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PRODUCT GUIDE
2006-3
Power MOSFETs
h t t p : / / w w w . s e m i c o n . t o s h i b a . co . j p / e n g
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C O N T E N T S
1 Features and Structure .......................................................2
2 New Power MOSFET Products and Part Numbering Scheme ....3
3 Selection Guide.............................................................4 to 74 Power MOSFET Characteristics
1. VS/PS Series .....................................................................8
2. STP Series ................................................................... .....9
3. TSSOP-8 Series ..............................................................10
4. TSSOP Advance Series...................................................11
5. SOP Series ................................................................... ...12
6. SOP Advance Series .......................................................14
7. U-MOSIII (Trench Type) Series .......................................15
8. High-Speed U-MOSIIISeries...........................................16
9. -MOSVII/-MOSVSeries ..............................................17 (VDSS = 100 to 250 V)
10. High-Speed -MOSV Series ..........................................18 (VDSS = 450 to 600 V)
11. -MOSIV/VI Series (VDSS = 450 to 900 V).........................19
12. -MOS Series..................................................................21
5 Power Modules ..................................................................25
6 Product Index.............................................................26 to 29
7 Superseded, Final-Phase and Discontinued Product List ...30 to 31
8 Package List ..............................................................32 to 39
Power MOSFETs
All power MOSFETs have the following features:1) No carrier storage effect; superior frequency and switching characteristics2) Ruggedness, no current concentration3) Voltage-controlled device, hence low drive power4) Easy parallel connection
Gate
Double-Diffusion Structure
Drain
n+
n+P P
n+
n
SourceGate
Trench Structure
Drain
n+
n+
P P
n+
n
Source
Features and Structure
q-MOSToshiba Power MOSFETs use a double-
diffusion MOS (D-MOS) structure, whichproduces high-withstand voltage, to form
channels. This structure is especially well
suited to high-withstand voltage and high-current devices.
A high level of integration yields a high-performance power MOSFET with low
ON-resistance and low power loss.
qU-MOSHigher channel density is
achieved by connectingchannels vertically to form
a U-groove at the gateregion, a structure that
yields a lower ON-
resistance than otherMOSFET structures.
s Structure of Toshiba Power MOSFETs
s Toshiba Power MOSFETs have the following additional features:
1) Guaranteed avalanche capability No absorber circuit required
2) Improved functioning of built-in diodes Greatly expanded circuit design possibilities
3) High ruggedness Better margin for circuit design
4) High-speed switching Higher speed in end products operation
5) Low R(DS)ON Reduced end products power consumption
6) Downsized packages Slimmer, more compact end products
7) Low drive loss Reduced end products power consumption
8) Zener diode between gate and source Improved electrostatic immunity between gate and source
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New Power MOSFET Products
Part Numbering Schemes Low-Voltage and Multi-Pin Series
The SOP Series products are compact and thin, and require only a smallmounting area. They are suitable for lithium-ion secondary batteryprotection and for notebook PCs.
SOP Series VDSS = 20 V to 60 V
The STP Series is housed in an ultra-small and slim package and issuitable for use in lithium-ion secondary battery protection circuits invarious portable electronic devices.
STP Series
Very compact and thin, the VS and PS Series products are suitable forvarious uses in portable electronic devices.
VS and PS Series VDSS = 12 V to 30 V
The -MOSIV/VI Series has a chip design optimized to reduce the Qgcharacteristic.
-MOSIV/VI Series VDSS = 450 V to 900 V
High-integration is achieved using a trench structure technique. Low-voltage driving (VGS = 4 V) is possible due to ultra-low ON-resistance.
U-MOSIII Series VDSS = 40 V to 100 V
Ultra-High-Speed U-MOSIIISeries VDSS = 60 V to 100 V
By employing submicron technology and reducing gate charge, thislatest series realizes extremely high speed and low RDS(ON).
-MOSVII/-MOSV Series VDSS = 100 V to 250 V
The new -MOSV High-Speed Series achieves higher switching speedthan the -MOSV Series, which is currently well established in the mar-ket. Two series are available: the High-Speed Switching Series and theHigh-Speed Diode Series
q Lithium-ion secondary battery protection circuitsq Notebook PCs q Portable electronic devicesq DC/DC converters
q Lithium-ion secondary battery protection circuits
q Cell phones q Notebook PCsq Portable electronic devices
sApplications
sApplications
sApplications
sApplications
sApplications
sApplications
sApplications
q DC/DC converters q Motor driversq Switching power supplies q AC adapters
q Motor drivers q Solenoids and lamp drivers
q Digital amps q DC/DC convertersq Motor drivers
sApplications
q Switching power supplies q AC adaptersq Motor drivers
q Inverters q AC adapters q Motor drivers
q Switching power supplies
High-Speed -MOSVSeries VDSS= 250 V to 600 V
Serial number of products
0: Single N-channel
1: Single P-channel
2: Dual N-channel
3: Dual P-channel
4: Dual N-channel and P-channel
A: N-channel and SBD
B: P-channel and SBD
J : P-channel and NPN
TPC6 0 01
TPC6: VS-6 Series
TPCF8: VS-8 Series
TPCP8: PS-8 Series
TPCS8: TSSOP-8 Series
TPCM8: TSSOP Advance Series
TPC8: SOP-8 Series
TPCA8: SOP Advance Series
TPCT4: STP Series
s New Medium- and High-Power Voltage Series
Additional information1: Low-capacitance type2: Fast body diode type
Voltage: 10% of the VDSSX
Current
TK: N-channelTJ: P-channel
PackageA: TO-220SISH: TO-3P(W)D: TO-220(W)N: PW-Mold (SMD)
SeriesA: -MOSIVC: -MOSVI
J:U-MOSIIIS: DT MOS
TK 10 A 60 S 1s Conventional Series
N-channel MOS
P-channel MOS
2SK
2SJ
New Power MOSFET Products
All products have a protection zener diode between gate and source. And the latest productsguarantee avalanche capability in both single and series power MOSFETs .
The new Ultra-High-Speed Trench Series realizes high speed and low ON-resistance and offers a VDSS of 60 V to 100 V and a 50% reduction in Qg-RDS(ON) trade-off (compared with conventional products). This series ofMOSFETs is housed in TO-220 packages, allowing them to be used forsecondary-side synchronous rectification of switching power supplies.
3
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Selection Guide
4
TPCF8A01(0.049)
TPCF8201(0.049)
TPCS8209(0.05)
TPCF8301(0.11)
VDSS(V)
ID(A)16 20 30 40
TPC8208(0.05)TPCS8209(0.03)
TPCS8210(0.03)
TPCS8302(0.035)
50 60 100 150 18
2SK2615(0.3)2SK2961(0.3)2SK3658(0.3)
2SJ681(0.17)2SJ378(0.19)
2SJ438(0.19)2SK2229(0.16)
2SK4033(0.1)
2SK2741(0.16)
2SK2201(0.35)2SK4018(0.35)
2SK2200(0.35)
2SJ338
2SK216
2SJ313
2SK201
TPC6107(0.055)
12
TPC6104(0.04)
TPCT4201(0.0255)
TPCP8402(0.077)
TPC6108(0.06)TPC8405(0.033)
1
1.31.71.81.9
2
2.5
2.1
2.7
3
3.5
3.4
3.2
4.5
5
5.5
7
7.2
7.5
8
8.5
9
6
6.5
4
4.2
0.5
4.7
5.6
2SK2963(0.7)
2SJ508(1.9)2SK2962(0.7)
2SJ509(1.9)
2SK3670(1.7)2SJ360(0.73)2SJ507(0.7)
2SK2989(0.15) 2SJ668(0.17) 2SK2399(0.23)2SK2400(0.23)
2SK3205(0.52)2SJ537(0.19)
2SJ669(0.17)
TPCP8402(0.072) TPCP8403(0.070)
TPCP8101(0.030)
TPCP8301(0.031)TPCP8302(0.033)
TPCP8403(0.040)
TPCP8202(0.023)
TPCF8402(0.077)TPCF8304(0.072)
TPCF8B01(0.11)
TPC6105(0.11)
TPC8401(0.038)TPC6103(0.035)
TPC8211(0.036)
TPC8104-H(0.065)
TPCS8303(0.021)
TPC8A01(0.018)
TPC8210(0.015)
TPC8021-H(0.017)
TPCA8009-H (0.35)
TPC8110(0.025)
TPCA8020-H(0.027)
2SK24672SJ440(
TPCF8302(0.059)TPCF8303(0.058)
TPCF8402(0.05)
TPCF8103(0.11)
TPCF8101 (0.028)
TPCF8001(0.023)
TPCP8001-H(0.016)
TPCP8002(0.0137)
TPCS8009-H(0.35)
TPCP8201(0.05)
TPCF8001(0.032)
TPC6004(0.024)
TPC8207(0.02)TPCS8211(0.024)TPCS8204(0.017)
TPCS8102(0.02)TPCS8302(0.035)TPCS8212(0.024)TPCS8208(0.017)
TPCS8213(0.013)
TPCF8102(0.030)
TPC8212-H(0.021)
TPC8209(0.04)
TPCT4202(0.038)TPC6003(0.024)
TPCP8J01(0.035)(-32V)
TPCS8214 (0.135)
TPCT4201 (0.031)TPC8405(0.026)
TPC8A01(0.025)
TPCF8104(0.028)
TPC6005(0.028)
P
2SK4017(0.1)
2SK4019(0.23)
PackageNew product
series
PW-Mini
TO-220NIS
TO-9
TO-2
VS-6 mPS-8 : -MOSIII
: -MOSV
: -MOSVI
: L2--MOSV
VS-8
SOP-8 Lead clamp
: L2--MOSVI
: U-MOS TO-220SISSOP Advance
: -MOSVII
: -MOSIV
STPLegend
TPC8406-H(0.027)TPC8406-H(0.03)
TPC8116-H (0.03)TPCA8107-H(0.03)
TPC8022-H(0.027)
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2SK3312(1.25) 2SK3761(1.25)
2SK3473(1.6)2SK3878(1.3)
200 250 400 450 500 600 700 800 900 1000
2SK3543(2.45)2SJ610(2.55)
CS8004-H(0.8)TPCS8008-H(0.58)
TPCA8008-H (0.58)
C8012-H(0.4)
VDSS(V)
ID(A)
1
1.31.71.81.9
2
2.5
2.7
2.1
3
3.5
3.4
3.2
4.5
4.7
5
5.5
5.6
7
7.2
7.5
8
8.5
9
6
6.5
4
4.2
0.52SK3302(18)2SK2998(20)
2SK3471(18)
2SK2845(9)2SK2733(9.0)
2SK3301(20)
2SK2718(6.4)
2SK2700(4.3)2SK2608(4.3)
2SK2719(4.3)2SK2883(3.6)2SK2603(3.6)
2SK3371(9)2SK3374(4.6)
K2992(3.5)
SJ407(1.0)SK2381(0.8)SK2835(0.8)SK2920(0.8)
2SK3863(1.5)
2SK3462(1.7)
2SK3342(1.0)
2SK2599(3.2)2SK3373(3.2)
2SK2862(3.2)
2SK2846(5.0)
2SK3067(5.0)2SK2865(5.0)
2SK2750(2.2)2SK3085(2.2)
CA8010-H(0.45)
2SK3766(2.45)
2SJ512(1.25)
2SJ516(0.8)
2SK2417(0.5)
2SK2662(1.5)2SK2661(1.5)2SK2991(1.5)
2SK3417(1.8)
2SK3466(1.5)
2SK3868(1.7)2SK3758(1.5)
2SK2274(1.7)
2SK1930(3.8)2SK1119(3.8)
2SK2838(1.2)
2SK2604(2.2)2SK2605(2.2)2SK2884(2.2)
2SK3879(1.7)2SK3880(1.7)
2SK2717(2.5)
2SK3700(2.5)
2SK1359(3.8)2SK3565(2.5)
2SK3742(2.5)
2SK4013(1.7) 2SK4014(2.0)
TK09H90A(1.3)
TK07H90A(2.0)
2SK2542(0.85)2SK2543(0.85)2SK2776(0.85)2SK3538(0.85)
2SK2952(0.55)K2350(0.4)
2SK2914(0.5)
2SK2544(1.25)2SK2545(1.25)2SK2602(1.25)
2SK2777(1.25)
2SK3633(1.7) 2SK2749(2.0)
2SK2613(1.7)
2SK1365(1.8)
2SK2847(1.4)2SK3799(1.3)
2SK3017(1.25)
2SK2606(1.2)
2SK2611(1.4)2SK2607(1.2)
2SK3316(1.8)
PCS8007-H(0.45)
2SK3563(1.5)
2SK3562(1.25)
2SK3947(1.4)
2SK3667(1.0)
[ 2SK4042(0.97)]2SK3561(0.85)
2SK3564(4.3)
2SK3567(2.2)
2SK3566(6.4)
2SK3798(3.5)
2SK3757(2.45)
2SK3767(4.5)
J680(2.0)
2SK4022(1.7)
2SK4021(1.0)
SK4020(0.8)
2SK4026(9)
2SK4003(2.2)2SK3975(2.2)
2SK4002(5)
J567(2.0)
2SK2679(1.2)
2SK3498(5.5)
2SK3472(4.6)
DPW-Mold
O-220(W) TO-3P(SM)TO-220FL/SM
TSSOP-8
TFP
SOP-8
TO-3P(N)ISTO-3P(N) TO-3P(W)TO-3P(L)
TPS P = P-chCN = Complementary N-chCP = Complementary P-ch
NS = N-ch + SBDPS = P-ch + SBD[ ] = Under development
PD = P-ch + Driver(load switch)
Notes:( ) = RDS(ON) max$ = 10-V drive# = 2.5-V drive
= 1.8-V drive= High-speed diode
N = N-ch
TSSOP AdvanceNew PW-Mold2New PW-Mold
2SK4023(4.6)
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Power MOSFET Characteristics
8
sFeatures Ultra-low ON-resistance achieved by employing the U-MOSIII process
Zener diode between gate and source for all products Thin package, with a height as low as 0.85 mm (max) when mounted on a board
sFeatures Ultra-low ON-resistance achieved by employing the U-MOSIII process Zener diode between gate and source for all products Thin package, with a height as low as 0.85 mm (max) when mounted on a board 32% mounting area reduction compared with the VS-6 (TSOP-6) Series, employing a
flat package with high cell density PD = 2.5 W @ t = 5 s when the device is mounted on a glass epoxy board
sFeatures Mounting area the same as the VS-6 (TSOP-6) Series Using flat leads and the latest U-MOS process (U-MOSIV), the VS-6 Series
offers a 70% RDS(ON) reduction compared with the VS-6 Series. Zener diode between gate and source for all products
VS-6 Series
VS-8 Series
PS-8 Series
s Product List
sProduct List
sProduct List
*: VGS = 4 V
1. VS/PS Series
VDSS(V) ID(A) 10 V 4.5 V 2.5 V 2.0 V 1.8 V
RDS(ON) max (m) Ciss typ.(pF)
Qg typ.(nC)
20 6 24 32 37 17 1400 S2C30 6 24 32 25 1250 S2D30 6 28 35 41 19 1420 S2E
20 2.7 110 160 300 6 470 S3E20 4.5 55 100 180 9.8 680 S3G20 5.5 40 60 120 19 1430 S3D
TPC6004TPC6003TPC6005TPC6105TPC6107
TPC610430 4.5 60 100 13 570 S3HTPC6108
N-chSingle
P-chSingle
U-MOSIII
U-MOSIII
U-MOSIIIU-MOSIIIU-MOSIVU-MOSIIIU-MOSIV
12 5.5 35 55 90 20 1520 S3CTPC6103 U-MOSIII
VDSS(V) ID(A) 10 V 4.5 V 2.5 V 2.0 V 1.8 V
RDS(ON) max (m) Ciss typ.(pF)
Qg typ.(nC)
U-MOSIIIU-MOSIIIU-MOSIIIU-MOSIIIU-MOSIVU-MOSIIIU-MOSIIIU-MOSIVU-MOSIVU-MOSIVU-MOSIIIU-MOSIVU-MOSIIIU-MOSIII
TPCF8001 30 7 N-ch Single 23 31 25.4 1270 F2ATPCF8101 12 6 28 40 85 18 1600 F3ATPCF8103 20 2.7 110 160 300 6 470 F3CTPCF8102 20 6 30 41 90 19 1550 F3B
TPCF8104 30 6 28 38 34 1760 F3DTPCF8201 20 3 N-ch Dual 49 66 100 7.5 590 F4ATPCF8301 20 2.7 110 160 300 6 470 F5ATPCF8302 20 3 59 95 200 11 800 F5B
TPCF8303 20 3 58 87 250 11 860 F5CTPCF8304 30 3.2 72 105 14 600 F5D
30 4 50 77 10 47030 3.2 72 105 14 600
TPCF8A01 20 3.0 N-ch+SBD 49 66 100 7.5 590 F7ATPCF8B01 20 2.7 P-ch+SBD 110 160 300 6 470 F8A
P-ch Dual
TPCF8402 F6BN-ch+P-ch
P-ch Single
VDSS(V) ID(A)
RDS(ON) max (m)
10 V 4.5 V 2.5 V 1.8 V
TPCP8201 30 4.2 50 77 U-MOSIII
U-MOSIV
U-MOSIII
U-MOSIII
TPCP840120 0.1 3 * 4
TPCP8402
12 5.5 38
77
58 103
TPCP8J01
30 4.2 50
30 3.4 72 105 U-MOSIV
32 6.0 35 49 *
U-MOSIV
50 0.1 U-MOSIII
N-ch / P-chLoad Switch
TPCP8202 30 5.5 23 39 U-MOSIVN-ch Dual
TPCP8301 20 5 31 60 U-MOSIV
TPCP8302 20 5 33 * 45 95 U-MOSIVP-ch Dual
P-ch Single
TPCP8002 20 9.1 10 13.7 U-MOSIVN-ch Single
TPCP8001-H 30 7.2 16 25 Ultra-high-speed U-MOSIII
TPCP8101 20 5.6 30 41 90 U-MOSIII
N-ch + P-ch
U-MOSIIITPCP8403
60 40 4.7 40
40 3.4 70 105 U-MOSIV
N-ch + P-ch
N-ch + NPN
Marking SeriesPart NumberMaximum Ratings Circuit
Configuration
Part NumberMaximum Ratings Circuit
Configuration SeriesMarking
Part NumberMaximum Ratings Circuit
Configuration Series
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sFeatures
Achieves the smallest mounting area per unit ON-resistance, a 64% reduction in area ratio compared with the TSSOP-8 package.
The slimmest package, a 0.3 mm reduction in mounting height compared with the TSSOP-8 package.
Compatible with an ON-resistance range that can be used in overcurrent protection circuits.
sOverview of the Smart Thin Package
< Lithium-ion Battery Protection Circuit >
< Recommended Land Pattern > < Package Dimensions >
Top Bottom
Unit: mm
G1 S1
G2 S2
0.5
S1
S2
0.2 0.42 0.75
2.33
0.4
0.50.52.0
3.8
0.450.45
0.6
2.891.21
0.56
0.9
0.42
< Trend in Small Surface-Mount Packages Used in PCMs >
350
300
250
200
150
100
50
0TSSOP-8 STP
2.0
6.4
3.8
3.3 max
2.8
2.9
ControlIC
RDS(ON)perM
ountingAreabyUnit
RDS(ON
)xA(mW
.A)
Toshiba PS-8 Class Package
70% reduction
Comparison of typical RDS(ON) values when the VGS is 4.0 V.
Unit: mm
2. STP Series
s Product List
TPCT4201 20 6 37 27 Available Available
U-MOSIII
TPCT4202 30 6 40 32 Available Available
VSSS(V)VGS= 2.5 V VGS= 4 V
25.5
30.5
VGS= 4.5 VIS(A)
RSS(ON) typ. (m)Series
Schedules
Sample Mass productionPart Number
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Power MOSFET Characteristics
10
s Features
Application of third-generation design of ultra-high cell
density trench technology (18 Mcell/cm2)
ON-resistance reduced by 25% compared with that of
conventional products (in comparison with Toshiba U-MOSII) RDS(ON)typ.(m)@VGS=4V
20
15
10
5
0
D2 S2 S2 G2
D1 S1 S1 G1
D2 S2 S2 G2
D1 S1 S1 G1
Common-draintype
s Features
Achieved RDS(ON) = 17 m for TPCS8204 employing U-MOSIII design
Common-drain types are available:
Ideal for use in lithium-ion battery protection and reverse current prevention circuits
Control IC
s Product List
3. TSSOP-8 Series
Low ON-resistance5N-channel 20-V products (TSSOP-8/dual type)
Dual type /VDSS = 20 V
Common-Drain Type5Common-drain series suitable for reverse current prevention in portable electronic devices
and lithium-ion secondary battery protection
Total impedancereduced by eliminationof external wiring
DC/DCconverter
Charger
Reverse current prevention
Battery protection
Conventional type
External wiring resistancefor connecting D1 and D2.
U-MOSII U-MOSIII U-MOSIV
-MOSV MACHII
-MOSV MACHII
U-MOSIV
U-MOSIV
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIV
U-MOSIII
U-MOSIII
-MOSV
-MOSV MACHII
10 V 4 V 2.5 V 2.0 V
10 600TPCS8007-H 200 1.9 450
600 10TPCS8008-H 250 1.7 580
TPCS8104 30 11 12 18 107 5710
TPCS8105 30 11 13.5 19.5 107 5710
TPCS8209 20 5 30 40 60 15 1280
TPCS8210 20 5 30 40 60 15 1280
TPCS8204 20 6 17 22 35 22 2160
TPCS8208 20 6 17 22 35 22 2160
TPCS8211 20 6 24 29 45 20 1590
TPCS8213 20 6 13 18 49 3140
TPCS8302 20 6 35# 60 95 28.5 1590
TPCS8214 30 6 13.5 18.5 42 3240
TPCS8212 20 6 24 29 45 20 1590
20 5 21# 30 80 33 2560TPCS8303P-ch Dual
P-ch Single
N-ch Dual
VDSS(V) ID(A)
RDS(ON) max (m) Ciss typ.(pF)
Qg typ.(nC)
TPCS8004 200 1.3 800 12 380
10 600TPCS8009-H 150 2.1 350 N-ch Single
SeriesPart NumberMaximum Ratings Circuit
Configuration
: Drain-common type #: VGS = 4.5 V
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0.8
1 4
8 50.05 M A
0.250.05
0.2+00.2
0.55
0.50.1
4.650.3
3.650.2
0.05 S
3.50.20.750.05
0.1660.05
S
A
(mm2)
(mm)
(C/W)
(C/W)
(A)
(m)
SOP-8
30
1.9
65.8
18
1.6
TSSOP Advance
16.3
0.8
54.3
4.2
30
0.5
s Features
Lower ON-resistance and thinner package (0.8 mm max) achieved by
employing flat leads and an AI strap structure
High current and high power dissipation achieved by having an exposedheatsink on the bottom of the package (ID(DC) = 20 A, PD = 30 W)
4. TSSOP Advance Series NEW
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4PD - Ta
0 25 50 75 100 125 150 175
SOP-8PD = 0.43 W
TSSOP AdvancePD = 0.51 W
PD - Ta
0 25 50 75 100 125 150 1750.0
0.1
0.2
0.3
0.4
0.5
0.6
SOP-8PD = 0.43 W
TSSOP AdvancePD = 0.51 W
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
PCB area
Total height (max)
rth (ch-a) (t = 10s) (Note 1)
rth (ch-c)
Current rating
Package resistance(Note 2)
46% reduction
Low profile
High power dissipation
High current guarantee
Al strap stractureNote 1: When mounted on a glass-epoxy board (25.4 mm 25.4 mm 0.8 mm)Note 2: Without chip resistance
This new package, almost half the mounting area of the SOP-8, offers power dissipation approximately 1.1 times higherthan that of the SOP-8 package, having an exposed heatsink on its bottom.
s High Power Dissipation
DrainPowerD
issipationPD(W)
Ambient Temperature Ta (C)
Device mounted on a glass -epoxy boardFR-4 25.4 25.4 0.8 mm(Note 1)
Power dissipation = 120%
(Mounted area = 50%)
TSSOP
Advance
mounted
board
SOP-8
mounted
board
(Note 1)
TSSOP
Advance
mounted
board
SOP-8
mounted
board
(Note 2)
DrainPowerDissipationPD(W)
Ambient Temperature Ta (C)
Device mounted on a glass -epoxy boardFR-4 25.4 25.4 0.8 mm(Note 2)
Power dissipation = 110%
(Mounted area = 50%)
1.050.2
2.20.2
8 5
1 4
0.80.1
0.60.1
2.750.2
Features of TSSOP Advance
s Product List
VDSS(V) ID(A) VGS = 4.5 V VGS = 10 V
30 20 14 9.5 6.0TPCM8001-H
RDS(ON)max (m) Qsw typ. (nC)VDS = 24 V
Ultra-high-speed U-MOSIII
Part Number Maximum Ratings Series
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Power MOSFET Characteristics
12
Ultra-High-Speed U-MOSIII Series
s Electrical Characteristics Comparison
NEW
NEW
Top View
Bottom View
High Side
Low Side
SBD[CMS01]
5. SOP Series
MOSBD (MOSFET with SBD)
DC/DC converters for portable electronicdevices and notebook PCs
s Applications
s
Efficiency Characteristics
RDS(ON)(m)@VGS = 4.5 V QSW(nC)
43% RDS(ON) Qsw reduction(Compared with high-speed U-MOSIII)
s Features
Low gate switch charge: 14% reduction compared withthe high-speed U-MOSIII process
Low ON-resistance (Al straps): 34% reduction comparedwith the high-speed U-MOSIII process
High current, low-profile package with superior powerdissipation: housed in SOP Advance
s Reference BoardAn evaluation kit is provided in the form of a 3-phase synchronous rectificationbuck converter for evaluating ultra-high-speed power MOSFETs.
Input/output voltage range
Input = 5 V to 19 VOutput = 1.075 V to 1.850 V
Maximum output current: 60 A (3-phase)
High efficiency
3-phase Switching frequency: 250 kHz, 300 kHz or external frequency
s Features
DownsizingIntegrating a MOSFET, used for the low side, and an SBD ina single package
High-efficiencyReduced wire inductance through the use of a monolithicstructure that combines a MOSFET and an SBD
A MOSFET that uses the ultra-high-speed U-MOSIII process
Operating temperatureChannel temperature: guaranteed 150C
Guaranteed avalanche capability
High-Speed U-MOSIII Ultra-High-Speed U-MOSIIITPC8009-H TPC8017-H
RDS (ON) (m) 11 7.3
Qsw (nC) 9.1 7.8
Cgd (pF) 250 175
Cgs (pF) 1210 1290
RDS (ON) QSW (mnC) 100.1 56.9
Capacitance ratio (Cgd/Cgs) 20.7% 13.6%
* RDS(ON): VGS= 4.5 V typ.QSW: VDS= 24 V typ.Cgd/Cgs: VDS= 10 V typ.
s Electrical Characteristics Comparison
Performance Index:
improved 43%
Reduced capacitance
Shoot-throughcurrent control
91
10 Iout (A) 100
90
89
88
87
86
85
84
83
82
81
80
@Vin = 19 V, Vout = 1.5 V, f = 300 kHz, Burst mode, Ta = 25 C, High side: 1 MOSFET, Low side: 2 MOSFETs
Efficiency Characteristics
Ultra-high-speed U-MOSIIISOP Advance type
TPCA8003-H+TPCA8004-H
Ultra-high-speed U-MOSIII
SOP-8 typeTPC8017-H+TPC8018-H
High-speed U-MOSIII
(conventional type)SOP-8 type
TPC8009+TPCA8013-H
Ultra-high-speed U-MOSIIISOP Advance type
TPCA8005-H+TPCA8003-H
Ultra-high-speed U-MOSIII
SOP Advance typeTPCA8005-H+TPCA8004-H
Imprmproved bed by thethecombination of highombination of highside and loide and low sidesideImproved by thecombination of highside and low side
Imprmproved bed byemplomploying an SOPing an SOPAddvance pacnce packaageImproved byemploying an SOPAdvance package
Design impresign improvementementthrhrough the ultra-ugh the ultra-high-speed U-MOSigh-speed U-MOS IIIIIIDesign improvementthrough the ultra-high-speed U-MOSIII
Efficiency(%)
TPCA8020-H + TPC8A02-H(MOSBD)
Iout (A)
90
86
88
84
82
80
78
76
740 5 10 15 20
TPC8020-H+
TPC8018-H + CUS02
TPC8020-H+
TPC8017-H + CUS02
@ f = 300 kHz, Vin = 19 V, Vout =1 .5 V, High side: 1 MOSFET, Low side: 2 MOSFETs
Efficiency(%)
High side TPC8020-H 9.5
TPC8017-H 7.3Low side
TPC8018-H 4.8
CUS02
6.9
TPC8A02-H 6.2 11
7.8
12.0
0.45 (Note) Note: VDSF
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SOP-8 Series
sFeatures
A selection of low ON-resistance and high-speed switching productsLow ON-resistance Series: U-MOSIII/IV
High-speed switching Series: high-speed U-MOSIII, ultra-high-speed U-MOSIII
ON-resistance reduction through the use of an Al strap structure
s Product List
10 V 4.5 V 4 V 2.5 VVDSS(V) ID(A)
RDS(ON) max (m) Qg typ.
(nC)
Cisstyp.
(pF)
23 139530 13 9 13
30 11 14 22 39 1860 U-MOS III
64030 11 17 25 11
30 15 6.6 9.5 25 146530 18 4.6 6.2 38 2265
200 1.8 400 11 440
20 5 50 70 9.5 780 U-MOSIII
20 6 20 30 22 2010 U-MOSIII
30 5 40 60 15 600 U-MOSII
30 5.5 36 44 25 1250 U-MOSIII
30 6 21 27 16 840
30 8 15 20 75 3530 U-MOSIII
N-ch
Single
N-chDual
30 10 20 30 45 2260 U-MOSIII
30 11 12 18 107 5710 U-MOS IV
30 11 10 18 107 4500 U-MOS IV
30 13 7 15 130 5880 U-MOSIII
30 13 6 14 130 5880 U-MOSIII
30 18 4.5 6.8 180 7480 U-MOSIV
20 10 10 14 115 9130 U-MOS IV
40 8 25 35 48 2180 U-MOSIII
40 7.5 30 37 27 1190
30 16/1 5.6 8.5 34 1970
30 6 26 33 27 1240 U-MOSIII
30 4.5 33 42 40 1540 U-MOSIV
30 6 25 30 17 940
30 8.5/1 18 21 49 2295 U-MOSIII
P-chSingle
N-ch/
N-ch+SBD
N-ch+SBD
40 6.5 27 35 11 65
40 6.5 30 37 27 1970
N-ch/P-chDual
-MOSV
TPC8020-H
TPC8014
TPC8021-H
TPC8017-H TPC8018-H
TPC8012-H
TPC8208
TPC8207
TPC8209
TPC8211
TPC8212-H
TPC8210
TPC8109
TPC8111
TPC8113
TPC8107
TPC8112
TPC8114
TPC8115
TPC8110
TPC8116-H
TPC8A02-H
TPC8405
TPC8A01
TPC8406-H
TPC8022-H 40 7.5 27 35 11 650
SeriesPart NumberMaximum Ratings Circuit
Configuration
Ultra-high-speed U-MOSIII
Ultra-high-speed U-MOSIII
Ultra-high-speed U-MOSIIIUltra-high-speed U-MOSIII
Ultra-high-speed U-MOSIII
Ultra-high-speed U-MOSIII
Ultra-high-speed U-MOSIII
Ultra-high-speed U-MOSIII
Ultra-high-speed U-MOSIII
High-speed U-MOSIII
Ultra-high-speed U-MOSIII
: Al straps
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Power MOSFET Characteristics
14
1.27
1 4
8 50.05 M A
0.05 S
0.40.1
0.150.05
5.00.2
0.595
0.50.1
6.00.3
0.950.05
0.1660.05
1.10.2
3.50.2
5.00.2
8 5
1 4
0.80.1
0.60.1
S
A
6. SOP Advance Series NEW
s Features
Mounting area identical to that of the SOP-8 Series
A lower ON-resistance and a thinner package (1.0 mm max) achieved by
employing flat leads and an AI strap structureHigh current and high power dissipation achieved by having an exposed heatsink
on the bottom of the package (ID(DC) = 40 A, PD = 45 W)
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
PCB area
Total height (max)
rth(ch-a) (t = 10s)(Note 1)
rth(ch-c)
Current rating
Package resistance (Note 2)
(mm2
)
(mm)
(C/W)
(C/W)
(A)
(m)
Features of SOP Advance
Same PCB area as SOP-8
Low profile
High power dissipation
High current guarantee
Al strap stracture
SOP-8
30
1.9
65.8
18
1.6
SOP Advance
30
1.0
44.6
2.78
40
0.5
Note 1: When mounted on a glass-epoxy board (25.4 mm 25.4 mm 0.8 mm)Note 2: Without chip resistance
s Product List
Portable electronic devices: DC/DC converters for notebook PCss Applications
4.250.2
VDSS(V) ID(A) 10V 4.5V 2.5V
30 27 9 13 24 1395
30 35 6.6 9.5 25 1465
30 40 4.6 6.2 37 2265
30 40 6 109 4600U-MOSIII
TPCA8005-H
20 40 3.5 7.5 32 2900TPCA8011-H
TPCA8003-H
TPCA8004-H
40 30 9 14 22 1365TPCA8014-H
TPCA8015-H
60
40
25
35
21
5.4
26
7.9
22
37
1375
2155
TPCA8016-H
100 18 67 12 780TPCA8006-H -MOSVI
150 7 350 10 600
-MOSV MACHII
TPCA8009-H
200 5.5 450 10 600
600
TPCA8010-H
250 4 580
10TPCA8008-H
TPCA8102
TPCA8103 30 40 4.2
4.0V
14
12 6 33 51 18 1600TPCA8105
40 7.5 27 11 650TPCA8020-H 35
40 7.5 30 27 1190TPCA8107-H 37
6.8 184 7880 U-MOSIV
TPCA8104 60 40 16 24 90 4300 U-MOSIII
N-chSingle
P-chSingle
P-ch Single
RDS(ON) max(m) Qg typ.(nC)
Ciss typ.(pF)Part Number
Maximum Ratings CircuitConfiguration
Series
Ultra-high-speed U-MOSIII
Ultra-high-speed U-MOSIII
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7. U-MOSIII (Trench Type) Series
sRDS(ON) = 5.8 m (max) MOSFET housed in TO-220 package
Poly Si
P PP
N
N N N N
N+
Poly Si
P P P
N
N+ N+ N+
N+
N+
VGS = 10 V2SK3844
50
40
30
20
10
0 0.2 0.4 0.6 0.8 1.0
IDVDS
0
Employing submicron trench-processing technology
contributes to higher integration of the new product, so
making it possible to realize ultra-low ON-resistance.
An approximately 60% reduction in the ON-resistance
compared with previous products
Support of lower power dissipation in high current
applications
60% reduction
By employing a trench structure, this ultra-low ON-resistance series achieves extremely high integration.
Planar structure
Drain
Source Gate
Trench (U-MOS) Structure
Source Gate
Drain
s Product List
s Feature
High density through the use of submicron technology
60 % RDS(ON) reduced by per unit area (as compared with the maximum RDS(ON) of the L2
--MOSV) Guaranteed avalanche capability and improved in di/dt capability Protection zener diode between gate and source
DrainCurrentID(A)
Drain-Source Voltage VDS (V)
Previousdevice
Commonsource
TC = 25C
2SJ668
2SK3662
2SK3842
2SK3844
2SK3845
60
60
60
60
60
5
35
75
45
70
20
35
125
45
125
New PW-Mold
TO-220NIS
TFP
TO-220NIS
TO-3P(N)
12.5
170
5.8
5.8
5.8
10
10
10
10
10
18
38
23
23
2.5
19
250
4
4
2.5
18
38 8.0 4.5 38
16 28 4.5 16
13 28 4.5 13
15
2SJ669 60 5 1.2 TPS 170 10 2.5 250 4 2.5 15
2SJ681 60 5 20 New PW-Mold2 170 10 2.5 2.5 4 2.5 15
TPCA8104 60 40 45 SOP Advance 16 10 20 24 4 20 90
91
210
40
402SK3846 40 26 TO-220NIS 18 10
2SK3847 40 32 TO-220SM 18 10
2SK3843 40 75
25
30
2.5 150 4 2.5 152SK4017 60 5 New PW-Mold2 100 1020
2.5 150 4 2.5 152SK4033 60 5 New PW-Mold 100 1020
35 2002SK3940 75 70 TO-3P(N) 7.0 10150
38 10 4.5 38 1962SK4034 60 75 TFP 5.8 10125
125 TFP 3.5 10
196
196
2SK3754 30 5 25 TO-220NIS 89 10 2.5 99 4.5 2.5 2.5
196
VGS(V) VGS(V)
RDS(ON)max(m)
RDS(ON)max
(m)ID(A) ID(A) ID(A)PD(W)VDSS(V)
Qg typ.
(nC)Package
Maximum RatingsApplications
PartNumber
Motor drivesolenoids
Lamp driversDC/DC converters
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Power MOSFET Characteristics
16
s Product List
s Qg-RDS(ON) Trade-Off
s Characteristics of High-Speed Series
*: Under development
5.1
6.26.2
8.4
6.4
7.87.8
10.5
87
8686
96
30
2727
33
60
7575
100
TK70D06J1
TK60D08J1*TK60A08J1*
TK55D10J1*
70
6060
55
140
14045
140
TO-220W
TO-220WTO-220SIS
TO-220W
RDS(ON) (m) VGS = 10 V Qsw (nC) (Typ.)
ID (A)VDSS(V) VDS = VDSS *0.8, ID = ID (DC)
PD
PD(W) Typ. Max
Qg (nC) (Typ.)Package
Maximum RatingsPart Number
x VDSS = 60 V
x VDSS = 60 V57% Qg reduction compared with products featuring the approximate RDS(ON)
x VDSS = 100 V (Under development)63% RDS(ON) reduction compared with products featuring the approximate Crss
x VDSS = 100 V (Under development)Qg-RDS(ON)
Drain-Source ON resistance RDS(ON) (m)
00
50
100
150
200
250
5 10 15 20 25
TotalGateChargeQg(nC)
Low RDS(ON) Type
UHSIIISeries
TK70D06J1
00
50
100
150
200
250
300
350
10 20 30
Qg-RDS(ON)
Drain-Source ON resistance RDS(ON) (m)
TotalGateChargeQg(nC)
Low RDS(ON) Type
UHSIIISeries
TK55D10J1
20 nc/div
VGS = 2 V/div
VDS = 48 VID = 70 ATa = 25C
Low RDS(ON)TypeTK70D06J1
00.0 0.2 0.4 0.6 0.8 1.0
10
20
3040
50
60
70
80
90
100
Drain-Source Voltage VDS (V)
ID-VDS
Drain
CurrentID(A)
TK70D06J1
Low RDS(ON) Type
CommonsourceTa = 25C
1000.1 1 10 100
1000
10000
Capacitance-VDS
Drain-Source Voltage VDS (V)
Capacitance(pF)
Common sourceVGS = 0 V, f = 1 MHz
Ta = 25C
TK55D10J1
Low RDS(ON) Type Ciss
Coss
Crss
00.0 0.4 0.8 1.2 1.6 2.0
10
20
3040
50
60
70
80
90
100
Drain-Source Voltage VDS (V)
ID-VDS
DrainCurrentID(A)
TK55D10J1
Low RDS(ON) Type
CommonsourceTa = 25C
63% reduction
8. High-Speed U-MOS III Series
The ultra-high-speed trench series realizes high speed and low ON-resistance and offers a VDSSof 60 V to 100 V and a 50% reduction in Qg-RDS(ON) trade-off. (Part of the series is underdevelopment.) This series of MOSFETs is housed in TO-220 packages, allowing them to be usedfor secondary-side synchronous rectification of switching power supplies.
s Features
Low ON-resistance achieved by high density through the use of submicron technology Approximately 50% reduction in Qg-RDS(ON) trade-off (compared with conventional products)
through an optimized trench structure
Guaranteed avalanche capability
Protection zener diode between gate and source
High power dissipation achieved by having the series housed in the TO-220(W) package with anexposed heatsink on the bottom of the package
57% reduction
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9. -MOSVII/-MOSVSeries (VDSS = 100 to 250 V)
RDS(ON) max(m)ID(A) Ciss typ.(pF) Crss typ.(pF) Qg typ.(nC) Qsw typ.(nC)VDSS(V) SeriesPackageMaximum RatingsPart Number
s Product List
By employing submicron technology and reducing the gate charge, this latest series achieves
extremely high speed and low RDS(ON).
s Features
Low RDS(ON) Total gate charge (Qg) reduction
High-speed switching High avalanche capability
s Applications
Digital amps
DC/DC converters Motor drives
s Comparison of Switching Characteristics with -MOSVII
TPCA8008-H 20 10 3.7580 600250 4
2SK3669
SOP Advance
New PW-Mold125 480 9 8.0 4.2100 10
TPCA8006-H
-MOSV
MACH-II
SOP Advance67 780 17 12 6.9100 18
TPCS8009-H TSSOP-8350 600 20 10 3.3150 2.1
TPCS8007-H TSSOP-8450 600 20 10 3.3200 1.9
TPCS8008-H TSSOP-8580 600 20 10 3.3250 1.7
TPCA8009-H SOP Advance350 600 20 10 3.7150 7
TPCA8010-H SOP Advance450 600 20 10 3.7200 5.5
-MOSVII
2SK2399(-MOSV) 2SK3669(-MOSVII)
2SK2399(-MOSV) 2SK3669(-MOSVII)
VDS = 10 V/div
VGS = 2 V/div
VDS = 10 V/div
VGS = 2 V/div
VDS = 10 V/div
VGS = 2 V/div
VGS = 2 V/div
VDS = 20 V/div
0
0 0
0
10 ns/div 10 ns/div
50 ns/div 50 ns/div
20
16
12
8
4
00 5 10 15 20 25 30
2SK3669(-MOSVII)
2SK2399(-MOSV)
s Dynamic Input / Output Characteristics (-MOSVII Series)
Total Gate Charge Qg(nC)
Gate-SourceVoltageVGS(V)
Common sourceTc = 25CID = 10 AVDD = 80 VPulse test
65% reduction
ON
Off
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Power MOSFET Characteristics
18
10. High-speed -MOSV Series (VDSS = 450 to 600 V)
0
2SK2842 (Equivalent Exisiting product)
200 ns/div
2SK3313 (High Speed)
200 ns/div
0
Qg40%
reduction
s Characteristics of MACHII SeriesSwitching loss reduced by 40%
s Characteristics of High-Speed Diode SeriesFaster parasitic diode
2SK3310 TO-220NIS
TO-220FL/SM2SK3309
0.65
0.65
40
65
65
450
450
10
10
10
10
5
5
23
23
2SK3126
TO-220NIS2SK3743 0.440450 13 10 6 34
TO-220FL/SM2SK3403 0.4100450 13 10 6 34
TO-220FL/SM2SK3312 1.25600 6 10 3 25 2SK2777
TO-220FL/SM2SK3437 180600 10 10 5 28 2SK2996
TO-3P(N)2SK3911 0.32150600 20 10 10 60
TO-3P(N)2SK3907 0.23150500 23 10 11.5 60
TO-220FL/SM2SK3399 0.75100600 10 10 5 35 2SK2866
VGS(V)ID(A)
ID(A)PD(W)VDSS(V)
RDS(ON)max()
Qgtyp.(nC)
TO-220NIS2SK3316 1.835
35
500 5 10 2.5 60 2SK2662
1.7 10 2.5 150 2SK3563TO-220SIS2SK3868 500 5
2SK4042 TO-220SIS 0.9740500 8 10 4 185 2SK3561
2SK3417 TO-220FL/SM 1.850500 5 10 2.5 60 2SK2991
TO-220NIS2SK3313
2SK3314
2SK3131
2SK4016
0.6240500 12 10 6 90 2SK2842
TO-3P(N)
TO-3P(L)
TO-220SIS
0.49
0.11
0.50
150
250
50
500
500
600
15
50
13
10
10
10
7
25
6.5
105
105
160
2SK2698
2SK3132
2SK3797
2SK4015 TO-220SIS 0.8645600 10 10 5 170 2SK3569
2SK3906 TO-3P(N) 0.33150600 20 10 10 400 2SK3911
2SK3936 TO-3P(N) 0.25150500 23 10 11.5 380 2SK39072SK3947 TO-220NIS 1.440600 6 10 3 150 2SK3562
VGS(V)ID(A)
ID(A)PD(W)VDSS(V)
RDS(ON)max()
trrtyp.(ns)
ID = 10 A/div
ID = 10 A/div
VDS: 100 V/div
VGS: 2 V/div
10 nC/div
Qg = 92 nC
VDS: 100 V/div
VGS: 2 V/div
10 nC/div
Qg = 56 nC
Equivalent Existing product
600V MACH-II 2SK3911
MACH-I
MACH-II
s Product List MACH Series
To foster the development of high-efficiency equipment, Toshiba has developed two series of
high-speed Power MOSFETs: a High-Speed Switching Series for AC adapters and switching
power supplies; and a High-Speed Diode Series for motor controllers and inverter circuits.
The MACH Series: Achieves a higher switching speed than the existing -MOSV Series, which is currentlywell established in the market.
The High-Speed Diode Series: Achieves a higher parasitic-diode speed by using lifetime control (trr 100 ns)
Package SeriesEquivalent
ExistingPart Number
Maximum RatingsApplications
AC adaptersSwitching powersupplies
Part Number
High-Speed Diode Series (HSD Series)
Package
EquivalentExisting
Part Number
Maximum RatingsApplications
Motor ControlInverterSwitching power
supplies
Part Number
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s Features
11. -MOSIV/VI Series(VDSS = 450 to 900 V)
q-MOSVISeries (VDSS = 450 to 600 V)
A 17% reduction in the Qg characteristic compared with equivalent existing products through an optimized chip design
A switching characteristic (toff) 15% faster than that of equivalent existing productsGuaranteed avalanche capability for all products
q-MOSIV Series (VDSS = 800 to 900 V)
A 37% reduction in the Qg characteristic compared with equivalent existing products through an optimized chip design
A switching characteristic (toff) 15% faster than that of equivalent existing products
Guaranteed avalanche capability for all products
qTO-220SIS and TO-3P(W) packages
Cu connectors link the pellets and outer leads of these packages to improve their heat dissipation.
The mounting height of the TO-220SIS is reduced by approximately 2.8 mm compared with the existing package,
the TO-220NIS. This helps make end products even slimmer and more compact.
s Product List
Existing EquivalentPart Number
PackagePart NumberSeries
-MOSVI
-MOSIV
2SK3757
2SK3766
2SK3869
2SK3935
2SK3904
2SK3563
2SK3863
2SK3561
2SK3568
2SK4012
2SK3934TK15H50C
2SK3905
TK19H50C
TK20H50C
2SK3767
2SK3567
2SK3562
2SK3667
2SK3569
2SK3797
2SK3903
TK16H60C
2SK3633
2SK3879
2SK3880
2SK4013
2SK3566
2SK3564
2SK3798
2SK3565
2SK3742
2SK3700
2SK4014
TK07H90A
2SK3799
2SK3473
2SK3878
TK09H90A
2SK3543
2SK3543
2SK3407
2SK2662
2SK2543
2SK2842
2SK2698
2SK3905
2SK2837
2SK3067
2SK2750
2SK2545
2SK2996
2SK2843
2SK2915
2SK2746
2SK2718
2SK2700
2SK2717
2SK2717
2SK2610
2SK2749
2SK2611/2SK2968
2
2
10
17
19
5
5
8
12
13
1515
17
19
20
2
3.5
6
7.5
10
13
14
16
7
6.5
6.5
6
2.5
3
4
5
5
5
6
7
8
9
9
9
2.45
2.45
0.68
0.25
0.26
1.5
1.5
0.85
0.52
0.4
0.30.4
0.31
0.3
0.27
4.5
2.2
1.25
1.0
0.75
0.43
0.44
0.4
1.7
1.7
1.7
1.7
6.4
4.3
3.5
2.5
2.5
2.5
2.0
2.0
1.3
1.6
1.3
1.3
9
8
28
62
62
16
16
28
42
50
6248
62
62
62
9
17
28
33
42
62
62
62
35
35
35
45
12
17
26
28
25
28
45
45
60
38
60
60
330
270
1050
3100
3100
550
550
1050
1500
2400
31002450
3100
3100
3100
320
550
1050
1300
1500
3150
3100
3150
1500
1500
1500
1400
470
700
800
1150
1150
1150
1400
1650
2200
1450
2200
2200
450
500
600
800
900
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-3P(N)
TO-220SIS
DP
TO-220SIS
TO-220SIS
TO-220SIS
PW-MoldTO-3P(W)
TO-3P(N)
TO-3P(W)
TO-3P(W)
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-3P(N)
TO-3P(W)
TO-3P(N)
TO-220FL/SM
TO-3P(N)IS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-3P(N)
TO-220SIS
TO-3P(W)
TO-220SIS
TO-3P(N)
TO-3P(N)
TO-3P(W)
VDSS(V) VGS= 10 VID (A)
RDS(ON)max () Qgtyp.(nC)
CiSStyp.(pF)
Maximum Ratings
7/27/2019 Power Mosfets
20/40
Power MOSFET Characteristics
20
Existing Product New Product
2SK2698 TK15H50C
VDSS(V) 500 500
ID(A) 15 15
RDS(ON)() 0.4 (max) 0.4 (max)
Qg(nC) 58 (typ.) 48 (typ.)
toff(ns) 260 (typ.) 220 (typ.)
t = 50 ns/div
ID = 2 A/div
VGS = 2 V/div
VDS = 50 V/ns
2SK3565
2SK2717
Existing Product New Product
2SK2717 2SK3565
VDSS(V) 900 900
ID(A) 5 5
RDS(ON)() 2.5 (max) 2.5 (max)
Qg(nC) 45 (typ.) 28 (typ.)
toff(ns) 200 (typ.) 170 (typ.)
s -MOSVI Series (VDSS = 500 V)
qCharacteristic comparison
s Improved Heat Dissipation
qQg characteristicVDS = 400 V, ID = 14 A, Tc = 25 C
s -MOSIV Series (VDSS = 900 V)
qCharacteristic comparison
qSwitching characteristicVDS = 200 V, VGS = 10 V, ID = 3 A, Rg = 50 , Tc = 25 C
VGS = 2 V/div
VDS = 100 V/div
Qg = 48 nC
TO-3P(W) -MOSVI Design
VGS = 2 V/div
10nC/div
VDS = 100 V/div
Qg = 58 nC
TO-3P(N) -MOSV Design
Qg: 17%reduction
Switching-Off Waveform Comparison
< Conventional design > < TO-220SIS, TO3P(W) >
Power dissipationefficiency
improvement
Heat generatedfrom the chip surface isdissipated to the pins at
both ends via the
connectors.
7/27/2019 Power Mosfets
21/4021
12. -MOS Seriess L
2--MOSV,VISeries (VDSS= 30 V to 150 V)
DP2SK2614 50 0.032 0.046 10 10 0.055 0.08 4 5 2520 40
TO-220NIS2SK2507 0.046 10 12 0.058 0.08 4 6 2550 0.03425 30
TO-220NIS2SK2886 50 0.014 0.02 10 25 0.027 0.036 4 25 6645 40
TO-3P(N)2SK2744 50 0.015 0.02 10 25 6845 125
TO-3P(N)2SK2550 50 0.024 0.030 10 25 3645 100
TO-3P(N)2SK2551 50 0.0072 0.011 10 25 13050 150
VDSS(V)
ID(A)
PD(W)
RDS(ON) () RDS(ON) () Qg typ.(nC)typ. max typ. max
2SK2989 LSTM50 0.125 0.9 0.15 10 2.5 0.24 0.33 4 1.3 6.5
VGS (V) ID (A) VGS (V) ID (A)
TO-220FL/SM2SK3051 0.024 0.03 10 25 3650 45 40
2SK2233 60 1045 100 TO-3P(N) 0.022 0.03 25 0.04 0.055 4 15 60
2SK2266 60 1045 65 TO-220FL/SM 0.022 0.03 25 0.04 0.055 4 15 60
2SK2376 60 1045 100 TO-220FL/SM 0.013 0.017 25 0.019 0.025 4 25 110
2SK2398 60 1045 100 TO-3P(N) 0.022 0.03 25 60
2SK2173 60 1050 125 TO-3P(N) 0.013 0.017 25 0.019 0.025 4 25 110
2SK2445 60 1050 125 110TO-3P(N) 0.014 0.018 25
102SK2962 100 1 0.9 LSTM 0.5 0.7 0.5 0.65 0.95 4 0.5 6.3
PW-Mini2SK2963 100 101 0.5 0.5 0.7 0.5 0.65 0.95 4 0.5 6.3
102SK2267 60 60 150 0.008 0.011 30 0.012 0.015 4 30 170TO-3P(L)
2SK2313 60 1060 150 0.008 0.011 30 0.012 0.015 4 30 170TO-3P(N)
TPS2SK2200 100 103 1.3 0.28 0.35 2 0.36 0.45 4 2 13.5
102SK2201 100 3 20 New PW-Mold 0.28 0.35 2 0.36 0.45 4 2 13.5
102SK4018 100 3 20 New PW-Mold2 0.28 0.35 2 0.35 0.45 4 2 13.5
New PW-Mold2SK2399 100 105 20 0.17 0.23 2.5 0.22 0.3 4 2.5 22
2SK2400 100 105 1.2 TPS 0.17 0.23 2.5 0.22 0.3 4 2.5 22
2SK4019 100 105 20 New PW-Mold2 0.17 0.23 2.5 0.22 0.3 4 2.5 22
TO-220NIS2SK2391 100 1020 35 0.068 0.085 10 0.09 0.13 4 10 50
2SK2314 100 1027 75 TO-220AB 0.066 0.085 15 0.09 0.13 4 15 50
TO-220FL/SM2SK2789 100 1027 60 0.066 0.085 15 0.09 0.13 4 15 50
TO-3P(N)2SK3506 30 1045 100 0.016 0.02 25 39
2SK3387 150 1018 100 TFP 0.08 0.12 9 0.09 0.18 4 9 57
TO-3P(N)2SK3129 50 1060 150 0.0055 0.007 30 0.008 0.01 4 30 135
2SK2745 TO-3P(N)50 0.00750 150 0.0095 10 25 0.011 0.016 4 25 130
LSTM 5.82SK2961 60 0.2 0.27 10 1 0.26 0.38 4 12 0.9
2SK2615 60 0.23 0.3 10 0.33 0.44 4 1 62 0.5 PW-Mini 1
2SK2229 2.560 0.12 0.16 10 0.2 0.3 4 1.3 125 1.2 TPS
2SK2782 60 0.039 0.055 10 10 0.06 0.090 4 5 2520 40 DP
TO-220NIS2SK2232 60 0.036 0.046 10 12 0.057 0.08 4 12 3825 35
TO-220FL/SM2SK2311 0.036 0.046 10 12 0.057 0.08 4 12 3860 25 40
TO-220NIS2SK2385 60 0.022 0.03 10 18 0.04 0.055 4 15 6036 40
PackagePart Number
2SJ360 60 0.55 0.73 10 0.5 0.86 1.2 4 0.5 6.51 0.5 PW-Mini
2SJ378 60 0.16 0.19 10 2.5 0.24 0.28 4 2.5 225 1.2 TPS
2SJ438 60 0.16 0.19 10 2.5 0.24 0.28 4 2.5 225 25 TO-220NIS
2SJ349 60 0.033 0.045 10 10 0.05 0.09 4 10 9020 45 TO-220NIS
0.045 10 10 0.05 0.09 4 10 90TO-220FL/SM2SJ401 60 0.03320 100
TO-220NIS2SJ334 60 0.029 0.038 10 15 0.046 0.06 4 15 11030 45
TO-220FL/SM 0.029 0.038 10 15 0.06 4 15 1102SJ402 60 30 100 0.046
6.31.682SJ508 100 1.34 1.9 10 0.5 2.5 4 0.51 1.5 PW-Mini
6.31.34 1.9 10 0.5 1.68 2.5 4 0.52SJ509 100 1 0.9 LSTM
TO-220NIS2SJ380 100 0.15 0.21 10 6 0.25 0.32 4 6 4812 35
TFP 62SJ619 100 0.15 0.21 10 0.25 0.32 4 6 4816 75
TFP 92SJ620 100 0.063 0.09 10 0.085 0.12 4 9 14018 25
TO-220NIS 92SJ464 100 0.064 0.09 10 0.085 0.12 4 9 14018 45
TO-220FL/SM 0.15 0.21 10 0.25 0.32 4 6 482SJ412 100 16 60 6
LSTM 182SJ537 50 0.16 0.19 10 2.5 0.27 0.34 4 1.35 0.9
2SJ507 60 0.5 0.7 10 0.72 1.0 4 0.5 5.61 0.9 LSTM 0.5
7/27/2019 Power Mosfets
22/40
Power MOSFET Characteristics
22
VGS(V)
PD(W)
RDS(ON)()VDSS
(V)ID
(A)ID(A)
Qgtyp.(nC)typ. max
s -MOSVSeries (VDSS= 150 V to 250 V)
Package
Maximum Ratings
Applications Part Number
DC/DC convertersMonitorsMotor controllers
2SJ618
2SJ407
2SJ567
2SJ676
2SJ680
2SJ610
2SJ512
2SJ516
2SK3670
2SK3205
2SK2882
2SK3443
2SK3497
2SK2992
2SK2835
2SK2381
2SK2920
2SK4020
2SK2350
2SK2965
2SK2382
2SK2401
2SK3625
2SK3444
2SK3176
2SK3462
2SK4022
2SK3342
2SK4021
2SK2417
2SK2914
2SK2508
2SK2598
2SK2993
2SK3994
2SK3388
2SK3445
2SK2967
2SK2995
0.8
1.6
1.6
1.6
1.85
1.0
0.6
1.0
0.36
0.08
0.05
2.2
0.56
0.56
0.56
0.52
0.26
0.15
0.13
0.13
0.065
0.067
0.038
1.2
1.2
0.80.8
0.42
0.42
0.18
0.18
0.082
0.090
0.082
0.09
0.048
0.048
TO-3P(N)
TO-220NIS
New PW-Mold
TPS
New PW-Mold2
PW-Mold
TO-220NIS
TO-220NIS
LSTM
PW-Mold
TO-220NIS
TFP
TO-3P(N)
PW-Mini
TPS
TO-220NIS
New PW-Mold
New PW-Mold2
TO-220NIS
TO-220NIS
TO-220NIS
TO-220FL/SM
TO-220FL/SM
TFP
TO-3P(N)
New PW-Mold
New PW-Mold2
New PW-MoldNew PW-Mold2
TO-220NIS
TO-220AB
TO-220NIS
TO-220FL/SM
TO-220FL/SM
TO-220NIS
TFP
TFP
TO-3P(N)
TO-3P(N)IS
130
30
20
1.3
20
20
30
35
0.9
20
45
125
130
1.5
1.3
25
20
20
30
35
45
75
100
125
150
20
20
2020
30
20
45
60
100
45
125
125
150
90
180
200
200
200
200
250
250
250
150
150
150
150
180
200
200
200
200
200
200
200
200
200
200
200
250
250
250
250250
250
250
250
250
250
250
250
250
250
250
10
5
2.5
2.5
2.5
2
5
6.5
0.67
5
18
30
10
1
5
5
5
5
8.5
11
15
15
25
25
30
3
3
4.54.5
7.5
7.5
13
13
20
20
20
20
30
30
0.37
1.0
2.0
2.0
2.0
2.55
1.25
0.8
1.7
0.5
0.12
0.055
0.15
3.5
0.8
0.8
0.8
0.8
0.4
0.26
0.18
0.18
0.082
0.082
0.052
1.7
1.7
1.01.0
0.5
0.5
0.25
0.25
0.105
0.105
0.105
0.105
0.068
0.068
10
10
10
10
10
10
10
10
4
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
1010
10
10
10
10
10
10
10
10
10
10
18
20
10
10
10
24
22
29
4.6
12
57
45
3
10
10
10
10
17
30
40
40
44
44
125
12
12
10
10
20
20
40
40
100
45
100
45
132
132
5
2.5
1.5
1.5
1.5
1.0
2.5
3
0.5
2.5
9
15
5
0.5
2.5
2.5
2.5
2.5
5
5.5
10
10
12.5
12.5
15
1.5
1.5
2.52.5
3.5
3.5
6.5
6.5
10
10
10
10
15
15
7/27/2019 Power Mosfets
23/4023
Qgtyp.(nC)
2SK2838
2SK2679
2SK2952
2SK28412SK2949
2SK3499
2SK3472
2SK3374
2SK4023
2SK3543
2SK3126
2SK3407
2SK3544
2SK2998
2SK3302
2SK3471
2SK2599
2SK3373
2SK2862
2SK2661
2SK2662
2SK2991
2SK3466
2SK2542
2SK2543
2SK2776
2SK3538
2SK2601
2SK2842
2SK3068
2SK3398
2SK2916
2SK2698
2SK2917
2SK2837
2SK3117
2SK3132
2SK3371
2SK4026
2SK2846
2SK2865
2SK4002
2SK3067
2SK4003
2SK3975
2SK2750
2SK3085
2SK2544
2SK2545
2SK3130
2SK2777
2SK2602
2SK3312
2SK2996
2SK2843
2SK3438
2SK2889
2SK2866
2SK2699
2SK2953
2SK2915
2SK3265
2SK3453
400
400
400
400400
400
450
450
450
450
450
450
450
500
500
500
500
500
500500
500
500
500
500
500
500
500
500
500
500
500
500
500
500500
500
500
600
600
600
600
600
600
600
600
600
600
600
600600
600
600
600
600
600
600
600
600
600
600
600
700
700
40
35
40
8080
80
20
20
20
30
40
40
100
0.9
1.3
0.5
1.3
20
2575
35
50
50
80
40
65
65
125
40
100
100
80
150
90150
150
250
20
20
1.3
20
20
25
20
20
35
75
80
4040
65
125
65
45
45
80
100
125
150
90
150
45
80
TO-220FL/SM
TO-220NIS
TO-220NIS
TO-220 ABTO-220FL/SM
TFP
New PW-Mold
TPS
New PW-Mold2
TO-220NIS
TO-220NIS
TO-220NIS
TFP
LSTM
TPS
PW-Mini
TPS
PW-Mold
TO-220NISTO-220 AB
TO-220NIS
TO-220FL/SM
TO-220FL/SM
TO-220 AB
TO-220NIS
TO-220FL/SM
TFP
TO-3P(N)
TO-220NIS
TO-220FL/SM
TFP
TO-3P(N)IS
TO-3P(N)
TO-3P(N)ISTO-3P(N)
TO-3P(SM)
TO-3P(L)
New PW-Mold
New PW-Mold2
TPS
New PW-Mold
New PW-Mold2
TO-220NIS
New PW-Mold2
New PW-Mold
TO-220NIS
TO-220AB
TO-220AB
TO-220NISTO-220NIS
TO-220FL/SM
TO-3P(N)
TO-220FL/SM
TO-220NIS
TO-220NIS
TFP
TO-220FL/SM
TO-220AB
TO-3P(N)
TO-3P(N)IS
TO-3P(N)
TO-220NIS
TO-3P(N)IS
0.84
0.84
0.4
0.40.4
0.4
4.0
3.7
4.0
1.9
0.48
0.48
0.29
10
10
10
2.9
2.9
2.91.35
1.35
1.35
1.35
0.75
0.75
0.75
0.75
0.56
0.4
0.4
0.4
0.35
0.35
0.210.21
0.21
0.07
6.4
6.4
4.2
4.2
4.2
4.2
1.7
1.7
1.7
1.7
0.9
0.91.26
0.9
0.9
0.95
0.74
0.54
0.78
0.54
0.54
0.5
0.31
0.31
0.72
0.72
1.2
1.2
0.55
0.550.55
0.55
4.6
4.6
4.6
2.45
0.65
0.65
0.4
18
18
18
3.2
3.2
3.21.5
1.5
1.5
1.5
0.85
0.85
0.85
0.85
1.0
0.52
0.52
0.52
0.4
0.4
0.270.27
0.27
0.095
9.0
9
5.0
5.0
5
5.0
2.2
2.2
2.2
2.2
1.25
1.251.55
1.25
1.25
1.25
1.0
0.75
1.0
0.75
0.75
0.65
0.4
0.4
1.0
1.0
10
10
10
1010
10
10
10
10
10
10
10
10
10
10
10
10
10
1010
10
10
10
10
10
10
10
10
10
10
10
10
10
1010
10
10
10
10
10
10
10
10
10
10
10
10
10
1010
10
10
10
10
10
10
10
10
10
10
10
10
10
3
3
5
55
5
0.5
5
0.5
1
5
5
6
0.25
0.25
0.25
1
1
12.5
2.5
2.5
2.5
4
4
4
4
5
6
6
6
7
7
1010
10
25
0.5
0.5
1
1
1
1
1.5
1.5
1.8
1.8
3
33
3
3
3
5
5
5
5
5
6
8
8
5
5
17
17
34
3434
34
5
5
5
9
35
33
34
3.8
3.8
3.8
9
9
917
17
17
17
30
30
30
30
30
45
45
45
58
58
8080
80
280
9
9
9
9
9
9
20
20
20
20
30
3030
30
30
22
38
45
28
45
45
58
80
80
53
53
ID(A)
VDSS(V)
5.5
5.5
8.5
1010
10
1
1
1
2
10
10
13
0.5
0.5
0.5
2
2
35
5
5
5
8
8
8
8
10
12
12
12
14
15
1820
20
50
1
1
2
2
2
2
3
3
3.5
3.5
6
66
6
6
6
10
10
10
10
10
12
15
16
10
10
PD(W) typ. max
VGS(V)
ID(A)
RDS(ON)()
s -MOSVSeries (VDSS= 400 V to 700 V)
Package
Maximum RatingsApplications Part Number
AC 115 Vswitching powersupplies
Ballast invertersMotor controllers
7/27/2019 Power Mosfets
24/40
Power MOSFET Characteristics
24
3.0
3.0
1.9
1.9
1.9
1.3
1.0
1.0
15
8.0
8.0
5.6
3.73
3.7
3.7
2.3
2.3
1.1
1.05
1.2
1.1
1.05
1.4
3.6
3.6
2.2
2.2
2.2
1.7
1.2
1.2
20
9.0
9.0
6.4
4.3
4.3
4.3
2.5
2.5
1.4
1.25
1.4
1.4
1.25
1.7
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
1.5
15
3.0
3.0
3.0
3.5
4.0
4.0
0.5
0.5
0.5
1.5
1.5
1.5
1.5
3.0
3.0
3.5
4.0
4.0
4.0
4
8.0
2SK2603 TO-220AB800 1003
2SK2604
5
TO-3P(N)
800
125
2SK2605
5800
TO-220NIS45
2SK2746 7 TO-3P(N)800 150
2SK2607
2SK2884
2SK3301
9 TO-3P(N)800 150
5800
TO-220FL/SM100
1 PW-Mold900 20
2SK2733 1900 TO-220AB60
TO-220NIS2SK2718 2.5900 40
2SK2608 3900 TO-220AB100
2SK2700 3900 TO-220NIS40
2SK2719 3 TO-3P(N)900 125
2SK2610 5 TO-3P(N)900 150
2SK2717 5900 TO-220NIS45
2SK2749 7 TO-3P(N)900 150
2SK2847 8 TO-3P(N)IS900 85
2SK2611 9 TO-3P(N)900 150
2SK2883 3800 TO-220FL/SM75
2SK2845 1900 DP40
2SK3017 8.5 TO-3P(N)IS900 90
2SK2606 8 TO-3P(N)IS800 85
PD(W)
RDS(ON)()
VDSS(V) ID(A) Typ. Max VGS(V) ID(A)
Qg
typ.
(nC)
25
25
34
34
34
55
68
68
6
15
15
21
25
25
25
45
45
55
58
70
58
70
652SK2613 8 TO-3P(N)1000 150
2SK2968 10 TO-3P(N)900 150
s -MOSIIISeries (VDSS = 800 V to 1000 V)
PackageMaximum Ratings
Part Number
7/27/2019 Power Mosfets
25/40
Power Modules
25
Unit: mm
N-ch 4
P-ch 4
N-ch 2 +
P-ch 2
MP4210
MP4209
MP4211
MP4208
MP4212
60
100
60
60
60
60
4
4
4
4
4
(typ.) (max)
5
3
5
5
5
5
10
10
10
10
10
10
Y
Y
Y
Y
Y
2.5
2.0
2.5
2.5
2.5
2.5
0.12
0.28
0.16
0.20
0.12
0.16
0.16
0.35
0.19
0.30
0.16
0.19
VGS(V)
ID(A)
PT(Ta = 25C)
(W)
RDS(ON)()VDSS
(V)ID
(A)
N-ch 2 +
P-ch 2
with FB-Di
N-ch 4
N-ch 3 +
P-ch 3
MP4411
MP4412
MP4410
MP6404
100
100
60
60
60
4.4
4.4
4.4
4.4
(typ.) (max)
3
5
5
5
5
10
10
10
10
10
Y
Y
Y
Y
2.0
2.5
2.5
2.5
2.5
0.28
0.17
0.12
0.12
0.16
0.35
0.23
0.16
0.16
0.19
VGS(V)
ID(A)
PT(Ta = 25C)
(W)
RDS(ON)()VDSS
(V)ID
(A)
q S-13M Series (6in1)
N-ch 6
MP6602
MP6622
MP6631
60
500
600
6
6
7
20
5
5
10
10
10
3-phase PWM
3-phase PWM
3-phase PWM
10
2.5
2.5
0.028
1.7
1.4
VGS(V)
ID(A)
PT(Ta = 25C)
(W)
RDS(ON)() Max
VDSS(V)
ID(A)
s Package Dimensions
S-10M S-12M S-13M
: Under development
25.2 0.2
0.55 0.15
1.1 0.15
2.54
1 10
9.00.2
0.50.15
4.00.2
1.2
2.3
7.5
0.5
31.5 0.240 0.4
30 0.2
3.5 0.2
0.57 0.2 2.45
1
0.64 0.2
3.81 3.175.082.54
3 3.5
3.2
0.2 M A
3
3.2
1.2
40.2
15.1
70.2
7.370.2
120.5
1.
8
0.
2
0.85 0.15
1.3 0.152.54
1 12
10.
50.
2
0.50.15
4.00.1
1.7
2.2
10.
0
0.5
A
S-10M Series (4-in-1)
Power modules enable high-density mounting and are the simplest of all multichip devices instructural terms. Use of these modules enables the construction of compact power supplies forelectronic equipment.
s Product List
Maximum Ratings Electrical Characteristics (Ta = 25 C)Polarity and
CircuitConfiguration
Part Number 4-V Drive
S-12M Series (4-in-1, 6-in-1)
Maximum Ratings Electrical Characteristics (Ta = 25 C)Polarity and
CircuitConfiguration
Part Number 4-V Drive
Maximum Ratings Electrical Characteristics (Ta = 25 C)Polarity and
CircuitConfiguration
Part Number Application
7/27/2019 Power Mosfets
26/40
Product Index
26
RDS(ON)max()
VDSS
(V)
ID
(A)
RDS(ON)max()
VDSS
(V)
ID
(A)
600 6 1.25
50 45 0.03
50 50 0.011
250 13 0.25
500 10 1.0
500 2 3.2
600 6 1.25
2SK2545
2SK2550
2SK2551
2SK2598
2SK2599
2SK2601
2SK2602
TO-220FL/SM
-MOSII
-MOSII
-MOSII
-MOSII
2SJ200 TO-3P(N)
TO-3P(N)
180 10 0.83
2SJ201 200 12 0.63
TO-220NIS
TO-220NIS
TO-220NIS
TO-220NIS
TO-220NIS
TO-3P(N)IS
2SJ304 60 14 0.12
60 14 0.122SJ312
2SJ313 180 1 5.0
2SJ334 60 30 0.038 P 21
P 21
P 21
P 21
P 21
P 21
P 21
P 21
P 21
2SJ338 PW-Mold 180 1 5.0
2SJ349 60 20 0.045
TPS
2SJ360 PW-Mold 60 1 0.73
2SJ380 100 12 0.21
0.19
2SJ440 180 9 0.8
L2--MOSIV
L2--MOSIV
L2--MOSIV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
TO-220FL/SM2SJ401 60 20 0.045
2SJ378 60 5
-MOSII
TO-220NIS2SJ464 100 18 0.09 P 21
2SJ315 PW-Mold 60 5 0.25
TO-220FL/SM2SJ402 60 30 0.038
TO-220NIS2SJ407 200 5 1.0 P 22-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
TO-220FL/SM2SJ412 100 16 0.21
0.19TO-220NIS2SJ438 60 5
2SJ619
TO-220NIS 250 6.5 0.8 P 22
P 21
P 21
100 1 1.9
100 1 1.9LSTM
2SJ508
2SJ509
2SJ512
PW-Mini
TO-220NIS P 22250 5 1.25
2SJ516
P 2160 1 0.72SJ507 LSTM
TFP 100 16 0.21
2SJ537 LSTM P 2150 5 0.19
2SJ610 PW-Mold P 22250 2 2.55
2SJ620 TFP 100 18 0.09
2SJ618 TO-3P(N) 180 10 0.37
TO-3P(N)
TO-220AB 1000 4 3.8
1000 8 1.8
2SK1119
2SK1120
-MOSII .5
-MOSII .5
-MOSII .5
-MOSII .5
TO-3P(N) 100 5 3.82SK1359
1000 7 1.8TO-3P(N)IS
TO-3P(N)
TO-3P(L)
100 50 0.032
100 60 0.02
2SK1365
2SK1381
2SK1382
L2--MOSIII
L2--MOSIII
TO-3P(L)
TO-3P(L)
TO-3P(N)
32 0.095300
1000 12 1.0
180 10 0.83
2SK1486
2SK1489
2SK1529
-MOSIII.5
-MOSIII.5
-MOSII
New PW-Mold 60 5 0.172SJ668 P 15
U-MOSIII
-MOSV
-MOSV
U-MOSIII
TPS
TPS
New PW-Mold2
60
200
200
5
2.5
2.5
0.17
2.0
2.0
2SJ669
2SJ676
2SJ680
P 15
P 22
P 22
P 22
P 21
P 21
60 45 0.03
60 25 0.0462SK2232
60 45 0.032SK2233
60 45 0.032SK2266
60 60 0.0112SK2267
700 5 1.72SK2274
0.04660 252SK2311
60 60 0.0112SK2313
100 27 0.0852SK2314
200 8.5 0.42SK2350
60 45 0.0172SK2376
200 5 0.82SK2381
200 15 0.182SK2382
60 36 0.032SK2385
100 20 0.0852SK2391
2SK2398
100 3 0.352SK2201
60 50 0.0172SK2173
180 1 5.02SK2162
100 3 0.352SK2200
5 0.16602SK2229
100 5 0.232SK2399
100 5 0.232SK2400
200 15 0.182SK2401
250 7.5 0.52SK2417
60 50 0.018
180 9 0.8
2SK2445
2SK2467
50 25 0.0462SK2507
250 13 0.252SK2508
500 8 0.85
600 6 1.25
2SK2543
2SK2544
500 8 0.852SK2542
TPS
TO-220NIS
TO-220FL/SM
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-220NIS
TO-3P(N)
TO-220FL/SM
TO-3P(L)
TO-220NIS
TO-220FL/SM
TO-3P(N)
TO-220AB
TO-220NIS
TO-220FL/SM
TO-220NIS
TO-220NIS
TO-220NIS
TO-220NIS
New PW-Mold
TO-3P(N)
PW-Mold
TPS
TPS
New PW-Mold
TPS
TO-220FL/SM
TO-220NIS
TO-3P(N)
TO-3P(N)IS
TO-220NIS
TO-220NIS
TO-220NIS
TO-220AB
TO-220AB
TO-220AB
P 23
P 21
P 21
P 22
P 23
P 23
P 23
P 21
P 21
P 21
P 21
P 21
P 21
P 21
P 21
P 22
P 21
P 22
P 22
P 21
P 21
P 21
P 21
P 21
P 21
P 21
P 21
P 22
P 22
P 21
P 21
P 22
P 23
P 23
P 23
P 24800 3 3.62SK2603
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
L2--MOSV
-MOSII.5
TO-3P(L)
TO-220FL/SM
500
1000
25
4
0.2
3.8
2SK1544
2SK1930
-MOSIII.5
-MOSII.5
180 1 5.02SK2013 TO-220NIS-MOSII
-MOSII
-MOSII
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSIII
P 24800 5 2.22SK2604
8 1.2800 P 242SK2606
TO-3P(N)
TO-3P(N)IS
P 24
P 24
P 24
P 24
P 21
800 9 1.2
900 3 4.3
900 5 2.5
900 9 1.4
50 20 0.046
2SK2607
2SK2608
2SK2610
2SK2611
2SK2614 L2--MOSV
P 241000 8 1.72SK2613
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-220AB
DP
TO-3P(N)-MOSIII
-MOSIII
-MOSIII
-MOSIII
-MOSIII
-MOSIII
-MOSIII
TO-3P(N) 200 12 0.632SK1530 -MOSII
New PW-Mold 200 2.5 2.02SJ567 -MOSV P 22
New PW-Mold2 60 5 0.172SJ681 U-MOSIII P 15
P 24800 5 2.22SK2605 TO-220NIS-MOSIII
Part Number Series Package Page
Main Characteristics
Part Number Series Package Page
Main Characteristics
7/27/2019 Power Mosfets
27/4027
RDS(ON)max()
VDSS
(V)
ID
(A)
RDS(ON)max()
VDSS
(V)
ID
(A)
Part Number Series Package Page
Main Characteristics
Part Number Series Package Page
Main Characteristics
TO-220NIS P 22200 11 0.262SK2965
P 22
P 24
250
900
30
10
0.068
1.25
2SK2967
2SK2968
TO-3P(N)
TO-3P(N)
P 2160 2 0.32SK2615
500 5
500
400
5
5.5
1.5
1.5
1.2
P 23
P 23500 15 0.4
P 24900 5 2.5
P 23
P 23
2SK2661
2SK2662
2SK2679
2SK2698
600 12 0.65 P 232SK2699
P 24900 3 4.32SK2700
2SK2717
L2--MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
P 24
P 24
3 4.3900
900 1 9.0
2SK2719
2SK2733
P 24900 2.5 6.42SK2718
50 50 0.0095 P 212SK2745
50 45 0.02 P 212SK2744
L2--MOSV
L2--MOSV
L2--MOSV
P 24800 7 1.72SK2746
400 5.5 1.2 P 232SK2838
P 23400 10 0.552SK2841
P 23500 12 0.522SK2842
P 23600 10 0.752SK2843
900 8 1.4 P 242SK2847
P 24900 7 2.02SK2749
P 23600 3.5 2.22SK2750
P 23500 8 0.852SK2776
P 21100 27 0.0852SK2789
P 230.27500 202SK2837
200 5 0.8 P 222SK2835
P 23600 2 5.02SK2865
P 23600 2 5.02SK2846
-MOSV
-MOSV
-MOSV P 23600 6 1.252SK2777
P 2160 20 0.0552SK2782
L2--MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
600 10 0.752SK2866 -MOSV
-MOSV
900 1 9.0 P 242SK2845
P 23
150 18 0.122SK2882 P 22
800 3 3.62SK2883 P 24
P 23
500 3 3.22SK2862 -MOSV
P 2150 45 0.022SK2886
800 5 2.22SK2884 P 24
L2--MOSV
TO-220AB P 22250 7.5 0.52SK2914
P 23600 16 0.42SK2915 TO-3P(N)
LSTM 50 5 0.15 P 212SK2989 L2--MOSV
P 23500 5 1.52SK2991 TO-220FL/SM
TO-220FL/SM P 22250 20 0.1052SK2993
TO-220FL/SM P 2150 45 0.032SK3051
PW-Mini P 22200 1 3.52SK2992
P 23500 0.5 182SK2998 LSTM
L2--MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSIII
-MOSV
P 23400 10 0.552SK2949 TO-220FL/SM
P 22200 5 0.82SK2920 New PW-Mold
TO-220NIS P 230.55400 8.52SK2952
P 23600 15 0.42SK2953 TO-3P(N)IS
1 0.7100 P 212SK2963 PW-Mini
LSTM 60 2 0.27 P 212SK2961
LSTM 100 1 0.7 P 212SK2962 L2--MOSV
L2--MOSV
L2--MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
900 8.5 1.25 P 242SK3017 -MOSIII
TO-220NIS P 23600 10 1.02SK2996
P 22250 30 0.0682SK2995 TO-3P(N)IS
TO-3P(N)IS
P 23600 2 5.02SK3067 TO-220NIS-MOSV
TO-3P(N)
TO-3P(N)
50 60 0.0072SK3129 -MOSV
TO-220NIS P 231.55600 62SK3130
P 23
P 22
500
200
50
30
0.095
0.052
2SK3132
2SK3176
TO-3P(L)
P 18500 50 0.112SK3131 TO-3P(L)
TO-220NIS
150 5 0.52SK3205 PW-Mold
700 10 1.0 P 232SK3265
500 0.5 18 P 232SK3302 -MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
PW-Mold
TPS
900 1 20 P 242SK3301 -MOSIII
P 22
P 21
TO-220FL/SM P 23500 12 0.522SK3068 -MOSV
TO-3P(SM) P 23500 20 0.272SK3117
P 23600 3.5 2.22SK3085 TO-220AB
P 23450 10 0.652SK3126 TO-220NIS
-MOSV
-MOSV
-MOSV
2SK2889 P 23600 10 0.75
PW-Mini
TO-3P(N)
TO-220NIS
TO-220NIS
TO-220NIS
TO-220AB
TO-3P(N)
TO-220NIS
TO-3P(N)
TO-220AB
TO-220NIS
TO-3P(N)
TO-3P(N)
TO-3P(N)
TO-220FL/SM
TO-220AB
TO-220NIS
TO-220NIS
TO-3P(N)IS
TO-3P(N)
TO-220NIS
TO-220FL/SM
TO-220FL/SM
TO-3P(N)
TPS
New PW-Mold
TPS
DP
TO-220FL/SM
DP
TO-220AB
TO-220FL/SM
TO-220NIS
TO-220NIS
TO-220NIS
TO-220FL/SM
TO-220FL/SM-MOSV
TO-220NIS 450 10 0.65 P 18
P 18
2SK3310 MACH
-MOSV P 18500 12 0.622SK3313 TO-220NIS
-MOSV 600 6 1.252SK3312 TO-220FL/SM
2SK3314 P 18500 15 0.49TO-3P(N)-MOSV
TO-220FL/SM 450 10 0.65 P 182SK3309 MACH
-MOSIII
-MOSIII
-MOSIII
-MOSIII
U-MOSIII
-MOSIII
-MOSIII
-MOSIII
-MOSIII
-MOSIII
-MOSIII
2SK3316 P 18500 5 1.8TO-220NIS-MOSV
P 23500 14 0.42SK2916 TO-3P(N)IS-MOSV
2SK3342 P 22250 4.5 1.0New PW-Mold-MOSV
P 23500 18 0.272SK2917 TO-3P(N)IS-MOSV
2SK3371 P 23600 1 9.0New PW-Mold-MOSV
2SK3373 500 2 3.2
2SK3374 450 1 4.6
P 23
P 23
P 21
P 22
P 23
250 20 0.1052SK3445
200 25 0.0822SK3444
150 30 0.0552SK3443
2SK3388 250 20 0.105
2SK3387 150 18 0.12
2SK3399 P 18600 10 0.75
2SK3403 P 18450 13 0.4
2SK3407 450 10 0.65
2SK3398 500 12 0.52
P 23
P 23
P 22
P 22
P 22
P 18600 10 1.02SK3437
600 10 1.02SK3438
PW-Mold
TPS
TFP
TFP
TFP
TFP
TFP
TO-220FL/SM
TO-220FL/SM
TO-220NIS
TFP
TO-220FL/SM
TFP
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
MACH
MACH
2SK3417 P 18500 5 1.8TO-220FL/SM-MOSV
-MOSV
MACH
L2--MOSV
7/27/2019 Power Mosfets
28/40
Product Index
28
RDS(ON)max()
VDSS
(V)
ID
(A)
RDS(ON)max()
VDSS
(V)
ID
(A)
Part Number Series Package Page
Main Characteristics
Part Number Series Package Page
Main Characteristics
400 10 0.552SK3499
500 8 0.852SK3538
450 2 2.452SK3543
450 13 0.42SK3544
500 5 1.52SK3466
700 10 1.02SK3453 P 23
30 45 0.022SK3506
2SK3462 P 22250 3 1.7
2SK3471
2SK3472
P 23
P 23
500
450
0.5
1
18
4.6
2SK3561 P 19500 8 0.85
2SK3562 P 19600 6 1.25
2SK3563 P 19500 5 1.5
2SK3497 180 10 0.15
900 9 1.62SK3473 P 19
900 3 4.32SK3564 P 19
900 5 2.52SK3565 P 19
900 2.5 6.42SK3566 P 19
600 3.5 2.22SK3567 P 19
500 12 0.522SK3568 P 19
P 21
P 23
P 22
P 23
P 23
P 23
P 23
LSTM 150 0.67 1.72SK3670 -MOSV P 22
P 19
P 19
P 18
P 18
0.3
0.25
1.7800 6.52SK3880 -MOSIV
P 190.26TO-3P(N) 450 192SK3904 -MOSVI
P 190.44TO-3P(N)
TO-3P(N)IS
600 142SK3903 -MOSVI
0.31TO-3P(N) 500 172SK3905 -MOSVI
P 180.33TO-3P(N) 600 202SK3906 -MOSV
0.23TO-3P(N) 500 232SK3907 MACH
0.32TO-3P(N) 600 202SK3911 MACH
TO-220SIS 500 152SK3934 -MOSVI P 19
TO-220SIS 450 172SK3935 -MOSVI P 19
0.25TO-3P(N) 500 232SK3936 -MOSV P 18
0.007TO-3P(N) 75 702SK3940 U-MOSIII P 15
1.4TO-220NIS 600 62SK3947 -MOSV P 18
0.105TO-220NIS 250 202SK3994 -MOSV P 22
2.2New PW-Mold 600 32SK3975 -MOSV P 23
0.4TO-220SIS 500 132SK4012 -MOSVI P 19
1.7TO-220SIS 800 62SK4013 -MOSIV P 19
2.0TO-220SIS 900 62SK4014 -MOSIV P 19
600
200
10
25
0.75
0.082
2SK3569
2SK3625
P 19
P 22
800 7 1.72SK3633 P 19
600 7.5 1.02SK3667 P 19
60 35 0.01252SK3662 P 15
TO-220NIS
TFP
TFP
TFP
TFP
TO-3P(N)IS
TO-3P(N)
TO-3P(N)
TO-3P(N)
New PW-Mold
New PW-Mold
PW-Mini
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
TO-220SIS
P 15
-MOSVI
-MOSVI
-MOSVI
-MOSIV TO-220SIS 900 4 3.52SK3798
-MOSIV TO-220SIS 900 8 1.32SK3799 P 19
TO-220NIS 450
30
13
5
0.6
0.089
2SK3743
2SK3754
P 18
P 15
MACH
TO-220NIS
TO-220SIS 500 52SK3868 -MOSV
P 19
P 19
P 19
TFP 60 75 0.00582SK3842
P 15TFP 40 75 0.00352SK3843
P 1540 26 0.0182SK3846
TO-220SM
DP
P 15
P 19
U-MOSIII
-MOSVI
U-MOSIII
U-MOSIII
P 15TO-220NIS
TO-220NIS
60 45 0.00582SK3844 U-MOSIII
P 15TO-3P(N) 60 70 0.00582SK3845 U-MOSIII
U-MOSIII
U-MOSIII
0.68
1.7 P 18
40
500
26
5
0.018
1.5
2SK3847
2SK3863
P 19TO-220SIS 450 2 2.45
2.45
2SK3757
P 19TO-220SIS 450 22SK3766
P 19TO-220SIS 600 2 4.52SK3767
-MOSVI P 19TO-220SIS 600 13 0.432SK3797
TO-220SIS 450 102SK3869 -MOSVI P 19
1.3
1.7
TO-220 3P(N) 900
800
9
6.5
2SK3878
2SK3879
-MOSIV
-MOSIV TO-220FL/SM
TO-220SIS
TO-220FL/SM
TO-3P(N)
TO-220SIS
TO-220NIS
PW-Mold 100 10 0.1252SK3669 P 17
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSV
-MOSVI
-MOSV
-MOSV
-MOSV
-MOSIV
-MOSVI
-MOSVI
-MOSVI
-MOSIV
-MOSIV
-MOSIV
-MOSVI
-MOSVI
-MOSVI
-MOSV
U-MOSIII
-MOSIV
-MOSVI
-MOSVII
5
2.2
600
600
2
3
2SK4002
2SK4003
P 23
P 23
-MOSV
-MOSV
New PW-Mold2
New PW-Mold2
2.5TO-3P(N) 900 52SK3700 P 19-MOSIV
P 8
P 8
P 8
P 8
P 8
P 8
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
VS-6
VS-6
VS-6
VS-6
VS-6
VS-6
SOP-8
30
30
20
5.5
5.5
2.7
1.8
6
6
6
0.024
0.024
0.028
0.035
0.04
0.11
0.4
TPC6003
TPC6004
TPC6005
P 13
12
20
20
200
U-MOSIII
U-MOSIII
U-MOSIII
-MOSV
TPC6103
TPC6104
TPC6105
P 8VS-6 4.5 0.05520U-MOSIVTPC6107
TPC8012-H
0.1
0.35
0.23
0.8
1
1.7
9
60
100
100
200
250
250
600
5
3
5
5
4.5
3
1
2SK4017
2SK4018
2SK4019
2SK4020
2SK4021
2SK4022
2SK4026
0.86TO-220SIS 600 102SK4015 -MOSV P 18
0.5TO-220SIS 600 132SK4016 -MOSV P 18
P 15
P 21
P 21
P 22
P 22
P 22
P 23
-MOSV
-MOSV
-MOSV
-MOSV
L2--MOSV
L2--MOSV
SOP-8 11 0.014 P 1330U-MOSIIITPC8014
SOP-8 15 0.0066 P 1330TPC8017-HUltra-high-speed
U-MOSIII
18
11
0.0046
0.017
P 13
P 13
30
30
TPC8018-H
13 0.009 P 1330TPC8020-H
TPC8021-H
Ultra-high-speedU-MOSIII
Ultra-high-speedU-MOSIII
Ultra-high-speedU-MOSIII
SOP-8
SOP-8
SOP-8
SOP-8 7.5 0.027 P 1340TPC8022-HUltra-high-speed
U-MOSIII
New PW-Mold2
U-MOSIII 0.160 52SK4033 P 15New PW-Mold
U-MOSIII 0.005860 752SK4034 P 15TFP
-MOSV 0.97500 82SK4042 P 18TO-220SIS
New PW-Mold2
New PW-Mold2
New PW-Mold2
New PW-Mold2
New PW-Mold2
4.6450 12SK4023 P 23-MOSV New PW-Mold2
New PW-Mold2
P 8VS-6 4.5 0.0630U-MOSIVTPC6108
VS-6 2.5 0.09530TPC6201 U-MOSII
TO-220SIS 900 5 2.52SK3742 P 19-MOSIV
7/27/2019 Power Mosfets
29/4029
RDS(ON)max()
VDSS
(V)
ID
(A)
RDS(ON)max()
VDSS
(V)
ID
(A)
Part Number Series Package Page
Main Characteristics
Part Number Series Package Page
Main Characteristics
P 8
P 8
P 8
P 8
P 8
P 8
P 8
P 8
P 8
P 8
P 8
P 8
P 8
P 8
P 8
P 8
P 8
P 8
P 8
P 8
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIV
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIV/U-MOSIII
VS-8 20 2.7TPCF8301
VS-8 20 3TPCF8302
VS-8 20 3TPCF8303
U-MOSIV VS-8 30 3.2TPCF8304
VS-8 30/30 3.2/4TPCF8402
VS-8 20 3TPCF8A01
VS-8 20
20
20
20
2.7
5.6
5
5
TPCF8B01
PS-8 30 7.2TPCP8001-H
U-MOSIV PS-8
PS-8
20 9.1TPCP8002
TPCP8101
PS-8
PS-8
PS-8
PS-8
30
30
4.2
5.5
TPCP8201
TPCP8202
TPCP8301
TPCP8302
PS-8 30/30 3.4/4.2TPCP8401
PS-8
PS-8
12/20
40/40
5.5/0.1
3.4/4.7
TPCP8402
TPCP8403
PS-8 32/50 6/0.1TPCP8J01
VS-8 30 6TPCF8104
VS-8 20 3TPCF8201
U-MOSIV
-MOSVI
U-MOSIV
U-MOSIV
0.11
0.059
0.058
0.072
0.072/0.05
0.049
0.11
0.016
0.01
0.030
0.05
0.023
0.031
0.033
0.048/0.072
0.170/0.040
0.038/3
0.035
P 16TO-220(W) 60 70TK70D06J1 0.0064
0.028
0.049
Ultra-high-speedU-MOSIII
Ultra-high-speedU-MOSIII
P 19TO-3P(W) 500 15TK15H50C 0.4
-MOSVI P 19TO-3P(W) 500 19TK19H50C 0.3
-MOSVI P 19TO-3P(W) 500 20TK20H50C 0.27
-MOSVI P 19TO-3P(W) 600 16TK16H60C 0.4
-MOSIV P 19TO-3P(W) 900 7TK07H90A 2.0
-MOSIV P 19TO-3P(W) 900 9TK09H90A 1.3
13
10
0.0007
0.02
P 13
P 13
30
30
U-MOSIII
U-MOSIII
TPC8107
TPC8109
SOP-8
SOP-8
0.025
0.012
0.006
0.0045
P 13
P 13
P 13
P 13
30
30
30
Ultra-high-speedU-MOSIII
Ultra-high-speedU-MOSIII
Ultra-high-speedU-MOSIII
Ultra-high-speedU-MOSIII
Ultra-high-speedU-MOSIII
U-MOSIII 40 8
11
13
18
U-MOSIV
U-MOSIV
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIII
U-MOSIV/U-MOSIII 0.033/0.026
TPC8208 P 1320 5