1

Toray Industries, Inc.

PW-series

Positive Tone Photosensitive Polyimide Coatings

Photoneece TM

2

PW-series introduction

Semiconductor Package Structure

Why is PI necessary forsemiconductors package?

Why is POSI PI the most adjustableto semiconductors process?

Why is PW-series the best solution ofyour problems?

Semiconductor Process

Solution examples

3

Semiconductor Package Structure1.TSOP or QFP

2.FBGA(stacked type)

3.Bare chip (Bump structure)

4.Wafer Level Package(WLP)

Polyimide

Mold compound

Lead flame

Polyimide

Mold compound

Solder bump

Gold bump

Gold Bump

Polyimide

Redistributedline(metal)

Polyimide

The reason why PI is necessary is---to protect filler attack---to increase packages reliability(buffer effectiveness)

The reason why PI is necessary is---to protect filler attack---to increase packages reliability(buffer effectiveness)

---to protect upper IC attack

The reason why PI is necessary is---to protect IC substrate(PI acts

like encapsulation)---to increase adhesion to ACF

The reason why PI is necessary is---to protect IC substrate(PI acts

like encapsulation---to increase adhesion to ACF---to distribute line

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Semiconductor Process

photoresist

passivationAlSi

Photoresist coating

Photoresist developing

Passivation dry-etching

Photoresist stripping

PI coating

Photoresist coating

Photoresist &PI developing

Photoresist stripping

PI curing

PI coating

PI developing

PI curing

Passivation dry-etching

exposure

exposure

exposure

Non-photosensitive PI photosensitive PI

POSI PSPI--alkaline solvent--high resolution

NEGA PSPI--organic solvent--low resolution

The most adjustable!

The number of processis fewer than non-PSPI.

exposure 2 times exposure 1 time

5

Solution examples

The features of PW-series

High chemical resistanceHigh adhesion strengthGood taper shape

Useful for Bump & WLP

Low residual stress Useful for 12 wafer

High resolution

Low price

Useful for advanced memory & logic(Advanced memory= fuse box size is about 5um,Advanced Logic= left pattern width is 7um)

Useful for every device using NEGA

Solution

Is there any problems about above matters with you?We can provide solutions by recommending PW-series.

The reason why PW-series is the most suitable for all applicationsis that PW-series has following features solving your problems.

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1. Marketing Data

7

Cost reduction of process and materialsRequirementsAvailability for aqueous development(TMAH 2.38%)Low temperature curing process/Good photo-speed Long storage lifeHigh resistance for dry etching process(1 mask process)

Customers Requirement Trends for PI

6inch 8inch 12inch

TSOP

QFP

PBGA STACKED BGA

FBGA

FCBGA

BARE CHIPBUMP IC

WLP

Wafer Size

Higher package reliabilityRequirementsHigh electric and thermal resistanceHigh adhesive strength

Semiconductor and package downsizingRequirementsHigher resolutionHigher adhesion to passivation layer

12inch wafer applicationRequirementsGood photo-speedLow residual stress and CTE

CSP(WLP) and bump applicationRequirementsExcellent chemical resistanceHigh adhesion to various materialsAvailability for multi layer(High Tg)

Package Density

TCP

4inch

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PIs Technical Trend

Non Photosensitive PI (negative tone)

Non Photosensitive PI (positive tone)

Photosensitive PI (negative tone)

Photosensitive PI (positive tone)

To stop hydrazine process

To be fine resolutionTo reduce process

But it has many problems such asneeds organic developmentneeds HMDS for increasing adhesionhas less film & liquid propertieshas out gas includedetc To reduce cost(process &

materials)To be high resolutionTo prevent deposit on side-wallTo lower out gasTo increase adhesion to MC and passivation layerTo be environmental friendly

Decreasing

Decreasing

Have vanished

1980 1990 2000

Solution of the problems Its becoming standard!

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Features of PW-series

High package reliabilityHigh electric and thermal resistanceHigh adhesion strength

Cost reduction of process and materialsAvailability for aqueous developmentLow temperature curing processGood photo speedLong storage lifeHigh resistance for dry etching process

Semiconductor and package downsizingHigh resolutionHigh adhesion strength to passivation layer

CSP and bump applicationExcellent chemical resistanceHigh adhesion strength to various materialsAvailability for multi layer

12 inch applicationGood photo speedLow residual stress and CTE

Customers requirement

Satisfying ICs requirement (Pure PI film)Excellent adhesion strength to MC and Si,SiN,TEOS etc.

Available for TMAH 2.38%Available for curing under 280The best photo speed in positive tone PSPIStable at room temperatureExcellent resistance for 1 mask process

The highest resolution(3um at 8um thickness)Excellent adhesive strength of even 5um line pattern to SiN

The highest chemical resistance in all PSPIExcellent adhesion strength to many metals(Cu,Al,Ni,Cr,Ti,Au,etc)High Tg and stability during curing process

The best photo speed in positivetone PSPIless than 40MPa and 36ppm/

PW-series is(has)

We can show you more detailed informationin the following Technical Data

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The best solution exampleIf you face following problems Then we can provide you with solutions such as

For non photosensitive customers:Poor viscous stability or solution stabilityLow resolution(around 30um)Numerous process

For negativetone photosensitive customers:Expensive material costLow resolution(about 10um)Deposit on side-wallOut gasWeak adhesion to MC and passivation layerOrganic development

For PBO customers:High CTE & residual stressLow chemical resistancePoor adhesion to passivaition layerLess storage stabilityNarrow cure process latitude

Excellent viscous stabilityFar higher resolution(3um)Photoresist process reduction

Moderate PI price and availability for aqueous developmentHigher resolution(3um)Far less out gas included and good taper shapeFar less out gas includedExcellent adhesion to that(not to need HMDS)Availability for aqueous development

The lowest CTE & residual stress in all PSPIExcellent chemical resistance(no crack during chemical process)Excellent adhesion to passivation layer(even if 5um line is OK)Excellent storage stability(no particle after R.T.storage)Wider cure process window(available for curing in air)

From PI customers view

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From IC manufacturers viewThe best solution example

For buffer coatings application

For CSP & bump application

(The present)A few padsFuse box 1020umTSOP

Fuse box

Pad

Left pattern

Pad

CSP & bump is very promising package.It can realize package shrinkage,improvement of electric properties, and cost reduction. Au bump

Redestribution routeUnder bump metal

PI layer

Si substrate

PI is/will be required for following things

Higher resolution(3-5um)

Higher chemical resistance for CSP & bump.

Higher adhesive strength to passivaiton layer.Higher chemical resistance for HF solution during wet etching before dry etching.

Higher adhesion strength to various metals.Higher chemical resistance for various etchant, flux, cleaner, solvent etc.

PW-series emphasize this field

(The future)A few padsFuse box 520umCSP

(The present)A lot of padsLeft pattern width 10umQFP

(The future)A lot of padsLeft pattern width 5umCSP

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DRAM

Flash

SRAM

MRAM

Logic(Graphic,LCDdriver,ChipSet,MPU,etc)

System LSI

TSOP

Bump ,WLP

Conventional propertiesElectric propertyThermal propertyAdhesion to MC & SIN

etc

Conventional propertiesProtective property forfiiler in MC

Low temperature curig

Higher Adhesion to SiNHigh chemical resistance(HF)

Conventional properties+Low temperature curingHigher Adhesion to SiNHigh chemical resistance

High chemical resistance(flux + cleaner,etchant,solvent)

Devicetrend

Packagetrend

From IC manufacturers viewThe best solution exampleHigher resolution

In the future, youll need requirement.PW-series is only PI which can satisfy these demands.

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PW-series basic properties

film property

PW-1000 PW-1200 PW-1500 PW-2100

Type Standard Thick Film High Chemical High Photo-Applicable Resistance Sensitivity

viscosity 1,500 1,500 1,500 1,500

total solid content 38 40 40 40-16 month 9 9 9 94 month 6 6 6 6

room temp. month 1 1 1 1th ickness 3-7 3-10 3-7 3-7

tensile strength 130 150 150 150250 cure % - 20 20 20320 cure % 30 20 20 20350 cure % 20 20 10 20380 cure % 10 20 10 20400 cure % 10 20 10 20

young's modulus 3.0 3.9 3.8 3.8CTE 36 36 36 36

250 cure MPa - 26 35 30320 cure MPa 28 36 38 36

5% weight loss temp. 480 475 435 475250 cure - 230 250 235320 cure 270 305 320 310350 cure 270 305 380 310380 cure 270 305 400 315400 cure 270 305 430 320

die lectric constant 2.9 2.9 2.9 2.9volume resistance >10^16 >10^16 >10^16 >10^16surface resistance >10^16 >10^16 >10-16 >10-16breakdown voltage >420 >420 >420 >420water absorption 0.6 0.6 0.6 0.6

Tg(TMA)

f ilm property

liquid property

residual stress

life time

elogation

kV/mm

-

cmcm2

%

Gpa(320)ppm/

(320)

mPa.swt%

Mpa(320)um

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PW-series basic propertiesPW-1000 PW-1200 PW-1500 PW-2100

coat spin spin spin spin

prebake 120/3 120/3 120/3 115/33um mJ/cm2 175 150 150 1005um mJ/cm2 400 300 300 1507um mJ/cm2 650 550 550 250

PEB Not required Not required Not required Not requireddevelop 20-120 20-120 20-120 20-120

cure 320-380 250-380 250-380 250-380NMP rt/15min no change no change no change no changeGBL rt/15min no change no change no change no changeEL rt/15min no change no change no change no change

acetone rt/15min crack no change no change no changePGMEA rt/15min no change no change no change no change

resist stripperDMSO/mono-ethanolamine

90/30min50% thickness decrease 10% thickness decrease 10% thickness decrease 10% thickness decrease

25%NaOH 40/10min no change no change no change no change10%KOH 40/10min no change no change no change no change

H2SO4/H2O2 40/10min no change no change no change no change1%HF /5min no change no change no change no change

f lux Deltalux533 290/30sec crack no change no change no changecleaner Pine-arfa 40/30min no change no change no change no change

process performance

chemical resistance

sec/min

exposure

solvent

alkakine

etchant

without HMDS/min

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2. Technical Data

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0 50 100 0 50 100 0 50 100

10000

Oxygen

1

100

250

PCT treatment time

Final Curing Temperature

Cure Koyo-Thermo Systems CLH-21CDPCT :121 C, 2 atm

Adhesion to Substrate (Si and SiN)

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0hr 100hr 0hr 100hr 0hr 100hr

no treatment 0/100 0/100 0/100 90/100 0/100 0/100

0/100 0/100 0/100 30/100 0/100 0/100

CF4(RIE) 0/100 0/100 0/100 0/100 0/100 0/100AR(Spatter) 0/100 0/100 0/100 0/100 0/100 0/100

treatment Ti

O2 (Plasma)

Adhesion

Adhesion to Metals(Cu,Ti,Cr)

Metals is made by spattering process after each treatment.Test method:Peeling test after 0hr,100hr at 150 (peeling pcs/total pcs)

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0

5

10

15

20

25

30

35

40

0 50 100 150 200 250 300 350

Temperature

Resi

dual

Str

ess

M

Pa

Heating

Cooling

Non photosensitive P I (35MPa)

PW-1000

Residual Stress

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MassChemical Group

m/z a RT16030min 16035060min 350500

18 H2O (Imidization 4.32 1.49 1.01

44 CO2(Sensitizer 6.49 1.91 0.93

99 NMPSolvent 5.57 0.09 0.00

4.18 2.00 0.88

28 Organic gas (Sensitizer) 3.05 0.64 1.27

132(

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Patterning Process of PW-1000

Spincoat 700rpm for 10sec and 3000rpm for 30secPrebaking 120oC3min (Hot plate) (Thickness:5.1 m)Exposure 175 mJ/cm2 (g-line, i-line stepper)Development 45 sec. 2 Paddle development (Thickness:4.2 m)

(2.38% TMAH solution)Curing 170oC for 30min+320oC for 60min (N2)

(Thickness:3.1 m)

3

Spincoat 700rpm for 10sec and 2100rpm for 30secPrebaking 115oC3min (Hot plate) (Thickness:8.1 m)Exposure 325 mJ/cm2 (g-line, i-line stepper)Development 45 sec. 2 Paddle development (Thickness:6.9 m)

(2.38% TMAH solution)Curing 170oC for 30min+320oC for 60min (N2)

(Thickness:5.0 m)

5

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Spincoat 700rpm for 10sec and 1600rpm for 30secPrebaking 115oC3min (Hot plate) (Thickness:11.6 m)Exposure 450 mJ/cm2 (g-line, i-line stepper)Development 60 sec.2 Paddle development (Thickness:10.0 m)

(2.38% TMAH solution)Curing 170oC for 30min+320oC for 60min (N2)

(Thickness:7.0 m)

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for 5 m Thickness after Curing(Manual Coating)Coating Recipe(manual coating)

STEP Time Rotate Accell. Dispense(sec) (rpm) (rpm/sec)

1 10.0 200 1000 PI Dispense2 5.0 0 1000 03 10.0 700 2000 04 30.0 2100 1000 05 2.0 0 1000 0

Development Recipe

STEP Time Rotate Accell. Dispense(sec) (rpm) (rpm/sec)

1 1.0 1000 10000 02 3.0 1000 10000 1 73 1.0 500 10000 1 74 1.0 100 10000 1 75 4.0 30 10000 1 76 36.0 0 10000 57 3.0 1000 10000 1 78 1.0 500 10000 1 79 1.0 100 10000 1 7

10 4.0 30 10000 1 711 31.0 0 10000 512 5.0 0 10000 513 5.0 500 10000 3 4 914 5.0 2000 10000 3 4 915 10.0 3000 10000 0

DeveloperTMAH 2.38%Flow rate0.6 L/minRinserwaterFlow rate1.2 L/minBack rinsewaterFlow rate150 mL/minExhaust60 PaNozzleStream Nozzle

Polyimide coating (Mark 7)

C/SCOL 23 X 60 sCOATPre-Bake (HP) 115 X 180 sCOL 23 X 60 sC/S

ExposureI-line Stepper GCA 8000 DSW WAFER STEPPER

Exposure Dose 325 mJ/cm2)focus 0m

Development (Mark 7)C/SDEVC/S

CuringAppratusINH-21CD (Koyo Thermosystem)Heatingr.t. 17030 min 32060 min r.t. (slope 3.5/min)Oxygen concentration

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Coater recipe(Auto)STEP Time Rotation Accel Dispence Arm1 Arm2

1 1.0 0 100 0 1 center W home2 2.0 0 100 0 1 center NW home Dispence No.3 9.0 50 100 1 1 center NW home 1PI dispence4 6.0 50 100 1 1 center NW home 5back rinceOK735 5.0 0 10000 0 1 center NW home 6edge rinceOK736 10.0 1100 10000 0 1 home NW home7 30.0 1530 10000 0 1 home NW home8 5.0 1530 10000 0 1 home NW in19 1.0 1000 10000 6 1 home NW in1 Film thickness is controled in step 7,8.10 30.0 1000 10000 5 6 1 home NW in211 1.0 1000 10000 5 6 1 home NW in112 25.0 1000 10000 5 6 1 home NW in2 Edge rince flow rate10ml/min13 5.0 1000 10000 6 1 home NW in2 Back rince flow rate70ml/min14 1.0 1000 10000 0 1 home NW home15 2.0 500 10000 0 1 home NW home

for 5 m Thickness after Curing(Auto Dispense)

Development Recipe

STEP Time Rotate Accell. Dispense(sec) (rpm) (rpm/sec)

1 1.0 1000 10000 02 3.0 1000 10000 1 73 1.0 500 10000 1 74 1.0 100 10000 1 75 4.0 30 10000 1 76 36.0 0 10000 57 3.0 1000 10000 1 78 1.0 500 10000 1 79 1.0 100 10000 1 7

10 4.0 30 10000 1 711 31.0 0 10000 512 5.0 0 10000 513 5.0 500 10000 3 4 914 5.0 2000 10000 3 4 915 10.0 3000 10000 0

DeveloperTMAH 2.38%Flow rate0.6 L/minRinserwaterFlow rate1.2 L/minBack rinsewaterFlow rate150 mL/minExhaust60 PaNozzleStream Nozzle

Polyimide coating (Mark 7)

C/SCOL 23 X 60 sCOATPre-Bake (HP) 115 X 180 sCOL 23 X 60 sC/S

ExposureI-line Stepper GCA 8000 DSW WAFER STEPPER

Exposure Dose 325 mJ/cm2)focus 0m

Development (Mark 7)C/SDEVC/S

CuringAppratusINH-21CD (Koyo Thermosystem)Heatingr.t. 17030 min 32060 min r.t. (slope 3.5/min)Oxygen concentration

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Keeping days 0 3 7

after coating

Thickness

Thickness afterdeveloping

Sensitivity

0 3 7after exposure

11.52 11.52 11.52

11.52 11.52 11.52

10.06 10.05 10.02

10.06 10.04 9.96

425mJ/cm2

425mJ/cm2

425mJ/cm2

425mJ/cm2 425mJ/cm2

425mJ/cm2

Prebaking Condition 4min (TEL Mark-7)Development Condition solution 120sec(total time)bSensitivity 5m resolution @7m thickness

Keeping days

Thickness

Thickness afterdevelopingSensitivity

Coated Film Stability

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Thickness Range SigmaWafer No.

1 7.8043 2642 7.8000 2333 7.7900 2924 7.8031 3165 7.7936 2596 7.7702 2247 7.8055 2018 7.8558 2549 7.8385 314

10 7.7771 22011 7.7686 22612 7.7380 40813 7.9036 31114 7.8005 37315 7.7960 32916 7.8075 35417 7.8102 49118 7.8467 44519 7.8712 54620 7.8622 38821 7.7697 23422 7.8696 29023 7.8050 20024 7.8281 32925 7.8784

1040713828848772546573711863513606

1121936

1153835

10811264124315531142657676539980168 64

Mean 7.8162

Wafer ThicknessNo1

1 7.82082 7.77083 7.79914 7.78575 7.78836 7.83197 7.85978 7.81499 7.7892

10 7.805211 7.806612 7.755713 7.8280

Mean 7.8043

Range 1040

264

17

13

Coater : Tokyo Electron Mark-7

Film Thickness Uniformity

26

Critical Dimension after Development

Process ConditionPre-baking 1203min (proximity)

(Thickness 7.90m)Exposure tool i-line stepperDevelopment 120sec. Paddle (2.38%TMAH solution)

(Thickness 6.67m)

Mask Size 10

4

6

8

10

12

14

16

150 200 250 300 350

Exposure Dose (mJ/cm2)

Ape

rture

Size

(m

)

Top

Bottom

Mask Size 5

0

2

4

6

8

10

12

150 200 250 300 350

Exposure Dose (mJ/cm2)

Ape

rture

Size

(m

)

Top

Bottom

Mask Size 20

14

16

18

20

22

24

26

150 200 250 300 350

Exposure Dose (mJ/cm2)A

pertu

re S

ize (

m)

Top

Bottom

27

Mask Linearity after Development

Bottom Size

0

5

10

15

20

25

30

150 200 250 300 350

Exposure Dose (mJ/cm2)

Ape

rture

Size

(m

)

5m Mask

10m Mask

20m Mask

Top Size

0

5

10

15

20

25

30

150 200 250 300 350

Exposure Dose (mJ/cm2)

Ape

rture

Size

(m

)

5m Mask

10m Mask

20m Mask

28

Critical Dimension after Curing

Curing ConditionApparatus INH-21CD (Koyo Thermosystem)Heating 14060min+32060min

(slope: 3.4/min)Oxygen under 300ppm (Nitrogen gas purge)

(Thickness 5.12m)

Mask Size 5

0

2

4

6

8

10

12

150 200 250 300 350 400

Exposure Dose (mJ/cm2)

Ape

rture

Size

(m

)

Mask Size 10

4

6

8

10

12

14

16

150 200 250 300 350 400

Exposure Dose (mJ/cm2)

Ape

rture

Size

(m

)

Mask Size 20

14

16

18

20

22

24

26

150 200 250 300 350 400

Exposure Dose (mJ/cm2)A

pertu

re S

ize (

m)

29

Mask Linearity after Curing

BottomSize

0

5

10

15

20

25

30

150 200 250 300 350 400

Exposure Dose (mJ/cm2)

Ape

rture

Size

(m

)

5m Mask10m Mask

20m Mask

Top Size

0

5

10

15

20

25

30

150 200 250 300 350 400

Exposure Dose (mJ/cm2)

Ape

rture

Size

(m

)

5m Mask

10m Mask

20m Mask

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DOF of PW-1000

0123456

-5 0 5

Focus

Actu

al S

ize

DOF of PW-1000

8

9

10

11

-5 0 5Focus

Actu

al S

ize

DOF of PW-1000

18

19

20

21

-5 0 5

Focus

Actu

al S

ize

Mask Linearity of PW-1000

0

20

40

60

0 20 40 60

Mask Size (A

ctu

al S

ize(

DOF and Mask linearity

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Storage Stability

1500cp

3000cp

Viscosity

500

1000

1500

2000

0 5 10 15 20 25 30Storage days (at 23)

mP

a

Viscosity

1000

2000

3000

4000

0 5 10 15 20 25 30Storage days (at 23)

mPa

Exposure Dose

0

200

400

600

800

1000

1200

1400

0 5 10 15Storage days (at 23)

mse

c

Exposure Dose

0

200

400

600

800

1000

1200

1400

0 5 10 15Storage days (at 23)

mse

c

32

0

20

40

60

80

100

0 200 400 600

cure temperature

reac

tion r

ate(%

)

Relationship between Reaction rate and Curing Temperature

33

Supplement

34

exposure

Indene carbonic acid

Photo Reaction

Insoluble in Alkaline Soluble in Alkaline

Sensitizer

Alkaline Developer

Polymer

OH

X

OH

XR R

ON2

SO2OR

COOH

SO2OR

Naphtoquinone diazido

Soluble in Alkaline

Basic Principle of Photosensitivity

Easily SolubleHardly SolublePositive tone pattern

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Toray Positive tone Photosensitive Polyimide

Negative tone Photosensitive Polyimide/Ester type

Comparison of Negative-tone and Positive-tone Polyimide Structure

COOR*

O

NH

OHN

*ROOC

NN

O

O

O

O

Polyamic acid ester

Heat

nn

Polyimide

R*NR2+H2O

CH2CH2OO

O

R*:

Polyamic acid ester

R*: CH3

COOR*

O

NH

OHN

HN

*ROOCn

H2COSi

CH3

CH3

COOR*

O

NH

O

*ROOC xy

m

Heat

R*

O

N

O

HN

H2COSi

CH3

CH3

x yN

OO

Si-unit

36

Assumed Model Adhesion between PI and EMC

Negative tone Photosensitive Polyimide/Ester type

Toray Positive tone Photosensitive PolyimidePolymerSi-unit

Curing

Epoxy MoldingCompound Direct bonding

Epoxy Molding Compound

Curing

Polymer

Indirect bonding

Si unit additives

37

Suflic acid+

Hydrogen Peroxide

FumedNitric acid

40C for 1hr. No change

RT 1hr. No change50C 10min Completely Resolved

NMP, DMF, IPA, MEK etc. Inert

Cured Film

Uncured Film(As developed)

NMP GBL Cyclo-Pentanone Ethyl-lactate Acetone IPA

Easily soluble Easily soluble SolubleEasily soluble InsolubleInsoluble

Positive resist stripper, such as TOK-106, can be removed PW-1000 before curing easily.

Stability for Chemicals

38

etchin

0.00

0.50

1.00

1.50

2.00

2.50

3.00

3.50

0 1 2 3 4 5 6

Treatment

Etc

hin

g th

ickn

ess

OFPR-800

PW-1000

BG-2480

etching

0.00

1.00

2.00

3.00

4.00

5.00

0 1 2 3 4 5 6

Treatment time (min.)

Etc

hin

g th

ickn

ess

OFPR-800

PW-1000

BG-2480

etching

0.00

0.20

0.40

0.60

0.80

1.00

0 2 4 6

Treatment time (min.)

Etc

hin

g th

ickn

ess

OFPR-800

PW-

BG-2480

RIE conditionApparatus Reactive Ion Etching Model RIE-IONsamcoGas O2: 50.2 SCCM

CF4/O2: 25.1/25.3 SCCMCF4: 50.0 SCCM

RF-Power RF-cont: 500FWD: 278W REF: 1WTime 1min, 3min, 5minPressure 0.60 Torr

Plasma Etch Resistance of PW-1000

39

Characteristic Curve of "PW-1000(5 m Thickness after Curing)

Exposure: i-line Stepper (GCA DSW-8000:NA=0.42)Thickness:7.8m after Prebaking on Si

0%

20%

40%

60%

80%

100%

1 10 100 1000 10000

115120125

Nor

mal

ized

Rem

aini

ngFi

lm T

hick

ness

Exposure Dose(mJ/cm2)

Prebaking Temperature

Lithographic Performance on I-Line Exposure System

40

Koyo-Thermo Systems CLH-21CD170 C30min X 60min

540 10 %OK400 C

522 20 %OK350 C

480 30 %OK320 C

5%Weight Loss Temp.Elongation

AdhesionSi, Al, SiNafter PCT 400 Hr

Curing Temp.

Effect of Curing Condition (PW-1000)