Microsoft PowerPoint - WCU __ _1001_.ppt [ ]•
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l NNFC §
§

FE-(S)TEM
&
&
Nanoindentor
NNFC
3
5
Atomic Scale Analysis : HRSTEM-EELS spectrum EDS Map of QDs (CdSe/ZnS)
0.204 nm
6
GateGate
1μm
B doped
1E17
1E18
1E19
1E20
1E21
1018
1019
1020
1021
100
101
102
103
104
105
1D Dopant(Mg) Profiling by SIMS1D IMP & Diffusion Profiling by SIMS
Dopant Profile Analysis
2 μm
Multi-layered p-n junction profile 2D dopant profiling of a n-MOS
2 μm
Patterning & Circuit Modification
Lay-out and Circuit Analysis
(-1.602 x 10-19 C) - Mass : 9.107 x 10-28 g
l Ion - Particle formed when a neutral atom gains or loses one or more electrons
- Cation : an atom that loses an electron - Anion : an atom that gains an electron
l X-ray - X-rays are electromagnetic radiation - Wavelength : about 100 A to 0.01 A - X-rays by the transitions of inner electrons (light by the transitions of outer electrons)
A beam : a directed flow of particles or waves that carries energy and information (amplitude, phase, frequency…)
Beam & Probe
l Light - Visible rays : 380∼770 - Infrared rays - Ultraviolet rays - LASER
l Probe - Eextremely sharp tip (3-50 nm radius of curvature)
6
- (electron gun) ,
, , Auger X 2
-
7
13
~3
Profile Morphology
Particle
EDS

• SE BSE
• EDS
(Point, Line, Mapping)
: C-U
9
17
lApplication - Observation of surface topology - SE and BSE imaging - EDS element analysis (Point, Line, Mapping)
lSpatial resolution : ~1 nm lDetection element of EDS : C-U
Etch ProfileSurface Image
In te
ns ity
EDS Analysis
Transmission Electron Microscopy
Transmission Electron Microscopy (TEM)
- ·
·
- , , ,
- X EDS ,
EELS
20
l
l EDS (Point, Line, Mapping)
l EELS (Point, Line, Mapping)
• TEM : ~0.2 nm • EDS :
• EELS :
level device profile film
Defect (lattice defect, dislocation ) device
,

(HRTEM)
nm scale (EDS, EELS)
11
21
200 200111
Buried oxide
Silicon fin
EDS (Energy-dispersive X-ray Spectroscopy)
Peak (~1eV)
(point analysis), (line profile), (elemental mapping)
EELS (Electron Energy-Loss Spectroscopy)
• 2 image • contrast artifact
•
peak
( )

EDS: E = 0.013 (Z-1)2 (keV)
•
X
EELS :
EELS
C – U H – U EDS : EELS :
wt% at%
Energy
EDS background
map STEM ( ) Energy filtering EDS : map
EELS : energy filtering
Analysis of Composition
0
100
200
300
400
500
600
700
800
1 9 17 25 33 41 49 57 65 73 81 89 97
SiK
NiK
GeK
Line Profile Si-Ge , , NiSi ,
Si
Focused Ion Beam (FIB)
• Focused Ion Beams can image an IC’s surface as well as add and remove conductors and insulators.
• Focused Ion Beam (FIB) technology allows the capability to locally etch materials by milling a sample surface with a highly focused ion beam. This same beam can also be used to locally deposit conductors and insulators. These operations can be made with submicron precision and give rise to a number of useful applications.
+
e-
e-
e-
e-
e-
e-
28
l Dual Beam ( & ) & l , , , l (Micro Machining) l TEM
2 um
FIB Techniques
TEM
Ion
•RBS •> 1 MeV •2 mm •1-10 nm •Li-U •10-8
Electron
•AES •0.5-10 keV •< 15 nm •< 2 nm •Li-U •10-15
•SEM/EDS •0.3-30 keV •4.5nm •B-U •10-12
•TEM/EDS •100-400 keV •1 nm •B-U •10-17
Probe (SPM)