60 300 49 / 24-pin DIP

SL30 120 30 x 4 30 150 1000 125 150 1.0 0.6 40 80 51 / Ceramic

SL76-1 190 76 x 2.5 76 100 1000 190 250 14.0 1.4 120 600 50 / Special

Two-Dimensional Series, Metal Package § (VBIAS=-5V)

DL-2 «

4 2 sq

0.3 0.4

30

30 600 10 30

0.025

0.20

5 25

-10

~ +

60

-20

~ +

80

37 / TO-8DLS-2 «

10 175 8 14 0.40DLS-2S « 14 / TO-5

DL-416 4 sq 50

50 1000 35 600.08

0.2537 / TO-8

DLS-4 25 300 30 40 0.30

DL-10 100 10 sq 100 500 5000 175 375 0.20 0.60 34 / Special

DL-20 400 20 sq 200 2000 12000 600 1500 1.00 1.0 35 / Special

Two-Dimensional Series, Ceramic Package § (VBIAS=-5V)

DLS-10 100 10 sq0.3 0.4

100 50 400 160 200 0.20 0.705 25

-10

~

+60

-20

~

+80 36 / Ceramic

DLS-20 400 20 sq 200 100 1000 580 725 1.00 1.2

Two-Dimensional Series, Low-Cost Ceramic Package (VBIAS=-5V)

DL-10C 100 10 sq0.3 0.4

100 500 5000 175 375 0.20 0.605 25

-10

~

+60

-20

~

+80

38 / Ceramic

DL-20C 400 20 sq 200 2000 12000 600 1500 1.00 1.0 39 / Ceramic

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

52

Tetra-Lateral PSD’sPosition Sensing Detectors (PSD)

FEATURES •SingleResistivityLayer •HighSpeedResponse •HighDynamicRange •VeryHighResolution •SpotSize&ShapeIndependence

APPLICATIONS •ToolAlignmentandControl •LevelingMeasurements •AngularMeasurements •3DimensionalVision •PositionMeasuring

Tetra-lateral position sensing detectors aremanufactured with one single resistive layer

for both one and two dimensional measurements. They feature a common anode and

twocathodesforonedimensionalpositionsensingor fourcathodesfor twodimensional

positionsensing.

These detectors are best when used in applications that require measurement over a wide spacial range. They offer high response uniformity, low dark current, and good position linearity over 64% of the sensing area.

Areversebiasshouldbeappliedto thesedetectors toachieveoptimumcurrent linearity

whenlargelightsignalsarepresent.Thecircuitontheoppositepagerepresentsatypical

circuitsetupfortwodimensionaltetra-lateralPSDs.Forfurtherdetailsaswellasthesetup

foronedimensionalPSDsrefertothe“PhotodiodeCharacteristics”sectionofthecatalog.

Notethatthemaximumrecommendedincidentpowerdensityis10mW/cm2.Furthermore,

typicaluniformityofresponsefora1mmspotsizeis±5%forSC-25DandSC-50Dand

±2%forallothertetra-lateraldevices.

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

Typical Position Dectectability Typical Spectral Response



LSC-5D « 11.5 5.3 x 2.20.35 0.42

0.040 0.01 0.10 50 0.25 2 50

-10

~+

60

-20

~+

70

47 / Plastic

LSC-30D « 122 30 x 4.1 0.240 0.025 0.250 300 3.00 4 100 46 / Plastic

Tetra-Lateral Position SensorsTypical Electro-Optical Specifications at TA=23ºC

†Risetimespecificationsarewitha1mmφspotsizeatthecenterofthedevice.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.

Chipcenteringwithin±0.010".


For further details, refer to the “Photodiode Characteristics” section of the catalog.

Mod

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Position Sensing Area

Responsivity(A/W)

AbsolutePosition Detection

Error(mm)

Dark Current(µA)

Capacitance(pF)

RiseTime †(µs) Inter-

electrodeResistance

(kΩ)

TempRange(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)670 nm

Over80% of Length64% of Area

-15 V -15 V-15 V

670 nm50Ω

Oper

atin

g

Sto

rage

min. typ. typ. typ. max. typ. typ. min. max.

One-Dimensional Series, Plastic Package

Two-Dimensional Series, Metal PackageSC-4D 6.45 2.54 sq

0.35 0.42

0.080 0.005 0.050 20 0.66

3 30

0 ~

+ 7

0

-20

~ +

80

41 / TO-5

SC-10D 103 10.16 sq 1.30 0.025 0.250 300 1.00 44 / Special

SC-25D 350 18.80 sq 2.5 0.10 1.0 1625 5.00 45 / Special

SC-50D 957 30.94 2q 5.0 0.25 2.5 3900 5.00 21 / Special

5454

Sum and Difference Amplifier ModulesPosition Sensing Modules

FEATURES •OtherQD7-XXorQD50-XXareavailableuponrequest

INPUTPower supply voltage Vcc = ±4.5V min; ±15V typical; ±18V max

Photodiode bias voltage = (.91) x (VPDBIAS)

VPDBIAS = 0 TO +Vcc; Absolute maximum VPDBIAS is +Vcc

NOTE: Negative voltages applied to PDBIAS will render theQD7-0-SD or QD50-0-SD inoperative.

MAXIMUM OUTPUT VOLTAGEPositive: (+Vcc - 3V)

Negative: (- Vcc + 3V)

ENVIRONMENTALOperating temperature 0 to 70° C

Theoretical noise 15 nV/Hz½

Frequency response (-3dB): 120kHz @ VPDBIAS=0V;880nm 250kHz @ VPDBIAS=15V;880nm

Max slew rate 10V/µs

Output current limit 25 mA

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Active AreaTotal

Elem

ent

Gap

(m

m) Responsivity

(A/W)Capacitance

(pF)Dark Current

(nA)

NEP(W/Hz) Reverse

Voltage(V)

RiseTime(ns)

TempRange(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

) 900 nm 0 V 0 V900 nm

-30 V900 nm

50 Ω

Oper

atin

g

Sto

rage

min. typ. typ. typ. max. typ. max. typ.

‘O’ SeriesQD7-0 7 3.0 φ

0.2 0.47 0.5420 4.0 15.0 9.0 e-14

30 10

-40

~

+10

0

-55

~

+12

5 41 / TO-5

QD50-0 50 8.0 φ 125 15.0 30.0 1.3 e-13 70 / TO-8

APPLICATIONS •PositionMeasuring •BeamCentering •Targeting •GuidanceSystems

Values given as per element unless otherwise stated

QD7-0-SD or QD50-0-SD arequadrantphotodiodearrayswith associ-atedcircuitrytoprovidetwodifferencesignalsandasumsignal.Thetwo

differencesignalsarevoltageanalogsoftherelativeintensitydifferenceof

thelightsensedbyopposingpairsofthephotodiodequadrantelements.

Inadditiontheamplifiedsumofall4quadrantelementsisprovidedasthe

sumsignal.ThismakestheQD7-0-SDorQD50-0-SDidealforbothlight

beamnullingandpositionapplications.Verypreciselightbeamalignments

arepossible,andthecircuitcanalsobeusedfor targetacquisitionand

alignment.

OUTPUTWhere ix is the current from quadrant x

VT-B = -(i1 +i2) - (i3 + i4) x (104)

VL-R = -(i2 +i3) - (i1 + i4) x (104)

VSUM = -(i1 + i2 + i3 + i4) x (104)

55World Class Products - Light Sensing Solutions 55

4X4D4x4 Silicon Array Detectors

•Non-condensingtemperatureandstoragerange,Non-condensingenvironment.•AllElectro-Opticalspecificationsaregivenonaperelementbasis.•UDT-4X4D:NEPtestedat810nm*

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Active Area

Pea

k

Res

pon

sivi

tyW

avel

ength

Responsivity(A/W)

Capacitance(pF)

ShuntResistance

(MΩ)

NEP(W/√Hz) Crosstalk

Temp.Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)

λpnm 632nm 0 V -10 mV

0 V632nm 0 V

632nm

Oper

atin

g

Sto

rage0 V

810nm*

typ. min. typ. typ. min typ. typ. typ.

4 x 4 Array Detectors

PIN-4X4D 1.96 1.4 x 1.4 850 --- 0.35 75 50 0.01 5.2e-14 1 -20 ~

+60 -20 ~

+80 Ceramic LCC

UDT-4X4D* 1.0 1.0 x 1.0 810 0.35 0.40 35 1.0 0.01 1.0e-14* 0.02% -20 ~

+60 -20 ~

+80 Ceramic LCC

FEATURES •SpeedyResponse •ExtremelyLowCross-talk •SurfaceMountDesign

APPLICATIONS •ScatteringMeasurements •PositionSensing

ThePIN-4X4D isa4by4arrayofsuperblueenhancedPhotodetectors.Ourproprietarydesignprovidesvirtuallycompleteisolationbetweenallof

the16elements.ThestandardLCCpackageallowseasyintegrationinto

your surface mount applications. Numerous applications include Ratio

andScatteringmeasurements,aswellasPositionSensing.Forcustom

packages, special electro-optic requirements,or toorder theseparts in

dieform,pleasecontactourApplicationsgroup.

0. 60

0. 50

0. 40

0. 30

0. 20

0. 10

0. 00

200 300 400 500 600 700 800 900 1000 1100


PIN-4X4D

UDT-4X4D

56

Topviewsareshownwithoutwindow

Allunitsininches.

PIN-4X4D

4x4 Silicon Array Detectors

Topviewsareshownwithoutwindow

Allunitsininches.

Mechanical Specifications

UDT-4X4D


Normalized LED Output vs. Angular Distribution

Dual Emitter / Matching Photodetector SeriesMolded Lead Frame and Leadless Ceramic Substrate

FEATURES •LeadlessceramicSubstrate •LeadFrameMoldedPackages •TwoandThreeLeadDesigns •Bi-WavelengthsLEDs •MatchingDetectorResponse

APPLICATIONS •SpO2

•Bloodanalysis •MedicalInstrumentation •RatiometricInstruments

Typical Spectral Response Typical Capacitance vs. Reverse Voltage

Normalized LED Output vs. Forward Current

TheDual LED series consists of a 660nm (red) LED and a companion

IRLED such as 880/ 895, 905, or 940nm. They are widely used for

radiometric measurements such as medical analytical and monitoring

devices. They can also be used in applications requiring a low cost

Bi-Wavelengthlightsource.Twotypesofpinconfigurationsareavailable:

1.) three leads with one common anode or cathode, or 2.) two leads

parallel back-to-back connection. They are available in two types of

packaging. Clear lead framemolded side looker, and leadless ceramic

substrate.

The matching Photodetector’ responses are optimized for maximum

responsivity at 66nmaswell as near IRwavelengths. They exhibit low

capacitance and low dark currents and are available in three different

activeareasizesinthesametwotypesofpackagingasthedualemitters:

Clearleadframemoldedsidelookerandleadlessceramicsubstrate.

58

*InBack-to-Backconfiguration,theLED’sareconnectedinparallel.«Minimumorderquantitiesapply

LED

PeakWavelength

RadiantFlux

SpectralBandwidth

ForwardVoltage

ReverseVoltage

nm nW nm V V

if=20mA if=20mA if=20mAFWHN

if=20mA if=20mA

typ. typ. typ. max. max.

Dual Emitter / Matching Photodetector SeriesMolded Lead Frame and Leadless Ceramic Substrate

Formechanicaldrawingsandpinlocations,pleaserefertopages61to77.«Minimumorderquantitiesapply

Formechanicaldrawings,pleaserefertopages61thru73.

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LED’s Used PackageStyle ¶ Pin Configuration

Operating Temperature

Storage Temperature

nm ˚C ˚C

Dual Emitter Combinations «DLED-660/880-LLS-2

660

880


2 Leads / Back to Back*

-25

~ +

85

-40

~ +

80

DLED-660/895-LLS-2 895

DLED-660/905-LLS-2 905

DLED-660/905-LLS-3 9053 Leads / Common Anode

DLED-660/940-LLS-3 940

DLED-660/880-CSL-2 880

63 / Side Looker Plastic

2 Leads / Back to Back*DLED-660/895-CSL-2 895

DLED-660/905-CSL-2 905

DLED-660/905-CSL-3 9053 Leads / Common Anode

DLED-660/940-CSL-3 940

Mod

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Active Area SpectralRange Responsivity Capaci-

tance

Dark Current

(nA)

Max.ReverseVoltage

OperatingTemp.

StorageTemp.

PackageA

rea

mm

2

Dim

ensi

ons

mm nm

A / W pF -10 V V

°C °C660nm 900nm -10 V typ. 10µA

Photodiode Characteristics «

PIN-0.81-LLS

0.81 1.02 φ

350 -1100 0.33 0.55

2.0 2

20

-25

~ +

85

-40

~ +

100C

62 /LeadlessCeramic

PIN-0.81-CSL 60 / Molded LeadFrame

PIN-4.0-LLS

3.9 2.31 x 1.68 10 5

62 /LeadlessCeramic


PIN-8.0-LLS

8.4 2.9 Sq. 25 10

62 /LeadlessCeramic


660nm 660 1.8 25 2.4

5

880nm 880 1.5 80 2.0

895nm 8952.0

50

1.7905nm 905

935nm 9351.5 1.5

940nm 940

LED Characteristics

Documents

Planar Diffused Silicon Photodiodes - SphereOptics · 2017. 8. 11. · 14 Photoconductive Series Typical Electro-Optical Specifications at TA=23ºC ‡ The ‘I’ suffix on the model