R&D status of CCD based vertex detector for JLC

Presented on LCWS2002, Aug.26-31 Jeju Island KOREA

R&D status of CCD based R&D status of CCD based vertex detector for JLCvertex detector for JLC

Tsukasa AsoTsukasa Aso Toyama National College of Maritime TechnologyToyama National College of Maritime Technology

G.Iwai, K.Fujiwara, H.Takayama, N.TamuraG.Iwai, K.Fujiwara, H.Takayama, N.TamuraNiigata UniversityNiigata University

Y.Sugimoto, A.MiyamotoY.Sugimoto, A.MiyamotoKEKKEK

K.AbeK.AbeTohoku Gakuin Univ.Tohoku Gakuin Univ.

JLC-VTXJLC-VTX 　　 GroupGroup


ContentsContents

ObjectiveObjective CCD StructuresCCD Structures Charge Carrier Multiplier CCDCharge Carrier Multiplier CCD Fast R/O SystemFast R/O System Extension of Detector SimulatorExtension of Detector Simulator Radiation Damage Tests (Proposal)Radiation Damage Tests (Proposal) SummarySummary


ObjectiveObjective Charge Coupled DeviceCharge Coupled Device 　　 (CCD)(CCD)

– 2-dimensional reconstruction2-dimensional reconstruction– Small pixel size – Large Chip sizeSmall pixel size – Large Chip size

» Usually operated at Usually operated at very low temperaturevery low temperature, -180C, -180C

Our StudyOur Study– CCD operation at CCD operation at near room temperaturenear room temperature

» Light Cooling system - Easy operationLight Cooling system - Easy operation Thermal distortion of wafersThermal distortion of wafers Remove materials - minimize the effect of MCS Remove materials - minimize the effect of MCS

– Issues!! (Achieve sufficient S/N )Issues!! (Achieve sufficient S/N )» Deterioration due to the Radiation damageDeterioration due to the Radiation damage» How to minimize the effect of radiation damageHow to minimize the effect of radiation damage

and keep clean signalsand keep clean signals


ApproachApproach Study itemsStudy items

– Various type of CCD structuresVarious type of CCD structures» Specification versus S/N, CTI, etc.Specification versus S/N, CTI, etc.

Noise proportional to dark charge Noise proportional to dark charge => MPP Operation suppressed dark charge. => MPP Operation suppressed dark charge.

CTI reduces the signal chargeCTI reduces the signal charge => Clock pattern, Notch. => Clock pattern, Notch.

– Fast readout systemsFast readout systems» Reduction of dark charge with short R/O timeReduction of dark charge with short R/O time» CTI improvements with shorter dwell timeCTI improvements with shorter dwell time

– Study of radiation damageStudy of radiation damage» Background estimation on simulationsBackground estimation on simulations» Experimental testsExperimental tests


CCD Structure (MPP CCD Structure (MPP Operation]Operation]

EEV 02-063-phase

HPK S54662-phase

HPK S54662-phase3um-wide notch


CCD Structure (cont’d]CCD Structure (cont’d]

S/N > 10 @278K

Intrinsic ResolutionIs better than 3 um.

CTI properties

CTI is propotional to N_t/n_s,Where N_t : Defect concentration N_s: Signal concentration

3Phase 2Phase

Std

CTI

Notch

VC

TI (

Irr

adia

tion

)


CCD Structure [cont’d]CCD Structure [cont’d]

Limit > 1.5E+11e/cm2JLC: 1.5E+11/cm2/yr @2.4cm

Limit > 1.5E+10 n/cm2JLC: 1E+9/cm2/Yr (?) (Back scattering from QC1)

Radiation Hardness

Vee (V) Vee (V)

Dark

curr

ent

(ele

ctro

ns/

pix

)

Electrons from Sr90 Neutrons from Cf252


CCM CCD (1)CCM CCD (1) CCM (Charge carrier multiplier)CCM (Charge carrier multiplier)

– Multiply generated charge using Multiply generated charge using Impact ionizationImpact ionization

•Multiplying generated charge directly in the charge domain before conversion into a voltage

•High-field region between the two neighboring gates•Gained energy is dissipated through Impact Ionization (II)•Small variance in the II

Impa

ct Io

niza

tionIntegrated charge

Multiplication

High-Field


CCM CCD(2)CCM CCD(2)

Since It is difficult to reduce the noise floor of existing charge Since It is difficult to reduce the noise floor of existing charge detection amplifiers particularly at high clocking frequency,detection amplifiers particularly at high clocking frequency,It it beneficial to multiply signal charge before its conversion into a It it beneficial to multiply signal charge before its conversion into a voltage.voltage.

Since the radiation damage makes signal charge smaller by Since the radiation damage makes signal charge smaller by increasing of CTI, S/N become worse.increasing of CTI, S/N become worse. We expect that CCM may keep signal larger enough after irradiation We expect that CCM may keep signal larger enough after irradiation

AdvantageAdvantage

Floor noiseFloor noise

Amp. Gain both of signal and floor noiseare multiplied.

CCM before charge detection amp. Only the signal is multiplied.


CCM CCD(3) –IMPACTRON-CCM CCD(3) –IMPACTRON- IMPACTRONIMPACTRON

– Texas InstrumentsTexas Instruments– TC253SPDTC253SPD– 658(H)x496(V)A658(H)x496(V)A

pix. In Image pix. In Image Sensing AreaSensing Area

– 7.4um 7.4um Square PixelsSquare Pixels

– Charge multiplication Charge multiplication gain 1~30(TYP)~100gain 1~30(TYP)~100

– Charge conversion Charge conversion gain w/o CCM 10uV/egain w/o CCM 10uV/e

690

496

4

500

CCM (400pix)

Charge Multiplication!!!


CCM CCD (4) –CCM CCD (4) –IMPACTRON-IMPACTRON-

-12dBCMG 7V.0 C

R/O 250kpix/s T = 4 sec.

(Preliminary)We have just started to test TC253SPD.

Pedestal

Very

very

pre

limin

ary

The study of IMPACTRON is now going on ……. Please wait for next conference. (Vertex2002)?


FastFast 　　 R/OR/O 　　 System(1)System(1) Our goal of this developmentOur goal of this development

CCD

Driver

TimingCard

(FPGA]

FADC

CPCI (6U)

S to P

FADCDigitalBoard

Base-ClockGenerator

Programming toFPGA, clock pattern.

P to S

Oth

er T

Cs

Near detectors

Feature Portable Fast operation (Goal 40MHz) Easy operation Low cost

Control/Operation of FADCMemory for data accumulation


Fast R/O System(Fast R/O System( ２２ )) Evaluation board of Flush ADCEvaluation board of Flush ADC

– CCD Signal processor chip CCD Signal processor chip for Digital Camera 9x9mm2 chip size for Digital Camera 9x9mm2 chip size ~ $6/chip~ $6/chip

– AD9844A(Analog Devices Co.)AD9844A(Analog Devices Co.)» 12bit 20MSPS ADC12bit 20MSPS ADC» 20MSPS Correlated Double Sampler20MSPS Correlated Double Sampler» 6bit variable CDS Gain Amp.6bit variable CDS Gain Amp.» Low power consumption(65mW/2.7V)Low power consumption(65mW/2.7V)

– AD6644ST(Analog Devices Co.)AD6644ST(Analog Devices Co.)» 14bit 65MSPS ADC14bit 65MSPS ADC» High power consumptionHigh power consumption


Fast R/O System(3)Fast R/O System(3) Current Status(Evaluation board)Current Status(Evaluation board)

CCD SIGNALVIDEO SIGNALAD6644 input

LVDS Input

XC2V404CS144C(FPGA)

AD9844A[FADC]

AD6644[FADC]

Backside Interface to Digital board (12 bit DBUS]


Fast R/O System(4)Fast R/O System(4)» IMPACTRON Data Acquisition using AD9844A IMPACTRON Data Acquisition using AD9844A

evaluation board. evaluation board.

Signal (5MHz)

CPCI (9U)

40MHz

5MHz

Timing GeneratorTektronix DG2030

TTL

to L

VD

S

FP

GA

XC

2V

404C

5144C

FAD

CA

D9

54

4A

Dig

ital B

oard

CCDR/O start

Base clock

CCD Digital board

Driver analog board

Pres

et

Scal

erEvaluation board


Evaluation board for FADC Digital board


Fast R/O System(5)Fast R/O System(5)

CCD SIGNAL DATACLK

SHP

SHD

CCD SIGNAL

1 H Lines

5MSps

At present,the main contribution of noiseis the interference of inputoperation clocks. This will be recovered to usePLL/DLL scheme in FPGA


Extension of Detector Extension of Detector simulator(1)simulator(1)

Developing a new detector simulator, Jupiter, baDeveloping a new detector simulator, Jupiter, based on Geant4. sed on Geant4.

Extension for background estimationExtension for background estimation» Background situation depends on the accelerator designBackground situation depends on the accelerator design» Accelerator design is often modified in design stageAccelerator design is often modified in design stage» Accelerator design also have to pay attention to the backgrouAccelerator design also have to pay attention to the backgrou

nd situation of the detectornd situation of the detector» Needs feedback each other Needs feedback each other

Detector simulator with precise Accelerator components


Extension of detector Extension of detector simulator(2)simulator(2)

Requirements Requirements – Magnet materials and fieldsMagnet materials and fields

» Position of magnetPosition of magnet» Easy to replace configuration of Easy to replace configuration of

accelerator components accelerator components magnetic fieldsmagnetic fields

» Better to simulate beam transportation and Better to simulate beam transportation and connected to the beam delivery systemconnected to the beam delivery system


Extension of detector Extension of detector simulator(3)simulator(3)

Detector Model d) Detector Model d) L* = 4.3mL* = 4.3m 3T (Solenoid)3T (Solenoid) Crossing +-3mradCrossing +-3mrad CDC

QC1

IP

VTX

QC2

SD0

QC1

VTX

Talk will be presented on session J.


Radiation test proposal(1)Radiation test proposal(1) Why is additional test of radiation damage needed?Why is additional test of radiation damage needed?

Non

-Ion

izin

g E

ner g

y L

oss

Radiation damageis thought to be proportional to NIEL

The radiation damageat JLC estimated to be10 times bigger thanour study using Sr90.

Radiation damage by high energy (>10MeV)electrons should be studied.


Radiation test proposal(2)Radiation test proposal(2) Experimental setupExperimental setup

ElectronBeam125 MeV 60 MeV

Pt 0.1X0 0.5X0

Bending Magnet

Choice of Settings1) Primary Beam Energy

125/60 MeV2) Target radiation length

0.1/0.5 X03) B field

High/Low Tesla mode

Tohoku-Univ


Radiation test proposal(3)Radiation test proposal(3) Estimation on the simulationEstimation on the simulation

60MeV Low TeslaPt 0.1 X0

125MeV High TeslaPt 0.5 X0

0 5 10 15 25 MeV/c20 0 20 40 60 80 MeV/c

CCD0

CCD1CCD2

CCD3

CCD4CCD5

Momentum range of electron irradiation will cover about 8 MeV/c < p < 80 MeV/c


ModeMode P(GeV/c)P(GeV/c) Eff.(%)Eff.(%) #hit @uA#hit @uA

60MeV.60MeV.LowTeslaLowTeslaPt 0.1 X0Pt 0.1 X0

99 7.1E-37.1E-3 4E+84E+8

1111 9.4E-39.4E-3 6E+86E+8

1414 13.0E-313.0E-3 8E+88E+8

1717 16E-316E-3 10E+810E+8

2020 20E-320E-3 13E+813E+8

2323 22E-322E-3 14E+814E+8

125MeV.125MeV.HighTestlaHighTestlaPt 0.5 X0Pt 0.5 X0

3131 0.180.18 1E+101E+10

4040 0.230.23 1E+101E+10

5151 0.280.28 2E+102E+10

6262 0.340.34 2E+102E+10

7272 0.410.41 3E+103E+10

8282 0.460.46 3E+103E+10


SummarySummary The current status of our studies for JLC The current status of our studies for JLC

CCD Vertex detector are presented.CCD Vertex detector are presented.

– The studies are concentrated on the The studies are concentrated on the radiation damage which is related to the radiation damage which is related to the background situation in JLC.background situation in JLC. These issues are studied by the both of These issues are studied by the both of experiment and simulations.experiment and simulations.

– As well as the investigation of CCD As well as the investigation of CCD properties, newly developed R/O system is properties, newly developed R/O system is designed and fabricated as a evaluation designed and fabricated as a evaluation board.board.

Documents

R&D status of CCD based vertex detector for JLC