Research in NoMaD: Nanoelectronic Materials & Devices Research Group

Research in NoMaD: Nanoelectronic Materials & Devices Research Group

Jonathan P. BirdDepartment of Electrical EngineeringUniversity at BuffaloBuffalo, NY 14260, USA

Jonathan P. BirdDepartment of Electrical EngineeringUniversity at BuffaloBuffalo, NY 14260, USA

Nanoelectronics … Although the term

nanotechnology is generally defined as utilizing

technology less than 100 nm in size, nanoelectronics

often refers to transistor devices that are so small

that inter-atomic interactions & quantum

mechanical properties need to be studied

extensively … source: Wikipedia

Presentation OverviewPresentation Overview

Today I will give an overview of some of the research in my group

in the area of nanoelectronics

Today I will give an overview of some of the research in my group

in the area of nanoelectronics

Nanoscale Quantum Transport Phenomena

Spontaneous Spin Polarization in 1D Wires

Transient Transport Phenomena in Nanodevices

Prototype Device DevelopmentNanoscale Terahertz Sensors

Reprogrammable Hybrid Nanomagnetic Devices

Characterization of New NanomaterialsMetallic Nanowires, Carbon Nanotubes

Focused-Beam Nanofabrication Techniques

NoMaD Research in Nanoelectronics: Main ThemesNoMaD Research in Nanoelectronics: Main Themes

INPUT Pulse

OUTPUTPulse

Science 303, 1621 (2004)Phys. Rev. Lett. 92, 096802(2004)Phys. Rev. Lett. 99, 136805 (2007)

Nanoscale Quantum Phenomena: Spin Readout With Nanowires Nanoscale Quantum Phenomena: Spin Readout With Nanowires

500nm

SpinDetector

TrappedSpin

All-Electrical Preparation &Readout of Trapped Single Spin!

Appl. Phys. Lett. 92, 223115 (2008)

Prototype Device Development : Nanoscale Terahertz Sensors Prototype Device Development : Nanoscale Terahertz Sensors

Characterization of New Nanomaterials: Metallic Nanowires Characterization of New Nanomaterials: Metallic Nanowires

Appl. Phys. Lett. 85, 281 (2004)Phys. Rev. B 76, 184404 (2007)

Magneto-Resistance Hysteresis:Surface Magnetism?

• The marriage of ferromagnetic materials with semiconductor devices

offers many potential advantages:

Integration of logic and memory schemes within the framework of

a single hardware

Fast non-volatile memories based on the switching of single

magnetic domains

Reduced power dissipation associated with the storage of non-

volatile memory in magnetic form

Semiconductor approaches lagging far behind metal-

basedtechnology

Semiconductor approaches lagging far behind metal-

basedtechnology

NanomagnetoelectronicsNanomagnetoelectronics

Nanomagnetoelectronics: Mag-FET for Integrated Logic & MemoryNanomagnetoelectronics: Mag-FET for Integrated Logic & Memory

• We are exploring the implementation of a Ferro-FET that adds non-

volatile memory capability to the logic functionality of FETs

This is achieved by using a nanoscale ferromagnet as the gate

and manipulating its magnetic fringe fields to control the current

Nanomagnetoelectronics: Mag-FET for Integrated Logic & MemoryNanomagnetoelectronics: Mag-FET for Integrated Logic & Memory

Hysteretic MR that is strongly enhanced in the threshold regime!

Hysteretic MR that is strongly enhanced in the threshold regime!

Nanomagnetoelectronics: Mag-FET for Integrated Logic & MemoryNanomagnetoelectronics: Mag-FET for Integrated Logic & Memory

• In spite of the promise of these results, there are many issues that

must be overcome in order to implement the Ferro-FET as a viable

technology

Operation temperature must be increased above 300 K

Amplitude of tunneling magneto-resistance must be increased

Convenient means to switch the gate magnetization is needed

…

• Solution of these problems could provide new advances however in

the field of reprogrammable electronics

For More Details, Please See: www.eng.buffalo.edu/~jbirdFor More Details, Please See: www.eng.buffalo.edu/~jbird