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Microwave SemiconductorsProduct Guide 2017
S and C-band Internally Matched Power GaAs FETs/GaN HEMTs .....4
X and Ku-band Internally Matched Power GaAs FETs/GaN HEMTs ...5
▼ GaN HEMTs and Amplifier ● C, X and Ku-band Internally Matched Power GaN HEMTs .................6, 7 ● X-band Power GaN Amplifier ...................................................................6
▼ GaAs FETs ● C-band Internally Matched Power GaAs FETs.....................8, 9, 10, 11 ● X and Ku-band Internally Matched Power GaAs FETs....12, 13, 14, 15
C O N T E N T S
Output Power vs. Frequency Map
Specifications Table
Package Code and Outlines .......................................16, 17,18
32
S and C-band Internally Matched Power GaAs FETs/GaN HEMTs .....4
X and Ku-band Internally Matched Power GaAs FETs/GaN HEMTs ...5
▼ GaN HEMTs and Amplifier ● C, X and Ku-band Internally Matched Power GaN HEMTs .................6, 7 ● X-band Power GaN Amplifier ...................................................................6
▼ GaAs FETs ● C-band Internally Matched Power GaAs FETs.....................8, 9, 10, 11 ● X and Ku-band Internally Matched Power GaAs FETs....12, 13, 14, 15
C O N T E N T S
Output Power vs. Frequency Map
Specifications Table
Package Code and Outlines .......................................16, 17,18
32
Output Power vs. Frequency Map MICROWAVE SEMICONDUCTORS
TIM5967-15UL
X and Ku-band Internally Matched Power GaAs FETs/GaN HEMTs Pout vs. Frequency Map
❋: Pout
2 3 4 5 6 7 8 9
48
50
52
46
44
42
40
38
36
40
60
80
100
160
20
10
5
Out
put P
ower
at 1
dB G
ain
Com
pres
sion
(W)
Out
put P
ower
at 1
dB G
ain
Com
pres
sion
(dBm
)
Frequency (GHz)
S and C-band Internally Matched Power GaAs FETs/GaN HEMTsPout vs. Frequency Map
TIM5964-60SL
TIM7785-60ULA
TGI7785-120L❋TGI5964-120L❋
TGI7785-130LH❋TGI5867-130LH❋
TIM7179-60SLTIM6472-60SL
TIM4450-60SL
TIM7785-30UL
TIM7785-25UTGI7785-25L❋TGI5867-25L❋ TIM6472-25ULTIM4450-25ULTIM3742-25UL
TIM7179-25UL
TIM5964-30UL
TIM3742-45SL-341 TIM5359-45SLTIM4450-45SL
TIM5867-30UL
TIM5964-45SL
TIM7785-45SL
TIM6472-35SL
TIM6472-30UL
TIM5964-25UL
TIM7179-30UL
TIM7785-35SL
TGI7785-60LH❋TGI5867-60LH❋
TGI5867-50L❋
TIM7179-45SLTIM6472-45SL
TIM5964-35SLA-422
TIM5359-60SL
TIM4450-35SL TIM5359-35SL
TIM5359-16UL
TIM5359-8UL
TIM5964-4UL
TIM5359-4UL
TIM3742-30SL-341
TIM7179-16ULTIM7179-16EL
TIM7785-16ULTIM7785-16EL
TIM5964-16ELTIM5964-16UL
TIM6472-16UL
TIM5359-16EL
TIM5964-35SLA
TIM5964-60SL-422
TIM5964-12UL
TIM5964-8UL
TIM7179-8ULTIM6472-8ULTIM5867-8UL
TIM7179-12UL
TIM7785-12UL
TIM6472-12ULTIM4450-12UL
TIM3742-12UL
TIM4450-16UL
TIM5964-16SL-422
TIM4450-8UL
TIM3742-4SL-341TIM3742-4UL TIM4450-4UL
TIM7785-6UL
TIM7785-8UL
TIM7179-6UL
TIM5964-4SL-422 TIM7785-4UL
TIM6472-4UL
TIM7179-4UL
TIM6472-16EL
Out
put P
ower
at 1
dB G
ain
Com
pres
sion
(W)
Out
put P
ower
at 1
dB G
ain
Com
pres
sion
(dBm
)
Frequency (GHz) ❋: Pout
44
45
47
50
42
40
38
36
32
34
10
5
28 10 12 14 16
20
30
40
50
100
TIM1414-7
TIM1414-7-252
TIM1414-15L
TIM1414-18LTIM1112-15L
TIM0910-15L
TIM8596-15
TIM1011-15L
TIM1213-18L
TIM1213-15LTIM1414-18L-252
TIM1314-15UL
TIM1414-2LTIM1213-2L
TIM8596-2 TIM0910-2
TIM8996-30
TIM0910-30LTIM1213-30L TIM1314-30L
TIM1414-5L
TIM8596-4 TIM1414-4LATIM1213-4L
TIM1314-4ULTIM1011-4L
TIM0910-5
TIM0910-4
TIM1112-4
TIM1011-5L
TIM1414-4-252
TIM1112-4UL
TIM1414-4UL
TIM1011-4UL
TIM8596-8TIM1213-8L
TIM1213-8ULATIM1213-8UL
TIM0910-8TIM1112-8
TIM1213-10L
TIM1414-9L
TIM1414-8L
TIM1414-8-252
TIM1314-9L
TIM1011-8LTIM1011-8UL
TIM1011-8ULA
TGI8596-50❋ TGI1414-50L❋TGI1314-50L❋TGI0910-50❋
TGI9098-100P❋
TGI1213-50L❋
TGI1314-25L❋
TGI1213-25L❋
TGI5059-120L❋NEWNEW
TGM9398-25❋
TIM1314-8UL
TGI7785-50L❋
NEWNEW NEWNEW
54
Output Power vs. Frequency Map MICROWAVE SEMICONDUCTORS
TIM5967-15UL
X and Ku-band Internally Matched Power GaAs FETs/GaN HEMTs Pout vs. Frequency Map
❋: Pout
2 3 4 5 6 7 8 9
48
50
52
46
44
42
40
38
36
40
60
80
100
160
20
10
5
Out
put P
ower
at 1
dB G
ain
Com
pres
sion
(W)
Out
put P
ower
at 1
dB G
ain
Com
pres
sion
(dBm
)
Frequency (GHz)
S and C-band Internally Matched Power GaAs FETs/GaN HEMTsPout vs. Frequency Map
TIM5964-60SL
TIM7785-60ULA
TGI7785-120L❋TGI5964-120L❋
TGI7785-130LH❋TGI5867-130LH❋
TIM7179-60SLTIM6472-60SL
TIM4450-60SL
TIM7785-30UL
TIM7785-25UTGI7785-25L❋TGI5867-25L❋ TIM6472-25ULTIM4450-25ULTIM3742-25UL
TIM7179-25UL
TIM5964-30UL
TIM3742-45SL-341 TIM5359-45SLTIM4450-45SL
TIM5867-30UL
TIM5964-45SL
TIM7785-45SL
TIM6472-35SL
TIM6472-30UL
TIM5964-25UL
TIM7179-30UL
TIM7785-35SL
TGI7785-60LH❋TGI5867-60LH❋
TGI5867-50L❋
TIM7179-45SLTIM6472-45SL
TIM5964-35SLA-422
TIM5359-60SL
TIM4450-35SL TIM5359-35SL
TIM5359-16UL
TIM5359-8UL
TIM5964-4UL
TIM5359-4UL
TIM3742-30SL-341
TIM7179-16ULTIM7179-16EL
TIM7785-16ULTIM7785-16EL
TIM5964-16ELTIM5964-16UL
TIM6472-16UL
TIM5359-16EL
TIM5964-35SLA
TIM5964-60SL-422
TIM5964-12UL
TIM5964-8UL
TIM7179-8ULTIM6472-8ULTIM5867-8UL
TIM7179-12UL
TIM7785-12UL
TIM6472-12ULTIM4450-12UL
TIM3742-12UL
TIM4450-16UL
TIM5964-16SL-422
TIM4450-8UL
TIM3742-4SL-341TIM3742-4UL TIM4450-4UL
TIM7785-6UL
TIM7785-8UL
TIM7179-6UL
TIM5964-4SL-422 TIM7785-4UL
TIM6472-4UL
TIM7179-4UL
TIM6472-16EL
Out
put P
ower
at 1
dB G
ain
Com
pres
sion
(W)
Out
put P
ower
at 1
dB G
ain
Com
pres
sion
(dBm
)
Frequency (GHz) ❋: Pout
44
45
47
50
42
40
38
36
32
34
10
5
28 10 12 14 16
20
30
40
50
100
TIM1414-7
TIM1414-7-252
TIM1414-15L
TIM1414-18LTIM1112-15L
TIM0910-15L
TIM8596-15
TIM1011-15L
TIM1213-18L
TIM1213-15LTIM1414-18L-252
TIM1314-15UL
TIM1414-2LTIM1213-2L
TIM8596-2 TIM0910-2
TIM8996-30
TIM0910-30LTIM1213-30L TIM1314-30L
TIM1414-5L
TIM8596-4 TIM1414-4LATIM1213-4L
TIM1314-4ULTIM1011-4L
TIM0910-5
TIM0910-4
TIM1112-4
TIM1011-5L
TIM1414-4-252
TIM1112-4UL
TIM1414-4UL
TIM1011-4UL
TIM8596-8TIM1213-8L
TIM1213-8ULATIM1213-8UL
TIM0910-8TIM1112-8
TIM1213-10L
TIM1414-9L
TIM1414-8L
TIM1414-8-252
TIM1314-9L
TIM1011-8LTIM1011-8UL
TIM1011-8ULA
TGI8596-50❋ TGI1414-50L❋TGI1314-50L❋TGI0910-50❋
TGI9098-100P❋
TGI1213-50L❋
TGI1314-25L❋
TGI1213-25L❋
TGI5059-120L❋NEWNEW
TGM9398-25❋
TIM1314-8UL
TGI7785-50L❋
NEWNEW NEWNEW
54
Specifications Table MICROWAVE SEMICONDUCTORS
■ GaN HEMTs and Amplifier
7-AA06A 7-AA04A / 7-AA07A
505050
15.022.515.0
140.0280.0140.0
250250250
1.6/1.4– /0.8
1.6/1.4
– 10– 10– 10
– 4.0– 4.0– 4.0
7-AA04A7-AA03A7-AA04A
234623
MAX.MIN. TYP. MIN. TYP. TYP. TYP.MAX.
C-band Internally Matched Power GaN HEMTs
FREQUENCYBAND(GHz)
MODEL No.IDS(A)
(@Pin = 41.0 dBm)
Pout(dBm)
(@Pin = 41.0 dBm)
GL(dB)
(@Pin = 20.0 dBm)
ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (TYP.)
VDS
(V)VGS
(V)IDS
(A)Tch(°C)
PT
(W)(Tc = 25 °C)
Rth(C-C)
MAX./TYP.(°C/W)
VGSoff
(V) IDS(mA)@VDS = 5 V
PACKAGECODE
RF PERFORMANCE SPECIFICATIONS
✽ : ▲Tch = Channel Temperature Rise, Formula: ▲Tch = (VDS × IDS + Pin – Pout) × Rth(C-C), ★PULSE OPERATION: PULSE WIDTH: 100μs, Duty:10%■ : Pin = 35.0 dBm, ● : Pin = 42.0 dBm
X-band Internally Matched Power GaN HEMTs
8.5-9.69.0-9.89.5-10.5
TGI8596-50 TGI9098-100P ★ TGI0910-50
46.049.0 ●46.0
47.050.0 ●47.0
7.0—7.0
9.0 12.0 ■
9.0
5.0 10.0 ●
5.0
6.013.0 ●
6.0
314031
150—
150
(Ta = 25 °C)
MIN. TYP. MIN. TYP. TYP. TYP.MAX. MIN.
FREQUENCYBAND(GHz)
MODEL No.IDS
(A) Po@singlecarrier level
(dBm)
Pout
(dBm)
GL(dB)
(@Pin = 20.0 dBm)
ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (TYP.)
VDS
(V)VGS
(V)IDS
(A)Tch(°C)
PT
(W)(Tc = 25 °C)
Rth(C-C)
MAX./TYP.(°C/W)
VGSoff
(V) IDS(mA)@VDS = 5 V
PACKAGECODE
RF PERFORMANCE SPECIFICATIONS
✽ : ▲Tch = Channel Temperature Rise, Formula: ▲Tch = (VDS × IDS + Pin – Pout) × Rth(C-C), ✽✽ : Gain Flatness■ : Pin = 39.0 dBm, ● : Pin = 42.0 dBm
Ku-band Internally Matched Power GaN HEMTs
MAX.
(Ta = 25 °C)
IM3
(dBc)
add
(%)η
TYP.MAX.
add
(%)η
Tch✽
(°C)
MAX.MIN. TYP. MIN. TYP. TYP. TYP.MAX.
FREQUENCYBAND(GHz)
MODEL No.Pout
(dBm)GL
(dB)(@Pin = 20.0 dBm)
ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (TYP.)
VDS
(V)VGS
(V)IDS
(A)Tch(°C)
PT
(W)(Tc = 25 °C)
Rth(C-C)
MAX./TYP.(°C/W)
VGSoff
(V) IDS(mA)@VDS = 5 V
PACKAGECODE
RF PERFORMANCE SPECIFICATIONS
✽ : ▲Tch = Channel Temperature Rise, Formula: ▲Tch = (VDS × IDS + Pin – Pout) × Rth(C-C), ✽✽ : Gain Flatness ✽✽✽ : ▲Tch is calculated using the same condition as IM3 test■ : Pin = 35.0 dBm, ● : Pin = 40.0 dBm, ★ : Pin = 41.0 dBm, ▼ : Pin = 42.0 dBm, ◆ : Pin = 43.0 dBm, ▲ : Pin = 44.0 dBm
BIAS CONDITIONS
BIAS CONDITIONS
BIAS CONDITIONS (Ta = 25 °C)
TYP.MIN.
Po@singlecarrier level
(dBm)MAX.
G✽✽
(dB) Tch✽
(°C)
VDS(V)
IDSset(A)
5050505050
7.515.07.5
15.015.0
70.0140.070.0
140.0140.0
250250250250250
3.2/2.81.6/1.43.2/2.81.6/1.41.6/1.4
– 10– 10– 10– 10– 10
– 4.0– 4.0– 4.0– 4.0– 4.0
7-AA07A7-AA07A7-AA07A7-AA07A7-AA04A
11.523
11.52323
12.7-13.2
13.75-14.5
14.0-14.5
TGI1213-25LTGI1213-50LTGI1314-25LTGI1314-50LTGI1414-50L
43.0 ■46.0 ●43.0 ■46.0 ●46.0 ●
44.0 ■47.0 ●44.0 ■47.0 ●47.0 ●
7.07.07.07.07.0
8.08.08.08.08.0
2.5 ■5.0 ●2.5 ■5.0 ●5.0 ●
3.0 ■6.0 ●3.0 ■6.0 ●6.0 ●
—————
37.040.037.040.040.0
140160140160150
– 25– 25– 25– 25– 25
2931293131
±0.8±0.8±0.8±0.8±0.8
2424242424
1.02.01.02.02.0
VDS
(V)IDSset
(A)
242424
1.56.01.5
VDS
(V)IDSset
(A)
±0.8±0.8±0.8±0.8±0.8±0.8±0.8±0.8±0.8±0.8±0.8
5050505050505050505050
18.07.5
15.06.0
12.018.07.5
15.06.0
18.012.0
280.070.0
140.0111.0200.0280.070.0
140.0111.0280.0200.0
250250250225225250250250225250225
0.8/0.63.2/2.81.6/1.41.8/1.61.0/0.80.8/0.63.2/2.81.6/1.41.8/1.60.8/0.61.0/0.8
– 10– 10– 10– 10– 10– 10– 10– 10– 10– 10– 10
– 4.0– 4.0– 4.0– 3.0– 3.0– 4.0– 4.0– 4.0– 3.0– 4.0– 3.0
7-AA06A7-AA04A7-AA04A7-AA04A7-AA06A7-AA06A7-AA04A7-AA04A7-AA04A7-AA06A7-AA06A
4612231530461223154630
5.0-5.9
5.85-6.75
5.9-6.4
7.7-8.5
TGI5059-120LTGI5867-25LTGI5867-50LTGI5867-60LHTGI5867-130LHTGI5964-120LTGI7785-25LTGI7785-50LTGI7785-60LHTGI7785-120LTGI7785-130LH
50.0 ▼44.0 ■46.0 ●47.0 ●50.0 ◆50.0 ◆44.0 ■46.0 ●47.0 ★50.0 ▲50.0 ▲
51.0 ▼44.5 ■47.0 ●48.0 ●51.0 ◆51.0 ◆44.5 ■47.0 ●48.0 ★51.0 ▲51.0 ▲
2424244040242424402440
4.01.753.00.40.84.01.753.00.44.00.8
12.512.512.511.511.512.511.010.010.510.010.5
13.513.513.512.512.513.512.011.011.511.011.5
11.0 ▼2.7 ■5.4 ●3.5 ●7.0 ◆
10.0 ◆2.7 ■5.0 ●4.0 ★
10.0 ▲7.0 ▲
12.0 ▼3.2 ■6.3 ●4.5 ●9.0 ◆
12.0 ◆3.2 ■6.3 ●4.5 ★
12.0 ▲9.0 ▲
4039333838423933324236
140150150140✽✽✽
140✽✽✽
140150150140✽✽✽
140140✽✽✽
– 27– 42– 42– 30– 30– 30– 42—
– 30– 30– 30
– 25– 40– 40– 25– 25– 25– 40– 40– 25– 25– 25
44.029.032.041.044.044.029.032.041.044.044.0
X-band Power GaN Amplifier
*: Pin=23.0dBm, **: IDD=IDD1+IDD2
TfPACKAGE
CODE
(Ta = 25 °C)
MIN. TYP. MIN. TYP. TYP. MAX.
FREQUENCYBAND(GHz)
MODEL No.IDD* , **
(A)Pout*
(dBm)GL(dB)
(@Pin = 7.0 dBm)
ABSOLUTE MAXIMUM RATINGS
VDD 1, 2(V)
VGG 1, 2(V) Pin
RF PERFORMANCE SPECIFICATIONS
9.3-9.8TYP.
add
(%)η
BIAS CONDITIONS
50 27.0 –40 to + 90˚C– 10 7-BA42B43.0 44.0 20.0 24.0 2.6 3.5 3824 1.2
VDD 1, 2(V)
IDDset **(A)
TGM9398-25
IDS
(A)IM3
(dBc) add
(%)η Tch✽
(°C) G✽✽
(dB)
76
Specifications Table MICROWAVE SEMICONDUCTORS
2-16G1B2-11D1B
C-band Internally Matched Power GaAs FETs (1/2)
FREQUENCYBAND(GHz)
PACKAGECODE
MODEL No.
MIN. TYP. MIN. TYP. MIN. TYP.TYP. TYP.MAX. MAX.
P1dB
(dBm)IDS
(A)G1dB
(dB) VDS
(V)VGS
(V)IDS
(A)Tch(°C)
VGSoff
(V)
PT
(W)(Tc = 25 °C)
Rth(C-C)
MAX./TYP.(°C/W)
ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (TYP.)
(Ta = 25 °C)
Po@singlecarrier level
(dBm)
RF PERFORMANCE SPECIFICATIONSBIAS CONDITIONS
TIM3742-4SL-341TIM3742-30SL-341TIM3742-45SL-341TIM3742-4ULTIM3742-8ULTIM3742-12ULTIM3742-25ULTIM3742-35SLTIM4450-4ULTIM4450-8ULTIM4450-12ULTIM4450-16ULTIM4450-25ULTIM4450-35SLTIM4450-45SLTIM4450-60SL
3.7-4.2
3.3-3.6
4.4-5.0
35.5
44.0
46.0
35.5
38.5
40.5
43.5
45.0
35.5
38.5
40.5
41.5
43.5
45.0
46.0
47.0
36.5
45.0
46.5
36.5
39.5
41.5
44.5
45.5
36.5
39.5
41.5
42.5
44.5
45.5
46.5
48.0
1.1
7.0
9.6
1.1
2.2
3.2
6.8
8.0
1.1
2.2
3.2
4.4
6.8
8.0
9.6
13.2
37
42
43
38
37
41
38
40
37
37
40
36
37
39
41
42
1.3
8.0
10.8
1.3
2.6
3.8
7.6
9.0
1.3
2.6
3.8
5.0
7.6
9.0
10.8
15.0
25.5
34.5
35.5
25.5
28.5
30.5
33.5
35.0
25.5
28.5
30.5
31.5
33.5
35.0
35.5
36.5
MAX.
80
100
100
80
80
80
80
100
80
80
80
80
80
100
100
100
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
3.5
20.0
20.0
3.5
7.0
10.0
20.0
20.0
3.5
7.0
10.0
14.0
20.0
20.0
20.0
20.0
– 2.5
– 2.5
– 2.5
– 2.5
– 2.5
– 2.5
– 2.5
– 2.5
– 2.5
– 2.5
– 2.5
– 2.5
– 2.5
– 2.5
– 2.5
– 1.8
15
100
170
15
30
40
80
140
15
30
40
60
80
140
170
200
2-11D1B
2-16G1B
2-16G1B
2-11D1B
2-11D1B
2-16G1B
2-16G1B
2-16G1B
2-11D1B
2-11D1B
2-16G1B
2-16G1B
2-16G1B
2-16G1B
2-16G1B
2-16G1B
6.5/4.5
1.3/1.0
1.2/0.8
6.0/4.5
3.5/2.5
2.4/2.0
1.5/1.2
1.3/1.0
6.0/4.5
3.5/2.5
2.4/2.0
1.8/1.5
1.5/1.2
1.3/1.0
1.2/0.8
0.8/0.6
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
23.1
115.4
125.0
25.0
42.9
62.5
100.0
115.4
25.0
42.9
62.5
83.3
100.0
115.4
125.0
187.5
±0.6
±0.8
±0.8
±0.6
±0.6
±0.6
±0.6
±0.8
±0.6
±0.6
±0.6
±0.6
±0.6
±0.8
±0.8
±0.8
11.0
11.0
11.0
12.0
11.0
11.5
10.5
10.0
11.0
10.5
10.5
10.0
10.0
9.5
9.5
9.5
– 42
– 42
– 42
– 44
– 44
– 44
– 44
– 42
– 44
– 44
– 44
– 44
– 44
– 42
– 42
– 42
– 45
– 45
– 45
– 47
– 47
– 47
– 47
– 45
– 47
– 47
– 47
– 47
– 47
– 45
– 45
– 45
10.0
10.0
10.0
11.0
10.0
10.5
9.5
9.0
10.0
9.5
9.5
9.0
9.0
8.5
8.5
8.5
IDS(mA)@VDS = 3 V
add
(%)η IM3
(dBc) G✽✽
(dB) Tch✽
(°C)VDS(V)
IDSset(A)
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
1.1
7.0
9.0
0.9
1.8
2.6
5.2
8.0
0.9
1.8
2.6
3.6
5.2
8.0
9.0
9.5
5.85-6.75
5.9-6.4
25.5
28.5
31.5
30.5
35.0
35.5
36.5
25.5
28.5
30.5
31.5
30.5
33.5
34.0
35.0
35.5
36.5
25.5
28.5
31.0
31.5
34.0
35.0
36.5
80
80
80
80
100
100
100
80
80
80
80
80
80
100
100
100
100
80
80
80
80
100
100
100
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
3.5
7.0
14.0
14.0
20.0
20.0
20.0
3.5
7.0
10.0
14.0
14.0
20.0
18.0
20.0
20.0
20.0
3.5
7.0
12.0
14.0
18.0
20.0
20.0
– 2.5
– 2.5
– 2.5
– 1.9
– 2.5
– 2.5
– 1.8
– 2.5
– 2.5
– 2.5
– 2.5
– 1.9
– 2.5
– 2.0
– 2.5
– 2.5
– 1.8
– 2.5
– 2.5
– 2.0
– 2.5
– 2.0
– 2.5
– 1.8
15
30
60
40
140
170
200
15
30
40
60
40
80
80
140
170
200
15
30
40
60
80
140
200
2-11D1B
2-11D1B
2-16G1B
7-AA05A
2-16G1B
2-16G1B
2-16G1B
2-11D1B
2-11D1B
2-16G1B
2-16G1B
7-AA05A
2-16G1B
7-AA05A
2-16G1B
2-16G1B
2-16G1B
2-11D1B
2-11D1B
2-16G1B
2-16G1B
7-AA05A
2-16G1B
2-16G1B
6.0/4.5
3.5/2.5
1.8/1.05
1.8/1.5
1.3/1.0
1.2/0.8
0.8/0.6
6.0/4.5
3.5/2.5
2.4/2.0
1.8/1.5
1.8/1.5
1.5/1.2
1.5/1.0
1.3/1.0
1.2/0.8
0.8/0.6
6.5/4.5
3.5/2.5
2.4/2.0
2.0/1.5
1.5/1.0
1.3/1.0
0.8/0.6
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
25.0
42.9
83.3
83.3
115.4
125.0
187.5
25.0
42.9
62.5
83.3
83.3
100.0
100.0
115.4
125.0
187.5
23.1
42.9
62.5
75.0
100.0
115.4
187.5
– 44
– 44
– 44
– 40
– 42
– 42
– 42
– 44
– 44
– 44
– 44
– 40
– 44
– 44
– 42
– 42
– 42
– 42
– 44
– 42
– 42
– 44
– 42
– 40
– 47
– 47
– 47
− 45
– 45
– 45
– 45
– 47
– 47
– 47
– 47
– 45
– 47
– 47
– 45
– 45
– 45
– 45
– 47
– 47
– 45
– 47
– 45
– 45
✽ : ▲Tch = Channel Temperature Rise, Formula: ▲Tch = (VDS × IDS + Pin – P1dB) × Rth(C-C), ✽✽ : Gain Flatness
TIM5359-4ULTIM5359-8ULTIM5359-16ULTIM5359-16ELTIM5359-35SLTIM5359-45SLTIM5359-60SLTIM5964-4ULTIM5964-8ULTIM5964-12ULTIM5964-16ULTIM5964-16ELTIM5964-25ULTIM5964-30ULTIM5964-35SLATIM5964-45SLTIM5964-60SLTIM5964-4SL-422TIM5867-8ULTIM5867-15ULTIM5964-16SL-422TIM5867-30ULTIM5964-35SLA-422TIM5964-60SL-422
5.3-5.9
1.1
2.2
4.4
4.4
8.0
9.6
13.2
1.1
2.2
3.2
4.4
4.4
6.8
7.0
8.0
9.6
13.2
1.1
2.2
3.5
4.4
7.0
8.0
13.2
37
36
36
38
38
41
42
37
36
40
36
38
37
41
39
41
41
35
36
41
35
41
39
40
1.3
2.6
5.0
5.0
9.0
10.8
15.0
1.3
2.6
3.8
5.0
5.0
7.6
8.0
9.0
10.8
15.0
1.3
2.6
4.0
5.0
8.0
9.0
15.0
±0.6
±0.6
±0.6
±0.8
±0.8
±0.8
±0.8
±0.6
±0.6
±0.6
±0.6
±0.8
±0.6
±0.6
±0.8
±0.8
±0.8
±0.6
±0.8
±0.8
±0.8
±0.8
±0.8
±0.8
35.5
38.5
41.5
41.5
45.0
46.0
47.0
35.5
38.5
40.5
41.5
41.5
43.5
44.0
45.0
46.0
47.0
35.5
38.5
41.0
41.5
44.0
45.0
47.0
36.5
39.5
42.5
42.5
45.5
46.5
48.0
36.5
39.5
41.5
42.5
42.5
44.5
45.0
45.5
46.5
48.0
36.5
39.5
42.0
42.5
45.0
45.5
48.0
10.5
10.0
10.0
11.5
8.5
9.0
9.0
10.0
10.0
10.0
10.0
11.5
10.0
10.0
9.0
9.0
8.5
9.0
10.0
10.0
9.0
10.0
9.0
8.0
9.5
9.0
9.0
10.5
7.5
8.0
8.0
9.0
9.0
9.0
9.0
10.5
9.0
9.0
8.0
8.0
7.5
8.0
9.0
9.0
8.0
9.0
8.0
7.0
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
0.9
1.8
3.6
2.8
8.0
9.0
9.5
0.9
1.8
2.6
3.6
2.8
5.2
6.4
8.0
9.0
9.5
1.1
1.8
3.2
4.4
6.4
8.0
9.5
7-AA05A 98
Specifications Table MICROWAVE SEMICONDUCTORS
FREQUENCYBAND(GHz)
PACKAGECODE
MODEL No.
MIN. TYP. MIN. TYP. MIN. TYP.TYP. TYP.MAX. MAX.
P1dB
(dBm)IDS
(A)G1dB
(dB) VDS
(V)VGS
(V)IDS
(A)Tch(°C)
VGSoff
(V)
PT
(W)(Tc = 25 °C)
Rth(C-C)
MAX./TYP.(°C/W)
ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (TYP.) (Ta = 25 °C)
Po@singlecarrier level
(dBm)
✽ : ▲Tch = Channel Temperature Rise, Formula: : ▲Tch = (VDS × IDS + Pin – P1dB) × Rth(C-C), ✽✽ : Gain Flatness
C-band Internally Matched Power GaAs FETs (2/2)
IDS(mA)@VDS = 3 V
RF PERFORMANCE SPECIFICATIONSBIAS CONDITIONS
TIM6472-4ULTIM6472-8ULTIM6472-12ULTIM6472-16ULTIM6472-16ELTIM6472-25ULTIM6472-30ULTIM6472-35SLTIM6472-45SLTIM6472-60SLTIM7179-4ULTIM7179-6ULTIM7179-8ULTIM7179-12ULTIM7179-16ULTIM7179-16ELTIM7179-25ULTIM7179-30ULTIM7179-45SLTIM7179-60SLTIM7785-4ULTIM7785-6ULTIM7785-8ULTIM7785-12ULTIM7785-16ULTIM7785-16ELTIM7785-25ULTIM7785-30ULTIM7785-35SLTIM7785-45SLTIM7785-60ULA
35.5
38.5
40.5
41.5
41.5
43.5
44.0
45.0
46.0
47.0
35.5
37.5
38.5
40.5
41.5
41.5
43.5
44.0
46.0
47.0
35.5
37.5
38.5
40.5
41.5
41.5
43.5
44.0
45.0
46.0
47.0
36.5
39.5
41.5
42.5
42.5
44.5
45.0
45.5
46.5
48.0
36.5
38.5
39.5
41.5
42.5
42.5
44.5
45.0
46.5
48.0
36.5
38.5
39.5
41.5
42.5
42.5
44.5
45.0
45.5
46.5
48.0
1.1
2.2
3.2
4.4
4.4
6.8
7.0
8.0
9.6
13.2
1.1
1.6
2.2
3.2
4.4
4.4
6.8
7.0
9.6
13.2
1.1
1.6
2.2
3.2
4.4
4.4
6.8
7.0
8.0
9.6
14.5
36
36
39
36
37
37
40
37
37
39
35
39
35
39
35
37
36
39
36
37
35
38
35
38
35
36
36
39
33
35
36
1.3
2.6
3.8
5.0
5.0
7.6
8.0
9.0
10.8
15.0
1.3
1.9
2.6
3.8
5.0
5.0
7.6
8.0
10.8
15.0
1.3
1.9
2.6
3.8
5.0
5.0
7.6
8.0
9.0
10.8
16.0
25.5
28.5
30.5
31.5
30.5
33.5
34.0
35.0
35.5
36.5
25.5
27.5
28.5
30.5
31.5
30.5
33.5
34.0
35.5
36.5
25.5
27.5
28.5
30.5
31.5
30.5
33.5
34.0
35.0
35.5
41.0
MAX.
80
80
80
80
80
80
100
100
100
100
80
80
80
80
80
80
80
100
100
100
80
80
80
80
80
80
80
100
100
100
100
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
3.5
7.0
10.0
14.0
14.0
20.0
18.0
20.0
20.0
20.0
3.5
5.0
7.0
10.0
14.0
14.0
20.0
18.0
20.0
20.0
3.5
5.0
7.0
10.0
14.0
14.0
20.0
18.0
20.0
20.0
20.0
– 2.5
– 2.5
– 2.5
– 2.5
– 1.9
– 2.5
– 2.0
– 2.5
– 2.5
– 1.8
– 2.5
– 2.5
– 2.5
– 2.5
– 2.5
– 1.9
– 2.5
– 2.0
– 2.5
– 1.8
– 2.5
– 2.5
– 2.5
– 2.5
– 2.5
– 1.9
– 2.5
– 2.0
– 2.5
– 2.5
– 1.8
15
30
40
60
40
80
80
140
170
200
15
20
30
40
60
40
80
80
170
200
15
20
30
40
60
40
80
80
140
170
120
2-11D1B
2-11D1B
2-16G1B
2-16G1B
7-AA05A
2-16G1B
7-AA05A
2-16G1B
2-16G1B
2-16G1B
2-11D1B
2-11D1B
2-11D1B
2-16G1B
2-16G1B
7-AA05A
2-16G1B
7-AA05A
2-16G1B
2-16G1B
2-11D1B
2-11D1B
2-11D1B
2-16G1B
2-16G1B
7-AA05A
2-16G1B
7-AA05A
2-16G1B
2-16G1B
7-AA09A
6.0/4.5
3.5/2.5
2.4/2.0
1.8/1.5
1.8/1.5
1.5/1.2
1.5/1.0
1.3/1.0
1.2/0.8
0.8/0.6
6.0/4.5
4.6/3.8
3.5/2.5
2.4/2.0
1.8/1.5
1.8/1.5
1.5/1.2
1.5/1.0
1.2/0.8
0.8/0.6
6.0/4.5
4.6/3.8
3.5/2.5
2.4/2.0
1.8/1.5
1.8/1.5
1.5/1.2
1.5/1.0
1.3/1.0
1.2/0.8
1.0/0.8
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
25.0
42.9
62.5
83.3
83.3
100.0
100.0
115.4
125.0
187.5
25.0
32.6
42.9
62.5
83.3
83.3
100.0
100.0
125.0
187.5
25.0
32.6
42.9
62.5
83.3
83.3
100.0
100.0
115.4
125.0
150.0
±0.6
±0.6
±0.6
±0.6
±0.8
±0.6
±0.6
±0.8
±0.8
±0.8
±0.6
±0.6
±0.6
±0.6
±0.6
±0.8
±0.6
±0.6
±0.8
±0.8
±0.6
±0.6
±0.6
±0.6
±0.6
±0.8
±0.6
±0.6
±0.8
±0.8
±0.8
9.5
9.5
9.5
9.5
11.0
9.5
9.5
8.0
8.0
7.5
9.0
9.0
9.0
9.0
8.5
10.5
8.5
8.5
6.5
6.5
8.5
8.5
8.5
8.5
8.5
10.0
8.5
8.5
6.0
6.0
7.5
– 44
– 44
– 44
– 44
– 40
– 44
– 44
– 42
– 42
– 42
– 44
– 44
– 44
– 44
– 44
– 40
– 44
– 44
– 42
– 42
– 44
– 44
– 44
– 44
– 44
– 40
– 44
– 44
– 42
– 42
– 25
– 47
– 47
– 47
– 47
– 45
– 47
– 47
– 45
– 45
– 45
– 47
– 47
– 47
– 47
– 47
– 45
– 47
– 47
– 45
– 45
– 47
– 47
– 47
– 47
– 47
– 45
– 47
– 47
– 45
– 45
– 30
8.5
8.5
8.5
8.5
10.0
8.5
8.5
7.0
7.0
6.5
8.0
8.0
8.0
8.0
7.5
9.5
7.5
7.5
5.5
5.5
7.5
7.5
7.5
7.5
7.5
9.0
7.5
7.5
5.0
5.0
6.5
7-AA05A / 7-AA09A2-11D1B 2-16G1B
add
(%)ηη IM3
(dBc) G✽✽
(dB) Tch✽
(°C)VDS(V)
IDSset(A)
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
0.9
1.8
2.6
3.6
2.8
5.2
6.4
8.0
9.0
9.5
0.9
1.3
1.8
2.6
3.6
2.8
5.2
6.4
9.0
9.5
0.9
1.3
1.8
2.6
3.6
2.8
5.2
6.4
8.0
9.0
9.5
6.4-7.2
7.1-7.9
7.7-8.5
1110
Specifications Table MICROWAVE SEMICONDUCTORS
TIM8596-2TIM8596-4TIM8596-8TIM8596-15TIM8996-30TIM0910-2TIM0910-4TIM0910-5TIM0910-8TIM0910-15LTIM0910-30LTIM1011-4LTIM1011-4ULTIM1011-5LTIM1011-8LTIM1011-8ULTIM1011-8ULATIM1011-15LTIM1112-4TIM1112-4ULTIM1112-8TIM1112-15LTIM1213-2LTIM1213-4LTIM1213-8LTIM1213-8ULTIM1213-8ULATIM1213-10LTIM1213-15LTIM1213-18LTIM1213-30L
32.5
35.5
38.5
41.0
44.0
32.5
35.5
37.0
38.5
41.0
44.0
35.5
35.5
37.0
38.5
38.5
38.5
41.0
35.5
35.5
38.5
41.0
32.5
35.5
38.5
38.5
38.5
40.0
41.0
42.0
44.0
33.5
36.5
39.5
42.0
45.0
33.5
36.5
37.5
39.5
42.0
45.0
36.5
36.5
37.5
39.5
39.5
39.5
42.0
36.5
36.5
39.5
42.0
33.5
36.5
39.5
39.5
39.0
40.5
42.0
42.5
45.0
6.5
6.5
5.0
6.0
6.0
6.5
6.5
6.0
5.0
6.0
6.0
6.5
8.5
6.0
5.0
8.0
8.0
6.0
6.5
8.5
4.0
5.0
6.5
6.5
4.0
7.0
7.0
5.0
5.0
5.0
4.5
7.5
7.5
6.0
7.0
7.0
7.5
7.5
7.0
6.0
7.0
7.0
7.5
9.5
7.0
6.0
9.0
9.0
7.0
7.5
9.5
5.0
6.0
7.5
7.5
5.0
8.0
8.0
6.0
6.0
6.0
5.5
0.85
1.7
3.4
4.5
10.0
0.85
1.7
2.0
3.4
4.5
10.0
1.7
1.1
2.0
3.4
2.0
2.0
4.5
1.7
1.1
3.4
4.5
0.85
1.7
3.4
2.0
2.0
4.0
4.5
5.5
10.0
1.1
2.2
4.4
5.5
11.5
1.1
2.2
2.5
4.4
5.5
11.5
2.2
1.6
2.5
4.4
2.5
2.5
5.5
2.2
1.6
4.4
5.5
1.1
2.2
4.4
2.5
2.5
5.0
5.5
6.0
11.0
24
24
22
31
25
24
24
25
22
31
25
24
36
25
22
39
39
31
24
36
20
29
24
24
20
39
38
23
29
28
23
—
—
—
—
—
—
—
—
—
30.0
38.0
25.0
24.0
26.0
28.0
27.0
27.0
30.0
—
24.0
—
30.0
22.0
25.0
28.0
27.0
27.0
29.0
30.0
36.0
38.0
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
2.6
5.2
10.4
11.5
20.0
2.6
5.2
5.7
10.4
11.5
20.0
5.2
3.3
5.7
10.4
5.7
5.7
11.5
5.2
3.3
10.4
11.5
2.6
3.3
10.4
5.7
5.7
11.5
11.5
11.5
20.0
25.0
42.8
60.0
60.0
136.0
25.0
42.8
40.5
60.0
60.0
136.0
42.8
34.1
40.5
60.0
40.5
40.5
60.0
42.8
34.1
60.0
60.0
25.0
42.8
60.0
40.5
40.5
60.0
60.0
65.0
136.0
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
6.0/5.0
3.5/2.9
2.5/1.6
2.5/2.0
1.1/1.0
6.0/5.0
3.5/2.9
3.7/3.0
2.5/1.6
2.5/2.0
1.1/1.0
3.5/2.9
4.4/3.8
3.7/3.0
2.5/1.6
3.7/3.0
3.7/3.0
2.5/2.0
3.5/2.9
4.4/3.8
2.5/1.6
2.5/2.0
6.0/5.0
3.5/2.9
2.5/1.6
3.7/3.0
3.7/3.0
2.5/2.0
2.5/2.0
2.3/1.8
1.1/1.0
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 3.5
– 3.5
– 3.5
– 3.0
– 2.0
– 3.5
– 3.5
– 3.0
– 3.5
– 3.0
– 2.0
– 3.5
– 2.0
– 3.0
– 3.5
– 2.0
– 2.0
– 3.0
– 3.5
– 2.0
– 3.5
– 3.0
– 3.5
– 3.5
– 3.5
– 2.0
– 2.0
– 3.0
– 3.0
– 2.8
– 2.0
2-9D1B
2-9D1B
2-11C1B
2-11C1B
7-AA03A
2-9D1B
2-9D1B
2-9D1B
2-11C1B
2-11C1B
7-AA03A
2-9D1B
2-9D1B
2-9D1B
2-11C1B
2-9D1B
2-11C1B
2-11C1B
2-9D1B
2-9D1B
2-11C1B
2-11C1B
2-9D1B
2-9D1B
2-11C1B
2-9D1B
2-11C1B
2-11C1B
2-11C1B
2-11C1B
7-AA03A
30
60
120
145
290
30
60
72
120
145
290
60
40
72
120
72
72
145
60
40
120
145
30
60
120
72
72
145
145
145
290
FREQUENCYBAND(GHz)
MIN. TYP. MIN. TYP. MIN. TYP.TYP. TYP.MAX. MAX.MAX.
8.5-9.6
8.9-9.6
9.5-10.5
10.7-11.7
11.7-12.7
12.7-13.2
—
—
—
—
—
—
—
—
—
±0.8
±0.8
±0.8
±0.8
±0.8
±0.8
±0.8
±0.8
±0.8
—
±0.8
—
±0.8
±0.8
±0.8
±0.8
±0.8
±0.8
±0.8
±0.8
±0.8
±0.8
—
—
—
—
—
—
—
—
—
– 45
—
– 45
– 45
– 45
– 45
– 45
– 45
– 45
—
– 45
—
– 45
– 45
– 45
– 45
– 45
– 45
– 45
– 45
– 28
– 28
—
—
—
—
—
—
—
—
—
– 42
– 25
– 42
– 42
– 42
– 42
– 42
– 42
– 42
—
– 42
—
– 42
– 42
– 42
– 42
– 42
– 42
– 42
– 42
– 25
– 25
X and Ku-band Internally Matched Power GaAs FETs (1/2)
MODEL No. P1dB
(dBm)IDS
(A)G1dB
(dB)IM3
(dBc)
60
70
80
100
100
60
70
80
80
100
100
70
60
80
80
80
80
100
70
60
80
100
60
70
80
80
80
90
100
100
100
Po@singlecarrier level
(dBm)
ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (TYP.)
VDS
(V)VGS
(V)IDS
(A)Tch(°C)
PT(W)
(Tc = 25 °C)
Rth(C-C)MAX./TYP.(°C/W)
VGSoff
(V) IDS(mA)@VDS = 3 V
PACKAGECODE
(Ta = 25 °C)RF PERFORMANCE SPECIFICATIONSBIAS CONDITIONS
add
(%)η G✽✽
(dB) Tch✽
(°C)VDS(V)
IDSset(A)
9
9
9
9
10
9
9
9
9
9
10
9
10
9
9
10
10
9
9
10
9
9
9
9
9
10
10
9
9
10
10
1.0
2.0
4.0
4.0
7.0
1.0
2.0
2.0
4.0
4.0
7.0
2.0
1.0
2.0
4.0
2.0
2.0
4.0
2.0
1.0
4.0
4.0
1.0
2.0
4.0
2.0
2.0
4.0
4.0
4.4
7.0✽ : ▲Tch = Channel Temperature Rise, Formula: ▲Tch = (VDS × IDS + Pin – P1dB) × Rth(C-C), ✽✽ : Gain Flatness
2-9D1B 2-11C1B 7-AA03A2-11C1B2-11C1B 1312
Specifications Table MICROWAVE SEMICONDUCTORS
TIM1414-2LTIM1414-4LATIM1414-4ULTIM1414-5LTIM1414-7TIM1414-8LTIM1414-9LTIM1414-15LTIM1414-18LTIM1414-4-252TIM1314-4ULTIM1414-7-252TIM1414-8-252TIM1314-8ULTIM1314-9LTIM1314-15ULTIM1414-18L-252TIM1314-30L
32.5
36.0
35.5
37.0
37.5
38.5
39.0
41.0
42.0
35.0
35.5
37.0
38.0
38.5
39.0
41.0
41.5
44.0
33.5
36.5
36.5
37.5
38.5
39.5
39.5
42.0
42.5
36.0
36.5
38.0
39.0
39.0
39.5
42.0
42.0
45.0
5.5
6.0
7.0
5.0
5.5
4.0
5.0
5.0
5.0
4.5
7.0
5.0
4.0
6.0
5.0
6.0
5.0
4.0
6.5
6.5
8.0
6.0
6.5
5.0
6.0
6.0
6.0
5.5
8.0
6.0
5.0
7.0
6.0
7.0
6.0
5.0
0.85
1.7
1.1
2.0
2.25
3.4
2.8
4.5
5.5
1.7
1.1
2.25
3.4
2.0
2.8
4.0
5.5
10.0
1.1
2.2
1.6
2.5
2.75
4.4
3.0
5.5
6.0
2.2
1.6
2.75
4.4
2.5
3.0
5.0
6.0
11.0
23
23
34
23
27
20
26
29
28
20
34
23
18
32
26
32
24
22
22.0
25.0
24.0
26.0
—
28.0
33.0
30.0
36.0
—
23.0
—
—
27.0
33.0
30.0
36.0
38.0
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
2.6
5.2
3.3
5.7
5.7
10.4
5.7
11.5
11.5
5.2
3.3
5.7
10.4
5.7
5.7
11.4
11.5
20.0
25.0
42.8
34.1
40.5
40.5
60.0
30.0
60.0
65.0
42.8
34.1
40.5
60.0
40.5
30.0
60.0
65.0
136.0
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
6.0/5.0
3.5/2.9
4.4/3.8
3.7/3.0
3.7/3.0
2.5/1.6
3.7/3.0
2.5/2.0
2.3/1.8
3.5/2.9
4.4/3.8
3.7/3.0
2.5/1.6
3.7/3.0
3.7/3.0
2.5/2.0
2.3/1.8
1.1/1.0
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 5
– 3.5
– 3.5
– 2.0
– 3.0
– 3.0
– 3.5
– 2.0
– 3.0
– 2.8
– 3.5
– 2.0
– 3.0
– 3.5
– 2.0
– 2.0
– 2.0
– 2.8
– 2.0
2-9D1B
2-9D1B
2-9D1B
2-9D1B
2-9D1B
2-11C1B
2-9D1B
2-11C1B
2-11C1B
2-9D1B
2-9D1B
2-9D1B
2-11C1B
2-9D1B
2-9D1B
2-11C1B
2-11C1B
7-AA03A
30
60
40
72
72
120
72
145
145
60
40
72
120
72
72
145
145
290
FREQUENCYBAND(GHz)
MIN. TYP. MIN. TYP. MIN. TYP.TYP. TYP.MAX. MAX.
14.0-14.5
13.75-14.5
±0.8
±0.8
±0.8
±0.8
—
±0.8
—
±0.8
±0.8
—
±0.8
—
—
±0.8
—
±0.8
—
—
– 45
– 45
– 45
– 45
—
– 45
—
– 45
—
—
– 45
—
—
– 45
—
– 45
—
—
– 42
– 42
– 42
– 42
—
– 42
– 25
– 42
– 25
—
– 42
—
—
– 42
– 25
– 42
– 25
– 25
X and Ku-band Internally Matched Power GaAs FETs (2/2)
MODEL No. P1dB(dBm)
IDS
(A)G1dB(dB) Po@single
carrier level(dBm)
60
70
60
80
80
80
80
100
100
70
60
80
80
80
80
80
100
100
MAX.
ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (TYP.)
VDS
(V)VGS
(V)IDS
(A)Tch(°C)
PT
(W)(Tc = 25 °C)
Rth(C-C)MAX./TYP.
(°C/W)
VGSoff
(V) IDS(mA)@VDS = 3 V
PACKAGECODE
(Ta = 25 °C)RF PERFORMANCE SPECIFICATIONSBIAS CONDITIONS
✽ : ▲Tch = Channel Temperature Rise, Formula: ▲Tch = (VDS × IDS + Pin – P1dB) × Rth(C-C), ✽✽ : Gain Flatness
2-9D1B 2-11C1B 7-AA03A
IM3
(dBc) add
(%)η G✽✽
(dB) Tch✽
(°C)VDS(V)
IDSset(A)
9
9
10
9
9
9
9
9
9
9
10
9
9
10
9
10
9
10
1.0
2.0
1.0
2.0
2.0
4.0
2.2
4.0
4.4
2.0
1.0
2.0
4.0
2.0
2.2
4.0
4.4
7.0
1514
Package Code and Outlines MICROWAVE SEMICONDUCTORS
0.6 ± 0.05
12.9
± 0
.15
2.5
MIN
.2.
5 M
IN.
4-R3.0
10.85 MAX.
17.0 ± 0.1521.0 ± 0.15
1.65
± 0
.22.
55 ±
0.2 4.
65 M
AX.
0.2
MAX
.0.
1 +
0.05
–
0.0
1
3.2 ±
0.15
4-R2.4
9.7 ±
0.1
2.5 ±
0.1
2.5
MIN
.2.
5 M
IN.
13.0 ± 0.116.5 ± 0.1
0.5 ± 0.050.
2 M
AX.
0.1
+ 0.
05
– 0
.01
8.1 + 0.2 – 0.1
1.15
± 0
.1 3.23
5 M
AX.
1.8 ±
0.1
13.0
+ 0
.25
– 0.
1
0.6 ± 0.15
3.2 ±
0.15
4.0
MIN
.4.
0 M
IN.
4-C1.2
10.85 MAX.
17.0 ± 0.1521.0 ± 0.15
1.6 ±
0.15
2.6 ±
0.15
4.95
MAX
.
0.2
MAX
.0.
1 +
0.05
– 0.
01
0.7 ± 0.05
8.0 ±
0.1
2.6 ±
0.2
17.4
± 0
.22.
5 M
IN.
2.5
MIN
.
4-C1.0
1.35
± 0
.22.
35 ±
0.2
4.22
MAX
.
0.2
MAX
.
16.2 MAX.24.2 ± 0.220.4 ± 0.1
0.1
+ 0.
05
0
0.5 ± 0.05
4-R1.0
21.9 ± 0.2
25.2 ± 0.2
17.7 MAX.
4.31
MAX
.
17.4
± 0
.23.
0 M
IN.
3.0
MIN
.
2.6 ±
0.2
8.0 ±
0.1
1.55
± 0
.2
0.15
± 0
.05
2.45
± 0
.2
0.6 ± 0.05
4-R1.5
17.0 ± 0.15
21.0 ± 0.15
10.35 MAX.
3.2 ±
0.2
12.9
± 0
.15
11 ±
0.1
5
3 ±
0.5
3 ±
0.5
4.68
MAX
.
1.68
± 0
.15
2.58
± 0
.2
0.1
+ 0.
05–
0.01
0.7 ± 0.05
20.9 ± 0.2
24.4 MAX.
17.4
± 0
.2
8.0 ±
0.2
2.6 ±
0.2
3.0
MIN
.3.
0 M
IN.
16.7 MAX.
4.1
MAX
.
1.4 ±
0.2
0.2 ±
0.05
2.4 ±
0.2
4-C1.0
7-AA05A 0.2 ± 0.057-AA09A 0.1 ± 0.05
0.7 ± 0.05
4-C1.0
20.4 ± 0.2
24.4 MAX.
17.4
± 0
.2
8.0 ±
0.2
2.6 ±
0.2
3.0
MIN
.3.
0 M
IN.
16.2 MAX.
4.1
MAX
.
1.4 ±
0.2
2.4 ±
0.2
Unit in mm Unit in mm
2-9D1B 2-11C1B
GateSourceDrain
GateSourceDrain
2-11D1B
GateSourceDrain
GateSourceDrain
GateSourceDrain
GateSourceDrain
GateSourceDrain
GateSourceDrain
2-16G1B
7-AA03A 7-AA04A/7-AA07A
7-AA05A/7-AA09A 7-AA06A
Package Code and Outlines
1716
Package Code and Outlines MICROWAVE SEMICONDUCTORS
0.6 ± 0.05
12.9
± 0
.15
2.5
MIN
.2.
5 M
IN.
4-R3.0
10.85 MAX.
17.0 ± 0.1521.0 ± 0.15
1.65
± 0
.22.
55 ±
0.2 4.
65 M
AX.
0.2
MAX
.0.
1 +
0.05
–
0.0
1
3.2 ±
0.15
4-R2.4
9.7 ±
0.1
2.5 ±
0.1
2.5
MIN
.2.
5 M
IN.
13.0 ± 0.116.5 ± 0.1
0.5 ± 0.05
0.2
MAX
.0.
1 +
0.05
–
0.0
1
8.1 + 0.2 – 0.1
1.15
± 0
.1 3.23
5 M
AX.
1.8 ±
0.1
13.0
+ 0
.25
– 0.
1
0.6 ± 0.15
3.2 ±
0.15
4.0
MIN
.4.
0 M
IN.
4-C1.2
10.85 MAX.
17.0 ± 0.1521.0 ± 0.15
1.6 ±
0.15
2.6 ±
0.15
4.95
MAX
.
0.2
MAX
.0.
1 +
0.05
– 0.
01
0.7 ± 0.05
8.0 ±
0.1
2.6 ±
0.2
17.4
± 0
.22.
5 M
IN.
2.5
MIN
.
4-C1.0
1.35
± 0
.22.
35 ±
0.2
4.22
MAX
.
0.2
MAX
.
16.2 MAX.24.2 ± 0.220.4 ± 0.1
0.1
+ 0.
05
0
0.5 ± 0.05
4-R1.0
21.9 ± 0.2
25.2 ± 0.2
17.7 MAX.
4.31
MAX
.
17.4
± 0
.23.
0 M
IN.
3.0
MIN
.
2.6 ±
0.2
8.0 ±
0.1
1.55
± 0
.2
0.15
± 0
.05
2.45
± 0
.2
0.6 ± 0.05
4-R1.5
17.0 ± 0.15
21.0 ± 0.15
10.35 MAX.
3.2 ±
0.2
12.9
± 0
.15
11 ±
0.1
5
3 ±
0.5
3 ±
0.5
4.68
MAX
.
1.68
± 0
.15
2.58
± 0
.2
0.1
+ 0.
05–
0.01
0.7 ± 0.05
20.9 ± 0.2
24.4 MAX.
17.4
± 0
.2
8.0 ±
0.2
2.6 ±
0.2
3.0
MIN
.3.
0 M
IN.
16.7 MAX.
4.1
MAX
.
1.4 ±
0.2
0.2 ±
0.05
2.4 ±
0.2
4-C1.0
7-AA05A 0.2 ± 0.057-AA09A 0.1 ± 0.05
0.7 ± 0.05
4-C1.0
20.4 ± 0.2
24.4 MAX.
17.4
± 0
.2
8.0 ±
0.2
2.6 ±
0.2
3.0
MIN
.3.
0 M
IN.
16.2 MAX.
4.1
MAX
.
1.4 ±
0.2
2.4 ±
0.2
Unit in mm Unit in mm
2-9D1B 2-11C1B
GateSourceDrain
GateSourceDrain
2-11D1B
GateSourceDrain
GateSourceDrain
GateSourceDrain
GateSourceDrain
GateSourceDrain
GateSourceDrain
2-16G1B
7-AA03A 7-AA04A/7-AA07A
7-AA05A/7-AA09A 7-AA06A
Package Code and Outlines
1716
Package Code and Outlines MICROWAVE SEMICONDUCTORS
Unit in mm N o t e7-BA42B
: VDD2: RF Output: GND
: Orientation Tab
0.6 ± 0.05
2.55
± 0
.2
3 ± 0.15 3 ± 0.15
0.5 ± 0.15
4-R1.5
17.5 ± 0.1521.0 ± 0.15
11.2 MAX.
3.2
± 0.
2
12.9
± 0
.15
3 ±
0.5
3 ±
0.5
: VGG2: VDD1:RF Input: VGG1
0.1
+ 0.
05
– 0.
01
1.68
± 0
.15 4.
68 M
AX.
1918
Package Code and Outlines MICROWAVE SEMICONDUCTORS
Unit in mm N o t e7-BA42B
: VDD2: RF Output: GND
: Orientation Tab
0.6 ± 0.05
2.55
± 0
.2
3 ± 0.15 3 ± 0.15
0.5 ± 0.15
4-R1.5
17.5 ± 0.1521.0 ± 0.15
11.2 MAX.
3.2
± 0.
2
12.9
± 0
.15
3 ±
0.5
3 ±
0.5
: VGG2: VDD1:RF Input: VGG1
0.1
+ 0.
05
– 0.
01
1.68
± 0
.15 4.
68 M
AX.
1918
Website: http://microwave.toshiba.co.jpInfrastructure Systems & Solutions Company
OVERSEAS SUBSIDIARIES AND AFFILIATES (As of April 1, 2017)
Previous edition: MSE-2016
2017
Toshiba AmericaElectronic Components, Inc.• Irvine, Headquarters Tel: (949)462-7700 Fax: (949)462-2200 Toshiba América do Sul Ltda.Tel: (011) 4083-7978
Toshiba Electronics Europe GmbH• Düsseldorf Head Office Tel: (0211)5296-0 Fax: (0211)5296-400
• France Branch Tel: (1)47282181
• Italy Branch Tel: (039)68701 Fax: (039)6870205
• Spain Branch Tel: (91)660-6798 Fax: (91)660-6799
• Sweden Branch Tel: (08)704-0900 Fax: (08)80-8459
• U.K. Branch Tel: (1932) 841600
Toshiba Electronics Asia (Singapore) Pte. Ltd.Tel: (65) 62785252 Fax: (65) 62715155 Toshiba India Private Ltd.• New Deli Office Tel: (0124)499-6600 Fax: (0124)499-6611 Toshiba Electronics Service (Thailand) Co., Ltd.Tel: (02)835-3491 Fax: (02)835-3490 Toshiba Electronics Trading (Malaysia)Sdn. Bhd.• Kuala Lumpur Head Office Tel: (03)5631-6311 Fax: (03)5631-6307
• Penang Office Tel: (04)226-8523 Fax: (04)226-8515 Toshiba Electronics Korea CorporationTel: (02)3484-4334 Fax: (02)3484-4302
Toshiba Electronics Asia, Ltd. Tel: 2375-6111 Fax: 2375-0969
Toshiba Electronics (China) Co., Ltd.• Shanghai Head Office Tel: (021)6139-3888 Fax: (021)6190-8288
• Nanjing Office Tel: (025)8689-0070 Fax: (025) 5266-5106
• Shenzhen Branch Tel: (0755)3686-0880 Fax: (0755)3686-0816
• Beijing Branch Tel: (010)6590-8796 Fax: (010)6590-8791 • Dalian Branch Tel: (0411) 8368-6882 Fax: (0411) 8369-0822 • Xiamen Branch Tel: (0592)226-1398 Fax: (0592)226-1399
The information contained herein is as of April 1, 2017.
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, including without limitation those for the hardware, software and systems listed in this document (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth therein and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
Product is intended for use in communications equipment (including Radar) on the ground . Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability, and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aircraft and space equipment, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. If you are considering using the Product in such situation, please contact us in advance.
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
Product may include products using GaAs (Gallium Arsenide). GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
All Products fully comply with RoHS. Please contact your TOSHIBA sales representative for details as to environmental matters. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.
Imitation Products are being sold and distributed in some areas. Please purchase genuine TOSHIBA products through proper channels. TOSHIBA does not take any responsibility for any damage arising out of the use of imitation products.
MSE-2017
