5 AVAGO WSD Infrastructure_2012-10

WSD Wireless Semiconductor Division

1 Avago Confidential

Connecting You to the Digital World

Jimmy Ang

Product Marketing Manager

RF Multi-Market Components

Wireless Semiconductor Division



Avago WSD Worldwide

Headquarters

San Jose

Research and Development

San Jose, Seoul, Penang, Munich

Wafer Fabrication

Avago Ft. Collins, CO; 6” wafer fab

GaAs PHEMT, E-pHEMT

FBAR

Silicon Bipolar and Diodes

Foundry (Win Semi and Triquint )

GaAs HBT PA

Assembly and Test

Assembly: Foxconn in China, ASE Korea, Inari in Malaysia, others

Test: Foxconn, Inari, ASE, others

Bay Area, California

Penang, MalaysiaFt. Collins, ColoradoR&DMarketingManufacturing

Wafer Fab

HeadquartersR&DMarketing

Seoul

R&DMarketing

R&D

Munich



Power AmplifierHigh Efficiency

Helping Customers With Differentiated Technologies

FilterMiniature

GPS FEMintegration

LNA / Driver AmpLow Noise /High linearity

UMTS / LTE

GSM

GPS / WLAN / Mobile WiMAX / Digital TV

WLAN / Mobile WiMAX

GSM Quad-Band Power Amplifier

Duel Band Low Noise Amplifier for

WLAN 802.11a/b/g notebook computersCDMA PCS-band power module

with lid removed

integrated

matching

& bias

FBAR

Cellular / WiMAX Infrastructure

mmWave MMICLow cost

VSAT

P2P / P2MP

GPS / WiFi / WiMAX

CELL / PCS

mmWave Power Amplifier

GaAs

PHEMTDepletion-mode

Enhancement-mode

Cellular / WiMAX Infrastructure



Leading Low Cost & High Volume Silicon Fab

SiliconDiode,

Transistor

& RFIC

Silicon Bipolar fT 25GHzGain Blocks

Silicon Bipolar fT 10GHzTransistors & Gain Blocks

Silicon PIN DiodesSwitch, Attenuator, Limiter

Silicon Schottky DiodesDetector, Mixer, Clipping/Clamping

•Base Station

•Satellite and Cable TV

•ETC, RF Tag

•Handset

•Base Station

•Military

•Satellite, Cable, Terrestrial TV

http://www.photostogo.com/store/Chubby.asp?ImageNumber=271692



Note:

This presentation contains Pre-released product information: Avago Technologies reserves the right to alter specifications, features, functions, markings, manufacturing release dates and general availability of the product at any time.

RF Solutions for

Wireless InfrastructureLast updated: August 2010



WSD Technology for Wireless Infrastructure

Ultra Low NF LNA for Receiver Sensitivity

Improvement

Gain Block & Driver Amp with Great Linearity &

High Efficiency

Highly Integrated Multi-Chip & Fully Match Module

Solution

Application SimplicityMulti Function IntegrationLow External SMT’s Count

Board Space ReductionDesign Cycle Optimization

Ultra Low NFGreat Linearity

Enable Broader Coverage

High Linearity

Low Current

Industry Standard Package

Broad Performance Selection

E-pHEMTSi RFIC

InGaP HBTE-pHEMT

PCB-based modules

Multi Chip Lead Frame

Tech

no

log

yV

alu

e P

rop

osi

tio

n


7

1st stage Low Noise Amplifier ATF-3xx43/M4, ATF-5xx43/M4,MGA-63xP8, MGA-1x516 Best In Class Ultra Low NF

2nd stage LNA, Pre-Driver Amp & Gain Block ATF-5x1P8/89, MGA-30x16, MGA-3xx89 MGA-5xx43/89, MGA-8xx63 High Linearity, Low Current Consumption & Industrial Standard Package

Driver Amp & PA ALM-31x22/32x20 High Linearity & Fully Match

Integrated Solution ALM-1x22 – Dual Stage Low Noise, High Linearity & High Gain Balanced LNAALM-80x10 – 0.25W VGAMGA-1x516 – 2-Stage High Gain & Linearity LNAMixers IAM-9x516

Buffer Amp MGA-565P8 – High ISO With Adjustable Psat

Building Blocks Broad Package Selection

GaAs Infrastructure Product Portfolio

SC70

MiniPak QFN(Various Dimension)

SOT-89

MCOB (Molded Chip-on-Board; Various Dimension)

(1.4 x 1.2 x 0.7 mm)

(4.5 x 2.5 x 1.5 mm)(2 x 1.2 x 0.95 mm)

Avago Confidential


8

Ultra Low Noise LNA with E-pHEMT TechnologyOffer Superior Receiver Sensitivity

Idd (mA)

NF (dB)

0.5

- Ultra Low NF (<0.5dB) together with high linearity (>35dBm) - Enhanced receiver sensitivity performance for BTS application- Consistent performance in mass production- Achieved with Avago Proprietary 0.25um E-pHEMT Technology & Unique Design Capability

50

Avago Confidential


9

Avago Technologies BTS LNA Product Portfolio

Design Slots Part Numbers Key Value Proposition

1st Stage LNA ATF-3xx43/M4, ATF-5xx43/M4,

MGA-6x563,MGA-63xP8

Ultra Low NF, Good S11, High

Pin Max Rating, Great IP3 &

Low Current Consumption

2nd or 3rd Stage LNA ATF-5x1P8/89, MGA-535xx,

MGA-6x563,MGA-63xP8, MGA-

3xx89

High IP3, Good RL’s, Low NF,

High Gain & Low Current

Consumption

Balance and Dual

Stage LNAMGA-1x516, MGA-13x16 Semi Integrated Solution

Enable Design Simplification &

PCB Space Saving

Multi-Chip Module

SolutionALM-1x22, ALM-12x24, ALM-

11x36

Application Specific Design: BTS LNA Module (Balance & Dual Stage)

TD-SCDMA High Power Switch LNA Module

TMA Bypass LNA Module

Avago Confidential


10

Highly Integrated & Reliable Module Packaging

TechnologyOffer Highly Reliable & Integrated Module Solution

- Highly integrated multichip solution realized with Avago Technologies highly reliable Coreless Substrate technology & established module integration technique - Proven reliability performance & MSL1/MSL2aenable- Superior Thermal Resistance vs conventional laminated substrate - High volume manufacturing experience- Ready to offer dedicated application specific solution for customer upon request

Complex and space consuming

discrete solution

Avago miniature multichip module

solution

Avago Confidential


11

Wireless Infrastructure LNA Roadmap

1st GenerationSC70

0.9dB NF

1st Gen Dual Stage LNAQFN 4x4mm2

<0.7dB NF; 38dBm OIP3

Dis

cret

e F

ET

Act

ive

Bia

s L

NA

Mu

lti-

Ch

ip

Mo

du

le

1st Stage Balance LNAQFN 4x4mm2

<0.5dB NF

3rd GenerationQFN 2x2mm2

0.37dB NF @900MHz

4th GenerationQFN 2x2mm2

0.4dB NF; >20dB Gain @1900MHz

ATF-3xx43, 5xx43/M4

SC70Low NF LNA

20122010200720032000

ATF-5x1P8QFN 2x2mm2, High IP3 LNA

ATF-5x189SOT89,

High IP3 LNA

2nd GenerationQFN 2x2mm2

0.53dB NF @900MHz

3rd GenerationQFN 2x2mm2

>22dBm IIP3; Shutdown Pin

Dual Stage Balance LNA

5x6x1.1mm3

MCOBApplication

Specific LNA Module

MCOB

2nd Gen Dual Stage LNAQFN 4x4mm2

<0.6dB NF; 40dBm OIP3

Increasing Gain while maintaining NF; Application specific Module Solution for design simplification

Avago Confidential


12

Avago Technologies Gain Block Product PortfolioFull Coverage With A Variety Of Selection

Ga

in (d

B)

Linearity, OIP3 (dBm)

25dBm 30dBm 35dBm 40dBm

16dB

20dB

*ADA-4643

*ABA-53563

*AVT-50663

*ADA-4743/89

*ABA-54563

*AVT-51663

*AVT-52663

*AVT-53663

*AVT-54689 *AVT-55689

*MGA-30889

18dB

22dB

* MGA-31389MGA-31489

* MGA-31189MGA-31289

*MGA-53589

45dBm

* MGA-31589MGA-31689

*MGA-30x16

SXA-389 EquivalentSBB-5089 Equivalent AH125 Equivalent

*MGA-30689

*MGA-30489

AH1 Equivalent

Avago Confidential


13

Wireless Infrastructure Gain Block Roadmap

AVT-5x663SC70 (6 Leads)

Broad Band, <30dBm OIP3

0.5W PAQFN 4x4mm2

>27dBm P1dB, >44dBm

OIP3

Si G

BIn

GaP

HB

T G

BE

-pH

EM

T G

B

ABA-3x563, 5x563SC70 (6 Leads)25GHz Ft HP25,

20dB Gain

20112009<2005

ADA-4x43SC70 (4 Leads)25GHz Ft HP25, Darlington GB

Increasing Gain while maintaining NF; Application specific Module Solution for design simplification

2010

AVT-5x663SOT-89

Broad Band, <35dBm OIP3

MGA-3xx89 0.1W & 0.25W PA

SOT-89

Broad Band, High Linearit, High Gain & Good Gain Flatness

MGA-31589/31689 0.5W PA

SOT-89

20dB Gain, >44.5dBm OIP3, 0.1dB Flatness,

<170mA.

High LFOM GB Family

QFN or SOT-89

>17dB LFOM

Avago Confidential


14

20 27

-53

-49

-45

AC

LR

1 / d

Bc

Linear Pout / dBm

•(869-960)MHz

•UMTS

•(1800-2000)MHz

•UMTS

•(2000-2200)MHz

•UMTS/TD-SCDMA

•(2500-2700)MHz

•Wimax/LTE

•(3500-3800)MHz

•Wimax/LTE

• Enterprise FemtoCell

• PicoCell

• CPE

• P1dB ~ 36dBm

• Gain : 35dB

• P1dB >30dBm

• OIP3 >47dBm

•Single Stage Gain

•(698-787)MHz

•LTE

MGA-43228/43328

MGA-43128

ALM-31122

•(2300-2500)MHz

•UMTS/TD LTE

Avago Technologies BTS PA Product Portfolio1-4W High Linearity PA

ALM-31222

ALM-31322

ALM-32120

ALM-32220

ALM-32320

• P1dB >33dBm

• OIP3 >50dBm

•Single Stage Gain

Avago Confidential


15

Wireless Infrastructure High Power PA RoadmapHigh Power & High Efficiency Fully Match PA Module For Major Cellular Freq Bands

MGA-43x285x5mm2 QFN29dBm LTE &

WiMAX PA

Dri

ver

Am

p

ALM-31x225x6x1.1mm3 MCOB

High Linearity 1W PA

201220102008

27dBm Linear PA (Band 1,2,5,8)5x5mm2 MCOB

18% Efficiency, 48dBc ACLR

ALM-32x207x10x1.1mm3 MCOB


4W Class A PATBD


Hig

h G

ain

H

igh

Po

wer

P

A M

od

ule

8-10W Driver Amp (Major Cellular Band)

TBD

High Gain, High

Efficiency, >53dBc ACLR

Avago Confidential


16

Released Products



MGA-631P8 & MGA-632P8 Active Bias LNA

Bottom View

Gro

und8

7

6

5

1

2

3

4

LPCC 2.0 x 2.0 x 0.75 mm

32.617.50.5354@ 4V0.4 - 1.5MGA-631P8

(dBm)(mA)(GHz)

OIP3CurrentFreq rangeProduct S11

(dB)

19.4

S22

(dB)

22.50.9

33.917.60.6257@ 4V1.4 – 3.8MGA-632P8 22.7 13.91.95

P1dB

(dBm)

18.0

19.2

NF

(dB)

Gain

(dB)(GHz)

Test range

Low Noise Amplifier

Pin1

Value Propositions

• Very Low NF

• 25dB typ. Input Return Loss, C1, L1 optimise match and NF

• Ideal for single ended designs

• Adjustable voltage supply 3V to 5V

• Adjustable current with Rbias 20-80mA

• 20dBm input power handling

•Gain control via feedback R1 and C3 values, 2-4dB gain

adjustment

•Cascode amplifier design, same die mounted vertically or

horizontally on ground pad

Target Applications:

• Low Noise Amplifier for cellular base stations (GSM, CDMA,

WCDMA, TD-SCDMA, CDMA2000, LTE, WiMAX, etc)


18

Bottom View

Gro

und

8

7

6

5

1

2

3

4

MoSLP 2.0 x 2.0 x 0.75 mm

37.018.00.3754 @ 5V0.4-1.5MGA-633P8

(dBm)(mA)(GHz)


(dB)

15.0

S22

(dB)

21.00.9

P1dB

(dBm)

22

NF

(dB)

Gain

(dB)(GHz)

Test range

Simplified Schematic

36.017.40.4448 @ 5V1.5-2.3MGA-634P8 15.5 13.01.9 21

35.918.00.5656 @ 5V2.3-4.0MGA-635P8 12.5 12.02.5 22

Avago Confidential

MGA-633P8, MGA-634P8 & MGA-635P8 Active Bias Ultra Low Noise Amplifier

Low Noise Amplifier

Value Propositions

• Ultra low noise figure

• High Linearity

• Broadband 0.4 – 4.0GHz

• Built-in active bias circuit

• Smart bias: Adjustable current and Linearity

• MGA-633P8 41dBm IP3 @ 70mA

• MGA-634P8 39dBm IP3 @ 56mA

• MGA-635P8 36dBm IP3 @56mA

• 20dBm Input power handling

• 15dB typ. Input Return Loss, C1, L1 optimise match and NF



WCDMA, TD-SCDMA, CDMA2000, LTE and WiMAX, etc.)



Part No. Freq range (MHz)

Test Freq (MHz)

Vd (V) Id (mA)

NF (dB)

Gain (dB)

OIP3 (dBm)

IRL (dB)

ORL (dB)

OP1dB (dBm)

S12 (dB)

Pkg

MGA-13516 400-1500 900 5 155 0.66 31.8 38 13 15 23.5 50 QFN 4x4mm

MGA-14516 1400-2700 1950 5 155 0.68 31.7 38 13 15 23.5 50 QFN 4x4mm

MGA-13516 & MGA-14516 2 stage High Gain & High Linearity LNA

RFin

RFout

Vd

match

Vbias

Active

bias

Active

bias

4x4x0.85mm 16 lead QFN

Value Propositions

• First and Second stage LNA in 4x4mm package

• <0.7dB NF

• Ideal for single ended designs

• First stage adjustable voltage supply 3V to 5V

• First and second stage adjustable current

• 20dBm input power handling

• First and Second stage Gain control via feedback

• Available connection for attenuator, filter or simple match

between stages for flexibility


• Low Noise Amplifier for cellular base stations (GSM,

CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE, WiMAX,

etc)

Low Noise Amplifier


20

MGA-16516 and MGA-17516 Dual Matched Low Noise FET

Key Value Propositions

• Low NF

• High Linearity

• Dual, matched pair LNA

• Excellent isolation

• For use as balanced amplifier design

• External active bias circuit required


• Low Noise Amplifier for cellular base stations (GSM,

CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE,

WiMAX, etc)

QFN 4.0 x 4.0 x 0.85 mm

Freq. Range Test Freq. Vdd Idq NF Gain OP1dB IIP3

Part Number (GHz) (GHz) (V) (mA) (dB) (dB) (dBm) (dBm) Package

MGA-16516 0.5-1.7 0.8 5 50 0.45 17.5 18 12.4 QFN 4x4x0.85mm

MAG-17516 1.7-2.7 1.85 5 50 0.52 17.2 21.5 16.2 QFN 4x4x0.85mm

Low Noise Amplifier


21

ATF-531P8, ATF-55143/M4, ATF-54143/M4 First Stage Low Noise

Amplifiers & and ATF-58143 High Linearity Low Noise

Enhancement Mode pHEMT FET

Part

Gate

Width

Application

Note Freq. V ds I ds NF G a OIP3 P 1 dB Package

Application

Note

Number (um) (MHz) (V) (mA) (dB) (dB) (dBm) (dBm)

ATF-531P8 1600 900 4 40 0.6 18.6 31 15 LPCC AN-1371

ATF-54143 800 2000 3 60 0.5 16.6 36.2 20 SOT-343 AN-1281

ATF-541M4 800 2000 3 60 0.5 17.5 35.8 21 MiniPak AN-1350

ATF-58143 800 900 3 30 0.55 20.6 33 15 SOT-343 AN-1375

ATF-55143 400 2000 2.7 10 0.6 17.7 24.2 14 SOT-343

ATF-551M4 400 2000 2.7 10 0.5 17.5 24.1 15 MiniPak


•0.5 / 0.6dB Typical Noise Figure

•High Linearity

•Positive voltage only

•No bias timing Circuit required

•Application Notes and Evaluation boards to cover all

popular frequencies

•80% market share in cellular infrastructure

•Active bias circuit required for high volume applications

•SOT-343 and MiniPak package options

Q1,

ATF-541M4 C4

LL1

Z0Z0

C1

R1

C3R5

LL2

R3

R4

Vdd= 5V

L1L2

C2

C5

R2

C6

Low Noise Amplifier


22

ATF-33143/M4, ATF-35143, ATF-34143 First Stage Low

Noise Amplifiers and Low Noise Depletion Mode pHEMT

FET ATF-38143

Part

Gate

Width

Application


Application

Note


ATF-33143 1600 900 4 80 0.5 17.4 33 20 SOT-343 AN-1195

ATF-33143 1600 1900 4 80 0.7 13.8 32.5 20 SOT-343 AN-1198

ATF-331M4 1600 1900 4 60 0.8 13.3 32 19 MiniPak AN-1288

ATF-34143 800 900 4 40 0.4 18.5 29 17.5 SOT-343 AN-1190

ATF-34143 800 1900 4 60 0.5 16 31 19 SOT-343 AN-1175

ATF-38143 800 1900 2 10 0.7 15.5 23 12 SOT-343 AN-1197

ATF-35143 400 1600/1900 2 10 0.9 15 20 11 SOT-343 AN-1174


•0.5 / 0.6dB Typical Noise Figure

•High Linearity

•Application Notes and Evaluation boards to cover all

popular frequencies

•80% market share in cellular infrastructure

•Active bias circuit required for high volume

applications

•SOT-343 and MiniPak package options

Low Noise Amplifier


23Page 23

Second and Third Stage ATF-5X1P8/89

Enhancement Mode FET Series

Part

Gate

Width

Application


Application

Note


ATF-50189 6400 1960 4.5 320 13.8 44.5 27 SOT-89 AN-5049

ATF-501P8 6400 1960 4.3 280 1.7 13.4 45.2 28.5 LPCC AN-5021

ATF-501P8 6400 900 4.3 280 1.9 17.4 44.5 27.4 LPCC AN-5025

ATF-501P8 6400 450 4.3 280 1.6 22.9 41.5 25 LPCC AN-5058

ATF-511P8 6400 1960 4.5 200 2.0 13.8 41.3 26 LPCC AN-1327

ATF-511P8 6400 900 4.5 200 3.1 18.4 41.2 25 LPCC AN-1373

ATF-521P8 3200 2140 4.5 200 1.6 16.5 41.2 24.8 LPCC Datasheet

ATF-521P8 3200 900 4.5 200 3.5 18.3 40 24.4 LPCC AN-1374

ATF-52189 3200 2000 4.7 225 1.6 16.9 40 27.5 SOT-89 AN-5245

ATF-531P8 1600 1960 4 135 1.2 18.6 35 24.3 LPCC AN-1320

ATF-531P8 1600 1960 4 135 3.0 14.8 40 22.3 LPCC AN-1320

ATF-531P8 1600 900 4 135 3.0 22.3 38 20.7 LPCC AN-1372


•High Linearity

•Positive voltage only

•No bias timing Circuit required

•Application Notes, White Papers and Evaluation boards to

cover all popular frequencies

•Active bias circuit required for high volume applications

•SOT-89 and LPCC 2x2mm package options

OGXOGXOGX

Low Noise Amplifier



MGA-53543 & MGA-53589High Linearity LNA/Driver Amp

High Linearity LNA / Driver Amp


• 1.5dB Noise Figure as Q2 LNA

• High linearity up to 39 dBm OIP3 at 5V, 54mA bias SOT-343

• High linearity up to 37 dBm OIP3 at 5V, 52mA bias SOT-89

• High power efficiency 28% at P1dB

• High reliability for base station application

• Suitable for 0.1 – 3.0GHz application

• Simple input match to optimize IP3

•SOT-343 and SOT-89 Industrial Standard Pb-free & MSL1

packages

SOT-89

52 Deg C / Watt

SOT-343163 Deg C / Watt

Simplified Circuit Schematic

Description Freq (MHz) NF (dB) Gain (dB)

OIP3

(dBm)

P1dB

(dBm) I/O RL Voltage (V)

Current

(mA)

Operating Range

(MHz)

MGA-53543900 1.3 17.4 39.7 19.3 >10.0 5.00 54 50-3000

1900 1.5 15.4 39.1 18.6 >10.0 5.00 54 50-3000

2400 1.9 15.1 38.7 18.1 >10.0 5.00 54 50-3000

MGA-53589900 1.24 18.2 36.8 18.6 >10.0 5.00 52 50-3000

1900 1.66 15.5 37.0 18.2 >10.0 5.00 52 50-3000

2400 1.64 15.3 37.2 17.6 >10.0 5.00 52 50-3000



MGA-6x563High Linearity Low Noise Smart-Bias DriverAmp

bias

inputmatch

1, 2, 5

6

4

3

Vd

IdsRbias

Ibias

Id = Ids + Ibias

Vbiasfeedback

bias

inputmatch

1, 2, 5

6

4

3

Vd

IdsRbias

Ibias

Id = Ids + Ibias

Vbiasfeedback

Figure 1 SmartFET Schematic Diagram

SOT-363

2 x 1.2 x 0.95 mm

General Purpose Amplifier

Features

• Single +3V and +5V supply

• Bias 5mA to 80mA with Rbias value

• High linearity

• Low noise figure

• SOT-363 Miniature package

• Input match optimizes NF performance

• Input can be matched for broadband

performance, white papers available for

100-1000MHz, 400-2700MHz

• Shutdown via Rbias control


OIP3

(dBm)

P1dB


Current

(mA)

Operating Range

(MHz)

MGA-62563500 0.8 22.0 35.0 18.0 >10.0 3.00 60 50-3000

1000 0.9 20.0 33.5 17.6 >10.0 3.00 60 50-3000

2000 1.2 15.5 33.0 17.7 >10.0 3.00 60 50-3000

MGA-61563500 1.1 20.0 30.0 15.5 >10.0 3.00 41 50-3000

1000 0.9 19.3 30.0 15.5 >10.0 3.00 41 50-3000

2000 1.0 15.5 32.0 15.1 >10.0 3.00 41 50-3000


26

MGA-81563 and MGA-82563 General Purpose Amplifiers


• Easy to use with minimal external matching

• Input pre-matched, Output 50 Ohm matched

• Single +ve supply voltage

• Integrated active bias circuitry

• Unconditionally stable

• MGA-81563 can be biased 2V to 5V

• MGA-82563 can be biased at 2V, 4V absolute maximum

• MGA-81563 achieves similar P-1dB performance to MGA-

82563 when biased at 5V, 54mA

SOT-363

2 x 1.2 x 0.95 mm

MGA-81563 / 82563 Simplified Circuit Schematic

General Purpose Amplifiers


OIP3

(dBm)

P1dB


Current

(mA)

Operating Range

(MHz)

MGA-81563500 3.1 12.5 15.1 >10.0 3.00 42 50-6000

1000 3.0 12.5 15.1 >10.0 3.00 42 50-6000

2000 2.7 12.3 27 14.8 >10.0 3.00 42 50-6000

MGA-82563500 2.3 14.7 3 17.4 >10.0 3.00 84 50-3000

1000 2.2 14.5 17.5 >10.0 3.00 84 50-3000

2000 2.2 14.5 30 17.3 >10.0 3.00 84 50-3000



MGA-8x563General Purpose Amplifiers

SOT-363

2 x 1.2 x 0.95 mm

(dBm)(dBm)(dB)(dB)(mA)(V)(GHz)Part Number

OIP3P1dBGainNFIdqVddFreq. Range

(GHz)

Test Freq.

+15.0+4.120.01.81450.1 – 6.0MGA-86563

+11.5+0.919.01.851530.8 – 6.0MGA-85563

2

2

+8.0-2.014.01.84.530.1 – 6.0MGA-87563 2

MGA-85563 Simplified Circuit Schematic

MGA-86563 / 87563 Simplified Circuit Schematic



• Easy to use with minimal external matching

• Input pre-matched, Output 50 Ohm matched

• Single +ve supply voltage

• Integrated active bias circuitry

• Unconditionally stabel



Value Propositions

250MHz to 3GHz operating freq

Industry’s standard SOT-89 package

Very high linearity, Low current

Pre-matched with simple matching

Stable performance across temperature

Freq

(GHz)

Vd

(V)

Idq

(mA)

P1dB

(dBm)

OIP3

(dBm)

Gain@

(dB)

S11

(dB)

S22

(dB)

NF

(dB)

0.9 5 100 23.5 40.5 16.5 -11.0 -12.0 3.0

1.9 5 100 23.3 39.7 13.0 -14.5 -14.5 3.2

2.5 5 100 23.0 39.7 12.0 -18.0 -12.0 3.5

MGA-304890.25W Driver Amplifier (250MHz to 3GHz)


SOT-89

High Linearity Gain Block



Value Propositions

Industry’s standard SOT-89 pkg

Very high and flat linearity across frequency

Flat gain across the frequency

Built in adjustable bias circuit

50Ohm matched input and output


MGA-30689, MGA-30789, MGA-30889 & MGA-30989Broadband High Linearity Gain Blocks


Part number FreqRange (GHz)

Test Freq (GHz)

Vd (V)

Idq (mA)

P1dB (dBm)

OIP3

(dBm)

Gain

(dB)

Gain Variation

(dB)

S11

(dB)

S22 (dB)

NF (dB)

Package (mm)

MGA-30689 0.04 - 2.5 2.0 5 100 22 40 14.0 0.5 -10 -10 3.0 SOT-89

MGA-30789 2.0 - 6.0 3.5 5 100 24 40 12.0 NA -10 -10 3.5 SOT-89

MGA-30889 0.04 - 2.5 2.0 5 65 19 36 15.0 0.5 -10 -10 3.0 SOT-89

MGA-30989 2.0 - 6.0 3.5 5 56 22 36 12.4 NA -20 -15 2.0 SOT-89

SOT-89




MGA-31189 & MGA-31289High Gain 0.25W Driver Amplifier

Value Propositions

250MHz to 2.7GHz operating freq


Very high linearity

High gain

0.1dB Flatness over 100MHz




Q2/3 LNA or Pre-driver Amplifier for cellular base

stations (GSM, CDMA, WCDMA, TD-SCDMA,

CDMA2000, LTE and WiMAX, etc)

Part number Freq Range (GHz)

Test Freq (GHz)

Vd (V)

Idq (mA)

P1dB (dBm)

OIP3

(dBm)

Gain

(dB)

S11

(dB)

S22 (dB)

NF (dB)

Package

MGA-31189 0.25 – 1.5 0.9 5 111 24.0 42.0 21.0 15.6 12.8 2.0 SOT-89

MGA-31289 1.5 – 3.0

1.9 5 124 23.6 41.8 18.7 16.2 10.3 2.0 SOT-89

2.5 5 124 23.7 41.5 17.7 15.5 10.8 2.0 SOT-89


SOT-89




Value Propositions

250MHz to 2.7GHz operating freq


High and consistent gain across major freq band


High linearity




Pre-driver Amplifier for cellular base stations (GSM,

CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE and

WiMAX, etc)


Test Freq (GHz)

Vd (V)

Idq (mA)

P1dB (dBm)

OIP3

(dBm)

Gain

(dB)

S11

(dB)

S22 (dB)

NF (dB)

Package

MGA-31389 0.25 – 1.5 0.9 5 73 22.2 38.6 21.3 30.5 14.7 2.0 SOT-89

MGA-31489 1.5 – 3.0

1.9 5 71 19.3 37.2 19.3 25.0 10.0 2.1 SOT-89

2.5 5 71 19.5 37.0 19.5 15.0 14.0 2.1 SOT-89



SOT-89





Value Propositions

450MHz to 3.0GHz operating freq (**narrow band

matching required)


Very high linearity

High gain








Test Freq (GHz)

Vd (V) Idq (mA) P1dB (dBm)

OIP3

(dBm)

Gain

(dB)

S11

(dB)

S22 (dB)

NF (dB)

Package

MGA-31589 0.45 – 1.5 0.7 5 146 27.2 45.3 20.4 12.1 10.0 1.9 SOT-89

MGA-31689 1.5 – 3.0 1.9 5 168 27.6 44.9 18.1 11.5 10.0 1.9 SOT-89

1900MHz Matching Circuitry




Key value propositions

• High linearity (24-29dBm) and great power handling (13-

16dBm)

• Flat, broadband frequency response up to 2GHz

• High & Low gain option

• Internal 50 ohm match

•High ESD Protection (HBM>1KV)

• Low current consumption

• Industrial Standard MSL 1 package


• IF Amplifier for Basestation radiocards

• Gain Block for various wireless system

SOT-363

2 x 1.2 x 0.95 mm

InGaP HBT Gain Block Amplifier-SC 70 Package


OIP3

(dBm)

P1dB

(dBm) I/O RL

Voltage

(V)

Current

(mA)

Operating Range

(MHz)

AVT-53663

100 3.50 22.4 29.8 16.0 >15.0 4.0 48 DC-6000

1000 3.50 21.5 29.3 16.2 >15.0 4.0 48 DC-6000

2000 3.50 20.0 27.0 14.6 >15.0 4.0 48 DC-6000

AVT-52663

100 3.70 16.2 30.4 15.8 >15.0 4.0 45 DC-6000

1000 3.80 16.0 29.5 15.7 >15.0 4.0 45 DC-6000

2000 4.30 15.6 27.4 15.1 >15.0 4.0 45 DC-6000

AVT-51663

100 3.50 21.3 26.3 13.5 >15.0 4.0 39 DC-6000

1000 3.50 20.8 27.0 14.0 >15.0 4.0 39 DC-6000

2000 3.50 19.5 25.3 12.3 >15.0 4.0 39 DC-6000

AVT-50663

100 3.40 16.0 27.0 13.3 >15.0 4.0 36 DC-6000

1000 3.50 15.7 26.5 13.1 >15.0 4.0 36 DC-6000

2000 3.80 15.5 25.3 12.8 >15.0 4.0 36 DC-6000




AVT-55689 & AVT-54689InGaP HBT Gain Block Amplifier In SOT-89


• High linearity (30-35dBm) and great power handling (17-

19dBm)



• High ESD Protection (HBM>1KV)

• Built in active bias eliminating external biasing resistor

• Low current consumption

• SOT-89 MSL 1 package



• Gain Block for various wireless system

SOT-89

4.5x2.5x1.5mm

Demoboard/Samples Availability: Now!!!

Description Freq (MHz) NF (dB) Gain (dB) OIP3 (dBm)

P1dB


Current

(mA)

Operating Range

(MHz)

AVT-55689

100 4.10 18.9 36.0 19.6 >10.0 5.00 83 50-6000

1000 4.10 18.4 34.5 19.6 >10.0 5.00 83 50-6000

2000 4.50 17.0 33.0 19.0 >10.0 5.00 83 50-6000

AVT-54689100 3.95 19.3 34.0 19.0 >10.0 5.00 64 50-6000

1000 4.00 18.7 32.6 19.0 >10.0 5.00 64 50-6000

2000 4.30 17.40 30.0 17.0 >10.0 5.00 64 50-6000




ABA-3x563 & 5x563 Broadband Silicon RFIC Amplifiers

SOT-363

2 x 1.2 x 0.95 mm

Description ABA-51563 ABA-52563 ABA-53563 ABA-54563 ABA-31563 ABA-32563

Freq (MHz) 100 1000 2000 100 1000 2000 100 1000 2000 100 1000 2000 100 1000 2000 100 1000 2000

NF (dB) 3.2 3.4 3.6 2.5 2.8 3.3 2.8 3.1 3.3 3.5 4.2 4.2 3.5 3.8 4.0 2.6 3.1 3.3

Gain (dB) 20.5 21 21.5 21.8 21.8 21.5 22 22 22 23 23.5 23 21.5 21.5 21 21.5 21.5 19

OIP3 (dBm) 14 14 12 30 26 20 28 27 23 36 34 28 17 15 13 27 23 19

P1dB (dBm) 4 4 2 13 12 10 15 14 13 18 18 17 4 3 2 12 10 8

I/O RL >15.0 >15.0

Voltage (V) 5 5 5 5 3 3

Current (mA) 18 35 46 79 14 37

Operating

Range (MHz) DC-2500 DC-2500 DC-2500 DC-2500 DC-2500 DC-2500


• DC-2.5GHz flat frequency response

• High Linearity below 500MHz

• 20-22dB high fixed gain

• Higher reverse isolation <40dB

• 50 ohm matched input and output


• Voltage Biased, 3V and 5V options

Target Applications:• IF Amplifier for Basestation radiocards

• IF Amplifier for DVB-S LNB




ADA-4x43 Silicon Bipolar Darlington Amplifiers

Description ADA-4543 ADA-4643 ADA-4743 ADA-4789

Freq (MHz) 100 1000 2000 100 1000 2000 100 1000 2000 100 1000 2000

NF (dB) 3.6 3.7 4.1 3.9 4.0 4.3 4.1 4.2 4.2 4.1 4.2 4.4

Gain (dB) 15.7 15.1 14.0 17.5 17.0 14.0 16.6 16.5 15.5 16.9 16.5 16.2

OIP3 (dBm) 14.6 15.0 14.0 29.0 28.3 24.0 33.4 32.6 28.0 33.4 33.2 28.8

P1dB (dBm) 2.5 1.9 2.0 14.7 13.4 11.5 17.7 17.1 16.2 17.7 17.1 15.5

0/P RL (dB) >15 >15 >15 >15

Current (mA) 15 35 60 60

Operating

Range (MHz) DC-2500 DC-2500 DC-2500 DC-2500


• High linearity (15-33dBm) @ 0.9GHz

• High linearity (15-36dBm) @ 0.1GHz



• Flexible current biased devices



• IF Amplifier for DVB-S LNB

• CATV drop line amplifier

ADA-4743 ADA-4789

SOT-89

52 Deg C / Watt

SOT-343

163 Deg C / Watt




MGA-565P8High Isolation Buffer Amplifier

Psat

MixerVCO ~ 0dBm


• Adjustable Psat between +9dBm to 20dBm via

external Rbias

• Broadband 100MHz to 3GHz application as LO

Buffer Amp

• High gain up to 22dB

Buffer-High Power Amplifier

Operating at 2GHz, Pin=0dBm

>42 dB21 mA+7 dBm73180 Ohm

>42 dB25 mA+10 dBm103130 Ohm

>42 dB40 mA+13 dBm135150 Ohm

>42 dB55 mA+17 dBm17560 Ohm

IsolationIdsLO DriveMixer LevelVd (V)Rbias

LPCC 2x2mm



Value Propositions

Very high linearity


Adjustable current from 100 to 200mA (OIP3 will change)

Pre-matched with easy matching



Test Freq (GHz)

Vd (V) Idq (mA)

P1dB (dBm)

PAE @ P1dB

OIP3 (dBm)

Gain@

(dB)

S11

(dB)

S22 (dB)

NF (dB)

Package (mm)

MGA-30116 0.7- 1.0 0.9 5 203 27.7 47% 44.1 17 -14 -14 2.7 QFN 3x3mm

MGA-30216 1.7-2.7 2.0 5 206 29.0 49% 45.3 14 -19 -22 2.8 QFN 3x3mm

MGA-30316 3.3-3.9 3.5 5 198 28.5 51% 44.4 12.8 -10 -8.5 2.7 QFN 3x3mm

Basestation 0.5W Driver Amplifiers

QFN 3.0 x 3.0 x 0.85 mm

Demo board Schematic

Driver Amplifier



Value Propositions

Very high linearity


Fully matched for easy to use



Test Freq (GHz)

Vd (V) Idq (mA)

P1dB (dBm)

PAE @ P1dB

OIP3 (dBm)

Gain@

(dB)

S11 (dB) S22

(dB)

NF (dB)

Package (mm)

ALM-31122 0.7-1.0 0.9 5 394 31.6 52% 47.6 15.6 -14 -11 2 MCOB 5x6 mm

ALM-31222 1.7-2.7 2.0 5 410 31.5 52% 47.9 14.9 -10 -10 2.7 MCOB 5x6 mm

ALM-31322 3.3-3.9 3.5 5 413 31 51% 47.7 13.2 -10 -10 2.8 MCOB 5x6 mm

Basestation 1W Driver Amplifiers

MCOB 5x6x1.1mm


Driver Amplifier



Value Propositions

Very high linearity


Fully matched for easy to use



Test Freq (GHz)

Vd (V) Idq (mA)

P1dB (dBm)

PAE @ P1dB

OIP3 (dBm)

Gain

(dB)

S11 (dB) S22

(dB)

NF (dB)

Package (mm)

ALM-32120 0.7-1.0 0.9 5 800 34.4 50.3% 52 14.3 -26 -10 2.5 MCOB7x10

ALM-32220 1.7-2.7 2.0 5 800 34.4 47.5% 50 14.8 -9 -9 3.5 MCOB7x10

ALM-32320 3.3-3.9 3.5 5 810 34.5 46.6% 51 12.6 -9 -12 2.5 MCOB7x10

Basestation 2W Driver Amplifiers

Vdd

Vdd2

VcontrolVsense

Vsense2


Demo board

Driver Amplifier



Value Propositions

Low operating voltage (3.3V or 5V)

Low current, high efficiency

Integrated switch control attenuator

Integrated shutdown and power detector

Fully matched RF Input and output

WiMAX Linear Power Amplifier

Note 1: Linear Output power measured at 64QAM OFDMA modulation per IEEE 802.16e specs

Part number ALM-42216 ALM-42316Freq range (GHz) 2.3-2.7 3.3-3.8Test freq (GHz) 2.5 3.5Vdd (V) 3.3 3.3Idd (mA) 420 417Idq (mA) 240 240Pout (dBm) 23.5 23Pout (dBm) @ 5V 26 25EVM (%) 2.5% 2.5%PAE (%) 16% 16%Gain (dB) 32 302nd Harmonic (dBc) 45 45Atte. (dB) 18 18Package (mm) 5x5x1.1 5x5x1.1P1dB (dBm) 30.5 30.5Matching Full FullTarget Release Released Released Functional block diagram

MCOB 16-pin 5 x 5 x 1.1 mm

WiMAX Amplifier



Value Propositions 5V operation

High efficiency

29dBm Linear Pout



Partial output match enable optimum narrow

band performance with different external matching

Note 1: Linear Output power measured at 64QAM OFDMA modulation per IEEE 802.16e specs

* Input fully-matched and output partial matched

2.3-2.7GHz 29dBm OFDMA Linear Power AmplifierDemoboard/Samples Availability: Now!!!

Part number MGA-43228 MGA-43328

Freq range (GHz) 2.3-2.5 2.5-2.7

Vdd (V) 5 5

Idd (mA) @ Plin 1023 1017

Idq (mA) 515 470

Pout (dBm)*note 1 29.1 29.3

EVM (%) 2.50% 2.50%

PAE (%) 15.70% 16.60%

Gain (dB) 38.5 37.4

Det Range (dB) 20 20

Atte. (dB) 23.8 24.5

Package (mm) 5x5x0.85 5x5x0.85

P1dB (dBm) 36 36

Matching Partial* Partial*

5.0x5.0mm QFN

WiMAX/LTE Amplifier



Value Propositions

• 4 Pin Diodes in SOT 25 industrial standard package

(2.9 x 1.6 x 1.0mm)

• Broad band application from 300KHz – 3GHz

• Voltage Controlled Attenuator

• High Input IP3

• High Attenuation Range

• Low Insertion Loss

Target Applications

Attenuator for Cellular Base Station, CATV, VSAT

HSMP-3816 & HSMP-3866 Quad Pin Diode Attenuator

36 dB36.5dBAttn Range, 0V<Vc<+5V

38dB

22dB

45 dBm

3.5 dB

HSMP-3816

30 dBm Input IP3

18dBReturn Loss

NAAttn Range, +1V<Vc<+15V

2.5 dB

HSMP-3866

Insertion Loss

Typical Parameters at 1GHz

SOT-25 Package

2.9 x 1.6 x 1.0mm

Voltage Controlled Attenuator


44

3.8x3.8 MCOB

Avago ALM-38140

Key Value Proposition Broad band application from 50MHz – 4GHz

Current Controlled Attenuator, 1-5 Vctrl, 0-20mA

High Input IP3 & P1dB

High Attenuation Range

Phase Shift minimised with external inductor

Low Insertion Loss

Built in matching and biasing network

Reduced board space

Molded Chip On Board (MCOB) package

Target Applications:Cellular Base Station, CATV, VSAT

ALM-38140Diode Based Pie Attenuator Module

Freq

(MHz)

IIP3

(dBm)

IP1dB

(dBm)

Dynamic

Range

(dB)

Phase

shift

(deg)

Max

Attn

(dB)

IL (dB) Input RL

(dB)

Output

RL (dB)

Current

(mA) @ 5V

50 50.0 28.0 41.1 40.7 43.7 2.62 -17.4 -17.4

20.5

500 50.0 28.8 38.1 40.5 40.8 2.72 -18.1 -18.0

1000 51.9 29.7 35.7 68.8 38.5 2.84 -19.8 -19.6

2000 51.7 31.2 30.3 105.2 33.4 3.14 -14.3 -13.5

2500 52.1 31.3 27.7 117.9 31.0 3.28 -14.3 -13.1

3500 51.8 32.7 22.5 138.1 26.3 3.78 -14.4 -12.0

Voltage Controlled Attenuator

Parasitic Effect

Cancellation


45

ALM-80110 (0.4-1.6GHz) & ALM-80210 (1.6-2.7GHz)Broadband 0.25W Variable Gain Amplifiers

Key Value propositions

• Best in class dynamic range (>30dB)

• High linearity up to 39.5 dBm OIP3

• Low phase shift (<15deg with external inductor)

• Broad band application

• 50Ohm input matched and output pre-match

• Molded Chip On Board (MCOB) packageTarget Applications:

• AGC or Temperature Compensation Circuitry

5.0x5.0mm MCOBAvago ALM-xxxxx

Part Number Freq

(MHz)

OIP3

(dBm)

P1dB

(dBm)

Dynamic

Range

(dB)

Gain

(dB)

NF

(dB)

IRL

(dB)

ORL

(dB)

PAE

(%)

Control

Voltage

(V)

Current

(mA)

ALM-80110 900 40.0 23.2 40.0 13.5 4.8 17.0 12.0 41.0

1-5V 110ALM-80210 1900 39.5 23.5 33.0 9.8 4.8 13.5 10.5 37.0

Current Controlled VGA



High Power Handling PIN Diode – HSMP-386J


• High power handling > 40dBm.

• High power dissipation using power package.

• Low Insertion loss.



• Wireless system requiring high power

transmit/receive switching

QFN 2x2mm

Typical Series

Resistance

Typical Breakdown

Voltage

Typical Forward

Voltage

Typical Total

Capacitance

RS (Ω) VBR (V) Vf (V) CT (pF)

0.65 120 0.8 0.75

Test ConditionsIF = 50 mA VR = VBR IF = 50mA

VR = 50V

f = 100 MHz Measure IR ≤ 5uA f = 1MHz

PIN Diode Switch



Note:

§ Vc1 = 5V,Vc2 = 0V, Ic1 ~ 50mA during Tx mode.

§ Vc1 = 0V, Vc2=5V, Ic2 ~- 50mA during Rx mode.

**Design concept and specification might change upon market release

ALM-40220TD-SCDMA & TD LTE 10W High Power SPDT Switch

Vctrl 1

Ant

Tx

Rx

Vctrl 2

5.0x5.0mm MCOBAvago ALM-40220

Parameter Unit Min Typ Max

Freq MHz

TX-ANT Insertion Loss dB 0.45

RX-ANT Insertion Loss dB 0.5 0.6

TX Return Loss dB 25

Ant Return Loss (Tx Mode) dB

RX Return Loss dB 25

Ant Return Loss (Rx Mode) dB

TX-RX ISO (Tx Mode) dB 35 40

Ant-RX ISO (Tx Mode) dB 35 40

RX-TX ISO (Rx Mode) dB 26

Ant-TX ISO (Rx Mode) dB 17

TX Input P0.1dB dBm 40

TX-Ant IIP3 * dBm 60

RX Input P0.1dB dBm 18

RX Input P1dB dBm 22

ANT-RX IIP3 dBm 31

EVM (with system EVM removed) % 1

Tx RF Switching Speed

(10% -90% RF voltage)

Tx Turn-on Stage

F=2.010GHz

1MHz Rep Rate in Modulating Mode

uS 1

2010-2025

No Spec

No Spec

PIN Diode Switch



PA

Circulator

LNA

Ant

TX

Vc1Va Vc2

RX

TX

Vc1Va

RX

Ant

50ohm

Vc2

50ohm

CL

Chini

Chini

PALNA

• Tx and Rx arm internally connected to Vc2 pad.

• Tx on, Rx off, Rx will switch to external 50ohm termination.

• Rx on, Tx off, Tx will switch to external 50ohm termination.

• During Tx mode, Ant pin connected to Tx pin to

absorb any reflected signal from Ant by 50ohm

termination.

• During Rx mode, Ant pin connected to Rx pin.

LNA Protection Switch

ANT Switch

External 50ohm Termination Suggestion


49

Value Proposition

• Unique 4 PIN Diode Diversity Switch

Configuration

• High Linearity

• Great Power Handling

• Low IL and High ISO

• Design Simplicity And Board Space Saving

With Semi Integrated Solution

•

Applications:

Cellular Infrastructure, DECT Phone, Wireless

LNA, WiMAX

HSMP-386D/389D PIN Diode Diversity Switch

HSMP-389DHSMP-386D

SOT-143 Package

3.0 x 1.3 x 1.0 mm

Typical Parameters at

900MHzHSMP-386D HSMP-389D

Insertion Loss 0.35 dB 0.36 dB

Return Loss 27 dBm 28 dBm

Isolation 25.4 dB 24.7 dB

Input IP3 56.8 dBm 55.4 dBm

Input P1dB 47.4 dBm 46.3 dBm

PIN Diode Switch


50

Value Proposition

• Unique combination of PIN and Schottky Diode

•Schottky diode rectifies the RF and biases the PIN

diode on at lower input drive level

• Low Limiting Threshold Power

• Low IL

•IL can be minimised with external inductor resonating

out parasitic capacitance. 0.4dB At 2.4GHz.

• Design Simplicity And Board Space Saving With Semi

Integrated Solution

Applications:

Cellular Infrastructure , WiMAX, LTE, Receiver System, RFID

front end protection

Typical Parameters

at 900MHz

ASML-

5822

ASML-

5829

Insertion Loss 0.85dB 0.33dB

Return Loss 10.9dB 15.6dB

Output P1dB 2.85dBm 6.05dBm

ASML-5822/5829 Schottky Assisted Low Power

Limiter

ASML-5829ASML-5822

SOT-323 Package

2.0 x 1.2 x 0.95 mm

-80

-70

-60

-50

-40

-30

-20

-10

0

10

20

-10 -5 0 5 10 15 20 25

Pin (dBm)

Po

ut (

dB

m)

fundamental

seco nd harmo nic

CSCH

CPIN

LEXT

ASML

5822

Low Power Limiter




• High linearity

• Low LO power

• Differential RF/LO inputs and differential or single ended IF

outputs

Target Applications

• Down Converter for cellular base stations (GSM, CDMA,


IAM-92516 High Linearity Mixer

Mixer

LPCC

3x3mm279-6.012.52650.4-3.5

IAM-

92516

(dBm)(dBm)(dB)(dB)(mA)(V)(GHz)

PackageIIP3P1dBGainNFIdqVdd

Freq

Range

Part

number

IAM-92516

LPCC

3x3x0.85mm


52

Under Development



Legend

Project Status

In development

Planned development

Concept

Product released and available for purchase

Fully defined project actively being developed; samples

may be available

Partially defined project, resources not yet allocated

Possible future project (continues family or proposed custom)

Description

Released

New Product Roadmap


54

2010 2011 2012 2013

Infrastructure Product Roadmap – LNAs

MGA-633P8

900 MHz Active Bias LNA, QFN 2x2mm

MGA-634P8

2 GHz Active Bias LNA, QFN 2x2

Next Generation Balanced Active Bias LNA,

QFN 4x4mm (3 Products)%

MGA-635P8

2.5 GHz Active Bias LNA, QFN 2x2

MGA-636P8

900 MHz Low NF High Linearity LNA, QFN 2x2mm

MGA-637P8

2 GHz Low NF High Linearity LNA, QFN 2x2mm

MGA-638P8

2.5 GHz Low NF High Linearity LNA, QFN 2x2mm

Rapala w2

Rapala w3

Rapala w1

Nebula 1

Nebula 2

Nebula 3

In development

Planned development

Concept

ReleasedMGA-683P8/684P8

Low Cost LNA QFN 2x2mm

Balance LNA

Low Cos LNA

Sin

gle

En

ded

1stS

tag

e L

NA

Bal

ance

1st

Sta

ge

LN

A

2GHz High Gain 2 Stage Amp, QFN

4x4mm

Mangrove 1

900MHHz High Gain 2 Stage Amp,

QFN 4x4mm

Mangrove 2

2.5GHz High Gain 2 Stage Amp, QFN

4x4mm

Mangrove 3

Next Generation Dual Stage LNA

QFN TBD (3 Products)

TBD

2nd

or

3rd

Sta

ge

LN

A

Du

al S

tag

e

Sta

ge

LN

A

Next Generation High IP3 LNA

QFN 2x2mm (3 Products)

TBD


55

Infrastructure Product Roadmap – LNA Module & Low Voltage LNA

ALM-11036/11136

900MHz TMA Bypass LNA, MCOB 7x10mm

Ketapang1

ALM-11236/11336

2GHz TMA Bypass LNA, MCOB 7x10mm

1.9-2.2GHz TD-SCDMA/LTE LNA + High Power SPDT

Switch Module, MCOB 8x8mm

2.3-2.4GHz TD-SCDMA/LTE LNA + High Power SPDT

Switch Module, MCOB 8x8mm

Ketapang2

Sago1

Sago2

MGA-64506/65506

3.3V Bypass LNA with Shutdown, QFN 2x1.3mm

Mimosa

TM

A B

ypas

s L

NA

Sw

itch

+ L

NA

Lo

w C

urr

ent

LN

A

+ B

ypas

s

3.3V 0.4-1GHz Bypass LNA

QFN 2x1.3mm

2010 2011 2012 2013

In development

Planned development

Concept

Released

TBD


56

Infrastructure Product Roadmap – Drivers and VGAs

2GHz High Gain VGA

MCOB 6x6mm

In development

Planned development

Concept

Released

MGA-43128

700 MHz LTE 5V Driver, QFN 5x5mm

Heron

Road Runner2

2.1 GHz Linear PA (Picocell & Femtocell)

<-48dBc @28dBm@, MCOB 5x5mm

1.9 GHz Linear PA (Picocell & Femtocell)


800MHz Linear PA (Picocell & Femtocell)


Flamingo 2.1

Flamingo 0.8

Flamingo 1.9

Dri

ver

Am

plif

iers

V

GA

2010 2011 2012 2013

2.3-2.5 GHz Linear PA (Picocell & Femtocell)


Flamingo 2.4



Flamingo 2.6



Flamingo 0.7


57

Infrastructure Product Roadmap: Gain Blocks

MGA-31389/31489

High Gain 37dBm Gain Block (0.4-3GHz)

AVT-54689 AVT-55689

HBT Gain Block Hi-OIP3 G:17dB

MGA-31589/31689

High Gain 0.5W Gain Block

MGA-31189/31289

High Gain 40dBm Gain Block (0.4-3GHz)

Jati

Pinang

AngsanaPlus

Rajah Brooke

MGA-31789/31889

High LFOM 0.1W Gain Block

Zazu0.1

W

0.25

W

0.5

W<

0.1

W

2010 2011 2012 2013

In development

Planned development

Concept

Released

3-6GHz High LFOM 0.25W Gain Block

QFN, TBD (16dB Gain)

TBD



TBD



TBD



TBD



MGA-636P8, MGA-637P8 & MGA-638P8BTS Low NF High Linearity LNA

Value Propositions

Industry’s standard QFN 2mmx2mm package

Very high linearity

Low NF

High & consistent gain across frequency

Built in Shutdown Function






Bottom View

Gro

und

8

7

6

5

1

2

3

4

MoSLP 2.0 x 2.0 x 0.75 mm


Released!!!

L1

L2

C3

C1 C2

C4

R1

RFin RFout

Vdd

[2]

[1]

[3]

[4]

[7]

[8]

[6]

[5]

C6

RbiasC5

C7 C8

Vbias2 Power Down

Bias

Part number Freq Range

(GHz)

Test Freq

(GHz)

Vd

(V)

Idq

(mA)

NF

(dB)

Gain

(dB)

IIP3

(dBm)

S11

(dB)

S22

(dB)

MGA-636P8 0.45 – 1.5 0.7 4.8 114 0.5 17.9 25.0 10.0 17.0

MGA-637P8 1.5 – 2.5 1.7 4.8 90 0.70 16.8 24.0 20.0 9.0

MGA-638P8 2.5 – 4.0 2.6 4.8 70 0.81 15.5 24.5 13.0 7.0



Value Propositions

• Ultra low noise figure

• Broadband 0.4 – 4.0GHz

• Built active bias circuit

• Smart bias: Adjustable current



• Low Noise Amplifier for Cellular Repeater

Bottom View

Gro

und

8

7

6

5

1

2

3

4

MoSLP 2.0 x 2.0 x 0.75 mm

34.717.60.6045 @ 5V0.4-1.5MGA-683P8

(dBm)(mA)(GHz)


(dB)

21.0

S22

(dB)

13.00.9

P1dB

(dBm)

21.9

NF

(dB)

Gain

(dB)(GHz)

Test range


31.017.10.7834 @ 5V1.5-4.0MGA-684P8 19.0 12.51.9 21.3

MGA-683P8 & MGA-684P8LNA For Cellular Repeater

Released!!!



ALM-11036, ALM-11136, ALM-11236 & ALM-11336TMA LNA Module With Fail-Safe Bypass

Target Release : April’11Sample Availability: Now!!!

7.0x10.0mm

x1.2mm

MCOB

TMA System Block Diagram

Module

Avago

ALM-xxxxx


• Very Low Noise Figure

• Low loss fail safe by-pass mode

• High Gain and linearity

• PIN Diode high linearity switch

• Simplify application CircuitryTarget Applications:

• Tower Mounted Amplifier (TMA)Parameter ALM-11036 ALM-11136 ALM-11236 ALM-11336

Frequency 776_850 MHz 870_915 MHz 1710_1850

MHz

1850_1980

MHz

Test Freq 849 MHz 900 MHz 1780 MHz 1980 MHz

Gain 15.6 dB 15.4 dB 15.9 dB 15.3 dB

S11 >18 dB >18 dB >18 dB >18 dB

S22 >18 dB >18 dB >18 dB >18 dB

Noise Figure 0.78 dB @ 25C 0.76 dB @ 25C 0.85dB @ 25C 0.88dB @ 25C

IIP3 21.3 dBm 22.0 dBm 17.3 dBm 17.9 dBm

IP1dB 4.0 dBm 4.6 dBm 3.5 dBm 3.8 dBm

Bypass Insertion Loss 0.82 dB 0.85 dB 0.75 dB 0.78 dB

Bypass S11 >18 dB >18 dB >18 dB >18 dB

Bypass S22 >18 dB >18 dB >18 dB >18 dB

Switch Isolation (LNA On) >50 dB >50 dB >50 dB >50 dB

Supply Voltage 5V 5 V 5V 5 V

Supply Current 92 mA 92 mA 99 mA 100 mA

Released!!!


61

ALM-12124 & ALM-12224TD-SCDMA/LTE High Power Switch-LNA Module

Under Development


62

ALM-12124 & ALM-12224TD-SCDMA/LTE High Power Switch-LNA Module

8.0 mm x 8.0mm x 1.2mm

Rx Mode (Ant to Rx Out)

Parameter Unit

ALM-12124 ALM-12224

Freq MHz 1880-2025 2300-2400

Test Freq MHz 2018 2400

Supply Voltage (Vbias, Vdd1, Vdd2) V 5 5

Control voltage (Vctrl1, Vctrl2) V 0, 28 0, 28

Total current mA 225 229

NF dB 0.85 0.99

Gain dB 39.2 36.7

OIP3 (*Pin = -25dBm) dBm 36.5 38.7

OP1dB dBm 23.6 22.8

Sw itching (Tx/Rx mode) nS <1us <1us

Ant Return loss dB -15.6 -16.2

Isolation (LNA1 output - LNA2 input) dB 51.2 54.4

LNA1 output return loss dB -18.0 -25.4

LNA2 input return loss dB -20.1 -22.6

Tx Mode (Ant to Tx)

Parameter Unit ALM-12124 ALM-12224

Tx-Ant Insertion loss dB 0.30 0.37

Max input pow er (CW, 5mins testing) dBm 47.5 47.5

Isolation (ANT-LNA1 input) dB 51.5 41.2

Ant Return loss dB -20.7 -20.0

Spec

Avago Confidential

Released!!!



MGA-13116, MGA-13216 & MGA-133162-Stage High Gain & High Linearity LNA

Value Propositions

Integration of Q1 & Q2 LNA in single package

Very high linearity at low current

High Gain

Superior Q1-Q2 Isolation

Broad operating frequency range

Pre-matched for ease of useTarget Applications:



Released!

Part No. Freq Range (MHz)

Test Freq (MHz)

Vd (V)

Id (mA)

NF (dB)

Gain (dB)

OIP3 (dBm)

IRL (dB)

ORL (dB)

OP1dB (dBm)

Q1-Q2 ISO (dB)

MGA-13116 400-1500 900 5 166 0.54 38.0 42.0 18.0 12.0 23.4 51

MGA-13216 1500-2500 1950 5 175 0.68 35.9 40.5 15.3 10.3 23.3 46

MGA-13316 2500-4000 2500 5 193 0.70 34.0 41.0 NA NA 23.0 50


64

* Demoboard losses are deembedded.

** VLOW : < 0.8V, VHIGH : > 1.8V

MGA-16116, MGA-16216 & MGA-16316Ultra Low NF Balance LNA MMIC With Shutdown Feature

4 mm

4 mm

16-lead QFN, ( 4x4 )mm


• Ultra Low NF

• High Linearity

• Dual, matched pair LNA

• Excellent isolation

• Built-in active bias & Power Down circuitry

•Industry standard QFN 4x4 package

Released!

Part number Freq Range

(GHz)

Test Freq

(GHz)

Vd

(V)

Idq

(mA)

NF

(dB)

Gain

(dB)

IIP3

(dBm)

S11 (dB) Vshutdown**

MGA-16116 0.45 – 1.5 0.9 4.8 60.9 0.27* 18.4 19.1 -10.9 Active Low

MGA-16216 1.44 – 2.35 1.95 4.8 52.5 0.32* 18.4 17.1 -9.0 Active Low

MGA-16316 2.3 – 4.0 2.6 4.8 53.3 0.45* 18.2 15.5 -12.7 Active Low


65

MGA-31716 & MGA-31816High Linearity / Low Current 0.1W Driver Amplifier

Value Propositions

DC to 4.0GHz operating freq

Industry’s standard QFN 3mmx3mm package

High and consistent gain across major freq band

High linearity / Low current (Figure of Merit)

50 ohm matching



Pre-driver Amplifier for cellular base stations (GSM,

CDMA, WCDMA, TD-SCDMA, CDMA2000, LTE and

WiMAX, etc)

Released!

Part number

Freq Range (GHz)

Test Freq (GHz)

Vd (V)

Idq (mA)

P1dB (dBm)

OIP3 (dBm)

Gain (dB)

S11 (dB)

S22 (dB)

NF (dB)

MGA-31716 DC – 1.5 0.9 5 49 21.2 39.0 20.1 15.2 16.5 1.6

MGA-31816 1.5 – 4.0 1.9 5 50 19.8 39.5 19.5 15.8 10.3 1.6

Can be used to trade-off

Linearity with OP1dB



MGA-43128700MHz 29dBm OFDMA Linear Power Amplifier

**Design concept and specification might change upon market release

Value Propositions 5V operation

High efficiency

29dBm Linear Pout



Optimize for band 12/13 downlink

Input fully match

Partial output match enable optimum narrow

band performance with different external matching

* Input fully-matched and output partial matched

Part number MGA-43128Freq range (GHz) 728-756Vdd (V) 5Idd (mA) @ Plin 780Idq (mA) 380Pout (dBm) 29.2EVM (%) 2.5%PAE (%) 24%Gain (dB) 33.4Det Range (dB) 15Atte. (dB) 18Package (mm) 5x5x0.85P1dB (dBm) 36Matching Partial*

5.0x5.0mm QFN

MGA-43128

Released!


67

Value Propositions 5V operation, operable up to 5.5V for Higher Pout

High efficiency

High Linear Pout

Input & Output Fully Matched


Power Amplifier For In Door Small Cell

5.0x5.0mm

MCOB

1 Test Tone #1, 64 DPCH, +/- 5 MHz offset

Avago Confidential

Parameters MGA-43428 MGA-43528 MGA-43628

Freq range (GHz) 0.86-0.90 1.93-1.995 2.0-2.2

Vdd (V) 5 5 5

Idq (mA) 350 400 440

Pout (dBm) @50dBc ACLR *1 27.2 27.2 27.2

PAE (%) 14.9% 13.6% 14.0%

Gain (dB) 33.7 41.9 41.5

Det Range (dB) 20 20 20

Package (mm) 5x5x1.1 5x5x1.1 5x5x1.1

P1dB (dBm) 37.2 37.2 36.8

Matching Fully Matched Fully Matched Fully Matched

Released!


68

Value Propositions 5V operation, operable up to 5.5V for Higher Pout

High efficiency

High Linear Pout

Input & Output Fully Matched


Power Amplifier For In Door Small Cell

5.0x5.0mm

MCOB

1 Test Tone #1, 64 DPCH, +/- 5 MHz offset

Avago Confidential

Parameters MGA-43728 MGA-43828 MGA-43013

Freq range (GHz) 2.62-2.69 0.88-0.97 Band 13

Vdd (V) 5 5 5

Idq (mA) 400 400 400

Pout (dBm) @50dBc ACLR *1 27.0

Pout (dBm) @48dBc ACLR *2 27.0 27.0

PAE (%) 14.0% 15.0% 15.0%

Gain (dB) 41.0 34.0 34.0

Det Range (dB) 20 20 20

Package (mm) 5x5x1.1 5x5x1.1 5x5x1.1

P1dB (dBm) 37.0 37.0 37.0

Matching Fully Matched Fully Matched Fully Matched

Under Development

2 E-UTRA Test Model 1.1 10MHz 50RB

MGA-43728, 43828Target Release – March’13Sample Availability: Nov’12

MGA-43013Target Release – July’13Sample Availability: Feb’13


69


• Superior linearity performance

• High dynamic range

• High Gain


• Simplify application Circuitry


• AGC or Temperature Compensation Circuitry

Parameter Unit 1450-2750MHz

Test Freq MHz 2140

Max Gain dB 23.8

S11 dB 15

S22 dB 10

Gain Control Range dB 38

NF dB 2 @max gain

ACLR1 @12dBm dBc -66.6

OIP3 dBm 42

OP1dB dBm 27.4

Pin Max dBm +15 min

Control Voltage

Range

V 0-3.3

Quiscent Current

(Vc=0) typ

mA 390

Stability factor unconditional

ALM-812241450-2750MHz High Gain VGA Module

Target Release – Sep’11Sample Availability: Now!!!

Avago Confidential

Released!



Back up

Slides



Market and Competition:

• WiFi LNA for Labtop, CPE, Access Point, USB

dongle, PDA/Smart Phones

Avago’s Competitive Advantage:

• Fully matched GaAs E-pHEMT LNA module

• Industry’s best NF and Gain performance at 2.4-

2.5GHz and 4.9-6GHz bands.

ALM-2812Dual band 2.4-2.5GHz & 4.9-6GHz (802.11a/b/g/n) WiFi LNA

WiFi LNA

MCOB, 3x3x1.1mm

Parameter 2.45GHz 5.5GHz

Voltage (V) 3.3 3.3

Current (mA) 15 23.4

Gain (dB) 16.7 23.2

NF (dB) 0.8 1.4

IIP3 (dBm) +6.1 -2.2

IP1dB (dBm) -5.8 -12.8

2.4-2.5GHz

4.9-6GHz

Vcc

Vcc

RFOut52

RFOut24

LNAOn52

LNAOn24

RFIn52

RFIn24


http://www.asia.htc.com/asia/SEA/products/smart_c730/smart_c730_fea.html



UMTS 1.7-2.2 GHz, WiFi, WiBro WiMAX LNA

Value Propositions

Ultra thin package (0.4mm) for module application

Very low noise E-pHEMT technology

High linearity at low operating current

Built in bias control & shutdown functions

Low external component count

P/N

Freq

Range

(GHz)

Freq (GHz)

LNA Mode Bypass

Package (mm)Vd (V) Id (mA) NF (dB) IIP3 (dBm)

Gain

(dB)

IP1dB

(dBm)IL (dB)

IIP3

(dBm)

MGA-645T6 1.5 - 3.0 2.4 3 7 1.1 7 15 -6 4.5 17 2x1.3x0.4

MGA-655T6 2.5 - 4.0 3.5 3 10 1.2 3 15 +1 6.5 19 2x1.3x0.4

MGA-675T6 4.9 - 6.0 5.5 3 10 1.75 -3 18 -10 N/A N/A 2x1.3x0.4

Surface Mount

2.0 x 1.3 x 0.4 mm3

UTSLP

Note: MGA-675T6 does not have bypass switch

MGA-675T6 MGA-655T6 MGA-645T6

Wireless Data LNA



New UMTS, WiFi, WiMAX & LTE LNA

Value Propositions

Very low noise E-pHEMT technology


Built in bias control & shutdown functions (<100uA shutdown

current)


Miniature Package

Target Application

LNA or Pre-Driver for USB Dongle, CPE, AP, Cellular Handset

and etc.

P/N

Freq

Range

(GHz)

Freq (GHz)

LNA Mode Bypass


Gain

(dB)

IP1dB

(dBm)IL (dB)

IIP3

(dBm)

MGA-64606 1.5 - 3.0 2.4 3 7 1.1 7 15 -6 4.5 16 2x1.3x0.5

MGA-65606 2.5 - 4.0 3.5 3 10 1.2 5.5 15 +1 4.2 19 2x1.3x0.5

Surface Mount

2.0 x 1.3 x 0.5 mm3

DFN

Vbyp VsdBypass

SwitchMode

Low Low Close Bypass

High Low Open LNA

xxx High Open Isolation

Target Release MGA-64606: Feb’11; MGA-65606: Mar’11 Samples now

Wireless Data LNA



MGA-685T64.7nH

68pFRF In47nH

68pF

4.3Kohm

0ohm

68pF

10nF

3V

RF Out

2

5

6

MGA-685T64.7nH

68pFRF In47nH

68pF

4.3Kohm

0ohm

68pF

10nF

3V

RF Out

2

5

6

Mobile TV and UMTS 0.7-1.0 GHz LNA

Value Propositions

Ultra thin package (0.4mm) for module application

Very low noise figure


Built in bypass function (MGA-785T6)


P/N

Freq

Range

(GHz)

Freq (GHz)

LNA Mode Bypass


Gain

(dB)

IP1dB

(dBm)IL (dB) IIP3 (dBm)

MGA-685T6 0.1 - 1.5 0.5 3 10 0.8 0 19 -0.5 N/A N/A 2x1.3x0.4

MGA-785T6 0.1 - 1.5 0.6 3 10 1.5 0 15.5 TBD 2.7 30 2x1.3x0.4

Surface Mount

2.0 x 1.3 x 0.4 mm3

UTSLP

MGA-785T6

MGA-685T6

MGA-725T6

+3 volts

47 nH

27 nH

W = 28 mils

L = 90 mils

Board Material:

16 mils FR4

0.1 uF

RF in RF outW = 28 mils

L = 90 mils

22 nH

51 ohm 120 pF68 ohm (10 mA)

OR

110 ohm(7 mA)

120 pF

4.7 pF 8.2 pF

200 pF

MGA-685T6

MGA-785T6

Wireless Data LNA



MGA-545P8 50MHz to 7GHz Medium Power Amplifier

Value Proposition:

Single +3.3V Supply

PAE 46% at Psat 22dBm

Simple match at input

Unconditionally stable

Target Application:

IEEE802.11a,b and g WiFi applications, 50MHz to 7GHz

applications

Vdd = 3.3V Input Signal=OFDM signal with 54Mbps, Modulation=64QAM

Simplified Internal Schematic

ParameterTypical Spec

(Saturation Mode)

Typical Spec

(Linear Mode)

Test Frequency 5.825 GHz 5.825 GHz

Bias Condition 3.3V, 92mA 3.3V, 135mA

Gain 9.5 db 11.5 dB

OIP3 34 dBm 34 dBm

P1dB 22 dBm (Psat) 21 dBm

Linear Power @ 4% EVM,

54Mbps OFDMNA > 15dBm

Package QFN 2x2x0.75mm QFN 2x2x0.75mm

Wireless Data PA



MGA-83563 0.5 to 6GHz Medium Power Amplifier

Value Proposition:

Single +3V Supply

50 Ohm matched output, and simple match at input

High PAE 38% at Psat

Unconditionally stable

Target Application:

0.5 to 6GHz wireless applications

SOT-363

2 x 1.2 x 0.95 mm

Simplified Internal Schematic

Parameter Typical Spec

Test Frequency 2.4 GHz

Bias Condition 3V, 152mA

Gain 22.0 dB

OIP3 29.0 dBm

P1dB 19.2 dBm

Psat (Idd=139mA) 22.4 dBm

PAE 37%

General Purpose Amp

Documents

5 AVAGO WSD Infrastructure_2012-10