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Data Sheet
www.rohm.com© 2014 ROHM Co., Ltd. All rights reserved.
R6004ENX Nch 600V 4A Power MOSFET
4) Drive circuits can be simple.
2) Fast switching speed.
Tape width (mm) -
3) Gate-source voltage (VGSS) guaranteed to be 20V.
lApplication
Reel size (mm)
6) Pb-free lead plating ; RoHS compliant
Bulk
-
Type
Packaging
500
Taping code
600V980mW
40W4A
5) Parallel use is easy.
VDSS
RDS(on) (Max.)IDPD
1) Low on-resistance.
lOutline
lInner circuit
lPackaging specifications
TO-220FM
VGSS
8.0
Continuous drain current
Basic ordering unit (pcs)
Pulsed drain current
Gate - Source voltage
Parameter
Tc = 100°C
Switching Power Supply
4.0
Value
Tc = 25°C
Symbol
lAbsolute maximum ratings (Ta = 25°C)
Drain - Source voltage
-
Marking R6004ENX
lFeatures
Unit
600VDSS
ID *1 A
V
V20
V/ns
150
Reverse diode dv/dt
IAR
Range of storage temperature Tstg
Power dissipation (Tc = 25°C)
°C
W
Junction temperature
A
dv/dt *4 15
-55 to +150
ID,pulse *2
ID *1
2.2 A
A
Tj °C
mJEAR *3
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive 0.8
EAS *3
0.13
mJ
PD 40
46
(1) (3) (2)
(1) Gate (2) Drain (3) Source
*1 BODY DIODE
1/12 2014.03 - Rev.B
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Data SheetR6004ENX
Drain - Source voltage slope dv/dtVDS = 480V
-
Typ.
Symbol Conditions Values
lAbsolute maximum ratings
lThermal resistance
Thermal resistance, junction - case
Parameter
Max.Parameter
nA
Tj = 125°C
V
0.1 mA
1000
100-
-
Tj = 25°C
600
Symbol
-
Min.
Values
Typ.
100
IGSS -
V(BR)DSS VGS = 0V, ID = 1mA
IDSS
Conditions
Unit
Tsold
RthJA
Min.
RthJC
Symbol
-
Unit
°C/W
Values
V/nsTj = 25°C 50
-
3.13-
°C- 265
°C/W
UnitMax.
- -
- 70
Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 2
Gate - Source leakage current VGS = 20V, VDS = 0V
-
- V4
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
lElectrical characteristics (Ta = 25°C)
Parameter
Drain - Source breakdownvoltage
VDS = 600V, VGS = 0VZero gate voltagedrain current
WGate input resistance RG f = 1MHz, open drain - 16.7 -
Static drain - sourceon - state resistance WTj = 25°C - 0.90 0.98
Tj = 125°C -
RDS(on) *5
VGS = 10V, ID = 1.5A
1.36 -
2/12 2014.03 - Rev.B
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Data SheetR6004ENX
*1 Limited only by maximum temperature allowed.
*2 PW 10ms, Duty cycle 1%
*3 ID = 0.8A, VDD = 50V
*4 Reference measurement circuits Fig.5-1.
*5 Pulsed
6.5
-
VGate plateau voltage V(plateau) VDD ⋍ 300V, ID = 4A - -
Gate - Drain charge Qgd *5
Parameter
lGate Charge characteristics (Ta = 25°C)
Rise time tr *5 ID = 2A
SymbolValues
22
VGS = 10V
- 2.5 -
Min.
15 -
Conditions
Total gate charge
Gate - Source charge Qgs *5 ID = 4A
Qg *5 VDD ⋍ 300V
10 -
-
Typ.
ns55 -
40 -
-
-
Max.Unit
nC
-
RG = 10W -
Turn - off delay time td(off) *5 RL = 150W -
Fall time tf *5
-
pF
- 14 -
- 57
Turn - on delay time td(on) *5 VDD ⋍ 300V, VGS = 10V -
Effective output capacitance,energy related
Effective output capacitance,time related
Co(er)
Co(tr)
VGS = 0VVDS = 0V to 480V
22
250 -
gfs *5 VDS = 10V, ID = 2A
pF-
Crss f = 1MHz - 30 -
250
Max.
Reverse transfer capacitance
lElectrical characteristics (Ta = 25°C)
Parameter Symbol ConditionsValues
UnitMin. Typ.
3.0Transconductance
Input capacitance
1.5
Output capacitance Coss VDS = 25V -
- S
Ciss VGS = 0V -
3/12 2014.03 - Rev.B
www.rohm.com© 2014 ROHM Co., Ltd. All rights reserved.
Data SheetR6004ENX
IS *1
ISM *2Tc = 25°C
Inverse diode continuous,forward current
Inverse diode direct current,pulsed
-
Peak reverse recovery current
Parameter Symbol ConditionsValues
Reverse recovery charge
trr *5
-
- 15
-
Qrr *5
Irrm *5
- -
-
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
- 2.4 - mC
VSD *5 VGS = 0V, IS = 4A
Typ.
Forward voltage
Reverse recovery time
UnitMin. Max.
A
A
320
Rth2 1.61 Cth2 0.00898
0.557 Cth1Rth1
-
-
A
0.00102
K/W Ws/K
UnitValue
lTypical Transient Thermal Characteristics
Symbol Value Unit Symbol
Rth3 2.24 Cth3 0.440
IS = 4Adi/dt = 100A/ms
1.5 V
ns
8.0
4.0
-
4/12 2014.03 - Rev.B
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Data SheetR6004ENX
lElectrical characteristic curves
0
20
40
60
80
100
120
0 50 100 150 2000.0001
0.001
0.01
0.1
1
10
100
1000
0.0001 0.001 0.01 0.1 1 10 100 1000
Ta = 25ºC Single Pulse Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 70ºC/W
top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single
Fig.1 Power Dissipation Derating Curve
Pow
er D
issi
patio
n :
PD/P
D m
ax. [
%]
Junction Temperature : Tj [°C]
Fig.2 Normalized Transient Thermal Resistance vs. Pulse Width
Nor
mal
ized
Tra
nsie
nt T
herm
al R
esis
tanc
e : r
(t)
Pulse Width : PW [s]
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
Fig.3 Avalanche Energy Derating Curve vs Junction Temperature
Aval
anch
e En
ergy
: E
AS /
E AS
max
. [%
]
Junction Temperature : Tj [ºC]
5/12 2014.03 - Rev.B
www.rohm.com© 2014 ROHM Co., Ltd. All rights reserved.
Data SheetR6004ENX
lElectrical characteristic curves
0
0.5
1
1.5
2
0 1 2 3 4 5
Ta=25ºC Pulsed
VGS= 10.0V
VGS= 4.5V
VGS= 8.0V
VGS= 7.0V
VGS= 5.0V
VGS= 5.5V
0
1
2
3
4
0 10 20 30 40 50
VGS= 10.0V
VGS= 4.5V
VGS= 8.0V VGS= 7.0V
VGS= 5.5V
VGS= 5.0V
Ta=25ºC Pulsed
0
0.5
1
1.5
2
0 1 2 3 4 5
Ta=150ºC Pulsed
VGS= 10.0V
VGS= 4.5V
VGS= 8.0V VGS= 7.0V VGS= 6.5V VGS= 6.0V
VGS= 5.5V
VGS= 5.0V
0
1
2
3
4
0 10 20 30 40 50
VGS= 10.0V
VGS= 4.5V
VGS= 8.0V VGS= 7.0V
VGS= 6.5V
VGS= 6.0V
VGS= 5.5V
VGS= 5.0V
Ta=150ºC Pulsed
Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)
Fig.6 Tj = 150°C Typical Output Characteristics(I)
Fig.7 Tj = 150°C Typical Output Characteristics(II)
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]
Dra
in C
urre
nt :
I D [A
]
Dra
in C
urre
nt :
I D [A
]
Dra
in C
urre
nt :
I D [A
]
Drain - Source Voltage : VDS [V]
Dra
in C
urre
nt :
I D [A
]
Drain - Source Voltage : VDS [V]
6/12 2014.03 - Rev.B
www.rohm.com© 2014 ROHM Co., Ltd. All rights reserved.
Data SheetR6004ENX
lElectrical characteristic curves
500
550
600
650
700
750
800
850
900
-50 -25 0 25 50 75 100 125 1500.001
0.01
0.1
1
10
0 2 4 6 8 10
Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC
VDS= 10V
2.0
2.5
3.0
3.5
4.0
-50 -25 0 25 50 75 100 125 150
VDS= 10V ID= 1mA
0.01
0.1
1
10
0.01 0.1 1 10
Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC
VDS= 10V
Fig.9 Typical Transfer Characteristics Fig.8 Breakdown Voltage vs. Junction Temperature
Dra
in -
Sour
ce B
reak
dow
n Vo
ltage
: V
(BR
)DSS
[V]
Dra
in C
urre
nt :
I D [A
]
Fig.10 Gate Threshold Voltage vs. Junction Temperature
Gat
e Th
resh
old
Volta
ge :
VG
S(th
) [V]
Junction Temperature : Tj [°C]
Fig.11 Transconductance vs. Drain Current
Tran
scon
duct
ance
: g f
s [S]
Drain Current : ID [A]
Junction Temperature : Tj [°C] Gate - Source Voltage : VGS [V]
7/12 2014.03 - Rev.B
www.rohm.com© 2014 ROHM Co., Ltd. All rights reserved.
Data SheetR6004ENX
lElectrical characteristic curves
0
1000
2000
3000
4000
5000
0 5 10 15 20
ID = 4A
ID = 1.5A
Ta=25ºC
100
1000
10000
0.01 0.1 1 10
Ta=25ºC
VGS= 10V
0
500
1000
1500
2000
-50 -25 0 25 50 75 100 125 150
VGS= 10V ID = 1.5A
100
1000
10000
0.01 0.1 1 10
Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC
VGS= 10V
Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage
Stat
ic D
rain
- So
urce
On-
Stat
e R
esis
tanc
e
: RD
S(on
) [m
W]
Gate - Source Voltage : VGS [V]
Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature
Stat
ic D
rain
- So
urce
On-
Stat
e R
esis
tanc
e
: RD
S(on
) [m
W]
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State Resistance vs. Drain Current
Stat
ic D
rain
- So
urce
On-
Stat
e R
esis
tanc
e
: RD
S(on
) [m
W]
Drain Current : ID [A]
Stat
ic D
rain
- So
urce
On-
Stat
e R
esis
tanc
e
: RD
S(on
) [m
W]
Drain Current : ID [A]
Fig.15 Static Drain - Source On - State Resistance vs. Drain Current
8/12 2014.03 - Rev.B
www.rohm.com© 2014 ROHM Co., Ltd. All rights reserved.
Data SheetR6004ENX
lElectrical characteristic curves
0
1
2
3
4
5
0 200 400 600
Ta=25ºC
1
10
100
1000
10000
0.01 0.1 1 10 100 1000
Coss
Crss
Ciss
Ta=25ºC f = 1MHz VGS = 0V
1
10
100
1000
10000
0.01 0.1 1 10
Ta = 25ºC VDD = 300V VGS = 10V RG= 10W
tr
tf
td(on)
td(off)
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20
Ta = 25ºC VDD= 300V ID= 4A
Fig.16 Typical Capacitance vs. Drain - Source Voltage
Cap
acita
nce
: C [p
F]
Drain - Source Voltage : VDS [V]
Fig.18 Switching Characteristics
Switc
hing
Tim
e : t
[ns]
Drain Current : ID [A]
Fig.19 Dynamic Input Characteristics
Total Gate Charge : Qg [nC]
Gat
e - S
ourc
e Vo
ltage
: V
GS
[V]
Cos
s St
ored
Ene
rgy
: EO
SS [u
J]
Fig.17 Coss Stored Energy
Drain - Source Voltage : VDS [V]
9/12 2014.03 - Rev.B
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Data SheetR6004ENX
lElectrical characteristic curves
10
100
1000
0.1 1 10
Ta=25ºC di / dt = 100A / ms VGS = 0V
0.01
0.1
1
10
0.0 0.5 1.0 1.5
Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC
VGS=0V
Fig.20 Inverse Diode Forward Current vs. Source - Drain Voltage
Inve
rse
Dio
de F
orw
ard
Cur
rent
: I S
[A]
Source - Drain Voltage : VSD [V]
Fig.21 Reverse Recovery Time vs.Inverse Diode Forward Current
Rev
erse
Rec
over
y Ti
me
: trr [n
s]
Inverse Diode Forward Current : IS [A]
10/12 2014.03 - Rev.B
www.rohm.com© 2014 ROHM Co., Ltd. All rights reserved.
Data SheetR6004ENX
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform
11/12 2014.03 - Rev.B
www.rohm.com© 2014 ROHM Co., Ltd. All rights reserved.
Data SheetR6004ENX
lDimensions (Unit : mm)
Dimension in mm/inches
TO-220FM
MIN MAX MIN MAXA 16.60 17.60 0.654 0.693A1 1.80 2.20 0.071 0.087A2 14.80 15.40 0.583 0.606A4 6.80 7.20 0.268 0.283b 0.70 0.85 0.028 0.033b1 1.10 1.50 0.043 0.059c 0.70 0.85 0.028 0.033D 9.90 10.30 0.39 0.406E 4.40 4.80 0.173 0.189eE1 2.70 3.00 0.106 0.118F 2.80 3.20 0.11 0.126L 11.50 12.50 0.453 0.492p 3.00 3.40 0.118 0.134Q 2.10 3.10 0.083 0.122x - 0.381 - 0.015
2.54 0.10
DIMMILIMETERS INCHES
D
b1
E1
E
e
b
c
F
A2
A1
AL
x A
A4
φ p
Q
A
12/12 2014.03 - Rev.B
R1102Awww.rohm.com© 2014 ROHM Co., Ltd. All rights reserved.
Notice
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N o t e s The information contained herein is subject to change without notice.
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Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.
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