SHD4101 - Power MOSFET Module...Peak Repetitive Reverse Voltage V RSM 200 V Repetitive Reverse Voltage V RM 200 V Average Forward Current I F(AV) 5 A Surge Forward Current I FSM Half

Power MOSFET Module

SHD4101 Data Sheet

SHD4101-DSE Rev.1.0 SANKEN ELCTRIC CO., LTD. 1 Oct. 03, 2018 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016

Description

The SHD4101 includes four elements (two each of

single and dual fast recovery diodes, two N-channel

power MOSFETs) in its small HSON package. The

internal power MOSFETs have Zener diodes between

gates and sources, thus requiring no externally clamped

circuit for an injection coil drive circuit. Supplied in a

low thermal resistance package, the product achieves

high performance in heat dissipation.

Features

● Suitable for High Reliability Applications

● Complies with Automotive Quality Requirements

● AEC-Q101 Qualified

● Bare Lead Frame: Pb-free (RoHS Compliant)

● Built-in Zener Diodes between Gates and Sources

● Specifications

Element 1: Single Fast Recovery Diode (200 V, 5 A)

Element 2: Dual Fast Recovery Diodes (200 V, 3 A)

Element 3: N-channel Power MOSFET (100 V, 10 A)

Element 4: N-channel Power MOSFET (40 V, 10 A)

Typical Application

● Solenoid Injection System

DC/DC

Control

SHD4101

SHD4102

Package

● HSON-20

Not to scale

Internal Schematic Diagram

10

8

12

15

17

13

S

GG

S

3

A

A

C

A

5

7

20

2

Element 1

1 4

C C C

C6

9 D

11DDD

14D

16D

Element 2

Element 3Element 418

19

NC

C

A: Diode Anode

C: Diode Cathode

D: Power MOSFET Drain

S: Power MOSFET Source

G: Power MOSFET Gate

NC: No Connection

Applications

● Injection Coil Driver Circuits

https://www.sanken-ele.co.jp/en

SHD4101


Contents

Description ------------------------------------------------------------------------------------------------------ 1

Contents --------------------------------------------------------------------------------------------------------- 2

1. Absolute Maximum Ratings (All Elements Common) --------------------------------------------- 3

2. Thermal Characteristics --------------------------------------------------------------------------------- 3

3. Absolute Maximum Ratings and Electrical Characteristics -------------------------------------- 3 3.1. Element 1 (200 V, 5 A Fast Recovery Diode)--------------------------------------------------- 3

3.1.1. Absolute Maximum Ratings ----------------------------------------------------------------- 3 3.1.2. Electrical Characteristics -------------------------------------------------------------------- 3 3.1.3. Characteristic Curves ------------------------------------------------------------------------ 4

3.2. Element 2 (200 V, 3 A Fast Recovery Diode)--------------------------------------------------- 5 3.2.1. Absolute Maximum Ratings ----------------------------------------------------------------- 5 3.2.2. Electrical Characteristics -------------------------------------------------------------------- 5 3.2.3. Characteristic Curves ------------------------------------------------------------------------ 5

3.3. Element 3 (100 V, 10 A Power MOSFET) ------------------------------------------------------ 6 3.3.1. Absolute Maximum Ratings ----------------------------------------------------------------- 6 3.3.2. Electrical Characteristics -------------------------------------------------------------------- 6 3.3.3. Rating and Characteristic Curves --------------------------------------------------------- 7

3.4. Element 4 (40 V, 10 A Power MOSFET) ----------------------------------------------------- 11 3.4.1. Absolute Maximum Ratings --------------------------------------------------------------- 11 3.4.2. Electrical Characteristics ------------------------------------------------------------------ 11 3.4.3. Rating and Characteristic Curves ------------------------------------------------------- 12

3.5. Test Circuits and Waveforms ------------------------------------------------------------------- 16

4. Pin Configuration Definitions ------------------------------------------------------------------------- 17

5. Physical Dimensions ------------------------------------------------------------------------------------ 18 5.1. HSON-20 Package --------------------------------------------------------------------------------- 18 5.2. Land Pattern Example --------------------------------------------------------------------------- 19

6. Marking Diagram --------------------------------------------------------------------------------------- 19

Important Notes ---------------------------------------------------------------------------------------------- 20


SHD4101


1. Absolute Maximum Ratings (All Elements Common)

Parameter Symbol Conditions Rating Unit

Power Dissipation PD

TC = 25 °C, all elements operating;

mounted on an FR4 board

(26 mm × 36 mm × 1.66 mm)

1.7 W


with an infinite heatsink 80 W

Junction Temperature TJ 150 °C

Storage Temperature TSTG −55 to 150 °C

2. Thermal Characteristics

Parameter Symbol Conditions Min. Typ. Max. Unit

Thermal Resistance

(Junction-to-Case) RθJC


with an infinite heatsink — — 6.25 °C/W

3. Absolute Maximum Ratings and Electrical Characteristics

3.1. Element 1 (200 V, 5 A Fast Recovery Diode)

3.1.1. Absolute Maximum Ratings

Unless otherwise specified, TA = 25 °C.


Peak Repetitive Reverse Voltage VRSM 200 V

Repetitive Reverse Voltage VRM 200 V

Average Forward Current IF(AV) 5 A

Surge Forward Current IFSM Half cycle sine wave,

positive side, 10 ms, 1 shot 30 A

I2t Limiting Value I

2t t ≤ 30 μs, duty cycle ≤ 1% 4.5 A

2s

3.1.2. Electrical Characteristics



Forward Voltage Drop VF TJ = 25 °C, IF = 5 A — — 1 V

Reverse Leakage Current IR VR = VRM — — 50 µA

Reverse Leakage Current

under High Temperature H∙IR VR = VRM, TJ = 150 °C — — 300 µA

Reverse Recovery Time trr

IF = IRP = 100 mA,

90% recovery point,

TJ = 25 °C

— — 50 ns


SHD4101


3.1.3. Characteristic Curves

Figure 3-1. Element 1 Typical Characteristics:

VF vs. IF


VR vs. IR

0.001

0.01

0.1

1

10

0.0 0.5 1.0 1.5

Fo

rwar

d C

urr

ent,

IF

(A

)

Forward Voltage, VF (V)

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

0 50 100 150 200

Rev

erse

Curr

ent,

IR (

A)

Reverse Voltage, VR (V)

TJ = 125 °C

TJ = 25 °C

TJ = 25 °C

TJ = 75 °C

TJ = 150 °C

TJ = 75 °C

TJ = 150 °C


SHD4101


3.2. Element 2 (200 V, 3 A Fast Recovery Diode)




Peak Repetitive Reverse Voltage VRSM 200 V

Repetitive Reverse Voltage VRM 200 V

Average Forward Current IF(AV) 3 A

Surge Forward Current IFSM Half cycle sine wave,

positive side, 10 ms, 1 shot 30 A

I2t Limiting Value I

2t t ≤ 30 μs, duty cycle ≤ 1% 4.5 A

2s




Forward Voltage Drop VF TJ = 25 °C, IF = 3 A — — 1 V

Reverse Leakage Current IR VR = VRM — — 50 µA

Reverse Leakage Current

under High Temperature H∙IR VR = VRM, TJ = 150 °C — — 300 µA

Reverse Recovery Time trr

IF = IRP = 100 mA,

90% recovery point,

TJ = 25 °C

— — 50 ns

3.2.3. Characteristic Curves


VF vs. IF


VR vs. IR

0.001

0.01

0.1

1

10

0.0 0.5 1.0 1.5

Fo

rwar

d C

urr

ent,

IF

(A

)

Forward Voltage, VF (V)

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

0 50 100 150 200

Rev

erse

Curr

ent,

IR (

A)

Reverse Voltage, VR (V)

TJ = 125 °C

TJ = 25 °C

TJ = 25 °C

TJ = 75 °C

TJ = 150 °C

TJ = 75 °C

TJ = 150 °C


SHD4101


3.3. Element 3 (100 V, 10 A Power MOSFET)




Drain-to-Source Voltage VDS 100 V

Gate-to-Source Voltage VGS ±20 V

Continuous Drain Current ID TC = 25 °C 10 A

Pulsed Drain Current IDM t ≤ 30 µs, duty cycle ≤ 1 % 30 A

Single Pulse Avalanche Energy EAS

VDD = 14 V, L = 1.08 mH,

ID = 10 A, unclamped,

RG = 50 Ω;

see Figure 3-35

62.5 mJ

Avalanche Current IAS 10 A

Drain-to-Source dv/dt 1 dv/dt 1 See Figure 3-35 0.6 V/ns

Peak Diode Recovery dv/dt 2 dv/dt 2 See Figure 3-36 5 V/ns

Peak Diode Recovery di/dt di/dt See Figure 3-36 100 A/µs




Drain-to-Source Breakdown Voltage V(BR)DSS ID = 100 μA, VGS = 0 V 100 — — V

Drain-to-Source Leakage Current IDSS VDS = 100 V, VGS = 0 V — — 100 µA

Gate-to-Source Leakage Current IGSS VGS = ± 15 V — — ± 10 µA

Gate Threshold Voltage VGS(th) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V

Forward Transconductance gfs VDS = 10 V, ID = 5 A 9 — — S

Static Drain-to-Source On-resistance RDS(ON) ID = 5 A, VGS = 10 V — 38 50 mΩ

Input Capacitance Ciss VDS = 10 V,

VGS = 0 V,

f = 1 MHz

— 2200 —

pF Output Capacitance Coss — 210 —

Reverse Transfer Capacitance Crss — 110 —

Total Gate Charge Qg VDD = 50 V,

ID = 5 A,

VGS = 10 V,

RL = 10 Ω

— 45 —

nC Gate-to-Source Charge Qgs — 6 —

Gate-to-Drain Charge Qgd — 10 —

Turn-on Delay Time td(on) VDD = 50 V,

ID = 5 A,

VGS = 10 V, RG = 20 Ω,

RL = 10 Ω;

see Figure 3-37

— 30 —

ns Rise Time tr — 40 —

Turn-off Delay Time td(off) — 160 —

Fall Time tf — 80 —

Source-to-Drain Diode Forward

Voltage VSD IS = 10 A, VGS = 0 V — — 1.2 V

Source-to-Drain Diode Reverse

Recovery Time trr

IF = 10 A,

di/dt = 100 A/µs;

see Figure 3-36 — 50 — ns


SHD4101


3.3.3. Rating and Characteristic Curves

Figure 3-5. Element 3: Safe Operating Area Figure 3-6. Element 3: Power Dissipation vs. Case

Temperature

Figure 3-7. Element 3: Output Characteristics

(TJ = 25 °C)

Figure 3-8. Element 3: Transfer Characteristics

0.1

1

10

100

1 10 100 1000

Dra

in C

urr

ent,

ID (

A)

Drain–Source Voltage, VDS (V)

MOSFET,

single pulse,

TJ = 25 °C

0

20

40

60

80

100

0 25 50 75 100 125 150

Po

wer

Dis

sip

atio

n,

PD (

W)

Case Temperature, TC (°C)

With infinite heatsink

Mounted on FR4 board

(26 mm × 36 mm × 1.66 mm)

0

5

10

15

20

0 0.5 1 1.5

Dra

in C

urr

ent,

ID (

A)


0

5

10

15

20

0 1 2 3 4 5

Dra

in C

urr

ent,

ID (

A)

Gate–Source Voltage, VGS (V)

VDS = 10 V

100 µs

1 ms

VGS = 4.5 V

VGS = 10 V

TJ = −55 °C

TJ = 25 °C

TJ = 150 °C VGS = 3.0 V

VGS = 3.5 V


SHD4101


Figure 3-9. Element 3: Drain Current vs. Case

Temperature

Figure 3-10. Element 3: Gate Threshold Voltage vs.

Junction Temperature

Figure 3-11. Element 3: Drain–Source On-resistance vs.

Drain Current



0

2

4

6

8

10

12

0 25 50 75 100 125 150

Dra

in C

urr

ent,

ID (

A)


0.5

1

1.5

2

2.5

-100 -50 0 50 100 150 200 G

ate

Th

resh

old

Vo

ltag

e,V

th (

V)

Junction Temperature, TJ (°C)

VDS = 10 V,

ID = 1 mA

0

10

20

30

40

50

60

0 5 10 15 20

Dra

in–

So

urc

e O

n-r

esis

tance

, R

DS

(on) (m

Ω）

Drain Current, ID (A)

VGS = 10 V,

TJ = 25 °C

0

20

40

60

80

100

-100 -50 0 50 100 150 200

Dra

in–

So

urc

e O

n-r

esis

tance

, R

DS

(on) (m

Ω)


VGS = 10 V,

ID = 5 A


SHD4101


Figure 3-13. Element 3: Forward Diode Characteristics Figure 3-14. Element 3: Capacitance Characteristics

Figure 3-15. Element 3: Drain–Source Breakdown

Voltage vs. Junction Temperature

Figure 3-16. Element 3: Typical Gate Charge

0

5

10

15

20

0 0.5 1 1.5

So

urc

e–D

rain

Curr

ent,

IS

D (

A)

Source–Drain Diode Forward Voltage, VSD

(V)

VGS = 0 V

10

100

1000

10000

0 10 20 30 40 50 C

apac

itan

ce (

pF

)


f = 1 MHz,

VGS = 0 V

90

100

110

120

130

140

-100 -50 0 50 100 150 200

Dra

in–

So

urc

e B

reak

do

wn

Vo

ltag

e, V

(BR

)DS

S (

V)


ID = 10 mA,

VGS = 0 V

0

2

4

6

8

10

0 10 20 30 40 50

Gat

e–S

ourc

e V

olt

age,

VG

S (

V)

Gate Charge, Qg (nC)

ID = 5 A,

VDD ≈ 50 V

TJ = −55 °C

TJ = 25 °C

TJ = 150 °C

Ciss

Coss

Crss


SHD4101


Figure 3-17. Element 3: Typical Avalanche Energy Figure 3-18. Element 3: Transfer Characteristics

Figure 3-19. Element 3: Transient Thermal Resistance

0

10

20

30

40

50

60

70

25 50 75 100 125 150

Sin

gle

Puls

e A

val

anch

e E

ner

gy,

EA

S (

mJ)


0

0.2

0.4

0.6

0.8

1

0 5 10 15 20 D

rain

–S

ourc

e V

olt

age,

VD

S (

V)


VDS = 10 V

0.01

0.1

1

10

Ther

mal

Res

ista

nce

(°C

/W)

Pulse Width (s)

Single pulse,

VDS < 10 V

100 μ 1 m 10 m 100 m 1 10

ID = 10 A

ID = 5 A


SHD4101


3.4. Element 4 (40 V, 10 A Power MOSFET)




Drain-to-Source Voltage VDS 40 V

Gate-to-Source Voltage VGS ±20 V

Continuous Drain Current ID TC = 25 °C 10 A

Pulsed Drain Current IDM t ≤ 30 µs, duty cycle ≤ 1 % 30 A

Single Pulse Avalanche Energy EAS

VDD = 14 V, L = 0.4 mH,

ID = 10 A, unclamped,

RG = 50 Ω;

see Figure 3-35

30.5 mJ

Avalanche Current IAS 10 A

Drain-to-Source dv/dt 1 dv/dt 1 See Figure 3-35 0.2 V/ns

Peak Diode Recovery dv/dt 2 dv/dt 2 See Figure 3-36 2 V/ns

Peak Diode Recovery di/dt di/dt See Figure 3-36 100 A/µs




Drain-to-Source Breakdown Voltage V(BR)DSS ID = 100 μA, VGS = 0 V 40 — — V

Drain-to-Source Leakage Current IDSS VDS = 40V, VGS = 0 V — — 100 µA

Gate-to-Source Leakage Current IGSS VGS = ± 15 V — — ± 10 µA

Gate Threshold Voltage VGS(th) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V

Forward Transconductance gfs VDS = 10 V, ID = 5 A 5 — — S

Static Drain to Source On-resistance RDS(ON) ID = 5 A, VGS = 10 V — 15 21 mΩ

Input Capacitance Ciss VDS = 10 V,

VGS = 0 V,

f = 1 MHz

— 1200 —

pF Output Capacitance Coss — 310 —

Reverse Transfer Capacitance Crss — 170 —

Total Gate Charge Qg VDD = 20 V,

ID = 5 A,

VGS = 10 V,

RL = 4 Ω

— 25 —

nC Gate-to-Source Charge Qgs — 3 —

Gate-to-Drain Charge Qgd — 6 —

Turn-on Delay Time td(on) VDD = 20 V,

ID = 5 A,

VGS = 10 V, RG = 20 Ω,

RL = 4 Ω;

see Figure 3-37

— 15 —

ns Rise Time tr — 35 —

Turn-off Delay Time td(off) — 100 —

Fall Time tf — 50 —

Source-to-Drain Diode Forward

Voltage VSD IS = 10 A, VGS = 0 V — — 1.2 V

Source-to-Drain Diode Reverse

Recovery Time trr

IF = 10 A,

di/dt = 100 A/µs;

see Figure 3-36 — 50 — ns


SHD4101


3.4.3. Rating and Characteristic Curves

Figure 3-20. Element 4: Safe Operating Area Figure 3-21. Element 4: Power Dissipation vs. Case

Temperature

Figure 3-22. Element 4: Output Characteristics

(TJ = 25 °C)

Figure 3-23. Element 4: Transfer Characteristics

0.1

1

10

100

1 10 100

Dra

in C

urr

ent,

ID (

A)


MOSFET,

single pulse,

TJ = 25 °C

0

20

40

60

80

100

0 25 50 75 100 125 150

Po

wer

Dis

sip

atio

n,

PD (

W)


With infinite heatsink

Mounted on FR4 board

(26 mm × 36 mm × 1.66 mm)

0

5

10

15

20

0 0.5 1 1.5

Dra

in C

urr

ent,

ID (

A)


0

5

10

15

20

0 1 2 3 4 5

Dra

in C

urr

ent,

ID (

A)


VDS = 10 V

100 µs

1 ms

TJ = −55 °C

TJ = 25 °C

TJ = 150 °C VGS = 3.0 V

VGS = 3.2 V

VGS = 3.4 V

VGS = 3.6 V

VGS = 4.0 V

VGS = 10 V


SHD4101


Figure 3-24. Element 4: Drain Current vs. Case

Temperature

Figure 3-25. Element 4: Gate Threshold Voltage vs.



Drain Current



0

2

4

6

8

10

12

0 25 50 75 100 125 150

Dra

in C

urr

ent,

ID (

A)


1

1.5

2

2.5

3

-100 -50 0 50 100 150 200 G

ate

Th

resh

old

Vo

ltag

e,V

th (

V)

at

VD

S =

10

V, I D

= 1

mA


VDS = 10 V,

ID = 1 mA

0

5

10

15

20

25

0 5 10 15 20

Dra

in–

So

urc

e O

n-r

esis

tance

, R

DS

(on) (m

Ω）

Drain Current, ID (A)

VGS = 10 V,

TJ = 25 °C

0

10

20

30

40

-100 -50 0 50 100 150 200

Dra

in–

So

urc

e O

n-r

esis

tance

, R

DS

(on) (m

Ω)


VGS = 10 V,

ID = 5 A


SHD4101


Figure 3-28. Element 4: Forward Diode Characteristics Figure 3-29. Element 4: Capacitance Characteristics

Figure 3-30. Element 4: Drain–Source Breakdown

Voltage vs. Junction Temperature

Figure 3-31. Element 4: Typical Gate Charge

0

5

10

15

20

0 0.5 1 1.5

So

urc

e–D

rain

Curr

ent,

IS

D (

A)

Source–Drain Diode Forward Voltage, VSD

(V)

VGS = 0 V

10

100

1000

10000

0 10 20 30 40 C

apac

itan

ce (

pF

)


f = 1 MHz,

VGS = 0 V

30

35

40

45

50

55

60

-100 -50 0 50 100 150 200

Dra

in–

So

urc

e B

reak

do

wn

Vo

ltag

e,V

(BR

)DS

S (

V)


ID = 10 mA,

VGS = 0 V

0

2

4

6

8

10

0 5 10 15 20 25

Gat

e–S

ourc

e V

olt

age,

VG

S (

V)

Gate Charge, Qg (nC)

ID = 5 A,

VDD ≈ 20 V

TJ = −55 °C

TJ = 25 °C

TJ = 150 °C

Ciss

Coss

Crss


SHD4101


Figure 3-32. Element 4: Typical Avalanche Energy Figure 3-33. Element 4: Transfer Characteristics

Figure 3-34. Element 4: Transient Thermal Resistance

0

5

10

15

20

25

30

35

25 50 75 100 125 150

Sin

gle

Puls

e A

val

anch

e E

ner

gy,

EA

S (

mJ)


0

0.2

0.4

0.6

0.8

1

0 5 10 15 20 D

rain

–S

ourc

e V

olt

age,

VD

S (

V)


VDS = 10 V

0.01

0.1

1

10

Ther

mal

Res

ista

nce

(°C

/W)

Pulse Width (s)

Single pulse,

VDS < 10 V

100 μ 1 m 10 m 100 m 1 10

ID = 10A

ID = 5A


SHD4101


3.5. Test Circuits and Waveforms

VDD

ID

VDS

RG

VGS

0 V

L

VDS

ID

IAS

t

t

V(BR)DSS

VDD

dv/dt 1

(a) Test Circuit (b) Waveforms

Figure 3-35. Unclamped Inductive Test Circuit and Switching Time Waveforms

VGS

0 V

IF

RG

L

D.U.T.

VDD

0

IF

trr

di/dt

IRM × 90 %

IRM

0

VSD

VDD

dv/dt 2


Figure 3-36. Diode Reverse Recovery Time

VDS

VDDRG

RL

VGS

0 V

P.W. = 10 μs

Duty cycle ≤ 1 %

td(on) tr

ton

td(off) tf

toff

90%

10%

90%

10%

VGS

VDS

0

0


Figure 3-37. Resistive Load Test Circuit and Switching Time Waveforms


SHD4101


4. Internal Schematic Diagram

10

8

12

15

17

13

S

GG

S

3

A

A

C

A

5

7

20

2

Element 1

1 4

C C C

C6

9 D

11DDD

14D

16D

Element 2

Element 3Element 418

19

NC

C

5. Pin Configuration Definitions

Pin Number Description Pin Number Description

1 Element 1 cathode 11 Element 3 drain




5 Element 2 anode 15 Element 4 gate


7 Element 2 anode 17 Element 4 source

8 Element 3 source 18 No connection

9 Element 3 drain 19 Element 1 cathode

10 Element 3 gate 20 Element 1 anode

1 2 3 4

14 13 12 11

10

9

8

7

6

5

15

16

17

18

19

20

4 3 2 1

11 12 13 14

10

9

8

7

6

5

15

16

17

18

19

20


SHD4101


6. Physical Dimensions

6.1. HSON-20 Package

±0.2

±0.2

±0.2

±0.2

0.25

1.5

2.140.4 0.4

4.680.4 0.4

0.8

3.6

0.4

0.4

5.6

0.8

0.8

0.7

3.3

3.3

0.7

3.3 3.3

0.8

0.8

*

*

*

*

**

*

* *

±0.05

11.3

11.9

8.5

9.1

*

0.5 (min.) 0.5 (min.)

0.55(min.)

0.55

(min.)

0.55(min.)

0.55(min.)

NOTES:

- Dimensions in millimeters

- Bare lead frame: Pb-free (RoHS compliant)

- Dimensions with the asterisks do not include any mold flash.

- depicts the area where one or more mold flashes similar in thickness to that of the frame may exist.

- Dimensions without tolerances have a tolerance of ±0.1.

- When soldering the products, it is required to minimize the working time within the following limits:

Reflow

Preheat: 180 °C / 90 ± 30 s

Solder heating: 250 °C / 10 ± 1s, 2 times (260 °C peak)

Soldering iron: 380 ± 10 °C / 3.5 ± 0.5 s, 1 time

- The following pins are not guaranteed to be connected by soldering: 6, 9, 16, and 19.


SHD4101


6.2. HSON-20 Land Pattern Example

00.270.35

1.33

2.67

3.733.75

4.9

−0.27−0.35

−1.33

−2.67

−3.73−3.75

−4.9

6.3

5.0

5

3.7

5

2.8

4

2.2

4

1.5

7

0.9

7

0.3

50−

0.3

5

−0

.97

−1

.57

−2

.24

−2

.84

−3

.75

−5

.05

−6

.3

NOTE:

- Dimensions in millimeters

7. Marking Diagram

Part NumberS H D 4 1 0 1

Lot Number:

Y is the last digit of the year of manufacture (0 to 9)

M is the month of the year (1 to 9, O, N, or D)

DD is the day of the month (01 to 31)

X is the control number

Y M D D X

Pin 1 indicator


SHD4101


Important Notes

● All data, illustrations, graphs, tables and any other information included in this document (the “Information”) as to Sanken’s

products listed herein (the “Sanken Products”) are current as of the date this document is issued. The Information is subject to any

change without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales

representative that the contents set forth in this document reflect the latest revisions before use.

● The Sanken Products are intended for use as components of electronic equipment or apparatus (transportation equipment and its

control systems, home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the

Sanken Products, please put your signature, or affix your name and seal, on the specification documents of the Sanken Products

and return them to Sanken. If considering use of the Sanken Products for any applications that require higher reliability (traffic

signal control systems or equipment, disaster/crime alarm systems, etc.), you must contact a Sanken sales representative to discuss

the suitability of such use and put your signature, or affix your name and seal, on the specification documents of the Sanken

Products and return them to Sanken, prior to the use of the Sanken Products. The Sanken Products are not intended for use in any

applications that require extremely high reliability such as: aerospace equipment; nuclear power control systems; and medical

equipment or systems, whose failure or malfunction may result in death or serious injury to people, i.e., medical devices in Class

III or a higher class as defined by relevant laws of Japan (collectively, the “Specific Applications”). Sanken assumes no liability or

responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, resulting from

the use of the Sanken Products in the Specific Applications or in manner not in compliance with the instructions set forth herein. ● In the event of using the Sanken Products by either (i) combining other products or materials or both therewith or (ii) physically,

chemically or otherwise processing or treating or both the same, you must duly consider all possible risks that may result from all

such uses in advance and proceed therewith at your own responsibility. ● Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the

occurrence of any failure or defect or both in semiconductor products at a certain rate. You must take, at your own responsibility,

preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which

the Sanken Products are used, upon due consideration of a failure occurrence rate and derating, etc., in order not to cause any

human injury or death, fire accident or social harm which may result from any failure or malfunction of the Sanken Products.

Please refer to the relevant specification documents and Sanken’s official website in relation to derating. ● No anti-radioactive ray design has been adopted for the Sanken Products. ● The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples, all

information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of

use of the Sanken Products. ● Sanken assumes no responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third

party, or any possible infringement of any and all property rights including intellectual property rights and any other rights of you,

users or any third party, resulting from the Information. ● No information in this document can be transcribed or copied or both without Sanken’s prior written consent.

● Regarding the Information, no license, express, implied or otherwise, is granted hereby under any intellectual property rights and

any other rights of Sanken. ● Unless otherwise agreed in writing between Sanken and you, Sanken makes no warranty of any kind, whether express or implied,

including, without limitation, any warranty (i) as to the quality or performance of the Sanken Products (such as implied warranty

of merchantability, and implied warranty of fitness for a particular purpose or special environment), (ii) that any Sanken Product is

delivered free of claims of third parties by way of infringement or the like, (iii) that may arise from course of performance, course

of dealing or usage of trade, and (iv) as to the Information (including its accuracy, usefulness, and reliability). ● In the event of using the Sanken Products, you must use the same after carefully examining all applicable environmental laws and

regulations that regulate the inclusion or use or both of any particular controlled substances, including, but not limited to, the EU

RoHS Directive, so as to be in strict compliance with such applicable laws and regulations. ● You must not use the Sanken Products or the Information for the purpose of any military applications or use, including but not

limited to the development of weapons of mass destruction. In the event of exporting the Sanken Products or the Information, or

providing them for non-residents, you must comply with all applicable export control laws and regulations in each country

including the U.S. Export Administration Regulations (EAR) and the Foreign Exchange and Foreign Trade Act of Japan, and

follow the procedures required by such applicable laws and regulations. ● Sanken assumes no responsibility for any troubles, which may occur during the transportation of the Sanken Products including

the falling thereof, out of Sanken’s distribution network. ● Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is

error free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting

from any possible errors or omissions in connection with the Information. ● Please refer to our official website in relation to general instructions and directions for using the Sanken Products, and refer to the

relevant specification documents in relation to particular precautions when using the Sanken Products.

● All rights and title in and to any specific trademark or tradename belong to Sanken and such original right holder(s).

DSGN-AEZ-16003


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