Recombination-induced stacking fault degradation of 4 H -SiC …download.xuebalib.com/1lf62MHbyJDT.pdf · recombination-induced stacking fault SF creation and expansion has been widely

Recombination-induced stacking fault degradation of 4 H -SiC merged- P i N -SchottkydiodesJ. D. Caldwell, R. E. Stahlbush, E. A. Imhoff, K. D. Hobart, M. J. Tadjer, Q. Zhang, and A. Agarwal Citation: Journal of Applied Physics 106, 044504 (2009); doi: 10.1063/1.3194323 View online: http://dx.doi.org/10.1063/1.3194323 View Table of Contents: http://scitation.aip.org/content/aip/journal/jap/106/4?ver=pdfcov Published by the AIP Publishing Articles you may be interested in On the driving force for recombination-induced stacking fault motion in 4H–SiC J. Appl. Phys. 108, 044503 (2010); 10.1063/1.3467793 Propagation of stacking faults from surface damage in SiC PiN diodes Appl. Phys. Lett. 88, 062101 (2006); 10.1063/1.2172015 Properties and origins of different stacking faults that cause degradation in SiC PiN diodes J. Appl. Phys. 95, 1485 (2004); 10.1063/1.1635996 Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias Appl. Phys. Lett. 81, 883 (2002); 10.1063/1.1496498 Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions Appl. Phys. Lett. 80, 749 (2002); 10.1063/1.1446212

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Recombination-induced stacking fault degradation of 4H-SiCmerged-PiN-Schottky diodes

J. D. Caldwell,1,a� R. E. Stahlbush,1 E. A. Imhoff,1 K. D. Hobart,1 M. J. Tadjer,2

Q. Zhang,3 and A. Agarwal31Naval Research Laboratory, 4555 Overlook Ave., S.W., Washington, DC 20375, USA2Department of Electrical Engineering, University of Maryland, College Park, Maryland 20740, USA3Cree, Inc., 3026 E Corwallis Rd., Research Triangle Park, North Carolina 27709, USA

�Received 13 April 2009; accepted 7 July 2009; published online 21 August 2009�

The increase in the forward voltage drop observed in 4H-SiC bipolar devices due torecombination-induced stacking fault �SF� creation and expansion has been widely discussed in theliterature. It was long believed that the deleterious effect of these defects was limited to bipolardevices. Recent reports point to similar degradation in 4H-SiC DMOSFETs, a primarily unipolardevice, which was thought to be SF-related. Here we report similar degradation of both unipolar andbipolar operation of merged-PiN-Schottky diodes, a hybrid device capable of both unipolar andbipolar operation. Furthermore, we report on the observation of the temperature-mediation of thisdegradation and the observation of the current-induced recovery phenomenon. These observationsleave little doubt that this degradation is SF-induced and that if SFs are present, that they willadversely affect both bipolar and unipolar characteristics. © 2009 American Institute of Physics.�DOI: 10.1063/1.3194323�

I. INTRODUCTION

Silicon carbide is a desirable material for high powerand temperature bipolar and unipolar electronic devices,such as high blocking voltage PiN and Schottky diodes, re-spectively. However, electron-hole pair �ehp� recombinationat basal plane dislocations �BPDs� in the drift layer of SiCbipolar devices induces the nucleation and expansion ofrecombination-induced stacking faults �SFs�. Continued ehpinjection typically causes the SFs to expand, which inducesan increase in the forward voltage drop �Vf�.

1 Recently,Agarwal et al.2 determined that when the body diode of aDMOSFET was forward biased, an increase in the Vf similarto the Vf drift observed in 4H-SiC PiN diodes was observed.Furthermore, this drift was coupled with a reduction in themajority-carrier conduction current when the diffused metaloxide semiconductor field effect transistor �DMOSFET� wasoperated in unipolar mode and also led to an increase in theleakage current when the DMOSFET was operated in block-ing mode. From these results, the authors implied that thisdegradation was possibly due to the creation and expansionof SFs induced via the ehp injection that occurred during theforward biasing of the body diode. Further investigations byCaldwell et al.3 illustrated that annealing of the degradedDMOSFETs for 48 h in nitrogen atmosphere at 300 °C ledto an almost complete recovery of the Vf drift in the bodydiode I-V characteristics and of the majority-carrier conduc-tion current. Such observations are consistent with theannealing-induced recovery effects previously reported in4H-SiC PiN diodes.4 These results both support the observa-tion that SFs could be the cause for the induced degradationof not only minority carrier electrical characteristics but alsoin the majority-carrier electrical characteristics in unipolar

SiC devices. While the evidence is certainly indicative ofSF-induced degradation, conclusive evidence is still lacking.In order to determine the validity of this hypothesis, we re-port on electrical stressing and annealing studies from4H-SiC merged-PiN-Schottky �MPS� diodes, studying thecharacteristic features of this degradation in comparison tothose of the better understood degradation effects found in4H-SiC PiN diodes, as well as the annealing-induced,temperature-mediated, and current-induced Vf drift recover-ies that have been reported in 4H-SiC bipolar devices byCaldwell et al.,4,5 which conclusively illustrate the predomi-nant role that SFs play in this degradation phenomenon.

II. EXPERIMENT

The devices studied were 10 kV, 0.04 cm2 4H-SiC MPSdiodes �Fig. 1�a��, which were fabricated by Cree, Inc. A full3 in. wafer of alternating MPS and PiN diodes was fabri-cated. The wafer consisted of an epitaxially grown 125 �mthick, ND=5–6�10

14 cm−3 drift layer, followed by alumi-num ion implanted p+ ��5�1019 cm−3� junctions, boronjunction termination extensions �JTEs�, and nitrogen-dopedchannel stops. Following a �1600 °C, 5 min implant acti-vation, a 0.6 �m high-temperature field oxide was depos-ited. Prior to the p+ implantation, but following a shallowreactive ion etching etching of the zero-level mask, a UVphotoluminescence �UV-PL� image map was acquired usingthe technique reported by Stahlbush et al.,6 using a 780 nmlong pass filter to highlight the BPDs and threading disloca-tions present within the various device regions. This alloweddirect comparison between the individual device electricalcharacteristics and their response to electrical stressing withthe BPD density within the device. Contact to the device wasenabled through the 1000 Å Ni backside Ohmic contact, a400 Å Al/Ni anode contact to the p+ �annealed at 1000 °C�a�Electronic mail: [email protected].

JOURNAL OF APPLIED PHYSICS 106, 044504 �2009�

0021-8979/2009/106�4�/044504/6/$25.00 © 2009 American Institute of Physics106, 044504-1


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http://dx.doi.org/10.1063/1.3194323http://dx.doi.org/10.1063/1.3194323http://dx.doi.org/10.1063/1.3194323

and a Ti Schottky contact. An anode overlayer of 1500 Å Ti,4 �m Al and 2 �m Au was subsequently deposited andsurface passivation was accomplished via polyimide deposi-tion.

Pulsed I-V measurements were recorded at 30, 60, 100,150, and 200 °C following each successive stressing or an-nealing procedure to monitor any changes in the electricalcharacteristics that were induced. All I-V measurements wereperformed using a Tektronix 371B high-power curve tracer,operated in pulsed-current mode. This instrument providesshort �250 �s� current pulses at a duty cycle of 0.75%, si-multaneously monitoring the voltage at each applied current.In this article, each trace represents the average of three con-secutive I-V traces, with each of the three curves being com-pared to verify that no instabilities were present. Controlexperiments illustrated that the process of acquiring thepulsed I-V curves did not induce any observable change inthe device electrical characteristics, therefore all changes ob-served can be attributed to the stressing procedures illus-trated below.

The MPS diodes were stressed at 3 A dc �75 A /cm2�using an HP 6024A 200 W power supply and a high powerpogo-pin probe for the current-source contact at nominallyroom temperature. In the case of current-induced recoverymeasurements that involve ehp injection at elevated tempera-tures, a standard hot chuck was used and subsequent I-Vmeasurements at room temperature were collected followingthe removal of the forward-bias and the cooling of the de-vice. For annealing experiments, the samples were heatedwithin a nitrogen gas atmosphere in a Centurion VPM NEYvacuum furnace. A further discussion of these proceduresmay be found in the literature.4,5,7

III. DISCUSSION

Until recently, it was believed that SFs were the ener-getically favorable state of the native 4H-SiC lattice. How-ever, following the reports of Miyanagi et al.8 and Caldwellet al.,4,7 which illustrated the ability to induce contraction ofSFs via annealing at temperatures in excess of 300 °C, thishypothesis was clearly no longer valid. In the case of thelatter work, it was also determined that a complete and re-peatable recovery of the Vf drift was observed following an-

nealing at 700 °C for �5 h. Furthermore, it was also ob-served that if a current was maintained within a heavilyfaulted PiN diode at an elevated temperature ��250 °C�, acurrent-induced recovery of the Vf drift occurred.

5 This re-covery was drastically enhanced, both in the magnitude andin the speed of the recovery, in comparison to the annealing-induced recovery at that same temperature in the absence ofinjected ehps. The annealing and current-induced recoveriesof the Vf drift, most especially the latter, are characteristic ofthe SF-induced degradation and are not easily explained byannealing of other types of degradation. A model discussinga possible driving force for SF motion that is consistent withthese observations is discussed in the literature.9 Therefore,the observation of these two effects in electrically degradedunipolar devices would provide substantial evidence support-ing the Agarwal’s hypothesis.2

Figure 1�a� schematically shows the structure of theMPS diodes. There is a single anode contact to both theinterdigitated p+ implanted junctions and the n− epitaxy tocreate a hybrid device providing a low on-state voltage drop,low off-state leakage, fast switching capabilities and goodhigh temperature characteristics. At low forward biases andtemperatures, they exhibit minimal minority-carrier injec-tion, with the electrical properties showing Schottky-diodebehavior. However, as the temperature and/or forward bias isincreased, the minority-carrier injection efficiency improves;therefore the device begins to perform more like a PiN di-ode. This behavior is clearly illustrated in Fig. 1�b�, whereI-V traces from a unstressed MPS diode are presented as afunction of temperature. The knee in the I-V trace that ischaracteristic of MPS conduction is only pronounced at150 °C and above. At lower temperatures it is not clearlydelineated as is typical for implanted p+ anodes.

In order to decipher what role SFs play in the forwardbias degradation of MPS diodes, three diodes from the PL-mapped wafer were chosen to provide devices with low,moderate and high BPD densities. Since SFs are due to fault-ing BPDs, it would be expected that devices with higherBPD densities would exhibit significantly increased degrada-tion if SFs were the cause. UV-PL images of the three diodeschosen are presented in Figs. 2�a�–2�c�, respectively. TheBPDs may be identified as long white lines6 and the densities

FIG. 1. �Color online� �a� Cross-sectional schematic of the MPS diode. �b� I-V curves collected from the MPS diode with the moderate density of BPDs atvarious temperatures as labeled.

044504-2 Caldwell et al. J. Appl. Phys. 106, 044504 �2009�


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for the three diodes can be estimated as �25, �1000, and�1000 cm−2, respectively. To ensure that the assignment ofthese features within the UV-PL images was correct, similarimaging and subsequent electroluminescence imaging �notshown� of the adjacent PiN diodes at 1 A /cm2 followingforward bias stressing was performed. These efforts clearlyshowed this assignment to be correct with the long white linedefects faulting and forming expanding SFs following con-tinued ehp injection. The white dots in the UV-PL images arethreading dislocations �both screw and edge�, which do notplay a significant role in the forward-bias-induced electricaldegradation discussed here.

Initial pulsed I-V�T� traces were collected as a functionof temperature from the three MPS diodes prior to stressing,with the results from the moderate BPD density diode havingbeen presented in Fig. 1�b�. The diodes were then stressed at75 A /cm2 dc at 30 °C for periods of 1, 1, 1, 1, 2, 2, 4, and8 min �20 min total�, with pulsed I-V�T� curves collectedfollowing each successive period. Presented in Figs.2�d�–2�f� are the corresponding pulsed I-V curves collectedat 30 °C following each of these stressing periods for eachof the diodes presented in Figs. 2�a�–2�c�, respectively. It isclear that the initial Vf and the degree of Vf drift inducedwere heavily dependent upon the initial BPD density. Pre-sented in Fig. 3 is the change in Vf as a function of injectiontime for the three diodes at �a� 25 A /cm2 and T=30 °C and�b� 100 A /cm2 and T=200 °C. These two current densitiesand temperatures were monitored because the behavior of the

diodes at these conditions was indicative of low and highminority-carrier injection levels, respectively, as shown inFig. 1 �the dashed lines designates the 25 and 100 A /cm2thresholds�. It is evident that there is a strong dependence ofthe magnitude of the Vf drift on the initial BPD density,which is indicative of a direct dependence of this degradationon the creation and expansion of SFs.

In an effort to test this SF-induced degradation further,the MPS diode wafer was annealed for 288 h at 300 °C,followed by an additional 96 h at 400 °C, with I-V�T� mea-surements being recorded at various time intervals �follow-ing the first 96 h 300 °C, after 192 h 300 °C, after additional96 h 400 °C�. Presented in Figs. 4�a� and 4�b� are I-V tracesrecorded at 30 °C and 200 °C, respectively, for the diodewith moderate BPD density prior to electrical stressing�black, solid line�, following 20 min of stressing at75 A /cm2 dc �blue, dashed line� and following the entireannealing cycle �red, dash-dotted line�. The blue and redcurved arrows denote the direction of the shift in the I-Vcurve with electrical stressing and annealing, respectively. Asshown in Fig. 4�a�, these extended periods of annealing in-duced a significant, and very close to a complete, recovery ofthe forward-bias-induced electrical degradation at room tem-perature �majority carrier characteristics�. However, in thecase of the I-V measurements at 200 °C, a complete recov-ery in the low injection regime was observed, while somenonzero shift in the Vf drift in the bipolar injection regimeremained. This incomplete recovery at high injection levels

FIG. 2. �Color online� PL images collected from MPS diodes with �a� low, �b� moderate, and �c� high BPD densities. The images were collected using a 780nm long-pass filter. ��d�–�f�� Corresponding I-V traces collected following each subsequent 75 A /cm2 dc stressing period. The curved arrows indicate thedirection of Vf drift.



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may be due to contact degradation due to the annealing treat-ments, or may have been due to incomplete annealing of theSFs due to the lower annealing temperatures used in theseexperiments �400 °C� in comparison to those in PiN diodes�700 °C� where complete recovery is observed at all currentlevels. The observation that such annealing induces a recov-ery of the stressing-induced electrical degradation of theMPS diodes in both the unipolar and bipolar injection re-gimes is consistent with the behavior of 4H-SiC bipolar de-vices, such as PiN diodes, where annealing treatments in N2atmosphere at temperatures as low as 300 °C have been re-ported to induce a recovery of the SF-induced Vf drift.

4,7,10

The time dependence of the �Vf drift measured at25 A /cm2 and 30 °C and at 100 A /cm2 and 200 °C duringboth the stressing and annealing procedures discussed aboveis presented in Figs. 5�a� and 5�b�, respectively. From thisfigure, it is clear in both cases that as the annealing tempera-ture was raised the Vf-drift recovery rate also increased.From Figs. 5�a� and 5�b� it is clear that in both the unipolarand bipolar injection regimes that the degradation and recov-ery occurred in a similar fashion, however, there does appearto be an additional knee in the bipolar regime early on in the

stressing procedure. These observations are all consistentwith the degradation and recovery phenomena reported in4H-SiC PiN diodes, where again such phenomena have beenclearly linked to SF expansion and contraction processes.

More conclusive evidence in support or in contradictionof Agarwal’s hypothesis2 can be established by stressing thedegraded MPS diodes at elevated temperatures while main-taining the same current density. Such experiments in PiNdiodes were reported by Caldwell et al.,5,9–11 and as shown inFig. 6�a�, illustrated that following an extended period ofstressing at room temperature a saturation of the Vf drift at avalue denoted as �Vf

sat was observed that correlated with asaturation of the SF expansion process. However, upon heat-ing the device to 242 °C and reinitiating the stressing pro-cess at the same current density actually led to a partial re-covery of the Vf drift and a partial contraction of the SFs.This phenomenon was referred to as the “current-inducedrecovery effect.” As shown in Fig. 6�b�, a similar phenom-enon was observed in the MPS diodes under similar condi-tions. In this case, the MPS diode with the high initial BPDdensity was stressed at 75 A /cm2 from its initially unde-graded state at room temperature for a number of successive

FIG. 3. �Color online� Change in the forward voltage drift ��Vf� as a function of injection time during successive periods of forward bias operation of thediodes at 75 A /cm2 for the high �green triangles�, moderate �red circles�, and low �black boxes� basal plane dislocation �BPD� densities �a� monitored at30 °C and 25 A /cm2 and �b� 200 °C and 100 A /cm2.

FIG. 4. �Color online� I-V curves of the moderate BPD density MPS diode prior to �solid, black line� and following 20 min of electrical stressing at 75 A /cm2�blue, dashed line�, and following a 244 h 300 °C anneal and a subsequent 96 h 400 °C anneal �red, dotted line� collected at �a� 30 and �b� 200 °C. Thearrows indicate the direction of the Vf drift.



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periods as described above. As in the PiN diodes, followingsuch extended periods of electrical injection, the degradationof the forward voltage response of the diode appears to haveslowed and possibly begun to approach such a saturationcondition. In any case, the shapes of the degradation curveswere quite similar to those observed in PiN diodes. Further,upon heating the MPS diode to 200 °C and then reinitiatingthe 75 A /cm2 injection condition, the MPS diode, ratherthan continuing to degrade, actually began to recover, just asin PiN diodes. The large variations in time scales on whichthese phenomena occurred between the PiN and the MPSdevices could be attributed to the large variations in the BPDdensities, significant differences in the conduction mecha-nisms between the two device types and the large differencesin current injection levels used for the measurements re-ported here. The observation of the similar general degrada-tion behavior as a function of stressing time, the apparentapproaching of the saturation condition and finally the obser-vation of the current-induced recovery effect in the MPSdiodes within the majority carrier injection regime provideextremely strong support for Agarwal’s model.

IV. CONCLUSIONS

We have presented results indicative of SF-induced deg-radation within MPS diodes. Such degradation was observed

to influence the electrical behavior of the diodes in regimeswhere both minimal �unipolar� and high �bipolar� levels ofminority carrier injection are induced. Such observations areconsistent with those reported by Agarwal et al.,2 where deg-radation of both minority and majority carrier electrical char-acteristics of 4H-SiC DMOSFETs were observed followingextended periods of minority carrier injection into the bodydiode of the device. Our measurements illustrated that mi-nority carrier injection into MPS diodes induces a dramaticincreases in the Vf in both the majority and minority carrierinjection regimes of the I-V curve. We also illustrated thatannealing of these devices at T�300 °C induced a recoveryof the Vf drift in both regimes. Further it was reported thatfollowing extended periods of minority carrier injection thatthe degradation in the forward voltage drift slowed, similarto the saturation of the Vf drift reported in PiN diodes andthat the current-induced recovery effect was observed whenthe heavily degraded MPS diode was stressed at elevatedtemperatures. This current-induced recovery effect has beenobserved in highly degraded 4H-SiC PiN diodes and is in-dicative of the SF-induced electrical changes. These obser-vations leave very little doubt that SFs are the predominantcause for the observed degradation of the majority carrierelectrical characteristics that occurs following extended peri-ods of bipolar injection into primarily unipolar devices suchas DMOSFETs and MPS diodes.

1M. Skowronski and S. Ha, J. Appl. Phys. 99, 011101 �2006�.2A. Agarwal, H. Fatima, S. Haney, and S.-H. Ryu, IEEE Electron DeviceLett. 28, 587 �2007�.

3J. D. Caldwell, R. E. Stahlbush, E. A. Imhoff, O. J. Glembocki, K. D.Hobart, M. J. Tadjer, Q. C. Zhang, M. K. Das, and A. Agarwal, 2008Spring Meeting of the Materials Research Society �AIP, New York, 2008�,p. 195.

4J. D. Caldwell, R. E. Stahlbush, K. D. Hobart, O. J. Glembocki, and K. X.Liu, Appl. Phys. Lett. 90, 143519 �2007�.

5J. D. Caldwell, O. J. Glembocki, R. E. Stahlbush, and K. D. Hobart, Appl.Phys. Lett. 91, 243509 �2007�.

6R. E. Stahlbush, K. X. Liu, Q. Zhang, and J. J. Sumakeris, Mater. Sci.Forum 556–557, 295 �2007�.

7J. D. Caldwell, K. X. Liu, M. J. Tadjer, O. J. Glembocki, R. E. Stahlbush,K. D. Hobart, and F. Kub, J. Electron. Mater. 36, 318 �2007�.

8T. Miyanagi, H. Tsuchida, I. S. Kamata, T. Nakamura, K. Nkayama,

FIG. 5. �Color online� Change in Vf as a function of stressing �blue, squares� and annealing �red, circles� times. The temperature of the corresponding annealsare marked in the figure. The lines provide a guide to the eyes.

FIG. 6. �Color online� Change in Vf as a function of stressing time duringcurrent-induced recovery measurements performed on a �a� PiN diode and�b� the high BPD density MPS diode. Initially, the diodes were stressed at25 °C at 13.9 and 75 A /cm2, respectively, �blue circles�. The diodes werethen stressed at the same current at 242 �red squares� and 200 °C, respec-tively �magenta squares�. The lines provide a guide to the eyes.



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http://dx.doi.org/10.1063/1.2159578http://dx.doi.org/10.1109/LED.2007.897861http://dx.doi.org/10.1109/LED.2007.897861http://dx.doi.org/10.1063/1.2719650http://dx.doi.org/10.1063/1.2824391http://dx.doi.org/10.1063/1.2824391http://dx.doi.org/10.4028/www.scientific.net/MSF.556-557.295http://dx.doi.org/10.4028/www.scientific.net/MSF.556-557.295http://dx.doi.org/10.1007/s11664-006-0038-8

R. Ishii, and Y. Sugawara, Appl. Phys. Lett. 89, 062104 �2006�.9J. D. Caldwell, R. E. Stahlbush, M. G. Ancona, O. J. Glembocki, and K.D. Hobart, “On the Driving Force for Recombination-Induced StackingFault Formation in 4H-SiC,” Phys. Rev. B �in press�.

10J. D. Caldwell, R. E. Stahlbush, O. J. Glembocki, K. D. Hobart, K. X. Liu,and M. J. Tadjer, Mater. Sci. Forum 600–603, 273 �2008�.

11J. D. Caldwell, O. J. Glembocki, R. E. Stahlbush, and K. D. Hobart, J.Electron. Mater. 37, 699 �2008�.



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http://dx.doi.org/10.1063/1.2234740http://dx.doi.org/10.4028/0-87849-357-3.273http://dx.doi.org/10.1007/s11664-007-0311-5http://dx.doi.org/10.1007/s11664-007-0311-5

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Recombination-induced stacking fault degradation of 4 H -SiC …download.xuebalib.com/1lf62MHbyJDT.pdf · recombination-induced stacking fault SF creation and expansion has been widely