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Department of Electronics and Nanoengineering Stadius, Ul Haq, Khonsari Integrated RF circuits Spring 2018 ELEC-E3550 Integrated RF circuits Spring 2018

ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

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Page 1: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

ELEC-E3550Integrated RF circuits

Spring 2018

Page 2: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Topics of the previous lecture

Concepts related to mixers”mixing” = multiplication in time-domain = frequency shift in frequency domainConversion gain, SSB / DSB NF, IIP2 / IIP3, ICP, isolation

Active mixersCascode amplifier

Active mixerSingle-balanced mixer

Double-balanced mixerGilbert cell mixer

Passive mixersVoltage-mode passive mixer

Current-mode passive mixer

Page 3: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Frequency Synthesizers (SX)

• System level & concepts• SX principles

• Phase-locked loop• ”theory” / CP-PLL / ADPLL

• Oscillators• Ring & LC

• Frequency dividers• Quadrature generation

Exercises & Homework

0 90°

A D

A D

Pre-select

Channel select

LO

I

Q

90o

DAI

DAQ Break

Break

Page 4: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

SX Requirements

LO

fLO

phase noise

spurious tones

harmonics

Page 5: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

SX Requirements

• Frequency span --- cover the required bandwidth + margin for PVT• Channel spacing & settling time• Phase noise• IQ-generation --- Amplitude and phase imbalance (IRR)

LO

fLO

phase noise

spurious tones

harmonics

Page 6: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Impact of Phase Noise

LOInterferer

signal

Down-Conversion

Q

I

Phase noise impactsIQ-constellationReciprocal mixing

In TX, phase noise causes out-of-band spurious emission.

Page 7: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Impact of Phase Noise

Phase noise requirement depends on:• Channel spacing• Modulation method (eg. compare QAM-16 vs. QAM-256)• Required sensitivity and selectivity• Specified environment (”hostile” / ”friendly”)• TX: emission mask

LOInterferer

signal

Down-Conversion

Q

I

Phase noise impactsIQ-constellationReciprocal mixing

In TX, phase noise causes out-of-band spurious emission.

Page 8: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Phase Noise Specifications

System Band[MHz]

Ch. spacing[kHz]

N/C[dBc/Hz]@kHz

norm-N/C*[dBc/Hz]

IS54 824-849 30 -115@60 -132

GSM 880-915 200 -141@3000 -125

DECT 1880-1900 1728 -97@1800 -91

WCDMA 1920-1980 5000 -129@8000 -111

WLAN (b) 2400-2483.5 22000 -103@1000 -105

BlueTooth 2400-2483.5 1000 -109@1000 -111

GPS 1575.42 - -95@1000 -93

DOCSIS** 47-862 6000 -82@10 -100

DVB-S 10700-12750 fixed LO1 -95@100 -131

* Normalized to 2GHz and 1MHz, N/C~(fo/fm)2 **data over cable-TV

Phase noise specification for SX given either by• N/C at certain offset, e.g N/C@1 MHz < -120 dBc/Hz• Integrated N/C profileà can be then converted to jitter spec

Page 9: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

IQ Imbalance

LNA

LO_I

LO_Q

LNA

LO_I

LO_Q

A D

A D

Hartley Receiver DCR

• LO signals (I) and (Q): equal amplitude (A) and 90-degree phase shift (f)• DA and Df results in imperfect image rejection or reduced SNR for DRC• Every signal path element contribute to IRR, but usually LO imperfections dominate• Image-Reject Ratio (IRR) is a measure of LO signal imbalance

2

21 2 cos1 2 cos

bal bal

bal bal

A AIRR

A Aqq

+ D +=

- D +

• Typically DCRs need IRR > 30 dBà Abal < 0.5 dB and ∆θ < 4°• LO chain often includes limiting amplifiersà phase error remains a challenge

Page 10: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Frequency Synthesis Methods

1. Direct analog synthesis

2. Direct digital synthesis

3. Indirect digital synthesis

4. Indirect analog synthesis

”DDS”

”PLL”

”DAS”

Page 11: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Direct Analog Synthesis (DAS)

Main problem for RF IC implementation: good filters can not be integrated.

DAS is in use e.g. in measurement instruments – High perf, high price

…switch

switch

switch

• Filters are filter banks and/or tunable filters• Amplifiers not drawn• Chain may include dividers as well

f1

f2f3f4

Page 12: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Direct Analog SynthesisAt RF IC context we may use simplified versions of DAS.

”Manipulate a frequency tone with basic mathematical operators”- addition à mixer- substraction à mixer- division à frequency divider- multiplication à frequency doubler / tripler

Band 1

VCOFractional-N PLL

Band 2

Band 3

Band 4

Band 5

/ N1

/ N2

/ N3 N4

Page 13: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Direct Digital Synthesis (DDS)

Problems:needs a high-speed D/Aneeds fclock > 3* fout

DDS is used in base stations and LF radios (e.g. military)Enables very complex modulations (military)

PhaseAccumulator

clock

data ROM D/A

time-sampledphase

time-sampledamplitude

analogsignal

Page 14: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Indirect FS -- Phase-Locked Loop

Basic idea is to lock the oscillator into the incoming signal using a feedback loop.Compare to: feedback amplifier analysis in electronics

feedback systems in control theory and automation

VCO PDfRef fout

VCO PDfRef fout

1/N

Page 15: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Some Books on PLL’s

• Many basic text books on RF/analog IC electronics include a chapter on PLLs– Razavi: RF Microelectronics,– Lee: The Design of CMOS RF IC,– Grebene: Bipolar and MOS Analog IC Desing, etc.

• U. Rohde: many books on PLL’s, not RF IC oriented• F. Gardner: Phaselock Techniques• R. Best: Phase-Locked Loops: design, simulation and applications• J. Crawford: Frequency Synthesizer Design Handbook• D. Wolaver: Phase-Locked Loop Circuit Design• C. Vaucher: Architectures for RF Frequency Synthesizers• D. Banerjee: PLL Performance, Simulation and Design (wireless.national.com)• ... and many more J

Page 16: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

PLL

VCOspur

C/N

log w

PLL performs a high-pass filtering for the phase-errorà flat in-band noise

phasenoise

Typical Results of Linear Analysis

Page 17: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Integer-N PLL:• reference frequency = channel spacing• if N is very large

• stability requires loop-BW < fref/10 à loop-BW smallà long settling time & poor phase noise reduction at high offset

• ref. source & PD noise is multiplied by N• Recall: GSM1800 ch. spacing=200 kHz, N~10000

Fractional-N Concept

Page 18: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Integer-N PLL:• reference frequency = channel spacing• if N is very large

• stability requires loop-BW < fref/10 à loop-BW smallà long settling time & poor phase noise reduction at high offset

• ref. source & PD noise is multiplied by N• Recall: GSM1800 ch. spacing=200 kHz, N~10000

Basic integer-N PLL is not good for small channel-spaced systemsÞ Improvments on PLL architecture (mixers in loop, dual-loop, frac-N PLL)

Dual-modulus divider

)1(

111

1

+×+

+==

=+

×+

+×+

NT

TTNT

TTNff

fN

fTT

TNf

TTT

B

BA

A

BAeffin

out

outin

BA

Bin

BA

A

/N/(N+1)fin fout

TA TB

Fractional-N Concept

Page 19: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

• With the aid of dual-modulus divider division ratio can be set to N...N+1Example: TA/(TA+TB)=90%, TB/(TA+TB)=10% and N=100 => Neff » 100.1

à Frac-N PLL provides small channel step and still large loop-BW.

• Main problem : ”fractional spurs”àCan be partly compensated by randomizing the timing

and using SD noise shaping.(for details, Razavi presents an easy-to-read presentation in RF Microelectronics)

• Frac-N PLL requires more hardware and suffers from high spurios contentand increased noise level compared to int-N PLL.à use only when integer-N is not feasible.

Fractional-N Concept

Page 20: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Charge-Pump PLL

PFD

1/N1

fOUT

VCO

1/N2

Loop FilterPhase-Frequency

Detector

Charge Pump

fREF

UP

DW

Page 21: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

1) Analog multiplier (mixer)

KD depends on input signal level, not good !

If mixer inputs are overdriven, outputs saturates into ”0” or ”1”This is equivalent to drive a XOR gate with squarewaves.

2) Digital comparator (XOR gate)- performs essentially the same function as analog multiplier

These circuits do not provide frequency information: PD can not distiguishwhether win>wout or win<wout : this is called ”self acquisition”A small DC component in the error signal guides the loop.Therefore, it takes a relatively long time for the loop to settle.à we need a phase-frequency detector

[ ])2sin()sin(

)cos()()sin()(

2121

2121

2211

fwf

fww

-+=

-==

tVVVVKV

tVtvandtVtv

mD

Phase Detector

Page 22: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

• also called ”tri-state phase detector”• two D-flipflops and AND-gate• Delay element is used to avoid

”dead-zone” problem.

+ edge-trigged circuità duty-cycles of the inputs ¹ 50% OK

+ Frequency steering

Phase - Frequency Detector

Page 23: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Up/Dn control pulses from PFD are driving a buffer stage.• Three basic configurations• Key challenges:

• Linear response ( time – charge )• Matching of IUP / IDW

UP

DN

Charge Pump

Page 24: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

CP creates an additional pole into transfer functionà loop becomes potentially unstable

à R has to be added for stability, and another C for attenuating ripple.

Active filter+ Can provide DC gain: additional design freedom+ (partial) remedy for charge leakage+ Not resiprocicalà suppress VCO feedthrough- Higher noise, higher component count & power

Loop Filter

Oscillator and divider will be discussed in detail later.

Page 25: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Impact of Technology EvolutionRecall our earlier paradigm changes, e.g.• GaAs MESFETà Si Bipolarà CMOS• Superheterodyne receiverà DCR• Monolithic capacitors: vertical fieldà lateral field• Gilbert cell mixerà current-mode passive mixer

Page 26: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Impact of Technology Evolution

“Simple PD” (mixer)PLL

Charge-pumpPLL

All-digitalPLL

1990 2000 2010

Recall our earlier paradigm changes, e.g.• GaAs MESFETà Si Bipolarà CMOS• Superheterodyne receiverà DCR• Monolithic capacitors: vertical fieldà lateral field• Gilbert cell mixerà current-mode passive mixer

“In a highly-scaled CMOS technology, time-domain resolution of a digitalsignal edge transition is superior to voltage resolution of analog signals”

R. Bogdan StaszewskiManager of

TI’s DRP group

Page 27: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

All-Digital PLL

TDC

1/N

fOUT

DCOLoopFilter Dither

fREF

FCW ∑ Tune

• Frequency control word (FCW) defines the target frequency• Time-to-Digital converter (TDC) describes the output frequency with a digital word• Error signal (digital) is filtered in the digital loop filter• Digital-controlled oscillator (DCO) is tuned accordingly• Dithering (compare to frac-N principle) is used to achieve fine frequency step• Prescaler used to lower fout (only if needed!) (65-nm CMOS: TDC fmax~1.7 GHz)

Page 28: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

10 minutes break

à Oscillatorsà Dividersà IQ generation

Page 29: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Oscillators

Oscillator is an autonomous device which generates a waveformà It converts power from DC to ”AC”

Variable frequency oscillator converts a control signal into frequencyà information is converted from one mode to another• VCO – voltage-controlled oscillator• ICO – current-controlled oscillator• DCO – digitally controlled oscillator

Oscillator waveform can be• Sinusoidal : low level of higher harmonics• Square : high level of higher harmonics, ”clock signal”

• ramp or triangular is used at LF control circuits

Page 30: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Oscillator Classification

oscillation mode oscillator structure

• Stable (no oscillation)• Harmonic (sinusoidal)• Relaxation• Chaotic

• Phase shift (RC)• Gm-C• Crystal• Multivibrator

• Ring• LC

No correlation !!

Page 31: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Oscillator Terms and Figures of Merit• Tuning Range : ratio of maximum and minimum oscillation frequency• VCO gain (KVCO) and its deviation (linearity)• Output power (preferably constant)• supply voltage / current consumption / power efficiency• Distortion in ”sinusoidal” oscillators• Temperature stability (Dfreq/DT)• Pushing (PSRR) (Dfreq/Dsupply)• Pulling (load) : Frequency shift caused by load impedace variation• Pulling (injection) : Frequency shift caused by external disturbance• Phase Noise / Jitter• Die Area (IC implementation) / Component count (discreate circuits)

nconsumptioPowerNoisePhaseRangeTuningFOM

Page 32: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Ring Oscillator

0 1 0 11 0 1 00 1 0 1

Nfosc t2

1=

NCIf

IC

loadosc

load µÞµt

t t t

Page 33: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Ring Oscillator

0 1 0 11 0 1 00 1 0 1 Real implementation is differential and

simple cross-coupling creates proper fb.

+ can be transistor-only circuità small area

+ Easy to tune, large tuning range

M power cons. is relative to freq.(although follows technology-nodes)Mmoderate (poor) phase noise

Nfosc t2

1=

NCIf

IC

loadosc

load µÞµt

t t t t t tt

Page 34: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

LC Oscillator

Is negative resistor a plausible device at all?

Gloss Gneg0

1

£-

=

negloss

osc

GGLC

w

Page 35: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

LC Oscillator

Is negative resistor a plausible device at all?

Transconductor in unity feedback Gunn diode

Gloss Gneg0

1

£-

=

negloss

osc

GGLC

w

i=gm×vinvin

vout

-vout

I

V

)( outm

outin vg

vR-×

=

Page 36: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Negative Conductance : Unity Feedback(most of modern RFIC VCOs use these)

• Cross-coupled pair (CCP) : NMOS / PMOS / CMOS• Biasing : top / bottom / none• Advanced techniques like noise filteringà Really many different topologies exist

Page 37: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

NMOS CCP Biasing

Page 38: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

CMOS Cross-Coupled Pair

Page 39: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Negative conductance : reactive feedbackZin

Vbias

C

C

222

1C

min jC

gZww

+-=

nmos = gm and Vbias–node is signal ground

Zin

Vbias

Page 40: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Negative conductance : reactive feedbackZin

Vbias

C

C

222

1C

min jC

gZww

+-=

nmos = gm and Vbias–node is signal ground

Zin

Vbias ( )LjRcoil w++

Add a coilà oscillator

Page 41: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Negative conductance : reactive feedbackZin

Vbias

C

C

222

1C

min jC

gZww

+-=

nmos = gm and Vbias–node is signal ground

Some Classical Oscillators

Zin

Vbias

bias

bias

bias bias

MEISSNER ARMSTRONG HARTLEY COLPITTS

CLAPP MILLER

bias

bias

( )LjRcoil w++

Add a coilà oscillator

Page 42: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Linear Analysis Methods

B(s)

A(s)

ZG ZL0)()(

0)()(

00

00

=+=

£+=

wwww

LG

LG

XXXRRR

1) Loop-Gain

2) Negative-Resistance

3) Nodal EquationSee details:L. Larson : RF and microwave circuitdesign for wireless communications

°=Ð

³

180)()(1)()(

oscosc

oscosc

jBjAjBjAww

ww

[ ] [ ] { }{ } 0

000

=

=Þ=Þ=×

YIM

YREYVY

in each case you get two equationsone for fosc and second for -gm

Page 43: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Example: Common-Drain Colpitts

RC1

C2L

Yin

gm(V1-V2)Yo

V2V1

GL

01)(

1

211

11=

+++++---

--+++

moinmin

inLin

gYR

YCCjgCjY

CjYGCjYLj

ww

www

( ) ( )in

moL

in

in CCC

ggR

G

CCCCCCL +

+++

+++

=12

21

12

)1(1w ÷÷

ø

öççè

æ+

++

++++

>in

inLo

inm CC

CC

CCGgRC

CCg1

2

2

1

2

1 2)1(

Vb

C1

C2

Page 44: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Oscillator Simulations1) Small-signal analysis : loop-gain or neg-res method (AC or S-par analysis)

à rough estimation for fosc and adequate gain- NOT ACCURATE due to various large-signal phenomena

2) Time-domain analysis (TRAN) à Oscillation frequency and amplitude• You need a time-varying element for oscillation build-up

(eg. exp. incr. supply, init current in coil)• Use constant time-step• Use high precision settings

- Sweeps toilsome in some simulators- No noise analysis / analysis really heavy

3) Harmonic Balance (SST, ”steady-state” sim.)à gives oscillation frequency and amplitudeà Phase noise analysis+ Results readily in frequency domain+ Easy to sweep parameters and analyze results- Not available in all softwares, may include flaws- Not a general simulation, you can not simulate everything with SST

.option HMIN=2p HMAX=2p eps=0.1u reltol=1u

Vprobe drain1 drain2 probe

.sst oscil nharm=10 fund_osc=3G

.extract fsst label=taajuus fund_osc

.extract fsst label=Voscpp yval(vm(drain1), fund_osc)

.sstnoise v(drain1) harm (1) dec 10 1k 10e6*.plot sstnoise db(phnoise).extract sstnoise label=N/C@10k yval(db(phnoise), 1e4).extract sstnoise label=N/C@1M yval(db(phnoise), 1e6)

Page 45: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Remainder: Monolithic Coils

i i

H

Very important for RF ICsà Self-learning assignment

Page 46: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Remainder: Varactors

N-wellP-type substrate

N-wellP-type substrate

G

Inversion-mode PMOS

N-type accumulation-MOS

P-type substrate

G

Inversion-mode NMOS

N-isoP-type substrate

G

P-type accumulation-MOS

P-well

G

• Four types are available, inversion-mode are “ordinary” MOSFETs• Quality factor and tuning range (Cmax/Cmin) are competing properties• Typ. Q~50 at 2 GHz and TR~3• Process variation tracks to MOSFET variation

Page 47: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Coarse tuning with SC-network• Large VCO tuning range (à high Kvco) is needed to compensate PVT variations.• High Kvco means that oscillator is noisy, and it also causes problems in PLL design.• How to implement large tuning range with small Kvco ?

à switched-capacitor network for coarse tuning

tune

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 16

6.5

7

7.5

8

8.5

9

9.5

10

Tuning voltage [V]

Freq[GHz]

Page 48: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Oscillator Phase NoiseIntuitive approach : ”noise mixing”• Oscillator is a nonlinear circuit• oscillation swing is ”internal LO”• noise (int. & ext.) is mixed into carrier• fb-loop performs filtering

Intuitive approach II : ”Frequency modulation”• Oscillator is a VCO & ICO• noise is modulating the oscillator frequency

noise w

n

"LO"

VCO ICO

wn- wn

[ ]ttKVAtAtv mmm

VCOmosc )cos()cos(

2cos)( 000 wwww

ww --+

××+»

Low phase noiseà Minimize nonlinearityà Minimize KVCO and other sensitivities

Narrowband FMapproximation

Page 49: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Oscillator Phase NoiseConsider ideal parallel LCR-type oscillator with noiseless Gneg.

There are losses in the resonator and corresponding noise source is

Impedance of the LC-tank

Tank quality factor

We have

Noise voltage is

This is both amplitude and phase noise. Oscillator performs amplitudeclippingà no amplitude noise. Thus, divide above by two. Also recall

Noise-to-carrier ratio is

kTGf

in 42

=D

0

00

2)(

ww

www

D-»D+

LjZ

QGL

LGQ

00

11ww

=Þ=

ww

ww

ww

wwD

=D

»D+ 0

00

00 2

1

2)(

QGQGZ

20222

214 ÷÷

ø

öççè

æD

=×D

=D w

wQ

kTRZf

if

v nn

RPv sigsig ×=2

20

212/ ÷÷

ø

öççè

æD

=w

wQP

kTCNsig

Low phase noiseà Maximize Psig and Q

Page 50: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Leeson’s Phase Noise Model

( )ïþ

ïýü

ïî

ïíì

÷ø

öçè

æD

+×÷÷ø

öççè

æD

×=Dww

ww c

sig

fQP

FkT 1)21(12log10 20L

Heurestical model (based on experiments)• fc is 1/f-noise cornerà close-in noise• constant term ”1” is included to

describe the noise floor• F is for additional noise due to –gm

10 100 1000 10000-140

-130

-120

-110

-100

-90

-80

-70

C/N[dBc/Hz]

Frequency [kHz]

-30 dB/dec

-20 dB/dec

noise floor

M fc is not the same as device’s 1/f-cornerM F is difficult to estimate a prioriM Based on linear time-invariant model

Page 51: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Frequency Dividers

à There is a frequency limit, set by the limited speed of dynamic logic or increased powerconsumption, where static logic becomes superior.With 65-nm CMOS this limit is in range of 2-3 GHz, in 28-nm at 5-7 GHz.

CVfP ddDC ××= 2

Static logic (SCL = source-coupled logic)• devices have constant bias (no saturation)• no speed limitation (as with dyn. logic)• power – frequency dependency weaker• differential signals (dyn. logic single-ended)à Better immunity to noise, glitches etc.

Dynamic logic:• transistors operate as switches• many logic families• on/off switchingà limited speed• power consumption is related to speed :

• speed scales with the technology.• power consumption scales with the technology

From RF designer’s point of view there are two types of logic: dynamic & static

Page 52: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

SCL D-flipflop divider

• D-flipflop in unity feedback is a divide-by-two circuit• D-flipflop consists of two D-latches

D-latchD Q

DX QX CLK

D-latchD Q

DX QX CLK

DFFfin

fout

Q

CLK

D

• resistor• PMOS• inductor

TRACK HOLD

Page 53: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Divider Chains

DFF DFF

in

out

modulus ctrl

DFF DFF

in

modulus ctrl

Div-2/3 Div-3/4

Asynchronous chainDivide by 2N

Johnson counterDivide by 2N

Dual-modulusdividers

D Q

DFF

QXD Q

DFF

QXD Q

DFF

QX

D Q

DFF

QXD Q

DFF

QXD Q

DFF

QXD Q

DFF

QX

• Power consumptionlower after each division

• Higher noise (jitter)

• Each DFF runs at finàhigher power cons.• smaller noise (jitter)

Page 54: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

IQ Generation

0 90°

A D

A D

Pre-select

Channel select

LO

I

Q

Four LO signals needed:0° / 90° / 180° / 270°

IQ amplitude and phasebalance (IRR) very important.

1. RC phase shiftersà polyphase RC filter2. Divide-by-two circuit3. Quadrature oscillators

Page 55: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

RC Phase Shiftersvin

vinI QQp ( 90 deg)

Im ( 180 deg)

Qm ( 270 deg)

Ip ( 0 deg)

constant IQ phase balance constant IQ amplitude balance

• Narrow bandwidth• Sensitive to process spread• Post-tuning possible• Clipping amplifier helps

RC-CR network

Page 56: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

RC Phase Shiftersvin

vinI QQp ( 90 deg)

Im ( 180 deg)

Qm ( 270 deg)

Ip ( 0 deg)

constant IQ phase balance constant IQ amplitude balance

• Narrow bandwidth• Sensitive to process spread• Post-tuning possible• Clipping amplifier helps

RC-CR network

vin Qp

Ip

Im

Qm

0

10

20

30

40

50

60

70

80

90

100

110

3-stage

2-stage

IRR

[dB

]

Frequency

Polyphase RC filter

Page 57: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Divide-by-two IQ Generation

D-latchD Q

DX QX CLK

D-latchD Q

DX QX CLK

DFFIN

I Q

• Wide bandwidth• Compact size, easy to design well• IRR limited by latch matching• Requires double-freq signal• Non-perfect input signal:

• Amplitude error => phase error• Phase error attenuates a bit

Page 58: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Divide-by-two IQ Generation

D-latchD Q

DX QX CLK

D-latchD Q

DX QX CLK

DFFIN

I Q

• Wide bandwidth• Compact size, easy to design well• IRR limited by latch matching• Requires double-freq signal• Non-perfect input signal:

• Amplitude error => phase error• Phase error attenuates a bit

IN

BIAS &POWER CTRL

I

IX

Q

QX

Page 59: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Quadrature Oscillators

t t tt0° 90° 180° 270° 0°

Oscillator 2Oscillator 1 0 90 180

270 0 180

Page 60: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Quadrature Oscillators

t t tt0° 90° 180° 270° 0°

Oscillator 2Oscillator 1 0 90 180

270 0 180

• Quadrature coupling resultsin increased phase noise

• Large die area

Page 61: ELEC-E3550 Integrated RF circuits Spring 2018 · Main problem for RF IC implementation: good filters can not be integrated. DAS is in use e.g. in measurement instruments – High

Department of Electronics and NanoengineeringStadius, Ul Haq, Khonsari

Integrated RF circuitsSpring 2018

Summary

• SX requirements, impact of phase noise, IQ imbalance (IRR)• DAS / DDS / PLL• CP-PLL• ADPLL

• Oscillators: Ring & LC• LC-oscillators: unity feedback / reactive feedback• Phase noise

• Frequency Dividers: dynamic ”CMOS” / static ”SCL”• IQ signal generation: RC polyphase / Div-2 / quadrature osc.