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© Fraunhofer IVV Various Approaches for High-Barrier Film Development From Low Cost Production to High-End Applications Klaus Noller Esra Kucukpinar Sandra Kiese Oliver Miesbauer Ferdinand Ruess AIMCAL Web Coating & Handling Conference from 30 May – 2 June 2016 Dresden, Germany

Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

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Page 1: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

Various Approaches for High-Barrier Film Development

From Low Cost Production to High-End Applications

Klaus NollerEsra KucukpinarSandra KieseOliver MiesbauerFerdinand Ruess

AIMCAL Web Coating & Handling Conference from 30 May – 2 June 2016 Dresden, Germany

Page 2: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

Outline

Production of high barrier films

Newest results

Summary and outlook

Page 3: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

singleinorganiccoatings

polymers

Aim of High Barrier Film DevelopmentRequirements of Products and Performance of Barrier Films

Sensitive food

OLEDs

Vacuuminsulation

panelsOrganic

photovoltaics

Oxy

gen

perm

eabi

lity

[cm

3 / m

2 ∙ d

∙ ba

r]23

o C /

50%

RH

Inorganicphotovoltaics

10-6 10-4 10-2 100 10210-6

10-4

10-2

100

102

Water vapor transmission rate (WVTR)[g / m2 ∙ d] 23oC / 85% RH

multilayerstructuresroll-to-roll

2016

Source: va-Q-tec

Page 4: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

END PRODUCT Lifetime

EnvironmentStresses

Cost

Compatible

Climatestable

Large areaproductionLow cost

Barrierto gases

water

oxygen

Requirements for Barrier films Depend on Application

Page 5: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

1 mm

Barrier defects

Pixel shrinkage

time

Substrate film

Adhesive

Substrate film

1 1

3

32

Device

Barrier layerstack

1. Water permeation perpendicular through the barrier films

2. Side-ingression through adhesive layers (bulk material)

3. Water permeation through the interfaces

John Fahlteich, Encapsulation of flexible Electronics, LOPE-C 2016, Munich, Germany

Water Induced Degradation of OLED on Plastic Films

Page 6: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

1 mm

Barrier defects

Pixel shrinkage

time

Substrate film

Adhesive

Substrate film

1 1

3

32

Device

Barrier layerstack

1. Water permeation perpendicular through the barrier films

2. Side-ingression through adhesive layers (bulk material)

3. Water permeation through the interfaces

John Fahlteich, Encapsulation of flexible Electronics, LOPE-C 2016, Munich, Germany

Water Induced Degradation of OLED on Plastic Films

Page 7: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

O2 H2O

∆p

d

p2

p1

Solution-diffusion model

P = D x S

Polymer substratePolymer

SEM picture: Defects resulting due to thermal stress

SEM picture: Porosity and surface roughness

SEM picture: Defects due to anti-blocking particles

Inorganic layer coatings: Al, AlOx,SiOx

„Defect-dominated“ permeationmechanisms

Cum

ulat

ive

flux

(g/m

2 )C

umul

ativ

eflu

x(g

/m2 )

High Barrier Film DevelopmentBasic Principles of Permeation

Page 8: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

High Barrier Film Development

Vitex material: Four dyads

Affinito J. and Hilliard D.“A New Class of Ultra-BarrierMaterials”, SVC, 2004

Filling of defects

Protective and smoothing layers:

Elimination of nano- and micron-sized particulates

Extended diffusion path-length

Inorganic layers with high intrinsic barrier properties

O2 H2O

Polymer substrate

2-dyads

Ultrabarrier Stack: Alternating inorganic/organic layers

Page 9: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

High Barrier Film Development

Optimization of multilayer films for low permeability and long time lag

Increase of number of dyads

Integration of active absorbers into multilayers

Time [sec]

Slope: Permeability

Perm

eate

dam

ount

/ Are

a [m

ol·m

2 ]

Ultrabarrier Stack: Alternating inorganic/organic layers

Page 10: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

M.M. Schmidt, C. Boeffel, E. Kucukpinar, K. Noller, and H.-C. Langowski, Plastic Electronics, 2010, Germany.

G.L. Graff, R. E. Williford and P. E. Burrows, J. Appl. Phys. 96, 1840 (2004)

~ 1.5 dyadsNo inorganic layer ~ 3 dyads

High Barrier Film DevelopmentUltrabarrier Stack: Alternating inorganic/organic layers

Time Lag Effect: Time dependent permeation data

Flux

(g/m

2 )

0 1000 2000 3000Time (min) Time (days)

0 400 800 1200 1600Time (min)

Time lag = 1.7 hr Time lag = 22 hr

Page 11: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

Polymer substrate: Mechanical carrier Flexible

Inorganic coating: O2 and H2O barrier Brittle and porous ZnSnOx (ZTO), AlOx,

SiOx

Hybrid polymer lacquer: Provides flexibility Planarizes the surface Effectively “decouple” defects Probable filling of pores

TEM cross-section

ORMOCER®

ORMOCER®

inorganic barrier layer

Polymer substrate

SiOx layer

Langowski, H.C., Lope-C, 2009

J. Fahlteich et al., SVC, 2012

http://www.polo.fraunhofer.de/Fraunhofer Polymer Surfaces Alliance POLO®

Multilayer Approach for High BarrierFraunhofer POLO® Multilayer Barrier

Page 12: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV http://www.polo.fraunhofer.de/Fraunhofer Polymer Surfaces Alliance POLO®

Substrate foil

Inorganic coating, 80 – 100 nm

ORMOCER®

Multilayer Approach for High BarrierBarrier Lacquer ORMOCER®

Page 13: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

Barrier film-2

Barrier film-1

Higher mechanical stability Thicker structures

Challenge: Proper adhesive selectionThermal stabilityproblem: 85oC/85%RH

lamination adhesive

back-to-face

lamination adhesive

face-to-face

Multilayer Approach for High Barrier: Low-costLaminated Multilayered Structures

Page 14: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

E-beam evaporationReactive Sputtering

High Barrier Film ProductionCoating Technologies: Roll-to-Roll Deposition Processes

Thermal evaporation

Page 15: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

High Barrier Film ProductionRoll-to-Roll Processes: Atomic layer deposition (ALD)R2R-ALD plant, unwinding unit and reactor

Photo acknowledgements: OSRAM GMBH

• Spatial-ALD (S-ALD) R2R processing at economically viable speeds

• deposition of well-defined, conformal, homogeneous, and almost pinhole-free layers at the atomic/subatomic level

• modified Chemical Vapor Deposition (CVD) process

• deposited in cycles, atom layer by atom layer

• extremely high layer quality

Application areas:Diffusion barriers I Injection, transport, and blocking layers for OLEDs, OPVs I TCOs e.g.AZO I Passivation and buffer layers for OEs and CIGS solar cells I Dielectric materials IOptical coatings, e.g. for light out-coupling in OLEDs I Improvement of wettingcharacteristics for subsequent processes I Anti-bacterial coatings I Anti-corrosion coatingson metal foils I SAMs (Self Assembled Monolayers)

Page 16: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

Lamination / Lacquering under Clean-Room Environment

High Barrier Film ProductionCoating Technologies: Roll-to-Roll Processes

• Protection from dust particles• Enclosed, filtered air• Flow controller

Page 17: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

Substrate quality:• Cleanliness, surface roughness

Thermal and mechanical stability: • Substrate and barrier layers

Production processes: Low cost

Process conditions:• Temperature, Pressure (lamination)

• Web-speed, web tension

• Dust-free coating, no contact on coated side

Quality Control:• Inline (layer thickness, crosslinking degree)

• Off-line (permeation, adhesion, bending stability)

High Barrier Film ProductionBiggest Challenges

Page 18: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

Outline

Production of high barrier films

Newest results

Summary and outlook

Page 19: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

• OPV Lifetime: Up to 20 years• OPV Cost: 0.7 € / wp• Efficiency: 8 -10%

Projectgoals:

SUNFLOWER- "SUstainable Novel FLexible Organic Watts Efficiently Reliable" (FP7-ICT-2011-7, Grant number: 287594 )

Coordinator: Dr. Giovanni Nisato, CSEM, Switzerland

EncapsulationRequirements

WVTR:< 5 x 10-4 [g/(m2·d)] (23oC / 50 % RH)O2 Permeability:

< 1 x 10-3 [cm3/(m2·d·bar)] (23oC / 50 % RH)

TransparencyLow cost

WeatherabilityMechanical stability

Flexibility

OPV Encapsulation

Page 20: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

Lowest WVTR: 5 x 10-4 g/(m2·d) (23oC / 85 % RH)

No barrier loss (1000 cycles, bending radius 5 mm)

Transparency: 90% (> 450 nm) Low cost, large-scale production:

e-beam deposition and lamination processes

< 10 €/m2 (in up-scale scenario)

Novel Barrier Structures for OPV EncapsulationBarrier Layers on Weatherable Substrates

Barrier / adhesive

PET

Weatherable PET(UV-stable, hydrolysis resistant)

Encapsulation material on UV- and hydrolysis stable PET

Page 21: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

Novel Barrier Structures for OPV EncapsulationIntegration of Adhesives

PETBarrier / adhesive

PET

WVTR (extrapolated):

1.2 × 10-3 g/(m2∙d)

0.7 × 10-3 g/(m2∙d)0.6 × 10-3 g/(m2∙d)

Page 22: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV ICT Event, 2015, Lisbon, Portugal

OPV Integration in Windows, Window Blinds, Hand bags,…

Page 23: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV SMARTONICS (2013-2017) Dev. of smart machines, tools and processes for

precision synthesis of nanomaterials with tailored properties for OEs (NMP.2012.1.4-1, 310229) Prof. S. Logothetidis, AUTh, GR

Goals related to high barrier films Water barrier: 10-5 [g/(m2·d)] Compatible to encapsulation

barrier layer (reactive sputtering)

substrate

ORMOCER®

barrier layer (reactive sputtering)Double-sided barrier adhesive

H2O, O2

OPV EncapsulationPilot Line Organic Electronics

Page 24: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

3-layer

5-layer

PET

ORM

ZTO

ZTOORMZTO

PETZTO

ORMZTO

OPV EncapsulationUltra-High Barrier at lower costs!

WVTR(23oC, 50% RH):2 x 10-5 g/(m2·d)(38oC, 90% RH):1 x 10-4 g/(m2·d)

Page 25: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

WVTR [g/(m2·d)] (23oC / 85 % RH)

O2 Permeability[cm3(STP)/(m2·d·bar)]

(23oC / 50 % RH)

P + SiOx 0.3 0.1

Multilayer Structures Mocon® Aquatran® Mocon OX-TRAN®

1 P + SiOx + ORM + SiOx 2 x 10-3 < 5 x 10-3

2 1 / Adhesive / 1 5 x 10-4 < 5 x 10-3

(a) Inorganic barrier layer: e-beam

P + ZTO 0.01 0.05

Multilayer Structures Ca - Test Mocon OX-TRAN®

3 P + ZTO + ORM + ZTO + ORM + ZTO (25 nm) 2 x 10-5 < 5 x 10-3

P: Polymer substrate, ZTO: Zinc-Tin-Oxide

Barrier Performance Overview

(b) Inorganic barrier layer: reactive sputtering

Page 26: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV

Summary and Outlook

High barrier production by multilayer approach Low permeability and long time lag Defect-dominated permeation mechanism, substrate selection Good defect coverage and smoothing effect by ORMOCER®s

Barrier adhesive integration by lamination: Increased number of dyads, cost-effective, longer time lag, high barrier performance

Demonstration of a long-lasting, low cost, flexible OPV: Weatherable PET substrates Integration of barrier adhesives

Fraunhofer POLO® barrier film at low inorganic barrier layer thicknesses! Cost reduction and enhanced mechanical stability

Standardisations needed for high barrier measurements! Necessary for further development of ultra high-barrier films

Page 27: Various Approaches for High-Barrier Film Development · due to thermal stress. SEM picture: Porosity and surface roughness. SEM picture: Defects due to anti-blocking particles. Inorganic

© Fraunhofer IVV 27

Thank you for your interest!

Dr. Klaus [email protected]

+49 8161 491 500

Material development

Fraunhofer Institute for Process Engineering and Packaging (Fraunhofer IVV)Freising, Germany