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2012 ITRS

Emerging Research Materials

[ERM]

December 5, 2012

C. Michael Garner, GNS/StanfordHiro Akinaga, AIST

Dan Herr, UNCG

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2012 ERM ParticipantsHiro Akinaga AISTTsuneya Ando Tokyo Inst. Tech Nobuo Aoi PanasonicBernd Appelt ASEKoyu Asai RenesasYuji Awano Keio UnivDaniel-Camille Bensahel ST MicroKirill Bolotin Vanderbilt Univ.Bill Bottoms NanonexusGeorge Bourianoff IntelBernard Capraro IntelArantxa Maestre-Caro IntelJohn Carruthers Port. State Univ.

An Chen Global Foundry

Zhihong Chen IBM

Joy Cheng IBM

Byung Jin Cho KAISTLuigi Colombo TIGeraud Dubois IBM Catherine Dubourdieu Inst. Nanotech. de LyonNathan Fritz Intel

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Michael Garner GNS/ Stanford Michael Goldstein IntelWilfried Haensch IBMDan Herr UNCG/JSNNChiaHua Ho NDLJim Hutchby SRCBerry Jonker NRLTed Kamins Stanford U.Leo Kenny IntelChoong-Un Kim UT ArlingtonSean King IntelAtsuhiro Kinoshita ToshibaPaul Kohl Ga TechBlanka Magyari-Kope Stanford U.Ming-Hsiu (Eric) Lee MacronixYao-Jen Lee NDLLiew Yun Fook A-StarTimothy E. Long VA TechPrashant Majhi IntelFrancois Martin LETIFumihiro Matsukura Tohoku U.Nobuyuki Matsuzawa SonyJennifer Mckenna Intel

Yoshiyuki Miyamoto AISTKei Noda Kyoto UniversityYaw Obeng NISTChris Ober Cornell UnivMatsuto Ogawa Kobe UniversityKatsumi Ohmori. TOKYutaka Ohno Nagoya UniversityTomas Palacios MITSamuel Pan TSMCEr-Xaun Ping AMATJoel Plawsky RPIDave Roberts NanteroTadashi Sakai ToshibaGurtej Sandhu MicronHideyki Sasaki Toshiba NanoanalysisShintaro Sato AISTAkihito Sawa AISTBarry Schechtman INSECSadasivan Shankar IntelMatt Shaw IntelTakahiro Shinada AISTMichelle Simmons UNSWKaushal Singh AMAT.

Satofumi Souma Koube UnivNaoyuki Sugiyama TorayShin-ichi Takagi U. of TokyoMasahiro Takemura NIMSKoki Tamura TOK AmericaYoshihiro Todokoro NAISTYasuhide Tomioka AISTLuan Tran TSMCPeter Trefonas DowMing-Jin Tsai ITRIWilman Tsai Intel Emanuel Tutuc UT Austin Ken Uchida Keio Univ.Kang Wang UCLAH.S. Philip Wong Stanford U.Dirk Wouters IMECWen-Li Wu NISTShigeru Yamada IbidenHiroshi Yamaguchi NTTToru Yamaguchi NTTFu-Liang Yang NDLHiroaki Yoda ToshibaVictor Zhirnov SRCPaul Zimmerman IntelEhrenfried Zschech Fraunhofer Inst.

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2012 Key Messages

• 2011 ERM Chapter will not be updated in 2012• ERM is preparing for 2013 ITRS Rewrite• Aligning with iTWG New Requirements• Planning e-Workshops• Identifying potential material transitions• Identifying support capabilities needed• Significant Challenges for all Materials

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Memory Materials

• Ferroelectric Memory• Nanoelectromechanical (NEMM)• Redox RAM• Mott Memory• Macromolecular • Molecular

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Extending CMOS Logic Alternate Channel Materials

Alternate Channel Materials

-n-Ge & p-III-V

-Nanowires

-Graphene

-Carbon Nanotubes

III-V Heterostructures(L. Samuelson, Lund Univ.)

A. Geim, Manchester U.

Assess

Materials Performance

Gate materials

Contacts

Interfaces

MOS

-Identify Novel Metrology & Modeling Needs

D. Zhou, USC

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Beyond CMOS LogicMaterials & Interfaces

Assess• Ferromagnetic Materials, Dilute Magnetic Semiconductors• Complex Metal Oxides• Strongly Correlated Electron State Materials (FE, FM, FE & FM)• Molecules• Interfaces

Spin StateFerroelectric

Polarization

Negative Capacitance FET•Individual or Collective

Charge Based States Other Than Charge Only

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ERM Device Material e-Workshops

• Redox RAM Materials• Deterministic and Conformal Doping• Nanoscale Contact Resistivity• Carbon Electronics (Nanotubes and Graphene)• Spin Materials & Out of Plane MTJ Materials• Strongly Correlated Electron Materials• Modeling of Complex Transition Metal Oxide

Properties

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Lithography Materials

• Continuing evaluation of novel resist for 193i and EUV• LER Rectification to reduce LER and improve line CD control• Contact/Via Rectification to reduce size and improve CD control • Pattern Density Multiplication for high density smaller features

Ruiz, et. al.

Science, 2008

Contact/Via Rectification

Density Multiplication

LER Rectification

Stoykovich, et. al.

Macromolecules, 2010

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Survey on DSA

• Contact rectification and pattern density multiplication had the highest support

• Most industry responders had plans to evaluate DSA

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Interconnect Materials

Via

Wire

Via

Wire

InterconnectsUltra-thin Barrier Layers (sub 2nm)• NH2 terminated Self Assembled Monolayers (SAM)• GrapheneUltra low κ ILD•Integration must be a significant focusNovel Interconnects & Vias•Graphene, Carbon Nanotubes, Nanocomposites

Workshops•Ultralow k ILD: Completed

•Ultrathin Cu Barrier Layers: Completed

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Assembly & Packagee-Workshops

• Residue Free Adhesives• Insulating polymers with high in plane thermal

conductivity [3-5 W/m-K]• Electrically conductive flexible adhesive contact

material for heterogeneous integration• <200C process temperature photopatternable

dielectric interposer• Nanosolders with high electrical and thermal

conductivity• Novel EMI shielding materials (graphene, CNT, etc.)

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Hexagon of Assembly Material Requirements

• Highly coupled Material Properties• Apply novel materials to achieve optimal performance

CTE

ModulusFracture

Toughness

Functional

Properties

Moisture

ResistanceAdhesion

Examples

Thermal Interface Mat.

Mold Compound

Underfill

Adhesives

Epoxy

CTE depends on volume fraction

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ESH Challenges• Materials needed to overcome significant

technical challenges– Low energy processes and new materials for low

energy integrated circuits– Few materials can meet requirements– Some materials have known hazards or

uncharacterized ESH properties– Stimulate ESH research in uncharacterized materials– Good risk management methods for materials ESH

in Research, Development & Manufacturing – Lifecycle Assessment & Management – Efficient use of materials

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Summary

• 2011 ERM Chapter will not be updated in 2012• ERM is preparing for 2013 ITRS Rewrite• Aligning with iTWG New Requirements• Planning e-Workshops• Significant Challenges for all Materials

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