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SPICE MODEL of 2SC5823-TL-E in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC5823-TL-E
MANUFACTURER: SANYO
Device Modeling Report
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
2
TRANSISTOR MODEL
PSpice model parameter
Model description
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
3
Ic
Vce
VAR
(X1,Y1)
(X2,Y2)
Y=aX+b
Reverse Early Voltage Characteristic
Reverse
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
4
Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5
Ic
VceVAF
(X1,Y1)
(X2,Y2)
Y=aX+b
Forward Early Voltage Characteristic
Forward
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6
C-B Capacitance Characteristics E-B Capacitance Characteristics
Measurement
Simulation
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
7
V1
5VdcI1
0Adc
0
v sence
0Vdc
Q1Q2SC5823-TL-E
I(vsence)
1.0mA 10mA 100mA 1.0A 3.0A
I(vsence)/ IB(Q1)
1.0
10
100
300
Transistor hFE-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8
Comparison Graph
IC(A) hFE
Error(%) Measurement Simulation
0.001 21.500 21.077 -1.967
0.002 24.500 23.711 -3.220
0.005 29.000 27.575 -4.914
0.010 32.000 30.709 -4.034
0.020 35.000 33.847 -3.294
0.050 38.000 37.191 -2.129
0.100 39.000 37.837 -2.982
0.200 36.000 34.761 -3.442
0.500 21.500 22.301 3.726
1.000 9.955 10.429 4.761
1.500 5.995 5.699 -4.932
Circuit Simulation Result
Simulation Result
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9
VC
I1
0Adc
0
F1
F5
Q1Q2SC5823-TL-E
IC(Q1)
10mA 100mA 1.0A 10A
V(Q1:c)
1.0mV
10mV
100mV
1.0V
10V
VCE(Sat)-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10
Comparison Graph
IC(A) VCE(sat)(V)
Error(%) Measurement Simulation
0.01000 0.05200 0.05220 0.38269
0.02000 0.05000 0.04784 -4.32200
0.05000 0.05100 0.05075 -0.49216
0.10000 0.06300 0.06381 1.28889
0.20000 0.09000 0.09308 3.42333
0.50000 0.18000 0.18057 0.31500
1.00000 0.34500 0.32858 -4.75826
Circuit Simulation Result
Simulation Result
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11
VC
I1
0Adc
0
F1
F5
Q1Q2SC5823-TL-E
IC(Q1)
10mA 100mA 1.0A 3.0A
V(Q1:b)
100mV
1.0V
10V
VBE(Sat)-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12
Comparison Graph
IC(A) VBE(sat)(V)
Error(%) Measurement Simulation
0.01000 0.670 0.649 -3.203
0.02000 0.695 0.671 -3.383
0.05000 0.720 0.707 -1.762
0.10000 0.750 0.742 -1.057
0.20000 0.800 0.789 -1.386
0.50000 0.900 0.888 -1.385
1.00000 1.020 1.019 -0.118
1.50000 1.130 1.137 0.619
Circuit Simulation Result
Simulation Result
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13
V1TD = 8uTF = 100nsPW = 20usPER = 500us
V1 = 5
TR = 100ns
V2 = -5
R1
18.4
R2
12.7
0
VCC
200
D1
D1N5817D2
D1N5817
RL
200
L1
30nH
1 2
L2
30n
1 2 Q1Q2SC5823-TL-E
Time
0s 2us 4us 6us 8us 10us 12us 14us 16us 18us
1 V(L2:2) 2 V(Q1:c)
0V
10V
-5V
1
0V
50V
100V
150V
200V
250V
300V2
>>
Switching Characteristics Circuit simulation result
Evaluation circuit
Simulation result
Measurement Simulation %Error
tf (us) 0.2500 0.2495 -0.1836
tstg (us) 2.5000 2.5006 0.0240
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14
V1
10Vdc
0
I1
0Adc
Q1Q2SC5823-TL-E
V_V1
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
IC(Q1)
0A
0.2A
0.4A
0.6A
0.8A
1.0A
1.2A
1.4A
1.6A
1.8A
2.0A
Output Characteristics
Circuit Simulation Result
Evaluation Circuit
IB=0A
10mA
100mA
150mA
200mA
20mA
50mA
250mA
300mA
350mA
400mA 450mA
500mA
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
15
Output Characteristics Reference