TIP32A

31Motorola Bipolar Power Transistor Device Data

. . . designed for use in general purpose amplifier and switching applications. CollectorEmitter Saturation Voltage

VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc CollectorEmitter Sustaining Voltage

VCEO(sus) = 60 Vdc (Min) TIP31A, TIP32AVCEO(sus) = 80 Vdc (Min) TIP31B, TIP32BVCEO(sus) = 100 Vdc (Min) TIP31C, TIP32C

High Current Gain Bandwidth ProductfT = 3.0 MHz (Min) @ IC = 500 mAdc

Compact TO220 AB Package

*MAXIMUM RATINGS

Rating

Symbol

TIP31ATIP32A

TIP318TIP32B

TIP31CTIP32C

Unit

CollectorEmitter Voltage

VCEO

60

80

100

Vdc

CollectorBase Voltage

VCB

60

80

100

Vdc

EmitterBase Voltage

VEB

5.0

Vdc

Collector Current ContinuousPeak

IC

3.05.0

Adc

Base Current

IB

1.0

Adc

Total Power Dissipation@ TC = 25CDerate above 25C

PD

400.32

WattsW/C

Total Power Dissipation@ TA = 25CDerate above 25C

PD

2.00.016

WattsW/C

Unclamped InductiveLoad Energy (1)

E

32

mJ

Operating and Storage JunctionTemperature Range

TJ, Tstg

65 to +150

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RJA

62.5

C/W

Thermal Resistance, Junction to Case

RJC

3.125

C/W(1) IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 ..

Preferred devices are Motorola recommended choices for future use and best overall value.

SEMICONDUCTOR TECHNICAL DATAOrder this document

by TIP31A/D

Motorola, Inc. 1995

3 AMPEREPOWER TRANSISTORS

COMPLEMENTARYSILICON

6080100 VOLTS40 WATTS

*Motorola Preferred Device

CASE 221A06TO220AB

REV 1

32 Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (1)(IC = 30 mAdc, IB = 0) TIP31A, TIP32A

TIP31B, TIP32BTIP31C, TIP32C

VCEO(sus)

6080100

Vdc

Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31A, TIP32ACollector Cutoff Current (VCE = 60 Vdc, IB = 0) TIP31B, TIP31C

TIP32B, TIP32C

ICEO

0.30.30.3

mAdc

Collector Cutoff Current(VCE = 60 Vdc, VEB = 0) TIP31A, TIP32A(VCE = 80 Vdc, VEB = 0) TIP31B, TIP32B(VCE = 100 Vdc, VEB = 0) TIP31C, TIP32C

ICES

200200200

Adc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

1.0

mAdc

ON CHARACTERISTICS (1)

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)

hFE

2510

50

CollectorEmitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)

VCE(sat)

1.2

Vdc

BaseEmitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)

VBE(on)

1.8

Vdc

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

fT

3.0

MHz

SmallSignal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

20

(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

Figure 1. Power DeratingT, TEMPERATURE (C)

0 1000

1.0

160

2.0

3.0

60 8040 140

4.0

TURNON PULSEAPPROX

+11 V

Vin 0VEB(off) t1

APPROX+11 V

Vin

t2TURNOFF PULSE

t3

t1 7.0 ns100 < t2 < 500 s

t3 < 15 ns

DUTY CYCLE 2.0%APPROX 9.0 V

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.

SCOPE

RC

RB

VCC

Vin

Cjd


t, TIME (ms)

1.0

0.010.01

0.1

r(t), TR

ANSI

ENT T

HERM

AL RE

SIST

ANCE

(NOR

MALIZ

ED)

1.0 1.0 100

ZJC(t) = r(t) RJCRJC(t) = 3.125C/W MAXD CURVES APPLY FOR POWERPULSE TRAIN SHOWNREAD TIME AT t1TJ(pk) TC = P(pk) ZJC(t)

P(pk)

t1t2

SINGLE PULSE1.0 k

D = 0.5

0.05

DUTY CYCLE, D = t1/t2

Figure 4. Thermal Response

0.1

0.05

0.030.02

0.07

0.5

0.30.2

0.7

0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50

0.2

0.02

0.01

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)10 205.0 50 100

Figure 5. Active Region Safe Operating Area

0.2

0.1

0.5

SECONDARY BREAKDOWNLIMITED @ TJ 150CTHERMAL LIMIT @ TC = 25C(SINGLE PULSE)BONDING WIRE LIMIT

1.0 ms

100 s

2.0

1.0

10

5.0

I C,

COLL

ECTO

R CU

RREN

T (AM

P)

5.0 ms

CURVES APPLYBELOW RATED VCEO

TIP31A, TIP32ATIP31B, TIP32BTIP31C, TIP32C

There are two limitations on the power handling ability of atransistor: average junction temperature and second break-down. Safe operating area curves indicate IC VCE limits ofthe transistor that must be observed for reliable operation;i.e., the transistor must not be subjected to greater dissipa-tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150C; TC isvariable depending on conditions. Second breakdown pulselimits are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Fig-ure 4. At high case temperatures, thermal limitations will re-duce the power that can be handled to values less than thelimitations imposed by second breakdown.

0.05 0.1 0.2 0.70.03 0.3 0.50.07IC, COLLECTOR CURRENT (AMP)Figure 6. TurnOff Time

3.0

t, TIM

E (

s)

2.0

1.00.70.5

0.30.2

0.10.070.05

0.031.0 2.0 3.0 0.2 0.5 1.0 5.00.1 2.0 3.00.3

VR, REVERSE VOLTAGE (VOLTS)Figure 7. Capacitance

300

CAPA

CITA

NCE

(pF)

200

100

70

50

3010 20 4030

tf @ VCC = 30 V

tf @ VCC = 10 V

tsIB1 = IB2IC/IB = 10ts = ts 1/8 tfTJ = 25C

TJ = + 25C

Ceb

Ccb


V CE,

COL

LECT

ORE

MITT

ER V

OLTA

GE (V

OLTS

)

TJ, JUNCTION TEMPERATURE (C)

103

0.4

101

100

102

102

101

103

107

105

104

102

106

103

IB, BASE CURRENT (mA)IC, COLLECTOR CURRENT (AMP)

h FE,

DC

CURR

ENT G

AIN

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (AMP)

300

500

0.05 0.07 0.3 3.00.03

1007050

30

107.0

0.1

VBE, BASEEMITTER VOLTAGE (VOLTS)

Figure 10. On Voltages

VCE = 2.0 V

5.00.7 1.00.5

1.6

2.0

2.0 5.0 20 10001.0

0.8

0.4

100

100 200 50050

25C

TJ = 150C

55C1.2

1.4

0.003IC, COLLECTOR CURRENT (AMPS)

1.0

0.8

0.4

1.2

0.6

0.2

00.005 0.01 0.02 0.03 0.05 0.1

+ 2.5

IC = 0.3 A

20 60 80 100 120 16014040

V, VO

LTAG

E (VO

LTS)

TJ = 25C

1.0 A 3.0 A

0.2 0.3 0.5 1.0 2.0 3.0

TJ = 25C

VBE(sat) @ IC/IB = 10

VBE @ VCE = 2.0 V

VCE(sat) @ IC/IB = 10

V, TE

MPER

ATUR

E CO

EFFIC

IENT

S (m

V/C)

+ 2.0+ 1.5

+ 1.0+ 0.5

0

0.5

1.0 1.5

2.0 2.5

0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0

*APPLIES FOR IC/IB hFE/2TJ = 65C TO + 150C

*VC FOR VCE(sat)

VB FOR VBE

Figure 11. Temperature Coefficients

, CO

LLEC

TOR

CURR

ENT (

A)I C

0.3 0.2 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6

Figure 12. Collector CutOff Region Figure 13. Effects of BaseEmitter Resistance

VCE = 30 V

TJ = 150C

100C

25C

REVERSE FORWARD

ICES

R BE,

EXT

ERNA

L BAS

EEM

ITTER

RES

ISTA

NCE

(OHMS

)

VCE = 30 VIC = 10 x ICES

IC ICES

IC = 2 x ICES

(TYPICAL ICES VALUESOBTAINED FROM FIGURE 12)


PACKAGE DIMENSIONS

CASE 221A06TO220ABISSUE Y

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES AREALLOWED.

STYLE 1:PIN 1. BASE

2. COLLECTOR3. EMITTER4. COLLECTOR

DIM MIN MAX MIN MAXMILLIMETERSINCHES

A 0.570 0.620 14.48 15.75B 0.380 0.405 9.66 10.28C 0.160 0.190 4.07 4.82D 0.025 0.035 0.64 0.88F 0.142 0.147 3.61 3.73G 0.095 0.105 2.42 2.66H 0.110 0.155 2.80 3.93J 0.018 0.025 0.46 0.64K 0.500 0.562 12.70 14.27L 0.045 0.060 1.15 1.52N 0.190 0.210 4.83 5.33Q 0.100 0.120 2.54 3.04R 0.080 0.110 2.04 2.79S 0.045 0.055 1.15 1.39T 0.235 0.255 5.97 6.47U 0.000 0.050 0.00 1.27V 0.045 1.15 Z 0.080 2.04

B

Q

H

Z

LV

G

N

A

K

F

1 2 3

4

D

SEATINGPLANET

CST

U

RJ


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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in differentapplications. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola doesnot convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure ofthe Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any suchunintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmlessagainst all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

TIP31A/D

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