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FUNCTIONALIZATION AND APPLICATION OF NANOMATERIALS FOR ELECTRONIC APPLICATIONS
Dr Toby SainsburyMaterials Division
National Physical Laboratory,
London, United Kingdom
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FUNCTIONALIZATION AND APPLICATION OF NANOMATERIALS FOR ELECTRONIC APPLICATIONS
Dr Toby SainsburyMaterials Division
National Physical Laboratory,
London, United Kingdom
Visit www.npl.co.uk/ei
OUTLINE
NANOTECHNOLOGY
PROPERTIES OF NANOMATERIALS
2D NANOMATERIALS GRAPHENE
HEXAGONAL BORON NITRIDE
ALTERNATIVE 2D NANOSHEETS
FUNCTIONALIZED NANOMATERIALS
ELECTRONIC APPLICATIONS OF FUNCTIONALIZED NANOMATERIALS CARBON NANOTUBE COMPOSITE SYSTEMS
FUNCTIONALIZED 2D NANOSHEET SYSTEMS
SUMMARY
• Nanotechnology: Technology involving benefits or attributes specifically assigned to the use or inclusion of materials which have one or more of their dimensions less than 100 nm.
– Synthesis of nanomaterials
– Appl ication by assembly, processing, and integration of materials and structures
– Result: Stronger, more conductive, l ighter, brighter, thermally conductive, smaller, faster, cheaper– Bottom l ine. Financial, environmental, medical, societal, and scientific benefits resulting from nanotechnology
• NANOMATERIALS1D NANOMATERIALS
– NANOTUBES: • C , BN, WS2, TiO2
• SnS2, MoS2, Wse
• NbS2– NANOWIRES:
• Si, Ge, CdSe, ZnO, GaN, Au
3D NANOMATERIALS
– NANOPARTICLES
• Au, Ag, Cu, Pd, Pt, SiO2, TiO2, ZnO,
– NANORODS
• CdS, CdSe, PbSe, PbS, Au, Ag
– QUANTUM DOTS
• CdS, CdSe, CdTe, PbS, PbSe, PbTe
– DNA ASSEMBLIES
– TETRAPODS
– PEPTIDE FIBRES
– MX2 ONIONS
• MoS2, WS2– C60
2D NANOMATERIALS
– GRAPHENE………
NANOTECHNOLOGY
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• PROPERTIES
1D NANOMATERIALS
• High aspect ratio
• Highly conductive
• Highly insulating
• Semi ‐conductive
• Super conductive
• UV‐lasing
• Thermally conductive
• High strength
3D NANOMATERIALS
• Size tuneable plasmonic• Conductive
• Semi ‐conductive
• Insulating
• Fluorescent
• Cata lytic
• Biocompatible
• Anti ‐oxidative
2D NANOMATERIALS• GRAPHENE………
NANOMATERIALS
2D NANOMATERIALS: GRAPHENE
PROPERTIES
Conductive (mobility:200,000 cm2v‐1s ‐1) Chemically stability (<400 oC)
Young's modulus: ~1 TPa Surface area: 2630 m2g‐1
Low density (2.3 gcm‐3) Non‐polar bonds (= 0)
Thermal conductivity (~5000 Wm‐1K‐1) Planar structure (sp2)
Optical transmittance : 97.7% Crysta l line
ENVISAGED APPLICATIONS
Thermal management metrology standards ()
Compos ite materials Electronic (sub/super)
Batteries/supercapacitors Sensing and Diagnostics
Optoelectronics Cata lysis
CHALLENGES TO UTILIZATION: exfoliation, compatibilization, large‐area synthesis
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Graphene:Theoretical surface areaHigh intrinsic mobilityHigh Youngs modulusThermal conductivity Optical transmittance band gap Colour
SYNTHESIS CVD, epitaxial SiC, exfoliation
ADVANTAGES reasonably low cost, chemically stable yet highly amenable to specific chemistries. Abundant C as source material.
DRAWBACKS Grain boundaries, defects, dislocations, intrinsic tendency to aggregate and stack.incompatible with large proportion of solvents, resins, condensed phase and molecular compounds. Zero band gap. Highly sensitive to environmental contaminants, substrate effects.
NEED Qual ity control assessment and metrology surrounding standard graphenerel iable, scalable strategies for chemical integration s trategies for production‐scale electronic integration with suitable substrates and electrodes.
RISK Drawbacks are pertinent and realistic reasons why graphene may not reach anywhere near the theoretical potential discussed at present. Highlights the need for metrology, manufacturing and processing research to be accelerated and for chemistries to be investigated. Alternative nanosheet materials require immediate attention.
2D NANOMATERIALS :GRAPHENE
PROPERTIES
Insulator (Eg ~5.5 eV) Chemically stability (0‐850 oC)
Mechanically robust (E2d = 270 Nm‐1) Large surface area
Low density (2.3 gcm‐3) Heteropolar bonds (= 1)
Thermal conductivity (0.3 W.cm‐2.oC‐1) Planar structure (sp2)
Macroscopic colour Crysta lline
ENVISAGED APPLICATIONS
Thermal management Radiation Shielding
Compos ite materials Electronic (sub/super)
Storage/ Fuel Cell Sensing and Diagnostics
Optoelectronics Cata lysis
CHALLENGES TO UTILIZATION: exfoliation, compatibilization, large‐area synthesis
2D NANOMATERIALS :HEXAGONAL BORON NITRIDE
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2D NANOMATERIALS :ALTERNATIVE 2D NANOSHEETS• RANGE OF MATERIAL PROPERTIES
– Band gap 0‐6 eV, conductive to insulating
– Range of optical absorption wavelengths
– Luminescence quantum efficiency 1000 X bulk (MoS2)
– mobi li es2 >60 cm2 V−1 s−1 (MoS2)
– on−off current ra os up to 108 (MoS2)
– Thermoelectric (Bi2Te3)
– Topological insulator (Bi2Te3)
– Range of mechanical properties
– Range of thermal properties
• APPLICATION OF 2D NANOMATERIALS
– cata lysis
– Lubricant additives
– Nanoelectronics
– Sensors
– Nanocomposites
– Batteries
– Supercapacitors,
– Hydrogen storage
– Environmental science
– Metrology s tandards
– Themal management
– Barriers/membranes
– Dielectrics
• KEY FACTORS• Synthesis, manipulation, integration
• Chemical functionalization
FUNCTIONALIZED NANOMATERIALS
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BNNT FUNCTIONALIZATION ITEM CHARACTERIZATION OF BNNTS
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NANOTUBE FUNCTIONALIZATION
NANOTUBE FUNCTIONALIZATION
AMINE‐FUNCTIONALIZED BNNTS:BASE MATERIAL FOR EXTENSIVE LIBRARY OF FUNCTIONALIZED BNNTS
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SELF‐ASSEMBLY: HYBRID SYSTEMS
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BNNT-METAL SYSTEMS: Self-Assembly of Gold Nanoparticles at the Surface of Amine- and Thiol-Functionalized BNNTs
SELF‐ASSEMBLY: HYBRID SYSTEMS
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Typical Low resolution TEM images of DMAP-stabilized palladium nanoparticlesself-assembled at the surface of different thiol-functionalized BNNTs.
Preparation of BNNT‐Pd‐nanoparticle Hybrid Structures
Aqueous suspensions of thiol‐functionalized BNNTs and palladium nanoparticles are combined and allowed equilibrate (6h).
Palladium nanoparticles are self‐assembled at the surface of BNNTs in solution.
Interaction is mediated by the thiol‐Pd covalent bond formation.
SELF‐ASSEMBLY: HYBRID SYSTEMS
21
ELECTRONIC APPLICATIONS OF FUNCTIONALIZED NANOTUBE SYSTEMS
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CdS QRsBNNTs
APPLICATION OF BNNT MATERIALSSENSING AND DIAGNOSTIC
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TEM compatible devices: Standard TEM architectures do not allow electron transmission. Silicon nitride (Si3N4) membranes have been used as electron transparent supports for TEM imaging.
Schematic i llustration of typical TEM compatible device structure.
Fabrication process: (1) Silicon oxide is grown on a sil icon wafer(2) Silicon nitride fi lm is deposited by CVD(3) The sil icon is then selectively back-etched with KOH(4) The oxide and nitride layers are exposed to HF to remove
sil icon oxide.
Electronic Transport properties of Au-NP/BNNT
APPLICATION OF BNNT MATERIALSSENSING AND DIAGNOSTIC
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The charging energy and the energy between step levels are estimated to be 1 eV and 0.25 eV, respectively. The capacitance of the device is approximately 0.16 aF.
(a) Current-voltage (I-V) property of gold nanoparticle-functionalized BNNT on the membrane device, which is measured at room temperature, and (b) a magnified I-V property of (a) and differential conductance plotted versus bias voltage. A series of
current steps is observed.
Current-Voltage characteristic of Gold Nanoparticle-functionalized BNNT structure
APPLICATION OF BNNT MATERIALSSENSING AND DIAGNOSTIC
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3.0x106
2.5
2.0
1.5
1.0
0.5
0.0
Re
sist
anc
e (
)
101
102
103
104
105
106
107
Frequency (Hz)
1.4x10-3
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Co
ndu
ctanc
e (S)
3.0x106
2.5
2.0
1.5
1.0
0.5
0.0
Re
sist
anc
e (
)
101
102
103
104
105
106
107
Frequency (Hz)
1.4x10-3
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Co
ndu
ctan
ce (S
)
532 nm, <5mW
633 nm, =5mW
Optical Response on the Transport Properties of Gold Nanoparticle Functionalized BNNTs
-3.0x106
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
Im[Z
] (
)
3. 0x106
2 .52.01.51.00.50.0Re[ Z] ()
Dark 532nm 633nm
R (M) C (pF)
Dark 2.8 9.2
532 nm 2.6 10.2
632 nm 2.1 13.6
Nyquist plots: Optical Response of DPAP-Au-BNNT device
APPLICATION OF BNNT MATERIALSSENSING AND DIAGNOSTIC
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CARBON NANOTUBE COMPOSITE SYSTEMS
CARBON NANOTUBE POLYMER COMPOSITES
CNT‐Polymer composites Conductive Shielding materials Protective materials High strength composites Thermal management materials
Properties highly dependent on nanotube type and dispersion.
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ELECTRONIC CHARACTERIZATION OF CARBON NANOTUBE EPOXY COMPOSITES
KEY ROLE OF DISPERSION
NANOTUBE STRUCTURE
POOR DISPERSIONPERCOLATIONHIGHLY CONDUCTIVETHERMAL CONDUCTIONPOOR MECHANICAL
CONDUCTIVE POLYMER• ESD MANAGEMENT
• ELECTRODE STRUCTURES
• NLO PROPERTIES
I
V
CHOICE OF NANOTUBE• FIXED WEIGHT PERCENT: 1%
• SWNT• MWNT• DWNT• F‐CNT
• VARIABLE QUALITY• WALL STRUCTURE• DEFECTS• LENGTH• CHEMISTRY
• CLEAR DEMONSTRATION OF VARIABLE DISPERSION: VARIABLE CONDUCTIVITY COMPOSITES
ELECTRONIC CHARACTERIZATION OF CARBON NANOTUBE EPOXY COMPOSITES
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VARIABLE LOADING MWNT‐EPOXY COMPOSITESSINGLE VENDOR NANOTUBES
ELECTRONIC CHARACTERIZATION OF CARBON NANOTUBE EPOXY COMPOSITES
CHEMICAL FUNCTIONALIZATION OF CARBON NANOTUBES Manipulates surface energy of CNTs Introduces chemical functional groups Facilitates compatibility and specific chemical integration via bonding RESULTING DISPERSION DICTATES ELECTRICAL, THERMAL AND
MECHANICAL PROPERTIESS
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ELECTRONIC CHARACTERIZATION OF CARBON NANOTUBE EPOXY COMPOSITES
• HIGH QUALITY DIPSERSION
• ELECTRICAL ANALYSIS
• UNIFORM PROPERTIES
• CORRELATE WITH ALTERNATIVE CHARACTERIZATION
10
5
0
-5
-10
x10
-9
-1000 -500 0 500 1000
MWCNT –CT‐TCT‐1% Epoxy Composite 0 to +/‐1000V
EXCELLENT DISPERSION MECHANICALLY REINFORCING THERMALLY CONDUCTIVE HIGH TURN ON V DIELECTRIC PROPS BREAKDOWN PROTECTION ESD MANAGEMENT MATERIALS
ELECTRONIC CHARACTERIZATION OF CARBON NANOTUBE EPOXY COMPOSITES
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ELECTRONIC CHARACTERIZATION OF CARBON NANOTUBE EPOXY COMPOSITES
ESD AND LIGHTNING STRIKE MANAGEMENT
Application of ESD event 0‐1000 VAnalysis of V vs T
FORMULATION MANIPULATION:
1. High pulse : 1000 V Clamping at 1000 V: conductor
2. Lowering of Vc – clamp voltage
3. CNT loading manipulated Vc
4. Vc controlled: 1000 V clamping at 50 V
V
V
V
T
T
T
ELECTRONIC CHARACTERIZATION OF CARBON NANOTUBE EPOXY COMPOSITES
ESD AND LIGHTNING STRIKE MANAGEMENT
Leakage testing pre and post ESD pulse vs CNT loading
Pre: 10‐10 APost: 10‐4 A
Pre: 10‐10 APost: 10‐6 A
Pre: 10‐10 APost: 10‐10 A
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ELECTRONIC CHARACTERIZATION OF CARBON NANOTUBE EPOXY COMPOSITES
ESD AND LIGHTNING STRIKE MANAGEMENT
V
T (mS)
FUNCTIONALIZED 2D NANOSHEET SYSTEMS
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FUNCTIONALIZED NANOSHEET SYSTEMS
FUNCTIONALIZED H‐BN :OH, COOH, BROMINE
MECHANICAL REINFORCEMENT , THERMAL CONDUCTIVITY, BARRIER COMPOSITES, DI‐ELECTRIC COATINGS, BAND GAP MANIPULATION
FUNCTIONALIZED GRAPHENE: BROMINE, CHLORINE, IODINE
BAND GAP MANIPULATIONSEMI‐CONDUCTING APPLICATIONSSENSING CHEMICAL DERIVITIZATIONCOMPOSITES
FUNCTIONALIZED MoS2 :COOH, OH, PFO, Au, Pd
MECHANICAL REINFORCEMENT , THERMAL CONDUCTIVITY, BARRIER COMPOSITES, BAND GAP MANIPULATIONGAS SENSING
FUNCTIONALIZATION OF BNNSs
Chemical functionalization of h‐BN nanosheets:
Mechanical reinforcement of polymer systems
Indicates chemical compatibilization
Chemical bonding
Utilization of h‐BN intrinsic properties
Implications towards, thermal, barrier, chemical protection,
Dielectric applications
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FUNCTIONALIZATION OF GRAPHENE
Chemical functionalization of Graphene
Distortion of delocalized electron system
Chemical doping
Chemical functionality
Band gap manipulation
Application: Sensing Electronics Composites catalysis
FUNCTIONALIZATION OF MoS2Gold Nanoparticle functionalization of MoS2 nanosheets:
Gas sensing Ammonia H2S SO2
Chemically Functionalized MoS2nanosheets
Carboxy functionalized MoS2Fluorine functionalized MoS2
Applications: sensingCompositeselectronics
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SUMMARY
NANOMATERIAL SYSTEMS
NANOTUBES
2D NANOSHEETS
FUNCTIONALIZATION OF NANOMATERIALS
ELECTRONIC APPLICATIONS OF NANOMATERIALS
SENSORS AND DIAGNOSTIC PLATFORMS
COMPOSITES FOR ELECTRONIC APPLICATIONS
FUNCTIONALIZATION AND APPLICATION OF NANOMATERIALS FOR ELECTRONIC APPLICATIONS
Dr Toby SainsburyMaterials Division
National Physical Laboratory,
London, United Kingdom
Visit www.npl.co.uk/ei
NPL EI Free Technology WebinarsEnvironmental Robustness: Performance Coatings & High Temperature Interconnects
Tuesday 3 September
NPL Cleaning & Contamination Testing – Causes & Cures Webinar
Tuesday 22nd October
Other Group Activity
NPL Cleaning & Contamination Testing Center at Productronica 2013
12-15th November Productronica, Germany
Conformal Coating Application & Testing Center - NEW Electronics Birmingham 2014
8-10th April 2014 NEC Birmingham
www.npl.co.uk/ei