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University seminar series at Stanford on "Bio-applications of Nanotechnologies"
Chairman, Sub-committee on Nano-TechnologyCommittee on Industrial Technology
KEIDANREN
Japanese Industry’s Visionand
Recent Activities of Nanotechnologies
Japanese Industry’s Visionand
Recent Activities of Nanotechnologies
18 April 2002
Michiharu Nakamura
日立の概要Reform of Japanese social systems
The Government
- recognizes that “Science and Technology” is one of the main driving forces for economic growth and the progress of society
- is trying to promote structural reform by introducing deregulation, privatization of national agencies, etc.
- are also introducing new management systems
- is trying to recover from the current recession
Universities
Large companies
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日立の概要
- allocates S&T resources with the highest priority given to
To enhance science and technology in Japan
was established in Jan. 2001 to play a role of a source of wisdom to support the Prime Minister.
The Council for Science and Technology Policy
“The 2nd Science and Technology Basic Plan”
(1) Life Sciences, Health and Medical Treatment(2) Information and Telecommunications(3) Environmental Science(4) Nanotechnology and Materials(5) Others: New energy sources, manufacturing technologies, social infrastructure, new frontier science
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1.Prof. Ryogo Kubo ( 1962 ) ( J. Phys. Soc. Jpn. 17 (1962) 975 ) Discovery of “Kubo-effect” in sub-micron size metals New physics for nano-scale metal/semiconductor “ Coulomb-blockade effect” “SET”2.Prof. Ryoji Ueda ( 1970`s ) New physics for ultra fine particles Direct observation of structural changes in ultra-fine particles (ERATO: Hayashi project) 3.Prof. Norio Taniguchi ( 1974 ) Inroduced the concept of nanotechnologies at ICPE4.Prof. Hiroyuki Sakaki ( 1975 ~) Artificially fabricated semiconductor nano-structures, such as ultra-thin films, quantum wires, quantum boxes
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日立の概要Japanese universities’ pioneering works on nano-technologies
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New science fields in
physics and chemistry
has been established - Semiconductor/metal transition
- Higher conductance than metals
- Large magnetic resistance
Progress in fabrication
technologies
Discovered by Dr. Sumio Iijima (1991)
( Under the permission of Mr. Sone, NEC )
Carbon nanotube
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n-Plan 21n-Plan 21(2001.3.27)
proposed by KEIDANREN
Exploratory Research
R&D strategy for nano-technology in Japan
- Create technical innovations in IT, Biotechnology, Energy/environment, and materials- Focus R&D resources more effectively to expand impact on industry and society
Challenge to the Future Projects
Flagship Projects
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R&D strategy for nano-technology in Japan
Next-generation semiconductor technology ASUKA (2001 - 5 years) 100 - 70 nm MIRAI (2001 - 7 years) 70 - 50 nm HALUKA (2001 - 3 years)Terabit-class information storage technologyNew devices for Peta-b/s communication
R&D focused on practical applications andindustrialization of them within 5 to 10 years
Examples
Flagship Projects
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R&D strategy for nano-technology in Japan
Challenge to the Future Projects
New materials by controlling nano-structuresMedical/healthcare by fusing biotechnology andnano-systemsMeasurement with accuracy below nm scale Nano-scale fabrication Simulation
R&D to create revolutionary fundamentaltechnologies to support industry
Examples
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R&D strategy for nano-technology in Japan
New physicsNew chemistryNew scienceNew theories and methods of analysis and simulation
In-depth research of nano-scale particlesand nano-structure materials
Examples
Exploratory Research
100 nm
10 nm
1 nm
1970 200019901980 2010
Fab
ricati
on
siz
e
1 m
10 m
0.1 nm
Semiconductordevices
Nu
mb
er
of
ato
ms/b
it
1
106
108
104
102
1010
Magnetic/Opticaldisks
To makeBreakthrough by Nanotechnology
Red Brick Wall
DNA
Hydrogen atom
Protein molecule
Top down
Bottom up Fusion
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What is nonotechnology?
IT and Electronics
・ Electronic Devices・Magnetic Devices・ Optical Devices
Examples:・Mobile Computer・ Information Storage with 103 Times Larger Capacity・ Broad-Band Internet・ Sheet Display・ Quantum Computer
Nanotechnology asthe fundamentals
Revolutionary improvement in material properties
Measurement, Control, fabrication and Simulationin atomic / molecular-level scale
New Materials
Environment and Energy Health and Welfare
Nano-technology for IT and ElectronicsNano-technology for IT and Electronics
ApplicationField
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日立の概要50nm CMOS technology
50 nm
Si-sub.
CoSi2
SiN
SiO2
Spacer
Gate
TEM photograph
1.0
1.0
1.2
1.4
0.5 1.5Rela
tive S
peed
Voltage(V)
High Speed PerformanceHigh Speed Performance
ConventionalNewly Developed
IEDM 2001 (Hitachi Central Research Lab.)
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Gate length/width:
Tunnel oxide thickness:Interlayer dielectric film:
0.5/ 3μm
7 nm15nm
0.1μm
Si nano dots: diameter ~10nm
T. Ishii et al., IEDM, 2000, p.305
日立の概要
Non-volatile memory cell with Si nano dots
Experimentally fabricated device
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Semiconductor technology in the road mapSemiconductor technology in the road map
1999 2001 2004 2008 2011 2014Process Generation (nm) 180 130 90 60 40 30
DRAM Scale (bit) 256M 512M 1G 6G 16G 48G
Main Requirements to Achieve the Above Goal
Gate Insulation (nm) 1.9-2.5 1.5-1.9 0.8-1.2 0.6-0.8 0.5-0.6k of Layer Insulation 3.5-4.0 1.6-2.2 1.5 <1.5
Nanotechnology EraTechnological breakthrough is required.
Year
Prospective technology in research exists.No prospective technology has been found yet.
Red Brick Wall(ITRS 2000 Update Edition)
MPU Gate Length (nm) 120 90 65 40 30 20
Pattern Deviation(nm)65 31 26 18 13Alignment Accuracy(nm)
13 4 3 2459.0 6.3
1.2-1.5<1.52.7-3.5
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Research and development targetsResearch and development targets
●High Permittivity (high-k) Gate Oxide Film and Its Processing Technology and Related Measurement and Analysis Technology●Low Permittivity (low-k) Interlayer Insulation and Its Processing Technology and Related Measurement and Analysis Technology●Lithography Mask and Related Measurement Technology●New Device and Process Technology●System Architecture
Action in both Practical Technology Development and Analytical R&D Is Required to Establish System on Chip (SoC) Technology.
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MOS devices (Goal: Planar MOS breakthrough) MOS devices (Goal: Planar MOS breakthrough)
・ High-k Gate Insulation Material Development → U.S. and Europe are leading. Japan is launching Asuka Project.・ Novel Structure Devices → Research on Vertical MOS and SOI
Necessity of High-k Gate Insulation Film Development
(Year)
SiO
2-E
qu
ival
ent
Gat
e In
sula
tion
Th
ick
nes
s (n
m)
1999 2002 2005 2008 2011 20140
1.0
2.0
3.0
SiO2
SiON, Si3N4, Al2O3
κ 10-20)
Metal Oxide(> )
Metal Oxide
Leak Current Suppression
Source Drain
Gate Insulation
< 2 nm
~ 30 nm
New gate insulation filmdevelopment is necessary.
ZrO2 HfO2
Pr2O3
20κ
(
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Memory density trend in memory devicesMemory density trend in memory devices
+30% a year
Optical Disk
Thermal Fluctuation LimitNear Field Optics
Patterned Media
Unit Memory Size1m
DRAM DVD-ROM MagneticDisk
10-1
10-4
10-5
10-6
10-7
1
Magnetic Disk
(Year)1970 1980 1990 2000 2010
104
10 3
102
10
1
10 -1
10-2
Are
al M
emor
y D
ensi
ty (
Gb
/in2
)
+100% a year
+40% a year
SemiconductorMemory (DRAM)10-4
10-3
10-5
PerpendicularMagnetic Recording
(Conference Presentation)
10-3
10-2
Opto-Magnetism
ManipulationAtomic
Are
al M
emor
y D
ensi
ty (
Gb
/mm
2)
10
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All Rights Reserved Copyright (C) 2001 Hitachi, Ltd.
LongitudinalLongitudinal
Under layerUnder layerMagnetic fluxMagnetic flux
Single-pole-typeSingle-pole-type writerwriter
Main poleMain poleAuxiliary Auxiliary polepole
Recording layerRecording layer
Ring-type Ring-type writerwriterShield Shield
layerlayer
GMR GMR elementelement
Magnetic fluxMagnetic flux
PerpendicularPerpendicular
From longitudinal to perpendicular
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All Rights Reserved Copyright (C) 2001 Hitachi, Ltd.
Main PoleMain Pole
Auxiliary Pole / Upper ShieldAuxiliary Pole / Upper Shield
Bottom ShieldBottom Shield
GMRGMRSensorSensor
CoilCoil
■ ■ SPT WriterSPT Writer Main pole Main pole :: Tww = 250 nmTww = 250 nm PT= 400 nmPT= 400 nm Bs = 16 kGBs = 16 kG Aux. pole :Aux. pole : PT = 2500 nmPT = 2500 nm Bs = 10 kGBs = 10 kG
■ ■ GMR readerGMR reader Twr = 200 nm Twr = 200 nm Gs = 80 nmGs = 80 nm
ABSABS
(( Cross sectional viewCross sectional view ))SPT/GMR-merged perpendicular head
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Collaboration with Tohoku University and AITCollaboration with Tohoku University and AITpartly carried out under the ASET program, NEDOpartly carried out under the ASET program, NEDO
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7.5×7.5μm7.5×7.5μm
Recorded bit patterns (MFM)
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All Rights Reserved Copyright (C) 2001 Hitachi, Ltd.
Nano-glass material for optical memory
Response and Refractive index shift by Laser irradiation
Response and Refractive index shift by Laser irradiation
Elapsed time ( nsec )
100 150 2005000
2
4
2.75
2.65
2.55
Δ n / n=5 . 5%
-50
irradiation ON OFF
Ref
ract
ive
ind
ex n
Las
er in
ten
sity
(m
W)
Wave length: 650nm
Large refractive index shift is caused by interaction between nano-particles and amorphous grain(glass).
( By Naito, Hitachi)Micro-structure of nano-glass
50nm
Amorphous grain(grass)
Co3O4- Nano structure of Glass thin film(TEM photograph)
Co3O4- Nano structure of Glass thin film(TEM photograph)
Number of particles : 311Mean Diameter r : 13.3nmDeviation δ : 3.97nmVariance δ/ r : 29.8%Pitch of each grain : 1nm
Number of particles : 311Mean Diameter r : 13.3nmDeviation δ : 3.97nmVariance δ/ r : 29.8%Pitch of each grain : 1nm
Co3O4 Columnar nano-particles
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Blue laser beam
Improvement of Recording Density by using Super-Resolution Film more than 1 Tb/in⇒ 2
Improvement of Recording Density by using Super-Resolution Film more than 1 Tb/in⇒ 2
Reflective layer
20% nsecTarget
Glass SubstrateGlass Substrate
Research targetsResearch targets
10nsec5.5 % Present
ResponseTime
Δ n / nSuper-resolution film
Super-resolution film
Recording layer
High-density optical memory based onnew super-resolution film
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Nano-optical devices by photonic crystalSharp bend of optical path
Perfect band gap 2-D crystal(J. D. Joannopoulous, Nature , 386, 143 (1997))
Miniaturization ofintegrated optical circuit
Optical field
Optical path by photonic crystal defect
Controllability of light propagation speed based on coupling constant shift
(K. Hosomi and T. Katsuyama, PECS3 (2001))
Efficient control of high speed light-pulse
WDM Add/Drop module by photonic crystal - Miniaturized integrated optical circuit
Demultiplexer based on micro-resonators
Optical bend pathDispersion compensator based on coupling defect
Micro laser
Modulater based on micro-resonators
To receivers
Multiplexerλ1・・ λn
λk
λq
~ 30μm ~20
μm
Towards gaining further optical property
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All Rights Reserved Copyright (C) 2001 Hitachi, Ltd.
Bio Nano-technology for Medical & Welfare
Bio Nanotechnology
・ Medical sensors・ Gene sensors・ DNA/Protain chips
Example・ Highly sensitive analysis of cancer cell・ High speed DNA separation chip・ Protein chips for drug screening・ Drug delivery system・ Anesthesia by using remote micro-manipulator
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Nanotechnology asthe fundamentals
Revolutionary improvement in material properties
Measurement, Control, fabrication and Simulationin atomic / molecular-level scale
New Materials
Environment and Energy IT, Electronics
ApplicationField
Order-made medicine
Gene information 3 billion
・・・・・GATCCGAGATGCATGACT ・・・・・・
・・・・・ CTAGGCTCTACGTACTGA ・・・・・・Cell 60 trillion
Gene 40k types
DNA: Life informationDNA: Life information
Genome-based drug
Gene/Protein Function
Study on Protein Structure
・ 100k types・ 100k types ・ interact each other・ interact each other
Protein: Life phenomenonProtein: Life phenomenon
Gene Analysis & ProteomicsGene Analysis & Proteomics
Era of proteome
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IncidentLight (white)
ReflectedLight
Optical Near-Field
Gold Thin Film (20nm)
Intensity
Polymer Substrate
Wavelength
Polymer Sphere (110nm)
Intensity
Wavelength
Gold Particle (20nm)
SEM micrograph of the gold particle monolayer
Resonant absorption of light. The wavelength of the absorption maximum depends on the refractive index of the surrounding.
Reflection from nanoparticles
Optical bio-sensing with cap-shaped Au nanoparticles 1
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Basic nano-tech. : Measurement ・ Simulation
New materials Environment/ Energy
IT, Electronics Medical, Welfare
Atomic,Molecularscale measurement/control/fabrication/simulation
・ Ultra high voltage SEM・ STM, AFM・ CD-SEM・ Nano-scale machining by self-organization ・ Electron beam lithography・ Multi-scale simulation
BasicNanotechnology
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Revolutionary improvement in material properties
electric・ magnetic・ optical・ strength・ thermal
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1M Volt holography electron microscope
1MV Holography Electron Microscope
49.8 pm 49.8 pm
49.8 pm 0.1nm
Super high voltage electron microscope was developed. World record ( 49.8 pm) of resolution power for crystal lattice was achieved.
Left: Crystal lattice stripes of Au thin film,pitch of which is 49.8 pm, Light: the modelof Au crystal unit lattice
CREST/SORST、 Collaboration with Univ. of TokyoAll Rights Reserved,Copyright (C) 2002 Hitachi,Ltd.
日立の概要
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Thank you. . .
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