BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE-PILANI, GOA CAMPUS

INSTRUCTION DIVISION

SECOND SEMESTER 2011-2012

Course Handout

Date: 05/01/2013

Course No. : PHY G541

Course Title : Physics of Semiconductor Devices

Instructor : E. S. Kannan

email of I/C : eskannan@goa.bits-pilani.ac.in

1. Scope and objective:

The course aims to introduce the physics of basic and advanced semiconductor devices.

Concepts ranging from macroscopic diodes and transistors to mesoscopic and nano scale

devices such as high electron mobility transistors, carbon nanotube and graphene field

emission devices, Spin and single electron transistors will be covered to expose the students

to the emerging trends in semiconducting devices. A general overview on photovoltaics and

organic solar cells will also be provided.

2. Text Book:

i. Physics of Semiconductor Devices by J. P. Colinge & C. A. Colinge, Kluwer Academic

Publishers.

ii. The Physics of Low-dimensional Semiconductors by J. H. Davis, Cambridge University

Press.

3. Reference Books:

i. Semiconductor physics and devices by D. A. Neamen, Tata Mc-Graw hill.

ii. Semiconductor physics and devices by S. S. Islam, Oxford University Press.

iii. Semiconductor Devices, Physics & Technology by S. M. Sze, John Wiley & Sons.

iv. Physics of semiconductors and their heterostructures by Jaspreet Singh, McGraw Hill.

4. Course Plan:

Lect. # Topic Learning objectives Reference

1 - 3 Introduction to semiconductors, doping,

electron-hole conduction, concept of

mobility and effective mass.

Foundations for basic understanding of

electrical conduction in semiconducting

materials.

J. P.

Colinge &

C. A.

Colinge

4 – 7 Drift velocity of electrons in an electric field,

Drift current, Drift-diffusion equations,

Transport equations, Thermal excitation of

carriers, Fermi energy and Density of states

Introduction to the carrier transport

phenomena in semiconductor. J. P.

Colinge &

C. A.

Colinge

8-9 Generation / Recombination Phenomena,

Direct and indirect transitions, Generation /

recombination centers, Excess carrier

lifetime, Minority carrier lifetime, Surface

recombination.

To understand the mechanism of carrier

generation-recombination in a semiconductor. J. P.

Colinge &

C. A.

Colinge

9-10 Particle in a box, Schroedinger Wave

equation, Kronig-penny model, 1D-2D and

3D band structure.

Visualization of quantum mechanical effects,

energy band structures.

J. H. Davis

11 - 12

The PN Junction Diode, I-V characteristics,

Models for the PN junction

(Quasi-static, large-signal Small-signal, low-

frequency, high-frequency model, Solar cell,

P-i-N diodes.

Derivation of the electrical characteristics of

P-N contacts. The notion of a space-charge

region is introduced and carrier transport in

these structures is analyzed.

J. P.

Colinge &

C. A.

Colinge

13 - 14 Metal-semiconductor contacts, JFET and

MOSFET, Hall Effect

To study the carrier transport in field effect

devices and also to introduce the concept of

source, gate, drain, and channel.

J. H. Davis

+

J. P.

Colinge &

C. A.

Colinge

15 - 17 Quantum well based High electron mobility

transistors, Heterojunction- Epitaxial

Growth, Semiconductor processing, quantum

Hall effect.

Semiconductor processing techniques

involving oxidation, lithography, etching, and

silicide formation will be introduced. Concept

of HEMT will be discussed.

J. H. Davis

18 - 21 Organic semiconductors. Graphene and

carbon nanotube based field effect transistors

To introduce the concept of rapidly evolving

science of organic field effect devices.

Journal

Reference

22 -25 Quantum dot based single electron transistor To introduce the concept of a single electron

transistors which will be future building block

for many electronic and optical devices.

Journal

Reference

26 - 29 Semiconductor and Spin Physics Spin Hall Effect, Spin Properties of Confined

Electrons in Si

Journal

Reference

30 - 33 Diluted Magnetic Semiconductors Basic Physics and Optical Properties Journal

Reference

34 - 37 Photovoltaics-both organic and inorganic Basic Physics and Optical Properties Journal

Reference

Note: 1. Make-up will be given only in exceptional circumstances like hospitalization.

2. Chamber consultation time; to be announced in the class.

3. Evaluation Scheme:

1. Test 1 10 % Closed book

2. Test 2 10 % Closed book

3. Comprehensive Examination 30 % Closed book

4. Class room group discussion 10% Topics to be discussed in the class

5. Seminars 20 % Only ideas from journal paper

should be presented. No text book

material.

6. Class Quizzes 20% Announced/surprise