2sd2375

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Power Transistors

2SD2375

Silicon NPN triple diffusion planar type

For power amplification with high forward current transfer ratio

Features High forward current transfer ratio hFEwhich has satisfactory

linearity

Full-pack package which can be installed to the heat sink with

one screw

Absolute Maximum Ratings (TC=25C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

ICP

IC

IB

PC

Tj

Tstg

Ratings

80

60

6

6

3

1

25

2

150

55 to +150

Unit

V

V

V

A

A

A

W

C

C

Electrical Characteristics (TC=25C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Symbol

ICBO

ICEO

IEBO

VCEO

hFE*

VCE(sat)

fT

Conditions

VCB= 80V, IE= 0

VCE= 40V, IB= 0

VEB= 6V, IC= 0

IC= 25mA, IB= 0

VCE= 4V, IC= 0.5A

IC= 2A, IB= 0.05A

VCE= 12V, IC= 0.2A, f = 10MHz

min

60

500

typ

50

max

100

100

100

1500

1

Unit

A

A

A

V

V

MHz

*hFERank classification

Rank Q P

hFE 500 to 1000 800 to 1500

TC=25C

Ta=25C

Unit: mm

1:Base

2:Collector

3:Emitter

TO220D Full Pack Package

1

9.90.3

15.0

0.5

13.7

0.2

4

.20.2

4.60.2

2.90.2

0.80.1

1.40.2

2 3

3.20.1

2.60.1

0.550.15

2.540.3

5.080.5

3.0

0.5

1.60.2

Note: Ordering can be made by the common rank (PQ rank h FE= 500 to 1500) in the rank classification.

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Power Transistors 2SD2375

PC Ta IC VCE IC VBE

VCE(sat) IC hFE IC fT IC

Area of safe operation (ASO) Rth(t) t

0 16040 12080 14020 100600

40

32

24

16

8

36

28

20

12

4

(1) TC=Ta

(2) Without heat sink(PC=2W)

(1)

(2)

Ambient temperature Ta (C)

Collectorpowerdissipation

PC

(W)

0 121082 640

1.0

0.8

0.6

0.4

0.2

TC=25CIB=1.0mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

0.3mA

0.2mA

0.1mA

0.9mA

Collector to emitter voltage VCE (V)

CollectorcurrentIC

(A)

0 1.21.00.80.2 0.60.40

5

4

3

2

1

VCE=5V

TC=25C

Base to emitter voltage VBE (V)

CollectorcurrentIC

(A)

0.01 0.1 1 100.03 0.3 30.01

0.03

0.1

0.3

1

3

10

30

100IC/IB=40TC=25C

Collector current IC (A)

Collectorto

emittersaturationvoltage

VCE(sat)

(V)

0.01 0.1 1 100.03 0.3 31

3

10

30

100

300

1000

3000

10000

VCE=4VTC=25C


Forw

ardcurrenttransferratio

hFE

0.01 0.1 1 100.03 0.3 30.1

0.3

1

3

10

30

100

300

1000VCE=12V

f=10MHzTC=25C


Transitionfrequency

fT

(MHz)

1 10 100 10003 30 3000.01

0.03

0.1

0.3

1

3

10

30

100Non repetitive pulseTC=25C

ICP

IC

10mst=1ms

DC

Collector to emitter voltage VCE (V)

CollectorcurrentIC(

A)

104 10103 101102 1 103102 104102

101

1

10

103

102

(1) Without heat sink(2) With a 100 80 2mm Al heat sink

(1)

(2)

Time t (s)

Thermalresistance

Rth

(t)

(C/W)

Documents

2sd2375