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CMC Model / Reliability API

Colin ShawAPI Working Group Chair

June 10, 2014

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Why is CMC Developing an API?

• Enhancements to standard CMC models are often needed– Model Accuracy Improvements– Ease-of-use Improvements– Enhanced Capabilities (e.g. Aging Simulation)

• A standard API for these enhancements allows– distribution in binary form (protection of vendor IP)– access that is EDA-vendor and Foundry neutral– simplicity for the designer

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Compact Models:•Planar Bulk MOSFETs: BSIM3 (1995)

BSIM4 (2000)BSIM6 (2013)PSP (2006)HiSIM2 (2011)

•LDMOS: HiSIM_HV (2007)•SOI MOSFETs: BSIMSOI (2002)

HiSIM-SOI (2012)•BJTs: MEXTRAM (2004)

HICUM (2004)•Multi-Gate MOSFETs: BSIM-CMG (2012)•MOS Varactor: MOSVAR (2006)•Resistors: R2_CMC (2005)

R3_CMC (2007)•Junction Diodes: DIODE_CMC (2009)

Other Standards:•TMI2 Modeling API (2010)

CMC Standards

Verilog-A

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API – Model Adaption

• Device considerations

Implementation in a real Foundry Process flow

Parasitic elements introduced by connections

How to add extra functionality to a device

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.Model card Instance

Model card represents physics of conduction between nodes

Ideal Contacts

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Device realization

Model card

Model Inst.RES RES Inductance Inductance

cap

cap

extraextra

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Netlist Snap-shot

• Net list

X1.Subckt added n1 n2 n3

r1 n1 m1 0.1c1 n2 0 0.1fL1 n2 m2 0.01nr2 n3 m3 0.01m1 m1 m2 m3 mymodel NMOS

.ends added

.model NMOS…………….end

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Starting Point – TMI flow

• Now modify model

A silicon device sees different conditions like voltage and currentat the nodes where the intrinsic model takes over due to parasitics.

These parasitic elements are due to implementation in a measurable structure and the process flow.

An alternative to using a subcircuit approach is to use a TMI flowWhere an extra wrapping layer is used to add extra componentsAnd modify the model parameters of the basic model instance.

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Alternative to Subcircuit

- extra over-layer

TMI Layer

Basic Model

Compound Circuit Model

This allows for far more than model card parameter changes

You can add extra components etc.

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TMI2 Standard Model Interface

Customizations around the standards can be added via TMI.

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TMI2 licensed to CMC• CMC License to members

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API Development based on TMI2

• API current development

Improved from single model to multiple concurrent models

Incorporated BSIM-CMG 106.1 to prove concept

Currently members of Working group assessing functionality

Using TMI2 code as a starting point :

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API – Ageing, Reliability

• Ageing simple case

• Enhancing TMI2 to support BSIM-CMG and component aging.

End of Life

t

Beginning of Life

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API Development

• Next Steps in developmentWe have Reliability Requirement from complimentary Working Group

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API Development

• Other considerationsWe have Reliability Requirement from complimentary Working Group

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How You Can Help

• Your comments are requested on current questions:

1. Separation of Aging and Transistor Models2. Multiple Model-Vendor Support3. Sub circuit & Verilog-A Support

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Separation of Aging & Xstr Models• Should aging models be separated from transistor

models?

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SeparatedCombined

• Combined approach currently supported

• Separated approach would allow EDA vendors to offer aging simulation that is interoperable with foundry models and other simulators

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Multiple Model-Vendor Support• Should customized models from multiple vendors be

supported?

• Current approach supports only one model-vendor

• Support for multiple model-vendors could help facilitate• 3D Chip Stacking (customized models from multiple foundries)• Aging & Transistor Model Separation (previous slide)

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Circuit Simulator

Dynamic Linker TMI Wrapper(libTMImodel.so)

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Subcircuit & Verilog-A Support• Should aging models for Subcircuits and/or Verilog-A

models be supported?

• These elements are not currently supported• Support could allow open sharing of aging models that

are interoperable with protected models

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.model mosb4 bsim4 vth0=…

.model resr3 r3 rsh=…

.subckt myldmos d g s w=1u l=1umcore xd g s s mosb4 w=w= l=lrdrain xd s d w=w resr3

.ends

.subckt memristor p n

.param a=10 b=100 c=1000amemristor p n memristor+ a=‘a’ b=‘b’ c=‘c’.ends

Reference to Verilog-A MemristorAddition of drain resistor through subckt

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THANK YOU!

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Further Details of the CMC model API Working group contact:

Colin.shaw@silvaco.com