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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET
Low on-resistance BVDSS 20V Capable of 2.5V gate drive RDS(ON) 50m Low drive current ID 20A Single Drive Requirement
Description
Absolute Maximum RatingsSymbol Units
VDS VVGS VID@TC=25 A
ID@TC=125 AIDM APD@TC=25 W
W/TSTG TJ
Symbol Value UnitRthj-c Thermal Resistance Junction-case Max. 4.8 /WRthj-a Thermal Resistance Junction-ambient Max. 110 /W
Data and specifications subject to change without notice 200218032
AP9915H/J
Parameter RatingDrain-Source Voltage 20Gate-Source VoltageContinuous Drain Current, VGS @ 4.5V 20
Continuous Drain Current, VGS @ 4.5V 16Pulsed Drain Current1 41Total Power Dissipation 26
-55 to 150Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.2
Thermal DataParameter
Storage Temperature Range
The Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectiveness.
12
G D S TO-252(H)
G DS TO-251(J)
G
D
S
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Electrical Characteristics@Tj=25oC(unless otherwise specified)Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.03 - V/
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A - - 50 m
VGS=2.5V, ID=5.2A - - 80 m
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.2 Vgfs Forward Transconductance VDS=10V, ID=6A - 13 - SIDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=125oC) VDS=16V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= - - nA
Qg Total Gate Charge2 ID=10A - 7.5 - nC
Qgs Gate-Source Charge VDS=20V - 0.9 - nC
Qgd Gate-Drain ("Miller") Charge VGS=5V - 4 - nC
td(on) Turn-on Delay Time2 VDS=10V - 4.5 - ns
tr Rise Time ID=10A - 49.5 - ns
td(off) Turn-off Delay Time RG=3.3,VGS=5V - 12 - ns
tf Fall Time RD=1 - 6 - ns
Ciss Input Capacitance VGS=0V - 195 - pF
Coss Output Capacitance VDS=20V - 126 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF
Source-Drain DiodeSymbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 20 A
ISM Pulsed Source Current ( Body Diode )1 - - 41 A
VSD Forward On Voltage2 Tj=25, IS=20A, VGS=0V - - 1.3 V
Notes:1.Pulse width limited by safe operating area.2.Pulse width
AP9915H/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature
0
10
20
30
40
50
0 1 2 3 4 5 6
V DS , Drain-to-Source Voltage (V)
I D ,
Dra
in C
urre
nt (A
)
T C =25o C
V GS =1.5V
2.5V
4.5V
3.5V
0
10
20
30
40
0 1 2 3 4 5 6 7
V DS , Drain-to-Source Voltage (V)
I D ,
Dra
in C
urre
nt (A
)
T C =150o C
V GS =1.5V
2.5V
3.5V
4.5V
30
40
50
60
1 2 3 4 5 6
V GS (V)
RD
S(O
N) (
m
)
I D = 6 A
T C =25o C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 150
T j , Junction Temperature (o C)
Nor
mal
ized
RD
S(O
N)
V GS =4.5V
I D =6A
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Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
AP9915H/J
0
10
20
30
40
50
60
0 50 100 150
T c , Case Temperature ( o C)
P D (W
)
0.1
1
10
100
1000
0.1 1 10 100
V DS (V)
I D (A
)
T c =25o C
Single Pulse
10us
1ms
10ms100ms
100us
0
5
10
15
20
25
25 50 75 100 125 150
T c , Case Temperature ( o C)
I D ,
Dra
in C
urre
nt (A
)
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Nor
mal
ized
The
rmal
Res
pons
e (R
thjc)
PDM
Duty Factor = t/TPeak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
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AP9915H/J
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature
0.2
0.45
0.7
0.95
1.2
-50 0 50 100 150
T j , Junction Temperature ( o C )
V GS(
th) (
V)
0.01
0.1
1
10
100
0 0.4 0.8 1.2 1.6V SD (V)
I S (A
)
T j =25o C
T j =150o C
10
100
1000
1 5 9 13 17 21 25 29
V DS (V)
C (p
F)
f=1.0MHz
Ciss
Coss
Crss
0
2
4
6
8
10
12
14
16
0 2 4 6 8 10 12 14 16 18 20
Q G , Total Gate Charge (nC)
V GS ,
Gat
e to
Sou
rce
Volta
ge (V
)
I D =20A
V DS =16V
V DS =20V
V DS =12V
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AP9915H/J
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
td(on) tr td(off) tf
VDS
VGS
10%
90%
Q
VG
5V
QGS QGD
QG
Charge
0.5x RATED VDS
TO THEOSCILLOSCOPE
-
+5 v
D
G
S
VDS
VGS
RG
RD
RATED VDS
TO THEOSCILLOSCOPE
-
+
D
G
S
VDS
VGS
ID
IG
1~ 3 mA
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