6in1 IGBT Module Spec.No.IGBT-SP-10011-R4 (P1/8)

MBB600TV6A

Silicon N-channel IGBT

1. FEATURES * High speed, low loss IGBT module. * Low thermal impedance due to direct liquid cooling. * High reliability, high durability module.

2. ABSOLUTE MAXIMUM RATINGS (Tc=25oC )

Item Symbol Unit Specification Collector Emitter Voltage VCES V 650

Gate Emitter Voltage VGES V 20

Collector Current DC IC

A 600

1ms ICp 1200

Forward Current DC IF

A 600

1ms IFM 1200

Maximum Junction Temperature Tjmax oC 175

Temperature under switching conditions

Tjop oC -40 ~ +150

Storage Temperature Tstg oC -40 ~ +125

Isolation Voltage VISO VRMS 2,500 (AC 1 minute)

Screw Torque Terminals (M6) -

N·m 6.0 (1)

Mounting (M5) - 4.0 (2)

Notes: Recommended Value (1)5.5±0.5N·m (2)3.5±0.5N·m

3. ELECTRICAL CHARACTERISTICS

Item Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES mA - - 1.0 Vce=650V, Vge=0V, Tj=25

oC

Gate Emitter Leakage Current IGES nA - - ±500 Vge=20V, Vce=0V, Tj=25oC

Collector Emitter Saturation Voltage VCE(sat) V 1.3 1.65 2.1 Ic=600A, Vge=15V, Tj=25

oC

- 1.9 - Ic=600A, Vge=15V, Tj=150oC

Gate Emitter Threshold Voltage VGE(TO) V 6.0 6.7 7.5 Vce=5V, Ic=600mA, Tj=25oC

Input Capacitance Cies nF - 53 - Vce=10V, Vge=0V, f=100kHz, Tj=25oC

Switching Times

Rise Time tr

s

- 0.15 0.4 Vcc=300V, Ic=600A Ls=30nH , R(ext)=4.7Ω, Cge=56nF Vge=+15V/0V, Tj=150

oC

Inductive load

Turn On Time ton - 0.50 0.9

Fall Time tf - 0.35 0.8

Turn Off Time toff - 1.20 2.0

Peak Forward Voltage Drop VF V 1.1 1.45 1.8 If=600A, VGE=0V, Tj=25

oC

- 1.5 - If=600A, VGE=0V, Tj=150oC

Reverse Recovery Time trr s - 0.35 0.8 VCC=300V, Ic=600A, Ls=30nH, Rg(ext)=4.7Ω, Cge=56nF Vge=+15V/0V, Tj=150

oC

Inductive load

Turn On Loss Eon(full) mJ/P - 20 30

Turn Off Loss Eoff(full) mJ/P - 45 65

Reverse Recovery Loss Err(full) mJ/P - 15 23

Thermistor Resistance R kΩ - 5 - Tc=25

oC

- 0.16 - Tc=150 o

C

Leakage Current between Thermistor and Other Terminals

mA - - 0.1 V=600Vp

Thermal Resistance IGBT Rth(j-w) K /W - - 0.145 Junction to water/fin, 10l/min, 50%LLC

(per 1 arm) FWD Rth(j-w) K /W - - 0.21

* Please contact our representatives at order.

* For improvement, specifications are subject to change without notice.

* For actual application, please confirm this spec sheet is the newest revision.

DWN.

CHKD.

M. Inaba Sep.26, 2014

T. Kushima

APPD. Y. Nemoto

Sep.26, 2014

Sep.26, 2014

6in1 IGBT Module Spec.No.IGBT-SP-10011-R4 P2/8

MBB600TV6A

4. PACKAGE OUTLINE DRAWING

Weight : 900g

Unit in mm

6in1 IGBT Module Spec.No.IGBT-SP-10011-R4 (P3/8)

MBB600TV6A

5. CIRCUIT DIAGRAM

6. PRODUCT LABEL

7. DEFINITION OF THE SYMBOLS

Thermistor T1, T2 and T3 are located on the

same ceramic substrate with the IGBT and

diode chips of phase U, V and W, respectively.

Note: This temperature measurement is not suitable for the short circuit or short term over-load detection and should be used only for the module protection against long term overload or malfunction of the cooling system.

6in1 IGBT Module Spec.No.IGBT-SP-10011-R4 (P4/8)

MBB600TV6A

8. STATIC CHARACTERISTICS

Collector to Emitter Voltage vs. Gate to Emitter Voltage Collector to Emitter Voltage vs. Gate to Emitter Voltage

Collector Current vs. Collector to Emitter Voltage Collector Current vs. Collector to Emitter Voltage

コレ

クタ

電流

IC(A)

Collector to Emitter Voltage

コレクタ・エミッタ間電圧 VCE(V)　

　　

　　

　　

　C

olle

cto

r C

urr

ent

TYPICAL

9V

10V

11V

VGE=15V14V13V12V

0

200

400

600

800

1000

1200

0 2 4 6 8 10

Tc=150℃

8V

Voltage sence:CS＊-E＊（＊：1～6）

0

2

4

6

8

10

12

0 5 10 15 20

コレ

クタ

・エ

ミッ

タ間

電圧

VCE(V)

Gate to Emitter Voltage

ゲート・エミッタ間電圧 VGE(V)

　　

　　

　C

olle

cto

r to

Em

itte

r V

oltage

TYPICAL

Tc=150℃

Ic=1200A

Ic=600A

Voltage sence:CS＊-E＊（＊：1～6）

コレ

クタ

電流

IC(A)

Collector to Emitter Voltage

コレクタ・エミッタ間電圧 VCE(V)

　　

　　

　　

　　

Colle

cto

r C

urr

ent

TYPICAL

10V

VGE=15V14V13V12V11V

0

200

400

600

800

1000

1200

0 2 4 6 8 10

Tc=25℃

8V

9V

Voltage sence:CS＊-E＊（＊：1～6）

0

2

4

6

8

10

12

0 5 10 15 20

コレクタ・エミッタ間電圧

VCE(V)

Gate to Emitter Voltage

ゲート・エミッタ間電圧 VGE(V)

　　　　　

Co

llecto

r to

Em

itte

r V

olta

ge

TYPICAL

Tc=25℃

Ic=1200A

Ic=600A

Voltage sence:CS＊-E＊（＊：1～6）

6in1 IGBT Module Spec.No.IGBT-SP-10011-R4 (P5/8)

MBB600TV6A

9. DYNAMIC CHARACTERISTICS

TYPICAL

Sw

itch

ing

Tim

e

コレクタ電流 IC(A)

Collector Current

スイッチング時間

t (μ

S)

0

0.5

1

1.5

2

2.5

0 100 200 300 400 500 600 700

VCC=300VVGE=+15V/0V

Rgon/RGoff=4.7Ω

Cge=56nF

Tc=150℃

Ls≒30nH

Inductive Load

toff

tf

tr

ton

trr

Gate Charge Characteristics Forward Voltage of Free-Wheeling Diode

ゲート・エミッタ間電圧　VGE(V)

ゲート電荷 QG(nC)

Gate Charge

Ga

te t

o E

mitte

r V

olta

ge

TYPICAL

0

5

10

15

20

Vcc=300V

Ic=600A

Tc=25℃

0 20001000

Switching Time vs. Collector Current Switching Time vs. Gate Resistance

Fo

rwa

rd C

urr

en

t

順電圧 VF(V)

Forward Voltage順電流 IF(A)

TYPICAL

0

200

400

600

800

1000

1200

0 1 2 3 4 5

VGE=0

Tc=25℃Tc=150℃

Voltage sence:CS＊-E＊（＊：1～6）

6in1 IGBT Module Spec.No.IGBT-SP-10011-R4 (P6/8)

MBB600TV6A

0

20

40

60

80

100

120

0 5 10 15 20

Sw

itch

ing

Lo

ss

ゲート抵抗 RG(Ω)

Gate Resistance

スイ

ッチン

グ損失

Eon,Eoff,Err(mJ/pulse)

TYPICAL

VCC＝300VVGE＝+15/0VIC＝600A

Cge=56nF

Tc＝150℃

Ls≒30nH

Inductive Load

Eoff

Eon

Err

Voltage sense；

CS* - E* (*：1～6)

0.001

0.01

0.1

1

0.001 0.01 0.1 1 10

Tra

nsie

nt T

he

rmal I

mp

ed

ance

時間 t(s)

Time

過渡熱抵抗

Rth(j-c)(K/W)

Diode

IGBT

10l/min(LLC50%)

Reverse Bias Safe Operation Area (RBSOA)

Switching Loss vs. Collector Current Switching Loss vs. Gate Resistance

Transient Thermal Impedance Characteristics

Co

lle

cto

r C

urr

en

t

コレクタ・エミッタ間電圧 VCE(V)

Collector to Emitter Voltage

コレクタ電流 IC(A)

1

10

100

1000

10000

0 100 200 300 400 500 600 700 800

VGE＝+15V/0V

Tc≦150℃

Voltage sence:CS＊-E＊（＊：1～6）

6in1 IGBT Module Spec.No.IGBT-SP-10011-R4 (P7/8)

MBB600TV6A

0

200

400

600

800

1000

1200

1400

1600

0 100 200 300 400 500 600 700 800

Co

llecto

r C

urr

en

t (F

orw

ard

Cu

rre

nt)

コレクタ・エミッタ間電圧 VCE(V)

Collector to Emitter Voltage

コレ

クタ

電流

-IC(=IF) (A)

VGE=+15/0VTc≦150℃

Voltage sense:

CS* - E* (*:1～6)

10. THERMISTOR

Reverse Recovery Safe Operation Area (RRSOA)

Resistance vs. Temperature

0.1

1

10

020406080100120

抵抗

値(k

Ω)

温度 (℃)

For reference(Data from manufacturer)

Temperature

Resis

tance

Table1 Specifications of Thermistor(For reference)

Nominal zero-power resistance 5kΩ ±3％（25℃）

B value 3375K±2％（25～50℃）

Operating temperature range ‐50～150℃

Thermal time constant（in still air) Approx. 10 sec.

6in1 IGBT Module Spec.No.IGBT-SP-10011-R4 (P8/8)

MBB600TV6A

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