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8/19/2019 Report on Solar Energy Presentation
http://slidepdf.com/reader/full/report-on-solar-energy-presentation 1/20
INTRODUCTION:
Fossil fuel energy is the world most form ofenergy that is used today. It originated from
the sun. The sun is the world’s source of
energy. Fossil has been stored in the earth for
millions of years. If the current trend of global
energy used and demand continues, the
supply of fossil fuels are predicted to be
exhausted by 50-00years from now. !urning
fossil fuel releases stored carbon into the
en"ironment and this disturbs the global cycle
and lead to an increase in atmospheric #$%
le"el, a harmful greenhouse gas that causesglobal warming.
!ecause of the increase in world energy
demand and the threat of global warming,
there is a pressing need for the de"elopment
of reliable cost-e&ecti"e sources of renewable
energy such as photo"oltaic solar energy.
'hoto"oltaic (')* cells are semi-conductor
de"ices that wor+s under the principle of
8/19/2019 Report on Solar Energy Presentation
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unction-e&ect to con"ert sunlight into
electricity. The basic building bloc+ of
photo"oltaic (')* cell is the crystalline silicon.
owe"er the performances of 'hoto"oltaic
cell strongly depends on ambient
temperature, be it a simple module, a
')thermal collector or building integral
photo"oltaic array. /nd as such increase in
temperature decreases the performance ofphoto"oltaic cell 1.
'hoto"oltaic (')* cells are used as an
alternati"e energy source in place of
electricity generation from the fossil fuels.
#onse2uently the more we use ') panels to
co"er for our energy needs, the more we help
reduce our impact to the en"ironment by
reducing #$% emission into the atmosphere.
3oreso,unli+e wind turbine, photo"oltaic cell
operates autonomous without any noise
generation as they do not incorporate anymo"ing mechanical parts. In some cases
photo"oltaic panels may be mounted on
adustable relating basis which is mounted on
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a 4xed poles and allows some mo"ement for
better and longer solar turning.
Furthermore, with respect to operating andmaintenance costs, ') panels, unli+e other
renewable energy technologies re2uire
minimum operating or maintenance cost. ust
performing some regular cleaning of the panel
surface is ade2uate to +eep them operating at
highest e6ciency as stated by manufacturerspeci4cation.
In addition, ') panels can be ideal for
distributed power generation as they are
highly suitable for remote application such as
in a remote farmhouse. !y maintainingrelati"ely small power generation stations in a
distributed power networ+, we can minimi7e
energy losses in the networ+ that are caused
by long distance between power generation
and power consumption points. !y utili7ing
small ') power stations, we can achie"e costreduction on the power networ+ from
increased networ+ e6ciency and lower power
losses.%1.
8/19/2019 Report on Solar Energy Presentation
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LITERATURE REVIEWED
OBJECTIVE OF STUDY:
To understand the importance of'hoto"oltaic 8olar 9nergy.
% To understands the wor+ing principle of
photo"oltaic cells.
: To understand the e&ect of ambient
temperature on the e6ciency of di&erenta"ailable photo"oltaic modules.
EXPERIMENTAL SET UP AND
METHODOLOGY.
Four commercially a"ailable ') modules such
as 3ono crystalline silicon, 'olycrystalline
silicon, amorphous silicon and #dTe 3odules
are used in this study :1. These 8ilicons were
placed in a test facility established at 8olar
9nergy #entre (89#*, ;ew <elhi under indoor
laboratory condition, where their temperature
coe6cient was e"aluated.
Fig and % represent the large area
(%mx%m* =uic+ 8un 8imulation and
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9n"ironmental Test #hamber. 9ach of the ')
modules was connected with a temperature
sensor and digital multi meter. The
temperature of the modules is increased by
9n"ironmental Test #hamber. /s soon as the
desired temperature is reached, 8hort #ircuit
#urrent, $pen #ircuit #urrent and 'ower
output is measured.
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FI> %? 9;)I@$;39;T/A T98T #/3!9@.
The modules temperature "aried in steps of
approximately 5 degree centigrade o"er arange of interest and +ept for :0 degree
centigrade before the actual measurement.
/lso the di&erent types of modules from the
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"arious manufacturer which are selected
randomly. The 3odule rated capacity "aries
from :B' to :00B'.
The temperature coe6cient of these four
modules are determined according to I9#
standard at an irradiance of 000B3%.C1
The experimental measurement of short
circuit with respect to "arious temperatures
are plotted and least s2uare 4eld cur"e is
obtained. The table "alues and the di&erent
graph for the 3odules are shown in Fig :-5
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8/19/2019 Report on Solar Energy Presentation
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ssssssss
FI> : Temperature #oe6cient of 8hort #ircuit
#urrent (3ono #-8i sample?0wp*
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FI> C Temperature #oe6cient of $pen #ircuit)oltage (3ono #-8i 8ample?0Bp.
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FI> 5? Temperature #oe6cient of 'ower
output (3ono #-8i 8ample? 0Bp *
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The temperature coe6cient for this particular
module is determined by di"iding the slope of
this least s2uare 4t cur"e by the short circuit
at %5 degree centigrade.
The same order of experiment is also
conducted for open circuit "oltage and power
output for e"aluation of temperature
coe6cient respecti"ely.
RESULT AND DISCUSSION:
The coe6cient for short circuit current, open
circuit "oltage and power out are e"aluated
for 3ono crystalline silicon, 3ultiple
crystalline silicon , /morphous silicon and
#dTe based solar modules.
Fig :-5 represent the "ariation in current,
"oltage and power. Bith respect to
temperature to for a mono crystalline silicon
module of 0wp rated capacity.
8imilar +inds of pro4les are obtained for
di&erent rated capacity modules and also for
di&erent types of modules technologies. It can
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be obser"ed from these graphs that a linear
best 4tted straight line has been drawn based
on the experimental measurement.
The temperature coe6cient is the slop of
these best 4tted straight line di"ided by the
"alue of that parameter at %5 degree
centigrade. In similar fashion the temperature
coe6cients are e"aluated for each modules
technology.
Table represents the a"erage temperature
coe6cients of power for mono crystalline
silicon, multiple crystalline silicon
amorphous silicon and #dTe respecti"ely.
The temperature coe6cient of power in monocrystalline silicon "aries from -0.:DC percent
per degree centigrade to -0.CE: percent per
degree centigrade. In case of multiple crystal
line silicon, it "aries from -0.:Epercent per
dgree centigrade to -0.50Gpercent per degree
centigrade with an a"erage of H 0.:Epercent
per degree centigrade. In case of #dTe , only
two samples are measured with "alues of
-0.GE percent per degree centigrade and
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-0.G percent per degree centigrade. In case
of amorphous silicon module only one sample
is measured and the temperature coe6cient
is -0.%:Cpercentper degree centigrade..
It is found from study that the a"erage
temperature coe6cient of power for #dTe
technology is minimum 0.Gpercent degree
centigrade* and maximum for mono
crystalline silicon module (-0.CCGpercent perdegree centigrade*.
This result show that #dTe 8ilicon module will
perform more better in ambient temperature
region compare to other types of silicon
modules. The physics behind this result helps us to
understand the wor+ing principle of
photo"oltaic cell. Bhen solar cells are
exposed to sunlight, electrons excite from the
"alence band to the conduction band creating
charge particles called holes. In one ') cell,
the upper or ;-type layer layser is crystalline
silicon doped with phosphorus of 5 "alence
electrons while the other the lower or '-type
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layer is doped with boron which has : "alence
electron.
!y bringing ; and ' type silicon together a '-; unction ser"es for creating an electric 4eld
within the solar cells which is able to separate
electron and holes and if the accident photons
is energetic enough to discharge "alence
electron, the electron will ump to the
conduction band and initiate the solar cellsthrough the contact.
This e&ecti"e performance of these band
( "alence and conduction band* depends on
the temperature coe6cient of the type of
silicon that build up the ') panel.Ai+e all other semiconductor de"ices, solar
cells are sensiti"e to temperature. Increase in
temperature reduces the band gap of a
semiconductor, thereby a&ecting most of the
semiconductor material parameters. The
decrease in the band gap of a semiconductor
with increasing temperature can be "iewed as
increasing the energy of the electron in the
material. Aower energy is therefore to brea+
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the bond. In the bond model of a
semiconductor band gap, reduction in the
bond energy also reduces the band gap and
in return increasing the energy of the electron
.
In a solar cell, the parameter most a&ected by
an increase in temperature is the open circuit
"oltage. The open circuit "oltage decrease
with temperature because of the temperaturedependence of Io . 51
CONCLUSION
Temperature can a&ect how electron ows
through an electrical circuit by changing the
speed at which the electrons tra"el. This
wor+ help in understanding the "ariation in
power output from a particular ') technology
due to "ariation in operating temperatureonly. 8ince solar panels wor+ best at certain
weather and temperature conditions such as
cold and sunny climate, engineers design
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ways to impro"e the e6ciency of solar panels
that operate in non-optimal temperature
condition. This might in"ol"e designing
cooling systems that use outside air, fans and
pump.
REFERENCES
1 >ri6th .8, @athod ;8, 'aslas+i . some
test of at plate photo"oltaic modules cell
temperatures in simulated 4eld condition .
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%1 <ino >reen une :, %0%. 'ros and #on
of 'hoto"oltaic (')* 'anels-8olar9nergy.
:1 8abnis />, #lemens .T (DD*#haracteri7ation of The 9lectron 3obility in
The In"erter 8i 8urface Int 9lectron <e"ices
3tg E-%
C1 ;elson . The 'hysics of solar cells
('roperties of 8emiconductor materials*
Imperial college press, Aondon, %00:.
51 )arshni J' (DG* Temperature
dependence of the energy gap in
semiconductors 'hysics :C? CD-5C.
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FI> % =KI#L8K; 8I3KA/TI$;8
EUROPEAN
UNIVERSITY OF
LEFKE
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STUDENT NAME: EDWIN OKPAKO
STUDENT NUMBER: 15417
DEPARTMENT: ENVIRONMENTAL SCIENCE
COURSE: RENEWABLE ENERGY !M.S"#
TOPIC: COMPARISON PERFORMANCE
MEASUREMENT OF PHOTOVOLTAIC MODULES
UNDER THE INFLUENCE OF AMBIENTTEMPERATURE.