HAPL-14: S. Sharafat 1/25
Ion Implantation in SiC:365 MJ Target Spectra
14th High Average Power Laser Program WorkshopOak Ridge National Laboratory
Oak Ridge, TNMarch 21-22, 2006
S. Sharafat, M. Andersen, Hu Qiyang, and N. GhoniemUniversity of California Los Angeles
Glenn RomanoskiOak Ridge National Laboratory
HAPL-14: S. Sharafat 2/25
OUTLINE
• Ion Implantation Issues (9 slides)
• Possible New Concepts for SiC/SiC (3 slides)
• Supportive Activities: (2 slides)
HAPL-14: S. Sharafat 3/25
R. Raffray, HAPL March 2006
HAPL-14: S. Sharafat 4/25
Implantation CalculationFrom John Perkins' Data on HAPL 350 MJ-Class Baseline Target Design, 10/10/051 H
Elower (keV)
Eupper (keV)
Emid (keV) N (#/keV)
total particles (#)
Flux (#/cm2) [10.1 m Radius]
Percentage (#%)
1H 0.0000001 20 10 5.994E+17 1.1988E+19 1.9469E+12 16.635413720 38.39 29.19 7.535E+17 1.3857E+19 2.2504E+12 19.2287857
38.39 56.77 47.58 4.658E+17 8.5614E+18 1.3904E+12 11.880421956.77 83.94 70.35 3.948E+17 1.0727E+19 1.7421E+12 14.885165183.94 95.64 89.79 2.019E+17 2.3622E+18 3.8364E+11 3.2780007995.64 271.4 183.5 1.197E+17 2.1038E+19 3.4168E+12 29.1945018271.4 457.3 364.4 1.217E+15 2.2624E+17 3.6743E+10 0.31394736457.3 676.2 566.8 1.214E+15 2.6574E+17 4.3159E+10 0.36876638676.2 770.4 723.3 1.143E+15 1.0767E+17 1.7486E+10 0.14941149770.4 1000 885.2 1.11E+15 2.5486E+17 4.139E+10 0.353656571000 2800 1900 9.161E+14 1.649E+18 2.678E+11 2.288243632800 4472 3636 4.47E+14 7.4738E+17 1.2138E+11 1.037123974472 6503 5488 8.743E+13 1.7757E+17 2.8839E+10 0.24640946503 7843 7173 1.31E+13 1.7554E+16 2850880081 0.02435927843 10390 9114 1.209E+13 3.0793E+16 5001014357 0.04273091
10390 12520 11450 9.56E+12 2.0363E+16 3307046879 0.0282568912520 13750 13140 1.085E+13 1.3346E+16 2167393193 0.0185191813750 16590 15170 6.436E+12 1.8278E+16 2968501215 0.025364216590 18210 17400 3.512E+11 5.6894E+14 92400086.4 0.0007895118210 20000 19110 53270000000 9.5353E+13 15485976.1 0.00013232
7.2063E+19 1.1704E+13 95.102289
For each Ion:– Run SRIM at every energy– Add all profiles ( % weighted )
SiC
HAPL-14: S. Sharafat 5/25
Ion Implantation in SiC
• Sample Implantation Profiles using Perkin’s 365 MJ Target Spectra (SRIM2003)
• Profiles for all ions, 1H, 2H, 3H, 3He, 4He, 12C, 13C, Au, Pd were developed
Implantation Profile for 1H Implantation Profile for 12C
0.0E+00
5.0E+15
1.0E+16
1.5E+16
2.0E+16
2.5E+16
0 2000 4000 6000 8000 10000 12000 14000 16000 18000
Mid-Bin Range (Angstr.)12
C /
Mid
-Bin
Ran
ge (
Ato
m/A
ngst
r.)
.
12C Debris + Burn~6.8e19 /shot
R = 10.1 m365 MJ Target
CVD-SiC
0.0E+00
5.0E+15
1.0E+16
1.5E+16
2.0E+16
2.5E+16
0 2000 4000 6000 8000 10000 12000 14000
Mid-Bin Width (Angstr.)
1H
/ M
id-B
in W
idth
(a
tom
/An
gst
r) .
1H (Debris+Burn)~7.2e19/shotR = 10.1 m
365 MJ TargetCVD-SiC
Range
Ra
ng
e
HAPL-14: S. Sharafat 6/25
Ion appm (atomic parts per million) Profile in SiC Per Shot
1.00E-08
1.00E-07
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
1.00E+00
0 5000 10000 15000 20000 25000
Mid-Bin Range (Angstr.)
Ato
m /
106
SiC
/ M
id-B
in R
an
ge
(a
pp
m/A
ng
str.
) .
1H
2H
3H
4He
12C
13C
Au
Pd
Pd
3H
12C
4He
2H
3H
4He
12C
1H
Debris + Burn IonsR = 10.1 m
365 MJ TargetCVD-SiC1H
13C 13
CAu
2H
13C
12C
13C
12C
HAPL-14: S. Sharafat 7/25
0
10
20
30
40
50
60
70
80
0 1000 2000 3000 4000 5000
Mid-bin Energy (keV)
Fra
ctio
n of
Ion
at
Mid
-Bin
Ene
rgy
(%)
2H
3H
4He
1H
3He
12C
13C
Fraction of Ions at Mid-Bin Energy
HAPL-14: S. Sharafat 8/25
Ion Damage in SiC per Shot
• Ion Damage Profile (SRIM2003) for: 1H, 2H, 3H, 3He, 4He, 12C, 13C, Au, Pd
0.0E+00
1.0E+18
2.0E+18
3.0E+18
4.0E+18
5.0E+18
6.0E+18
0 20000 40000 60000 80000 100000
Mid-Bin Range (Angstr.)
Vac
acny
/M
id-B
in R
an
ge (
#/A
ngst
r.)
.
Vacancy Generation Profile for 4He Vacancy Generation Profile for 12C
0.00E+00
1.00E+18
2.00E+18
3.00E+18
4.00E+18
5.00E+18
6.00E+18
7.00E+18
8.00E+18
9.00E+18
0.00E+00
2.00E+03
4.00E+03
6.00E+03
8.00E+03
1.00E+04
1.20E+04
1.40E+04
1.60E+04
1.80E+04
Mid-Bin Range (Angstr.)
Vac
ancy
/ M
id-B
in R
an g
e (#
/Ang
str.
)
HAPL-14: S. Sharafat 9/25
Ion Damage in SiC per Shot
1.00E-09
1.00E-08
1.00E-07
1.00E-06
1.00E-05
1.00E-04
0 5000 10000 15000 20000 25000 30000
Mid-Bin Range (Angstr.)
Da
ma
ge
/ M
id-B
in R
an
ge
(d
pa
/An
gs
tr.)
.
1H
2H
3H
12C
13C
Au
Pd
4He
Total
Pd
1H
3H
12C
13C
Au
4He
12C
Total
2H
3H
4He
HAPL-14: S. Sharafat 10/25
Carbon Implantation and Formation of WC
0.0E+00
2.0E+23
4.0E+23
6.0E+23
8.0E+23
1.0E+24
1.2E+24
0.0E+00 5.0E-07 1.0E-06 1.5E-06 2.0E-06 2.5E-06 3.0E-06
Depth (m)
Car
bo
n C
on
cen
trat
ion
(1/
m 3
) .
100 Shots
50 Shots
30 Shots
20 Shots
10 Shots
Carbon Impl.
W = 6.34x1028 /m3
R=10.1 m405 MJ Target
Carbon Concentration Profile Evolution in W
13th HAPL Meeting
HAPL-14: S. Sharafat 11/25
Formation of WC
• At 2000 oC solubility of C in Tungsten is of the order of 0.05 at. %
Solubility of C in W:
UCLA FusionNETWORK
fusionNET.seas.ucla.edu
• WC forms between 1150 and 1575 K
• W2C forms between 1575 and 1660 KD. Gupta, Met.Trans. A 1975
Carbon reacts with Tungsten to form WC and W2C inside the W-armor
Complex model: (1) Chemical reaction; (2) Diffusion; (3)T-swings; (4) T-gradients.
Need for Experiments on WC:
Effect of H and He implantation on
- Mechanical Properties of WC
- Helium and Hydrogen Release
Discussions with ORNL(G. Romanoski ) have identified testing facilities (G. Romanoski )
HAPL-14: S. Sharafat 12/25
Carbon Implantation in SiC
60.7 10C
SiC
0
0.005
0.01
0.015
0.02
0.025
0 5000 10000 15000 20000
Mid Bin Range (Angstr.)
C/1
06 SiC
/ M
id B
in (
ap
pm
/An
gstr
.) . 12C Debris + Burn
~6.8e19 /shotR = 10.1 m
365 MJ TargetCVD-SiC
Implantation of 12C per shot:
• Carbon Implantation range: 1.75 m
• For 10.1 m chamber implantation range has ~1x1026 SiC• Number of C per shot: ~6.8x1019 C/shot:
After 1x106 shots (~1.2 days) C/SiC ratio approaches unity (or SiC2) assuming
no diffusion
Concerns Regarding Excess Carbon in SiC:
• Carbon diffuses readily (int. + substit./detrapping)
• Carbon can bond chemically with H, D, and T
• Formation of Hydro-carbons CxHy T retention?
Chemical Trapping of H, D, T slows down proton diffusion, defect annealing, and may interact synergistically with He
Pursuing rate of Hydro-Carbon formation
[Huanchen, Ghoniem 1994]
HAPL-14: S. Sharafat 13/25
Hydrogen Implantation in SiCImplantation of H, D, T :
SEM micrograph image of blisters formed in the 6H-SiC
irradiated at 300 K (1.0x1017 H+/cm2) and then annealed at
1070 K for 20 min. [Jiang, NIMB2000]
HAPL:365 MJ Target
10.1 m Chamber
~ 1x1016 H/m2
Roughening of SiC (HAPL conditions?) Effect of Chemical Trapping of H, D, T on roughening? Experiments: H+-+ He beam (HAPL conditions)?
Taguchi, JNM2004: Synergistic effect of H, He, +Si implantation:
Only He-implantation no bubbles at 1300 oC (Timpl)
Dual/Tripple (He, H, Si) Helium bubbles formed at GB
HAPL-14: S. Sharafat 14/25
Possible New Concepts for SiC Armor
• Nanopillars and Dendrites
• Ion-Barrier Coating (IBC)
• Flexible Armor w/o Transpiration Cooling
HAPL-14: S. Sharafat 15/25
Possible New Concepts for SiC Armor: Nanopillar
Helium Implantation in CVD SiC:26.3 MeV with 51 degrader foils shows DENUDED ZONE ~0.5 m near Grain Boundary
[Poster by Hu Qyiang]
Nanopillars:[Chen, Jung, Trinkaus, PRB 2000]
{
HAPL-14: S. Sharafat 16/25
Possible New Concepts for SiC Armor: Nanopillars & Dendrites
Surface textures that were achieved in black W coatings applied to W [Ultramet 2005]
High emissivity CVD dendritic Re coatings applied to solid CVD Re surfaces [Ultramet,2005]
Dendrites “Cauliflower”
• Concept is based on:• Make use of characteristic diffusion length of helium (Denuded Zones in SiC ~0.5 um)• Choose materials which have <1 um size features: dendrites, pillars, cauliflower
HAPL-14: S. Sharafat 17/25
Possible New Concepts for SiC Armor: IBC Coating
The UEET (Ultra Efficient Engine Technology; NASA) is developing SiC/SiC composites with EBC
(EBC: Environmental Barrier Coatings)
• EBC have low thermal k
Ion-Barrier Coating (IBC) SiC Armor:
Doug Freitag301.570.3821
[email protected] April 2002
New EBC with no degradation: 300h, 1400oC (2552 F) 1h cycles, 90 H2O-bal O2
{Melt-Infiltrated SiC/SiC
Glass-forming materials have a relatively open crystal structure, which enhances ion release and self-healing.
Is there a combination of high thermal conductivity materials that could be combined with glass forming materials. (Si3Ni4-
MoSi2, Si3N4-SiC, SiOxNyBz ) that will allow for high release of
implanted ions ?
HAPL-14: S. Sharafat 18/25
Possible New Concepts for SiC Armor: Flexible w/o Transpiration Cooling
Use a Flexible Fibers
o No matrix material
o Fibers should be ~few microns in diameter to enhance Ion-release
o Keep armor flexible to accommodate loads
Flexibel SiC-Fiber 2/3-D Weave Armor with Transpiration Cooling:
Sylramic™ SiC Fiber 2-D Weave
Concern:
• Thermal conduction path of the weave to underlying structure.
Wetted-Solid Evaporative Cooling
• Wick sufficient liquid to serve as a sacrificial layer to take care of all ions
• Use structure (W-fibers, dendrites, nanopillars, nano-grains) to hold liquid and to conduct heat
HAPL-14: S. Sharafat 19/25
OUTLINE
• Ion Implantation Issues (9 slides)
• Possible New Concepts for SiC/SiC (3 slides)
• Supportive Activities: (2 slides)
HAPL-14: S. Sharafat 20/25
FusionNET™ Database: Update
Predicted Values Ref. 1 (1.5mm) Ref. 1 (2.5mm)Temperature Total Elongation Temperature Total Elongation Temperature Total Elongation(C) (%) (C) (%) (C) (%)
800 2.54 21 0.5 21 0.7850 3.66 21 0.8 21 0.5900 4.85 21 0.8 1093 11950 6.1 649 7 1093 11
1000 7.39 649 7 1371 121050 8.71 1093 8 1371 111100 10.06 1093 8 1649 701150 11.41 1371 9 1649 831200 12.77 1371 10 1927 701250 14.13 1649 71 1927 691300 15.46 1649 60 2204 241350 16.76 1927 59 2204 321400 18.01 1927 50 2482 221450 19.22 2204 221500 20.36 2204 241550 21.43 2482 211600 22.42 2482 10
A new category has been added to FusionNET™:
─ ITER Materials Handbook
All ITER Tungsten Properties are available: · Density
· Electrical Resistivity· Emissivity· Enthalpy· Fatigue S-N Curve· Poisson's Ratio· Reduction in Area· Specific Heat· Tensile Strength· Thermal Conductivity· Thermal Expansion· Total Elongation· Uniform Elongation· Vapor Pressure· Yield Strength· Young's Modulus
ITER Li, Be, ClidCop, 316 (LN)IG being uploaded
E_t = -0.0434 + (1.8524x10 -̂4)T - (1.954x10 -̂8)T 2̂ = 0.0104T= 300 (°C) (300 < T < 3500°C)
Emissivity (W):
HAPL-14: S. Sharafat 21/25
HiCAT- A Novel In-situ Mass Loss Diagnostic Tool
A compact (~15 mm diam.), high power hollow pulsed cathode discharge has been developed to ionize vaporized/ablated chamber wall material.
Quantitative spectroscopy is used to determine :─ Species Composition, and ─ Density of ablated/vaporized material
High sensitivity, high time resolution detection (< 100 ns)
Operation in Argon background gas (0.01-10 torr) or as vacuum arc
Studied Chamber clearing in Z-Pinch
L. Schmitz, P. Calderoni, Y. Tashima, A. Ying (MAE-UCLA)
Schematic of HiCAT device
Measured Lithium density compared to
vapor pressure equilibrium density
(pAr= 0.3 torr)L. Schmitz et al., J Nucl. Mat.
337-339 (2005) 1096
~1.5 cm
HAPL-14: S. Sharafat 22/25
Summary and ConclusionsIon Implantation:
“Busy” implantation region (~10-20 m in SiC; < 5 m in W)
Synergy of implanted H and He (He-trapping, SiC, W)
Chemical interaction of excess carbon with H, D, T (SiC, W)
WC formation is favored because of low solubility and large negative Gibbs Free Energy of Formation
Roughening of SiC due to low energy H implantation
Concepts:
• Nanopillars/Dendrites: < 1um to enhance ion release from SiC
• IBC: Ion-Barrier Coating with glass formers to enhance ion release
• Flexible (fiber) w/o Transpiration cooling
Supportive Activities:
FusionNET™: ITER MPH Tungsten have been added to FusionNET™ Mass Loss Analyzer: In-situ mass-loss analyzer (scan rate >100 ns).
HAPL-14: S. Sharafat 23/25
Background Slides
HAPL-14: S. Sharafat 24/25
Ion Implantation Profile in SiC per Shot
1E+15
1E+16
1E+17
1E+18
0 5000 10000 15000 20000 25000
Mid-Bin Range (Angstr.)
Ato
m /
Mid
-Bin
Ra
ng
e (
Ato
m/A
ng
str.
) .
1H
2H
3H
4He
12C
13C
Au
Pd
1H
3H
12C
4He
2H
4He
3H
12C
1H
Debris + Burn IonsR = 10.1 m
365 MJ TargetCVD-SiC
12C
12C
HAPL-14: S. Sharafat 25/25
1.E+16
1.E+17
1.E+18
1.E+19
1.E+20
1.E+21
0 2000 4000 6000 8000 10000Mid Bin Energy (keV)
Ions
at
Mid
-Bin
Ene
rgy
(#)
2H
3H
4He
1H
3He
12C
13C
From J. Perkin’s HAPL 365 MJ Target
HAPL-14: S. Sharafat 26/25
HiCAT Pulsed High Power OperationEmission Spectrum of > 80% Ionized
Pulsed Argon Plasma
100
300
500
700
300 400 500 600 700 800
Wavelength [nm]
Inte
nsi
ty [
a.u
.]
Ar Ion Lines
• High density, nearly fully ionized plasma (n < 1017 cm-3, kTe < 2 eV) with local thermodynamic equilibrium (LTE) allows simplified spectroscopic determination of plasma parameters needed to interpret materials spectra.
• A Rapid sequence of pulses allows high time resolution (< 100 ns) analysis of mass loss, ablated/vaporized material density, and species composition.
• Works in Argon background or as vacuum arc.
Ar Neutral Lines
Z-BoxTest Chamber(Vacuum Capable Glove Box)
Lens
Fiber Optic
Capacitor Bank2 kJ
Dual 0.27 m Monochromators
Ocean Opticscompact
spectrometer
PMTPMT
HAPL-14: S. Sharafat 27/25
HiCAT Diagnostics (Continuous operation)
End-on View of HC Discharge in Argon
Schematic showing spectroscopy and Langmuir probe set-up
Plasma Parameters obtained from Probe data
Ar Ion lines
Ar neutral lines
Low current, low plasma density; minimally invasive diagnostics;highest trace detection sensitivity under equilibrium conditions. Required back-ground pressure 0.01-10 torr Argon
Emission Spectrum
HAPL-14: S. Sharafat 28/25
Density Profiles (SRIM)
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
0 2 4 6 8 10
Implantation Depth (um)
Ion
per
Tun
gste
n A
tom
(ap
a)He-Burn
C-Debris
He-Debris
Au-Debris
10.1Radius: m
154 MJ Target
He-Burn
He-Debris
C-Debris
Au-Debris
DEBRIS-IONS
12th HAPL Meeting
HAPL-14: S. Sharafat 29/25
• High T implantation: ~2x1017 T/m2 per shot for a R=10.1 m chamber.
• Effects of Carbon on T retention at High Temperatures?
Impact of Carbon Implantation: Tritium Retention
1.E+15
1.E+18
1.E+21
0 2 4 6 8 10 12
Mid Bin Implantation Depth (um)
Ion
s /
um
Carbon-12 (Debris)
He-4 Debris
Au (Debris)
He4-Burn
Tritium (Debris)
He4-Debris(~2e19 /shot)
Tritium (Debris): ~ 3e20 / shot
Radius: m6.5
Irradiated tungsten at 653K with carbon concentration as a
parameter (1 keV ~7× 1024 H/m2
[Ueda,2004].
HAPL-14: S. Sharafat 30/25
Self-Damage (Defect) Rate Profiles (SRIM)
0
100
200
300
400
500
0 1 2 3 4 5
Implantation Depth (um)
Ins
tan
tan
eo
us
Da
ma
ge
Ra
te
(dp
a/s
) Carbon-12 (Debris)
He-4 Debris
He-4 (Burn)
Au (Debris)
T-Debris
D-Debris
He-Debris
He-Burn
C-Debris
Au-Debris Radius: m10.1
D-Debris
T-Debris