AZO

BQ95001

BQ95002

BQ95038

BQ95074

DEPARTMENT OF ELECTRONIC ENGINEERING

HSIU-PING INSTITUTE OF TECHNOLOGY

(DC)(AZO)

DC AZO

DC (380nm ~ 780nm)

80%

XRD ZnO(002) FESEM

DC

.

1.1

1.2

2.1 .

2.1.1

2.1.2

2.1.3

2.2

2.2.1

2.2.2

2.2.3

3.1

3.2

3.2.1

3.2.2

3.3

3.3.1 (-step)

3.3.2 X

3.3.3

3.3.4

3.3.5 UV-VIS

4.1

4.2

4.2.1 DC

4.3

4.3.1 DC

1.1

e

(3C )

2054

[1]

2006 25.4 2007

27 [2]

(ITO)

ITO

600 USD/kg

1.2

: ()

()ZnO p

n () ZnO UV

ZnO AlInGaNGaN (excition)

GaN

[?]()

ZnO ZnO ()

AZO (RF)

AZO (DC) AZO

()

AZO (RF)+(DC)

AZO

2.1

2.1.1

( 380 ~ 780 nm) 80%

(liquid crystal display, LCD)

(Plasma display panel, PDP)

(touch panel)

: ()()

()

100 100

:

(surface effect)

(mean free path)

5 - 10

[?]

1907

Badeker[3](Cd)

[3]

Optical band gap 3ev

()

ITO [4,5] ATO [6,7]

FTO [8,9]

(non-stoichiometric)

2.1

2.1 [10]

2.1.2

(transparent conductive oxide thin film, TCO)

(Magnetron Sputtering)

(Pulsed Laser Deposition)

(CVD) (SprayPyrolysis)(Solgel)TCO

2.2 TCO

2. 2 TCO [11]

Application Material Process

Wavelength-Selective Doped SnO2

In2O3

ITO

ZnO:Al

Spray

Evaporation

CVD/Spray/Sputtering/

Evaporation

CVD/Sputtering

Solar Cell SnO2

In2O3

ITO

ZnO

Spray/Sputtering

Sputtering

Spray/Sputtering

Spray/CVD

Gas Sensors SnO2/Doped SnO2

ITO

CVD/Sputtering

Sputtering

Display Devices ITO Sputtering

2.1.3

LCD ITO

PDA

2.3

2.3 [3]

SnO2:F 3 m

AgTiN 1 m

SnO2:F

ITO

SnO2:F

(electrochromic, EC)

ITO

ITOZnO

ITOAg

Ag-Cu

alloy

SnO2

SnO2

ITOSnO2

AgITO

Ag/ZnO UV

2.2

2.2.1

Zinc Oxide, ZnO Wurzite hexagonal

structure( 2.1) N

3.1~3.6 eV

1975

UV 2.4

2. 1 Wurzite hexagonal structure

a = 3.2495 c = 5.2069

Zine

Oxygen

c

a

2. 4 [12]

Property

Mineral name zincite

Band gap Eg (eV) 0K: 3.436 300K: 3.2

Melting point () 1975

Heat of formation (eV) 3.6

Density (g/cm3) 5.67

Relative permittivity 8.1

Effective electron mass (m*/me) 0.28

Dopants B, Al, In, Ga, Si, Sn, F

Crystal structure hexagonal, wurtzite

Space group P63/mc

Lattice parameters (nm) a: 0.325 c: 0.5207

Thermal expansion (300K)

(10-6K-1) //c: 2.92 c: 4.75

Melting point of Zn metal () 420

2.2.2

3.1~3.6 eV

(UV cut off)

(Band edge)

Burstein-Moss shift(BM

)[13,14,15,16,17] 2.2(Eg0 Eg

)

BM

BM AZO

UV

cut off

2.2 -(Burstein-Moss)[17]

2.2.3

oxygen vacanciesinterstitial znic

shallow donor levels[2]

Al Zn Al Zn

(ionized impurity scattering centres)

[18]

(electrical conductivity)

:

J = E (2.1)

J ()

(A/m2)E (V/m)

(Siemens/m) S/m

(resistivity) -cm ohm-cm

J=Nev (2.2)

N ( cm-3)e

(=1.602210-19)v

(mobility cm2/V-s):

=Vd/E (2.3)

Vd(drift velocity)E

()(random)

(

)

(2.3) Vd(2.2) v

(2.1)(2.3)

=Ne (2.4)

I R

A W

T 2.3

R=L/A =L/WT (2.5)

L=W()

Rs=/T (2.6)

(sheet resistance) Rs

/square (WL T)

2.3 L A

(2.6)

(

)

3.1

1.

(AZO)(GFE)

30.125

98:2 wt%(98%ZnO,2%Al2O3) 99.99%

2.

: Corning 1737 glass

0.7mm

3.

:99.99%

: 99.99%

:99.99%

3.2

3.2.1

Corning 1737

(2cm2cm)

3.1

()

3.1

(acetone)

10

(IPA)

10

10

10

3.2.2

(1) 510-6 torr

(2) 510-6 torr(

)

(3) (Ar)

(4) DC power turn on 20 turn off

DC power

(5)

3.3

3.3.1 (-step)

stylus

(Max.

Scan Length) 10mm (Scan Speed) 2um/sec ~

200um/sec (Max. Vertical Range)0~2000um

(Sampling Rate) 50Hz100Hz200HzVertical

Range/Resolution13um/1A300 um/25A

Alpha-step500 3.3

-step

-step

3.2 Alpha-step500

substreas

3.3.2 X

X (XRD) X

() X X

(

)

2

40 kV 20 mA 20 - 60

4

AZO [27 , 28]:

Dp 1/2 the full width at half maximum of the

diffraction peak X-ray (=0.154041 nm), peak

3.3 X Rigaku PC-2000

3.3.3

(Hall effect measurement)

ECOPIA HMS-2000 3.4

3.4 ECOPIA HMS-2000

3.3.4

(I)(V)

(Sheet Resistance)

R = (L/A)

R L A

Wt

LR = (L)/(WT)

L=W

R = / T

S1=S2=S3=1 mm

s= CFV/I= CF(L)/(TW) =sT

s L T W CF

T

I

substart

S1 S2 S3

V

3.5 SR300DLCT 3000

3.3.5 UV-VIS

UV-VIS

( 190

350 nm 330 2700 nm)

()

()

band gap

[29]:

t T ( )2

[13]

3.6 UV-VIS-NIR Jasco V-670

4.1

AZO

( GFE AZO

)

4.2

4.2.1 DC

4.1 ~ 4.3 UV-VIS

AZO (380 nm ~ 780 nm) 80%

(absorption edge)(blue-shift)

Eg:

h=A(h-Eg)n

[30](direct transition) n=0.5

(indirect transition) n=2 A

h (h)1/n h

(h)1/n=0 Eg0

(band gap)

4.1 210-3 torr 3.3 ~ 3.48 eV 4.2

410-3 torr3.27 ~ 3.52 eV4.3610-3 torr3.28 ~ 3.48

eV 4.5-4.6 (optical band gap)

BM (Burstein-Moss

shift)[31,32] BM [33]

(carrier concentration) 2/3

-

4.1 210-3 torr (Refractive index)

1.9 ~ 1.81410-3 torr 1.9 ~ 1.8610-3 torr 1.9 ~ 1.7

300 400 500 600 700 800

0

20

40

60

80

100

Tra

nsm

itta

nce(%

)

Wavelength(nm)

225oC

250oC

275oC

300oC

325oC

4.1 210-3 torr

300 400 500 600 700 800

0

20

40

60

80

100

Tra

nsm

itta

nce(%

)

Wavelength(nm)

225oC

250oC

275oC

300oC

325oC

4.2 410-3 torr

300 400 500 600 700 800

0

20

40

60

80

100

Tra

nsm

itta

nce(%

)

Wavelength(nm)

225oC

250oC

275oC

300oC

325oC

4.3 610-3 torr

3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.00

1x105

2x105

3x105

Ab

sorp

tio

n c

oeff

icie

nt(

cm

-2)

Energy(eV)

225oC-2x10

-3torr

3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.00

1x105

2x105

3x105

Ab

sorp

tio

n c

oeff

icie

nt(

cm

-2)

Energy(eV)

250oC-2x10

-3torr

(a) (b)

3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.00

1x105

2x105

3x105

4x105

Ab

sorp

tio

n c

oeff

icie

nt(

cm

-2)

Energy(eV)

275oC-2x10

-3torr

(c)

3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.00

1x105

2x105

3x105

Ab

sorp

tio

n c

oeff

icie

nt2

(cm

-2)

Energy(eV)

300oC-2x10

-3torr

3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.00

1x105

2x105

3x105

Ab

sorp

tio

n c

oeff

icie

nt(

cm

-2)

Energy(eV)

325oC-2x10

-3torr

(d) (e)

4.4 210-3 torr (a)225 (b)250

(c)275 (d)300 (e)325

3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.00.0

2.0x105

4.0x105

6.0x105

Ab

sorp

tio

n c

oeff

icie

nt(

cm

-2)

Energy(eV)

225oC-4x10

-3torr

3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.00

1x105

2x105

Ab

sorp

tio

n c

oeff

icie

nt(

cm

-2)

Energy(eV)

250oC-4x10

-3torr

(a) (b)

3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.00

1x105

2x105

3x105

Ab

sorp

tio

n c

oeff

icie

nt(

cm

-2)

Energy(eV)

275oC-4x10

-3torr

(c)

3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.00

1x105

2x105

3x105

Ab

sorp

tio

n c

oeff

icie

nt(

cm

-2)

Energy(eV)

300oC-4x10

-3torr

3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.00

1x105

2x105

Ab

sorp

tio

n c

oeff

icie

nt(

cm

-2)

Energy(eV)

325oC-4x10

-3torr

(d) (e)

4.5 410-3 torr (a)225 (b)250

(c)275 (d)300 (e)325

3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.00

1x105

2x105

3x105

Ab

sorp

tio

n c

oeff

icie

nt(

cm

-2)

Energy(eV)

225oC-6x10

-3torr

3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.00

1x105

2x105

3x105

Ab

sorp

tio

n c

oeff

icie

nt(

cm

-2)

Energy(eV)

250oC-6x10

-3torr

(a) (b)

3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.00

1x105

2x105

3x105

4x105

Ab

sorp

tio

n c

oef

fici

ent(

cm-2

)

Energy(eV)

275oC-6x10

-3torr

(c)

3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.00

1x105

2x105

3x105

Ab

sorp

tio

n c

oeff

icie

nt(

cm

-2)

Energy(eV)

300oC-6x10

-3torr

3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.00.0

2.0x103

4.0x103

6.0x103

Ab

sorp

tio

n c

oeff

icie

nt(

cm

-2)

Energy(eV)

325oC-6x10

-3torr

(d) (e)

4.6 610-3 torr (a)225 (b)250

(c)275 (d)300 (e)325

4.1 210-3 torr

4.2 410-3 torr

4.3 610-3 torr

4.3

4.3.1 DC

4.21 210-3

torr 1.2310-2 ~ 3.4210-4 .cm410-3 torr

1.2310-2 ~ 4.0610-4 .cm610-3 torr 9.6510-3 ~ 3.8710-4

.cm

Y.Igasaki[34]

4.22 210-3 torr 2.83 ~ 14.77

(1020/cm3)410-3 torr 2.74 ~ 12.36(1020/cm3)610-3 torr

3.43 ~ 15.54(1020/cm3)[34]

4.23 210-3 torr (carrier mobility)

1.8 ~ 12.37(cm2/Vs)410-3 torr 1.84 ~ 12.43(cm2/Vs)610-3

torr 1.87 ~ 10.51(cm2/Vs)

4.244.254.26 210-3 torr410-3

torr610-3 torr

4.124.13 4.14

225 250 275 300 32510

-4

10-3

10-2

10-1

Resi

stiv

ity

(.c

m)

Temperature(oC)

2x10-3torr

4x10-3torr

6x10-3torr

8x10-3torr

1x10-2torr

4.7

225 250 275 300 325

0

2

4

6

8

10

12

14

16

18

Co

ncen

trati

on

(10

20/c

m3)

Temperature(oC)

2x10-3torr

4x10-3torr

6x10-3torr

8x10-3torr

1x10-2torr

4.8

225 250 275 300 325

0

2

4

6

8

10

12

14

Mo

bil

ity

(cm

2/V

s)

Temperature(oC)

2x10-3torr

4x10-3torr

6x10-3torr

8x10-3torr

1x10-2torr

4.9

225 250 275 300 325

0

20

40

60

80

100

120

140

0

2

4

6

8

10

12

14

16

0

2

4

6

8

10

12

14

Resi

stiv

ity

(10

-4

.cm

)

Temperature(oC)

resistivity

Co

ncen

trati

on

(10

20/c

m3)

concentration

Mo

bil

ity

(cm

2/V

s)

mobility

4.10 210-3 torr

225 250 275 300 325

0

20

40

60

80

100

120

140

0

2

4

6

8

10

12

14

0

2

4

6

8

10

12

14

Resi

stiv

ity

(10

-4

.cm

)

Temperature(oC)

resistivity

Co

ncen

trati

on

(10

20/c

m3)

concentration

Mo

bil

ity

(cm

2/V

s)

mobility

4.11 410-3 torr

225 250 275 300 325

0

20

40

60

80

100

120

0

2

4

6

8

10

12

14

16

18

20

0

1

2

3

4

5

6

7

8

9

10

11

Resi

stiv

ity

(10

-4

.cm

)

Temperature(oC)

resistivity

Co

ncen

trati

on

(10

20/c

m3)

concentration

Mo

bil

ity

(cm

2/V

s)

mobility

4.12 610-3 torr

4.4

4.4.1 DC

XRD 4.13 ~ 4.15 2=35o

ZnO(002)

AZO

(002)

4.10 ~ 4.12

SEM

AZO

X

20 30 40 50 60

0

10000

20000

30000

40000

50000

Inte

nsi

ty(a

.u.)

2(o)

(002)

225oC

250oC

275oC

300oC

325oC

4.13 210-3 torr XRD

20 30 40 50 60

0

50000

100000

150000

200000

250000

300000

Inte

nsi

ty(a

.u.)

2(o)

(002)

225oC

250oC

275oC

300oC

325oC

4.14 410-3 torr XRD

20 30 40 50 60

0

10000

20000

30000

40000

50000

60000

70000

80000

90000

100000

110000

120000

130000

140000

150000

160000

170000

Inte

nsi

ty(a

.u.)

2(o)

225oC

250oC

275oC

300oC

325oC

(002)

4.15 610-3 torr XRD

4.16 210-3 torr SEM

4.17 410-3 torr SEM

4.18 610-3 torr SEM

(DC) AZO

:

1.DC (380 nm ~ 780 nm) 80%

2.DC AZO

3. DC AZO

AZO

(DC) AZO