August 21st, 2016 l JIN KIM l Samsung Electronics

The future of graphic and mobile memory for new applications

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Disclaimer

This presentation is intended to provide information concerning memory industry. We do our best to make sure that information presented is accurate and fully up-to-date. However, the presentation may be subject to technical inaccuracies, information that is not up-to-date or typographical errors. As a consequence, Samsung does not in any way guarantee the accuracy or completeness of information provided on this presentation. Samsung reserves the right to make improvements, corrections and/or changes to this presentation at any time.

The information in this presentation or accompanying oral statements may include forward-looking

statements. These forward-looking statements include all matters that are not historical facts, statements regarding the Samsung Electronics' intentions, beliefs or current expectations concerning, among other things, market prospects, growth, strategies, and the industry in which Samsung operates. By their nature, forward-looking statements involve risks and uncertainties, because they relate to events and depend on circumstances that may or may not occur in the future. Samsung cautions you that forward looking statements are not guarantees of future performance and that the actual developments of Samsung, the market, or industry in which Samsung operates may differ materially from those made or suggested by the forward-looking statements contained in this presentation or in the accompanying oral statements. In addition, even if the information contained herein or the oral statements are shown to be accurate, those developments may not be indicative developments in future periods.

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Contents

• Memory technology trend

• High speed graphic technology ( >10Gbps)

• Low power mobile technology ( >20%)

• Conclusion

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Memory technology trend

5/24

Higher Performance Autonomous

Artificial

Intelligence

Computer Vision

Virtual

Reality Memory -Centric

Computing

Lower Power

x10 Bandwidth

1

0.5

x0.5 Power Efficiency

Memory is at the core of new applications

256GB/s

30GB/s

LP4X LP3

0.7

HBM2 GDDR5 LP4

Source: Samsung

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Memory Evolution

Memory-centric system evolution • Extreme B/W, performance/power, data processing, cost effective solutions

Core Clock SoC

Multi-Core

Time

Me

mo

ry W

all

Eff

icie

ncy (

Pe

rfo

rm./

Pow

er,

Cost)

A.I., VR/MR, Vision

Data Traffic,

Cost, Thermal

off-loading

customized

processing

lower power

noise immune

high speed

Value, UX

Perform extension

PC/Server, Mobile, Gfx

DDR5/LP5/GDDR6

Low Cost HBM/PIM

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Memory technology trend

Power Efficiency

[mW/GBps]

100%

80%

60%

40%

20%

2020 2016 2018

Performance

[Gbps/pin] 15

12

6

3

LP5

LP4X LP4

2016 2018 2020

DDR4

9

DDR5

GDDR5

LP4

• GDDR6 with over 14Gbps, beyond 10Gbps GDDR5

• LP5, 20% more power-efficient than LP4X

LP5

GDDR6

DDR5

LP4X

GDDR5

DDR4

LP3

DDR3

Source: ISCA2016, Samsung

GDDR6

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High Bandwidth Memory: HBM

PCB

DRAM

Buffer Logic Processor

Si Interposer

HBM

TSV Technology

1,024 I/O Architecture

Benefits

Microbump

8H stacked 20nm 8GB HBM

HBM

GDDR5

X 0.8

Power Efficiency

High Bandwidth 1TB/s

X 2.7

Performance

HBM

GDDR5

Source: Samsung

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Processing In Memory: PIM • Fill the performance gap and deliver energy-efficient solutions

Processing In-Memory Better parallelism and lower bus traffic

CPU

DRAM

Source: Samsung

Processing In Buffer Processing In DRAM

AP GPU/VPU

Memory off-loading for lower frequency and power

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High speed graphic technology ( >10Gbps)

• Graphic application requirement

• Asymmetric System, Crosstalk, EQ tuning

• GDDR6, Low cost HBM, PIM

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High speed memory requirement • For 4K real infographic virtual reality, 13.2GB, 1TB/s memory needed

• For 4K 3D mixed reality, +3.5GB, 151GB/s memory needed

90 462

3,216

215

1064

3,640

QHD 4K UHD 8K UHD

2

8

13

6

13.2

23.6

QHD 4K UHD 8K UHD

Main H/E

1.0

2.7

9.0

1.6

3.5

11.6

QHD 4K UHD 8K UHD

Main H/E

28 101

527

42 151

791

QHD 4K UHD 8K UHD

[ Gfx Capacity, GB ]

[ B/W, GB/s ]

[ Added Capacity, GB ]

[ B/W, GB/s ]

Gaming Virtual Reality memory Mixed Reality memory

Source: Samsung Variable Assumption

Poly count, fps, # of texture per fragment, cache hit rate, tri-linear filtered,

# of virtual light source, Reflection/refraction ratio, ray bounce depth

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Asymmetric system for higher data rate • Focus on the respectively dedicated features to maximize data rate

‒ Smart GPU : Training (Per-bit Timing/EQ) for minimizing static offset/noise

‒ Noise immune DRAM : minimizing dynamic noise (Jitter, ISI/x-talk, clock duty/skew)

CMD/AMD

PLL/DLL

Data Tx/Rx

D Q

Clock Phase

controller

DQ D Q

Phase

Detector

CTLE

DQ[0:7] D Q

D Q

DRAM

Core

To EDC pin

D Q

D Q DRAM

Core

WCK_t

WCK_c

CK_t

CK_c

CA[0:9]

Calibration data

Noise immune

circuit/PKG

Jitter

ISI

X-talk

Training(Timing/EQ)

Board/PKG SI/PI

GPU DRAM

Source: Samsung

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X-talk reduction for Board/PKG design

• Small X-talk Package : reduction of X-talk with better return path

• Crosstalk Reduction with coding : 3B4B, 8B9B

Small X-talk PKG requirement 3B4B encoding

Crosstalk Reduction

GDDR5

Source: Samsung

ICR: Insertion loss to Crosstalk Ratio

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DFE for return-loss reduction on system

CTLE & DFE

CTLE and DFE

Periodically Calibrated by GPU

Quarter rate DFE with summer in sampler

Adopt merged summer/sampler for fast feedback

Source: Samsung

• Single ended signaling requires noise immune equalizer

‒ DFE* is more suitable than CTLE**

* Decision Feedback Equalization

** Continuous Time Linear Equalization

DQ

FIFO

8GHz

WCK/WCKB

/2 4

4GHz

RX EQ FIFO

MUX TX

CLK buffer

4

4

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GDDR6 ideas • High Speed Signaling, 14Gbps ~ 16Gbps, 1.35V

‒ Low jitter clocking with WCK/byte, Per-bit RX/TX equalizer training, X-talk reduction

‒ 2 channel with BL16, same Clock/ADD freq., twice of WCK/DQ freq.

Target Timing WCK Clocking

RX

WCK tree WCK

GPU DRAM

GPLL

TX

WR RD

Noise immune DRAM

Word Byte

DQ

14Gbps

~16Gbps

7GHz

~8GHz

GDDR5

GDDR6

CK : 1.75Gbps

CMD : 1.75Gbps

ADDR : 3.5Gbps

WCK : 3.5Gbps

DQ : 7Gbps

CK : 1.75Gbps

CA : 3.5Gbps

WCK : 7Gbps

DQ : 14~Gbps

Source: Samsung

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Low cost HBM for consumer segment • ~ 200GBps with smaller # of TSV compared to HBM2

‒ Cost competitiveness ; remove buffer die, reduce # of TSV, organic interposer, etc..

‒ Need inputs from Client segment for specific features

Challenges

1. IO reduction, Smaller # of TSV

2. Remove buffer die

3. Master/Slave structure

4. Remove ECC

5. Si or organic Interposer

Challenge for HBM Comparison

HBM2 Low cost HBM

I/O 1024 ~512

Pin speed 2Gbps 3Gbps ~

BW (GB/s) 256 ~ 200

Cost/GB 1 0.X

PCB

Si Interposer

HBM

5

1 2

3 4

Buffer

DRAM

Logic Processor

Source: Samsung

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PIM, Deep Learning in DRAM • Parallel processing in buffer to reduce extreme-bandwidth

‒ convolution, subsampling, matrix calculation

• Collaborate with accelerator for performance/cost

Processing in Buffer Extreme B/W Requirement

GPGPU

HBM/GDDRx

CPU

Mem

CPU

Mem

Accelerator

xHBM xHBM

CPU

+

GPU+HBM/GDDRx

CPU

+

Acc.s+xHBMs*

X10 (# of core)

Convolution / Subsampling Deep Learning

In Buffer

DRAM

DRAM

DRAM

DRAM

Ac

ce

lera

tor

Accelerator

xHBM xHBM

X10 (# of core)

* xHBM: Extreme HBM

Data movement reduction

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Low power mobile technology ( >20%)

• Motivation for low power mobile

• LP4X / LP5

• PIM

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Motivation for low power mobile

10

1

10-1

10-2

Pow

er

Dis

sip

ation [

W]

‘00 ‘20 ‘10 ‘15 ‘05

Thermal Limit (hand-held device)

Static Power

Dynamic Power Power Gap

Lower Power design

[Year]

Power Dissipation Trend

TDP [Watt]

GFLO

PS (

GPU

)

0 300 100 200

3K

4K

1K

5K

2K

Desktop

Notebook

Mobile

Oculus Rift (+GTX Card) PC Graphic

Performance

• PC-level graphic performance and mobile power budget

• Power is continuously increasing with limited thermal budget

Source: Samsung

Performance vs. TDP

*TDP(Thermal Design Power)

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Lower power solution, LP4X

LP4X Power Reduction LP4X Idea

• LP4X : 4266Mbps, VDDQ/VDD = 0.6V/1.1V

‒ IO power reduction with 0.6V VDDQ, Good example of small change but big gain

Source: Samsung

CHANNELVOH

Pre

-dri

ve

r

DQ

Rterm

MNDW

MNUP

VO0

VDDQ (=1.1V)VOH =VDDQ/3

VREF =VOH/2

1-UI

GNDVO

CHANNELVO

Pre

-dri

ve

r

DQ

Rterm

VDDQL (=0.6V)

from AP

MNDW

MNUP

VO0

VDDQ (=1.0V)

VOH =VDDQ/2

VREF =VOH/2

1-UI

GNDVO

LP4X

•Conditions : IDD4R(VDDQ+VDD2) Spec Value / 50% Data change each burst transfer / Included process node contribution

LP4 3200 LP4 3733 LP4 4266 LP4X 4266

IO

Core

18% Total Power Saving!!!! LP4

-45%

Same Swing

Same VOH

Half-level VDDQ

1.1V

0.6V

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LP5 target & ideas • LP5 : 6400Mbps, VDDQ/VDD < 0.6V/1.1V

‒ Extremely high band-width(~6.4Gbps) and smart power reduction(~20%)

LP5 ideas Power Efficiency Trend

Source: Samsung

LP2 LP3 LP4 LP4X LP5

[mW/Gbps]

* Pin Speed

- LP2 : 800Mbps ~ 1066

- LP3 : 1600Mbps ~ 1866

- LP4 : 3200Mbps ~ 3733

- LP4X : 4266Mbps

20%

35%

39%

18%

CMD Based

Data CLK(WCK)

WCK

Center-tap term

Deep

Sleep Mode

• IDD4W/R reduction

• IDD6 reduction

• IDD2N reduction

CK/CKLPDDR4 :

BL0 BL1 BL2 BL11 BL12 BL13 BL14 BL15

DQS_C/T

DQ

LPDDR5 :

BL0 BL1 BL2 BL11 BL12 BL13 BL14 BL15

WCK

DQ

CK

(Single-Ended)

Over 50%

IDD2N Reduction

Over 5%

IDD4W/4R Reduction

Over 30%

IDD6 Reduction

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PIM, Lower power processing • Memory off-loading for reduced power consumption

‒ Reduce the unnecessary data transfer and frame rate control

• Collaborate with SoC/AP for performance/power

‒ PoC with special memory for post/pre-processing

AP CIS Display

AMBA AHB

Display

CIS AP

Pre/Post Processing In Memory

Memory Off-loading Solution Memory B/W Traffic

VPU

Recognition Distortion FRC Correction Limited Power Budget

Severe

Data Traffic

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Conclusion

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Conclusion

• Memory requirements have become more strict in time with respect to

performance, power, and cost

• Keeps innovating technology to correspond to those requirements

‒ Make efforts to extend the value of traditional memory

‒ Figure out innovative memory solution

• Close collaboration with partners is essential for delivering the right

memory solution.

kjh5555@samsung.com