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5 AVAGO WSD Infrastructure_2012-10
Citation preview
WSD Wireless Semiconductor Division
1 Avago Confidential
Connecting You to the Digital World
Jimmy Ang
Product Marketing Manager
RF Multi-Market Components
Wireless Semiconductor Division
WSD Wireless Semiconductor Division
2 Avago Confidential
Avago WSD Worldwide
Headquarters
San Jose
Research and Development
San Jose, Seoul, Penang, Munich
Wafer Fabrication
Avago Ft. Collins, CO; 6” wafer fab
GaAs PHEMT, E-pHEMT
FBAR
Silicon Bipolar and Diodes
Foundry (Win Semi and Triquint )
GaAs HBT PA
Assembly and Test
Assembly: Foxconn in China, ASE Korea, Inari in Malaysia, others
Test: Foxconn, Inari, ASE, others
Bay Area, California
Penang, MalaysiaFt. Collins, ColoradoR&DMarketingManufacturing
Wafer Fab
HeadquartersR&DMarketing
Seoul
R&DMarketing
R&D
Munich
WSD Wireless Semiconductor Division
3 Avago Confidential
Power AmplifierHigh Efficiency
Helping Customers With Differentiated Technologies
FilterMiniature
GPS FEMintegration
LNA / Driver AmpLow Noise /High linearity
UMTS / LTE
GSM
GPS / WLAN / Mobile WiMAX / Digital TV
WLAN / Mobile WiMAX
GSM Quad-Band Power Amplifier
Duel Band Low Noise Amplifier for
WLAN 802.11a/b/g notebook computersCDMA PCS-band power module
with lid removed
integrated
matching
& bias
FBAR
Cellular / WiMAX Infrastructure
mmWave MMICLow cost
VSAT
P2P / P2MP
GPS / WiFi / WiMAX
CELL / PCS
mmWave Power Amplifier
GaAs
PHEMTDepletion-mode
Enhancement-mode
Cellular / WiMAX Infrastructure
WSD Wireless Semiconductor Division
4 Avago Confidential
Leading Low Cost & High Volume Silicon Fab
SiliconDiode,
Transistor
& RFIC
Silicon Bipolar fT 25GHzGain Blocks
Silicon Bipolar fT 10GHzTransistors & Gain Blocks
Silicon PIN DiodesSwitch, Attenuator, Limiter
Silicon Schottky DiodesDetector, Mixer, Clipping/Clamping
•Base Station
•Satellite and Cable TV
•ETC, RF Tag
•Handset
•Base Station
•Military
•Satellite, Cable, Terrestrial TV
WSD Wireless Semiconductor Division
5 Avago Confidential
Note:
This presentation contains Pre-released product information: Avago Technologies reserves the right to alter specifications, features, functions, markings, manufacturing release dates and general availability of the product at any time.
RF Solutions for
Wireless InfrastructureLast updated: August 2010
WSD Wireless Semiconductor Division
6 Avago Confidential
WSD Technology for Wireless Infrastructure
Ultra Low NF LNA for Receiver Sensitivity
Improvement
Gain Block & Driver Amp with Great Linearity &
High Efficiency
Highly Integrated Multi-Chip & Fully Match Module
Solution
Application SimplicityMulti Function IntegrationLow External SMT’s Count
Board Space ReductionDesign Cycle Optimization
Ultra Low NFGreat Linearity
Enable Broader Coverage
High Linearity
Low Current
Industry Standard Package
Broad Performance Selection
E-pHEMTSi RFIC
InGaP HBTE-pHEMT
PCB-based modules
Multi Chip Lead Frame
Tech
no
log
yV
alu
e P
rop
osi
tio
n
WSD Wireless Semiconductor Division
7
1st stage Low Noise Amplifier ATF-3xx43/M4, ATF-5xx43/M4,MGA-63xP8, MGA-1x516 Best In Class Ultra Low NF
2nd stage LNA, Pre-Driver Amp & Gain Block ATF-5x1P8/89, MGA-30x16, MGA-3xx89 MGA-5xx43/89, MGA-8xx63 High Linearity, Low Current Consumption & Industrial Standard Package
Driver Amp & PA ALM-31x22/32x20 High Linearity & Fully Match
Integrated Solution ALM-1x22 – Dual Stage Low Noise, High Linearity & High Gain Balanced LNAALM-80x10 – 0.25W VGAMGA-1x516 – 2-Stage High Gain & Linearity LNAMixers IAM-9x516
Buffer Amp MGA-565P8 – High ISO With Adjustable Psat
Building Blocks Broad Package Selection
GaAs Infrastructure Product Portfolio
SC70
MiniPak QFN(Various Dimension)
SOT-89
MCOB (Molded Chip-on-Board; Various Dimension)
(1.4 x 1.2 x 0.7 mm)
(4.5 x 2.5 x 1.5 mm)(2 x 1.2 x 0.95 mm)
Avago Confidential
WSD Wireless Semiconductor Division
8
Ultra Low Noise LNA with E-pHEMT TechnologyOffer Superior Receiver Sensitivity
Idd (mA)
NF (dB)
0.5
- Ultra Low NF (<0.5dB) together with high linearity (>35dBm) - Enhanced receiver sensitivity performance for BTS application- Consistent performance in mass production- Achieved with Avago Proprietary 0.25um E-pHEMT Technology & Unique Design Capability
50
Avago Confidential
WSD Wireless Semiconductor Division
9
Avago Technologies BTS LNA Product Portfolio
Design Slots Part Numbers Key Value Proposition
1st Stage LNA ATF-3xx43/M4, ATF-5xx43/M4,
MGA-6x563,MGA-63xP8
Ultra Low NF, Good S11, High
Pin Max Rating, Great IP3 &
Low Current Consumption
2nd or 3rd Stage LNA ATF-5x1P8/89, MGA-535xx,
MGA-6x563,MGA-63xP8, MGA-
3xx89
High IP3, Good RL’s, Low NF,
High Gain & Low Current
Consumption
Balance and Dual
Stage LNAMGA-1x516, MGA-13x16 Semi Integrated Solution
Enable Design Simplification &
PCB Space Saving
Multi-Chip Module
SolutionALM-1x22, ALM-12x24, ALM-
11x36
Application Specific Design: BTS LNA Module (Balance & Dual Stage)
TD-SCDMA High Power Switch LNA Module
TMA Bypass LNA Module
Avago Confidential
WSD Wireless Semiconductor Division
10
Highly Integrated & Reliable Module Packaging
TechnologyOffer Highly Reliable & Integrated Module Solution
- Highly integrated multichip solution realized with Avago Technologies highly reliable Coreless Substrate technology & established module integration technique - Proven reliability performance & MSL1/MSL2aenable- Superior Thermal Resistance vs conventional laminated substrate - High volume manufacturing experience- Ready to offer dedicated application specific solution for customer upon request
Complex and space consuming
discrete solution
Avago miniature multichip module
solution
Avago Confidential
WSD Wireless Semiconductor Division
11
Wireless Infrastructure LNA Roadmap
1st GenerationSC70
0.9dB NF
1st Gen Dual Stage LNAQFN 4x4mm2
<0.7dB NF; 38dBm OIP3
Dis
cret
e F
ET
Act
ive
Bia
s L
NA
Mu
lti-
Ch
ip
Mo
du
le
1st Stage Balance LNAQFN 4x4mm2
<0.5dB NF
3rd GenerationQFN 2x2mm2
0.37dB NF @900MHz
4th GenerationQFN 2x2mm2
0.4dB NF; >20dB Gain @1900MHz
ATF-3xx43, 5xx43/M4
SC70Low NF LNA
20122010200720032000
ATF-5x1P8QFN 2x2mm2, High IP3 LNA
ATF-5x189SOT89,
High IP3 LNA
2nd GenerationQFN 2x2mm2
0.53dB NF @900MHz
3rd GenerationQFN 2x2mm2
>22dBm IIP3; Shutdown Pin
Dual Stage Balance LNA
5x6x1.1mm3
MCOBApplication
Specific LNA Module
MCOB
2nd Gen Dual Stage LNAQFN 4x4mm2
<0.6dB NF; 40dBm OIP3
Increasing Gain while maintaining NF; Application specific Module Solution for design simplification
Avago Confidential
WSD Wireless Semiconductor Division
12
Avago Technologies Gain Block Product PortfolioFull Coverage With A Variety Of Selection
Ga
in (d
B)
Linearity, OIP3 (dBm)
25dBm 30dBm 35dBm 40dBm
16dB
20dB
*ADA-4643
*ABA-53563
*AVT-50663
*ADA-4743/89
*ABA-54563
*AVT-51663
*AVT-52663
*AVT-53663
*AVT-54689 *AVT-55689
*MGA-30889
18dB
22dB
* MGA-31389MGA-31489
* MGA-31189MGA-31289
*MGA-53589
45dBm
* MGA-31589MGA-31689
*MGA-30x16
SXA-389 EquivalentSBB-5089 Equivalent AH125 Equivalent
*MGA-30689
*MGA-30489
AH1 Equivalent
Avago Confidential
WSD Wireless Semiconductor Division
13
Wireless Infrastructure Gain Block Roadmap
AVT-5x663SC70 (6 Leads)
Broad Band, <30dBm OIP3
0.5W PAQFN 4x4mm2
>27dBm P1dB, >44dBm
OIP3
Si G
BIn
GaP
HB
T G
BE
-pH
EM
T G
B
ABA-3x563, 5x563SC70 (6 Leads)25GHz Ft HP25,
20dB Gain
20112009<2005
ADA-4x43SC70 (4 Leads)25GHz Ft HP25, Darlington GB
Increasing Gain while maintaining NF; Application specific Module Solution for design simplification
2010
AVT-5x663SOT-89
Broad Band, <35dBm OIP3
MGA-3xx89 0.1W & 0.25W PA
SOT-89
Broad Band, High Linearit, High Gain & Good Gain Flatness
MGA-31589/31689 0.5W PA
SOT-89
20dB Gain, >44.5dBm OIP3, 0.1dB Flatness,
<170mA.
High LFOM GB Family
QFN or SOT-89
>17dB LFOM
Avago Confidential
WSD Wireless Semiconductor Division
14
20 27
-53
-49
-45
AC
LR
1 / d
Bc
Linear Pout / dBm
•(869-960)MHz
•UMTS
•(1800-2000)MHz
•UMTS
•(2000-2200)MHz
•UMTS/TD-SCDMA
•(2500-2700)MHz
•Wimax/LTE
•(3500-3800)MHz
•Wimax/LTE
• Enterprise FemtoCell
• PicoCell
• CPE
• P1dB ~ 36dBm
• Gain : 35dB
• P1dB >30dBm
• OIP3 >47dBm
•Single Stage Gain
•(698-787)MHz
•LTE
MGA-43228/43328
MGA-43128
ALM-31122
•(2300-2500)MHz
•UMTS/TD LTE
Avago Technologies BTS PA Product Portfolio1-4W High Linearity PA
ALM-31222
ALM-31322
ALM-32120
ALM-32220
ALM-32320
• P1dB >33dBm
• OIP3 >50dBm
•Single Stage Gain
Avago Confidential
WSD Wireless Semiconductor Division
15
Wireless Infrastructure High Power PA RoadmapHigh Power & High Efficiency Fully Match PA Module For Major Cellular Freq Bands
MGA-43x285x5mm2 QFN29dBm LTE &
WiMAX PA
Dri
ver
Am
p
ALM-31x225x6x1.1mm3 MCOB
High Linearity 1W PA
201220102008
27dBm Linear PA (Band 1,2,5,8)5x5mm2 MCOB
18% Efficiency, 48dBc ACLR
ALM-32x207x10x1.1mm3 MCOB
High Linearity 2W PA
4W Class A PATBD
High Linearity 4W PA
Hig
h G
ain
H
igh
Po
wer
P
A M
od
ule
8-10W Driver Amp (Major Cellular Band)
TBD
High Gain, High
Efficiency, >53dBc ACLR
Avago Confidential
WSD Wireless Semiconductor Division
16
Released Products
WSD Wireless Semiconductor Division
17 Avago Confidential
MGA-631P8 & MGA-632P8 Active Bias LNA
Bottom View
Gro
und8
7
6
5
1
2
3
4
LPCC 2.0 x 2.0 x 0.75 mm
32.617.50.5354@ 4V0.4 - 1.5MGA-631P8
(dBm)(mA)(GHz)
OIP3CurrentFreq rangeProduct S11
(dB)
19.4
S22
(dB)
22.50.9
33.917.60.6257@ 4V1.4 – 3.8MGA-632P8 22.7 13.91.95
P1dB
(dBm)
18.0
19.2
NF
(dB)
Gain
(dB)(GHz)
Test range
Low Noise Amplifier
Pin1
Value Propositions
• Very Low NF
• 25dB typ. Input Return Loss, C1, L1 optimise match and NF
• Ideal for single ended designs
• Adjustable voltage supply 3V to 5V
• Adjustable current with Rbias 20-80mA
• 20dBm input power handling
•Gain control via feedback R1 and C3 values, 2-4dB gain
adjustment
•Cascode amplifier design, same die mounted vertically or
horizontally on ground pad
Target Applications:
• Low Noise Amplifier for cellular base stations (GSM, CDMA,
WCDMA, TD-SCDMA, CDMA2000, LTE, WiMAX, etc)
WSD Wireless Semiconductor Division
18
Bottom View
Gro
und
8
7
6
5
1
2
3
4
MoSLP 2.0 x 2.0 x 0.75 mm
37.018.00.3754 @ 5V0.4-1.5MGA-633P8
(dBm)(mA)(GHz)
OIP3CurrentFreq rangeProduct S11
(dB)
15.0
S22
(dB)
21.00.9
P1dB
(dBm)
22
NF
(dB)
Gain
(dB)(GHz)
Test range
Simplified Schematic
36.017.40.4448 @ 5V1.5-2.3MGA-634P8 15.5 13.01.9 21
35.918.00.5656 @ 5V2.3-4.0MGA-635P8 12.5 12.02.5 22
Avago Confidential
MGA-633P8, MGA-634P8 & MGA-635P8 Active Bias Ultra Low Noise Amplifier
Low Noise Amplifier
Value Propositions
• Ultra low noise figure
• High Linearity
• Broadband 0.4 – 4.0GHz
• Built-in active bias circuit
• Smart bias: Adjustable current and Linearity
• MGA-633P8 41dBm IP3 @ 70mA
• MGA-634P8 39dBm IP3 @ 56mA
• MGA-635P8 36dBm IP3 @56mA
• 20dBm Input power handling
• 15dB typ. Input Return Loss, C1, L1 optimise match and NF
Target Applications:
• Low Noise Amplifier for cellular base stations (GSM, CDMA,
WCDMA, TD-SCDMA, CDMA2000, LTE and WiMAX, etc.)
WSD Wireless Semiconductor Division
19 Avago Confidential
Part No. Freq range (MHz)
Test Freq (MHz)
Vd (V) Id (mA)
NF (dB)
Gain (dB)
OIP3 (dBm)
IRL (dB)
ORL (dB)
OP1dB (dBm)
S12 (dB)
Pkg
MGA-13516 400-1500 900 5 155 0.66 31.8 38 13 15 23.5 50 QFN 4x4mm
MGA-14516 1400-2700 1950 5 155 0.68 31.7 38 13 15 23.5 50 QFN 4x4mm
MGA-13516 & MGA-14516 2 stage High Gain & High Linearity LNA
RFin
RFout
Vd
match
Vbias
Active
bias
Active
bias
4x4x0.85mm 16 lead QFN
Value Propositions
• First and Second stage LNA in 4x4mm package
• <0.7dB NF
• Ideal for single ended designs
• First stage adjustable voltage supply 3V to 5V
• First and second stage adjustable current
• 20dBm input power handling
• First and Second stage Gain control via feedback
• Available connection for attenuator, filter or simple match
between stages for flexibility
Target Applications:
• Low Noise Amplifier for cellular base stations (GSM,
CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE, WiMAX,
etc)
Low Noise Amplifier
WSD Wireless Semiconductor Division
20
MGA-16516 and MGA-17516 Dual Matched Low Noise FET
Key Value Propositions
• Low NF
• High Linearity
• Dual, matched pair LNA
• Excellent isolation
• For use as balanced amplifier design
• External active bias circuit required
Target Applications:
• Low Noise Amplifier for cellular base stations (GSM,
CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE,
WiMAX, etc)
QFN 4.0 x 4.0 x 0.85 mm
Freq. Range Test Freq. Vdd Idq NF Gain OP1dB IIP3
Part Number (GHz) (GHz) (V) (mA) (dB) (dB) (dBm) (dBm) Package
MGA-16516 0.5-1.7 0.8 5 50 0.45 17.5 18 12.4 QFN 4x4x0.85mm
MAG-17516 1.7-2.7 1.85 5 50 0.52 17.2 21.5 16.2 QFN 4x4x0.85mm
Low Noise Amplifier
WSD Wireless Semiconductor Division
21
ATF-531P8, ATF-55143/M4, ATF-54143/M4 First Stage Low Noise
Amplifiers & and ATF-58143 High Linearity Low Noise
Enhancement Mode pHEMT FET
Part
Gate
Width
Application
Note Freq. V ds I ds NF G a OIP3 P 1 dB Package
Application
Note
Number (um) (MHz) (V) (mA) (dB) (dB) (dBm) (dBm)
ATF-531P8 1600 900 4 40 0.6 18.6 31 15 LPCC AN-1371
ATF-54143 800 2000 3 60 0.5 16.6 36.2 20 SOT-343 AN-1281
ATF-541M4 800 2000 3 60 0.5 17.5 35.8 21 MiniPak AN-1350
ATF-58143 800 900 3 30 0.55 20.6 33 15 SOT-343 AN-1375
ATF-55143 400 2000 2.7 10 0.6 17.7 24.2 14 SOT-343
ATF-551M4 400 2000 2.7 10 0.5 17.5 24.1 15 MiniPak
Key Value Propositions
•0.5 / 0.6dB Typical Noise Figure
•High Linearity
•Positive voltage only
•No bias timing Circuit required
•Application Notes and Evaluation boards to cover all
popular frequencies
•80% market share in cellular infrastructure
•Active bias circuit required for high volume applications
•SOT-343 and MiniPak package options
Q1,
ATF-541M4 C4
LL1
Z0Z0
C1
R1
C3R5
LL2
R3
R4
Vdd= 5V
L1L2
C2
C5
R2
C6
Low Noise Amplifier
WSD Wireless Semiconductor Division
22
ATF-33143/M4, ATF-35143, ATF-34143 First Stage Low
Noise Amplifiers and Low Noise Depletion Mode pHEMT
FET ATF-38143
Part
Gate
Width
Application
Note Freq. V ds I ds NF G a OIP3 P 1 dB Package
Application
Note
Number (um) (MHz) (V) (mA) (dB) (dB) (dBm) (dBm)
ATF-33143 1600 900 4 80 0.5 17.4 33 20 SOT-343 AN-1195
ATF-33143 1600 1900 4 80 0.7 13.8 32.5 20 SOT-343 AN-1198
ATF-331M4 1600 1900 4 60 0.8 13.3 32 19 MiniPak AN-1288
ATF-34143 800 900 4 40 0.4 18.5 29 17.5 SOT-343 AN-1190
ATF-34143 800 1900 4 60 0.5 16 31 19 SOT-343 AN-1175
ATF-38143 800 1900 2 10 0.7 15.5 23 12 SOT-343 AN-1197
ATF-35143 400 1600/1900 2 10 0.9 15 20 11 SOT-343 AN-1174
Key Value Propositions
•0.5 / 0.6dB Typical Noise Figure
•High Linearity
•Application Notes and Evaluation boards to cover all
popular frequencies
•80% market share in cellular infrastructure
•Active bias circuit required for high volume
applications
•SOT-343 and MiniPak package options
Low Noise Amplifier
WSD Wireless Semiconductor Division
23Page 23
Second and Third Stage ATF-5X1P8/89
Enhancement Mode FET Series
Part
Gate
Width
Application
Note Freq. V ds I ds NF G a OIP3 P 1 dB Package
Application
Note
Number (um) (MHz) (V) (mA) (dB) (dB) (dBm) (dBm)
ATF-50189 6400 1960 4.5 320 13.8 44.5 27 SOT-89 AN-5049
ATF-501P8 6400 1960 4.3 280 1.7 13.4 45.2 28.5 LPCC AN-5021
ATF-501P8 6400 900 4.3 280 1.9 17.4 44.5 27.4 LPCC AN-5025
ATF-501P8 6400 450 4.3 280 1.6 22.9 41.5 25 LPCC AN-5058
ATF-511P8 6400 1960 4.5 200 2.0 13.8 41.3 26 LPCC AN-1327
ATF-511P8 6400 900 4.5 200 3.1 18.4 41.2 25 LPCC AN-1373
ATF-521P8 3200 2140 4.5 200 1.6 16.5 41.2 24.8 LPCC Datasheet
ATF-521P8 3200 900 4.5 200 3.5 18.3 40 24.4 LPCC AN-1374
ATF-52189 3200 2000 4.7 225 1.6 16.9 40 27.5 SOT-89 AN-5245
ATF-531P8 1600 1960 4 135 1.2 18.6 35 24.3 LPCC AN-1320
ATF-531P8 1600 1960 4 135 3.0 14.8 40 22.3 LPCC AN-1320
ATF-531P8 1600 900 4 135 3.0 22.3 38 20.7 LPCC AN-1372
Key Value Propositions
•High Linearity
•Positive voltage only
•No bias timing Circuit required
•Application Notes, White Papers and Evaluation boards to
cover all popular frequencies
•Active bias circuit required for high volume applications
•SOT-89 and LPCC 2x2mm package options
OGXOGXOGX
Low Noise Amplifier
WSD Wireless Semiconductor Division
24 Avago Confidential
MGA-53543 & MGA-53589High Linearity LNA/Driver Amp
High Linearity LNA / Driver Amp
Key Value Propositions
• 1.5dB Noise Figure as Q2 LNA
• High linearity up to 39 dBm OIP3 at 5V, 54mA bias SOT-343
• High linearity up to 37 dBm OIP3 at 5V, 52mA bias SOT-89
• High power efficiency 28% at P1dB
• High reliability for base station application
• Suitable for 0.1 – 3.0GHz application
• Simple input match to optimize IP3
•SOT-343 and SOT-89 Industrial Standard Pb-free & MSL1
packages
SOT-89
52 Deg C / Watt
SOT-343163 Deg C / Watt
Simplified Circuit Schematic
Description Freq (MHz) NF (dB) Gain (dB)
OIP3
(dBm)
P1dB
(dBm) I/O RL Voltage (V)
Current
(mA)
Operating Range
(MHz)
MGA-53543900 1.3 17.4 39.7 19.3 >10.0 5.00 54 50-3000
1900 1.5 15.4 39.1 18.6 >10.0 5.00 54 50-3000
2400 1.9 15.1 38.7 18.1 >10.0 5.00 54 50-3000
MGA-53589900 1.24 18.2 36.8 18.6 >10.0 5.00 52 50-3000
1900 1.66 15.5 37.0 18.2 >10.0 5.00 52 50-3000
2400 1.64 15.3 37.2 17.6 >10.0 5.00 52 50-3000
WSD Wireless Semiconductor Division
25 Avago Confidential
MGA-6x563High Linearity Low Noise Smart-Bias DriverAmp
bias
inputmatch
1, 2, 5
6
4
3
Vd
IdsRbias
Ibias
Id = Ids + Ibias
Vbiasfeedback
bias
inputmatch
1, 2, 5
6
4
3
Vd
IdsRbias
Ibias
Id = Ids + Ibias
Vbiasfeedback
Figure 1 SmartFET Schematic Diagram
SOT-363
2 x 1.2 x 0.95 mm
General Purpose Amplifier
Features
• Single +3V and +5V supply
• Bias 5mA to 80mA with Rbias value
• High linearity
• Low noise figure
• SOT-363 Miniature package
• Input match optimizes NF performance
• Input can be matched for broadband
performance, white papers available for
100-1000MHz, 400-2700MHz
• Shutdown via Rbias control
Description Freq (MHz) NF (dB) Gain (dB)
OIP3
(dBm)
P1dB
(dBm) I/O RL Voltage (V)
Current
(mA)
Operating Range
(MHz)
MGA-62563500 0.8 22.0 35.0 18.0 >10.0 3.00 60 50-3000
1000 0.9 20.0 33.5 17.6 >10.0 3.00 60 50-3000
2000 1.2 15.5 33.0 17.7 >10.0 3.00 60 50-3000
MGA-61563500 1.1 20.0 30.0 15.5 >10.0 3.00 41 50-3000
1000 0.9 19.3 30.0 15.5 >10.0 3.00 41 50-3000
2000 1.0 15.5 32.0 15.1 >10.0 3.00 41 50-3000
WSD Wireless Semiconductor Division
26
MGA-81563 and MGA-82563 General Purpose Amplifiers
Key Value Propositions
• Easy to use with minimal external matching
• Input pre-matched, Output 50 Ohm matched
• Single +ve supply voltage
• Integrated active bias circuitry
• Unconditionally stable
• MGA-81563 can be biased 2V to 5V
• MGA-82563 can be biased at 2V, 4V absolute maximum
• MGA-81563 achieves similar P-1dB performance to MGA-
82563 when biased at 5V, 54mA
SOT-363
2 x 1.2 x 0.95 mm
MGA-81563 / 82563 Simplified Circuit Schematic
General Purpose Amplifiers
Description Freq (MHz) NF (dB) Gain (dB)
OIP3
(dBm)
P1dB
(dBm) I/O RL Voltage (V)
Current
(mA)
Operating Range
(MHz)
MGA-81563500 3.1 12.5 15.1 >10.0 3.00 42 50-6000
1000 3.0 12.5 15.1 >10.0 3.00 42 50-6000
2000 2.7 12.3 27 14.8 >10.0 3.00 42 50-6000
MGA-82563500 2.3 14.7 3 17.4 >10.0 3.00 84 50-3000
1000 2.2 14.5 17.5 >10.0 3.00 84 50-3000
2000 2.2 14.5 30 17.3 >10.0 3.00 84 50-3000
WSD Wireless Semiconductor Division
27 Avago Confidential
MGA-8x563General Purpose Amplifiers
SOT-363
2 x 1.2 x 0.95 mm
(dBm)(dBm)(dB)(dB)(mA)(V)(GHz)Part Number
OIP3P1dBGainNFIdqVddFreq. Range
(GHz)
Test Freq.
+15.0+4.120.01.81450.1 – 6.0MGA-86563
+11.5+0.919.01.851530.8 – 6.0MGA-85563
2
2
+8.0-2.014.01.84.530.1 – 6.0MGA-87563 2
MGA-85563 Simplified Circuit Schematic
MGA-86563 / 87563 Simplified Circuit Schematic
General Purpose Amplifier
Key Value Propositions
• Easy to use with minimal external matching
• Input pre-matched, Output 50 Ohm matched
• Single +ve supply voltage
• Integrated active bias circuitry
• Unconditionally stabel
WSD Wireless Semiconductor Division
28 Avago Confidential
Value Propositions
250MHz to 3GHz operating freq
Industry’s standard SOT-89 package
Very high linearity, Low current
Pre-matched with simple matching
Stable performance across temperature
Freq
(GHz)
Vd
(V)
Idq
(mA)
P1dB
(dBm)
OIP3
(dBm)
Gain@
(dB)
S11
(dB)
S22
(dB)
NF
(dB)
0.9 5 100 23.5 40.5 16.5 -11.0 -12.0 3.0
1.9 5 100 23.3 39.7 13.0 -14.5 -14.5 3.2
2.5 5 100 23.0 39.7 12.0 -18.0 -12.0 3.5
MGA-304890.25W Driver Amplifier (250MHz to 3GHz)
Simplified Schematic
SOT-89
High Linearity Gain Block
WSD Wireless Semiconductor Division
29 Avago Confidential
Value Propositions
Industry’s standard SOT-89 pkg
Very high and flat linearity across frequency
Flat gain across the frequency
Built in adjustable bias circuit
50Ohm matched input and output
Stable performance across temperature
MGA-30689, MGA-30789, MGA-30889 & MGA-30989Broadband High Linearity Gain Blocks
Simplified Schematic
Part number FreqRange (GHz)
Test Freq (GHz)
Vd (V)
Idq (mA)
P1dB (dBm)
OIP3
(dBm)
Gain
(dB)
Gain Variation
(dB)
S11
(dB)
S22 (dB)
NF (dB)
Package (mm)
MGA-30689 0.04 - 2.5 2.0 5 100 22 40 14.0 0.5 -10 -10 3.0 SOT-89
MGA-30789 2.0 - 6.0 3.5 5 100 24 40 12.0 NA -10 -10 3.5 SOT-89
MGA-30889 0.04 - 2.5 2.0 5 65 19 36 15.0 0.5 -10 -10 3.0 SOT-89
MGA-30989 2.0 - 6.0 3.5 5 56 22 36 12.4 NA -20 -15 2.0 SOT-89
SOT-89
High Linearity Gain Block
WSD Wireless Semiconductor Division
30 Avago Confidential
MGA-31189 & MGA-31289High Gain 0.25W Driver Amplifier
Value Propositions
250MHz to 2.7GHz operating freq
Industry’s standard SOT-89 package
Very high linearity
High gain
0.1dB Flatness over 100MHz
Pre-matched with simple matching
Stable performance across temperature
Target Applications:
Q2/3 LNA or Pre-driver Amplifier for cellular base
stations (GSM, CDMA, WCDMA, TD-SCDMA,
CDMA2000, LTE and WiMAX, etc)
Part number Freq Range (GHz)
Test Freq (GHz)
Vd (V)
Idq (mA)
P1dB (dBm)
OIP3
(dBm)
Gain
(dB)
S11
(dB)
S22 (dB)
NF (dB)
Package
MGA-31189 0.25 – 1.5 0.9 5 111 24.0 42.0 21.0 15.6 12.8 2.0 SOT-89
MGA-31289 1.5 – 3.0
1.9 5 124 23.6 41.8 18.7 16.2 10.3 2.0 SOT-89
2.5 5 124 23.7 41.5 17.7 15.5 10.8 2.0 SOT-89
Simplified Schematic
SOT-89
High Linearity Gain Block
WSD Wireless Semiconductor Division
31 Avago Confidential
Value Propositions
250MHz to 2.7GHz operating freq
Industry’s standard SOT-89 package
High and consistent gain across major freq band
0.1dB Flatness over 100MHz
High linearity
Pre-matched with simple matching
Stable performance across temperature
Target Applications:
Pre-driver Amplifier for cellular base stations (GSM,
CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE and
WiMAX, etc)
Part number Freq Range (GHz)
Test Freq (GHz)
Vd (V)
Idq (mA)
P1dB (dBm)
OIP3
(dBm)
Gain
(dB)
S11
(dB)
S22 (dB)
NF (dB)
Package
MGA-31389 0.25 – 1.5 0.9 5 73 22.2 38.6 21.3 30.5 14.7 2.0 SOT-89
MGA-31489 1.5 – 3.0
1.9 5 71 19.3 37.2 19.3 25.0 10.0 2.1 SOT-89
2.5 5 71 19.5 37.0 19.5 15.0 14.0 2.1 SOT-89
Simplified Schematic
High Linearity Gain Block
SOT-89
MGA-31389 & MGA-31489High Gain 0.1W Driver Amplifier
WSD Wireless Semiconductor Division
32 Avago Confidential
MGA-31589 & MGA-31689High Gain 0.5W Driver Amplifier
Value Propositions
450MHz to 3.0GHz operating freq (**narrow band
matching required)
Industry’s standard SOT-89 package
Very high linearity
High gain
0.1dB Flatness over 100MHz
Stable performance across temperature
Target Applications:
Q2/3 LNA or Pre-driver Amplifier for cellular base
stations (GSM, CDMA, WCDMA, TD-SCDMA,
CDMA2000, LTE and WiMAX, etc)
Part number Freq Range (GHz)
Test Freq (GHz)
Vd (V) Idq (mA) P1dB (dBm)
OIP3
(dBm)
Gain
(dB)
S11
(dB)
S22 (dB)
NF (dB)
Package
MGA-31589 0.45 – 1.5 0.7 5 146 27.2 45.3 20.4 12.1 10.0 1.9 SOT-89
MGA-31689 1.5 – 3.0 1.9 5 168 27.6 44.9 18.1 11.5 10.0 1.9 SOT-89
1900MHz Matching Circuitry
High Linearity Gain Block
WSD Wireless Semiconductor Division
33 Avago Confidential
Key value propositions
• High linearity (24-29dBm) and great power handling (13-
16dBm)
• Flat, broadband frequency response up to 2GHz
• High & Low gain option
• Internal 50 ohm match
•High ESD Protection (HBM>1KV)
• Low current consumption
• Industrial Standard MSL 1 package
Target Applications:
• IF Amplifier for Basestation radiocards
• Gain Block for various wireless system
SOT-363
2 x 1.2 x 0.95 mm
InGaP HBT Gain Block Amplifier-SC 70 Package
Description Freq (MHz) NF (dB) Gain (dB)
OIP3
(dBm)
P1dB
(dBm) I/O RL
Voltage
(V)
Current
(mA)
Operating Range
(MHz)
AVT-53663
100 3.50 22.4 29.8 16.0 >15.0 4.0 48 DC-6000
1000 3.50 21.5 29.3 16.2 >15.0 4.0 48 DC-6000
2000 3.50 20.0 27.0 14.6 >15.0 4.0 48 DC-6000
AVT-52663
100 3.70 16.2 30.4 15.8 >15.0 4.0 45 DC-6000
1000 3.80 16.0 29.5 15.7 >15.0 4.0 45 DC-6000
2000 4.30 15.6 27.4 15.1 >15.0 4.0 45 DC-6000
AVT-51663
100 3.50 21.3 26.3 13.5 >15.0 4.0 39 DC-6000
1000 3.50 20.8 27.0 14.0 >15.0 4.0 39 DC-6000
2000 3.50 19.5 25.3 12.3 >15.0 4.0 39 DC-6000
AVT-50663
100 3.40 16.0 27.0 13.3 >15.0 4.0 36 DC-6000
1000 3.50 15.7 26.5 13.1 >15.0 4.0 36 DC-6000
2000 3.80 15.5 25.3 12.8 >15.0 4.0 36 DC-6000
General Purpose Amplifier
WSD Wireless Semiconductor Division
34 Avago Confidential
AVT-55689 & AVT-54689InGaP HBT Gain Block Amplifier In SOT-89
Key value propositions
• High linearity (30-35dBm) and great power handling (17-
19dBm)
• Flat, broadband frequency response up to 2GHz
• Internal 50 ohm match
• High ESD Protection (HBM>1KV)
• Built in active bias eliminating external biasing resistor
• Low current consumption
• SOT-89 MSL 1 package
Target Applications:
• IF Amplifier for Basestation radiocards
• Gain Block for various wireless system
SOT-89
4.5x2.5x1.5mm
Demoboard/Samples Availability: Now!!!
Description Freq (MHz) NF (dB) Gain (dB) OIP3 (dBm)
P1dB
(dBm) I/O RL Voltage (V)
Current
(mA)
Operating Range
(MHz)
AVT-55689
100 4.10 18.9 36.0 19.6 >10.0 5.00 83 50-6000
1000 4.10 18.4 34.5 19.6 >10.0 5.00 83 50-6000
2000 4.50 17.0 33.0 19.0 >10.0 5.00 83 50-6000
AVT-54689100 3.95 19.3 34.0 19.0 >10.0 5.00 64 50-6000
1000 4.00 18.7 32.6 19.0 >10.0 5.00 64 50-6000
2000 4.30 17.40 30.0 17.0 >10.0 5.00 64 50-6000
General Purpose Amplifier
WSD Wireless Semiconductor Division
35 Avago Confidential
ABA-3x563 & 5x563 Broadband Silicon RFIC Amplifiers
SOT-363
2 x 1.2 x 0.95 mm
Description ABA-51563 ABA-52563 ABA-53563 ABA-54563 ABA-31563 ABA-32563
Freq (MHz) 100 1000 2000 100 1000 2000 100 1000 2000 100 1000 2000 100 1000 2000 100 1000 2000
NF (dB) 3.2 3.4 3.6 2.5 2.8 3.3 2.8 3.1 3.3 3.5 4.2 4.2 3.5 3.8 4.0 2.6 3.1 3.3
Gain (dB) 20.5 21 21.5 21.8 21.8 21.5 22 22 22 23 23.5 23 21.5 21.5 21 21.5 21.5 19
OIP3 (dBm) 14 14 12 30 26 20 28 27 23 36 34 28 17 15 13 27 23 19
P1dB (dBm) 4 4 2 13 12 10 15 14 13 18 18 17 4 3 2 12 10 8
I/O RL >15.0 >15.0
Voltage (V) 5 5 5 5 3 3
Current (mA) 18 35 46 79 14 37
Operating
Range (MHz) DC-2500 DC-2500 DC-2500 DC-2500 DC-2500 DC-2500
Key Value Propositions
• DC-2.5GHz flat frequency response
• High Linearity below 500MHz
• 20-22dB high fixed gain
• Higher reverse isolation <40dB
• 50 ohm matched input and output
• Unconditionally stable
• Voltage Biased, 3V and 5V options
Target Applications:• IF Amplifier for Basestation radiocards
• IF Amplifier for DVB-S LNB
General Purpose Amplifier
WSD Wireless Semiconductor Division
36 Avago Confidential
ADA-4x43 Silicon Bipolar Darlington Amplifiers
Description ADA-4543 ADA-4643 ADA-4743 ADA-4789
Freq (MHz) 100 1000 2000 100 1000 2000 100 1000 2000 100 1000 2000
NF (dB) 3.6 3.7 4.1 3.9 4.0 4.3 4.1 4.2 4.2 4.1 4.2 4.4
Gain (dB) 15.7 15.1 14.0 17.5 17.0 14.0 16.6 16.5 15.5 16.9 16.5 16.2
OIP3 (dBm) 14.6 15.0 14.0 29.0 28.3 24.0 33.4 32.6 28.0 33.4 33.2 28.8
P1dB (dBm) 2.5 1.9 2.0 14.7 13.4 11.5 17.7 17.1 16.2 17.7 17.1 15.5
0/P RL (dB) >15 >15 >15 >15
Current (mA) 15 35 60 60
Operating
Range (MHz) DC-2500 DC-2500 DC-2500 DC-2500
Key value propositions
• High linearity (15-33dBm) @ 0.9GHz
• High linearity (15-36dBm) @ 0.1GHz
• Flat, broadband frequency response up to 1GHz
• Internal 50 ohm match
• Flexible current biased devices
Target Applications:
• IF Amplifier for Basestation radiocards
• IF Amplifier for DVB-S LNB
• CATV drop line amplifier
ADA-4743 ADA-4789
SOT-89
52 Deg C / Watt
SOT-343
163 Deg C / Watt
General Purpose Amplifier
WSD Wireless Semiconductor Division
37 Avago Confidential
MGA-565P8High Isolation Buffer Amplifier
Psat
MixerVCO ~ 0dBm
Key Value Propositions
• Adjustable Psat between +9dBm to 20dBm via
external Rbias
• Broadband 100MHz to 3GHz application as LO
Buffer Amp
• High gain up to 22dB
Buffer-High Power Amplifier
Operating at 2GHz, Pin=0dBm
>42 dB21 mA+7 dBm73180 Ohm
>42 dB25 mA+10 dBm103130 Ohm
>42 dB40 mA+13 dBm135150 Ohm
>42 dB55 mA+17 dBm17560 Ohm
IsolationIdsLO DriveMixer LevelVd (V)Rbias
LPCC 2x2mm
WSD Wireless Semiconductor Division
38 Avago Confidential
Value Propositions
Very high linearity
Built in adjustable bias circuit
Adjustable current from 100 to 200mA (OIP3 will change)
Pre-matched with easy matching
Stable performance across temperature
Part number FreqRange (GHz)
Test Freq (GHz)
Vd (V) Idq (mA)
P1dB (dBm)
PAE @ P1dB
OIP3 (dBm)
Gain@
(dB)
S11
(dB)
S22 (dB)
NF (dB)
Package (mm)
MGA-30116 0.7- 1.0 0.9 5 203 27.7 47% 44.1 17 -14 -14 2.7 QFN 3x3mm
MGA-30216 1.7-2.7 2.0 5 206 29.0 49% 45.3 14 -19 -22 2.8 QFN 3x3mm
MGA-30316 3.3-3.9 3.5 5 198 28.5 51% 44.4 12.8 -10 -8.5 2.7 QFN 3x3mm
Basestation 0.5W Driver Amplifiers
QFN 3.0 x 3.0 x 0.85 mm
Demo board Schematic
Driver Amplifier
WSD Wireless Semiconductor Division
39 Avago Confidential
Value Propositions
Very high linearity
Built in adjustable bias circuit
Fully matched for easy to use
Stable performance across temperature
Part number FreqRange (GHz)
Test Freq (GHz)
Vd (V) Idq (mA)
P1dB (dBm)
PAE @ P1dB
OIP3 (dBm)
Gain@
(dB)
S11 (dB) S22
(dB)
NF (dB)
Package (mm)
ALM-31122 0.7-1.0 0.9 5 394 31.6 52% 47.6 15.6 -14 -11 2 MCOB 5x6 mm
ALM-31222 1.7-2.7 2.0 5 410 31.5 52% 47.9 14.9 -10 -10 2.7 MCOB 5x6 mm
ALM-31322 3.3-3.9 3.5 5 413 31 51% 47.7 13.2 -10 -10 2.8 MCOB 5x6 mm
Basestation 1W Driver Amplifiers
MCOB 5x6x1.1mm
Demo board Schematic
Driver Amplifier
WSD Wireless Semiconductor Division
40 Avago Confidential
Value Propositions
Very high linearity
Built in adjustable bias circuit
Fully matched for easy to use
Stable performance across temperature
Part number FreqRange (GHz)
Test Freq (GHz)
Vd (V) Idq (mA)
P1dB (dBm)
PAE @ P1dB
OIP3 (dBm)
Gain
(dB)
S11 (dB) S22
(dB)
NF (dB)
Package (mm)
ALM-32120 0.7-1.0 0.9 5 800 34.4 50.3% 52 14.3 -26 -10 2.5 MCOB7x10
ALM-32220 1.7-2.7 2.0 5 800 34.4 47.5% 50 14.8 -9 -9 3.5 MCOB7x10
ALM-32320 3.3-3.9 3.5 5 810 34.5 46.6% 51 12.6 -9 -12 2.5 MCOB7x10
Basestation 2W Driver Amplifiers
Vdd
Vdd2
VcontrolVsense
Vsense2
Demo board Schematic
Demo board
Driver Amplifier
WSD Wireless Semiconductor Division
41 Avago Confidential
Value Propositions
Low operating voltage (3.3V or 5V)
Low current, high efficiency
Integrated switch control attenuator
Integrated shutdown and power detector
Fully matched RF Input and output
WiMAX Linear Power Amplifier
Note 1: Linear Output power measured at 64QAM OFDMA modulation per IEEE 802.16e specs
Part number ALM-42216 ALM-42316Freq range (GHz) 2.3-2.7 3.3-3.8Test freq (GHz) 2.5 3.5Vdd (V) 3.3 3.3Idd (mA) 420 417Idq (mA) 240 240Pout (dBm) 23.5 23Pout (dBm) @ 5V 26 25EVM (%) 2.5% 2.5%PAE (%) 16% 16%Gain (dB) 32 302nd Harmonic (dBc) 45 45Atte. (dB) 18 18Package (mm) 5x5x1.1 5x5x1.1P1dB (dBm) 30.5 30.5Matching Full FullTarget Release Released Released Functional block diagram
MCOB 16-pin 5 x 5 x 1.1 mm
WiMAX Amplifier
WSD Wireless Semiconductor Division
42 Avago Confidential
Value Propositions 5V operation
High efficiency
29dBm Linear Pout
Integrated switch control attenuator
Integrated shutdown and power detector
Partial output match enable optimum narrow
band performance with different external matching
Note 1: Linear Output power measured at 64QAM OFDMA modulation per IEEE 802.16e specs
* Input fully-matched and output partial matched
2.3-2.7GHz 29dBm OFDMA Linear Power AmplifierDemoboard/Samples Availability: Now!!!
Part number MGA-43228 MGA-43328
Freq range (GHz) 2.3-2.5 2.5-2.7
Vdd (V) 5 5
Idd (mA) @ Plin 1023 1017
Idq (mA) 515 470
Pout (dBm)*note 1 29.1 29.3
EVM (%) 2.50% 2.50%
PAE (%) 15.70% 16.60%
Gain (dB) 38.5 37.4
Det Range (dB) 20 20
Atte. (dB) 23.8 24.5
Package (mm) 5x5x0.85 5x5x0.85
P1dB (dBm) 36 36
Matching Partial* Partial*
5.0x5.0mm QFN
WiMAX/LTE Amplifier
WSD Wireless Semiconductor Division
43 Avago Confidential
Value Propositions
• 4 Pin Diodes in SOT 25 industrial standard package
(2.9 x 1.6 x 1.0mm)
• Broad band application from 300KHz – 3GHz
• Voltage Controlled Attenuator
• High Input IP3
• High Attenuation Range
• Low Insertion Loss
Target Applications
Attenuator for Cellular Base Station, CATV, VSAT
HSMP-3816 & HSMP-3866 Quad Pin Diode Attenuator
36 dB36.5dBAttn Range, 0V<Vc<+5V
38dB
22dB
45 dBm
3.5 dB
HSMP-3816
30 dBm Input IP3
18dBReturn Loss
NAAttn Range, +1V<Vc<+15V
2.5 dB
HSMP-3866
Insertion Loss
Typical Parameters at 1GHz
SOT-25 Package
2.9 x 1.6 x 1.0mm
Voltage Controlled Attenuator
WSD Wireless Semiconductor Division
44
3.8x3.8 MCOB
Avago ALM-38140
Key Value Proposition Broad band application from 50MHz – 4GHz
Current Controlled Attenuator, 1-5 Vctrl, 0-20mA
High Input IP3 & P1dB
High Attenuation Range
Phase Shift minimised with external inductor
Low Insertion Loss
Built in matching and biasing network
Reduced board space
Molded Chip On Board (MCOB) package
Target Applications:Cellular Base Station, CATV, VSAT
ALM-38140Diode Based Pie Attenuator Module
Freq
(MHz)
IIP3
(dBm)
IP1dB
(dBm)
Dynamic
Range
(dB)
Phase
shift
(deg)
Max
Attn
(dB)
IL (dB) Input RL
(dB)
Output
RL (dB)
Current
(mA) @ 5V
50 50.0 28.0 41.1 40.7 43.7 2.62 -17.4 -17.4
20.5
500 50.0 28.8 38.1 40.5 40.8 2.72 -18.1 -18.0
1000 51.9 29.7 35.7 68.8 38.5 2.84 -19.8 -19.6
2000 51.7 31.2 30.3 105.2 33.4 3.14 -14.3 -13.5
2500 52.1 31.3 27.7 117.9 31.0 3.28 -14.3 -13.1
3500 51.8 32.7 22.5 138.1 26.3 3.78 -14.4 -12.0
Voltage Controlled Attenuator
Parasitic Effect
Cancellation
WSD Wireless Semiconductor Division
45
ALM-80110 (0.4-1.6GHz) & ALM-80210 (1.6-2.7GHz)Broadband 0.25W Variable Gain Amplifiers
Key Value propositions
• Best in class dynamic range (>30dB)
• High linearity up to 39.5 dBm OIP3
• Low phase shift (<15deg with external inductor)
• Broad band application
• 50Ohm input matched and output pre-match
• Molded Chip On Board (MCOB) packageTarget Applications:
• AGC or Temperature Compensation Circuitry
5.0x5.0mm MCOBAvago ALM-xxxxx
Part Number Freq
(MHz)
OIP3
(dBm)
P1dB
(dBm)
Dynamic
Range
(dB)
Gain
(dB)
NF
(dB)
IRL
(dB)
ORL
(dB)
PAE
(%)
Control
Voltage
(V)
Current
(mA)
ALM-80110 900 40.0 23.2 40.0 13.5 4.8 17.0 12.0 41.0
1-5V 110ALM-80210 1900 39.5 23.5 33.0 9.8 4.8 13.5 10.5 37.0
Current Controlled VGA
WSD Wireless Semiconductor Division
46 Avago Confidential
High Power Handling PIN Diode – HSMP-386J
Key Value propositions
• High power handling > 40dBm.
• High power dissipation using power package.
• Low Insertion loss.
• Broad band application
Target Applications:
• Wireless system requiring high power
transmit/receive switching
QFN 2x2mm
Typical Series
Resistance
Typical Breakdown
Voltage
Typical Forward
Voltage
Typical Total
Capacitance
RS (Ω) VBR (V) Vf (V) CT (pF)
0.65 120 0.8 0.75
Test ConditionsIF = 50 mA VR = VBR IF = 50mA
VR = 50V
f = 100 MHz Measure IR ≤ 5uA f = 1MHz
PIN Diode Switch
WSD Wireless Semiconductor Division
47 Avago Confidential
Note:
§ Vc1 = 5V,Vc2 = 0V, Ic1 ~ 50mA during Tx mode.
§ Vc1 = 0V, Vc2=5V, Ic2 ~- 50mA during Rx mode.
**Design concept and specification might change upon market release
ALM-40220TD-SCDMA & TD LTE 10W High Power SPDT Switch
Vctrl 1
Ant
Tx
Rx
Vctrl 2
5.0x5.0mm MCOBAvago ALM-40220
Parameter Unit Min Typ Max
Freq MHz
TX-ANT Insertion Loss dB 0.45
RX-ANT Insertion Loss dB 0.5 0.6
TX Return Loss dB 25
Ant Return Loss (Tx Mode) dB
RX Return Loss dB 25
Ant Return Loss (Rx Mode) dB
TX-RX ISO (Tx Mode) dB 35 40
Ant-RX ISO (Tx Mode) dB 35 40
RX-TX ISO (Rx Mode) dB 26
Ant-TX ISO (Rx Mode) dB 17
TX Input P0.1dB dBm 40
TX-Ant IIP3 * dBm 60
RX Input P0.1dB dBm 18
RX Input P1dB dBm 22
ANT-RX IIP3 dBm 31
EVM (with system EVM removed) % 1
Tx RF Switching Speed
(10% -90% RF voltage)
Tx Turn-on Stage
F=2.010GHz
1MHz Rep Rate in Modulating Mode
uS 1
2010-2025
No Spec
No Spec
PIN Diode Switch
WSD Wireless Semiconductor Division
48 Avago Confidential
PA
Circulator
LNA
Ant
TX
Vc1Va Vc2
RX
TX
Vc1Va
RX
Ant
50ohm
Vc2
50ohm
CL
Chini
Chini
PALNA
• Tx and Rx arm internally connected to Vc2 pad.
• Tx on, Rx off, Rx will switch to external 50ohm termination.
• Rx on, Tx off, Tx will switch to external 50ohm termination.
• During Tx mode, Ant pin connected to Tx pin to
absorb any reflected signal from Ant by 50ohm
termination.
• During Rx mode, Ant pin connected to Rx pin.
LNA Protection Switch
ANT Switch
External 50ohm Termination Suggestion
WSD Wireless Semiconductor Division
49
Value Proposition
• Unique 4 PIN Diode Diversity Switch
Configuration
• High Linearity
• Great Power Handling
• Low IL and High ISO
• Design Simplicity And Board Space Saving
With Semi Integrated Solution
•
Applications:
Cellular Infrastructure, DECT Phone, Wireless
LNA, WiMAX
HSMP-386D/389D PIN Diode Diversity Switch
HSMP-389DHSMP-386D
SOT-143 Package
3.0 x 1.3 x 1.0 mm
Typical Parameters at
900MHzHSMP-386D HSMP-389D
Insertion Loss 0.35 dB 0.36 dB
Return Loss 27 dBm 28 dBm
Isolation 25.4 dB 24.7 dB
Input IP3 56.8 dBm 55.4 dBm
Input P1dB 47.4 dBm 46.3 dBm
PIN Diode Switch
WSD Wireless Semiconductor Division
50
Value Proposition
• Unique combination of PIN and Schottky Diode
•Schottky diode rectifies the RF and biases the PIN
diode on at lower input drive level
• Low Limiting Threshold Power
• Low IL
•IL can be minimised with external inductor resonating
out parasitic capacitance. 0.4dB At 2.4GHz.
• Design Simplicity And Board Space Saving With Semi
Integrated Solution
Applications:
Cellular Infrastructure , WiMAX, LTE, Receiver System, RFID
front end protection
Typical Parameters
at 900MHz
ASML-
5822
ASML-
5829
Insertion Loss 0.85dB 0.33dB
Return Loss 10.9dB 15.6dB
Output P1dB 2.85dBm 6.05dBm
ASML-5822/5829 Schottky Assisted Low Power
Limiter
ASML-5829ASML-5822
SOT-323 Package
2.0 x 1.2 x 0.95 mm
-80
-70
-60
-50
-40
-30
-20
-10
0
10
20
-10 -5 0 5 10 15 20 25
Pin (dBm)
Po
ut (
dB
m)
fundamental
seco nd harmo nic
CSCH
CPIN
LEXT
ASML
5822
Low Power Limiter
WSD Wireless Semiconductor Division
51 Avago Confidential
Key Value Propositions
• High linearity
• Low LO power
• Differential RF/LO inputs and differential or single ended IF
outputs
Target Applications
• Down Converter for cellular base stations (GSM, CDMA,
WCDMA, TD-SCDMA, CDMA2000, LTE, WiMAX, etc)
IAM-92516 High Linearity Mixer
Mixer
LPCC
3x3mm279-6.012.52650.4-3.5
IAM-
92516
(dBm)(dBm)(dB)(dB)(mA)(V)(GHz)
PackageIIP3P1dBGainNFIdqVdd
Freq
Range
Part
number
IAM-92516
LPCC
3x3x0.85mm
WSD Wireless Semiconductor Division
52
Under Development
WSD Wireless Semiconductor Division
53 Avago Confidential
Legend
Project Status
In development
Planned development
Concept
Product released and available for purchase
Fully defined project actively being developed; samples
may be available
Partially defined project, resources not yet allocated
Possible future project (continues family or proposed custom)
Description
Released
New Product Roadmap
WSD Wireless Semiconductor Division
54
2010 2011 2012 2013
Infrastructure Product Roadmap – LNAs
MGA-633P8
900 MHz Active Bias LNA, QFN 2x2mm
MGA-634P8
2 GHz Active Bias LNA, QFN 2x2
Next Generation Balanced Active Bias LNA,
QFN 4x4mm (3 Products)%
MGA-635P8
2.5 GHz Active Bias LNA, QFN 2x2
MGA-636P8
900 MHz Low NF High Linearity LNA, QFN 2x2mm
MGA-637P8
2 GHz Low NF High Linearity LNA, QFN 2x2mm
MGA-638P8
2.5 GHz Low NF High Linearity LNA, QFN 2x2mm
Rapala w2
Rapala w3
Rapala w1
Nebula 1
Nebula 2
Nebula 3
In development
Planned development
Concept
ReleasedMGA-683P8/684P8
Low Cost LNA QFN 2x2mm
Balance LNA
Low Cos LNA
Sin
gle
En
ded
1stS
tag
e L
NA
Bal
ance
1st
Sta
ge
LN
A
2GHz High Gain 2 Stage Amp, QFN
4x4mm
Mangrove 1
900MHHz High Gain 2 Stage Amp,
QFN 4x4mm
Mangrove 2
2.5GHz High Gain 2 Stage Amp, QFN
4x4mm
Mangrove 3
Next Generation Dual Stage LNA
QFN TBD (3 Products)
TBD
2nd
or
3rd
Sta
ge
LN
A
Du
al S
tag
e
Sta
ge
LN
A
Next Generation High IP3 LNA
QFN 2x2mm (3 Products)
TBD
WSD Wireless Semiconductor Division
55
Infrastructure Product Roadmap – LNA Module & Low Voltage LNA
ALM-11036/11136
900MHz TMA Bypass LNA, MCOB 7x10mm
Ketapang1
ALM-11236/11336
2GHz TMA Bypass LNA, MCOB 7x10mm
1.9-2.2GHz TD-SCDMA/LTE LNA + High Power SPDT
Switch Module, MCOB 8x8mm
2.3-2.4GHz TD-SCDMA/LTE LNA + High Power SPDT
Switch Module, MCOB 8x8mm
Ketapang2
Sago1
Sago2
MGA-64506/65506
3.3V Bypass LNA with Shutdown, QFN 2x1.3mm
Mimosa
TM
A B
ypas
s L
NA
Sw
itch
+ L
NA
Lo
w C
urr
ent
LN
A
+ B
ypas
s
3.3V 0.4-1GHz Bypass LNA
QFN 2x1.3mm
2010 2011 2012 2013
In development
Planned development
Concept
Released
TBD
WSD Wireless Semiconductor Division
56
Infrastructure Product Roadmap – Drivers and VGAs
2GHz High Gain VGA
MCOB 6x6mm
In development
Planned development
Concept
Released
MGA-43128
700 MHz LTE 5V Driver, QFN 5x5mm
Heron
Road Runner2
2.1 GHz Linear PA (Picocell & Femtocell)
<-48dBc @28dBm@, MCOB 5x5mm
1.9 GHz Linear PA (Picocell & Femtocell)
<-48dBc @28dBm@, MCOB 5x5mm
800MHz Linear PA (Picocell & Femtocell)
<-48dBc @28dBm@, MCOB 5x5mm
Flamingo 2.1
Flamingo 0.8
Flamingo 1.9
Dri
ver
Am
plif
iers
V
GA
2010 2011 2012 2013
2.3-2.5 GHz Linear PA (Picocell & Femtocell)
<-48dBc @28dBm@, MCOB 5x5mm
Flamingo 2.4
2.5-2.7 GHz Linear PA (Picocell & Femtocell)
<-48dBc @28dBm@, MCOB 5x5mm
Flamingo 2.6
0.7-0.8 GHz Linear PA (Picocell & Femtocell)
<-48dBc @28dBm@, MCOB 5x5mm
Flamingo 0.7
WSD Wireless Semiconductor Division
57
Infrastructure Product Roadmap: Gain Blocks
MGA-31389/31489
High Gain 37dBm Gain Block (0.4-3GHz)
AVT-54689 AVT-55689
HBT Gain Block Hi-OIP3 G:17dB
MGA-31589/31689
High Gain 0.5W Gain Block
MGA-31189/31289
High Gain 40dBm Gain Block (0.4-3GHz)
Jati
Pinang
AngsanaPlus
Rajah Brooke
MGA-31789/31889
High LFOM 0.1W Gain Block
Zazu0.1
W
0.25
W
0.5
W<
0.1
W
2010 2011 2012 2013
In development
Planned development
Concept
Released
3-6GHz High LFOM 0.25W Gain Block
QFN, TBD (16dB Gain)
TBD
3-6GHz High LFOM 0.25W Gain Block
QFN, TBD (20dB Gain)
TBD
3-6GHz High LFOM 0.25W Gain Block
QFN, TBD (20dB Gain)
TBD
3-6GHz High LFOM 0.5W Gain Block
QFN, TBD (20dB Gain)
TBD
WSD Wireless Semiconductor Division
58 Avago Confidential
MGA-636P8, MGA-637P8 & MGA-638P8BTS Low NF High Linearity LNA
Value Propositions
Industry’s standard QFN 2mmx2mm package
Very high linearity
Low NF
High & consistent gain across frequency
Built in Shutdown Function
Stable performance across temperature
Target Applications:
Q2/3 LNA or Pre-driver Amplifier for cellular base
stations (GSM, CDMA, WCDMA, TD-SCDMA,
CDMA2000, LTE and WiMAX, etc)
Bottom View
Gro
und
8
7
6
5
1
2
3
4
MoSLP 2.0 x 2.0 x 0.75 mm
Simplified Schematic
Released!!!
L1
L2
C3
C1 C2
C4
R1
RFin RFout
Vdd
[2]
[1]
[3]
[4]
[7]
[8]
[6]
[5]
C6
RbiasC5
C7 C8
Vbias2 Power Down
Bias
Part number Freq Range
(GHz)
Test Freq
(GHz)
Vd
(V)
Idq
(mA)
NF
(dB)
Gain
(dB)
IIP3
(dBm)
S11
(dB)
S22
(dB)
MGA-636P8 0.45 – 1.5 0.7 4.8 114 0.5 17.9 25.0 10.0 17.0
MGA-637P8 1.5 – 2.5 1.7 4.8 90 0.70 16.8 24.0 20.0 9.0
MGA-638P8 2.5 – 4.0 2.6 4.8 70 0.81 15.5 24.5 13.0 7.0
WSD Wireless Semiconductor Division
59 Avago Confidential
Value Propositions
• Ultra low noise figure
• Broadband 0.4 – 4.0GHz
• Built active bias circuit
• Smart bias: Adjustable current
• Unconditionally stable
Target Applications:
• Low Noise Amplifier for Cellular Repeater
Bottom View
Gro
und
8
7
6
5
1
2
3
4
MoSLP 2.0 x 2.0 x 0.75 mm
34.717.60.6045 @ 5V0.4-1.5MGA-683P8
(dBm)(mA)(GHz)
OIP3CurrentFreq rangeProduct S11
(dB)
21.0
S22
(dB)
13.00.9
P1dB
(dBm)
21.9
NF
(dB)
Gain
(dB)(GHz)
Test range
Simplified Schematic
31.017.10.7834 @ 5V1.5-4.0MGA-684P8 19.0 12.51.9 21.3
MGA-683P8 & MGA-684P8LNA For Cellular Repeater
Released!!!
WSD Wireless Semiconductor Division
60 Avago Confidential
ALM-11036, ALM-11136, ALM-11236 & ALM-11336TMA LNA Module With Fail-Safe Bypass
Target Release : April’11Sample Availability: Now!!!
7.0x10.0mm
x1.2mm
MCOB
TMA System Block Diagram
Module
Avago
ALM-xxxxx
Key Value propositions
• Very Low Noise Figure
• Low loss fail safe by-pass mode
• High Gain and linearity
• PIN Diode high linearity switch
• Simplify application CircuitryTarget Applications:
• Tower Mounted Amplifier (TMA)Parameter ALM-11036 ALM-11136 ALM-11236 ALM-11336
Frequency 776_850 MHz 870_915 MHz 1710_1850
MHz
1850_1980
MHz
Test Freq 849 MHz 900 MHz 1780 MHz 1980 MHz
Gain 15.6 dB 15.4 dB 15.9 dB 15.3 dB
S11 >18 dB >18 dB >18 dB >18 dB
S22 >18 dB >18 dB >18 dB >18 dB
Noise Figure 0.78 dB @ 25C 0.76 dB @ 25C 0.85dB @ 25C 0.88dB @ 25C
IIP3 21.3 dBm 22.0 dBm 17.3 dBm 17.9 dBm
IP1dB 4.0 dBm 4.6 dBm 3.5 dBm 3.8 dBm
Bypass Insertion Loss 0.82 dB 0.85 dB 0.75 dB 0.78 dB
Bypass S11 >18 dB >18 dB >18 dB >18 dB
Bypass S22 >18 dB >18 dB >18 dB >18 dB
Switch Isolation (LNA On) >50 dB >50 dB >50 dB >50 dB
Supply Voltage 5V 5 V 5V 5 V
Supply Current 92 mA 92 mA 99 mA 100 mA
Released!!!
WSD Wireless Semiconductor Division
61
ALM-12124 & ALM-12224TD-SCDMA/LTE High Power Switch-LNA Module
Under Development
WSD Wireless Semiconductor Division
62
ALM-12124 & ALM-12224TD-SCDMA/LTE High Power Switch-LNA Module
8.0 mm x 8.0mm x 1.2mm
Rx Mode (Ant to Rx Out)
Parameter Unit
ALM-12124 ALM-12224
Freq MHz 1880-2025 2300-2400
Test Freq MHz 2018 2400
Supply Voltage (Vbias, Vdd1, Vdd2) V 5 5
Control voltage (Vctrl1, Vctrl2) V 0, 28 0, 28
Total current mA 225 229
NF dB 0.85 0.99
Gain dB 39.2 36.7
OIP3 (*Pin = -25dBm) dBm 36.5 38.7
OP1dB dBm 23.6 22.8
Sw itching (Tx/Rx mode) nS <1us <1us
Ant Return loss dB -15.6 -16.2
Isolation (LNA1 output - LNA2 input) dB 51.2 54.4
LNA1 output return loss dB -18.0 -25.4
LNA2 input return loss dB -20.1 -22.6
Tx Mode (Ant to Tx)
Parameter Unit ALM-12124 ALM-12224
Tx-Ant Insertion loss dB 0.30 0.37
Max input pow er (CW, 5mins testing) dBm 47.5 47.5
Isolation (ANT-LNA1 input) dB 51.5 41.2
Ant Return loss dB -20.7 -20.0
Spec
Avago Confidential
Released!!!
WSD Wireless Semiconductor Division
63 Avago Confidential
MGA-13116, MGA-13216 & MGA-133162-Stage High Gain & High Linearity LNA
Value Propositions
Integration of Q1 & Q2 LNA in single package
Very high linearity at low current
High Gain
Superior Q1-Q2 Isolation
Broad operating frequency range
Pre-matched for ease of useTarget Applications:
• Low Noise Amplifier for cellular base stations (GSM, CDMA,
WCDMA, TD-SCDMA, CDMA2000, LTE, WiMAX, etc)
Released!
Part No. Freq Range (MHz)
Test Freq (MHz)
Vd (V)
Id (mA)
NF (dB)
Gain (dB)
OIP3 (dBm)
IRL (dB)
ORL (dB)
OP1dB (dBm)
Q1-Q2 ISO (dB)
MGA-13116 400-1500 900 5 166 0.54 38.0 42.0 18.0 12.0 23.4 51
MGA-13216 1500-2500 1950 5 175 0.68 35.9 40.5 15.3 10.3 23.3 46
MGA-13316 2500-4000 2500 5 193 0.70 34.0 41.0 NA NA 23.0 50
WSD Wireless Semiconductor Division
64
* Demoboard losses are deembedded.
** VLOW : < 0.8V, VHIGH : > 1.8V
MGA-16116, MGA-16216 & MGA-16316Ultra Low NF Balance LNA MMIC With Shutdown Feature
4 mm
4 mm
16-lead QFN, ( 4x4 )mm
Key Value Propositions
• Ultra Low NF
• High Linearity
• Dual, matched pair LNA
• Excellent isolation
• Built-in active bias & Power Down circuitry
•Industry standard QFN 4x4 package
Released!
Part number Freq Range
(GHz)
Test Freq
(GHz)
Vd
(V)
Idq
(mA)
NF
(dB)
Gain
(dB)
IIP3
(dBm)
S11 (dB) Vshutdown**
MGA-16116 0.45 – 1.5 0.9 4.8 60.9 0.27* 18.4 19.1 -10.9 Active Low
MGA-16216 1.44 – 2.35 1.95 4.8 52.5 0.32* 18.4 17.1 -9.0 Active Low
MGA-16316 2.3 – 4.0 2.6 4.8 53.3 0.45* 18.2 15.5 -12.7 Active Low
WSD Wireless Semiconductor Division
65
MGA-31716 & MGA-31816High Linearity / Low Current 0.1W Driver Amplifier
Value Propositions
DC to 4.0GHz operating freq
Industry’s standard QFN 3mmx3mm package
High and consistent gain across major freq band
High linearity / Low current (Figure of Merit)
50 ohm matching
Stable performance across temperature
Target Applications:
Pre-driver Amplifier for cellular base stations (GSM,
CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE and
WiMAX, etc)
Released!
Part number
Freq Range (GHz)
Test Freq (GHz)
Vd (V)
Idq (mA)
P1dB (dBm)
OIP3 (dBm)
Gain (dB)
S11 (dB)
S22 (dB)
NF (dB)
MGA-31716 DC – 1.5 0.9 5 49 21.2 39.0 20.1 15.2 16.5 1.6
MGA-31816 1.5 – 4.0 1.9 5 50 19.8 39.5 19.5 15.8 10.3 1.6
Can be used to trade-off
Linearity with OP1dB
WSD Wireless Semiconductor Division
66 Avago Confidential
MGA-43128700MHz 29dBm OFDMA Linear Power Amplifier
**Design concept and specification might change upon market release
Value Propositions 5V operation
High efficiency
29dBm Linear Pout
Integrated switch control attenuator
Integrated shutdown and power detector
Optimize for band 12/13 downlink
Input fully match
Partial output match enable optimum narrow
band performance with different external matching
* Input fully-matched and output partial matched
Part number MGA-43128Freq range (GHz) 728-756Vdd (V) 5Idd (mA) @ Plin 780Idq (mA) 380Pout (dBm) 29.2EVM (%) 2.5%PAE (%) 24%Gain (dB) 33.4Det Range (dB) 15Atte. (dB) 18Package (mm) 5x5x0.85P1dB (dBm) 36Matching Partial*
5.0x5.0mm QFN
MGA-43128
Released!
WSD Wireless Semiconductor Division
67
Value Propositions 5V operation, operable up to 5.5V for Higher Pout
High efficiency
High Linear Pout
Input & Output Fully Matched
Integrated shutdown and power detector
Power Amplifier For In Door Small Cell
5.0x5.0mm
MCOB
1 Test Tone #1, 64 DPCH, +/- 5 MHz offset
Avago Confidential
Parameters MGA-43428 MGA-43528 MGA-43628
Freq range (GHz) 0.86-0.90 1.93-1.995 2.0-2.2
Vdd (V) 5 5 5
Idq (mA) 350 400 440
Pout (dBm) @50dBc ACLR *1 27.2 27.2 27.2
PAE (%) 14.9% 13.6% 14.0%
Gain (dB) 33.7 41.9 41.5
Det Range (dB) 20 20 20
Package (mm) 5x5x1.1 5x5x1.1 5x5x1.1
P1dB (dBm) 37.2 37.2 36.8
Matching Fully Matched Fully Matched Fully Matched
Released!
WSD Wireless Semiconductor Division
68
Value Propositions 5V operation, operable up to 5.5V for Higher Pout
High efficiency
High Linear Pout
Input & Output Fully Matched
Integrated shutdown and power detector
Power Amplifier For In Door Small Cell
5.0x5.0mm
MCOB
1 Test Tone #1, 64 DPCH, +/- 5 MHz offset
Avago Confidential
Parameters MGA-43728 MGA-43828 MGA-43013
Freq range (GHz) 2.62-2.69 0.88-0.97 Band 13
Vdd (V) 5 5 5
Idq (mA) 400 400 400
Pout (dBm) @50dBc ACLR *1 27.0
Pout (dBm) @48dBc ACLR *2 27.0 27.0
PAE (%) 14.0% 15.0% 15.0%
Gain (dB) 41.0 34.0 34.0
Det Range (dB) 20 20 20
Package (mm) 5x5x1.1 5x5x1.1 5x5x1.1
P1dB (dBm) 37.0 37.0 37.0
Matching Fully Matched Fully Matched Fully Matched
Under Development
2 E-UTRA Test Model 1.1 10MHz 50RB
MGA-43728, 43828Target Release – March’13Sample Availability: Nov’12
MGA-43013Target Release – July’13Sample Availability: Feb’13
WSD Wireless Semiconductor Division
69
Key Value propositions
• Superior linearity performance
• High dynamic range
• High Gain
• Broad band application
• Simplify application Circuitry
Target Applications:
• AGC or Temperature Compensation Circuitry
Parameter Unit 1450-2750MHz
Test Freq MHz 2140
Max Gain dB 23.8
S11 dB 15
S22 dB 10
Gain Control Range dB 38
NF dB 2 @max gain
ACLR1 @12dBm dBc -66.6
OIP3 dBm 42
OP1dB dBm 27.4
Pin Max dBm +15 min
Control Voltage
Range
V 0-3.3
Quiscent Current
(Vc=0) typ
mA 390
Stability factor unconditional
ALM-812241450-2750MHz High Gain VGA Module
Target Release – Sep’11Sample Availability: Now!!!
Avago Confidential
Released!
WSD Wireless Semiconductor Division
70 Avago Confidential
Back up
Slides
WSD Wireless Semiconductor Division
71 Avago Confidential
Market and Competition:
• WiFi LNA for Labtop, CPE, Access Point, USB
dongle, PDA/Smart Phones
Avago’s Competitive Advantage:
• Fully matched GaAs E-pHEMT LNA module
• Industry’s best NF and Gain performance at 2.4-
2.5GHz and 4.9-6GHz bands.
ALM-2812Dual band 2.4-2.5GHz & 4.9-6GHz (802.11a/b/g/n) WiFi LNA
WiFi LNA
MCOB, 3x3x1.1mm
Parameter 2.45GHz 5.5GHz
Voltage (V) 3.3 3.3
Current (mA) 15 23.4
Gain (dB) 16.7 23.2
NF (dB) 0.8 1.4
IIP3 (dBm) +6.1 -2.2
IP1dB (dBm) -5.8 -12.8
2.4-2.5GHz
4.9-6GHz
Vcc
Vcc
RFOut52
RFOut24
LNAOn52
LNAOn24
RFIn52
RFIn24
Simplified Schematic
WSD Wireless Semiconductor Division
72 Avago Confidential
UMTS 1.7-2.2 GHz, WiFi, WiBro WiMAX LNA
Value Propositions
Ultra thin package (0.4mm) for module application
Very low noise E-pHEMT technology
High linearity at low operating current
Built in bias control & shutdown functions
Low external component count
P/N
Freq
Range
(GHz)
Freq (GHz)
LNA Mode Bypass
Package (mm)Vd (V) Id (mA) NF (dB) IIP3 (dBm)
Gain
(dB)
IP1dB
(dBm)IL (dB)
IIP3
(dBm)
MGA-645T6 1.5 - 3.0 2.4 3 7 1.1 7 15 -6 4.5 17 2x1.3x0.4
MGA-655T6 2.5 - 4.0 3.5 3 10 1.2 3 15 +1 6.5 19 2x1.3x0.4
MGA-675T6 4.9 - 6.0 5.5 3 10 1.75 -3 18 -10 N/A N/A 2x1.3x0.4
Surface Mount
2.0 x 1.3 x 0.4 mm3
UTSLP
Note: MGA-675T6 does not have bypass switch
MGA-675T6 MGA-655T6 MGA-645T6
Wireless Data LNA
WSD Wireless Semiconductor Division
73 Avago Confidential
New UMTS, WiFi, WiMAX & LTE LNA
Value Propositions
Very low noise E-pHEMT technology
High linearity at low operating current
Built in bias control & shutdown functions (<100uA shutdown
current)
Low external component count
Miniature Package
Target Application
LNA or Pre-Driver for USB Dongle, CPE, AP, Cellular Handset
and etc.
P/N
Freq
Range
(GHz)
Freq (GHz)
LNA Mode Bypass
Package (mm)Vd (V) Id (mA) NF (dB) IIP3 (dBm)
Gain
(dB)
IP1dB
(dBm)IL (dB)
IIP3
(dBm)
MGA-64606 1.5 - 3.0 2.4 3 7 1.1 7 15 -6 4.5 16 2x1.3x0.5
MGA-65606 2.5 - 4.0 3.5 3 10 1.2 5.5 15 +1 4.2 19 2x1.3x0.5
Surface Mount
2.0 x 1.3 x 0.5 mm3
DFN
Vbyp VsdBypass
SwitchMode
Low Low Close Bypass
High Low Open LNA
xxx High Open Isolation
Target Release MGA-64606: Feb’11; MGA-65606: Mar’11 Samples now
Wireless Data LNA
WSD Wireless Semiconductor Division
74 Avago Confidential
MGA-685T64.7nH
68pFRF In47nH
68pF
4.3Kohm
0ohm
68pF
10nF
3V
RF Out
2
5
6
MGA-685T64.7nH
68pFRF In47nH
68pF
4.3Kohm
0ohm
68pF
10nF
3V
RF Out
2
5
6
Mobile TV and UMTS 0.7-1.0 GHz LNA
Value Propositions
Ultra thin package (0.4mm) for module application
Very low noise figure
High linearity at low operating current
Built in bypass function (MGA-785T6)
Low external component count
P/N
Freq
Range
(GHz)
Freq (GHz)
LNA Mode Bypass
Package (mm)Vd (V) Id (mA) NF (dB) IIP3 (dBm)
Gain
(dB)
IP1dB
(dBm)IL (dB) IIP3 (dBm)
MGA-685T6 0.1 - 1.5 0.5 3 10 0.8 0 19 -0.5 N/A N/A 2x1.3x0.4
MGA-785T6 0.1 - 1.5 0.6 3 10 1.5 0 15.5 TBD 2.7 30 2x1.3x0.4
Surface Mount
2.0 x 1.3 x 0.4 mm3
UTSLP
MGA-785T6
MGA-685T6
MGA-725T6
+3 volts
47 nH
27 nH
W = 28 mils
L = 90 mils
Board Material:
16 mils FR4
0.1 uF
RF in RF outW = 28 mils
L = 90 mils
22 nH
51 ohm 120 pF68 ohm (10 mA)
OR
110 ohm(7 mA)
120 pF
4.7 pF 8.2 pF
200 pF
MGA-685T6
MGA-785T6
Wireless Data LNA
WSD Wireless Semiconductor Division
75 Avago Confidential
MGA-545P8 50MHz to 7GHz Medium Power Amplifier
Value Proposition:
Single +3.3V Supply
PAE 46% at Psat 22dBm
Simple match at input
Unconditionally stable
Target Application:
IEEE802.11a,b and g WiFi applications, 50MHz to 7GHz
applications
Vdd = 3.3V Input Signal=OFDM signal with 54Mbps, Modulation=64QAM
Simplified Internal Schematic
ParameterTypical Spec
(Saturation Mode)
Typical Spec
(Linear Mode)
Test Frequency 5.825 GHz 5.825 GHz
Bias Condition 3.3V, 92mA 3.3V, 135mA
Gain 9.5 db 11.5 dB
OIP3 34 dBm 34 dBm
P1dB 22 dBm (Psat) 21 dBm
Linear Power @ 4% EVM,
54Mbps OFDMNA > 15dBm
Package QFN 2x2x0.75mm QFN 2x2x0.75mm
Wireless Data PA
WSD Wireless Semiconductor Division
76 Avago Confidential
MGA-83563 0.5 to 6GHz Medium Power Amplifier
Value Proposition:
Single +3V Supply
50 Ohm matched output, and simple match at input
High PAE 38% at Psat
Unconditionally stable
Target Application:
0.5 to 6GHz wireless applications
SOT-363
2 x 1.2 x 0.95 mm
Simplified Internal Schematic
Parameter Typical Spec
Test Frequency 2.4 GHz
Bias Condition 3V, 152mA
Gain 22.0 dB
OIP3 29.0 dBm
P1dB 19.2 dBm
Psat (Idd=139mA) 22.4 dBm
PAE 37%
General Purpose Amp
Recommended