RFMD® Foundry Services

RFMD Foundry Services

World’s Largest III-V Electronics Manufacturer

Two high volume Fabs for unlimited capacity

Starts >25% of the world’s GaAs wafers

Industry-leading cycle time

Foundry Services from the Leader

20 Years of Leadership in III-V Manufacturing

World-Class Technologies

GaAs

GaN

MBE

UHV Parts Cleaning

Experienced Support Teams

Process and Device Engineering

Quality

Supply Chain

CAD

•RFMD qualifies GaN1 high power process technology for 65V operation

•Two additional GaAs pHEMT process technologies are now available

• Low noise GaAs pHEMT

• Switch GaAs pHEMT

Foundry Services Latest News

Equipped to Support Customer Needs

GaAs HBT GaAs pHEMT

RFMD Greensboro, USA

RFMD Newton-Aycliffe, UK

GaAs HBT GaAs pHEMT GaN MBE UHV Parts Cleaning

Industry-Leading Cycle Time from RFMD

RFMD PrototypeRFMD Production

Foundry BFoundry C

Foundry D

Cycle Times – Industry Averages

Cycle Times (wks) 0 2 4 6 8 10 12 14

Foundry Services

*Time from receipt of DRC clean layout file to delivery of standard processed wafers/die

•RFMD’s best-in-class cycle time is backed by our on-time pledge

•Prototype and shuttle lot cycle time = 6 weeks*

•Production lot cycle time = 6 weeks*

The Best Technology Available

Same process technologies used for RFMD products

Robust technology roadmap for GaN and GaAs New process technologies available immediately

upon production release

Technologies to support long product lifetimes

Available Foundry Technology

GaN

GaN1 = High Power GaN2 = High Linearity

GaAs FD30 = Power GaAs pHEMT FD25 = Low noise GaAs pHEMT FET-1H = Switch GaAs pHEMT IPC3 = High Power Integrated

Passive Components

MBE GaAs InGaAs AlGaAs InGaP AlInP

UHV Parts Cleaning Standard and custom services

RFMD GaN Process Technologies

High Power

GaN1

Key Attributes• 36V – 65V operation• High power density• High peak efficiency• High breakdown voltage (400V)

• Technology developed and manufactured in the US

High Linearity

GaN2

Key Attributes• 15V – 48V operation• High linearity (6dB improvement)• Low Cgs variation• Low threshold voltage• Technology developed and

manufactured in the US

High Power with Optimized Linearity

GaN3

Key Attributes• 36V – 65V operation• Improved linearity• Reduced IDQ drift

• High peak efficiency• Currently in development

Target Applications• Military (EW, radar, milcom)• Civilian (ATC, radar, cellular

infrastructure)

Target Applications• Broadband handheld radios (PMR)• CATV• ISM

Target Markets• Cellular infrastructure• Public mobile radio• Next generation military radio

Reliability• EA = 2.1eV

• MTTF = 1.1x107 Hrs @ TCHANNEL= 200

oC

Reliability• EA = 2.1eV

• MTTF = 1.8x107 Hrs @ TCHANNEL= 200

oC

Reliability• EA = 1.5eV

• MTTF > 107 Hrs @ TCHANNEL = 200

oC

18 19 20 21 22 23 24 25 26 27 2810

0

102

104

106

108

1010

1/kT

MT

TF

350 325 300 275 250 225 200 175 150

Arrhenius plot of lifetest failure dataTch (C)

18 19 20 21 22 23 24 25 26 27 2810

0

102

104

106

108

1010

1/kT

MT

TF

350 325 300 275 250 225 200 175 150

Arrhenius plot of lifetest failure dataTch (C)

RFMD GaN1High Power

RFMD GaN2High Linearity

Reliability Test Results

Sample Size

GaN1High Power

GaN2High Linearity

Total Devices 293 220

Wafers 18 10

Fab Lots 6 4

Epi Vendors 1 1

Number of Temperatures

6 5

Results

GaN1High Power

GaN2High Linearity

MTTF 1.1E7 1.8E7 Hrs

Ea 2.1 2.1 eV

TCHANNEL 200 200 ºC

VDS 48 48 V

GaN High Temperature Reliability Test

Reliability Test Results

Sample size

GaN1High Power

Total Devices 188

Wafers 14

Fab Lots 5

Epi Vendors 1

Number of Temperatures

5

Results

GaN1High Power

MTTF 7E7 Hrs

Ea 2.4 eV

TCHANNEL 200 ºC

VDS 65 V

GaN New 65V Qualification

18 20 22 24 26 2810

0

102

104

106

108

1010

1/kT

MT

TF

350 325 300 275 250 225 200 175 150Tch (C)

RFMD GaN1High Power

RFMD GaAs Process Technologies

Low Noise pHEMT

FD25

Key Attributes• 7V operation• fT= 50GHz

• NFMIN < 0.8dB @ 10GHz

• Technology developed and manufactured in UK

Power pHEMT

FD30

Key Attributes• 10 V operation• fT= 30GHz

• High power, efficiency• Technology developed and

manufactured in UK

Switch pHEMT

FET1H

Key Attributes• 7V operation• High linearity switch• Low noise• Technology developed in US;

manufactured in US and UK

Target Applications• Military (phased arrays, T/R module)• Wireless front ends• MMICs

Target Applications• Military (phased arrays, EW)• Infrastructure

Target Markets• Wireless front ends• Transmit/receive • Phased arrays

Reliability• EA = 1.4 eV

• MTTF=5.6 x 106 Hrs

Reliability• EA = 1.7 eV

• MTTF=4.4 x 106 Hrs @150°

Reliability• EA = 2.4eV

• MTTF=1.3 x 1011 Hrs @ 150°

Reliability Test Results

Results

FD25 Low Noise pHEMT

FD30Power pHEMT

Number of Temperatures

3 3

MTTF 5.6E6 4.4E6 Hrs

Ea 1.4 1.7 eV

TCHANNEL 150 150 ºC

VDS 8 10 V

IDS 130 140 mA

275250225200175150

10000000

1000000

100000

10000

1000

100

Temp_FD25 TXYZ

Tim

e t

o F

ail_

FD25 T

XYZ

60Percentiles

Relation Plot (Fitted Arrhenius) for Time to Fail_FD25 TXYZ

Complete Data - ML EstimatesLognormal - 60% CI

Arrhenius plots 10%

y = 20208x - 32.467

0

2

4

6

8

10

12

14

16

18

20

311 280 250 225 200 180 160 142 1251/T(K)

Ln

TT

F

RFMD FD25Low Noise pHEMT

RFMD FD30Power pHEMT

GaAs High Temperature Reliability Test

MBE Foundry Services

RFMD foundry services offers multiple MolecularBeam Epitaxy (MBE) platforms, Epi characterization, and experienced staffing to help develop your epitaxial structures.

Specialty and high-volume, arsenic and phosphorus-based processes

Accessible staff to design an epilayer structure and MBE process

Optimize the performance of your existing epistructure

MBE Foundry Services

Gallium arsenide (GaAs)

Aluminum gallium arsenide (AlGaAs)

Indium gallium phosphide (InGaP)

Aluminum indium phosphide (AlInP)

MBE Foundry Services

Indium gallium arsenide (InGaAs)

Material Offerings on GaAs Substrates

Available MBE systems include

Veecco Gen2K (7 x 6")

Riber R7000 (7 x 6")

Riber R6000 (4 x 6”) – VG100 (1x6”)

Growth Capabilities

Low-temperature growth capability

• In-situ monitoring for temperature, layer thickness, and growth rate control

• Extensive characterization including Lehighton, Surfscan, Xray, Multifield Hall, Photoluminescence, and AFM

• Flexible accommodation: 4" and 6" wafer sizes are standard

MBE Foundry Services

RFMD foundry services offers an extensive range of capabilities allowing for custom-designed procedures to meet your cleaning needs.

UHV Parts Cleaning Services

Before After

UHV Parts Cleaning Services

Before

Before

After

After

RFMD foundry services offers an extensive rangeof capabilities allowing for custom-designed proceduresto meet your cleaning needs.

Wet cleaning capabilities

Types of parts cleaned: stainless steel, refractory metal and PBN ceramic parts

Standard and custom-cleaning procedures available

UHV Parts Cleaning Services

Tool kit for circuit design and layout ADS and AWR process design kits

Comprehensive design rules and technology documentation

How-to user guides

Tracking information WIP tracking

PCM data

Individual customer collaboration sites for convenient data exchange

Secured Customer Website

World-Class Customer Service

Guaranteed cycle time

On-Time Shipment Pledge

Foundry services team Technology

CAD

Business

Customer service support

Dedicated RFMD Teamis Working for You

VOLUME MANUFACTURER with FLEXIBLE SCALE

Foundry Services from the Leader

To learn more about RFMD Foundry Services, visit us at

www.RFMD.com/Foundry