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The Design and Analysis of Multi-megawatt Distributed Single Pole Double Throw
(SPDT) Microwave Switches
Sami G. Tantawi, and Mikhail I. Petelin
Stanford Linear Accelerator Center, Stanford University
Outline
• Motivation• Different types of SPDT microwave switches• Distributed phase shifters• Microwave control through three port network• Periodic three-port networks, and the synthesis
process• Optically controlled SPDT
Eight 75-megawatt klystrons
RF
e+ or e- A Cluster of 9 Multi-Moded DLDS Sections
RF Power Sources
A Single Multi-Moded Delay Line RF Distribution System
Accelerator Structures
Delay Lines
~12.7 cm Circular Waveguide
~7.4 cm Circular Waveguide
Multi-Moded DLDS
TE01 Mode Extractor(Power is Extracted Evenly between Four Waveguides)
TE01
TE12 (Vertically Polarized)TE12 (Horizontally Polarized)
TE01
TE12 (Vertically Polarized)
TE01
TE01 Mode Extractor
Mode Launcher (Fed by Four Rectangular Waveguides)
TE21
TE21-TE01 Mode Converter
Klystrons
~ 6 m
TE01 Mode Converter (Fed by Four Rectangular Waveguides)
TE12 to TE01 Mode Converter
~53 m
Tantawi 28/4/98
TE01 Tap-Off
• The Current Next Linear Collider design have accelerator structure sections that requires a 200 MW, 375 nS pulses at 11.424 GHz. The available power supplies are 75 MW klystrons which produces more than 1.5 S pulses. Hence, pulse compression is needed.
• DLDS is an alternative to conventional pulse compression which enhances the peak power of an rf source while matching the long pulse of that source to the shorter filling time of the accelerator structure.
3/13/23/2
3/23/13/2
3/23/23/1
j
j
jj
S
Input
Output 1
Output 2
Simple SPDT
Phase Shifter
Input
Output 2
Output 1
Output 1Input
Output 2
Phase Shifting Active element
Phase Shifting Active element
Electric field polarization at input
Electric field polarization at output when the switch is off
Electric field polarization at output when the switch is on
. Schematic Diagram of a dual mode SPDT
The basic three-port network.
The phase of the reflected signal from the third port depends on the status of the active element
Input Output
Three Port Lossless Network
that have a scattering matrix S
Active Arm
cos2
sin
2
sin2
sin
2
cos
2
cos2
sin
2
cos
2
cos
jj
jj
ee
ee
S
jeVV 33
T he resultant, sym m etric, tw o-port netw ork, then, has the fo llow ing form :
2222
2222
2cos
2sin
2sin
2cos
jj
jj
porttwo
eej
ejeS ,
w here the angle is given by
1cos
cos
j
jj
e
ee ,
2
21
22
3
2
3 2coscoscos43
sin
VVVV
0
0.2
0.4
0.6
0.8
1
3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
m=0m=1m=2m=3m=4
Rat
io b
etw
een
the
forw
ard
and
back
wor
d w
aves
of
an
eige
n so
luti
on
Number Of Switching Elements
The basic three-port network.
Input Output
Phase Shift/Period=3n
0
0.5
1
1.5
2
1 2 3 4 5 6 7 8 9 10 11 12
Number of Elements=6
Number of Elements=9
Number of Elements=12
|V1+
+V
2+|
Element Number
Total Phase shift=3
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2 4 6 8 10 12 14 16 18
Pea
k (|V
1++
V2+
|)
Number of Elements
2/1
33
3max /
GA
ZPEE in
n
3
/Z
RPP slnl
Number of Elements=6
Laser Light
Silicon Wafer
Sapphire DiscsShort Circuit
For the pulse compression system application associated with the NLC, the device should remain in one state for approximately 1.75µsec, and in the other state for 250 nsec. Since silicon has a carrier life time that can extend from 1 µsec to 1 msec it seems like a natural choice for this application. One can excite the plasma layer with a very short pulse from the external stimulus (~5nsec) and the device will stay in its new status long enough till all the rf signal is terminated. At a carrier density 1019/cm3 silicon would have a conductivity of ~3.3x103 mho/cm. This is two orders of magnitude smaller than that of copper. However, it is high enough to make an effective reflector. The skin depth of an rf signal at the NLC frequency at this conductivity level is ~8µm.
The active arm is made of a circular waveguide operating at the fundamental mode TE11
DESIGN EXAMPLE OF AN OPTICALLY CONTROLLED X- BAND SWITCH
One of the applications of this switch is the high power pulse compression system of the Next Linear Collider . This system operates at 11.424GHz. We can construct the phase shifter and, hence the switch from a series of six three-port networks. The three-port network may be composed of a WR90 rectangular waveguide with a circular waveguide coupled to it from the broad side. A propagation of 200 MW in waveguide junctions having similar dimensions has been demonstrated. If the switch is to operate at a 100 MW level, the phase shifter need to handle only 50 MW.
The third arm, in this case, is composed of a circular waveguide carrying the fundamental mode TE11. If the diameter of this waveguide is 2.54 cm, the peak field for a 50MW power level is 140 kV/cm. If the active element in these guides is a silicon wafer, which can be switched optically using a short pulse laser, the peak field need to be less than a 100 kV/cm at the wafer. Hence the normalized peak field need to be less than 0.714. If we assume to be 0; at the normalized peak field is 0.6, and the normalized losses is 0.914. Hence the peak electric field is 84 kV/cm. When the switch is on we assume a carrier density of about 1019/cm3 which corresponds to a conductivity of 3.3 x 102. Hence, the losses is 0.46% per element, i.e., a total of 230 kW is being wasted at the silicon wafer. The realizability of the cooling system to take out this power depends on the average power and the pulse length of the rf signal.
CONCLUTIONWe presented an abstract analysis and design methodology for a DTSP switch based on several distributed elements. We showed that such a switch, in principle, could be designed to handle a 100 MW at X-band.