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Advancements For Sub 45nmAdvancements For Sub 45nm Fixed Abrasive STI CMP
John Gagliardi Andre ZagrebelnJohn Gagliardi, Andrey Zagrebelny, Bill Joseph, Larry Zazzera
3M Companyp y
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
Outline• Background
– Timeline of developments leading to Advancements forTimeline of developments leading to Advancements for Sub 45 nm FA STI CMP
– The FA Process and Outstanding Planarization • Current FA STI CMP Roadmap• Current FA STI CMP Roadmap
– 65 nm, 45 nm and Sub 45 nm• Advancements for 45 nm and sub 45 nm
– Chemistry – Abrasive– CMP process and performanceCMP process and performance
• Summary and Conclusion
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
Microreplicated Fixed Abrasive
30 µm hexagonal composites of ceria and organic bond
125 µm
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
3M Laboratory’s Reflexion Web™ CMP Polisher
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
Development Timelines Leading to advancements for sub 45 nm2001 – Third Generation of FA Development was completed
• Close collaboration with tool builder and semiconductor fabs2002 - AMAT’s Reflexion™ Web Ready
• FA production tool available to Industry Numerous Technical papers published by
• 2-Step process developed• Selective Chemistry with FA
2003 – FA In Production3 F b t k FA i t d ti
industry leaders: UMC, Infineon, IBM, Cypress, Hyundai, AMD, 3M, AMAT, SEMI
• 3 Fabs take FA into production2004/2005 – Expanding Production
• IBM and UMC publish prominent technical papers2006 Sub 45nm FA STI CMP Development begins
Europa, Hyundai, VIT and others
2006 – Sub 45nm FA STI CMP Development begins• New abrasives, chemistry and subpads• Low pressure surfactant process taken into production at 45nm
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
Process Approach to attain superior planarizationplanarization
3M SWR550 FASelective ChemistryNo Conditioning
BuffNo Conditioning5k-10k wafer Life
DI Water BuffPolitex Pad
P3
Pre-Planarization
Fixed Abrasive
Conventional Pre
P1 P2Web P1 Pre-Planarize
P2 Clear and StopP3 Remove Ceria
FA ProcessConventional Pre-Planarization3M Diamond Conditioner
P3 Remove Ceria
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
Planarization Comparison• Outstanding Planarization
– Low trench oxide dishing/range; low nitride erosion/range
hing
Reference: B. Reinhold, J. Groschopf, 2006 International Conference on Planarization/CMP Slurry
ized
Dis
h Technology (2006 ICPT), October 12-13, 2006y
OnlySlurry + FA
Nor
mal
i
8X
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
NU and Process Stability• Exceptional WIWNU
50-150 Å nitride range (<5% on 3mm EE), depends mostly upondepends mostly upon incoming nitride ranges.
• Planarization Efficiency3-10x greater than gconventional pad/slurry processes; maximizes efficient removal of surface “peaks” and minimizes loss on surface “valleys ”loss on surface valleys.
• Process StabilityQuick start-up from tool idle Long consumable life Reference: J Gagliardi 2006 InternationalLong consumable life
5k-10k Wafers
Reference: J. Gagliardi, 2006 International Conference on Planarization/CMP Technology (2006 ICPT), October 12-13, 2006
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
Electrical Field Oxide ThicknessTraditional Slurry vs Fixed Abrasive STI CMPTraditional Slurry vs Fixed Abrasive STI CMP
1.2
Oxid
e
Traditional Slurry
Ref: “Using Fixed Abrasives in a Production Process for 200 mm STI Polishing,” Huang, C. K., Gagliardi, J. J., Gleason, E., 16th CMP User’s Mtg Proc Munich Apr 7 2006
1.1
rica
l Fi
eld
Slurry User s Mtg. Proc., Munich, Apr. 7, 2006,
0.9
1
zed
Ele
ctr
Fixed Abrasive
0.8
No
rmaliz
1 2 3 4 5 6 7 1 2 3 4 5 6 7 8 9 10 11 12 13
0.70 200 400 600 800 1000
D t P i t
1 2 3 4 5 6 7 1 2 3 4 5 6 7 8 9 10WAFER
11 12 13
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
Data Point
Additional Characteristics• Selectivity
~ 200:1 (topography vs. planarized film)planarized film)
~ 1.2:1.0 (oxide to nitride.)
S f S• Self-StoppingHigh insensitivity to
overpolish yields a o e po s y e ds awide process window.
• Product PerformancePerformanceProduction-Proven
within-roll and roll-to-roll consistency
Reference: Y. Moon, A. Kapur, R. Venigalla, L. Economikos, 2006 International Conference on Planarization/CMP Technology (2006 ICPT) O t b 12 13 2006
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
roll consistency. ICPT), October 12-13, 2006
FA STI CMP Roadmap 65nm 45nm and Sub 45nm65nm, 45nm and Sub 45nm
2011 20122006
65 nm Manufacturing
2007 2008 2009 2010300 mm
45 nm Manufacturing
45 nm Process Dev.
65 nm Manufacturing
32 D l t 32 P D l t32 nm Development 32 nm Process Development
ChemistrySWR 521 & 542
SWR 548 & 550Subpad Improvements
Nanoceria Abrasives
Advanced FEOL Applications
200 mm
p p
Sub 250 nm Manufacturing
200 mm
R14 FA Rotary Pad
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
2010 2011 20122006 2007 2008 2009
Advancements for 45nm and sub 45nm
• Chemistry– Surfactant introduced to polishing chemistry
• AbrasiveCurrent work with nano ceria– Current work with nano-ceria
• Size, Shape, Loading– Fixed Abrasive Topography
• Shape Density Size• Shape, Density, Size
• Process Improvements– Reduced Pressure Polishingg– Higher throughput– Lower Increments
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
Advancements for 45nm and sub 45nmChemistryAbrasive
Surfactant Added Nano Ceria
Abrasive
Standard Polish
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
Advancements for 45nm and sub 45nmAb iAbrasive
Current work with nano-ceria - Size, Shape, LoadingFixed Abrasive Topography - Shape, Density, Sizep g p y p , y,
548, 550 Ceria, 135 nm521 & 542 Ceria, 150 nm
Multiple samples show acceptable rate
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
p p p
Advancements for 45nm and sub 45nmProcess
• CMP process and performance improvement
Surfactant Chemistry allows much lower downforceSurfactant Chemistry allows much lower downforce
- Lower downforce reduces defects 50-80% – Yieldallows FA to run at lower increments – Cost
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
Advancements for 45nm and sub 45nmLow Pressure Reduces Defects
From a
KLA T SP2KLA-Tencor SP2
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
Advancements for 45nm and sub 45nmLow Pressure Reduces DefectsLow Pressure Reduces Defects
Generally to levels equal to HSS slurryFABA 12 months in production HARP STI 45 nmA 12 months in production, HARP STI, 45 nmB Tested at 65 nm HDP STI and found
65% reduction in defects on product wafersReduction of IncrementHigher Rate (throughput)
C Tested at 45 nm HARP STI and found80% reduction in defects on product wafersReduction of IncrementHigher Rate (throughput)
D Tested at 65 nm HDP STI and found “ i ifi t” d ti i d f t d t f“significant” reduction in defects on product wafers
E Tested at 65 nm HDP STI and found 80% reduction in defects on product wafers
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
Advancements for 45nm and sub 45nmAdvancements for 45nm and sub 45nmProcess
• CMP process and performance improvement
Lower pressures reduce subpad deflection
S f b i f t b d f d- Some fabs experience a fast-band near wafer edge known to be the result of the subpad deflection
Reference: Fixed Abrasive Direct STI CMP Allows Elimination of the Conventional Subpad Compromise for WIW and WID Ranges, J. J. Gagliardi, Abs. 915, 204th Elec. Chem. Soc., Oct. 12-17, 2003
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
Advancements for 45nm and sub 45nmProcess
4000Edge Profiles vs. Process
3000
3500
4000 (
Å)
1500
2000
2500
nin
g O
xid
e
500
1000
1500
Rem
ain
3.5 psi - No Surfactant
1 5 psi + Surfactant0
80 85 90 95 100 Wafer Edge - mm
1.5 psi + Surfactant
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
Advancements for 45nm and sub 45nmAdvancements for 45nm and sub 45nmProcess Summary
Benefit ImpactHi h R t Th h tHigher Rates ThroughputLower Defects YieldImproved Fastband YieldLower Increment CoCLower Increment CoC
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
Summary and ConclusionSummary and Conclusion
• Advances in Chemistry and Abrasive have improved the performance of the FA approach to STI CMP, enabling 45 nm.
• A path to achieve key performance needs – lower defects – for sub-45 nm processlower defects for sub 45 nm process has been identified.
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
OutlineBackground
Timeline of developments leading to Advancements for Sub 45nm p gFA STI CMPTwo Step “hybrid” FA Process and Outstanding Planarization
Current FA STI CMP RoadmapCurrent FA STI CMP Roadmap 65nm, 45nm and Sub 45nm
Advancements for 45nm and sub 45nmChemistryChemistry AbrasiveCMP Process and performance
S d C l iSummary and Conclusion
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA3 NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
Future Venues for 3M CMP Updates
• August 2007, Clarkson University CAMP CMP Conference1. “ADVANCEMENTS IN PAD CONDITIONING FOR TUNGSTEN
CHEMICAL MECHANICAL PLANARIZATION”2. “RECENT ADVANCEMENTS IN FIXED ABRASIVE STI CMP”
• September 2007, Semicon Taiwan, Taipei, Taiwan1. “Mineral, Chemistry and Process Advancements to take Fixed Abrasive
STI CMP to sub 45 nm”
• October 2007, ICPT Conference, Dresden, Germany1. “Defectivity Improvement for Fixed Abrasive Based STI CMP in Advanced
Logic Technology ”Logic Technology 2. “Laser Scattering Technique for Characterizing Defects and Surface
Morphology in the Fixed Abrasive CMP ”
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA3 NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
Advancements For Sub 45nmAdvancements For Sub 45nm Fixed Abrasive STI CMP
John Gagliardi Andre ZagrebelnJohn Gagliardi, Andrey Zagrebelny, Bill Joseph, Larry Zazzera
3M Companyp y
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA3 NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
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