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8/19/2019 Report on Solar Energy Presentation http://slidepdf.com/reader/full/report-on-solar-energy-presentation 1/20 INTRODUCTION: Fossil fuel energy is the world most form of energy that is used today. It originated from the sun. The sun is the world’s source of energy. Fossil has been stored in the earth for millions of years. If the current trend of global energy used and demand continues, the supply of fossil fuels are predicted to be exhausted by 50-00years from now. !urning fossil fuel releases stored carbon into the en"ironment and this disturbs the global cycle and lead to an increase in atmospheric #$% le"el, a harmful greenhouse gas that causes global warming. !ecause of the increase in world energy demand and the threat of global warming, there is a pressing need for the de"elopment of reliable cost-e&ecti"e sources of renewable energy such as photo"oltaic solar energy. 'hoto"oltaic (')* cells are semi-conductor de"ices that wor+s under the principle of

Report on Solar Energy Presentation

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INTRODUCTION:

Fossil fuel energy is the world most form ofenergy that is used today. It originated from

the sun. The sun is the world’s source of

energy. Fossil has been stored in the earth for

millions of years. If the current trend of global

energy used and demand continues, the

supply of fossil fuels are predicted to be

exhausted by 50-00years from now. !urning

fossil fuel releases stored carbon into the

en"ironment and this disturbs the global cycle

and lead to an increase in atmospheric #$%

le"el, a harmful greenhouse gas that causesglobal warming.

!ecause of the increase in world energy

demand and the threat of global warming,

there is a pressing need for the de"elopment

of reliable cost-e&ecti"e sources of renewable

energy such as photo"oltaic solar energy.

'hoto"oltaic (')* cells are semi-conductor

de"ices that wor+s under the principle of

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 unction-e&ect to con"ert sunlight into

electricity. The basic building bloc+ of

photo"oltaic (')* cell is the crystalline silicon.

owe"er the performances of 'hoto"oltaic

cell strongly depends on ambient

temperature, be it a simple module, a

')thermal collector or building integral

photo"oltaic array. /nd as such increase in

temperature decreases the performance ofphoto"oltaic cell 1.

'hoto"oltaic (')* cells are used as an

alternati"e energy source in place of

electricity generation from the fossil fuels.

#onse2uently the more we use ') panels to

co"er for our energy needs, the more we help

reduce our impact to the en"ironment by

reducing #$% emission into the atmosphere.

3oreso,unli+e wind turbine, photo"oltaic cell

operates autonomous without any noise

generation as they do not incorporate anymo"ing mechanical parts. In some cases

photo"oltaic panels may be mounted on

adustable relating basis which is mounted on

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a 4xed poles and allows some mo"ement for

better and longer solar turning.

Furthermore, with respect to operating andmaintenance costs, ') panels, unli+e other

renewable energy technologies re2uire

minimum operating or maintenance cost. ust

performing some regular cleaning of the panel

surface is ade2uate to +eep them operating at

highest e6ciency as stated by manufacturerspeci4cation.

In addition, ') panels can be ideal for

distributed power generation as they are

highly suitable for remote application such as

in a remote farmhouse. !y maintainingrelati"ely small power generation stations in a

distributed power networ+, we can minimi7e

energy losses in the networ+ that are caused

by long distance between power generation

and power consumption points. !y utili7ing

small ') power stations, we can achie"e costreduction on the power networ+ from

increased networ+ e6ciency and lower power

losses.%1.

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LITERATURE REVIEWED

OBJECTIVE OF STUDY:

To understand the importance of'hoto"oltaic 8olar 9nergy.

 % To understands the wor+ing principle of

photo"oltaic cells.

: To understand the e&ect of ambient

temperature on the e6ciency of di&erenta"ailable photo"oltaic modules.

 EXPERIMENTAL SET UP AND

METHODOLOGY.

Four commercially a"ailable ') modules such

as 3ono crystalline silicon, 'olycrystalline

silicon, amorphous silicon and #dTe 3odules

are used in this study :1. These 8ilicons were

placed in a test facility established at 8olar

9nergy #entre (89#*, ;ew <elhi under indoor

laboratory condition, where their temperature

coe6cient was e"aluated.

Fig and % represent the large area

(%mx%m* =uic+ 8un 8imulation and

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9n"ironmental Test #hamber. 9ach of the ')

modules was connected with a temperature

sensor and digital multi meter. The

temperature of the modules is increased by

9n"ironmental Test #hamber. /s soon as the

desired temperature is reached, 8hort #ircuit

#urrent, $pen #ircuit #urrent and 'ower

output is measured.

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FI> %? 9;)I@$;39;T/A T98T #/3!9@.

 The modules temperature "aried in steps of

approximately 5 degree centigrade o"er arange of interest and +ept for :0 degree

centigrade before the actual measurement.

/lso the di&erent types of modules from the

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"arious manufacturer which are selected

randomly. The 3odule rated capacity "aries

from :B' to :00B'.

 The temperature coe6cient of these four

modules are determined according to I9#

standard at an irradiance of 000B3%.C1

 The experimental measurement of short

circuit with respect to "arious temperatures

are plotted and least s2uare 4eld cur"e is

obtained. The table "alues and the di&erent

graph for the 3odules are shown in Fig :-5

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ssssssss

FI> : Temperature #oe6cient of 8hort #ircuit

#urrent (3ono #-8i sample?0wp*

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FI> C Temperature #oe6cient of $pen #ircuit)oltage (3ono #-8i 8ample?0Bp.

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FI> 5? Temperature #oe6cient of 'ower

output (3ono #-8i 8ample? 0Bp *

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 The temperature coe6cient for this particular

module is determined by di"iding the slope of

this least s2uare 4t cur"e by the short circuit

at %5 degree centigrade.

 The same order of experiment is also

conducted for open circuit "oltage and power

output for e"aluation of temperature

coe6cient respecti"ely.

RESULT AND DISCUSSION:

 The coe6cient for short circuit current, open

circuit "oltage and power out are e"aluated

for 3ono crystalline silicon, 3ultiple

crystalline silicon , /morphous silicon and

#dTe based solar modules.

Fig :-5 represent the "ariation in current,

"oltage and power. Bith respect to

temperature to for a mono crystalline silicon

module of 0wp rated capacity.

8imilar +inds of pro4les are obtained for

di&erent rated capacity modules and also for

di&erent types of modules technologies. It can

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be obser"ed from these graphs that a linear

best 4tted straight line has been drawn based

on the experimental measurement.

 The temperature coe6cient is the slop of

these best 4tted straight line di"ided by the

"alue of that parameter at %5 degree

centigrade. In similar fashion the temperature

coe6cients are e"aluated for each modules

technology.

 Table represents the a"erage temperature

coe6cients of power for mono crystalline

silicon, multiple crystalline silicon

amorphous silicon and #dTe respecti"ely.

 The temperature coe6cient of power in monocrystalline silicon "aries from -0.:DC percent

per degree centigrade to -0.CE: percent per

degree centigrade. In case of multiple crystal

line silicon, it "aries from -0.:Epercent per

dgree centigrade to -0.50Gpercent per degree

centigrade with an a"erage of H 0.:Epercent

per degree centigrade. In case of #dTe , only

two samples are measured with "alues of

-0.GE percent per degree centigrade and

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-0.G percent per degree centigrade. In case

of amorphous silicon module only one sample

is measured and the temperature coe6cient

is -0.%:Cpercentper degree centigrade..

It is found from study that the a"erage

temperature coe6cient of power for #dTe

technology is minimum 0.Gpercent degree

centigrade* and maximum for mono

crystalline silicon module (-0.CCGpercent perdegree centigrade*.

 This result show that #dTe 8ilicon module will

perform more better in ambient temperature

region compare to other types of silicon

modules. The physics behind this result helps us to

understand the wor+ing principle of

photo"oltaic cell. Bhen solar cells are

exposed to sunlight, electrons excite from the

"alence band to the conduction band creating

charge particles called holes. In one ') cell,

the upper or ;-type layer layser is crystalline

silicon doped with phosphorus of 5 "alence

electrons while the other the lower or '-type

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layer is doped with boron which has : "alence

electron.

!y bringing ; and ' type silicon together a '-; unction ser"es for creating an electric 4eld

within the solar cells which is able to separate

electron and holes and if the accident photons

is energetic enough to discharge "alence

electron, the electron will ump to the

conduction band and initiate the solar cellsthrough the contact.

 This e&ecti"e performance of these band

( "alence and conduction band* depends on

the temperature coe6cient of the type of

silicon that build up the ') panel.Ai+e all other semiconductor de"ices, solar

cells are sensiti"e to temperature. Increase in

temperature reduces the band gap of a

semiconductor, thereby a&ecting most of the

semiconductor material parameters. The

decrease in the band gap of a semiconductor

with increasing temperature can be "iewed as

increasing the energy of the electron in the

material. Aower energy is therefore to brea+

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the bond. In the bond model of a

semiconductor band gap, reduction in the

bond energy also reduces the band gap and

in return increasing the energy of the electron

.

In a solar cell, the parameter most a&ected by

an increase in temperature is the open circuit

"oltage. The open circuit "oltage decrease

with temperature because of the temperaturedependence of Io . 51

CONCLUSION

 Temperature can a&ect how electron ows

through an electrical circuit by changing the

speed at which the electrons tra"el. This

wor+ help in understanding the "ariation in

power output from a particular ') technology

due to "ariation in operating temperatureonly. 8ince solar panels wor+ best at certain

weather and temperature conditions such as

cold and sunny climate, engineers design

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ways to impro"e the e6ciency of solar panels

that operate in non-optimal temperature

condition. This might in"ol"e designing

cooling systems that use outside air, fans and

pump.

REFERENCES

1 >ri6th .8, @athod ;8, 'aslas+i . some

test of at plate photo"oltaic modules cell

temperatures in simulated 4eld condition .

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%1 <ino >reen une :, %0%. 'ros and #on

of 'hoto"oltaic (')* 'anels-8olar9nergy.

:1 8abnis />, #lemens .T (DD*#haracteri7ation of The 9lectron 3obility in

 The In"erter 8i 8urface Int 9lectron <e"ices

3tg E-%

C1 ;elson . The 'hysics of solar cells

('roperties of 8emiconductor materials*

Imperial college press, Aondon, %00:.

51 )arshni J' (DG* Temperature

dependence of the energy gap in

semiconductors 'hysics :C? CD-5C.

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  FI> % =KI#L8K; 8I3KA/TI$;8

EUROPEAN

UNIVERSITY OF

LEFKE

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STUDENT NAME: EDWIN OKPAKO

STUDENT NUMBER: 15417

DEPARTMENT: ENVIRONMENTAL SCIENCE

COURSE: RENEWABLE ENERGY !M.S"#

TOPIC: COMPARISON PERFORMANCE

MEASUREMENT OF PHOTOVOLTAIC MODULES

UNDER THE INFLUENCE OF AMBIENTTEMPERATURE.