apm4546

Dual Enhancement Mode MOSFET (N-and P-Channel)

Copyright ANPEC Electronics Corp.

Rev. B.2 - Oct., 2005www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advisecustomers to obtain the latest version of relevant information to verify before placing orders.

APM4546K

Features

Applications

Pin Description

Ordering and Marking Information

N-Channel MOSFET

APM4546

Handling Code

Temp. Range

Package Code

Package Code K : SOP-8Operating Junction Temp. Range C : -55 to 150 CHandling Code TU : Tube TR : Tape & ReelLead Free Code L : Lead Free Device Blank : Original Device

APM4546 K : APM4546XXXXX XXXXX - Date Code

Lead Free Code

P-Channel MOSFET

Top View of SOP − 8

G1

S1

D1 D1(8) (7)

(2)

(1)D2

G2

S2

D2

(4)

(3)

(5) (6)

°

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin platetermination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldieringoperations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C

for MSL classification at lead-free peak reflow temperature.

• N-Channel

30V/7A,RDS(ON) =20mΩ (typ.) @ VGS = 10VRDS(ON) =27mΩ (typ.) @ VGS = 4.5V

• P-Channel

-30V/-5A,RDS(ON) =38mΩ (typ.) @ VGS =-10VRDS(ON) =46mΩ (typ.) @ VGS =-4.5V

• Super High Dense Cell Design

• Reliable and Rugged

• Lead Free Available (RoHS Compliant)

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered

Systems

Copyright ANPEC Electronics Corp.Rev. B.2 - Oct., 2005

www.anpec.com.tw2

APM4546K

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter N Channel P Channel Unit

VDSS Drain-Source Voltage 30 -30

VGSS Gate-Source Voltage ±16 ±16 V

ID* Continuous Drain Current VGS=10V (N) 7 -5 IDM* Pulsed Drain Current VGS=-10V (P) 25 -20

A

IS* Diode Continuous Forward Current 2 -2 A

TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150

°C

TA=25°C 2 PD* Power Dissipation

TA=100°C 0.8 W

RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W Note:

*Surface Mounted on 1in2 pad area, t ≤ 10sec.

APM4546K Symbol Parameter Test Condition

Min. Typ. Max. Unit

Static Characteristics

VGS=0V, IDS=250µA N-Ch 30 BVDSS Drain-Source Breakdown

Voltage VGS=0V, IDS=-250µA P-Ch -30 V

VDS=24V, VGS=0V 1

TJ=85°C N-Ch

30

VDS=-24V, VGS=0V -1 IDSS Zero Gate Voltage Drain

Current

TJ=85°C P-Ch

-30

µA

VDS=VGS, IDS=250µA N-Ch 0.8 1.5 2 VGS(th) Gate Threshold Voltage

VDS=VGS, IDS=-250µA P-Ch -0.8 -1.5 -2 V

VGS=±16V, VDS=0V N-Ch ±100 IGSS Gate Leakage Current

VGS=±16V, VDS=0V P-Ch ±100 nA

VGS=10V, IDS=7A N-Ch 20 26

VGS=-10V, IDS=-5A P-Ch 38 50

VGS=4.5V, IDS=5A N-Ch 27 36 RDS(ON)

a Drain-Source On-State Resistance

VGS=-4.5V, IDS=-4A P-Ch 46 60

mΩ


www.anpec.com.tw3

APM4546K

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

APM4546K Symbol Parameter Test Condition

Min. Typ. Max. Unit

Diode Characteristics

ISD=2A, VGS=0V N-Ch 0.8 1.3 VSD

a Diode Forward Voltage ISD=-2A, VGS=0V P-Ch -0.8 -1.3

V

Dynamic Characteristics b

N-Ch 2 RG Gate Resistance VGS=0V,VDS=0V,F=1MHz

P-Ch 10 Ω

N-Ch 790 Ciss Input Capacitance

P-Ch 900

N-Ch 130 Coss Output Capacitance

P-Ch 140

N-Ch 80 Crss

Reverse Transfer Capacitance

N-Channel VGS=0V, VDS=15V, Frequency=1.0MHz P-Channel VGS=0V, VDS=-15V, Frequency=1.0MHz P-Ch 75

pF

N-Ch 7 14 td(ON) Turn-on Delay Time

P-Ch 7 14

N-Ch 9 17 Tr Turn-on Rise Time

P-Ch 12 17

N-Ch 27 36 td(OFF) Turn-off Delay Time

P-Ch 42 56

N-Ch 6 12 Tf Turn-off Fall Time

N-Channel VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω P-Channel VDD=-15V, RL=15Ω, IDS=-1A, VGEN=-10V, RG=6Ω

P-Ch 19 26

ns

N-Ch 10 Qrr Reverse Recovery Charge

N-Channel ISD=7A, dISD/dt =100A/µs P-Channel ISD=-5A, dISD/dt =100A/µs P-Ch 9

nC

Gate Charge Characteristics b

N-Ch 18.1 24 Qg Total Gate Charge

P-Ch 18.2 24

N-Ch 1.7 Qgs Gate-Source Charge

P-Ch 2.3

N-Ch 2.2 Qgd Gate-Drain Charge

N-Channel VDS=15V, VGS=10V, IDS=7A P-Channel VDS=-15V, VGS=-10V, IDS=-5A P-Ch 1.6

nC

Notes:a : Pulse test ; pulse width≤300µs, duty cycle≤2%.

b : Guaranteed by design, not subject to production testing.


www.anpec.com.tw4

APM4546K

Typical Characteristics

ID -

Dra

in C

urre

nt (A

)

Drain Current

Tj - Junction Temperature (°C)

Safe Operation Area

VDS - Drain - Source Voltage (V)

Thermal Transient Impedance

Square Wave Pulse Duration (sec)

Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

N-Channel

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

TA=25oC

0 20 40 60 80 100 120 140 1600

2

4

6

8

TA=25oC,V

G=10V

1E-4 1E-3 0.01 0.1 1 10 301E-3

0.01

0.1

1

2

Mounted on 1in2 padR

θJA : 62.5 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0.01 0.1 1 10 1000.01

0.1

1

10

100

Rds(o

n) Lim

it

1s

TA=25OC

10ms

1ms

100ms

DC


www.anpec.com.tw5

APM4546K

RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)

Drain-Source On Resistance

ID - Drain Current (A)


Gate Threshold Voltage

VDS - Drain-Source Voltage (V)

ID -

Dra

in C

urre

nt (A

)

Output Characteristics

Transfer Characteristics

VGS - Gate - Source Voltage (V)

ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Thr

esho

ld V

olta

ge

Typical Characteristics (Cont.)

N-Channel

-50 -25 0 25 50 75 100 125 1500.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

IDS

=250µA

0.0 0.5 1.0 1.5 2.0 2.5 3.00

5

10

15

20

25

2.5V

2V

3V

VGS

= 4, 5, 6, 7, 8, 9, 10V

0 5 10 15 20 258

12

16

20

24

28

32

36

VGS

=10V

VGS

=4.5V

0 1 2 3 4 50

5

10

15

20

25

Tj=125oC

Tj=25oC

Tj=-55oC


www.anpec.com.tw6

APM4546K

VDS - Drain - Source Voltage (V)


Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)

VSD - Source - Drain Voltage (V)

Source-Drain Diode Forward

IS -

Sou

rce

Cur

rent

(A)

Capacitance Gate Charge

QG - Gate Charge (nC)

VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)


N-Channel

-50 -25 0 25 50 75 100 125 1500.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

RON

@Tj=25oC: 20mΩ

VGS

= 10V

IDS

= 7A

0.0 0.3 0.6 0.9 1.2 1.50.1

1

10

30

Tj=150oC

Tj=25oC

0 5 10 15 20 250

200

400

600

800

1000

1200

1400Frequency=1MHz

Crss Coss

Ciss

0 4 8 12 16 200

2

4

6

8

10V

DS=15V

IDS

=7A


www.anpec.com.tw7

APM4546K


Power Dissipation

Pto

t - P

ower

(W)


-ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area

-VDS - Drain - Source Voltage (V)

Thermal Transient Impedance

Square Wave Pulse Duration (sec)

-ID -

Dra

in C

urre

nt (A

)

P-Channel

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

TA=25oC

0 20 40 60 80 100 120 140 1600

1

2

3

4

5

6

TA=25oC,V

G=-10V

0.01 0.1 1 10 1000.01

0.1

1

10

100

Rds(on

) Lim

it

1s

TA=25OC

10ms

1ms

100ms

DC

1E-4 1E-3 0.01 0.1 1 10 301E-3

0.01

0.1

1

2

Mounted on 1in2 padR

θJA : 62.5 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


www.anpec.com.tw8

APM4546K


RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)


-ID - Drain Current (A)-VDS - Drain - Source Voltage (V)

-ID -

Dra

in C

urre

nt (A

)

Output Characteristics


Gate Threshold VoltageTransfer Characteristics

-VGS - Gate - Source Voltage (V)

-ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Thr

esho

ld V

olta

ge

P-Channel

0 4 8 12 16 2010

20

30

40

50

60

70

80

VGS

= -4.5V

VGS

= -10V

0 1 2 3 4 50

2

4

6

8

10

12

14

16

18

20

Tj=125oC

Tj=25oC T

j=-55oC

-50 -25 0 25 50 75 100 125 1500.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

IDS

= -250µΑ

0.0 0.5 1.0 1.5 2.0 2.5 3.00

2

4

6

8

10

12

14

16

18

20

-2.5V

-2V

-3V

VGS

= -4,-5,-6,-7,-8,-9,-10V


www.anpec.com.tw9

APM4546K



Nor

mal

ized

On

Res

ista

nce

Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V)

Source-Drain Diode Forward

-IS -

Sou

rce

Cur

rent

(A)

-VDS - Drain - Source Voltage (V)

C -

Cap

acita

nce

(pF)

Capacitance Gate Charge

QG - Gate Charge (nC)

-VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)

P-Channel

-50 -25 0 25 50 75 100 125 1500.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

RON

@Tj=25oC: 38mΩ

VGS

= -10V

IDS

= -5A

-0.5 0.0 0.5 1.0 1.5 2.00.1

1

10

20

Tj=150oC

Tj=25oC

0 5 10 15 20 250

200

400

600

800

1000

1200

1400Frequency=1MHz

Crss

Coss

Ciss

0 4 8 12 16 200

2

4

6

8

10V

DS= -15V

ID= -5A


www.anpec.com.tw10

APM4546K

Packaging Information

Millimeters Inches Dim

Min. Max. Min. Max.

A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ 1 8° 8°

HE

e1 e2

0.01

5X45

D

AA1

0.004max.

1

L

SOP-8 pin ( Reference JEDEC Registration MS-012)


www.anpec.com.tw11

APM4546K

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

t 25 C to Peak

tp

Ramp-up

tL

Ramp-down

tsPreheat

Tsmax

Tsmin

TL

TP

25

Te

mp

era

ture

Time

Critical ZoneTL to T P

°

Reflow Condition (IR/Convection or VPR Reflow)

Classification Reflow Profiles

Physical Specifications

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) 3°C/second max. 3°C/second max.

Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts)

100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds

Time maintained above: - Temperature (TL) - Time (tL)

183°C 60-150 seconds

217°C 60-150 seconds

Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual Peak Temperature (tp)

10-30 seconds 20-40 seconds

Ramp-down Rate 6°C/second max. 6°C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface.


www.anpec.com.tw12

APM4546K

Carrier Tape & Reel Dimensions

t

Ao

E

W

Po P

Ko

Bo

D1

D

F

P1

Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures Package Thickness Volume mm3

<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Table 2. Pb-free Process – Package Classification Reflow Temperatures

Package Thickness Volume mm3 <350

Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*

≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level.

Classification Reflow Profiles(Cont.)

Test item Method DescriptionSOLDERABILITY MIL-STD-883D-2003 245°C,5 SECHOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°CPCT JESD-22-B, A102 168 Hrs, 100% RH, 121°CTST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Reliability Test Program


www.anpec.com.tw13

APM4546K

Customer Service

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per ReelSOP- 8 12 9.3 2500

Carrier Tape & Reel Dimensions(Cont.)

A

J

B

T2

T1

C

Application A B C J T1 T2 W P E 330±1 62 ± 1.5 12.75 + 0.1

5 2 + 0.5 12.4 +0.2 2± 0.2 12 + 0.3

- 0.1 8± 0.1 1.75± 0.1

F D D1 Po P1 Ao Bo Ko t SOP-8 5.5 ± 0.1 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013

(mm)

Anpec Electronics Corp.Head Office :

No.6, Dusing 1st Road, SBIP,Hsin-Chu, Taiwan, R.O.C.Tel : 886-3-5642000Fax : 886-3-5642050

Taipei Branch :7F, No. 137, Lane 235, Pac Chiao Rd.,Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.Tel : 886-2-89191368Fax : 886-2-89191369

Documents

apm4546