Author Index - Assetsassets.cambridge.org/97815589/90517/index/9781558990517... · 2013. 1. 31. · 1037 Author Index Abernathy, C.R., 477, 855 Adamski, Joseph A., 1007 Aers, G.C.,

1037

Author Index

Abernathy, C.R., 477, 855Adamski, Joseph A., 1007Aers, G.C., 931Agarwal, Anuradha M., 543Ahem, Brian S., 1007Ahrenkiel, Richard K., 781Akiyama, I., 139Alaya, S., 163, 747Allen, E.L., 685Altelarrea, H., 785Anderson, Robert A., 431, 455Anderson, W.A., 993Antonelli, A., 523Arora, B.M., 185, 203Arriga, 0., 139Asakura, H., 115Aucouturier, M., 401Awadelkarim, 0.0., 283, 377

Baba, T., 741Bachowski, Stephen, 1007Bajaj, K.K., 313Bakry, Assem M., 781Ballutaud, D., 401Banerjee, S., 185Bao, X.J., 1027Baraff, G.A., 805Baranowski, J.M., 821Barbier, D., 567Barczynska, J., 179Bardin, T.T., 979Barnes, P.A., 979Barry, J., 955Beckett, D.J.S., 221Bedair, S.M., 647Benson, B.W., 29 5Benyattou, Taha, 69Bergman, J.P., 325, 337Bernholc, J., 523Beye, A.C., 115, 121, 139Bliss, D.E., 815Bode, M., 639Booker, G.R., 907Borenstein, J.T., 633Borghesi, A., 919Borrego, J.M., 831Bosch, J., 785Bourgoin, J.C., 163, 747, 799Breitschwerdt, A., 39 5Brennan, T.M., 773Brower, K.L., 145Brown, A.R., 555Brown, G.J., 157, 809Brown, Robert A., 615Buda, F., 383

Budil, Matthias, 535

Cabaniss, G., 855Canut, B., 927Car, R., 383Carmo, M.C., 273Carter, C.B., 709Caruso, R., 489Chadi, D.J., 765Chakrabarti, U.K., 489Chandvankar, S.S., 203Charasse, Marie-Noelle, 69Charbonnier, M., 927Chaussemy, G., 927Chen, Samuel, 983Chen, W.M., 303, 377Cheng, A.Y., 1027Cheng, K.Y., 193Chevallier, J., 793Chiarotti, Guido L., 383Clarke, D.R., 425Clevenger, L.A., 961Cole, M.W., 987, 993Compaan, A., 759Corbett, J.W., 633Cotell, CM., 861Cowern, N.E.B., 605

Das, K., 1011Dautremont-Smith, W.C., 501Davies, G., 273De Mierry, P., 401De, Bhola N., 965Deal, Michael D., 653, 685,

691DeAvillez, R.R., 961Deicher, M., 245Deleo, G.G.f 367Dischler, B., 875Dornen, A., 21, 239Dow, John D., 349Droopad, R., 9 07Dube, C , 459Dudley, M., 1031Duesbery, M.S., 941Dunham, Scott T., 543Dupuis, R.D., 867Dutta, M., 987

Eichhammer, Wolfgang, 915Elcess, K., 197Emanuelsson, P., 307Ennen, H., 875Estle, T.L., 407

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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerIndexMore information

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1038

Fahey, P., 529Fang, Zhaoqiang, 189Feng, S.L., 747Fischer, D.W., 827Florez, L.T., 709Fowler, W.B., 367Franciosi, A., 665Fujisaki, Yoshihisa, 1017Fujisawa, T., 741Fukuda, T., 969Fukushima, H., 1001

Gaiduk, P., 601Galtier, Pierre, 69Garone, P.M., 591Geddo, M., 919Gehlhoff, W., 307Gerrard, N.D., 867Ghandhi, S.K., 95, 831Gibson, J.M., 861Gislason, H.P., 127Glaser, E., 753Goldman, L.M., 627Goldys, E., 179Gosele, Ulrich M., 671, 715Gossard, A.C., 325, 331, 337Goto, Shigeo, 1017Griess, M., 945Griffin, James, 881Grimmeiss, H.G., 3, 51, 307Grossmann, G., 51Griinebaum, D.f 21Guido, L.J., 697Guillot, Gerard, 69Gurer, E., 29 5

Ha, N.T., 501, 867Haegel, N.M., 63Haller, E.E., 15, 133, 815Hallin, C , 337Hamm, R.A., 861Hanak, Thomas R., 781Hara, A., 969Harbison, J.P., 709Harrison, Joseph G., 89Hartiti, Bouchaib, 905Hashimoto, Fumio, 291Haugstad, G.f 665Heinrich, Michael, 535Henry, A., 283, 303Henry, M.O., 273, 299Herman, M.H., 197Herrero, C.P., 395Heyman, J., 15Hiesinger, P., 875Higgs, Victor, 57Hilton, Robert M., 1007Hirai, I., 969Hj almarson, Harold P., 361,

773

Hobson, W.S., 63, 489, 855Holonyak, Jr., Nick, 697Holtz, P.O., 325, 331, 337Honma, N., 951Hopkins, L.C., 861Hoshino, M., 901Hruska, Jane, 965

Ichimura, Masaya, 549Ishibashi, Tadao, 887Ishituka, K., 121Ito, Hiroshi, 887Itoh, Y., 1001Iyer, S.S., 343

Jackman, T.E., 931Jackson, Koblar, 89Jackson, S.L., 193Jacobson, D.C., 621Jager, W., 659James, R.B., 1027Janssen, K.T.F., 605Janzen, E., 169, 207, 303Jendrich, U., 579Jeng, Nanseng, 543Jeong, J., 151Jiao, K.L., 993Johnson, S.T., 975Joos, B., 941Jos, H.F.F., 605

Kahen, K.B., 677, 681Kalejs, J.P., 459Kamijoh, K., 139Kaminski, Pawel, 75Kamiura, Yoichi, 291Kao, Y.J., 63Katayama-Yoshida, H., 81Kato, T., 901Keilmann, F., 133Keller, R., 245Kennedy, T.A., 33, 753Kiefl, R.F., 407Kienle, R., 21, 239Kightley, P., 57Kim, Y., 639Kimerling, L.C., 151Kirita, H., 1001Kleverman, M., 3, 51, 169, 207Ko, Kei-Yu, 983Koch, U., 6 09Koidl, P., 875Kopf, R.F., 793Kozuch, D.M., 367, 477Krause, S., 955KringhcSj, P., 585K u k i m o t o , H . , 7 4 1Kumar, S . N . , 9 2 7K i i r n e r , W. , 2 3 9K u r t z , S . R . , 7 7 3






1039

Kutsuwada, N., 115, 139

Lambert, G., 109Lareau, R.T., 993Larsen, A. Nylandsted, 585,

601Larsen, K. Kyllesbech, 601Latushko, Ya.I., 277Laugier, A., 927Lawrence, D.J., 677Lee, J.W., 501Lee, K.M., 151Lee, S.-Tong, 9 83Legoues, F.K., 437Legros, R., 793Lehman, J.L., 987Lever, R.F., 561Lightowlers, E.C., 57, 273,

299Lindefelt, U., 287LindstrSm, J.L., 283, 377Linnarsson, M., 127, 169, 207Liu, H.-Y., 1031Liu, Joyce C , 437Lopata, J., 367, 477, 489,

501Luftman, H.S., 501, 867Lundgren, K.R., 221Luysberg, Martina, 659

Ma, E., 961Maaref, H., 163, 747Magno, R., 789Maier, M., 875Makita, Y., 115, 121, 139Manasreh, M.O., 175, 809, 827Maroudas, Dimitrios, 615Marrakchi, G,, 163Marwick, A.D., 437Mathiot, D., 401Matlock, J.H., 597Matsumori, T., 121, 139Matsumoto, T., 901Mayer, K.M., 115, 121, 139McCollum, M.J., 193McDermott, B.T., 647McGuigan, K.G., 273, 299Mehrer, H., 659Mei, P., 709Merk, E., 15Merz, J.L., 325, 331, 337Michel, D.J., 941Michel, J., 151Milnes, A.G., 189, 997Mitchel, W.C., 157Mitchell, I.V., 931Mizuta, M., 741, 753MShrle, Martin, 495Moller, H.J., 579, 945Molnar, B., 753

Moncorge, Richard, 69Monemar, B., 39, 85, 127, 169,

207, 257, 261, 265, 283,303, 325, 331, 337, 377

Monteiro, Teresa, 215Mooney, Patricia M., 729Morante, J.R., 785Morehead, F.F., 561Mori, M., 121Mostefaoui, R., 793Muller, Jean-Claude, 915Munakata, C , 951Murray, Jeffrey J., 691Murray, R., 555Myers, Leary, 881Myers, N.C., 609

Nakayama, Y., 121Narasimhan, K.L., 269Nazare, M.H., 299Newman, R.C., 555Nichols, C.S., 425Nissen, M.K., 221Nolte, D.D., 815Norman, A.G., 907Northrop, G.A., 27, 343Nygren, E., 627

Oda, T., 139Oehrlein, G.S., 377Ogasawara, M., 951Oguchi, T., 81Ohnishi, N., 115, 121Ohsawa, A., 969Olajos, J., 3Qmling, P., 307Ortale, C , 1027Ottolini, L., 919Ourmazd, A., 639Ozeki, M., 901

Pajot, Bernard, 465Palmstrom, C , 709Panish, M.B., 861Pantelides, Sokrates T., 511Park, B., 621, 627Park, In-Shik, 211Parker, S.D., 907Parrinello, M., 383Pearah, P.J., 175, 197Pearton, S.J., 367, 477, 489,

501, 855Pederson, Mark R., 89Pellegrino, Joseph, 881Pensl, G., 21Pereira, Estela, 215Perez, A., 785Perret, M., 659Peterkin, Jane, 965Petersen, J.W., 585






1040

Peterson, D.L., 677Petrov, V.V., 277Pfeiffer, W., 245Piaggi, A., 919Pinzone, C.J., 867Pivac, B., 919Piano, M.A., 193Plummer, J.D., 685Poate, J.M., 621Potzl, Hans W., 535Premchandran, V., 269Pronko, J.G., 979

Radzimski, Zbigniew, 449Raisanen, A., 665Rajbenbach, H., 837Rajendran, S., 459Rajeswaran, G., 677, 993Ralston, J.D., 875Ramdani, J., 647Ramsteiner, M., 875Ren, Shang Yuan, 349Reynolds, Donald C , 313Ridgway, M.C., 975Robinson, H.G., 653Ronay, Maria, 573Rossabi, J., 987Rozgonyi, George A., 449Rune, G.C., 331

Sadwick, Larry P., 1021Samitier, J., 785Sarkar, D., 269Sasaki, T., 81Sawyer, William D., 923Schad, R.G., 573Schlesinger, T.E., 189, 997,

1027Schlette, A., 239Schmalzlin, Jorg, 923Schmid, U., 609Schmitz, K.M., 993Schneider, J.W., 407Schultz, P.J., 931Schwab, C , 407Schwartz, P.V., 591Schwarz, S.A., 591, 709Seager, Carleton H., 431, 455Seghier, Djelloul, 69Seibt, M., 945Sengupta, D., 975Seong, Tae-Yeon, 907Shan, Lei, 189Sharma, D.K., 203, 269Sharma, R., 993Shelby, R., 789Shen, Jun, 349Shibata, H., 115, 121, 139Shimizu, A., 139Shimizu, H., 951

Shin, Ki-Chul, 211Siffert, Paul, 915Simpson, P.J., 931Skudlik, H., 245Smith, D.D., 987Smith, L.M., 95Sopori, Bhushan, 449Spaepen, F., 621, 627Spencer, Michael, 881Srivastava, A.K., 185, 203,

269Stavola, Michael, 367, 477Steiner, D., 245Stella, A., 919Stevenson, David A., 653, 691Stillman, G.E., 193, 483Stockman, S.A., 193Stolwijk, N.A., 21, 659Stolz, P., 21Stradling, R.A., 907Streit, Dwight C., 1021Stringfellow, G.B., 893Sturm, J.C., 591Stutzmann, M., 395Suezawa, Masashi, 233Sugiyama, H., 139Sugiyama, Y., 121Sumino, Koji, 233Sundaram, M., 325, 331, 337Sveinbjornsson, E.O., 127Svensson, B.G., 261Svensson, J.H., 261, 265Swaminathan, V., 489Szafranek, I., 193, 483

Tacano, M., 121Takahashi, T., 121Takai, M., 1001Takechi, M., 901Takeda, Akihiro, 549Takeda, Michihiko, 549Takeyama, T., 937Tan, T.Y., 715, 983Tan, Teh Y., 671Tanoue, H., 139Theiler, T., 133Theis, Thomas N., 729Theodore, N.D., 709Thewalt, M.L.W., 221, 303Thilderkvist, A., 51Thompson, C.V., 961Thonke, K., 21, 239Timmons, Michael L., 7 81Tin, C.C., 979Trautman, P., 821Trombetta, J.M., 33Tsai, Min-Hsiung, 349Tu, C.W., 793Tu, K.N., 961Tucker, J.H., 555






1041

Tulchinski, D.f 633

Ueda, 0., 901Uekusa, S.f 139Urban, K., 659

Valley, G.C., 837Van de Walle, Chris G., 419Van Vechten, J.A., 609Venkatasubramanian, R., 95,

831Visitserngtrakul, S., 955von Bardeleben, H.J., 163,

747, 799, 837

Wachters, A.J.H., 605Wada, Takao, 549Wagner, A.V., 627Wall, A., 665Walukiewicz, W., 815, 845Wang, P.D., 907Ward, I.D., 197Watkins, G.D., 367Weber, Jorg, 443, 923Weman, H., 257Wichert, Th., 245Wijaranakula, W., 597Williams, R.L., 907Wittmer, M., 529Wolford, D.J., 27, 95, 343Wong, D., 997Woollam, John A., 965Wu, D.T., 627Wu, J., 1031

Xiao, Zhigang, 449Xu, Hongqi, 287

Yamada, A., 115, 121, 139Yao, G.-D., 1031Yao, H.D., 759Yoneta, Minoru, 291Yoshino, J., 741Yu, Shaofeng, 671, 715Yuzun, Gao, 937

Zaidi, M.A., 163Zazoui, M., 747Zemanski, J.M., 975Zemon, S., 109Zhang, S.B., 765Zhao, Q.X., 337Zhao, Yong, 965Zheng, Longru, 9 83, 993Zhou, Tian-Qun, 449Zhu, J., 567Zundel, T., 443











1043

Subject Index

absorbance, infrared, 367absorptionhigh-resolution, 15infrared, 277, 465, 477,

556, 809, 827, 919intersubband, 875intracenter, 821model, Langmuir-Rideal, 831optical, 21, 179, 265, 805,

827vibrational, 477

acceptor(s), 483double, 21, 169-like defect, shallow, 193shallow, 331zinc, 15

activationanalysis, 1001energies, 511

thermal, 7 81AES, 697, 993Al, 277AlGaAs, 109, 729, 747, 765,

773, 781, 793, 799, 881,893, 1021

AlGalnP, 893alloy clustering, 907amorphous layer, 975amphoteric

defect model, 845impurity, 115

annealing, 175, 233, 489,523, 997classical thermal, 915furnace, 585-induced activation, 139pulsed-laser, 759

anti-bonding site, 465-phase boundary, 901

antisite, 39, 151arsenic, 821, 827

ashing, 965atomic

layer epitaxy (ALE), 647order, 893ordering, 9 07

Augerdepth profile, 437effect, 69recombination, 265

B-acceptor pair, 443band-to-band, 95bandgap narrowing, 759

Be-doping, 653, 881

ultra-high, 861-implanted, 151

beam-coupling gain, 837bicrystals, 579

Ge, 945binding energy, 437bond-centered location, 465boron, 269, 367bound

excitons, 21, 221, 295, 303,313, 325, 331, 343

multi-exciton complex, 221Bragg-Laue geometry, grazing,

1031bulk moduli, 425buried layer, 543

antimony, 597marker, 529

capacitively measured, 951capture

cross section, 781, 793hot-electron, 729rates, 729

carbon, 197, 291, 887-group V pairing, 295incorporation, 831

carrieractivation, 983compensation, 881lifetime, minority, 95, 189,

951scattering, 845

Cdi_xMnxTe, 665CdTe, 665charged particle activation

analysis (CPAA), 1001chemical etching, 1027chemo-mechanical polishing,

245chloride-VPE, 901cluster formation, 605clustering

effects, 383model, dynamic, 605

compensation, 133complex

defect, 139, 269, 303formation, 633






1044

complexes, 39S-related, 303substitutional, 39vacancy-

impurity, 39phosphorus, 287

compositionally gradedregion, 489

compound semiconductors, 845compression, 425concerted exchange, 511, 523conductance, source drain,

789conf iguration

coordinate diagram, 163,295, 729

local atomic, 741constant-force-of-

interaction, 615contact(s)

metals, 1027ohmic, 993

contaminants, 197internal, 915

Cr, 567-B pairs, 239interstitial, 239

critical temperature, 893cross-bridge Kelvin (CBK),

993crystal-field splitting, 21Cu(-), 197, 273

diffused, 169doped, 221, 295pairing, 239precipitation, 579

CuBr, 407CuCl, 407Cu3Si, 573CVmeasurement, 1021profiling, 855, 927

etch, 685

damage characterization, 9 87dangling bonds, 1017decay time, 32 5deep levels, 27, 75, 157,

185, 277, 343, 729defect (s), 85, 927, 997, 1027

[113}, 955axial isoelectronic, 295characterization, 1031dopant-related, 709Ei, 915E2, 915E3, 915Ec, 915electron irradiation, 937extended, 257

Ge-related, 179hydrogen-induced, 449intrinsic, 845levels, 979native, 845noble-gas, 923process-induced, 915reactions, 845rod-like, 291Sn-vacancy, 261

delta-doped, 855lattice parameter (DLP)model, 893

depletion layer width, 951deuterium diffusion profile,

401diamagnetic shift, 313diamond, 89differential

scanning calorimetry (DSC),961

transient spectroscopy(DITS), 785

diffusion, 601, 639, 653, 677,855Al-Ga inter-, 697anomalous, 605, 681

dopant, 9 83vacancy, 597

arsenic, 535asymmetric, 529atomic, 609Au, 609, 627B, 605Be, 715coupled defect-impurity, 561dopan t impur i ty, 511enhanced, 5290, 555

hydrogen, 395, 401, 633impurity, 523inter-, 621, 639, 715low-temperature, 529Mn, 665nonequilibrium condition,

535one-sided, 609self, 511, 523, 573, 715Si, 671, 677, 691, 715Si-Si pair, 671Sn, 685substitutional interstitial,

653transient, 605volume, 549Zn, 659, 681, 715






1045

diffusioncoefficient, 383, 511, 535,

621, 627, 697, 715lengths, hole, 997model, 401modeling, 535profiles, calculated, 401

diffusivity, 567Ga-vacancy, 677interstitial, 543tensor, 615

direct-gap semiconductor, 95dislocated, 459dislocation(s), 57, 941, 1007

edge, 1031loops, 659partial, 941secondary, 945

disorderingdopant-induced, 715superlattices, 715

dissociation energy, 465DLTS, 163, 277, 291, 567,

729, 741, 781, 785, 789,815, 915, 979, 997

donor(s)generation, oxygen, 597neutral, 313new, 291OH, 133shallow, 33, 133, 753substitutional, 729

dopant atomsGroup-V, 277substitutional, 529

doping, 881, 887electron-beam, 549heavy, 759n-type, 867p-type, 867,881

DX center, 729, 741, 747,753, 759, 765, 773, 781,785, 789, 793, 799

EBIC, 459EDX, 901effective-mass

hole, 21state, 747, 799

EL2, 211, 799, 805, 809, 815,821, 827, 831, 837, 979formation, 831-like defect, 175

EL3, 211, 979EL6, 163, 979electrical

neutralization, 465properties, 121

electronbeam electroreflectance

(EBER), 197gas, 2-dimensional, 337irradiation, 261, 265, 277,

367microscopy, analytical, 659

electronicstructure, 81transitions, 261

emissionbarrier, electron, 741rates, 729

EPR, 233, 307, 407, 419, 799Er-doped, 69exchange broadening, 33excited states, 15, 21excitons, 95, 109, 115, 273

Fermienergy, 845-level

effect, 671, 697stabilization energy, 845

resonance, 367Fick's second law, 653first-principles calculations,

419, 425, 511fourier transform

photoluminescencespectroscopy (FTPLS), 221

Frank-Condon shift, 261freeexcitons, 325, 361

heavy-hole, 313-to-bound, 313

FTIR, 169, 207, 221, 919

GaAs, 95, 109, 115, 121, 127,163, 169, 175, 189, 193,207, 221, 349, 407, 465,477, 483, 549, 653, 659,671, 677, 681, 685, 691,715, 759, 765, 799, 809,815, 821, 827, 837, 845,855, 867, 881, 975, 979,983, 987, 993, 997, 1001,1011, 1021heavilyBe-doped, 121Ge-doped, 115

LEC, 197semi-insulating, 75, 157,

189undoped, 211

GaAs/AlGaAs, 313, 325, 331,337

GaAs/Ge, 647GaAs/InP, 489GaAsSb, 893






1046

GaAs/Si, 1031GalnP, 893GaP, 145, 179, 215, 407

S-doped, 145GaPSb, 893gas bubbles, 449Ge, 133, 407

amorphous, 621ultra-pure, 133

gettering, 915, 951, 969gradient, electric field, 245grain boundary, 211, 579, 945Green's function, 511

H2molecules, 401pairing, 401

H-band luminescence, 337Hall measurement, 203, 881,

1021HCX, 997heat of solution, 425HEMTS, 789heterojunctions, 337

GaAs/Ge, 647heterostructures, 1011

GaAs/AlGaAs, 753modulation-doped, 845Si/Ge, 523Si/SiGe, 343

high-dose, 931resolution spectroscopy, 3

hole-hole coupling, 21homostructures, 95hot carriers, 85HREM, 955Huang-Rhys factor, 261HVEM, 937hydrogen, 245, 383, 401, 419,

425, 437, 443, 459, 511-acceptor pairs, 245, 483-B pairs, 395, 401bond, 465charge state, 425complexes, 465diffusion, 455, 465-donor complexes, 477-impurity complexes, 465isolated, 407-0 interaction, 555pairs, 443passivation, 245, 367, 431,

459, 477, 489plasma, 555

neutralization, 465-related complexes, 377segregation, 437-shallow-acceptor, 443-Sn complex, 477

hydrogenated, 483hydrogenation, 431, 449, 455,

465DX center, 793ion-beam, 455plasma, 489, 501

hydrogenic states, 729hyperfine parameters, 419

immiscibility, 893implantation, 139, 621

hydrogen, 915iron, 919MeV, 979oxygen, 975, 979Sb, 931Si, 983Sn, 585, 685

impurities, 197, 927, 1027metal, 915

impurity-induced layerdisorder (IILD), 697

In11 1, 245InAsSb, 893, 907In-Cu pairs, 245indiffusion, Mn, 665in-doped, isoelectronic, 189infrared

far, 133, 221mid, 221

InGaAs, 495, 861, 887InGaAs/InP, 203InGaAsP, 893InGaAsSb, 893InGaP, 901InP, 33, 139, 185, 465, 501,

861, 867, 1007semi-insulating, 75

InPSb, 893interaction potential, 615interface(s), 437, 951

(115), 955Al/Si, 437GaAs/AlGaAs, 337, 639roughness, 3 61traps, 951

interfacial luminescence, 489interstitial(s), 561, 639

Al, 277Be, 881donor, 881iron, 51mechanism, 523mediated, 511self, 609, 715Zn, 681

ion-beam etching, 923implantation, 601, 653transit, 431






1047

ionization energy, 747iron, 51. 185, 919-B pairs, 2 33indium pairs, 307

isothermal transientspectroscopy (ITS) 785

isotopeeffect, 465shift, 367

Jahn-Teller, 169junction

impedance, 951leakage current, 951p-n, 951

Kaufman plasma, 449kick-out

mechanism, 549, 659, 715model, 609

kinetic model, 633Kyropoulos growth, 1007

laser applications, 993lattice

image, 437relaxation, 81, 729, 799,

805large, 747, 773

lifetime, 95measurement, 215

light-emitting-diode, blue,81

limited-reaction processing,591

lithium, 81, 127local density

approximation (LDA), 89functional formalism, 81

LPE, 901, 907

magnetic field, axial, 1007MBE, 69, 115, 121, 193, 875,

887, 893, 907, 927, 1021gas-source, 861hydride-source, 861-regrown, 987

membrane structure, 543mercuric iodide (Hgl2), 1027metal contamination, 57metastability, 295, 407, 799,

815metastable, 827

properties, 265Mg, 653migration energy, 937miscibility gaps, 893, 907mixing, 709

luminescence, 215Mn, 185, 197, 207, 215

mobilities, 881, 887, 907,1007free-carrier, 845

mobility-lifetime product, 837MOCVD, 63, 867, 901, 907modulated structure, 901molecular dynamics, 941

simulations, ab initio, 383moment analysis, 615monohydride groups, 383Monte-Carlo simulation, 609

dynamic, 615MGss$auer spectroscopy, 579,

585MQW, GaAs/AlGaAs, 875multilayers, 961

artificial, 621, 627muon, 407

spinresonance, 419rotation, 407

muonium, 419centers, 4 07

Murali and Murarka theory, 965

neutralization, 443(NH4)2S, 1017nitridation, 535nitrogen, 89nondestructive inspection, 951nonradiative, 69nuclear

detectors, 1027resonant reaction, 437

ODMR, 33, 39, 81, 145, 151,303, 377, 753donor-acceptor pair, 33

OMMBE, 855OMVPE, 831, 855, 893optical ionization, 15ordered

alloy, 741structures, 893, 901

orderingCuPt-type, 901, 907short-range, 893

oscillator strength, giant,361

oscillatory structure, 63oxidation, 543

dry, 9 65mechanism of, 965

oxides, ultra thin, 965oxygen, 151, 919, 969, 975,

979, 1001atomic, 965






1048

paircorrelation function, 383recombination, 3 3

pairingCr-B, 567defect-impurity, 561reaction, 567SiQa-vGa< 677

Pankove model, 367passivation, 633

acceptor, 483, 501dopant, 455nonradiative center, 489Zn-acceptor, 495

pattern recognition, vector,639

Pd/Au:Be, 993Pd2Si, 529PECVD, 501penetration depth,

kinematical, 631perturbed angular

correlation, 239phase

separation, 907-volume grating, 827

phonon density of states, 383phosphorus, 89, 221, 269photo-

capture, 773induced

changes, 809transient spectroscopy

(PITS), 75thermal ionization

spectroscopy (PTIS), 3,133

photoconductivity, 133, 179,239, 809persistent, 773spectral, 157

photocurrent, 951, 997photoelectron spectroscopy,x-ray, 931

photoemission, 665photoionization, 773

cross section, 793photoluminescence, 27, 33,

57, 69, 109, 115, 121, 127,139, 157, 163, 169, 185,193, 203, 207, 215, 221,239, 257, 269, 273, 277,295, 303, 313, 325, 331,337, 343, 361, 377, 483,489, 549, 697, 747, 759,907, 923, 1017, 1021, 1027D-band, 57decay, 3250.8 eV band, 163

excitation, 63, 69, 139,221

magneto-, 221resonant, 313temperature-dependent, 313time-resolved, 95

photon beam, chopped, 951photoquenching, 809, 827photorefractive effect, 837photovoltage

AC, 951surface, 951

planardefects, (111), 449-doped structures, 1021

plastically deformed, 57platelets, 257point(-)defect(s), 3

charged, 691gradient model, 671native, 639nonequilibrium, 715

polaron measurement, 881polycrystalline, 579Poole-Frenfel, 747, 785positron, 927

annihilation, 927slow, 927

potential well, strain-induced, 257

preannealing, low-temperature, 291

precipitates, 257, 659, 861,915, 969oxygen, 597

pressurehydrostatic, 27, 523, 741,

747, 799, 805, 815uniaxial, 805

pseudo-donor model, 265pseudopotential method

ab initio self-consistent,765

norm-conserving, 81

quantum(-)welKs), 313, 325,331, 349, 875heterostructures (QWH), 697

quasi-steady-state, 561quenching, 969

radiationdamage, 343-induced, 277

radiative efficiency, 95radioactive acceptor, 245Raman scattering, 875, 9 87






1049

rapid thermalannealing (RTA), 585, 601,

681, 931, 1021processing (RTP), 591, 915

reaction kinetics, first-order, 233

recombinationnonradiative, 145radiative, 295

recovery, 827reflectance spectroscopy,

infrared, 39 5regrowth kinetics, 975regular solution model, 893ReSi2, 573RHEED, 1017RIE, 495, 987rocking curve, 1031Rutherford backscattering

(RBS), 585, 601, 923, 931,961, 975

Rydberg series, 51

S-diffused, 303scanning photon microscope

(SPM), 951Schottky barrier, 1021segregates, 861segregation coefficient, 1001selectively doped, 741SEM, 697SEM/EBIC, 449semi-magnetic semiconductor,

665Si

compensation, 875-dopant behavior, 875

SiGe alloys, 591silicidation, 961silicides, 573metal, 579transition-metal, 529

silicon, 15, 27, 51, 57, 221,233, 239, 261, 269, 277,287, 291, 303, 307, 367,377, 383, 395, 401, 407,419, 425, 431, 437, 449,455, 459, 511, 523, 535,543, 549, 561, 567, 573,579, 585, 591, 597, 601,605, 609, 633, 915, 923,927, 931, 937, 941, 965,969amorphous, 621, 627, 961-on-insulator, 955, 1011-on-sapphire, 1011

SIMOX, 955

SIMS, 401, 437, 501, 529,591, 605, 633, 647, 653,685, 691, 697, 855, 861,867, 919, 927, 983

Si/SiGe, 343Sn, 261, 867snow-plow effect, 529solar cells, 997solid solubility, 585spectrophotometry, infraredmultiple internalreflection, 449

spin-density functional, 419Hamiltonian, 377

spinodal decomposition, 901spreading resistancemeasurement (SRM), 659

Stillinger-Weber potential,941

Stokes shift, 765strain, 523binding, 273energy, 893heteroepitaxial, 75 3hydrostatic, 273

stress, 465, 789uniaxial, 273, 815, 821

substitutionality, 585subsurface layers, thin, 1031sulfur-coated, 1017superlattices, 343GaAs/AlGaAs, 709monolayer, 901

supersaturation, 715interstitial, 535oxygen, 591vacancy, 535

surfacealloys, non-equilibrium, 665-ambient interaction, 697electric field, 449potential, 951protection, 501reaction, 665recombination velocity, 95structure, 1017

synchrotron white beam, 1031

TED, 9 07TEM, 579, 585, 659, 697, 709,

861, 893, 901, 907, 937,945, 961, 975, 979, 983,987, 993

tension, 425ternary alloy, 785






1050

thermal(-)donor, 291, 597formation, 555

neutron(s), 179irradiation, 175

treatment, 919thermally stimulated current

(TSC), 189thermodynamic equilibrium

reaction, 831tight(-)binding, 349

theory, 287tilt grain boundary, 945titanium, 961topographic imaging, 1031total

energies, 81-energy

calculations, 89, 425surfaces, 511

transformation, 809transient

capacitance, 7 89current, 789

transition-metal films, 573state, 729

transmission, 3, 51line model (TLM), 993topographs, 1031

transmittance, 477transmuted Ge, 179transport equation, 615transverse electric fields,

337trapping, 109traps, 189positively charged, 951

TRR, 975twinning, 955two-beam experiment, 69

undersaturation, 715

vacancies, 561, 609, 639,845, 937, 969Ga, 677

vacancymechanism, 523-mediated, 511

valence force field (VFF)model, 893

Van der Pauw, 121vanadium, 63variable angle of incidence

spectroscopic ellipsometry(VASE), 965

variational calculation, 361virtual crystal approximation

(VCA), 893

void formation, 9 83

XPS, 1017x-ray(s), 1031

diffraction, 621, 627rocking, 1021

Zeeman, 133measurements, 273, 295spectroscopy, 51, 207

zero-field splitting, 307phonon line, 805, 821

zinc, 21, 33, 867substitutional, 681

ZnSe, 81, 349






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Author Index - Assetsassets.cambridge.org/97815589/90517/index/9781558990517... · 2013. 1. 31. · 1037 Author Index Abernathy, C.R., 477, 855 Adamski, Joseph A., 1007 Aers, G.C.,