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[793] D. Bohm, E.P. Gross: Theory of Plasma Oscillations. B. Excitations and Damping ofOscillations, Phys. Rev. 75(12), 1864 − 1876 (1949)

[794] P.J. Barrett, H.G. Jones, R.N. Franklin: Dispersion of Electron Plasma Waves, PlasmaPhys. 10, 911 − 918 (1968)

[795] S.A. Cohen: An Introduction to Plasma Physics for Materials Processing, in PlasmaEtching—an Introduction, ed. by D.M. Manos and D.L. Flamm, Academic Press, Inc.,Boston/San Diego/New York, p. 215

[796] D. Pines: Elementary Excitations in Solids, W.A. Benjamin, New York/Amsterdam,1964, p. 112 f.

[797] D. Pines: ibid, p. 147 f.[798] M.J. Ziman: ibid, S. 154 ff.[799] F.F. Chen: Introduction to Plasma Physics, Plenum Press, New York and London,

2nd edn., 1976, Chapter 7[800] J.D. Jackson: ibid, p. 340[801] J.D. Jackson: ibid, p. 341[802] F.F. Chen: Introduction to Plasma Physics, Plenum Press, New York and London,

2nd edn., 1976, p. 239[803] B. Chapman: Glow Discharge Processes: Sputtering and Plasma Etching, John Wiley

& Sons, New York, NY, 1980, p. 130 f.[804] C.A. Bletzinger, C.A. deJoseph, jr.: Structure of RF Parallel-Plate Discharges, IEEE

Trans. Plasma Sci. PS-14(2), 124 − 131 (1986)[805] A. Fridman, L.A. Kennedy: Plasma Physics and Engineering, Taylor & Francis, New

York and London, 2004, Sect. 10.7, Eqs. (10.135) − (10.154), p. 187[806] V.A. Godyak: Soviet Radio Frequency Discharge Research, Delphic Ass., Inc., Falls

Church, Va., U.S.A., 1986, p. 103 ff.[807] P.M. Meijer, W.J. Goodheer: Calculation of the Auto-Bias Voltage for RF Frequencies

Well Above the Ion-Plasma Frequency, IEEE Trans. Plasma Sci. PS-19(2), 170−175(1991)

[808] W.J. Goedheer, P.M. Meijer: Kinetic Modeling of Positive Ions in a Low-Pressure RFDischarge, IEEE Transact. Plasma Sci. PS-19(2), 245 − 249 (1991)

[809] M. Lieberman: private communication, 1991

702 References

[810] V.A. Godyak: Soviet Radio Frequency Discharge Research, Delphic Ass., Inc., FallsChurch, Va., U.S.A., 1986, p. 112

[811] V.A. Godyak, A.S. Khanneh: Ion Bombardement Secondary Electron Maintenance ofSteady RF Discharge, IEEE Trans. Plasma Sci. PS-14(2), 112 − 123 (1986)

[812] M.A. Lieberman, S.E. Savas: Bias Voltages in Finite Length, Cylindrical and CoaxialRadio-Frequency Discharges, J. Vac. Sci. Technol. A 8(3), 1632 − 1641 (1990)

[813] H.S. Butler, G.S. Kino: Plasma Sheath Formation by Radio-Frequency Fields, Phys.Fluids 6(9), 1346 − 1355 (1963)

[814] W.P. Allis: Motions of Ions and Electrons, in Handbuch der Physik, edited by S.Flugge, vol. 21, part I, Gasentladungen I, Springer-Verlag, Berlin, 1956, p. 388

[815] W.P. Allis: Motions of Ions and Electrons, in Handbuch der Physik, edited by S.Flugge, vol. 21, part 1, Gasentladungen 1, Springer-Verlag, Berlin, 1956, p. 394

[816] R.P. Feynman, R.B. Leighton, M. Sands: The Feynman Lectures on Physics II, 7thprinting, Addison-Wesley Publishing Company, Menlo Park, London, Sydney, Manila,1972, p. 32-8

[817] S.A. Cohen: ibid, p. 215[818] S.C. Brown: Introduction to Electrical Discharges in Gases, Wiley, New York, N.Y.,

U.S.A., 1966, p. 247[819] W.P. Allis, S.C. Brown, E. Everhart: Electron Density Distribution in a High Fre-

quency Discharge in the Presence of Plasma Resonance, Phys. Rev. 84(3), 519− 522(1951)

[820] W.Z. Collison, T.Q. Ni, M.S. Barnes: Studies of the low-pressure inductively-coupledplasma etching for a larger area wafer using plasma modeling and Langmuir probe, J.Vac. Sci. Technol. 16(1), 100 − 107 (1998)

[821] M.A. Heald, C.B. Wharton: ibid, p. 30[822] M. Born: ibid, p. 260[823] W.P. Allis, S.J. Buchsbaum, A. Bers: Waves in Anisotropic Plasmas, M.I.T. Press,

Cambridge, Mass., U.S.A., 1963, p. 24[824] W.P. Allis, S.J. Buchsbaum, A. Bers: Waves in Anisotropic Plasmas, M.I.T. Press,

Cambridge, Mass., U.S.A., 1963, p. 13[825] W.P. Allis, S.J. Buchsbaum, A. Bers: Waves in Anisotropic Plasmas, M.I.T. Press,

Cambridge, Mass., U.S.A., 1963, p. 41[826] R. Boswell: Dependence of Helicon Wave Radial Structure on Electron Inertia, Austr.

J. Phys. 25, 403 − 407 (1972)[827] R. Boswell: Effect of Boundary Conditions on Radial Mode Structure of Whistlers, J.

Plasma Phys. 31(2), 197 − 208 (1984)[828] F.F. Chen: RF production of high density plasmas for accelerators, Laser Particle

Beams 7(3), 551 − 559 (1989)[829] F.F. Chen: Plasma Ionization by Helicon Waves, Plasma Phys. Contr. Fusion 33(4),

339 − 364 (1991)[830] R.W. Boswell, F.F. Chen: Helicons — The Early Years, IEEE Trans. Plasma Sci.

PS-25, 1229 (1997)[831] F.F. Chen, R.W. Boswell: Helicons — The Past Decade, IEEE Trans. Plasma Sci.

PS-25, 1245 (1997)[832] R. Kippenhahn, C. Mollenhoff: Elementare Plasmaphysik, Bibliographisches Institut,

Mannheim/Zurich, 1975, p. 102 ff.[833] A.W. Trivelpiece, R.W. Gould: Space Charge Waves in Cylindrical Plasma Columns,

J. Appl. Phys. 30(3), 1784 − 1793 (1959)[834] M.J. Ziman: ibid, p. 282 f.[835] F.F. Chen, D. Arnush: Generalized theory of helicon waves. I. Normal modes, Phys.

Plasmas 4(9), 3411 − 3421 (1997)

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[836] B. Suhl, L.R. Walker: Topics in Guided-Wave Propagation through Gyromagnetic Me-dia — Part I: The Completely Filled Guide, Bell System Techn. J. 33(5), 579 − 659(1954), p. 658 f.

[837] A.A.T.M. v. Trier: Guided Electromagnetic Waves in Anisotropic Media, Appl. Sci.Res. 3B, 305 − 371 (1953), p. 337

[838] J. v. Bladel: Electromagnetic Fields, Hemisphere Publ. Corp., Washington/NewYork/London, 1985, p. 450 ff.

[839] H. Oechsner: Electron Cyclotron Wave Resonances and Power Absorption Effects inElectrodeless Low Pressure H.F. Plasmas with a Superimposed Static Magnetic Field,Plasma Phys. 16, 835 (1974)

[840] H. Oechsner: Resonant Plasma Excitation by Electron Cyclotron Waves—Fundamentals and Applications, in Plasma Processing of Semiconductors, ed. by P.F.Williams, Kluwer Academic Publishers, 1997, pp. 157 − 180

[841] G.N. Watson: A Treatise on the Theory of Bessel Functions, Cambridge UniversityPress, Cambridge, England, 1958, p. 201

[842] G.N. Watson: ibid, p. 199[843] R.L. Ferrari, J.P. Klozenberg: The Dispersion and Attenuation of Helicon Waves in

a Cylindrical Plasma-Filled Wave-Guide, J. Plasma Phys. 2(2), 283 − 289 (1968)[844] D. Arnush: The role of Trivelpiece-Gould waves in antenna coupling to helicon waves,

Phys. Plasmas 7(7), 3042 − 3050 (2000)

Register

Abdel-Fattah, 190absorption coefficient, 619absorption edge, 34absorption spectroscopy, 369AC mobility, 106, 107acceleration grid, 280– aperture of, 280, 282– loss current at, 292acceleration voltage, 282, 285, 287, 291,

292, 294accelerator grid, 278, 284–286– hole diameter of, 281– orifice of, 284– potential of, 291accelerator hole, diameter of, 282accelerator voltage, 293, 294acoustic wave, phase velocity of, 588actinometry, 346, 368, 526– advanced, 346activation energy, 292, 397– transformation of, 519activation type, 40activation-type process, 389adhesion– of ion-beam sputtered films, 436– poor, 391adiabatic approximation, 30, 31adiabatic collision, 31adiabatic parameter, 30adsorption– non-dissociative, 519– of radicals, 519– radicals, 463afterglow, 115agglomeration, 387, 388

Agrain, 234Aisenberg, 432Alkire, 482, 555Allen, 316Allis, 16, 631α, 1st Townsend’s coefficient, 120α-electron, 70, 83α-ionization, 20, 30, 74, 75, 118, 120,

210, 212α-mode, 155α-reaction, 6α-regime, 127, 210amorphization, 292analyzer, retarding field, 22, 194, 411Anderson, 381angle of main incidence, 501, 502anisotropy, 264, 441, 445, 449, 463, 525,

527, 528, 530, 532, 537, 538, 550– caused by a static magnetic field, 610– definition of, 441– degree of, 473– dependence on E/p, 446– enhancement of, 534– etching, of, 402– maximum of, 449– of ECR etching, 499– RIPE etching, 246– static magnetic field, 235anisotropy ratio, 441anode fall, 95, 96, 419– height of, 84, 97– increase of, 96anode sheath, 43, 44, 153anode, disappearing, 410, 426anodic oxidation, 412

705

706 Register

anodic zone, 95antenna, 130– RF driven, 246, 266– slotted, 130aperture, 279– dimensions of, 279– sheath thickness of, 285aperture tunnel, 293– length of, 282Appleton + Hartree

– equation of, 627, 628, 635discriminant of, 634, 635quasi-longit. approx., 635quasi-transv. approx., 635, 636

applicator, 129, 130AR coating, 436arc, 45arc discharge, 45, 410arc, electric, 1arcing, 142, 287, 289, 290, 377, 410, 425,

426ARDE, 464, 479, 481–483, 487, 488, 513area ratio, of electrodes, 160, 166, 451Arnold, 482arrangement– axial, 273– planar, 273– radial, 273Arrhenius behavior, 525, 532Arrhenius equation, 210, 402, 456Arrhenius law, 541ashing, cold, 444Asmussen, 253aspect ratio, 441, 447, 480–483, 499, 536,

544– definition of, 441Aston, 83atmosphere, cutoff in, 614atom, metastable, 99attachment, electron, 116Auciello, 396, 398, 399Auger neutralization, 37Auger process, 36, 37, 39, 40Auger relaxation, 37avalanche– charged carriers, of, 212– electrons, of, 80

avalanche process, 89avalanche, ionization, 560azimuthal mode number, 238

Bachmann, 433backdiffusion, 401backscattering, coefficient for, 36backside cooling, with helium, 292, 407,

447backsputtering, 391, 392, 412, 413backstreaming, 294– of electrons, 284, 290, 291, 294Barber, 379Barker, 522Barkhausen, 235barrel, 443barrel reactor, 127, 440, 443–445, 529,

533, 539barrelling, 482Barrett, 583beach, magnetic, 253bead, dielectric, 143beam current, 293beam diameter, 492beam divergence, 286– dependence on the perveance, 281,

284, 286, 288beam divider, 508beam plasma– potential of, 290beam potential, 280beam, collimation of, 283beamlet, 269, 276, 277, 279, 280, 283,

294–296, 467– collimation of, 284, 295– deflection of, 284– divergence of, 284, 294– radius of, 276– source of, 282– space charge of, 284Becker, 207Beer, 7Beer’s formula, 501, 506Bell contact, 391Benoit-Cattin, 199Bernard, 199Bernstein, 316

Register 707

Berry, 19Bestwick, 530β-ionization, 28, 30β-reaction, 6Bethe, 23Bethe formula, 345, 347, 349bias potential, 246, 412, 428bias sputtering, 376, 416, 425bias voltage, 164, 172, 413, 439, 455, 485,

486– zero, 499Biehler’s model, 208Bigio, 463billiards, atomic, 380birefringence, anisotropic plasma, 631black snow, 550blaze, 503blistering, 393blocking capacitor, 140, 163, 165, 166Bohm, 77, 274, 576, 583, 589Bohm criterion, 180, 193Bohm edge, 59, 60, 62, 80, 93, 152, 154,

155, 160–162, 175, 176, 187, 216, 505,579, 592, 596, 602

– initial velocity at, 193– ion flux at, 478Bohm potential, 54, 56, 155, 580Bohm presheath, 60, 64, 74, 155, 193,

315, 319, 554, 596Bohm velocity, 54, 56, 64, 115, 182, 193,

202, 216, 274, 277, 279, 280, 315, 430,463, 554, 578, 580, 592

Bohm’s theory, 161Bohr’s radius, 7Bollinger, 439Boltzmann, 350Boltzmann equation, 192, 319, 574Boltzmann factor, 54, 55Boltzmann transport equation, 591bombardment, electronic, 491, 519, 531bombardment, ionic, 393–395, 400, 415,

416, 444, 457, 463, 490, 495, 518, 519,522, 529, 531, 533, 555

bonding, 376Born potential, 380–382, 385Born-Oppenheimer approximation, 355Born’s approximation, 23, 29

Boschi, 310Boswell, 243–245, 592, 638, 641, 651bottle, magnetic, 258, 259, 609Boyd, 316Boyle, 187Braithwaite, 196, 198, 202branching ratio, 345Brandt, 195, 379breakdown, 71, 118, 121– condition for, 75, 118– electric field for, 92, 118– experiment for, 118– field for, 120, 121, 123– in a transmission line, 145– optimum border of, 123, 124breakdown field, 105, 282breakdown voltage, 75, 98, 116, 152, 210,

225, 250, 252bridge, plasma, 290Brillouin diagram, 589Brinkmann, 205broad beam, 269, 276, 284, 294, 295– flux of, 294– radial uniformity of, 295broad beam source, electrodeless, 264broadband stub, 144Brown, 623Bruce, 478bubble, formation of, 393bulk plasma, isotropic, 575bulk resistance, 174bull’s eye, 462, 478bull’s eye effect, 527–529Bullard, 12Burton, 542Butler, 602

calotte, ground, 474, 475capacitive coupling, 152capacitive model, 172capacitor, blocking, 152carrier density, 299carrier generation, by ionization, 121carrier loss, by diffusion, 121Carter’s theory, 400cascade, collisional, 380cascading, optical, 348

708 Register

catcher anode, 451cathode fall, 43–45, 73, 74, 83, 88, 97,

98, 210, 332, 424, 425– abnormal, 45, 80, 81– abnormal discharge, of, 82– boundary of, 79– field across, 85– height of, 74, 75, 80–82– increase of, 45– normal, 45, 70, 72

thickness of, 74– pressure dependence of, 156cathode potential, normal, 80cathode sheath, 56, 153cathode, disintegration, 375cavity applicator, 256cavity resonator, 116, 256, 263– cylindrical, 263– design of, 262cavity, cylindrical, 264CCD matrix, 510CCP, 441, 514CCP discharge, 449– asymmetric behavior, 451CD, 471, 488CD loss, 488center-of-mass system, 9Cerenkov radiation, 629Chabot, 432chamber conditioning, 373chamber gap, 367Chang, 474channel formation, 387Chapman, 455characteristic wave impedance, 141characteristic, isotropic, 457charge density, 47– highest, 66charge transfer, 29, 30, 203, 284, 539– asymmetric, 31– cross section of, 31, 33– current, 292– double, 29– measurement of, 32– resonant, 31–33, 84, 182, 183, 193–195,

198, 201, 202, 205, 209, 386, 602cross section of, 32

mean free path of, 196– symmetric, 30, 31, 195, 196, 204, 212,

556charge transfer current, 293chemical etching, ion-induced, 548chemisorption, 413, 534, 549Chen, F.F., 56, 236, 242, 590, 638, 650,

659Chen, M., 346, 368, 526Cheung, 548Child, 76Child’s law, 161, 166, 198, 283Child’s equation, 80, 82, 97, 154, 317,

592– mobility limited, 78, 79, 526– space charge limited, 77, 78, 83, 264,

280, 291, 324, 526, 599chip separation, 484Choi, 465chopping, 535circuit, sacrificial, 148circulator, 129, 256, 265Clemmow, 631cluster, 397– radius of, 387clystron, 129CMA diagram, 631– simplified, 632coalescence, 387, 388, 390coating– conformal, 414– optical surfaces, of, 411coating rate– pressure dependence of, 417coaxial cable, 143, 145– characteristic impedance of, 143– design frequency of, 143– impedance of, 143– magnetic energy in, 144– solid, 143Coburn, 200, 201, 346, 368, 419, 439,

448, 480, 522, 526, 530, 533, 537cohesion– by interdiffusion, 391– interfacial, 391– oxidic, 391coil configuration, 228

Register 709

Ohmic loss, 225collimation, 295– ion beam of, 285– requirement for, 285collision– adiabatic, 31– between ions, 271– Coulombic, 125, 574– elastic, 5, 201, 202, 212, 330

between electrons and neutrals, 613– inelastic, 5, 201, 330, 574– knock-on, 384– ternary, 32collision approximation, binary, 380collision cascade, 378, 380, 381, 383collision frequency, 13, 15, 16, 65, 66,

106, 118, 124, 125, 207, 252, 339– effective, 335

volume-averaged, 336– electrons, 155, 609– of elastic scattering, 299– transition of

border of, 123, 124collision number, 202, 203, 207, 575– of electrons, 315– of ions, 193, 315collision rate, 46collision, randomization of, 201Collison, 623column, positive, 42–45compensating electrode, 301, 312compressive stress, at high pressure, 425Compton, 323condensation coefficient, 416–418condensor method, 32conditioning, 373conductance, 279conducting wall, 637conduction current, 173, 637conductivity– complex, 19– imaginary part of, 126– real part of, 126cone, 393, 394, 396, 398–400, 466– angle, 441– density of, 398, 399– formation, 464

– formation of, 393, 394, 396, 398, 472– growth of, 396– structure of, 399– truncated, 394configuration, eclipsed, 275Constantine, 499contamination-induced mechanism, 400convection, 92, 456, 460, 527core model, 180correlation function, 380correspondence principle, 30, 31corrosion, 444cosine distribution, 375cosputtering, 376, 414, 417Coulomb collision, 237, 570Coulomb potential, 19coupling– capacitive, 127, 128, 153, 154, 156,

169–172, 274– coaxial to waveguide, 145– DC, 153, 154, 156– inductive, 127, 128– inductive/resistive, 169–171– resistive, 171, 172– resonant, 233coupling factor, 166Cox, 56Cramer, 19cross drift, 266cross section– absorption, 10– angular dependence, 12– asymmetric, 195– β-ionization, 29– differential, 8, 9, 12, 19, 20, 27, 202,

207, 380, 381– elastic, 11, 15, 106

measuring of, 19– elastic collision, 30– elastic scattering, 7, 16, 28, 33, 183,

203– energy dependence of, 32, 85, 196– for electron absorption, 329– gas kinetic, 34– inelastic, 23, 24, 62– ion-neutral collisions, 181– ionization, 23, 28, 30, 74, 84, 86, 87

710 Register

electronic impact, 25, 26energy dependence of, 73, 85

– momentum transfer, 9, 13, 416– of ionization, 252– photo ionization, for, 35– thermal, 34– total, 9, 13, 27, 28, 33, 193cross-drift, 605crosstalk, source of, 147Cunge, 369Cuomo, 415current density– cathodic, 45– ionic, 57, 75– mobility limited, 449– reduced, 82, 98– space charge limited, 303, 449current limit, 139, 142current path, 80current resonance, 139cutoff, 234, 259, 628–630– angular dependence of, 628– definition of, 245– L-wave, 631– ordinary wave, 636– R-wave, 631– TEM mode, of, 143cutoff condition, 622cutoff frequency, 143, 146– definition of, 628– for Langmuir probes, 328cutoff plasma, 618, 619, 623, 625cycloid, 422, 424cyclotron frequency, 420, 604, 641– electronic, 235, 237– ionic, 235– limit, 609– of electrons, 249cyclotron resonance– electronic, 19, 246, 630– ionic, 630Czarnetzki, 302

damage, crystal, 444Damkohler number, 460, 462dark space, 48, 82, 93– anodic, 41, 84, 95, 96

electron current density, 96ion current density, 96thickness of, 97

– Aston’s, 41, 69– cathodic, 41, 43, 75, 85, 88

thickness of, 74, 76, 79, 97– collisionless, 80– Crooke’s, 1, 41, 43, 69, 85– DC discharge, of, 93– definition of, 52– electric field across, 69, 210– equilibrium, 95– Faraday’s, 41, 42, 52, 85, 95– ionization in, 81– linear field decrease across, 195– matching of, 451– thickness of, 75, 76, 80–82, 85, 97, 376

reduced, 82, 83– thickness, of, 81–83dark space shield, 376Davis, 195, 198, 202, 356Davy, 1DC bias, 140, 153, 160, 161, 169, 172,

201, 207, 232, 233, 245, 264, 376, 400,430, 445, 449, 450, 452, 481, 499, 500,513, 548–551

– drop of, 449– power dependence of, 450– pressure dependence of, 450DC conductivity, 157, 176, 403DC coupling, 152DC discharge, 487– fast changing polarity, 151DC field– linear, 204– uniform, 203DC mobility, 107DC offset, 152, 153DC sheath, 154, 193, 583– thickness of, 599de-Broglie wavelength, 30Debye, 48Debye + Huckel, theory of, 48Debye length, 2, 49–52, 56, 57, 66, 76,

77, 80, 91, 153, 158, 193, 196, 209,210, 264, 300–302, 313–315, 318, 326,332, 588, 592, 593, 596, 622

Register 711

Debye screening, 52Debye shielding, 225Debye wavevector, 66decelerator grid, 286decomposition, of InP, 551DECR system, 256Deichsel, 494Demchisin, 389density of states, 38density, of radicals, 451deposition– energy of, 427– hard, 430– soft, 430deposition rate, 412, 413, 500, 512– enhanced, 425– reactive sputtering, 411depth profile, of projectiles, 384Derjaguin, 433design frequency, 144– standing waves at, 143desorption rate, 519, 550detector diode, 265diamond– amorphous, 437– phase purity of, 433diamond crystal, 433dielectric constant– complex, 615, 616– imaginary part of, 404, 617– negative, 66– real part of, 403, 617dielectric function, 587dielectric loss– frequency dependence of, 145dielectric wall, 637dielectric, low-loss, 129, 156diffusion, 2, 87, 88, 92, 111, 116, 326,

454, 460–462, 527, 610– ambipolar, 84, 94, 114, 212, 228– loss by, 121– radial, 612– reactants of, 460diffusion coefficient, 89, 91, 96, 114, 396,

458, 460– ambipolar, 91, 92, 94, 111, 114, 115,

124

– dependence on the electric field, 112– electronic, 111– enhancement by a magnetic field, 233– free, 92– ionic, 111– normal, 612– parallel, 612– transverse, 612diffusion control, 462, 476, 483, 532, 542diffusion equation, 113– spatial dependent, 118diffusion length, 112, 114, 118, 121, 612– definition of, 121– enhancement of, 612– enlargement of, 251diffusion loss, 71, 86, 114, 115, 514diffusion mode, 112, 113diffusion potential, 228diffusion profile, 460diffusion rate, 396diffusion tensor, symmetric, 612diffusion velocity, 460dilution– chemical, 448, 449– physical, 448Dimigen, 466diode system, 376discharge– abnormal, 81, 84, 99, 154– asymmetric, 342– capacitively coupled, 207–209– coronal, 1– dark, 83– DC, self-sustained, 82– dual-frequency, 111– electrodeless, 127, 308, 313– glow, 1– hollow-cathode, 291– low pressure, 1– low temperature, 1– microwave-driven, 110– normal, 71, 84, 99– self-sustaining, 80– steady-state, 128– sustaining of, 84discharge current, 174discharge voltage, 277, 292

712 Register

dispersion relation, 238, 614– cylindric whistler waves, 646– high-density limit, 646– imaginary part of, 590– large, 646– plane whistler waves, 625– real part of, 590dispersion, spatial, 628displacement current, 637– across the sheath, 169dissociation– degree of, 368– ionizing, 20dissociation energy, of chlorine, 363distribution– cosine, 414– cosinoidal, 472distribution function, 574– velocity derivation of, 590divergence, 285, 287, 294– angle of, 275, 284– ion beam, of, 282, 283DLC, 432Donnelly, 343, 346, 356, 369, 403, 448,

541doping effect, 539Doppler effect, 302Doppler shift, 48, 353dose, ionic, 393double band, Bjerrum’s, 48, 354, 355double electrode, 327double probe, 313double probe system, 308dovetailing, 482, 484downstream configuration, 429downstream control, 452downstream plasma source, 217downstream process, 441downstream zone, 228drift, 119, 460drift term, 91drift velocity, 100, 106, 119– electronic, 212– ionic, 182Drude, equation of, 248, 623, 638Druyvesteyn, 84, 99, 350

Druyvesteynian distribution, 87, 188,190, 305, 326, 329, 330, 352, 572, 574,575

dual magnetron sputtering, 410dual-frequency– discharge, 111– system, 217dummy load, 256, 265duty cycle, 410

e-beam gun, 427E-mode, 218, 227E-type, 156earth, magnetic field of, 235, 266, 632,

633Eckstein, 379Economou, 192, 482ECR, 441, 514ECR condition, 636, 652ECR discharge, 449, 487ECR heating, 233, 235, 247, 255, 591ECR layer, 236, 253, 256, 258ECR operation, 236ECR-wave, 657eddy current, 148edge coating, 555EEDF, 15, 64, 110, 125, 155, 188, 189,

236, 237, 304, 310, 326, 329, 350–352,367, 574, 575, 591

– dependence on ω, 126– Druyvesteynian, 110– Franck-Hertz, 22– frequency adjustment of, 110– frequency dependence of, 118– high-energy tail of, 107, 126, 236– maximum of, 582– Maxwellian, 110, 114, 125– non-Maxwellian behavior of, 367– normalized, 87– operating frequency, 125– plasma density

influence of, 110– shape of, 125– tail of, 210– time-dependent, 126– time-independent, 576effective field, 126, 176, 251

Register 713

Efremov, 372, 373Egerton, 404eigenmode, radial, 657Einstein-Smoluchowski, eq. of, 221Einsteinian photo effect, 39Einsteinian relation, 91, 114, 120, 124elastic scattering, cross section of, 386electric field– for breakdown, 111– for maintenance, 111electrode fall, 57electrode gap, 155electrode potential, 152, 163, 167, 168,

172, 308– RF driven electrode, 166– time-averaged, 172electrode sheath, 56electrode surface, 160electromagnetic waves– penetration depth of, 618electron– last, 85– primary, 85– secondary, 85– thermalized, 85electron attachment, 5, 20, 25, 26, 28,

114, 115, 352, 361, 362, 364, 538, 551– dissociative, 25– reaction of, 364electron attachment, of chlorine, 363electron clouds, 48electron collection current, 304electron collection region, 304electron confinement, 271, 424electron current, 316– space-charge limitation of, 290electron current density, 84, 96electron density, 2, 50, 55–57, 92, 108,

112, 113, 116, 163, 305, 313, 449, 458,632

– determination of, 362, 636– exponential decay, 115– finite, 176– instantaneous, 181– spatial dependence of, 115– time-averaged, 598– volume-averaged, 336, 337

electron energy, 93– Maxwellian distribution of, 237, 350electron inertia, 185, 593, 655, 656, 658– neglect, 632, 636electron oscillation, longitudinal, 630electron repelling current, 315electron saturation current, 304, 329, 330electron sheath– instantaneous boundary, 594, 596, 598– maximum amplitude of, 594– pulsating, 594, 597electron suppressor, 277electron temperature, 2, 50, 55, 57, 105,

120, 125, 193, 210–212, 252, 253, 299,301, 305, 306, 309, 313, 317, 319, 326,329, 331, 344, 349, 359, 368, 369, 430,452, 517, 572, 578, 582, 583

– finite, 316– frequency effects, 186– in ECR discharges, 264, 267– inhomogenity of, 228– radial homogenity of, 228– RF discharge, in, 211electron trap, 329, 419, 544, 551electron velocity, 107electroneutrality, 49, 65electrons– inertia of, 651, 652– non-Maxwellian behavior, 326, 329– thermal velocity of, 642electrostatic oscillation– dispersion of, 586– group velocity of, 586ellipsometry, 500, 502Emeleus, 602endpoint detection, 466energy density– magnetic, 420– material, 420energy dissipation factor, 146energy loss parameter– Langevin’s, 100energy loss parameter, Langevin’s, 10,

116, 205, 567, 575, 591energy transfer, 380, 381– coefficient of, 381– frequency of, 575

714 Register

energy transfer function, 382, 384Engemann, 130ensemble, canonical, 345ensemble, size of, 202equilibrium, dynamic, 452equipartition of energy, 59equipotential surface, 143, 314– Langmuir probe, of, 196equipotential zone, 163erosion, 466– by sputtering, 400Este, 427etch characteristic, spatially dependent,

457etch profile, 462– rectangular, 489– simulation of, 555etching– fluorine-induced, 529– ion-induced, 525– neutral-induced, 525– spontaneous, 532etchrate, 290, 401, 440, 449, 480, 481,

500– angle dependence of, 488– angular dependence of, 467–469, 490– anisotropy of, 446– central, 527– change by ion density, 478– chemical, 463, 519, 526, 528– chemical part of, 446– dependence on etchrate and pressure,

450– dependency of, 449– diffusion control of, 481– flow limited, 456– flowrate limited, 456– generation to reaction, 463– horizontal, 246, 447– horizontal component, of, 457– increase of, 444, 519, 543– initial effects of, 466– ion-assisted, 463– limitation of, 455– loading dependent, 456– maximum angle, 488– maximum of, 449, 489, 551

– negative, 533, 551– normalized, 480, 528– physical, 526– pressure dependence of, 401– radial dependence of, 463, 528– radial enhancement of, 527– radial uniformity of, 228– saddle-shaped design of, 450– temperature dependence, 466– time dependent, 447– time-dependent, 480– vertical, 246, 447, 532– vertical component, of, 457evanescence, regime of, 110, 618, 619evaporation rate, 541evaporation, by electron beam, 386Ewald, 182, 183excitation electrode, 163, 164extraction system, 609extraction, single-grid, 279

facet, 399faceting, 464, 467–469, 472, 488, 489– suppression of, 488Faraday cage, 32, 443, 444Faraday cup, 276Faraday shield, 147, 148Faraday’s dark space, 52, 94, 95FCC, 126, 145, 233Federal Communications Commission, 126,

127, 145, 233Feltsan, 347Fermi acceleration, 177Fermi energy, 38, 47Fermi level, 38, 539Fermi velocity, 47Ferreira, 574field– effective, 117, 122, 251– uniform

border of, 121, 124field drift, 105field, effective, 108, 109, 126field, RMS, 107, 109filament, 80filament current, space-charge limited,

290

Register 715

film formation, theory of, 387film, electrochromic, 411filter function– after Blackman, 328– after Gauss, 328– square, 328first wafer effect, 359, 373floating potential, 52, 54, 55, 103, 153,

156, 169, 304, 306–310, 603flow rate, 460flow velocity, 456fluorescence, 403fluorescent lamp, 1, 3, 42fluorine source, permanent, 534Flynn formula, 416fomblin oil, 552foot, basic, 556foot, of the etched structure, 477force of friction, 192forward voltage, 142forward wave, 142Fox, 22Frank-Condon principle, 356Franck-Hertz experiment, 21Franklin, 1Franz, 370, 494, 545, 549free-electron model, 157freon, 542frequency– collisions, 9– elastic collisions, 111, 118, 152, 251– momentum transfer, 10, 338, 451friction, 192, 194Fridman, 591Fujiwara, 481

G-star, 1Gaebe, 371Gaede, 27Gaerttner, 415γ-electron, 70, 80–83, 85, 88, 127, 151,

155, 172, 209–212, 417, 450– yield of, 172γ-ionization, 74, 75γ-process, 69, 80, 88, 302, 600γ-reaction, 6γ-regime, 209

gap, 451, 452– between the electrodes, 451gap width, 452Garscadden, 602gas breakdown, 71gas chopping, 535gas feed, central, 464gas flow, 452–454gas shower head, 442gauge component, 346, 351gauge gas, 346GDMS, 511, 512GEC cell, 273Geis, 493Geissler, 1Geltman, 24generation rate, 86, 94– ratio to etchrate, 463geometric resonance, 140global model, 58, 339, 351, 452glow cathode, 427, 428glow discharge, 45, 196, 427– abnormal, 45– normal, 43, 45– obstructed, 97– sustaining of, 97glow discharge cleaning, 444glow lamp, 151glow negative, 86glow, intensity of, 421glow, negative, 6, 43, 44, 48, 52, 53, 59,

69, 74, 77, 82, 84–88, 95, 97, 195, 209,212

– edge of, 87– extension of, 86– length of, 87– potential of, 97– radial shrinking of, 80glowing cathode, 427Godyak, 161, 177, 183, 188, 310, 312,

338, 591, 592, 600Goedheer, 591Gottscho, 27, 302, 356, 371, 403Gould, 237Gozadinos, 178, 179, 592– pressure heating model of, 180grain boundary, 400

716 Register

gras, 394Graves, 111, 185, 210grid– aperture of, 284– dished, 270– micro-mesh, 285– plane, 270grid current, 291, 293grid erosion, 285grid optics, 269, 275, 284– acceleration system of, 271– conductance of, 282– downstream side of, 292– pattern of, 294, 296– upstream side of, 292Gross, 583, 589group velocity, 578, 614– at cutoff, 628– at resonance, 628– increase of, 658– TG-waves of, 657Grove, VII, 375growth, columnar, 390gun, e-beam, 386gyration radius, 605

H-mode, 218, 227H-wave, 256Hacman, 403Hagstrum, 38, 374Hajicek, 396Hall term, 638, 640, 656–658halocarbon, 537, 542halocarbon radical, 538hard sphere model, 14, 201hard sphere potential, 192hard spheres, 204hard wall model, 177hare’s ear, 474Harrison, 409Hartree potential, 19Heald, 624heating– displacement current, 110, 174– of electrons, 174– of ions, 174– Ohmic, 110, 158, 173, 176, 219, 220

plasma bulk,in, 176– stochastic, 110, 155, 173, 174, 209, 211,

219, 313, 335, 339, 592heating zone, 129Heavyside layer, 235Hebner, 371, 373Heg gas, 100, 117helical resonator, 368helicon, 234, 238, 441, 656, 659– phase velocity of, 236helicon approximation, 656helicon discharge, 326helicon model, 243helicon wave, 256, 258, 266– standing, 244helicon waves, 234, 243– reactor for, 246– reactor geometry, 266– regime of, 233– resonance condition, 239helicons– dispersion of, 256– phase velocity of, 658helix, 247Helmholtz equation, 89, 111Herzberg, 505hexode reactor, 156, 457HF discharge– E-type, 127– H-type, 128– ionization mechanism, 210high-density plasma, radial inhomogen-

ity of, 266high-pass filter, 152Hoffman, 415, 425hole, 393hollow cathode, 170, 209, 269– cylindrical, 98hollow cathode discharge, 97, 98, 290,

427– reduced diffusion to the walls, 97hollow waveguide, plasma filled, 243Hopwood, 221horn, 130, 443Horwitz, 171, 451Howard, 547Hu, 542, 547

Register 717

Hudson, 391, 396Huckel, 48Hussla, 403hybrid resonance, upper, 630hyperspace, parametric, 430

I(V) characteristic, 44, 45, 104, 300, 302–310, 323, 325, 326, 331, 411, 421

IADF, 191, 202–204, 207, 208, 482, 527,583

– energy dependence of, 555, 556– fully developed, 207, 556, 557– pressure dependence of, 203, 207– upper limit of, 207ICP, 441, 514ICP reactor, 128IE, 529IEDF, 191, 196, 197, 199–204, 208, 439,

529, 583– Ar+-ions, of, 196– bimodal, 199, 207– broadening of, 198– dependence on magnet field, 265– frequency dependence of, 200– maximum of, 529– Maxwellian behavior, 207– pressure dependence of, 196, 197, 202– saddle-shaped profile of, 208– shape of, 207– sheath alteration, 305ignition voltage, 104impact– collisional, 400– ionic, 478impedance, 142– characteristic, 141, 145impedance matrix, 341impedance scan, 341implantation, 377, 382, 402incandescent lamp, 1incidence– angle of, 207, 437, 555– normal, 489, 527inclination angle, 467, 551inclusion, 398, 400inductive coupling, 127inelastic scattering, electronic, 66

inertia– electronic, 483, 640– ionic, 153, 419, 483Ingold, 34, 79, 97Ingram, 196, 198, 202, 482ink-jet head, 563interdiffusion, 392interfacial layer, 391interferometry, 500invariance, adiabatic, 607, 609ion acceleration, 264ion beam– charge neutralization of, 289– collimation of, 283, 284– current density of, 287– current neutralization of, 289– neutralizion of, 290– performance of, 295– space-charge limited, 280ion beam current density– constriction of, 283– maximum constriction of, 283ion beam deposition, 270– secondary, 270, 285ion beam divergence, 287ion beam etching, 442, 474, 526ion beam mode, 260, 263ion beam reactor, processing chamber,

269ion beam source– electron confinement in, 277– inductively coupled, 272– primary electrons in, 277ion beam system, 442ion beamlet, focusing of, 282ion channeling, 498ion cloud, 49, 50ion current, 165, 316– across the sheath, 169– neutralization of, 283– performance of, 284ion current density, 84, 154– mobility limited, 76– potential dependence of, 526– space charge limited, 76ion density, 44, 48, 56, 57, 113, 158, 593,

596

718 Register

– across the sheath, 332– drop in, 478– inhomogeneous, 181– zone of equal, 260ion dose, 397, 399, 400ion energy, 483– broadening of, 198ion energy spectrum, bimodal, 201ion etching, 128, 439, 441, 445, 446ion flux, 186, 396, 399, 401, 478, 484,

492, 517, 526– dependence on angle of incidence, 203– energy dependence of, 203– mobility-limited, 70ion generation, 264ion inertia, 191, 200ion milling, 270ion milling system, 269ion optics, 287, 290, 294– four-grid, 278– sheath, 279– single-grid, 278, 279ion saturation current, 325ion sheath, electric field of, 594ion sound velocity, 578ion source, broad beam, 280ion temperature, 207, 301ion thruster, 269ion trajectory, 476ion transit frequency, 446ion velocity, 197ion wave, 578ion, radical, 444ion, thermal velocity, 183ion-beam current, 294ion-beam current density, 291, 295– maximum of, 291– requirement for, 285ion-induced etching, 555ionic density, 64ionization– avalanche of, 69– cathodic, 69– collision, 212– cross section of, 87– degree of, 2, 245, 345, 402

in a capacitively coupled plasma,234

– efficiency of, 110– electronic impact, 21, 25– gaseous, 74– impact, 6– in the cathodic dark space, 69– number of, 400– surface, 74– threshold of, 34– yield of, 511ionization degree, 427, 575ionization frequency, 112, 113, 118ionization potential, 16, 30, 31, 38, 43,

74, 82, 95, 105, 269, 330– argon, 2nd, 271– effective, 117– first, of Ar, 86– metals, of, 427ionization rate, 186, 210, 211, 230– electron density, dependence of, 210– electron temperature, dependence of,

210ionization threshold, by ionic impact, 29ionization, degree of, 244ionosphere, 615, 632, 633ions, depletion of, 478IR spectroscopy, 537island growth, 387, 388island of stability, HF discharge, 124ITO layer, 410Itoh, 512

Jensen, 210John, 510, 515Jones, 419Jungblut, 195Jurgensen, 555, 556

Kaufman, 292, 396Kaufman source, 269, 271, 274, 285,

493Kay, 200, 201, 408Kelly, 398Kelvin equation, 387Kennedy, 591Khan, 549

Register 719

Kidd, 394Kim, 549Kino, 602Kirkendall pore, 387, 391Klick, 161, 333Knoll, 415Knudsen characteristic, 436Knudsen regime, 480Kobayashi, 433Kohler, W.E., 575Koenig, 104, 165Kollath, 12Kushner, 191, 202, 370

L-matching network, 140L-network, 140L-wave, 235–237, 247, 248, 250, 561– absorption of, 250– cutoff, 250, 630, 631– dispersion, 632, 633– polarization, 637– refraction index, 631– resonance, 630, 631– wavevector, imaginary, 632L-waves, propagation of, 632Laframboise, 316Lam, 319λ/4 window, 266λ/4-layer, 411Lambert, 7Landau, 583, 589Landau damping, 67, 217, 236, 240,

242, 246, 250, 266, 561, 575, 590, 591,638, 659

Langevin, equation of, 248, 623Langmuir, 41, 58, 76, 300, 317, 323, 375Langmuir characteristic, 310Langmuir curve, 245Langmuir paradoxon, 87Langmuir plasma, 52Langmuir probe– double, 236Langmuir probe, 45, 87, 252, 299, 307,

308, 310, 592– characteristic of, 304– double, 244– effective area of, 305

– modified, 196– potential of, 317, 322, 324– probe current of, 308– probe potential of, 304– probe voltage of, 304– retarding-field region of, 304, 305– sheath potential of, 308– transition region of, 304Langmuir profile, 182, 458Langmuir sheath, 583Langmuir theory, 161large-angle scattering, 192Larmor equation, 420, 424Larmor frequency, 237Larmor radius, 247, 258, 265, 326Larmor relation, 604, 607laser interferometry, 403lattice damage, 271, 285, 384, 440, 487lattice defects, 377lattice disordering, 498Laubert, 379layer growth, with ion bombardment,

430layer, single-phase multi-element, 418Lee, Y.I., 526Lennard-Jones potential, 7, 201LER, 216, 464, 471, 472, 488leverage effect, 478Lichtenberg, 183Lieberman, 58, 161, 177, 183, 591, 592,

596, 598–600, 602– collisionless sheath model of, 180LIF, 330, 356lifetime, flowrate limited, 456lift-off technique, 386LIGA, 563Lincoln, 493lithography, 442Liu, 206, 529load impedance, 139, 142loading effect, 455–457, 525– 1st order, 483, 505, 506, 513, 528– 2nd oder, 457– first order, 478Loeb, 272Logan, 171longitudinal wave

720 Register

– dispersion of, 587– dispersion relation of, 586, 589– group velocity of, 588– penetration depth of, 622– phase velocity of, 588– skin depth, 587longitudinal waves– dispersion relation of, 588– skin depth of, 588Lorentz force, 604Lorentz plasma, 65loss– by diffusion, 514– conductive, 142, 143– cone, 609– dielectric, 142, 143– mechanism, 2– rate, 86, 94Lotz, 24, 347Lotz formula, 349Loureiro, 574low pressure plasma, 47Luthje, 466

Magistrelli, 310magnetic bottle, 258, 259, 264, 266– trapping condition, 609magnetic field, divergent, 258, 259, 265magnetic mirror, 266magnetic moment, 609magnetoplasma, 238magnetron, 129, 250, 256, 271, 420, 421– circular, 424– cylindrical, 424– planar, 424Maier-Leibnitz, 22Maissel, 104, 165, 451Malyshev, 343, 368, 369, 372, 373Mansour, 415, 416Margenau distribution, 571, 572, 575mask erosion, 464, 467mass balance, equation for, 460mass spectrometry, 500, 510– conventional, 510– energy resolved, 299– energy-resolved, 198– glow discharge (GDMS), 511, 512

– normal, 511Massey, 12, 16, 30matching network, 140, 243, 265, 340,

341, 376– L-type, 342– power loss in, 402matching stub, 263matrix sheath, thickness of, 76Mattox, 391, 427Mawella, 414Maxwell, 13, 350Maxwellian distribution, 47, 53, 86,

87, 99, 188, 190, 202, 207, 253, 352,572, 574–576, 587, 589–591

– electronic, 18, 25, 56, 59, 86, 87, 305,309, 310, 325, 326, 329, 330

with two temperatures, 305– ions, 80– maximum of, 66Maxwellization, 591Mayer, 522McDonald, 391McNevin, 448, 541McVittie, 555mean free path, 6, 7, 9, 15, 118, 124, 197,

203– argon atoms, of, 7– border of, 122, 124– electronic, 27, 65, 72, 81–83, 85, 94,

98, 108, 121, 155, 172, 210, 247, 252,271, 301, 315, 451

– ionic, 8, 56, 65, 70, 76, 79, 181, 183,191, 193, 197, 202, 301, 315, 386, 446,450, 555

– molecular, 530– of molecular ions, 198– optical excitation, of, 86– sputtered atoms, of, 386mechanism– power transfer, for, 266– roughness-induced, 395, 396Meeks, 370Meijer, 591memory effect, 534MEMS, 563meniscus, 280MERIE, 217

Register 721

metastable, 347metastable species, 6method of trajectories, of Harrison,

385microdamage, 519microdivergence, 276microetch system, 269microfeature, 440, 464, 478microloading, 476, 483micromasking, 555microwave cavity, 260microwave interferomery, 622microwave interferometry, 299, 325microwave window, 110, 130migration, radiation-induced, 400Minkiewicz, 455mirror coating, 375mirror, magnetic, 609Misium, 181mismatch, 143Mitchell, 403Mityureva, 348mobility, 43, 613– limit of, 82mode, 237, 263– cylindrical, 145– dominant, 143, 263– fundamental, 263– ion beam, 260, 263– plasma stream, 258, 263– Q-factor of, 263– stabilization of, 253– TE-, 262–264, 637– TEM, 143– TM-, 261, 263, 637

resonance frequency of, 261– Trivelpiece-Gould, 641mode converter, 265mode hopping, 250, 265, 266mode jumping, 240, 241mode mixing, 657model potential, 201Mogab, 455, 532Moisan, 110, 111, 125, 574molybdenum bronze, 392momentum transfer, 442, 466, 536– cross section for, 572

– frequency of, 571, 575, 618Monte-Carlo calculation, 555Monte-Carlo method, 186, 188, 189, 192,

201, 203, 204, 207, 383Monte-Carlo simulation, 185, 201, 208,

399Morgan, 86morphology, columnar, 388Morse, 16Mott-Guerney equation, 78Mott-Smith, 58, 300Movchan, 389Muller, 233Mullaly, 631Mullius, 448multi-wafer process, 461Meyers, 27

Nakanishi, 18native oxide, 392, 417, 444, 540near field, 147negative glow, 43, 53– EEDF in, 87negative ions– density of, 359– mean free path of, 386neutral density, 359neutral flux, 478neutralizer, 291Niggebrugge, 550Nojiri, 487Norstrøm, 104notching, 464, 482nuclear stopping power, 381, 383nucleation, 387, 392, 400, 491nucleation theory, 396number density, 13– absolute, 368

O-star, 1O-wave– cutoff, 630– cutoff of, 636– polarization, 637– resonance of, 636octopole, 246Oechsner, 651

722 Register

Oehrlein, 473, 530OES, 299, 444, 500, 502, 503Ohmic heating, 106, 109, 110, 158, 173,

176, 181, 211, 236, 334, 338Ohmic loss, frequency dependence of,

145Ohm’s law, generalized, 638, 639OML, 325O’Neill, 537open-shell system, 444, 530optical surface, coating of, 408optical switch, 563optics– three-grid, 285, 287– two-grid, 285, 287oscillation amplitude– border of, 123, 124oscillation, ionic, 86

PACVT, 529pair interaction, 380pair potential, 29Panagopoulos, 230parallel resonance, 140parallel-plate capacitor, 75parallel-plate reactor, 92, 128, 156, 168,

441, 442, 445, 453, 457, 460, 461, 463,512, 533

– configuration of, 266Park, 385partial wave method, 16particle– primary, 393– secondary, 393particle-in-cell, 313, 592Paschen, law of, 72, 98Paschen curve, 73Paschen minimum, 73, 82, 88, 120Pashley, 387path, mean free, 2PE, 128, 529Pearton, 499, 548Peclet number, 460, 462, 463PECVD, 128, 533pendulum effect, 97penetration depth, 292– ions, of, 396

– of electromagnetic fields, 233Penning, 84, 99Penning effect, 73, 74Penning ionization, 33, 511Penning process, 419, 512Person, 182perveance, 281–284, 286, 288– normalized, 282–284Petrovic, 27phase difference, 501phase velocity, 66, 141, 578, 614, 629,

631, 636, 641, 642, 652– at resonance, 629– helicon waves of, 656– TG-waves of, 657phase width, 391photodetachment, 371photoeffect, 97photoelectric effect, yield of, 84photoelectrons, yield of, 39photoionization, cross section of, 40photoluminescence, 403photoresist, degradation of, 292physisorption, 408, 549π-matching network, 140, 266π-network, 140PIC, 192, 592pick-up, 327Piejak, 188pillar, 394Fermi level, 498pit, 393, 398–400– facet of, 399PL signal, 499plasma– anisotropic

resonance in, 634– athermal, 5, 58, 576– capacitance of, 600– capacitively coupled, 168, 621– collisionless, 120, 615, 622– displacement current, 592– ECR driven, 621– electronic conduction current, 592– filtering quality of, 632– generation in the plasma bulk, 451– half-length, 182

Register 723

– inductively coupled, 618, 620– Langmuir’s definition of, 51– low-density, 2– pulsed, 115– spatially homogenous, 246– tenuous, 2, 615plasma ashing, 444, 445plasma beam mode, 264plasma boundary, 478plasma bridge, 291plasma bulk, 2, 48, 88, 109, 115, 153,

154, 157–159, 163–166, 172, 176, 178,186, 195, 209, 212, 331, 335, 439, 444,452, 495, 500, 511, 512, 517, 518, 525,576

– as homogeneous zone, 303– center of ionization, 210– composition of, 512– conduction current in, 209– conduction current within, 161– electric field across, 159, 165– electric field in, 155, 181, 575– electrical conductivity of, 336– electron confinement within, 273– electron density in, 154– electron temperature of, 358– electrons of, 91, 182, 424– entering of γ-electrons, 450– frequency effects, 186– gas temperature of, 340– glowing, 174, 340– ion density in, 332– ionization center, 211– length of, 335– plasma density in, 184– positive ions out of, 412– potential of, 155– quasineutrality of, 576– rapid electrons from, 392– resistance of, 173– surface of, 60– trapped electrons in, 181– trapping of electrons in, 420plasma color, 245plasma confinement, 217plasma density, 2, 47, 51, 52, 57, 67, 77,

103, 112, 128, 129, 206, 225, 245, 246,

253, 266, 272, 299, 309, 316, 331, 335,347, 359, 420, 427, 483, 487, 500, 514,517, 548, 559, 578, 582, 583, 659

– at substrate level, 441– at the Bohm edge, 602– by resonant coupling, 267– central, 623– frequency effects, 186– helicon reactor, 244– high, 125– high frequency generation, 186– in a capacitively coupled plasma, 234– in ECR systems, 266– in electronegative plasmas, 361– in helicon plasmas, 243– in ICP discharges, 266– in inductively coupled plasmas, 234– in microwave discharges, 111– in the ECR region, 326– increase of, 111– inhomogenity of, 228– low, 125– radial homogenity of, 228plasma density, average, 367plasma edge, 599plasma etching, 128, 439–441, 445, 446,

528– definition of, 445plasma flickering, 265plasma fluctuations, 310plasma frequency, 66, 129, 234, 263, 274,

420, 613, 641– definition of, 66– electronic, 152, 155, 156, 158, 209, 235– ionic, 152, 157, 163, 173, 209, 212, 431,

445– parallel, 335– serial, 335plasma ignition, 115, 225plasma impedance, 139, 331– capacitive, 139– inductive, 139plasma oscillation, 87, 586plasma oxidation, 412plasma potential, 52, 54, 55, 152, 153,

155, 163–165, 167–172, 174, 187–189,197, 213, 219, 220, 228, 232, 271, 277,

724 Register

278, 291, 292, 302, 304, 306–310, 313,324–327, 412, 420, 430, 443, 445, 451,452, 485, 526

– constant, 592– DC component of, 167– definition of, 169– determination of, 326, 330– fluctuations of, 327– for plasma etching, 445– in helicon plasmas, 243– instantaneous, 166, 191– local, 155– lowermost value of, 164– maximum of, 167– measuring of, 445– minimum of, 167– reduction of, 169– spatial distribution of, 370plasma resistance, 139, 638plasma sheath, 110plasma source– barrel-shaped, 623– pressure in, 279plasma speaker, 434plasma stream mode, 258, 263plasma tail, 575plasma temperature, 85plasma volume, 514plasma wave, 66, 587– generation of, 590plasma, dusty, 550plasma, high-density, 446plasma-bridge neutralizer, 272point defect, 498poisoning, 426Poisson-Boltzmann equation, 49, 55,

577, 580polarization– degree of, 500– extraordinary wave, 637– i. anisotropic plasma, 637– L-wave, 637– of ordinary waves, 636– ordinary wave, 637– R-wave, 637polymer, 471– formation of, 450

polymer point, 533, 550– bias threshold of, 550polymerization, 534– surface, 550polywater, 433Popov, 177, 236, 250positive column, 42, 43, 48, 52, 67, 69,

95, 96– field of, 86– head of, 85, 86– length of, 94– potential of, 94– striations in, 86positive column, field, of, 94potential– floating, 80, 310– self-consistent sheath, 597potential diagram, transition within, 356potential function, 380potential technique, retarded, 22potential theorem– Koenig + Maissel, 451, 602power factor, 339power output, 139power splitter, 412Poynting vector, 631pre-etching, 377pre-sputtering, 377precession plane, 631precession radius, 606presheath, 55, 56, 279, 319, 593– Bohmic, 182, 313, 319, 592, 593presputtering, 392, 512pressing, isostatic, 407pressure heating, 179pressure sensor, 563primary effect, 393primary process, 6principal direction, 628, 629principal wave– cutoff, 630– resonance, 630principal waves, 630probe potential, 197, 304, 315, 325, 330propagation band, X-wave, 630property, invariant, 81proximity effect, 475

Register 725

pseudopotential, 19pump, differential, 510pumping speed, 452pyramid, 393–395, 399, 400– formation of, 400pyrometry, 403

Q-factor, 250, 252, 263, 264, 590quadrupole, 246quality factor, 132quasineutrality, 51– definition of, 50quasineutraliy, 265

R-wave, 235, 237, 247, 248, 250– absorption, 250– band of propagation, 235– cutoff, 630, 631– dispersion, 632, 633– phase velocity of, 236– polarization, 637– range of propagation, 237– reflection, 631– refraction index, 631– resonance, 630, 631– wavevector, imaginary, 632R-waves, 236– propagation, 632Rabinowitz, 316race track, 421, 424radial configuration, 273radial mode number, 238radial uniformity, 273, 437– beam, of, 437radiation damage, 377radiation damping, 105radiation pattern– characteristics of, 130– directivity of, 130radical, 444Ramsauer, 10, 12Ramsauer effect, 16Ramsauer minimum, 573random phase motion, 106random phase movement, 106random walk, 89, 91, 208, 396Rangelow, 488, 490, 535, 555

Ranjan, 274rapid thermal annealing system, 404rate coefficient, 345, 348, 349, 352rate constant, 460, 480, 481– 2nd order, 456– area-dependent, 459– etching reaction, 458– for momentum transfer, 17– recombination, 458– second order, 458rate-limiting step, 449, 525, 527reaction energy, 466reaction energy, temperature dependence

of, 466reaction rate, 534reaction, heterogeneous, 89, 113reactive ion etching– definition of, 445reactive sputtering, 376– deposition rate, 411– pulsed, 410reactor radius, 459– normalized, 463recombination, 2, 87, 88, 94, 113, 116,

326, 456, 458, 459– rate of, 450recrystallization, 378rectification, across the RF sheath, 154redeposition, 393, 398, 399, 401, 464,

472–475, 555reference electrode, 301, 306, 308–310,

327– potential of, 306reference potential, 300, 310– Langmuir probe, 313reflected power, 142reflected voltage, 142reflected wave, 142reflection, 234– microwaves, of, 66reflection coefficient– Beer’s, 502– Fresnel’s, 501, 502reflectometer, microwave, 340refraction index, 244, 619– complex, 616– imaginary, 615

726 Register

– imaginary part of, 617– L-wave, 631– modification in a static magnetic field,

631– R-wave, 631– real part of, 617– squared, 632Reinberg, 478relaxation, non-radiative, 351remote plasma, 444remote plasma source, 217residence time, 452, 453, 460resistance term, 192, 638, 640resistive model, 172resonance, 629– angular dependence of, 628– coupled, 236, 246– damping of, 132– L-wave, 631– of ordinary waves, 636– Q-factor, 252– R-wave, 631resonance cone, 634, 636, 652, 656, 658– at cutoff, 634– at resonance, 634– opening angle, 634, 636resonance frequency– definition of, 628– TE-mode, 262resonant cavity, 129resonant charge transfer, cross section,

32retarding field analyzer, 194, 411retarding potential difference, 22retarding zone, 315Reynolds, 316Reynold’s number, 453RF band, 111RF compensation, 310RF current density, 154RF cycle– duration of, 191– period of, 191– phase of, 191RF discharge– asymmetric case, 167, 168– capacitively coupled, 196

– characteristic of, 209– geometrically symmetric, 600– high-frequency range of, 157–160– low-frequency range of, 157–159, 541,

543– magnetron-supported, 425– planar symmetric, 600– symmetric case, 167RF energy, coupling of, 104RF modulation, 194, 200, 201, 212– low-frequency regime, 199RF noise, 310, 331RF sheath, 209– capacitively coupled, 583– quasi-stationary, 193– rectification across, 598, 601– self-consistent, 597RGA, 514RIE, 128RIE lag, 464, 479–481, 484, 488Riemann, 81RIPE, 244RIPE etching, 245RMS field, 107, 109, 251Robinson, 396, 398, 492roll-to-roll coater, 564Rossnagel, 398, 399rotational vibration spectrum, 48, 355roughness-induced mechanism, 400Rundle, 574Rutherford scattering, 381

S-matrix, 341Sabisch, 205saddle profile, 201safe-guard ring, 514Saha equation, 61Salpeter, 23saturation current, 310Savas, 602Sawin, 356, 482, 555scattering– by elastic collisions, 194– by resonant charge transfer, 194– elastic, 12, 202, 203, 208scattering angle, 381scattering mechanism, 190

Register 727

scattering parameter, 9, 14Scherzer, 84Schottky, 76, 94Schottky barrier, 497Schottky diode, 499Schottky profile, 182, 184, 228, 458Schulz, 22screen grid, 277, 280, 286– aperture diameter of, 282– aperture of, 284– hole diameter of, 281– losses at, 278– sheath of, 280– voltage of, 294screen hole, diameter of, 282screening length, 49Seaward, 548secondary effect, 393, 395secondary electron, 69–71secondary electrons– energy distribution of, 36– flux of, 70– generation of, 6– production of, 71– yield for, 83– yield of, 35–38, 84, 379secondary process, 6Seebock, 575seed atom, 396seed clustering, 396Seeliger, 375SEERS resonance, 336selectivity, 439, 443, 444, 447, 448, 464,

467, 536, 537– chemical, 440– horizontal, 447– vertical, 447Self, 182, 183self bias voltage, 370self diffusion energy, 416self-bias, 452semiconductor, thermal conductivity of,

447series resonance, 140shadowing, 464, 475–477, 487, 555Shaqfeh, 556

sheath, 41, 55, 56, 58, 93, 158, 331, 430,478, 576

– acceleration process across, 591– anisotropic, 575– anodic, 43– area of, 316– at the grounded electrode, 332– at the powered electrode, 332– border of, 578– breathing, 155, 162– built-up, 302– capacitance of, 165, 600– capacitive, 170, 171, 600

rectifying behavior, 596– capacitively coupled, 191– carrier density in, 591– cathodic, 43, 153– characteristic of, 160– clear definition of, 320– collision free, 301– collision number, 196, 204– collisional, 201, 316, 591– collisionless, 187, 198, 203, 246, 267,

314–316, 446, 577, 591, 592, 599– composition of, 512– conduction current, 154, 593

ionic, 157– conduction current density, 157– contraction of, 419– DC, 41– density of ions across, 155– displacement current, 154, 157, 161,

174, 209, 592–594– displacement current density, 157– distribution of carriers across, 600– divergence free, 192– dynamics, 601– electric field, 158, 159, 201– electric field across, 591– electrode, 209– electron, 593– electron boundary of, 155– electronic conduction current, 592– entering, 202– field of, 159, 592– harmonically excited, 597– HF discharge, of, 93

728 Register

– high-voltage, 166– ion boundary of, 155– ion distribution, 160– ionic conduction current, 592– ionic part, 592– ionization in, 208– isolated electrode, of, 56– low-voltage, 166– one-dimensional model, 161– oscillating, 201, 338– phenomenological introduction of, 57– physical function of, 52– planar, 317– positively charged, 153– potential of, 217– potential theorem

Koenig + Maissel, 165, 451, 602– pulsating, 176, 191, 209– pulsating boundary of, 176, 594– qualitative definition of, 52– rectification across, 154– resistive, 171– RF field across, 592– self-consistent

thickness of, 599– stability criterion, 599– theorem

Koenig + Maissel, 165, 451, 602– thickness, 592, 596–599– thickness of, 219, 317, 322– thinning of, 283– traversing, 190– vicinity of, 577– voltage across, 103– voltage drop, 166sheath boundary, 152, 155, 581, 595– field at, 160– ion density at, 582– potential at, 581sheath capacity, 160Bohm’s, 578sheath current, nonlinear, 342sheath edge, 301sheath equation, 82, 577, 578, 582, 583sheath field, 159, 191, 202, 478, 495, 576sheath heating, 182sheath impedance, 154, 210

– capacitive, 139– nonlinearities of, 209sheath potential, 151–156, 164, 165, 168,

176, 198, 202, 209, 232, 306, 412, 431,487, 526, 575, 599

– at the grounded electrode, 332– at the powered electrode, 332– definition of, 232– for plasma etching, 445– grounded electrode, 165, 167, 209, 232– instantaneous, 207– mean value of, 171, 556– pressure dependence of, 155– RF driven electrode, 165, 167, 168– time dependent, 599– time-averaged, 191sheath resistance, 173, 174sheath theorem– Koenig + Maissel, 165, 451, 602sheath thickness, 44, 153, 158, 160, 166,

176, 179, 181, 187, 191, 196–199, 202,203, 209, 279, 315, 317, 319, 424, 439,446, 451, 491, 554

– at the RF electrode, 386– calculated, 208, 386– capacitive, 338– cold electrode, 335– DC component of, 191– effective, 202– electrically defined, 338– helicon plasmas, in, 246– hot electrode, 335– measured, 386– optically determined, 338– pressure dependence of, 156– reduction of, 421– RF component of, 191– shrinkage of, 446– time-averaged, 199sheath voltage, 163, 439, 578, 582, 583,

602– DC component of, 161, 174, 445, 603– maximum of, 198– rectified, 173– RF component of, 174, 603– RF modulation of, 445sheath voltage, mean, 191, 192

Register 729

sheath width, 188, 189– optical, 195Sheward, 414shield, 143Shinoki, 512shock wave, 396, 581Shon, 370short-range order, 391shower head, 429, 458, 464, 514, 527, 528Shul, 549shutter, 377sidewall bowing, 464, 482, 484, 555sidewall charging, 482, 483sidewall passivation, 440, 473, 479, 527,

528, 532, 533, 535–537, 542, 550, 551,554–557

– perfect, 556Sigmund, 379, 381, 395Sigmund’s theory, 381, 382, 384similarity rules, 97, 99, 100, 106, 196,

376, 449simulation program, 555single-wafer process, 461sintering, 407– theory of, 387site, 550– active, 463– surface, 463skin depth, 66, 110, 130, 143, 148, 221,

228, 234, 263, 274, 623– electromagnetic waves, 588, 619–622skin effect, 130, 142, 230, 233, 241, 273,

274, 335SLAN, 120, 130, 272sliding short, 130, 261, 263slot, 478, 480– system of, 483small-angle scattering, 84sodium vapor lamp, 1, 42solenoid– plasma source, 244– processing chamber, 244Somekh, 391Sommermeyer, 375Sopori, 474source impedance, 139source resistance, 139

space charge, 75– built up of, 43spectral line– Doppler shift of, 354– line width of, 48– linewidth of, 353– shape of, 353spike, thermal, 398Spitsyn, 433spray discharge, 97sputter cleaning, 392sputter etching, 439, 442, 443, 446sputter reactor, inverted, 442sputtered layers, argon content of, 408,

409sputtering, 128– bipolar, 427– cosine distribution, 375– cross section

energy dependence of, 379– dual magnetron, 427– magnetic materials, 424– potential function for, 379– reactive, 419sputtering coefficient, 384sputtering effect, angular dependent, 399sputtering power, 277sputtering rate, 104, 290, 376, 400, 401,

416, 417, 421, 478, 553– angle dependence of, 488, 556– at rising pressure, 401– energy dependence of, 382– enhancement of, 420– model of, 382– rise of, 420sputtering system, 378sputtering yield, 198, 288, 301, 379–382,

384, 394, 396, 398, 399, 402, 417, 499,526

– angular dependence of, 399– maximum of, 382– pressure dependence of, 401– sublimation energy, dependence on,

384St. Elmo’s fire, 1staircase process, 34Stark, 375

730 Register

Stark broadening, 302Stark effect, 302stationarity– condition for, 71, 72, 74, 75– equation of, 84Steenbeck, 98step, rate-limiting, 478Sternberg, 161Stevens, 253Stewart, 228Stix, 236stochastic heating, 176, 236, 313, 334,

339, 592stop band– R-wave, 631– X-wave, 630stopping power, nuclear, 382stray capacitance, 147stress– compressive, 390, 431, 437– tensile, 391, 431stress control, 429stress free deposit, 431striation, 42, 43, 67, 86, 414stripping, 29structure– secondary, 396, 398, 400– tertiary, 395stub, 143, 256– broadband, 145substrate bias, 400, 412, 416, 418, 427,

499– composition dependence on, 413– dependence of the deposition rate on,

412substrate biasing, 413–416, 429– density increase by, 414substrate damage, 291, 292substrate plate, 457substrate, unbiased, 264Sugai, 190Surendra, 111, 185surface– coating of, 434– effective, 115– secondary, 400– topography of, 394

surface contamination, 398surface defect, 440surface diffusion, 396, 398, 555surface energy, 381– minimum of, 390surface film, 519surface mobility, 389surface morphology, 393, 547surface oxide, 519surface polymerization, 431surface site, 550surface temperature, 396switch, micromirror-based, 563synergy, betw. phys. and chem. processes,

555Szmytkowski, 18, 348

tapering, 467, 468, 547Tardy, 512target, 146– mosaic, 416– multi-phase, 418– sheath field of, 411– sintered, 416, 417target current– DC component of, 427target voltage, 427Tav, 27TE-mode, 237, 637telegraph equation, 614TEM wave, 143, 637temperature measurement, in-situ, 403tensile stress, at low pressure, 425term of inertia, 638tertiary effect, 395TG wave, 256TG-mode, 657thermal electron emission, 45thermal velocity, electronic, 212thermalization, 59, 326, 386– deficient, 436– ion beam, of, 197thermometry, 403thickness– geometrical, 253– optical, 253Thiele module, 460–462

Register 731

Thomas-Fermi potential, 51, 380, 381Thompson, B.E., 198, 202, 203Thompson, M.W., 379, 384Thomson, J.J., 29, 132, 375, 387Thonemann, 651Thornton, 387, 389, 390, 425Thornton model, 389three-stub tuner, 145, 256, 265threshold of excitation, 5tilting, 489tilting angle, 488time-of-flight method, 206, 385TM-mode, 237, 261, 637– resonance frequency of, 261Tonks-Langmuir model, 58, 367, 370Townsend discharge, 44Townsend’s– approximation, 69, 72, 85– discharge, 71– equation, 83– ionization coefficient, 70– ionization theory, 70– theory, 83trajectory, ionic, 201, 555transformer, 140– coupling, 140transhalogenization, 538transmission line, 141, 253– velocity of phase propagation, 144transport, diffusion controlled, 386trench, 393, 395, 400, 474trenching, 464, 474, 476, 489, 555trilevel technique, 468, 545, 547triode system, 376, 427triple electrode, 327triple probe, 313Trivelpiece, 237Trivelpiece-Gould mode, 246Trivelpiece-Gould wave, 256, 641, 656,

657, 659Tsong, 379Tsujimoto, 535tungsten blue, 411tungsten bronze, 411tunnel, acceleration, 279two-level process, 347

undercut, 541uniformity– of etching, 485– radial, 446, 513, 514upper limit of, 292upstream control, 452utilization factor, 454UV/VIS level, 86

van-Allen belts, 609Vanderslice, 195, 198, 202vapor deposition– chemical, 428– physical, 428velocity discriminator, 606Vempaire, 369Vender, 592via hole, 483–485vibration spectrum, rotational, 354, 355Vlasov, 587volatility, definition of, 444voltage division, capacitive, 166, 173voltage limit, 139, 142voltage resonance, 132volume polymerization, 430, 431, 550

wafer– backside of, 447– topside of, 447wall potential, 52, 94Wannier, 24wave– cylindrical, 257– helicon, 258– rectangular, 257wave impedance, 617wave riding effect, 177wave surfing, 452wave vector– complex, 616– imaginary, 615, 632waveguide, 145– hollow, 256– Ohmic loss in, 145– radial, 256– range of transmission, 145– rectangular, 145, 256

732 Register

waveguide applicator, 256waveguide transformer, 257waveriding resonance, 591Wehner, 375, 394, 396Wertheimer, 110, 111, 125Westwood, 386, 427Wharton, 624whisker, 398, 399whistler wave, 235, 238, 632, 633– absorption of, 266– absorption, resonant of, 266– group velocity of, 632– highest velocity of, 657– phase velocity of, 234, 632– velocity of, 633whistler waves, 234– atmospheric, 235– low-frequency band of, 253– propagation of, 257– reactor, 245– regime of, 237– threshold of propagation, 235Wiese, 345Wiesemann, 310Wild’s model, 208

Wilson, 394Winkler, 310, 311, 567, 575Winters, 87, 379, 408, 417, 439, 480,

522, 526, 529, 533, 537Wood, 592work function, 35, 38–40, 74, 301Wright, 375

X-wave, 630– cutoff, 630– polarization, 637– propagation band, 630– resonance, 630– stop band, 630X-waves– polarization, 637

yield– electrons, of, 97– ionization, of, 34Yonts, 409

Zapesochnyi, 348Zarowin, 154, 302, 529zero beam, 12, 19