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UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

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Page 1: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

UNIT-IV

Frequency Analysis of BJT and MOSFET Amplifiers

Page 2: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Outline

• Low Frequency and Miller Effect

• High Frequency Analysis of CE Amplifier

• High Frequency Analysis of MOSFET Amplifier

• Cut off frequency –Unity gain

• Single stage and Multi stage Amplifiers

Page 3: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Introduction

• Frequency Response of an electric or electronics circuit allows us to see exactly how the output gain and the phase changes at a particular single frequency, or over a whole range of different frequencies depending upon the design characteristics of the circuit.

Page 4: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Introduction -contd…

• Frequency response analysis of a circuit or system is shown by plotting its gain  against a frequency scale.

• The circuits gain, (or loss) at each frequency point helps us to understand how well (or badly) the circuit can distinguish between signals of different frequencies.

Page 5: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Introduction-contd…

• There are many different ways for the calculations of the frequency depending on the combination of components.

• The -3dB frequency for resistance and capacitance (the most common in amplifier design) is determined by

fo = 1 / (2 Π R C)    • where fo is the -3dB frequency

Page 6: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Effect of Coupling Capacitors

• Coupling capacitors are in series with the signal and are part of a high-pass filter network. They affect the low-frequency response of the amplifier.

Page 7: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Effect of Coupling Capacitors

RC

+VCC

R2Vin

R1

RE

RL

C

C

1

3

C2

RinVin

C1

The equivalent circuit for C1 is a high-pass filter:

Page 8: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Effect of Bypass Capacitors-contd…

• A bypass capacitor causes reduced gain at low-frequencies and has a high-pass filter response. The resistors “seen” by the bypass capacitor include RE,

re’, and the bias resistors.

RC

+VCC

R2Vin

R1

RE

RL

C1

C3

2C

REVin

C2

|| r + e' R R R( || || )1 2 S

b

Page 9: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Effect of Internal capacitances

• The high-frequency response of an amplifier is determined by internal junction capacitances. These capacitances form low-pass filters with the external resistors.

Cbc

Cbe

Cgd

Cgs

Page 10: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Decibel

• The decibel is a logarithmic ratio of two power levels and is used in electronics work in gain or attenuation measurements.

• Decibels can be expressed as a voltage ratio when the voltages are measured in the same impedance.

• To express voltage gain in decibels, the formula is

• Av(dB) = 20 log Av

Page 11: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Typical Frequency response

Page 12: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Typical Frequency response

Gain is more commonly stated using a logarithmic scale, and the result is expressed in decibels (dB). For voltage gain, this takes the form

The upper and lower frequencies defining the bandwidth, called the corneror cutoff frequencies.

Page 13: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Bandwidth

The range of frequencies with close to constant gain is known as the bandwidth.

Page 14: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Bandwidth-contd…

• The bandwidth represents the amount or "width" of frequencies, or the "band of frequencies," that the amplifier is most effective in amplifying.

• The bandwidth is not the same as the band of frequencies that is amplified. The bandwidth (BW) of an amplifier is the difference between the frequency limits of the amplifier.

Page 15: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Bandwidth-contd…

• BW= fc2 - fc1

• For example, the band of frequencies for an amplifier may be from 10kilohertz (10 kHz) to 30 kilohertz (30 kHz).

Page 16: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Bandwidth-contd…

• In this case, the bandwidth would be 20 kilohertz (20 kHz).

• As another example, if an amplifier is designed to amplify frequencies between 15 hertz (15 Hz) and 20kilohertz (20 kHz), the bandwidth will be equal to 20 kilohertz minus 15 hertz.

Page 17: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

17

High Frequency Roll-off of Amplifier

• As frequency of operation increases, the gain of amplifier decreases.

Page 18: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Example: Video Signal

• Video signals without sufficient bandwidth become fuzzy as they fail to abruptly change the contrast of pictures from complete white into complete black.

18

High Bandwidth Low Bandwidth

Page 19: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Gain Roll-off: Simple Low-pass Filter

• In this simple example, as frequency increases the impedance of C1 decreases and the voltage divider consists of C1 and R1 attenuates Vin to a greater extent at the output.

19

Page 20: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Millers Theorem

• Miller’s theorem states that, for inverting amplifiers, the capacitance between the input and output is equivalent to separate input and output capacitances to ground.

Av

C

OutIn

Av

C(Av + 1) CAv + 1

Av( )

Page 21: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Millers Theorem-contd…

• Av is the absolute value of the gain. For the input capacitance, the gain has a large effect on the equivalent capacitance, which is an important consideration when using inverting amplifiers.

Page 22: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Miller’s Theorem-contd…

• If Av is the gain from node 1 to 2, then a floating impedance ZF

can be converted to two grounded impedances Z1 and Z2.

v

F

A

ZZ

11v

F

A

ZZ

/112

Page 23: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

23

Miller Multiplication

• With Miller’s theorem, we can separate the floating capacitor. However, the input capacitor is larger than the original floating capacitor. We call this Miller multiplication.

Page 24: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Low frequency Response Of CE Amplifier

• In capacitively coupled amplifiers, the coupling and bypass capacitors affect the low frequency cutoff. These capacitors form a high-pass filter with circuit resistances. A typical BJT amplifier has three high-pass filters.

• For example, the input coupling capacitor forms a high-pass filter with the input resistance of the amplifier:

Page 25: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Low frequency Response Of CE Amplifier- Input coupling capacitor

RC

+VCC

R2

Vin

R1

RL

Vout

C1

C3

RE C2

Rin = R1 || R2 || Rin(base)

Vin

C1Transistor base

Vbase

Page 26: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Low frequency Response Of CE Amplifier- Output coupling capacitor

• The output RC circuit is composed of the series combination of the collector and load resistors with the output capacitor. The cutoff frequency due to the output circuit is

C L 3

1

2cf R R C

Page 27: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

High-Frequency Bipolar Model

• At high frequency, capacitive effects come into play. Cb represents the base charge, whereas C and Cje are the junction capacitances.

b jeC C C

Page 28: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

High-Frequency Model of Integrated Bipolar Transistor

• Since an integrated bipolar circuit is fabricated on top of a substrate, another junction capacitance exists between the collector and substrate, namely CCS.

Page 29: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Example: Capacitance Identification

Page 30: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

HYBRID Model of CE Amplifier

Page 31: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

High-Frequency Model of Integratedcircuits

• Cce is small and can be neglected

• rbc is large and considered open

• Rbb small neglected

• Rin=Rb||rπ

Page 32: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

High-Frequency Model of Integratedcircuits-contd…

fH=ωH/2π

Rcin=Rs||Rin

Page 33: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Transit Frequency

• Transit frequency, fT, is defined as the frequency where the current gain from input to output drops to 1.

C

gf m

T 2

GS

mT C

gf 2

Page 34: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

MOS Intrinsic Capacitances

• For a MOS, there exist oxide capacitance from gate to channel, junction capacitances from source/drain to substrate, and overlap capacitance from gate to source/drain.

Page 35: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Gate Oxide Capacitance Partition and Full Model

• The gate oxide capacitance is often partitioned between source and drain. In saturation, C2 ~ Cgate, and C1 ~ 0. They are in parallel with the overlap capacitance to form CGS and CGD.

Page 36: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Effect of coupling capacitor

• With FETs, the input coupling capacitor is almost always smaller because of the high input resistance. The output capacitor may be smaller or larger depending on the drain and load resistor size.

Page 37: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Example: Capacitance Identification

Page 38: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Capacitive Coupling vs. Direct Coupling

• Capacitive coupling, also known as AC coupling, passes AC signals from Y to X while blocking DC contents.

• This technique allows independent bias conditions between stages. Direct coupling does not.

Capacitive Coupling Direct Coupling

Page 39: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Gain Roll-off: Common Source

• The capacitive load, CL, for gain roll-off since at high frequency, it will “steal” away some signal current and shunt it to ground.

1||out m in D

L

V g V RC s

Page 40: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Frequency Response of the CS Stage

• At low frequency, the capacitor is effectively open and the gain is flat. As frequency increases, the capacitor tends to a short and the gain starts to decrease. A special frequency is ω=1/(RDCL), where the gain drops by 3dB.

1222

LD

Dm

in

out

CR

Rg

V

V

Page 41: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Typical Frequency Response

Lower Corner Upper Corner

Page 42: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Low-Frequency Response of the Common-Source Amplifier

Page 43: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Low-Frequency Response of the Common-Source Amplifier

Page 44: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Low-Frequency Response of the Common-Source Amplifier

Using the voltage divider rule cwe can find Vg

Vg

s( ) Vi

s( )Rin

Rin R1

s CC1

Vg

s( )

Vi

s( )

Rin

Rin Rs

1

CC1 Rin R( )

P11

CC1

Rin R( )

Z1

CS RS P2

gm1

RS

CS

1

CS

Rs1

gm

RS1

gm

Page 45: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Low-Frequency Response of the Common-Source Amplifier

ro RD approximation is valid

after Thevenin's theorem and some manipulation

Vo s( ) Id s( ) Parallel RD ro RL s

s1

CC2RL

RD ro

RD ro

P31

CC2 RL

RD ro

RD ro

CC2introduces a zero at zero freq.and a real pole a

WP3

Page 46: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

AL s( )Vo s( )

Vi s( )AM

s

s P1

s Z

s P2

s

s P3

AM

Rin

Rin Rgm Parallel RD ro RL

Low-Frequency Response of the Common-Source Amplifier

Page 47: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

High Frequency Circuit Analysis Procedure

• Determine which capacitor impact the low-frequency region of the response and calculate the low-frequency pole (neglect transistor capacitance).

• Calculate the midband gain by replacing the capacitors with short circuits (neglect transistor capacitance).

• Include transistor capacitances.• Merge capacitors connected to AC grounds and omit

those that play no role in the circuit.• Determine the high-frequency poles and zeros.• Plot the frequency response using Bode’s rules or exact

analysis.

Page 48: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

High frequency Analysis

Page 49: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

High frequency Analysis

Page 50: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

High frequency Analysis

Page 51: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Frequency Response of CS Stagewith Bypassed Degeneration

1

1

SmbS

bSDm

X

out

RgsCR

sCRRgs

V

V

To increase the midband gain, a capacitor Cb is placed in parallel with Rs.

The pole frequency must be well below the lowest signal frequency to avoid the effect of degeneration.

Page 52: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Unified Model for CE and CS Stages

Page 53: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Unified Model Using Miller’s Theorem

Page 54: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Example: Half Width CS Stage

XW 2

22

12

1

221

2

1

,

,

XY

Lm

outL

outp

XYLminS

inp

CRg

CR

CRgCR

Page 55: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Direct Analysis of CE and CS Stages

• Direct analysis yields different pole locations and an extra zero.

outinXYoutXYinLThev

outXYLinThevThevXYLmp

outXYLinThevThevXYLmp

XY

mz

CCCCCCRR

CCRCRRCRg

CCRCRRCRg

C

g

1||

1

1||

||

2

1

Page 56: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Example: CE and CS Direct Analysis

outinXYoutXYinOOS

outXYOOinSSXYOOmp

outXYOOinSSXYOOmp

CCCCCCrrR

CCrrCRRCrrg

CCrrCRRCrrg

21

212112

212111

||

)(||||1

)(||||1

1

Page 57: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Input Impedance of CE and CS Stages

rsCRgC

ZCm

in ||1

1

sCRgCZ

GDDmGSin

1

1

Page 58: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Frequency response CS amplifier

Page 59: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Hybrid model –CE Amplifier

Cb'crbb' Co l l e c t

o r

Baserb'e rcegmVb'eCb'e

Em i t t e r

b'rb' c

Page 60: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Hybrid π model

(cont.)Cb'c

rbb' Co l l e c t o r

Baserb'e rcegmVb'eCb'e

Em i t t e r

The resistance rbb' is the base spreading resistance.The resistance rb'c and the capacitance Cb'c represent the dynamic(differential) resistance and the capacitance of the reverse-biasedcollector-base junction.

b'rb' c

Page 61: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Hybrid π model

r bb'

i cCb'cr b'e V Cb'e b'egm V b'e

Page 62: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Hybrid π model

Page 63: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Beta cutoff frequency

Page 64: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Beta cutoff frequency

Page 65: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Alpha cutoff frequency-T equivalent of Common base Amplifier

Page 66: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Alpha cutoff frequency-T equivalent of Common base Amplifier

Page 67: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Frequency Response

fc1

f

Av(mid)

Av (dB)

fc20

fc3 fc4 fc5

fcl fcu

Overall frequency response is the combination of three lower critical frequencies due to coupling and bypass capacitors and two upper critical frequencies due to internal capacitances.

Page 68: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Gain–bandwidth product

• The gain–bandwidth product (designated as GBWP, GBW, GBP or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.

• Gain-bandwidth product defined as

• GB = |AM|BW

Page 69: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Gain–bandwidth product-CE Amplifier

The common emitter amplifier, the gain-bandwidth product for the common emitter BJT amplifier configuration is substantially less.

Page 70: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Multistage Amplifiers

Multi-stage amplifiers are amplifier circuits cascaded to increased gain. We can express gain in decibels(dB).

Two or more amplifiers can be connected to increase the gain of an ac signal. The overall gain can be calculated by simply multiplying each gain together.

A’v = Av1Av2Av3 ……

Page 71: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Multistage Amplifiers

• Matching of inputs and outputs is necessary to ensure that the maximum amount of signal can be transferred between the amplifier, and any other circuit or device preceding or following it.

• This is usually the case when the gain of a single amplifier is insufficient for a given purpose.

Page 72: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Multistage Amplifiers -contd…

• Then several stages of amplification are used which involves feeding the output of one amplifier into the input of another

Page 73: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Multistage Amplifiers-contd…

• This will occur if the output impedance of the first amplifier is a much lower value than the input impedance of the second amplifier. 

• When connecting voltage amplifiers in cascade, the input signal to the second stage should ideally be 100% of the output voltage of stage 1, i.e. have as high a voltage amplitude as possible.

Page 74: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Multistage Amplifiers-contd…

• This allows most of the voltage available at the output terminal (point A) to be developed across the input impedance of the second amplifier rather than across the first amplifier´s output impedance.

Page 75: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Multistage Amplifiers-contd…

• The second amplifier is a current amplifier however, it will be necessary that as much current as possible flows into its input terminals.

• The input impedance of the second amplifier must be low.

• In the case of power amplifiers, the maximum power is transferred from output to input if both impedances are equal.

Page 76: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Start: Two-Stage Voltage Amplifier

• Use two-port models to explore whether the combination “works”

CE1CE2

Results of new 2-port: Rin = Rin1, Rout = Rout2

1 2 1 2 2||v m in out m outA G R R G R

1 2 2 1 2||v m m in out outA G G R R R

CE1,2

Page 77: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

MULTISTAGE Amplifier

Page 78: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Multistage amplifiers-contd…

21

2

211

||||||

vvv

e

Cv

e

eCv

AAA

r

RA

r

RRRRA

b

ei RRRZ b |||| 21

Co RZ

Gain

Input Impedance

Output Impedance

Page 79: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Multistage amplifiers-contd…

• For multistage amplifiers, the individual stages have an effect on the overall response.

• With different cutoff frequencies, the dominant lower cutoff frequency is equal to the highest fcl; the dominant upper critical frequency is equal to lowest fcu.

• When the critical frequencies for multistage amplifiers are equal, the lower critical frequency is higher than any one as given by

Page 80: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Multistage amplifiers-contd…

'

12 1

clcl

n

ff

and the upper critical frequency is given by

1' 2 1ncu cuf f

Lower critical frequency is higher than any one as given by

Page 81: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Multistage amplifiers

Page 82: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Small signal parameters of multi stage Amplifier

Page 83: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Multistage amplifiers-contd…

• Low output resistance from EF provides a low source resistance for CE amplifier so good matching of output of EF to input of CE amplifier

• High frequency response (3dB frequency) for Cascade Amplifier is improved over CE amplifier.

Page 84: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

CE-CC

• The cascade of a Common Emitter amplifier stage followed by a Common Collector amplifier stage can provide a good overall voltage amplifier 

Page 85: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

CE-CC-contd…

• The Common Emitter input resistance is relatively high and Common Collector output resistance is relatively low.

• The voltage follower second stage, Q2, contributes no increase in voltage gain but provides a near voltage-source (low resistance) output so that the gain is nearly independent of load resistance.

Page 86: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

CE-CC-contd…

• The high input resistance of the Common Emitter stage, Q1, makes the input voltage nearly independent of input-source resistance. Multiple Common Emitter stages can be cascaded with emitter follower stages inserted between them to reduce the attenuation due to inter-stage loading.

Page 87: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

CE-CE

•Each stage is separately biased and coupled to adjacent stages via DC blocking capacitors.

•Inserting coupling capacitors between stages blocks the DC operating bias level of one stage from affecting the DC operating point of the next.

Page 88: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Frequency Response of Multistage Amplifier

Page 89: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Gain Bandwidth Product

• The gain bandwidth product (GBW) for an amplifier is the product of the open loop gain (constant for a given amplifier) and its 3 dB bandwidth.

This quantity is commonly specified for operational amplifiers, and allows circuit designers to determine the maximum gain that can be extracted from the device for a given frequency (or bandwidth) and vice versa.

Page 90: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Gain Bandwidth Product-contd…

• When adding LC circuits to the input and output of an amplifier the gain raises and the bandwidth decreases, but the product remains constant.

• Measure of the gain-frequency product of an amplifier; unity gain bandwidth is the frequency at which the open-loop gain becomes unity, based on 6 decibels per octave crossing.

Page 91: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Gain Bandwidth Product-contd…

Gain of FET A=gmR0 ω= 1/R0Ceq

Gain Bandwidth Product = A. ω = (gmR0) (1/R0Ceq) =gm Ceq If Ceq= Cgs

Then GBW =gmCgs

Page 92: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Cascode Connection

This example is a CE–CB combination. This arrangement provides high input impedance but a low voltage gain.

The low voltage gain of the input stage reduces the Miller input capacitance, making this combination suitable for high-frequency applications.

Page 93: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Darlington Connection

The Darlington circuit provides very high current gain, equal to the product of the individual current gains:

bD = b1 b2

The practical significance is that the circuit provides a very high input impedance.

Page 94: UNIT-IV Frequency Analysis of BJT and MOSFET Amplifiers

Summary

• The circuits gain, (or loss) at each frequency point helps us to understand how well (or badly) the circuit can distinguish between signals of different frequencies.

• For multistage amplifiers, the individual stages have an effect on the overall response.