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November 2013
©2006 Fairchild Semiconductor Corporation FDB2710 Rev. C1
www.fairchildsemi.com1
Absolute Maximum Ratings TC = 25°C unless otherwise noted
FDB2710N-Channel PowerTrench® MOSFET 250 V, 50 A, 42.5 mΩ
Features• RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
• Low Gate Charge
• High Performance Trench Technology for Extremely LowRDS(on)
• High Power and Current Handing Capability
General DescriptionThis N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications • Synchronous Rectification
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
GS
D
D2-PAKG
S
D
FDB
2710 — N
-Channel Pow
erTrench® M
OSFET
Thermal CharacteristicsSymbol Parameter FDB2710 Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 0.48 °C/W
RθJA
40
°C/W
RθJA
62.5
°C/W
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (1 in2 pad of 2 oz copper), Max.
Symbol Parameter FDB2710 UnitVDS Drain-Source Voltage 250 V
VGS Gate-Source voltage ± 30 V
ID Drain Current - Continuous (TC = 25°C)- Continuous (TC = 100°C)
5031.3
AA
IDM Drain Current - Pulsed (Note 1) See Figure 9 A
EAS Single Pulsed Avalanche Energy (Note 2) 145 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)- Derate above 25°C
260 2.1
WW/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds 300 °C
©2006 Fairchild Semiconductor Corporation FDB2710 Rev. C1
www.fairchildsemi.com2
Package Marking and Ordering Information
FDB
2710 — N
-Channel Pow
erTrench® M
OSFET
Device Marking Device Package Reel Size Tape Width QuantityFDB2710 FDB2710 D2-PAK 330 mm 24 mm 800 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Conditions Min Typ Max UnitOff Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 250 -- -- V
ΔBVDSS/ ΔTJ
Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.25 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0VVDS = 250V, VGS = 0V,TC = 125°C
----
----
1500
μAμA
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 4.0 5.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 25A -- 36.3 42.5 mΩ
gFS Forward Transconductance VDS = 10V, ID = 25A -- 63 -- S
Dynamic Characteristics
Ciss Input CapacitanceVDS = 25V, VGS = 0V,f = 1.0MHz
-- 5470 7280 pF
Coss Output Capacitance -- 426 570 pF
Crss Reverse Transfer Capacitance -- 97 146 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 125V, ID = 50AVGS = 10V, RGEN = 25Ω
(Note 4)
-- 80 170 ns
tr Turn-On Rise Time -- 252 515 ns
td(off) Turn-Off Delay Time -- 112 235 ns
tf Turn-Off Fall Time -- 154 320 ns
Qg Total Gate Charge VDS = 125V, ID = 50AVGS = 10V
(Note 4)
-- 78 101 nC
Qgs Gate-Source Charge -- 34 -- nC
Qgd Gate-Drain Charge -- 18 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 150 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 50A -- -- 1.2 V
trr Reverse Recovery Time VGS = 0V, IS = 50AdIF/dt =100A/μs
-- 163 -- ns
Qrr Reverse Recovery Charge -- 1.3 -- μC
Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C3. ISD ≤ 50A, di/dt ≤ 100A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2006 Fairchild Semiconductor Corporation FDB2710 Rev. C1
www.fairchildsemi.com3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.1 1 101
10
100
* Notes :1. 250μs Pulse Test2. TC = 25oC
VGS
Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V
Bottom : 5.5 V
I D,D
rain
Cur
rent
[A]
VDS,Drain-Source Voltage[V]
500
64 8 101
10
100
-55oC
150oC
* Notes :1. VDS = 20V2. 250μs Pulse Test
25oC
I D,D
rain
Cur
rent
[A]
VGS,Gate-Source Voltage[V]
250
0 25 50 75 100 125 1500.02
0.03
0.04
0.05
0.06
0.07
* Note : TJ = 25oC
VGS = 20V
VGS = 10V
RD
S(O
N) [
Ω],
Dra
in-S
ourc
e O
n-R
esis
tanc
e
ID, Drain Current [A]20. 0.4 60. 0.8 01. .1 2
1
10
100
TA = 150oC
I S, R
ever
se D
rain
Cur
rent
[A]
VSD, Body Diode Forward Voltage [V]
TA = 25oC
150* Notes : 1. VGS=0V2. 250μs Pulse Test
10 1- 100 1010
3000
6000
9000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd
* Note:1. VGS = 0V2. f = 1MHzCrss
Cap
acita
nces
[pF]
VDS, Drain-Source Voltage [V]30 0 10 20 03 04 50 60 07 80
0
2
4
6
8
10
* Note : ID = 50A
VDS = 50VVDS = 125VVDS = 200V
V GS,
Gat
e-So
urce
Vol
tage
[V]
Qg, Total Gate Charge [nC]
FDB
2710 — N
-Channel Pow
erTrench® M
OSFET
©2006 Fairchild Semiconductor Corporation FDB2710 Rev. C1
www.fairchildsemi.com4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
* Notes : 1. VGS = 0V 2. ID = 250μA
BV D
SS, [
Nor
mal
ized
]D
rain
-Sou
rce
Bre
akdo
wn
Volta
ge
TJ, Junction Temperature [oC]-100 -50 0 50 100 150 2000
1
2
* Notes :1. VGS = 10V2. ID = 25A
r DS(
on),
[Nor
mal
ized
]D
rain
-Sou
rce
On-
Res
ista
nce
TJ, Junction Temperature [oC]
2.5
25 50 75 100 125 1500
10
20
30
40
50
60
vs. Case Temperature I D
, Dra
in C
urre
nt [A
]
TC, Case Temperature [oC]1 10 100
0.01
0.1
1
10
100
400
1ms
10 ms
DC
Operation in This Area is Limited by R DS(on)
* Notes :1. TC = 25oC
2. TJ = 150oC3. Single Pulse
100μs
Dra
in C
urre
nt, I
D [A
]
Drain-Source Voltage, VDS [V]
500
10-5 10 4- 10-3 10-2 10 1- 100 10110 3-
10-2
10-1
100
0.01
0.1
0.2
0.05
0.02
* Notes :1. ZθJC(t) = 0.48oC/W Max.2. Duty Factor, D=t1/t23. TJM - TC = PDM * ZθJC(t)
0.5
Single pulse
Z θJC
(t), T
herm
al R
espo
nse [o
C/W]
Rectangular Pulse Duration [sec]
t1
PDM
t2
FDB
2710 — N
-Channel Pow
erTrench® M
OSFET
©2006 Fairchild Semiconductor Corporation FDB2710 Rev. C1
www.fairchildsemi.com5
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VVGSGS
VVDSDS
1010%%
90%90%
ttd(d(onon)) ttrr
tt onon tt ofofff
ttd(d(ooffff)) ttff
VVDDDD
VVDSDSRRLL
DUDUTT
RRGG
VVGSGS
VGS
IG = const.
VVGSGS
FDB
2710 — N
-Channel Pow
erTrench® M
OSFET
©2006 Fairchild Semiconductor Corporation FDB2710 Rev. C1
www.fairchildsemi.com6
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
••
DUTDUT
VVDSDS
++
__
DrivDrivererRRGG
SamSamee T Tyyppee as DUTas DUT
VVGSGS •• ddvv//dtdt ccoontntrroolllleedd b byy R RGG
IISDSD ccoonnttrroolllleedd by by pu pullsse pee perriiodod
VVDDDD
LLLII SDSD
1010VVVVGSGS
( Driv( Driver )er )
II SDSD
( DUT )( DUT )
VVDSDS
( DUT )( DUT )
VVDDDD
BoBodydy D DiiooddeeForForwward Vard Voollttagage Dre Dropop
VVSDSD
IIFMFM , Bo, Bodydy DiDiodode Fe Foorrwwaarrd Cd Cuurrrrenentt
IIRMRM
BoBodydy D Diiodode Re Reevveerrssee C Cuurrrreenntt
BoBodydy Di Diodode e RReecovcoveerryy dvdv/d/dtt
didi/d/dtt
D =D =D = ------GateGateGate--------------------------- P P Puuulllsss------------------------e e e WWWiiiddd---------------ttthhhGaGaGate Pute Pute Pulllssseee PePePerrriiiododod
--- ---
FDB
2710 — N
-Channel Pow
erTrench® M
OSFET
©2006 Fairchild Semiconductor Corporation FDB2710 Rev. C1
www.fairchildsemi.com7
FDB
2710 — N
-Channel Pow
erTrench® M
OSFET
Mechanical Dimensions
Dimension in Millimeters
TO-263 2L (D2PAK)
Figure 16. 2LD, TO263, Surface Mount
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2006 Fairchild Semiconductor Corporation FDB2710 Rev. C1
www.fairchildsemi.com8
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PRODUCT STATUS DEFINITIONSDefinition of Terms
AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®
Dual Cool™EcoSPARK®
EfficentMax™ESBC™
Fairchild®
Fairchild Semiconductor®FACT Quiet Series™FACT®
FAST®
FastvCore™FETBench™FPS™
F-PFS™FRFET®
Global Power ResourceSM
GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®OptoHiT™OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™Programmable Active Droop™QFET®
QS™Quiet Series™RapidConfigure™
Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®
STEALTH™SuperFET®
SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®
SyncFET™
Sync-Lock™®*
TinyBoost®TinyBuck®
TinyCalc™TinyLogic®
TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*SerDes™
UHC®
Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™
®
™
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Rev. I66
tm
®
FDB
2710 — N
-Channel Pow
erTrench® M
OSFET
www.onsemi.com1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.
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