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1/21September 2002

AN1557APPLICATION NOTE

How to Design-in LightFlash Memories, Ensuring Compatibilitywith Standard Flash Memories in DVD and TV Applications

INTRODUCTION

This Application Note explains how to design-in the

M29KW016E and M29KW032E LightFlash memories, en-

suring compatibility with Industry Standard Flash memories

(M29W160D and M29W320D), typically in DVD and TV appli-

cations where the reprogramming feature is not required.

DESCRIPTION OF LightFlashFLASH MEMORIES

The LightFlash (M29KWxxxE) is a new family of non-volatile

Flash memories optimized for use in Basic Code Storage appli-

cations. They can be read, erased and reprogrammed. Read

operations can be performed using a single low voltage (2.7 to

3.6V) supply. Program and Erase operations require an addi-

tional VPP (11.4 to 12.6) power supply.

The memories have a uniform block architecture, where each

block can be erased independently so it is possible to preserve

valid data while old data is erased. Program and Erase com-

mands are written to the Command Interface of the memory.

An internal Program/Erase Controller simplifies the process of

programming or erasing the memory by taking care of all of the

special operations that are required to update the memory con-

tents.

The LightFlash memories feature a Multiple Word Program

command (based on a Fast Program Algorithm) which is used

to program large streams of data. It reduces the total program-

ming time by programming Words at consecutive addresses,

where the address is automatically incremented, thus reducing

the number of Write cycles required. The LightFlash family

uses a separate, external high voltage supply VPP of 12V, for

all Program and Erase operations to further reduce the Pro-gram and Erase times. Chip Erase times are typical ly 50% less

than on the Standard memories.

Refer to the M29KWxxxE datasheets for a complete descrip-

tion of the LightFlash memories.

CONTENTS

s INTRODUCTION

s DESCRIPTION OF

LIGHTFLASH FLASH

MEMORIES

s PACKAGES

s SIGNAL DESCRIPTIONS

s BLOCK ORGANIZATION

s COMMAND INTERFACE

s STATUS REGISTER

s WRITE PROTECTION

s AC AND DC

PARAMETERS

s PROGRAM AND ERASE

TIMES

s CONCLUSION

s REVISION HISTORY

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PACKAGES

Table 1 summarizes the organization and packages of the two sets of memories.

Table 1. Comparison of Industry Standard and LightFlash Memories

SO44 Connections

Figure 1 compares the S044 pin out of the M29KW016E with the M29W160D. The two differences are

highlighted by the shaded areas.

Pin 31 is DQ15A-1 in the M29W160D and DQ15 in the M29KW016E.

Pin 33 is the BYTE connection for the M29W160D but in the M29KW016E it is the VPP voltage connection.

When replacing M29W160D with M29KW016E care must be taken with pin 33. It must be set in the VPPrange to allow Program or Erase operations in the M29KW016E. If V PP is set to VIL or VIH, any Program

or Erase command will be ignored and the device will revert to read mode. To read the device VPP should

be at VIH or VSS.

Figure 1. SO44 Connections Comparison, 16Mbit

Note: The shaded areas highlight the differences.

Industry Standard LightFlash

Device Size Organization Packages Device Size Organization Packages

M29W160D 16Mb2Mb x 81Mb x16

SO44TSOP48

TFBGA48M29KW016E 16Mb 1Mb x16

SO44TSOP48

TFBGA48

M29W320D 32Mb4Mb x 82Mb x16

TSOP48TFBGA63

M29KW032E 32Mb 2Mb x16TSOP48

TFBGA48

AI06297

M29KW016E

DQ15A-1

BYTE

M29W160DM29W160D

G

DQ0

DQ8

A3

A0

E

VSS

A2

A1

A13

VSS

A14

A15

DQ7

A12

A16

DQ15

DQ5DQ2

DQ3

VCCDQ11

DQ4

DQ14

A9

A19

RP

A4

A7

8

2

34

5

6

7

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

2322

20

19

18

17DQ1

DQ9

A6

A5

DQ6

DQ13

44

39

38

37

36

35

34

33

A11

A10

DQ10

21

DQ12

40

43

1

4241

A17 A8

A18

W

VPP

G

DQ0

DQ8

A3

A0

E

VSS

A2

A1

DQ2

DQ3

DQ11

RP

A4

A7

DQ1

DQ9

A6

A5

DQ10

A17

A18

A13

VSS

A14

A15

DQ7

A12

A16

DQ5

VCC

DQ4

DQ14

A9

A19

DQ6

DQ13

A11

A10

DQ12

A8

W

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TSOP48 Connections

16Mbit Devices. Figure 2 compares the TSOP48 pin out of the M29KW016E with the M29W160D. The

three differences are highlighted by the shaded areas.

Pin 14 is NC (Not Connected) for M29W160D but VPP for M29KW016E. Pin 14 must not be left floatingon M29KW016E otherwise the memory operations are not reliable. In the M29W160D the connection is

ignored.

Pin 47 is BYTE for M29W160D but NC (Not Connected) for M29KW016E. Pin 47 is used to select between

a x8 and x16 bus width on M29W160D but it can be ignored on M29KW016E.

Pin 45 is DQ15A-1 for M29W160D and DQ15 for M29KW016E.

Figure 2. TSOP48 Connections Comparison, 16Mbit


AI06298

M29KW016E

DQ15A-1

BYTE

M29W160DM29W160D

DQ3

DQ9

DQ2

A6

DQ0

A3

DQ6

A8

A9

DQ13

A17

A10 DQ14

A2

DQ12

DQ10

DQ15

DQ4

DQ5

A7

DQ7

12

1

13

24 25

36

37

48

DQ8

A19

A1

A18

A4

A5

DQ1

DQ11

G

A12

A13

A16

A11

A15A14 NC

E

A0

RP

VPP

NC

VSS

VCC

VSS

RB

W

NC

A6

A3

A8

A9

A17

A10

A2

A7

A19

A1

A18

A4

A5

A12

A13

A11

A15A14

RP

NC

RB

W

NC

DQ3

DQ9

DQ2

DQ0

DQ6

DQ13

DQ14

DQ12

DQ10

DQ4

DQ5

DQ7

DQ8

DQ1

DQ11

G

A16

E

A0

VSS

VCC

VSS

NC

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32Mbit Devices. Figure 3 compares the TSOP48 pin out of the M29KW032E with the M29W320D. The

three differences are highlighted by the shaded areas.

Pin 14 is VPP/WP for M29W320D but VPP for M29KW032E. When replacing M29W320D with

M29KW032E care must be taken with pin 33. It must be set in the VPP

range to allow Program or Erase

operations in the M29KW032E. If VPP is set to VIL or VIH, any Program or Erase command will be ignored

and the device will revert to read mode. To read the device V PP should be at VIH or VSS.

Pin 47 is BYTE for M29W320D but NC (Not Connected) for M29KW032E. Pin 47 is used to select between

a x8 and x16 bus width on M29W320D but it can be ignored on M29KW032E.

Pin 45 is DQ15A-1 for M29W320D and DQ15 for M29KW032E.

Figure 3. TSOP48 Connections Comparison, 32Mbit


AI06299

M29KW032E

DQ15A-1

BYTE

M29W320DM29W320D

DQ3

DQ9

DQ2

A6

DQ0

A3

DQ6

A8

A9

DQ13

A17

A10 DQ14

A2

DQ12

DQ10

DQ15

DQ4

DQ5

A7

DQ7

12

1

13

24 25

36

37

48

DQ8

A19

A1

A18

A4

A5

DQ1

DQ11

G

A12

A13

A16

A11

A15A14 NC

E

A0

RP

A20

VSS

VCC

VSS

RB

W

NC

A6

A3

A8

A9

A17

A10

A2

A7

A19

A1

A18

A4

A5

A12

A13

A11

A15A14

RP

A20

RB

W

NC

DQ3

DQ9

DQ2

DQ0

DQ6

DQ13

DQ14

DQ12

DQ10

DQ4

DQ5

DQ7

DQ8

DQ1

DQ11

G

A16

E

A0

VSS

VCC

VSS

VPPVPP/WP

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TFBGA Connections

16Mbit Devices. Figure 4 compares the TFBGA48 pin out of the M29KW016E with the M29W160D. The

three differences are highlighted by the shaded balls.

B3 is NC (Not Connected) for M29W160D but VPP for M29KW016E. B3 must not be left floating onM29KW016E otherwise the memory operations are not reliable. In the M29W160D the connection is ig-

nored.

F6 is BYTE for M29W160D but NC (Not Connected) for M29KW016E. F6 is used to select between a x8

and x16 bus width on M29W160D but it can be ignored on M29KW016E.

G6 is DQ15A-1 for M29W160D and DQ15 for M29KW016E.

Figure 4. TFBGA48 Connections Comparison (Top view through package), 16Mbit


AI07500

654321

VSS

DQ15

A15

A14

A12

DQ3

DQ11

DQ10

A18

DQ1

DQ9

DQ8

DQ0

A6

A5

A7

G

E

A4

A3

DQ2

DQ6

DQ13

DQ14

A10

A9 A13

DQ4

DQ12

DQ5

RP

A11

DQ7

A2

VSS

A1

A16

G

F

E

B

A

D

C

H

NC

VPPA17

A19

VCC

A8

A0

NC

RB W

NC

654321

VSS

DQ15A-1

A15

A14

A12

DQ3

DQ11

DQ10

A18

DQ1

DQ9

DQ8

DQ0

A6

A5

A7

G

E

A4

A3

DQ2

DQ6

DQ13

DQ14

A10

A9 A13

DQ4

DQ12

DQ5

RP

A11

DQ7

A2

VSS

A1

A16

G

F

E

B

A

D

C

H

NC

NCA17

A19

VCC

A8

A0

NC

RB W

BYTE

M29KW016E M29W160D

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32Mbit Devices. The 32Mbit devices are both packaged in TFBGA packages but the M29W320D has 15

extra pins that are Not Connected. With the exception of these extra pins whose connection can be ig-

nored, the packages are mechanically compatible (refer to Package Mechanical section of datasheets),

that is they can be used on the same board.

Figure 4 compares the TFBGA pin out of the M29KW032E with the M29W320D. The differences are high-

lighted by the shaded balls.

B3 is NC (Not Connected) for M29W320D but VPP for M29KW032E. B3 must not be left floating on

M29KW032E otherwise the memory operations are not reliable. In the M29W160D the connection is ig-

nored.

F6 is BYTE for M29W320D but NC (Not Connected) for M29KW032E. F6 is used to select between a x8

and x16 bus width on M29W320D but it can be ignored on M29KW032E.

G6 is DQ15A-1 for M29W320D and DQ15 for M29KW032E.

Figure 5. TFBGA Connections Comparison (Top view through package), 32Mbit


AI07501

654321

VSS

DQ15

A15

A14

A12

DQ3

DQ11

DQ10

A18

DQ1

DQ9

DQ8

DQ0

A6

A5

A7

G

E

A4

A3

DQ2

DQ6

DQ13

DQ14

A10

A9 A13

DQ4

DQ12

DQ5

RP

A11

DQ7

A2

VSS

A1

A16

G

F

E

B

A

D

C

H

NC

VPPA17

A19

VCC

A8

A0

A20

RB W

NC

M29KW016E

TFBGA48

M29W160DTFBGA63

654321

VSS

A15

A14

A12

A13

DQ3

DQ11

DQ10

A18

VPP/WP

RB

DQ1

DQ9

DQ8

DQ0

A6

A17

A7

G

E

A0

A4

A3

DQ2

DQ6

DQ13

DQ14

A10

A8

A9

DQ4

VCC

DQ12

DQ5

A19

NC

RP

W

A11

DQ7

A1

A2

VSS

A5 A20

A16

BYTE

C

B

A

E

D

F

G

H

DQ15A1

NC(1)

NC(1)

NC(1)

NC(1)

NC(1)

NC(1)

NC(1)

NC(1)

NC(1)

NC(1)

NC(1)

J

K

L

M

87

NC(1)

NC(1)

NC(1)

NC(1)

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SIGNAL DESCRIPTIONS

This section describes the signals that differ between the LightFlash and Standard Flash devices.

VPP (M29KW016E, M29KW032E)

VPP is both a power supply and Write Protect pin. The two functions are selected by the voltage range

applied to the pin. The Supply Voltage VCC must be applied before the Program Supply Voltage VPP.

If VPP is in the range 11.4V to 12.6V it acts as a power supply pin for Program and Erase operations. V PPmust be stable until the Program/Erase algorithm is completed.

If VPP is kept in a low voltage range (0V to 3.6V) VPP is seen as a Write Protect pin. In this case a voltage

lower than VHH gives an absolute protection against Program or Erase, while VPP in the range of VHH en-

ables these functions. The VPP pin must be in the range of VHH when reading the Status Register during

Program and Erase operations.

A 0.1f capacitor should be connected between VPP and VSS to decouple the current surges from the pow-

er supply. Note that VPP must not be left floating or unconnected as the device may become unreliable.

VPP/Write Protect, VPP/WP (M29W320D)The VPP/Write Protectpin provides two functions. The VPP function allows the memory to use an external

high voltage power supply to reduce the time required for Unlock Bypass Program operations. The Write

Protect function provides a hardware method of protecting the 16 Kbyte Boot Block. The VPP/Write Protect

pin must not be left floating or unconnected.

When VPP/Write Protect is Low, VIL, the memory protects the 16 Kbyte Boot Block; Program and Erase

operations in this block are ignored while VPP/Write Protect is Low.

When VPP/Write Protectis High, VIH, the memory reverts to the previous protection status of the 16 Kbyte

boot block. Program and Erase operations can now modify the data in the 16 Kbyte Boot Block unless the

block is protected using Block Protection.

When VPP/Write Protect is raised to VPP the memory automatically enters the Unlock Bypass mode.

When VPP/Write Protect returns to VIH or VIL normal operation resumes.A 0.1F capacitor should be connected between the VPP/Write Protect pin and the VSS Ground pin to de-

couple the current surges from the power supply.

The VPP/Write Protectpin is not present on the M29W160D.

BYTE (M29W160D, M29W320D)

The Byte/Word Organization Select pin is used to switch between the x8 and x16 Bus modes of the mem-

ory. When Byte/Word Organization Select is Low, V IL, the memory is in x8 mode, when it is High, VIH, the

memory is in x16 mode. The Byte/Word Organization Select pin is not present in the LightFlash mem-

ories.

DQ15A-1 (M29W160D, M29W320D)

When BYTE is High, VIH, this pin behaves as a Data Input/Output pin (as DQ8-DQ14). When BYTE isLow, VIL, this pin behaves as an address pin; DQ15A1 Low will select the LSB of the Word on the other

addresses, DQ15A1 High will select the MSB.

RP

The Reset pin can be used to apply a Hardware Reset to the memory for both sets of devices. In the

M29W160D/320D it can also be used to temporarily unprotect all Blocks that have been protected (holding

RP at VID will temporarily unprotect the protected Blocks in the memory). Refer to the relevant datasheets

for a more detailed description.

NC

These pins are NOT CONNECTED internally so the memory will ignore any external connection.

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BLOCK ORGANIZATION

The LightFlash and Standard Flash memories have different block organizations. The LightFlash

memories have a Uniform block organization, while the Standard Flash memories have an Asymmetric

block organization. The block organization for each device is shown in Table 2. The differences must be

taken into account when erasing the memories using the Block Erase command (block address must be

specified). The different block organizations have no consequence for the Chip Erase command (the block

addresses are incremented internally) or Programming commands.

As the LightFlash memories only support a x16 data bus the following sections refer to operations using

only the x16 data bus.

Tables 3 and 4 give the block addresses for the LightFlash memories while Figures 6 and 7 give the

block addresses for the Standard Flash memories in x16 mode.

Table 2. Block Organization

Device Block Organization Type of Block Number of Blocks Size of Block

M29KW016E Uniform Main 8 128KWords

M29W160D Asymmetric

Main 31 32KWords

Small Main 1 16KWords

Boot 1 8KWords

Parameter 2 4KWords

M29KW032E Uniform Main 16 128KWords

M29W320D Asymmetric

Main 63 32KWords

Small Main 1 16KWords

Boot 1 8KWords

Parameter 2 4KWords

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Table 3. M29KW016E Block Addresses

Figure 6. M29W160D Block Addresses (x16)

Block Number Address Range

8 E0000h-FFFFFh

7 C0000h-DFFFFh

6 A0000h-BFFFFh

5 80000h-9FFFFh

4 60000h-7FFFFh

3 40000h-5FFFFh

2 20000h-3FFFFh

1 00000h-1FFFFh

AI07502

8 KWord

FFFFFh

FE000h

32 KWord

0FFFFh

08000h

32 KWord07FFFh

00000h

M29W160DTTop Boot Block Addresses (x16)

16 KWord

FBFFFh

F8000h

32 KWord

F0000h

F7FFFh

Total of 3132 KWord Blocks

8 KWord

FFFFFh

F8000h

32 KWord

32 KWord

01FFFh

00000h

M29W160DBBottom Boot Block Addresses (x16)

16 KWord

F7FFFh

0FFFFh

32 KWord

F0000h

08000h


07FFFh

04000h

4 KWord

4 KWord

FDFFFh

FD000hFCFFFh

FC000h

4 KWord

4 KWord

03FFFh

03000h02FFFh

02000h

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Table 4. M29KW032E Block Addresses

Figure 7. M29W320D Block Addresses (x16)

Block Number Address Range

16 1E0000h-1FFFFFh

15 1C0000h-1DFFFFh

14 1A0000h-1BFFFFh

13 180000h-19FFFFh

12 160000h-17FFFFh

11 140000h-15FFFFh

10 120000h-13FFFFh

9 100000h-11FFFFh

8 0E0000h-0FFFFFh

7 0C0000h-0DFFFFh

6 0A0000h-0BFFFFh

5 080000h-09FFFFh

4 060000h-07FFFFh

3 040000h-05FFFFh

2 020000h-03FFFFh

1 000000h-01FFFFh

AI07503

8 KWord

1FFFFFh

1FE000h

32 KWord

00FFFFh

008000h

32 KWord007FFFh

000000h

M29W320DT

Top Boot Block Addresses (x16)

16 KWord

1FBFFFh

1F8000h

32 KWord

1F0000h

1F7FFFh


8 KWord

1FFFFFh

1F8000h

32 KWord

32 KWord

001FFFh

000000h

M29W320DB

Bottom Boot Block Addresses (x16)

16 KWord

1F7FFFh

00FFFFh

32 KWord

1F0000h

008000h


007FFFh

004000h

4 KWord

4 KWord

1FDFFFh

1FD000h1FCFFFh

1FC000h

4 KWord

4 KWord

003FFFh

003000h002FFFh

002000h

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COMMAND INTERFACE

This section describes the commands used in both the Standard Flash and LightFlash families.

Table 5. Shared Commands

Note: X Dont Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal.

Shared Commands

Read/Reset Command. The Read/Reset command returns the memory to Read mode. This command

is the same for both families. The Read/Reset command is executed regardless of the value of V PP (VIH,

VIL or VHH) in the LightFlash devices.

Auto Select Command. The Auto Select command is used to read the Manufacturer Code and the De-

vice Code. The Auto Select command is executed regardless of the value of V PP (VIH, VIL or VHH) in the

LightFlash devices. Table 6 gives the codes for all the devices.

Word Program/ Program Command. The basic Program command is referred to as Word Program for

LightFlash and Program for Standard Flash. The command sequence is identical for both sets of devic-

es however for the LightFlash VPP must be set to VHH. If VPP is at VIL or VIH the command will be refused

and the the device will automatically revert to read mode.

Block Erase Command. The command sequence is identical for both sets of devices. In the Standard

Flash devices the Block Erase command can be used to erase one or more blocks. In the LightFlash

devices the command erases only one block at a time and V PP must be set to VHH. If VPP is at VIL or VIHthe command will be refused and the the device will automatically revert to read mode.

Table 6. Devices Codes

Command

Length

Bus Write Operations

1st 2nd 3rd 4th 5th 6th

Add Data Add Data Add Data Add Data Add Data Add Data

Read/Reset1 X F0

3 555 AA 2AA 55 X F0

Auto Select 3 555 AA 2AA 55 555 90

Word Program/Program

4 555 AA 2AA 55 555 A0 PA PD

Block Erase 6+ 555 AA 2AA 55 555 80 555 AA 2AA 55 BA 30

Chip Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10

Device Code

M29KW016E 88ABh

M29KW032E 88ACh

M29W160DT (Top) 22C4h

M29W160DB (Bottom) 2249h

M29W320DT (Top) 22CAh

M29W320DT (Bottom) 22CBh

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Special Command For LightFlash

Multiple Word Program Command. The Multiple Word Program command is an additional Program

command that can be used to program large streams of data. It greatly reduces the total programming

time when a large number of Words are written to the memory at any one time. VPP

must be set to VHHduring Multiple Word Program. If VPP is set to either VIL or VIH the command will be ignored, the data will

remain unchanged and the device will revert to Read/Reset mode.

It has four phases: the Setup Phase to initiate the command, the Program Phase to program the data to

the memory, the Verify Phase to check that the data has been correctly programmed and reprogram if

necessary and the Exit Phase. Table 7 shows the Multiple Word Program command sequence and Figure

8 shows the flowchart. Refer to the LightFlash datasheets for a complete description of this command.

The Multiple Word Program command is only available on the LightFlash devices.

Table 7. Multiple Word Program Command

Note: A Bus Read must be done between each Write cycle where the data is programmed or verified, to Read the Status Register and checkthat the memory is ready to accept the next data. NOT PA1 is any address that is not in the same block as PA1. X Dont Care, n =number of Words to be programmed.

PhaseLen

gth


1st 2nd 3rd 4th 5th Final -1 Final

Add Data Add Data Add Data Add Data Add Data Add Data Add Data

Program3+n+1

555 AA 2AA 55 555 20 PA1 PD1 PA1 PD2 PA1 PAnNOTPA1

X

Verify n+1 PA1 PD1 PA1 PD2 PA1 PD3 PA1 PD4 PA1 PD5 PA1 PAnNOTPA1

X

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Figure 8. LightFlash Multiple Word Program Flowchart

Note: 1. Refer to datasheet for timings.

Write AAhAddress 555h

AI05554c

Start

Read StatusRegister

YES

NODQ0 = 0?

Write 55hAddress 2AAh

Write 20hAddress 555h

Write Data1(PD1)Start Address (PA1)

Write Data 2 (PD2)Address in Start Block

YES

NO

Read StatusRegister

Write Data n (PDn)Address in Start Block

YES

NO

Read StatusRegister

Write XXAny Address

NOT in Start Block

Read StatusRegister

NO

Write Data1 (PD1)Start Address (PA1)

Write Data 2 (PD2)Address in Start Block

NO

Read StatusRegister

Write Data n (PDn)Address in Start Block

Read StatusRegister

Write XXAny Address

NOT in Start Block

YES

Write F0hAddress XX

Exit (read mode)

DQ0 = 0?

DQ0 = 0?

DQ0 = 0?

DQ0 = 0?

DQ0 = 0?

Read StatusRegister

NO DQ6

toggling?

DQ5 = 1DQ4 = 0?

YES

Fail, VPP error

NO

ProgramPhase

YES

NODQ0 = 0?

YES

Setup time

exceeded?

EXIT (setup failed)

NODQ0 = 0?

Read StatusRegister

NO

Word

program timeexceeded?

YES

YES

NO

Wordprogram timeexceeded? YES

NO

Wordprogram timeexceeded? YES

DQ6toggling?

Read StatusRegister

NO

YES

YES

NO

Fail error

YES

NO

SetupPhase Verify

Phase

ExitPhase

Read StatusRegister

(tMWP-SETUP(1))

(tMWP-PROG(1))

(tMWP-PROG(1))

(tMWP-PROG(1))

YES

(tMWP-END(1))

(tMWP-TRAN(1))

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Further Commands on M29W160D/320D

Unlock Bypass Commands (Unlock Bypass, Unlock Bypass Program, Unlock Bypass Reset).

The Unlock Bypass commands are a set of commands used to speed up the Program access time on the

M29W160D/320D devices. They allow a single word to be programmed with a reduced number of BusWrite operations. They are typically used in applications where the Bus Write operations used to issue the

command can considerably increase the programming time. See Table 8 for the command sequence. Re-

fer to the datasheets for more details.

The Unlock Bypass commands are not available on the LightFlash devices.

Erase Suspend and Erase Resume. The M29W160D/320D devices feature an Erase Suspend com-

mand that can be used to temporarily suspend a Block Erase operation. The Erase Resume command is

used to restart the Erase operation. Refer to Table 8 for the command sequence.

Read CFI Query. The M29W160D/320D devices support the Common Flash Interface (CFI), a JEDEC

approved and standardized data structure that can be read from the Flash memory device. It allows a sys-

tem software to query the device to determine various electrical and timing parameters, density informa-

tion and functions supported by the memory. The Read CFI Query command is used to read data from

the Common Flash Interface (CFI) Memory Area. Refer to Table 8 for the command sequence.

The Common Flash Interface is not supported on the LightFlash devices.

Table 8. Further Commands

Note: X Dont Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal.

Command

Length


1st 2nd 3rd 4th 5th 6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Unlock Bypass 3 AAA AA 555 55 AAA 20

Unlock BypassProgram

2 X A0 PA PD

Unlock Bypass Reset 2 X 90 X 00

Erase Suspend 1 X B0

Erase Resume 1 X 30

Read CFI Query 1 AA 98

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STATUS REGISTER

Both sets of devices feature a Status Register which provides information on the current or previous Pro-

gram or Erase operation. The various bits convey information about the status and any errors of the op-

eration. They are output on DQ0-DQ7.

As a result of the different command sets used the Status Registers differ for the Standard Flash and Light-

Flash devices. Tables 9 and 10 show the Status Register bits for each set of devices, refer to the

datasheets for more detailed descriptions.

For LightFlash devices the VPP pin must be kept at VHH, to read the Status Register during Program

and Erase operations.

Data Polling Bit (DQ7)

The Data Polling Bit can be used to identify whether the Program/Erase Controller has successfully com-

pleted its operation. The Data Polling Bit is output on DQ7 when the Status Register is read.

On the LightFlash devices the Data Polling Bit is not available during a Multiple Word Program opera-

tion.

On the M29W160D/320D devices, the Data Polling Bit also gives information on the status of an Erase

Suspend operation.

Toggle Bit (DQ6)

The Toggle Bit can be used to identify whether the Program/Erase Controller has successfully completed

its operation. The Toggle Bit is output on DQ6 when the Status Register is read.

On the M29W160D/320D devices, the Data Polling Bit also gives information on the status of an Erase

Suspend operation and on the protection status of the blocks.

Error Bit (DQ5)

The Error Bit can be used to identify errors detected by the Program/Erase Controller. The Error Bit is set

to 1 when a Program, Block Erase or Chip Erase operation fails to write the correct data to the memory.If the Error Bit is set a Read/Reset command must be issued before other commands are issued. The Er-

ror bit is output on DQ5 when the Status Register is read.

VPP Status Bit (DQ4) (only for LightFlash)

The VPP Status Bit can be used to identify if any Program or Erase operation has failed due to a VPP error.

If VPP falls below VHH during any Program or Erase operation, the operation aborts and DQ4 is set to 1.

If VPP remains at VHH throughout the Program or Erase operation, the operation completes and DQ4 is

set to 0.

DQ4 is reserved on the M29W160D/320D devices.

Erase Timer Bit (DQ3)

The Erase Timer Bit can be used to identify the start of the Program/Erase Controller operation during aBlock Erase command. Once the Program/Erase Controller starts erasing the Erase Timer Bit is set to 1.

The Erase Timer Bit is output on DQ3 when the Status Register is read.

On the M29W160D/320D devices, the Erase Timer Bit is also useful to monitor the Program/Erase Con-

troller status when the Block Erase command is used to erase more than one block at a time.

Alternative Toggle Bit (DQ2)

The Alternative Toggle Bit can be used to monitor the Program/Erase controller during Block and Chip

Erase operations. The Alternative Toggle Bit is output on DQ2 when the Status Register is read.

It provides information on the block being erased (note that on the M29KW016E only one block can be

erased at a time with the Block Erase command) or a Block Erase error.

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On the M29W160D/320D devices, the Alternative Toggle Bit is also useful to monitor the Chip Erase op-

eration. It also provides information on the Erase Suspend status of the blocks when accessing the mem-

ory array in read mode. Refer to the datasheet for more detailed information.

Multiple Word Program Bit (DQ0) (only for LightFlash)

The Multiple Word Program Bit can be used to indicate whether the Program/Erase Controller is active or

inactive during Multiple Word Program. When the Program/Erase Controller has written one Word and is

ready to accept the next Word, the bit is set to 0.

Table 9. LightFlash Status Register Bits

Table 10. M29W160D/320DStatus Register Bits

Operation Condition DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ0 RB

Word Program Any Address DQ7 Toggle 0 0

Word ProgramError

VPP = VHH DQ7 Toggle 1 0 0

VPP< VHH DQ7 Toggle 1 1 0

Block/ ChipErase

Any Address 0 Toggle 0 1 Toggle 0

Erase ErrorVPP = VHH 0 Toggle 1 0 1 Toggle 0

VPP< VHH 0 Toggle 1 1 1 Toggle 0

Multiple WordProgram

P/E.C. active Toggle 0 1 0

P/E.C. inactive,waiting for next

Word Toggle 0 0 1

Multiple WordProgram

Error

VPP = VHH Toggle 1 0 1 0

VPP

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