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NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing. Water: A Key Process Fluid and an Environmental Bottleneck in Semiconductor Manufacturing. Farhang Shadman University of Arizona 1999 Arizona Board of Regents for The University of Arizona. - PowerPoint PPT Presentation
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Shadman
1
Water: A Key Process Fluid and an Environmental Bottleneck in
Semiconductor Manufacturing
Farhang ShadmanUniversity of Arizona
1999 Arizona Board of Regents for The University of Arizona
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
2
Water Usage In Semiconductor Plants
0.0
10.0
20.0
30.0
40.0
50.0
UP
W U
sage (
gallons p
er
square
inch)
10
15
20
25Approximate Mask Levels (+/-2)
Wafer Diameter (in)
56
8
Source: Sematech, 1996
Shadman 148
Goal: Significant reduction in water use for the next three years: 2-3 fold reduction in UPW usage per in2 of Si for the 300 mm wafers.
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
3
WATER AND ENERGY
TECHNOLOGY REQUIREMENTS
1997250 nm
2000180 nm
2003130 nm
2006100 nm
200970 nm
201250 nm
Decrease net feed water use
Gal/in2
30 10 6 5 2 2
Decrease UPW use
Gal/in222 10 7 6 5 5
Lower water purification cost
X 90%X 80%X 70%X 60%X 50%X
Decrease energy consumption
KWh/in2
9 8 7 5 5 4
300MM energy
consumption KWh/in2
4 4 4 3
Solutions Exist
SolutionsBeing Pursued
No Known Solutions
Shadman
4
Strategies to Achieve the UPW Goals
• Replace wet processes:
– The environmental gain is not obvious or guaranteed• Reduce water usage:
– Emphasis on FEOL and rinse processes for FEOL and post-CMP
• Reuse and recycle
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
5
Drivers for Water Conservation Strategies
Improve process and products performance
Lower cost
Insure sustainability in operation and growth
• The three drivers are interdependent
• The three drivers are not contradictory
• Insuring sustainable growth is the primary environmental justification
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
6
Recycle and Reuse Which one is preferred
What are the determining factors?
UPW Plant Rinse Operation
Cooling / Gas Scrubbing
Feed Water
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
7
Determining Factors:• Purity at the POU• Purification cost• System & installation cost• Real risk• Perceived risk
UPW Plant Rinse Operations
Cooling/Scrubbing
UPW Plant Rinse Operations
Cooling/Scrubbing
Reuse
Recycle
• Match the flow rates for supply and demand (water balance)• Match the water quality for supply and demand (optimization)
Guidelines:
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
8
Polishing
UVIEx
S
SecondaryTreatment
Reverse Osmosis UV/Ion Exchange
PrimaryTreatment
Point-Of-Use
Feed
Treatment
Recycle
Polishing Loop
20,000 20,000 20,000
10,000
(400 gpm)
(700 gpm)
(200 gpm)
(130 gpm)
(100 gpm)
(40 gpm)
(160 gpm)
Humic Acid @ 3 ppm
270 gpm with recycle430 gpm without recycle
Recycle/Feed Ratio(R/F)
Point of Use TOCConc. (ppb)
0 4.1
0.30 3.6
0.60 2.1
UPW Quality at POU
0.0
2.0
4.0
0 300 600 900 1200 1500
Time (min)
Co
nce
ntr
atio
n (
pp
b)
TOC
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Effect of Recycle on POU Purity
Shadman
9
Time
Q *
C
Rinse A (QA)
Rinse B (QB)
Area A = Area B
Rinse and Reuse Inter-dependence
UPW Plant Rinse Operations
Q
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
C
Shadman
10
(50)
500 UPW Plant Rinse
1000(30)
500(10)
P500
(100)
500S
(160)
(50)
1000 1000
(150)UPW Plant RinsePresent operation:
(50)
200 200
(550)UPW Plant RinseOption 1: Reduce the rinse flow
Option 2: Keep the rinse flow; add moderate recycle
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Rinse and Recycle Inter-dependence
Shadman
11
(50)
1000 1000
(150)UPW Plant RinsePresent operation:
Option 3: Keep the rinse flow; add aggressive recycle
(50)
50 UPW Plant Rinse
1000(10)
950
(~8)P
950
(~108)
50S
(150)
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Rinse and Recycle Inter-dependence
Shadman
12
(50)
50 500(214)
UPW Plant Rinse500(14)
450
(10)P
450
(~205)
50S
(300)
Option 4: Decrease the rinse flow, combine with recycle
(50)
1000 1000
(150)UPW Plant RinsePresent operation:
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Rinse and Recycle Inter-dependence
Shadman
13
Support Processes(e.g. Cooling,
Gas Scrubbing)
Purification
SegregationSensor/Control
WaferCleaning
UPW Plant
Recycle
ReclaimWaste
Evaporation
Makeup
FeedMakeup
Water Use and Reuse in Semiconductor Manufacturing(Role of Integration in the Design for Environment)
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
14
Adverse Effects of Concentrating the Recycled or Reused Wastewater Stream
• Lowering TOC removal efficiency
• Lowering ion exchange utilization factor
• Being out of range for some of the purification unit processes
• Triggering fouling mechanism
– Biofouling and biofilm
– Corrosion
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
15
UPW Strategic Research Needs for 2003 and Beyond
1. Low water, high performance FEOL and post-CMP rinse
2. Low energy, robust purification processes
3. Advance waste segregation and collection
4. Simulator-based metrology and control
5. Matched supply and demand purity
6. Advanced design tools to facilitate low-cost, low risk, high performance preparation and distribution of UPW
7. Special UPW sub-system for CMP
8. On-line rapid-response multi-component sensors for 3,4,5,7
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
16
Issues and Technology Gaps Related to Water and Wastewater Purification
• Low-energy and low-chemical new purification processes
• Multi-component interactions of process-generated impurities
• Robust purification methods with tolerance to system upsets and transience
• Improved removal of recalcitrant compounds, particularly organic impurities
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
17NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
18Shadman p173
1997250 nm / 200 mm
2003130 nm / 300 mm
2006100 nm / 300 mm
200970 nm / 450 mm
201250 nm / 450 mm
1999, 2001180 nm / 300 mm150 nm / 300 mm
Recycle New PurificationMetrologyAdvancedControl
RecycleConservation
RecycleConservationMetrology
10
20
30
10
20
Net
Fee
d (
gal
/ in
2 )
UP
W U
se (
gal
/ in
2 )
YearTechnology
Trends and Technology Gaps for Water Usage
Strategic SolutionsResearch Gaps
Tactical Solutions
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
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19
FeedTank
Pre-Treatment
PrimaryStorage
Tank
Primary Treatment
UPWPolishingStorage Tank
PolishingTreatment
FABProcessTools
SRWStorage
Tank
UP
W R
etur
n
UP
W S
uppl
y
MunicipalFeed
2nd RO Reject
1st ROReject
UF Reject
UPW System with Recycle Options
Monitoring/Purification
Recycle
Sensor/Divertor
Sensor/Divertor
IWW IWW
Reject
RejectReject
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
20
Structure of the UPW Recycle Simulator
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Water Balance Model (Flow Balance Equations)
Main Program: Simultaneous PDE’s for Species Balance
Rinse Module
Treatment Modules
IEx UV AC
Loop Solver
Dynamic Link
ParameterDatabase
Flow SheetSpecifications
- Impurity concentration (time and location)- Water balance
Input Output User-FriendlyLevel
LinkageLevel
MainCode Level
RO
Shadman
21NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Effect of Recycle on POU Impurity Concentration
Polishing
UVIEx
S
SecondaryTreatment
Reverse Osmosis UV/Ion Exchange
PrimaryTreatment
Point-Of-Use
Feed
TreatmentRecycle
Polishing Loop
20,000 20,000 20,000
10,000
(400 gpm)
(700 gpm)
(200 gpm)
(130 gpm)
(100 gpm)
(40 gpm)
(160 gpm)
Humic Acid @ 3 ppm
270 gpm with recycle430 gpm without recycle
UPW Quality at POU
0.0
1.0
2.0
3.0
4.0
0 300 600 900 1200 1500
Time (min)
Co
nce
ntr
atio
n (
pp
b)
Ionic Impurities at POU
0.000
0.005
0.010
0.015
0.020
0.025
0 300 600 900 1200 1500
Time (min)
Co
ncen
trati
on
(p
pb
)
Calcium
Sulfate
Shadman
22
Importance of Multi-Component Interactions
• A critical technology gap in approaching risk-free recycling.
• Potentials for chemical interactions caused by process- generated reactive compounds; formation of problematic impurities.
• Change in the efficiencies of purification processes.
• Re-entrainment of impurities due to multi-component effect.
• Effect on metrology and control.
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
23
Key Questions
What are the important impurities?
Which impurities are trouble makers in UPW systems with recycle?
How can we remove these harmful impurities?
How should we collect the waste water: mixed or segregated; diluted or concentrated?
What are the treatment options?
Given the above information, how do we design a recycle system, optimize it, or control its operation? Issues: effectiveness, cost and reliability.
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
24
Organic Impurities
Problems:
• Proven detrimental effect on yield Wide variety of impurities with different properties Conversions and reactions Recalcitrant impurities
Removal Method:
• Separation by membranes and filters Adsorption Degasification Chemical reactions (oxidation, decomposition)
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
25NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Experimental Setup for Adsorption Studies(Ion Exchange and Activated Carbon Application)
UPW
System
Impurity
Source
Adsorption M
ediaColumn Wall
Cup Filter
TOC Analyzer Ion
ChromatographUPW Stream
Impurity Stream
Bypass Line
Stainless Steel
Filters
Mixing Tee
Metering Pump
3-Way Valve
Metering Valve
To Drain
Sample Ports
Shadman
26
XI X I: ReactionLocal
ii
i
idi
iiai
isa1
sk
sa1sck
ts
:onConservati PhaseAdsorbed
2i
2iii
zc
Dzc
Uts
1tc
:onConservati PhaseFluid
i
iosss
:onConservati Sites
U
Z
S = unoccupied site
Si = solid phase impurity
Ci = fluid phase impurity
Activated carbon particle
Competitive adsorption
Dispersion
Convection
Dynamics of Multicomponent Impurity Removal by Adsorption
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
27
Secondary Contamination due to Desorption of IPA from Activated Carbon
0
100
200
300
400
500
600
700
800
900
0 50 100 150 200 250 300 350 400 450
Time (min)
TO
C (
ppb
) 15" column
9" column
6" column
UPW
Start 100 ml/min of 10 ppm HCl thru column
Start 100 ml/min of UPW thru column
Secondary Contamination
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
28
0
100
200
300
400
500
600
700
800
900
0 50 100 150 200 250 300
Impurity Release due to Multicomponent Interactions(Adsorption on Activated Carbon)
Flu
id P
hase
Con
cent
ratio
n (p
pb)
Time (min)
Inlet Concentration for Component A 700 ppb
Component A Multicomponent
Component A Single Component
Component B Multicomponent
Component A onlyBoth components
A and B
Net impurity release from the column
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
29
0
100
200
300
400
500
600
700
0 100 200 300 400 500
6” Test column
9” Test Column
12” Test Column
15” Test Column
Model Fit
Model Deviation due to Fluid Retention in Pores
Flu
id P
hase
Con
cent
ratio
n (p
pb)
Desorption of IPA from Activated Carbon
Time (min)
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
30
0
100
200
300
400
500
600
700
0 100 200 300 400 500 600
Start 150 ml/min of 150 ppb IPA thru column
6” Test column
9” Test Column
12” Test Column
15” Test Column
Model Fit
Adsorption of IPA on Activated CarbonF
luid
Pha
se C
once
ntra
tion
(ppb
)
Time (min)
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
31
Water Softener
AC Prefilter
Ion Exchange
RO TankRO #1
Ion Exchange
10 gal Tank
100 GalTank
185 nm UV
Degassifier
Ion Exchange
Ion Exchange
Ultra Filter
Recycle Tank To Drain
RO #2
Polish Loop
Recycle Loop
Primary TreatmentPre-Treatment
Bypass
Bench-Scale UPW Testbed
Feed
Pump
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
32
HP Recycle System with IPA
Carbon Bed
Cation Exchange
Anion Exchange
254 nm UV
3000 gal.
Bypass Bypass
Return
RO Storage
Tank
Spent Rinse Water
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
0
50
100
150
200
250
300
0 20 40 60 80 100 120 140 160
Con
cent
rati
on (
ppb)
Time (min)
Data
Model
Shadman
33
Trends and Technology Gap for Energy Usage
0
5
10
1997 1999 2003 2006 2009 2012
Year of Production
KW
h /
in2
200400600800
10001200
1997 1999 2003 2006 2009 2012
Year of Production
KW
h /
wa
fer Tactical Solutions
Strategic SolutionsResearch Gap
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
34
Organics
Organics
Water
Water
UV
Membrane Support
Catalytic sites
Flow-through configuration(oxidation and filtration)
Tangential configuration(oxidation and degasification)
Two Configurations Under Development
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
35
Catalytic Membrane Experimental Setup
UV Source
Gas In Gas Out
Quartz Window
Reactive Membrane
MembraneSupport
Catalytic Packing
Water
Water Tank
NDIRCO/CO2MS
Capillary
Vacuum Chamber
GC
TOCAnalyzer
UV
Multi-portValve
Purge gas
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
36
Effect of Adsorption on Photocatalytic TOC Removal (Response to 30 ppb IPA in the feed)
0
5
10
15
20
25
30
0 10 20 30 40
Time (min)
IPA
Co
nc
en
tra
tio
n (
pp
b)
Non-catalytic
Photocatalytic
Adsorption
Reaction
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Shadman
37
Catalytic Oxidation of IPA Initial IPA Concentration: 2.2 ppm
0
500
1000
1500
2000
2500
0 50 100 150 200 250 300
Time (min)
IPA
Oxi
datio
n (p
pb)
IPA Oxidized
CO2 Dissolved in Water
UV offUV on
CO2 Degasified through Membrane
NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing