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TUNABLE FEM INTEGRATION
AND ARCHITECTURE INNOVATION
IN RF SOI CMOS
BAREND VAN LIEMPD
PhD Researcher
imec & VUB
RF SOI WORKSHOP –TOKYO, JAPAN, JANUARY 2016
CONFIDENTIAL
CONTENTS
R&D for a Future-Proof RF Front-end
Current FEM
Integration: RF SOI CMOS
Tuning and Sensing
Cancellation versus Filtering
imec Results
Tunable duplexer
Roadmap & Conclusion
2
CONFIDENTIAL
CONTENTS
R&D for a Future-Proof RF Front-end
Current FEM
Integration: RF SOI CMOS
Tuning and Sensing
Cancellation versus Filtering
imec Results
Roadmap & Conclusion
3
CONFIDENTIAL
‘FIXED’ FILTER-BASED FEM EVOLUTION
4
15 bands
PA-DPX modules
Less interfacing
LB/MB/HB split
Multiplexers
CA support,
Envelope tracking
MIPI control
2016: ~120mm2
9 bands
Scalable PA
Multi-band, multi-mode
Duplexer-switch
2012: ~200mm2
4 bands
Discretes
Technology separation
PA/filter/SPxT
2010: ~300mm2
CONFIDENTIAL
‘FIXED’ FILTER-BASED FEM EVOLUTION
5
>25 bands?
Shrinking limit?
Multi-standard?
MIMO?
Which technology?
>2020: ?
15 bands
PA-DPX modules
Less interfacing
LB/MB/HB split
Multiplexers
CA support,
Envelope tracking
MIPI control
2016: ~120mm2
9 bands
Scalable PA
Multi-band, multi-mode
Duplexer-switch
2012: ~200mm2
4 bands
Discretes
Technology separation
PA/filter/SPxT
2010: ~300mm2
CONFIDENTIAL
‘FIXED’ FILTER-BASED FEM EVOLUTION
6
>25 bands?
Shrinking limit?
Multi-standard?
MIMO?
Which technology?
>2020: ?
15 bands
PA-DPX modules
Less interfacing
LB/MB/HB split
Multiplexers
CA support,
Envelope tracking
MIPI control
2016: ~120mm2
9 bands
Scalable PA
Multi-band, multi-mode
Duplexer-switch
2012: ~200mm2
4 bands
Discretes
Technology separation
PA/filter/SPxT
2010: ~300mm2
Imec vision
High integration!
Towards single-chip FEM
CONFIDENTIAL
CONTENTS
R&D for a Future-Proof RF Front-end
Current FEM
Integration: RF SOI CMOS
Tuning and Sensing
Cancellation versus Filtering
imec Results
Roadmap & Conclusion
7
CONFIDENTIAL
WHY RF SOI CMOS FOR TUNING?
8
Buried oxide isolates devices
+ High substrate resistance
+ Good passive Q with good RF back-end
Smaller junction parasitics compared to bulk CMOS
+ Improved linearity
+ Better RON*COFF
n+ n+
BOX (Buried Oxide)
p
sub
CONFIDENTIAL
WHY RF SOI CMOS FOR TUNING?
“Floating” body on CMOS device enables switch stacking
High linearity, high power handling
9
CU CU V2
VB
VSD
V1
VGRG
RB
RSD
CC
CONFIDENTIAL
CONTENTS
R&D for a Future-Proof RF Front-end
Current FEM
Integration: RF SOI CMOS
Tuning and Sensing
Cancellation versus Filtering
imec Results
Roadmap & Conclusion
10
CONFIDENTIAL
BENEFITS OF TUNABLE FEM
11
Cost
1. Reduced switch-count
2. Reduced number of non-CMOS components
3. Reduced overall footprint
s
e
)
)
O
RF SOI
integrated
FEM
CONFIDENTIAL
BENEFITS OF TUNABLE FEM
12
Cost
1. Reduced switch-count
2. Reduced number of non-CMOS components
3. Reduced overall footprint
Functionality
1. Increased number of bands
2. Improved battery life
1. Improved radiated power (antenna aperture tuning, tunable match)
2. Improved sensitivity (tunable –interstage– matching)
3. Improved cell-edge reception, indoor penetration
RF SOI
integrated
FEM
CONFIDENTIAL
MISSING BUILDING BLOCKS IN RF SOI CMOS
13
Multi-throw RF switch
Antenna tuners
Tunable capacitors
Tunable LNA
× Tunable filters
× Tunable duplexersHi-FEM
CONFIDENTIAL
TUNING AND SENSING
Sensing closes the loop in tunable architectures
14
RX
loop-through
RF SOI FEM Bulk CMOSDigital baseband
TuningAlgorithm
Rx(Sensor)
Tx
Antenna tuner
EB Duplexer
TunableMatch
CONFIDENTIAL
TUNING AND SENSING
Sensing closes the loop in tunable architectures
15
RX
loop-through
+
On-chip
Sensing
RF SOI FEM Bulk CMOSDigital baseband
TuningAlgorithm
Rx(Sensor)
Tx
Antenna tuner
EB Duplexer
TunableMatch
On-chip sensing engine
ADC
CONFIDENTIAL
TUNING AND SENSING
Sensing closes the loop in tunable architectures
16
Single-chip
Sensing
+
Algorithm
(no RX loop)
RF SOI FEM
Antenna tuner
EB Duplexer
TunableMatch
On-chip sensing engine
+ Algorithm
CONFIDENTIAL
TUNING AND SENSING
Some Sensing already in current FEM
Envelope tracking for PA
Antenna tuning (most still open-loop)
Future architectures will depend heavily on adaptive loops
FEM + RFIC + baseband processor interactions
17
CONFIDENTIAL
CONTENTS
R&D for a Future-Proof RF Front-end
Current FEM
Integration: RF SOI CMOS
Tuning and Sensing
Cancellation versus filtering
imec Results
Roadmap & Conclusion
18
CONFIDENTIAL
IN-BAND FULL-DUPLEX (IBFD)
Recent paradigm: same-frequency, same-time
Potentially:
doubles capacity,
improves network fairness,
increases maximum network density,
...
Not yet standardized
Tx
Frequency
Tim
e
Rx
Tx
Rx
Tx
Rx
Single
channel
Guard
interval
Two channels
channel
spacing
Tx
ch
an
ne
l
Rx c
han
ne
l
Frequency Frequency
Rx &
Tx
ch
an
ne
l
Tim
e
Tim
e
Single
channelTDD FDD IBFD
19
CONFIDENTIAL
Frequency-Division Duplex
Isolation @ fTX and fRX
>50 dB TX signal
>50 dB TX noise
Can use filtering
fTXFrequency
P
S
D
50dB
fRX
RX noise floor
RX iP1dB
50dB
TX
SITX
Noise
@ RX
FDD
SELF-INTERFERENCE CHALLENGES
20
CONFIDENTIAL
SELF-INTERFERENCE CHALLENGES
Frequency-Division Duplex
Isolation @ fTX and fRX
>50 dB TX signal
>50 dB TX noise
Can use filtering
In-Band Full-Duplex
Isolation at 1 frequency
>100 dB TX signal
>80 dB TX noise
Can not use filtering
(needs cancellation)
fTXFrequency
P
S
D
50dB
fRX
RX noise floor
RX iP1dB
50dB
TX
SITX
Noise
@ RX
FDD
f IBFrequency
P
S
D
>80 dB
RX noise floor
RX iP1dB
@RF: 50dB
TX
SI
TX
Noise & distortion
FD
50dB
(Numbers are only illustrative)
21
IB
CONFIDENTIAL
Frequency-Division Duplex
Isolation @ fTX and fRX
>50 dB TX signal
>50 dB TX noise
Can use filtering
In-Band Full-Duplex
Isolation at 1 frequency
>100 dB TX signal
>80 dB TX noise
Can not use filtering
(needs cancellation)
22
fTXFrequency
P
S
D
50dB
fRX
RX noise floor
RX iP1dB
50dB
TX
SITX
Noise
@ RX
FDD
f IBFrequency
P
S
D
>80 dB
RX noise floor
RX iP1dB
@RF: 50dB
TX
SI
TX
Noise & distortion
FD
50dB
(Numbers are only illustrative)
Assumed impossible!
SELF-INTERFERENCE CHALLENGES
IB
CONFIDENTIAL
Frequency-Division Duplex
Isolation @ fTX and fRX
>50 dB TX signal
>50 dB TX noise
Can use filtering
In-Band Full-Duplex
Isolation at 1 frequency
>100 dB TX signal
>80 dB TX noise
Can not use filtering
(needs cancellation)
23
fTXFrequency
P
S
D
50dB
fRX
RX noise floor
RX iP1dB
50dB
TX
SITX
Noise
@ RX
FDD
f IBFrequency
P
S
D
>80 dB
RX noise floor
RX iP1dB
@RF: 50dB
TX
SI
TX
Noise & distortion
FD
50dB
(Numbers are only illustrative)
Cannot work with traditional FEM!
SELF-INTERFERENCE CHALLENGES
IB
CONFIDENTIAL
IN-BAND FULL-DUPLEXEXAMPLE FEM+TRX
Distributed Cancellation: RF, BB, Digital
1st-stage RF cancellation is critical Low distortion, high cancellation Relaxes RX specifications
RF SIC
(this work)
LNA
Φ
PA
Rx
ABB
Δt
LO Baseband processor
50dBRF SIC
Channel
estimation
Multi-path
reflection
cancellation
>100dBTotal SIC
Tx
ABB
-+
.
.
.
.
Δt
Digital SIC
MOD
DEMOD
-+
Analog
SIC
2nd
stage
SIC
24
CONFIDENTIAL
CONTENTS
R&D for a Future-Proof RF Front-end
imec Results
Tunable duplexer
Roadmap & Conclusion
25
CONFIDENTIAL
IMEC’S Hi-FEM & SCALDIOHi-FEM = HIGHLY-INTEGRATED FRONT-END MODULE
SCALDIO = SCALABLE RADIO
Solve problems where they are best solved
High-speed/low-power in bulk CMOS SCALDIO
High-power/high-linearity in RF SOI CMOS Hi-FEM
(schematic interpretation only)
WidebandLNA
DuplexerAntenna
Tuner
RF
Filter
MatchingFilter
Low Distortion
PA
HRN-path mixer
Direct-DigitalRF Modulator
Wideband antenna
ADC
ADC
D
I
G
I
T
A
L
B
B
Tx Rx
LO
Integrated balun
Baseband
Hi-FEM – <180nm RF SOI CMOS SCALDIO – <28nm bulk CMOS
26
CONFIDENTIAL
Reconfigurable RX in bulk 28nm
Fully reconfigurable: RF, BW, gain, ...
0.4-6GHz (dual-band), <40mW, 0.6mm2
Digital-intensive TX in bulk 28nm
Scaling/portable-friendly
1.2-2.6GHz, 34% [email protected]
Electrical-Balance DPX in RF SOI
1.9-2.2GHz tunable TX-RX isolation
30dBm TX power & 3GPP jammers
IMEC’S SCALDIO & Hi-FEM
27
SCALDIO
Rx
SCALDIO
Tx
Hi-FEM1Duplexer
CONFIDENTIAL
CONTENTS
R&D for a Future-Proof RF Front-end
imec Results
Tunable duplexer
Roadmap & Conclusion
28
CONFIDENTIAL
ZANT
PA
LNA
ZBAL
Path 1
Path 2
Leakage cancelled!
Must be tuned to
maintain balance
Cancels the TX self-interference
Must track ZANT environmental changes
Hi-FEM: ELECTRICAL-BALANCE DUPLEXER
Concept
29
CONFIDENTIAL
1.9-2.2GHz tunable isolation
Standard-proof linearity: +70dBm IIP3
ZBAL: 4x 8b-tuned C, 2x fixed L, 1x fixed R
Csec
ZANT
ZBAL
PA TM
TXIN
ANTI/O RXOUT
LNA
50Ω C4
C1
C2
C3
L1
L2
ISSCC 2015: Hi-FEM1 EB-DUPLEXER
30
CONFIDENTIAL
ROADMAP
Hi-FEM1
- Mid-band, single-freq. EBD
- 4 LTE bands
- IBFD-ready
Hi-FEM2A
Hi-FEM2B
(Targets)
- Low-band, dual-freq.
- Duplexer
- LNA linearity
- FDD + IBFD
Future R&D Topics
-Tunable RF Filtering?
- On-chip sensing?
- Multi-duplexer?
- PA-duplexer integration?
- Multi-technology modules?
- Loss & linearity optimization?
- << Your R&D Topic Here >>
32
FUTURE DIRECTIONS
2015
2016
WE ARE HERE
2016
>2016
CONFIDENTIAL
CONCLUSIONS
Tuning, Sensing & Integration in the FEM is critical: performance and cost
Cancellation for future-proof FEM: TDD, FDD & in-band full-duplex
RF SOI CMOS suitable for integrated tunable FEM
33
THANKS FOR YOUR ATTENTION!
Please contact us for more information
&
enquire about a possible collaboration
Barend van Liempd
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