1. 2. MOSFET( 3. MOSFET 4. 5. MOSFET 6. MOSFET2nd order effect
7. JFET
5-1
(transistor) (valve) (a) (b)
5-2
1
bipolar junction transistor, BJT field effect transistor, FET
BJT pn B C
E p+
p C
E
n B
E B
C
VEB
VBC 5-3
FET
(channel)
S G D
S
G D
pFET
nFET
5-4
2
FET(Junction Field Effect Transistor,
JFET)(Metal-Oxide-Semiconductor FET, MOSFET)(Gate)2 (Source) n p+ L
p+ (Gate)1 t (Drain) (S) (Oxide) (G)
(Metal) p n+ n+ (D) (Semiconductor) (Body)
JFET\pn
MOSFETMOS 5-5
HONOR LIST BJTpoint contact transistor Bell Laboratory(John
Bardeen, 1908-1991)Walter Brattain, 1902-1987William Shockley,
1910-19891947 pn1956FETBJT FET FET
1985K. von KlitzingMOSFET (Integer Quantum Hall Effect, IQHE)
1998(HEMT, high mobility transistor) Fractional Quantum Hall
Effect) , "", , , 2000. 2000 (Zhores I. Alferov)(Herbert Kroemer)
(Jack St. Clair Kilby) 5-6
3
1964 for fundamental work in the field of quantum electronics,
which has led to the construction of oscillators and amplifiers
based on the maser-laser principle Charles Hard Townes, Nicolay
Gennadiyevich Basov, Aleksandr Mikhailovich Prokhorov 1973L. Esaki
(tunneling effect)
5-7
MOSFETnMOSFET(NMOS) (S) (Oxide) (G) (S) (D) (G) (G)
(Metal) p n+ n+ (D) (Semiconductor) (Body)
(S) (body)
(D)
MOSFET MOSFET
5-8
4
pnNMOS(cut off) (S) n+ (G) C p (Body) VDS>0
VGS=0 (Oxide) (D) n + n+
C p
S
D G IG=0
ID
5-9
VGS
p NMOS (S) n+ p (G) n+
0Vt DS VDS DSI-V 1.0 ID 0.8 (mA) 0.6 0.4 0.2 0 0 0.2 0.4 VDS (V)
VGS= 4V 3.5V 3.0V 2.5V VGS2.0V= Vt
5-13
(a) VG VS n+ L n+ n+ C VGS Vt VG VGD VD VS VGS
(b)Vt VGD VDS VD
C n+
ID
ID
VDS
VDS 5-14
7
(c) VG VS n+ VGS Vt VGD VDS n+ n+ C VG VD VS VGS
(d)VGD Vt VDS X C VD
L n+
triode ID ID
saturationVDSS
VDS
VDS
5-15
VGD= Vt(pinch off)VDS VGDVtDL L0 0.8 (mA) 0.6 -1.0V 0.4 -1.5V
VGS-2.0V 0.2 S D ID 0 G VGS
