Characterization and Testbeam Analysis of irradiatedSilicon n-in-p Pixel Detectors for the ATLAS Upgrade

Christian Gallrapp1

M. Beimforde2, A. La Rosa1, A. Macchiolo2, R. Nisius2,H. Pernegger1, R. H. Richter3, P. Weigell2

1CERN-PH2Max-Planck-Institut für Physik

3MPI-Halbleiterlabor

17th RD50 WorkshopCERN - November 2010

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 1 / 18

Contents

1 Introduction

2 Lab-Mesurements

3 Irradiation

4 Test-Beam

5 Summary

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 2 / 18

CiS-Production (n-in-p Batch)

FE-I3

Production within RD50 Collaboration &ATLAS Planar Pixel Sensor GroupTechnology18 Fz n-in-p wafers, 300µm thick delivered by CiS.AdvantagesSingle-sided process⇒ Simpler and less expensiveStructures10 FE-I3: Single Chip Assembly (SCA) with diUerentguard-ring (GR) and isolation schemesHV stabilityNo sparks up to 700V due to BCB (Benzo CycloButene) passivation

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 3 / 18

DAQ-Systems

TurboDAQ setup

TPLL and TPCC, VME based

ATLAS FE-I3

USBPix setup

USB BoardAdapter Card

Single Chip Card w/ FE-I3

USB based

ATLAS FE-I3 and FE-I4

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 4 / 18

IV-Analysis

0 50 100 150 200 250 300 3500

0.2

0.4

0.6

0.8

1

Bias Voltage in V

Leak

age

Cur

rent

inµA

IV-Measurements for unirradiated sensors

PPS-W13-15GR10

PPS-W14-15GR10

PPS-W14-19GR2

PPS-W16-19GR3

Suggested working point forunirradiated sensors:

Bias voltage 150V

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 5 / 18

Threshold-Tuning

0 50 100 150 200 250 300 3500

100

200

300

400

Bias Voltage in V

Noi

sein

e−

Noise for unirradiated sensors

PPS-W13-15GR10

PPS-W14-15GR10

PPS-W14-19GR2

PPS-W16-19GR3

Noise behavior is consistentwith theory

FE-noise is ∼130e−

Sensor noise @ 150V = ∼40e−

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 6 / 18

Sr90 Mesurements

external trigger setup

Sr90

Collimator

Sensor

Front End

Scintillator0 50 100 150 200 250 300 350 400

0

10

20

Bias Voltage in V

QM

PVin

ke−

Charge distribution for CS2

PPS-W13-15GR10

PPS-W14-15GR10

PPS-W14-19GR2

Theoretical values for 285µm Silicon:Qmean ∼30.7ke−

QMPV ∼21.9ke−

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 7 / 18

IrradiationFinished irradiation:

CERN protons at 24GeV1 sensor at ∼6.2×1014 neq/cm2

1 SCA at ∼2×1015 neq/cm2

1 sensor at ∼2.5×1015 neq/cm2

1 SCA at ∼2.5×1015 neq/cm2

1 SCA at ∼3×1015 neq/cm2

1 sensor at ∼4.4×1015 neq/cm2

SCA cooling down

Karlsruhe protons at 25MeV1 SCA at 1×1015 neq/cm2

Ljubljana neutrons1 SCA at 1×1015 n/cm2

Upcoming irradiation:

Karlsruhe protons at 25MeV1 SCA at 3×1015 neq/cm2

1 SCA at 5×1015 neq/cm2

Ljubljana neutrons1 SCA at 3×1015 n/cm2

1 SCA at 5×1015 n/cm2

thanks to M. Glaser for the irradiation at CERNthanks to A. Dierlam and the Helmholtz Alliance for the irradiation in Karlsruhe

thanks to V. Cindro for the irradiation in Ljubljana

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 8 / 18

IV-Analysis

0 50 100 150 200 250 300 3500

5

10

15

20

25

Bias Voltage in V

Leak

age

Cur

rent

inµA

Irradiated sensors at −20 °C; Wuence ∼1×1015 neq/cm2

PPS-W18-19GR2

PPS-W16-15GR10

0 1 2 3 4 5 6 7 8 90

2

4

6

8

10

12

Time in days

Col

lect

edC

harg

ein

ke−

Annealing of W16-15GR10

P. Weigell et al. / 8th International Conference on Radiation EUects onSemiconductor Materials Detectors and Devices, Florence October 2010

The calculated damage rate α iswithin the expected range

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 9 / 18

Noise-Analysis

0 50 100 150 200 250 300 3500

100

200

300

400

Bias Voltage

Noi

se

Noise for irradiated and unirradiated sensors

irradiated PPS-W18-19GR2

unirradiated PPS-W13-15GR10

PPS-W18-19GR2 was neutronirradiated up to 1×1015 n/cm2 inLjubljana

Noise for irradiated sensors isincreasing with higher biasvoltage

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 10 / 18

Sr90 Mesurements

0 100 200 300 400 500 600 7000

5

10

15

20

25

30

35

Bias Voltage

QM

PVin

ke−

Charge distribution for CS1

irradiated PPS-W18-19GR2

unirradiated PPS-W13-15GR10

unirradiated PPS-W14-15GR10

unirradiated PPS-W14-19GR2SuXcient charge collection afterirradiation

Increasing charge collection forhigher bias voltages

∼65% of charge collection at700V bias voltage compared tounirradiated sensors

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 11 / 18

Test-Beam Setup

SPS beamline (H6) with 200MeVpions

6 weeks of beam in 3 periodes

several samples from diUerentgroups

6 samples from Munich

Testbeam-Group July 2010:M. Benoit, Ch. Gallrapp, M. George, S. Grinstein, Z. Janoska, J. Jentsch, A. La Rosa,

S. Libov, D. Muenstermann, G. Piacquadio, B. Ristic, I. Rubinsky, A. Rummler,D. Sutherland, G. Troska, S. Tsiskaridze, P. Weigell, J. Weingarten, T. Wittig

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 12 / 18

Test-Beam Setup

EUDET-Telescope with ∼4µmresolution

Test Beam AnalysisMatched clustersAll cluster sizes

Testbeam-Group October 2010:M. Beimforde, M. Benoit, M. Bomben, G. Calderini, Ch. Gallrapp, M. George,

S. Gibson, S. Grinstein, Z. Janoska, J. Jentzsch, O. Jinnouchi, T. Kishida, A. La Rosa,V. Libov, A. Macchiolo, G. Marchiori, D. Muenstermann, R. Nagai, G. Piacquadio,B. Ristic, I. Rubinskiy, A. Rummler, Y. Takubo, G. Troska, S. Tsiskaridze, I. Tsurin,

Y. Unno, P. Weigell, J. Weingarten, T. Wittig

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 13 / 18

Test-Beam Results - Unirradiated Sensors

High eXciency for unirradiatedsensor: ε = 99.31%

Good charge collection, also inthe punch-through region wellabove threshold

EXciency map

mµLong Pixel Side/0 100 200 300 400

mµS

hort

pix

el S

ide/

0

10

20

30

40

50

90

92

94

96

98

100

Collected charge by track

mµLong Pixel Side/0 100 200 300 400

mµS

hort

pix

el S

ide/

0

10

20

30

40

50 -ke

15

20

25310×

Punch-through biasing

Preliminary TB results

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 14 / 18

Test-Beam Results - Proton Irradiated Sensor 1015neq/cm2

Collected charge is inaggreement withlab-measurements

Good charge collection in thewhole sensor area

Collected charge at 500V

W16-15GR10Entries 137456Mean 1.535e+004Constant 3.557e+004MPV 1.237e+004Sigma 1146

]-Cluster charge [e0 10 20 30 40 50 60 70 80 90 100

310×

Tra

cks

0

1000

2000

3000

4000

5000

6000

W16-15GR10Entries 137456Mean 1.535e+004Constant 3.557e+004MPV 1.237e+004Sigma 1146

Collected charge by track at 500V

mµLong Pixel Side /0 50 100 150 200 250 300 350 400

mµS

ho

rt P

ixel

Sid

e /

0

5

10

15

20

25

30

35

40

45

50 ]-M

ean

Ch

arg

e [e

11

12

13

14

15

16

17

310×

Preliminary TB results

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 15 / 18

Test-Beam Results - Neutron Irradiated Sensor 1015neq/cm2

stable performace for several days at 700V

Good charge collection well above threshold

Collected charge at 700V

Preliminary TB results

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 16 / 18

Summary

ResultsGood threshold to noise ratio

Good performance for irradiated sensors with Sr90

First promissing test-beam results for irradiated sensors

HV-Stability up to 700V

PlansShow HV stability for higher voltages needed for IBL Wuences

Measurements on higher irradiated sensors

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 17 / 18

Thank you for the attention!Questions?

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeC. Gallrapp 18 / 18