Lattice Thermal Conductivity and Stability of 'TE …...Boundary scattering on the thermal conductivity of TiNiSn-based HH alloys, S. Bhattacharya, et.al. Phys. Rev. B, 77, 184203

DOE-EERE Thermoelectric Applications WorkshopThursday Oct 1st 2009

Lattice Thermal Conductivity and Stability of ldquoTE Nano-Compositesrdquo

Prof Terry M Tritt email ttrittclemsonedu

httpwwwclemsoneducaml

Dept of Physics amp Astronomy Clemson University Clemson SC

Motivation for Low Dimensional TE Materials ConductorInsulator

electron phonon

Hicks amp Dresselhaus PRB 1993 Dresselhaus Plenary Talk - ICT 05 Adv Mats 07

Quantum Enhancement Increase Seebeck

Interface Scattering Large Kapitza Resistance

Reduce κL

Relative Importance of α2ρ and κ

Venkatasubramanian etal Nature 413 597 2001

T Harman etal Science 297 2229 (2002)

Bi2Te3Sb2Te3 Superlattice

PbTePbSeTe Quantum Dots

κ

Relative Importance of α2ρ and Bi2Te3Sb2Te3 Superlattice


κ Thermal Conductivity Reduction



A Hochbaum etal Nature 451-p 163 (2008) Jan 2008 -- LBNL amp Berkeley Groups

TE Enhancement of Roughened Si Nanowires

Surface Roughness Above

Leads to Reduction in Thermal Conductivity (Left)

Embedding Nanoparticles in Crystalline Semiconductors

bull Reduction in κL (ldquonano- phonon effectrdquo) Depends on ML thickness (ErAs nano)

bull Power Factor about same but ErAs can act as a dopant

bull ZT significantly enhanced bull Theoretical analysis showed that

bull ErAs nanoparticles scatter mid to long λ phonons

bull While atomic scale defects scatter short λ phonons

W Kim etal PRL 96-045901 (2006) Santa Cruz amp Berkeley Groups ErAs nanoparticles in In053Ga047As matrix

Epitaxial growth Goal to ldquoBeat the Alloy Limitrdquo Uncorrelated Phonon Scattering

κL reduced a factor of 2 below the alloy limit

ZT enhanced a factor of 2

normalized

TE Nanomaterials Growth TE Nanocomposites amp

Grain Boundary Engineering

But First Discussion on TE Measurements

Resistivity and Seebeck Measurement Description

AB =

V

T =

(VH V

L ) (T

H T

L )

Important to measure ΔT Correctly where ΔVTE is measuredMeasure all Properties on Same Sample

VTotal = V

IR + VTE

VIR =

[V (I + ) + VTE ] [V (I ) + V

TE ]

2

Crycooler Head for R amp α Measurements System (3 Systems)

Measures two samples

Simultaneously6 K lt T lt 320 K

IC Chip receptacle

I -Cu Block Sample

∆T Heater ∆T Heater Leads

Cu Block

Cu Plate (Thermal Link)

I+ Thermo-coupleV+

V-

TH

Typical Size 2 x 2 x 8 mm3

6-10K lt T lt 320 K

bullA L Pope R T Littleton IV and Terry M Tritt Rev Sci Instrum 72 3129 (2001)

Cn

Cn

Cr 38 Cu wire with stycast

Stable T base

Strain Gauge

Phosphor Bronze wire

losss s

PRIP TA

LP -=

I = 2 1

Pope etal Cryogenics 41 725 (2001)

Thermal Conductivity -Bulk Samples

Sample Width asymp 3mm

Steady State Method (6K to 320 K)

P vs ΔT Sweeps Constant T

asymp 8 mm

PSam = K

Tot

A

LS

JT

Low Temp Thermal Conductivity


Assembled on Cryocooler

QD Socket

Thermal Base

Socket Collar

Radiation Can (Gold Plated)

Thermal Resistor (Brass)

Absolute steady state technique

Two samples may be mounted simultaneous

Dismountable puck

The puck socket attached on a Cryocooler

Three Separate Systems

Thermal conductivity measured from 6 K to 300 K

A L Pope B M Zawilski and Terry M Tritt Cryogenics 41 725 (2001)

High Temp Thermal Conductivity NETZSCH LFA 457 Thermal Diffusivity (d)

High Temperature DSC Or Conductivity (κ)Measure CP To 1500˚C Temp Range RT to 1100˚CThermal Stability amp Heat Capacity

CV

= dD

1 = d DC

V

κ = thermal conductivity d = thermal diffusivity ρD = density CV = Heat Capacity

Schematic of the flash method

t12 = Rise half time d = thermal diffusivity L = sample thickness

Temperature increase for various experimental conditions

d = 01388 L

2

t12

(

I

)

J W Parker etal J Appl Phys 32 1679 (1961)

assumes ideal conditions of adiabatic sample and instantaneous pulse heating

= dDC

V

Thermal Analysis Systems

5

55

6

65

7

75

200 400 600 800 1000 1200

Hf X Zr

Y Ti

Z Ni

A Pt

B Sn

0975 Sb

0025

Tota

l The

rmal

Con

duct

ivity

(Wm

-1 K

-1)

Temperature (K)

HH113

HH111

HH109 Hf

06 Zr

025 Ti

015 Ni

Hf 075

Zr 025

Ni

Hf 075

Zr 025

Ni 09

Pt 01

1000 2000 3000 4000 5000 6000 7000 8000 9000 Temperature degC

01500

02000

02500

03000

03500

Cp (J(gK))

8999 degC

Sample CG-5-111 (Hf075Zr025NiSn0975b0025) Instrument DSC 404 C Sample Mass 28005 mg Crucible Pt+Al2O3-liner Armosphere Argon

High Temp DSC in conjunction with Laser Flash --- Shows Thermal Stability of Half Heusler Alloys to 900˚C

Derived Thermal Conductivity Half Heusler Alloys to 900˚C

UVA amp Clemson Results

S Culp S J Poon amp T M Tritt APL 2006

Ti1-x-yZrxHfyNi Sn0975Sb0025

Good Agreement From the Two Systems

Very Different Techniques

Two Carrier Heat Conduction

Commercial High Temperature

R amp α System

25˚C to 800˚C

Automated

Enhanced Through put

Less Down Time

Acquisition of Commercial High Temperature R amp α System

ULVAC (ZEM-2) Commercial high tempR amp S system

Close-up view of mounted sample

bullTemp range- 30 to 800oC bullSample size 2mm x 2mm x 7mm minbullBoth rod amp bar samples can be mountedbullR amp S data collected simultaneouslybullCompletely automated systembullDesign allows rapid data collection

Water cooled quartz lamp furnace

Sample

Open position showing sampleamp thermocouples

Thermocouples

See also- V Ponnalbalam et al Rev Sci Instrum 2006

R amp S data of TiNiSn099Sb001 nano-composites

Data collected using both low temp setup and ULVAC (ZEM-2) high temp systemData matched well at RT

p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K

Elementary Error Propagation

Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T

High Temp Measurements d minus (κ) by Laser Flash

amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T

Low Temp Measurements Κ minus (κ) by Steady State

P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

Measure all on One Sample


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A

At best asymp 5-7 uncertainly on ZT

Same Sample -- A cancels



Summary Slide Highlights

Expanded Version at End

Skutterudites Double-filled In

xYb

yCo

4Sb

12 Skutterudites J Peng etal

Jour of Appl Phys 105 084907 (2009) Jour of Appl Phys 104 053710 (2008)

La09

CoFe3Sb

12-CoSb

3 Skutterudite Nanocomposites PAlboni etal

Jour of Appl Phys 103 113707 (2008)

Half Heusler Alloys (ZrHf)Co(SbSn) half-Heusler phases as p-type thermoelectric materials

Slade R Culp etal Appl Phys Letters 93 022105 (2008)

Boundary scattering on the thermal conductivity of TiNiSn-based HH alloys

S Bhattacharya etal Phys Rev B 77 184203 (2008)

Oxide TE Mats In-plane thermal conductivity of Na

xCo

2O

4 single crystals

Xiaofeng Tang et al Phys Stat Sol A 205 (5) 1152 (2008)

Various TE Materials Research Clemson

PbTe

Nanocomposites fabricated by Hydrothermal solvothermal nano-plantingcoating

Better homogenous distribution

of Nanostructures

10microm

o Nanoparticles are easy to

form aggregates

o In TE nanocomposites

inhomogeneity may de-

base the TE performance

Nanoparticle-clusters

Hot press Relatively-

homogeneous nanocompositenanocomposite

Mechanical mixing

Bulk matrixBulk matrix

-grain-grain

Solvothermal nano-coating

An alkali metal hydrothermal treatment technique

Various

alkali metal

(Na K) Hydrothermally treat compounds

solution

autoclave Bulk TE raw powder

150˚C for 36 hr alkali metal hydrothermal treatment process an admixture of 6 mmol NaOH (KOH)

2 mmol NaF (KF) 3 mmol NaBH4 (KBH4) 35 ml distilled water

and ~ 25 g Pb075Sn025Te bulk reference powder were loaded into

a 45 ml Teflon-lined autoclave

Remove

powder

wash amp dry

pellet

Hot press

ZT as κL

Hydrothermal Treatment of Pb075Sn025Te

Observe 20-50 nm Clusters On Surface of Pb075Sn025Te

Hot Pressed to T gt 400˚C (Te rich interface)

X Ji etal Phys-Stat-Sol-a-206 221 (2009)


-grain-grain

Hydrothermal Treat with NaOH

Normalized Properties

Dashed Line -- Bulk reference

Enhancements in ZT Due to Reduction

in κL

Hydrothermal Treatment of Pb075Sn025Te X Ji etal Phys-Stat-Sol-a-206 221 (2009)

Bulk Ref

Novel Nanostructures and High ZTin Melt Spun p-type Bi052Sb148Te3

Collaboration with Prof X Tang and student Wenjie Xie Wuhan Univ of Tech

WXie etal Applied Phys Letters 94 102111-09 Also Jour Appl Phys 2009

Supported by China Scholarship Program973 Programs and China NSFUS Dept of Energy EPSCoR

Novel Nanostructures in Melt Spun p-type Bi052Sb148Te3

Zone Melted Ingot Melt Spun Ribbons

Collaboration w Prof X Tang and student Wenjie Xie Wuhan Univ of Tech

WXie etal Applied Phys Letters 94 102111-2009


Spark Plasma Sintering Conditions

300- 400 ˚C For several minutes

Force asymp 3-5 KN




Contact Surface Free Surface

Amorphous Microstructure near

Contact surface

5-15 nm Nanocrystalline Regions or grains near CS

Large dendritic

regions near free surface



Spark Plasma Sintering System 1500 Amps

Sample In Mold

TE Properties of Melt Spun p-type Bi052Sb148Te3

But the MS-SPS Sample Exhibited lower κL and thus

Higher ZT ( ZT asymp 15) Than other samples



Low Temperature (T lt 300K) Properties of MS-SPS -- Bi2Te3

Low Temperature (κ) by Steady State Technique(see Cryogenics- Pope etal 2000)

High Temp Using (κ) Laser Flash and DSC

Increased Demands for Alternative Energy Systems Significant Progress in TErsquos in Last 10 Years Thermoelectrics (Shift to Waste Heat Recovery)

Efficiency amp Stability is a Materials Issue Thermoelectric Materials Research

ldquoDesigner Materialsrdquo Approach Complex Structures amp Transport Properties Challenges in Theory Synthesis amp Characterization

Low Dimensional TE Materials - - High ZT Due primarily to reductions in lattice thermal conductivity

Many Opportunities in Nanocomposites ldquoGrain Surface Engineeringrdquo or Nanoscaled Bulk TE Materials or Nanocomposites (Future-Spark Plasma Sintering)

More Theoretical Modeling amp Insight Needed

Concluding Remarks

ZT asymp 14

Acknowledgements

Dept of Energy DOE EPSCoR Implementation Grant(DOE DE FG02-04ER-46139)

SC EPSCoR amp Clemson University

DARPA amp ONR for Previous Support Jeff Sharp Marlow Inds

Air Force Research Laboratory Materials andManufacturing Directorate (AFRLRXLMD)

Motivation for Low Dimensional TE Materials ConductorInsulator

electron phonon

Hicks amp Dresselhaus PRB 1993 Dresselhaus Plenary Talk - ICT 05 Adv Mats 07

Quantum Enhancement Increase Seebeck

Interface Scattering Large Kapitza Resistance

Reduce κL






κ




















normalized





AB =

V

T =

(VH V

L ) (T

H T

L )


VTotal = V

IR + VTE

VIR =

[V (I + ) + VTE ] [V (I ) + V

TE ]

2




IC Chip receptacle

I -Cu Block Sample


Cu Block


I+ Thermo-coupleV+

V-

TH


6-10K lt T lt 320 K


Cn

Cn


Stable T base

Strain Gauge


losss s

PRIP TA

LP -=

I = 2 1






asymp 8 mm

PSam = K

Tot

A

LS

JT




QD Socket

Thermal Base

Socket Collar





Dismountable puck







CV

= dD

1 = d DC

V





d = 01388 L

2

t12

(

I

)



= dDC

V


5

55

6

65

7

75

200 400 600 800 1000 1200

Hf X Zr

Y Ti

Z Ni

A Pt

B Sn

0975 Sb

0025

Tota

l The

rmal

Con

duct

ivity

(Wm

-1 K

-1)

Temperature (K)

HH113

HH111

HH109 Hf

06 Zr

025 Ti

015 Ni

Hf 075

Zr 025

Ni

Hf 075

Zr 025

Ni 09

Pt 01


01500

02000

02500

03000

03500

Cp (J(gK))

8999 degC











R amp α System

25˚C to 800˚C

Automated


Less Down Time






Sample


Thermocouples




p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements










κ




















normalized





AB =

V

T =

(VH V

L ) (T

H T

L )


VTotal = V

IR + VTE

VIR =

[V (I + ) + VTE ] [V (I ) + V

TE ]

2




IC Chip receptacle

I -Cu Block Sample


Cu Block


I+ Thermo-coupleV+

V-

TH


6-10K lt T lt 320 K


Cn

Cn


Stable T base

Strain Gauge


losss s

PRIP TA

LP -=

I = 2 1






asymp 8 mm

PSam = K

Tot

A

LS

JT




QD Socket

Thermal Base

Socket Collar





Dismountable puck







CV

= dD

1 = d DC

V





d = 01388 L

2

t12

(

I

)



= dDC

V


5

55

6

65

7

75

200 400 600 800 1000 1200

Hf X Zr

Y Ti

Z Ni

A Pt

B Sn

0975 Sb

0025

Tota

l The

rmal

Con

duct

ivity

(Wm

-1 K

-1)

Temperature (K)

HH113

HH111

HH109 Hf

06 Zr

025 Ti

015 Ni

Hf 075

Zr 025

Ni

Hf 075

Zr 025

Ni 09

Pt 01


01500

02000

02500

03000

03500

Cp (J(gK))

8999 degC











R amp α System

25˚C to 800˚C

Automated


Less Down Time






Sample


Thermocouples




p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements





κ




















normalized





AB =

V

T =

(VH V

L ) (T

H T

L )


VTotal = V

IR + VTE

VIR =

[V (I + ) + VTE ] [V (I ) + V

TE ]

2




IC Chip receptacle

I -Cu Block Sample


Cu Block


I+ Thermo-coupleV+

V-

TH


6-10K lt T lt 320 K


Cn

Cn


Stable T base

Strain Gauge


losss s

PRIP TA

LP -=

I = 2 1






asymp 8 mm

PSam = K

Tot

A

LS

JT




QD Socket

Thermal Base

Socket Collar





Dismountable puck







CV

= dD

1 = d DC

V





d = 01388 L

2

t12

(

I

)



= dDC

V


5

55

6

65

7

75

200 400 600 800 1000 1200

Hf X Zr

Y Ti

Z Ni

A Pt

B Sn

0975 Sb

0025

Tota

l The

rmal

Con

duct

ivity

(Wm

-1 K

-1)

Temperature (K)

HH113

HH111

HH109 Hf

06 Zr

025 Ti

015 Ni

Hf 075

Zr 025

Ni

Hf 075

Zr 025

Ni 09

Pt 01


01500

02000

02500

03000

03500

Cp (J(gK))

8999 degC











R amp α System

25˚C to 800˚C

Automated


Less Down Time






Sample


Thermocouples




p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements



















normalized





AB =

V

T =

(VH V

L ) (T

H T

L )


VTotal = V

IR + VTE

VIR =

[V (I + ) + VTE ] [V (I ) + V

TE ]

2




IC Chip receptacle

I -Cu Block Sample


Cu Block


I+ Thermo-coupleV+

V-

TH


6-10K lt T lt 320 K


Cn

Cn


Stable T base

Strain Gauge


losss s

PRIP TA

LP -=

I = 2 1






asymp 8 mm

PSam = K

Tot

A

LS

JT




QD Socket

Thermal Base

Socket Collar





Dismountable puck







CV

= dD

1 = d DC

V





d = 01388 L

2

t12

(

I

)



= dDC

V


5

55

6

65

7

75

200 400 600 800 1000 1200

Hf X Zr

Y Ti

Z Ni

A Pt

B Sn

0975 Sb

0025

Tota

l The

rmal

Con

duct

ivity

(Wm

-1 K

-1)

Temperature (K)

HH113

HH111

HH109 Hf

06 Zr

025 Ti

015 Ni

Hf 075

Zr 025

Ni

Hf 075

Zr 025

Ni 09

Pt 01


01500

02000

02500

03000

03500

Cp (J(gK))

8999 degC











R amp α System

25˚C to 800˚C

Automated


Less Down Time






Sample


Thermocouples




p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements















normalized





AB =

V

T =

(VH V

L ) (T

H T

L )


VTotal = V

IR + VTE

VIR =

[V (I + ) + VTE ] [V (I ) + V

TE ]

2




IC Chip receptacle

I -Cu Block Sample


Cu Block


I+ Thermo-coupleV+

V-

TH


6-10K lt T lt 320 K


Cn

Cn


Stable T base

Strain Gauge


losss s

PRIP TA

LP -=

I = 2 1






asymp 8 mm

PSam = K

Tot

A

LS

JT




QD Socket

Thermal Base

Socket Collar





Dismountable puck







CV

= dD

1 = d DC

V





d = 01388 L

2

t12

(

I

)



= dDC

V


5

55

6

65

7

75

200 400 600 800 1000 1200

Hf X Zr

Y Ti

Z Ni

A Pt

B Sn

0975 Sb

0025

Tota

l The

rmal

Con

duct

ivity

(Wm

-1 K

-1)

Temperature (K)

HH113

HH111

HH109 Hf

06 Zr

025 Ti

015 Ni

Hf 075

Zr 025

Ni

Hf 075

Zr 025

Ni 09

Pt 01


01500

02000

02500

03000

03500

Cp (J(gK))

8999 degC











R amp α System

25˚C to 800˚C

Automated


Less Down Time






Sample


Thermocouples




p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements









AB =

V

T =

(VH V

L ) (T

H T

L )


VTotal = V

IR + VTE

VIR =

[V (I + ) + VTE ] [V (I ) + V

TE ]

2




IC Chip receptacle

I -Cu Block Sample


Cu Block


I+ Thermo-coupleV+

V-

TH


6-10K lt T lt 320 K


Cn

Cn


Stable T base

Strain Gauge


losss s

PRIP TA

LP -=

I = 2 1






asymp 8 mm

PSam = K

Tot

A

LS

JT




QD Socket

Thermal Base

Socket Collar





Dismountable puck







CV

= dD

1 = d DC

V





d = 01388 L

2

t12

(

I

)



= dDC

V


5

55

6

65

7

75

200 400 600 800 1000 1200

Hf X Zr

Y Ti

Z Ni

A Pt

B Sn

0975 Sb

0025

Tota

l The

rmal

Con

duct

ivity

(Wm

-1 K

-1)

Temperature (K)

HH113

HH111

HH109 Hf

06 Zr

025 Ti

015 Ni

Hf 075

Zr 025

Ni

Hf 075

Zr 025

Ni 09

Pt 01


01500

02000

02500

03000

03500

Cp (J(gK))

8999 degC











R amp α System

25˚C to 800˚C

Automated


Less Down Time






Sample


Thermocouples




p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements






AB =

V

T =

(VH V

L ) (T

H T

L )


VTotal = V

IR + VTE

VIR =

[V (I + ) + VTE ] [V (I ) + V

TE ]

2




IC Chip receptacle

I -Cu Block Sample


Cu Block


I+ Thermo-coupleV+

V-

TH


6-10K lt T lt 320 K


Cn

Cn


Stable T base

Strain Gauge


losss s

PRIP TA

LP -=

I = 2 1






asymp 8 mm

PSam = K

Tot

A

LS

JT




QD Socket

Thermal Base

Socket Collar





Dismountable puck







CV

= dD

1 = d DC

V





d = 01388 L

2

t12

(

I

)



= dDC

V


5

55

6

65

7

75

200 400 600 800 1000 1200

Hf X Zr

Y Ti

Z Ni

A Pt

B Sn

0975 Sb

0025

Tota

l The

rmal

Con

duct

ivity

(Wm

-1 K

-1)

Temperature (K)

HH113

HH111

HH109 Hf

06 Zr

025 Ti

015 Ni

Hf 075

Zr 025

Ni

Hf 075

Zr 025

Ni 09

Pt 01


01500

02000

02500

03000

03500

Cp (J(gK))

8999 degC











R amp α System

25˚C to 800˚C

Automated


Less Down Time






Sample


Thermocouples




p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements








IC Chip receptacle

I -Cu Block Sample


Cu Block


I+ Thermo-coupleV+

V-

TH


6-10K lt T lt 320 K


Cn

Cn


Stable T base

Strain Gauge


losss s

PRIP TA

LP -=

I = 2 1






asymp 8 mm

PSam = K

Tot

A

LS

JT




QD Socket

Thermal Base

Socket Collar





Dismountable puck







CV

= dD

1 = d DC

V





d = 01388 L

2

t12

(

I

)



= dDC

V


5

55

6

65

7

75

200 400 600 800 1000 1200

Hf X Zr

Y Ti

Z Ni

A Pt

B Sn

0975 Sb

0025

Tota

l The

rmal

Con

duct

ivity

(Wm

-1 K

-1)

Temperature (K)

HH113

HH111

HH109 Hf

06 Zr

025 Ti

015 Ni

Hf 075

Zr 025

Ni

Hf 075

Zr 025

Ni 09

Pt 01


01500

02000

02500

03000

03500

Cp (J(gK))

8999 degC











R amp α System

25˚C to 800˚C

Automated


Less Down Time






Sample


Thermocouples




p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements





Cn

Cn


Stable T base

Strain Gauge


losss s

PRIP TA

LP -=

I = 2 1






asymp 8 mm

PSam = K

Tot

A

LS

JT




QD Socket

Thermal Base

Socket Collar





Dismountable puck







CV

= dD

1 = d DC

V





d = 01388 L

2

t12

(

I

)



= dDC

V


5

55

6

65

7

75

200 400 600 800 1000 1200

Hf X Zr

Y Ti

Z Ni

A Pt

B Sn

0975 Sb

0025

Tota

l The

rmal

Con

duct

ivity

(Wm

-1 K

-1)

Temperature (K)

HH113

HH111

HH109 Hf

06 Zr

025 Ti

015 Ni

Hf 075

Zr 025

Ni

Hf 075

Zr 025

Ni 09

Pt 01


01500

02000

02500

03000

03500

Cp (J(gK))

8999 degC











R amp α System

25˚C to 800˚C

Automated


Less Down Time






Sample


Thermocouples




p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements







QD Socket

Thermal Base

Socket Collar





Dismountable puck







CV

= dD

1 = d DC

V





d = 01388 L

2

t12

(

I

)



= dDC

V


5

55

6

65

7

75

200 400 600 800 1000 1200

Hf X Zr

Y Ti

Z Ni

A Pt

B Sn

0975 Sb

0025

Tota

l The

rmal

Con

duct

ivity

(Wm

-1 K

-1)

Temperature (K)

HH113

HH111

HH109 Hf

06 Zr

025 Ti

015 Ni

Hf 075

Zr 025

Ni

Hf 075

Zr 025

Ni 09

Pt 01


01500

02000

02500

03000

03500

Cp (J(gK))

8999 degC











R amp α System

25˚C to 800˚C

Automated


Less Down Time






Sample


Thermocouples




p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements







CV

= dD

1 = d DC

V





d = 01388 L

2

t12

(

I

)



= dDC

V


5

55

6

65

7

75

200 400 600 800 1000 1200

Hf X Zr

Y Ti

Z Ni

A Pt

B Sn

0975 Sb

0025

Tota

l The

rmal

Con

duct

ivity

(Wm

-1 K

-1)

Temperature (K)

HH113

HH111

HH109 Hf

06 Zr

025 Ti

015 Ni

Hf 075

Zr 025

Ni

Hf 075

Zr 025

Ni 09

Pt 01


01500

02000

02500

03000

03500

Cp (J(gK))

8999 degC











R amp α System

25˚C to 800˚C

Automated


Less Down Time






Sample


Thermocouples




p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements





1 = d DC

V





d = 01388 L

2

t12

(

I

)



= dDC

V


5

55

6

65

7

75

200 400 600 800 1000 1200

Hf X Zr

Y Ti

Z Ni

A Pt

B Sn

0975 Sb

0025

Tota

l The

rmal

Con

duct

ivity

(Wm

-1 K

-1)

Temperature (K)

HH113

HH111

HH109 Hf

06 Zr

025 Ti

015 Ni

Hf 075

Zr 025

Ni

Hf 075

Zr 025

Ni 09

Pt 01


01500

02000

02500

03000

03500

Cp (J(gK))

8999 degC











R amp α System

25˚C to 800˚C

Automated


Less Down Time






Sample


Thermocouples




p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements







d = 01388 L

2

t12

(

I

)



= dDC

V


5

55

6

65

7

75

200 400 600 800 1000 1200

Hf X Zr

Y Ti

Z Ni

A Pt

B Sn

0975 Sb

0025

Tota

l The

rmal

Con

duct

ivity

(Wm

-1 K

-1)

Temperature (K)

HH113

HH111

HH109 Hf

06 Zr

025 Ti

015 Ni

Hf 075

Zr 025

Ni

Hf 075

Zr 025

Ni 09

Pt 01


01500

02000

02500

03000

03500

Cp (J(gK))

8999 degC











R amp α System

25˚C to 800˚C

Automated


Less Down Time






Sample


Thermocouples




p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements






5

55

6

65

7

75

200 400 600 800 1000 1200

Hf X Zr

Y Ti

Z Ni

A Pt

B Sn

0975 Sb

0025

Tota

l The

rmal

Con

duct

ivity

(Wm

-1 K

-1)

Temperature (K)

HH113

HH111

HH109 Hf

06 Zr

025 Ti

015 Ni

Hf 075

Zr 025

Ni

Hf 075

Zr 025

Ni 09

Pt 01


01500

02000

02500

03000

03500

Cp (J(gK))

8999 degC











R amp α System

25˚C to 800˚C

Automated


Less Down Time






Sample


Thermocouples




p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements










R amp α System

25˚C to 800˚C

Automated


Less Down Time






Sample


Thermocouples




p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements






R amp α System

25˚C to 800˚C

Automated


Less Down Time






Sample


Thermocouples




p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements









Sample


Thermocouples




p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements







p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements





p = R A

LV

K = K L

TC

A Q = Q(abc)

cQ = aQ

aa ca +

aQ

ab cb +

aQ

ac cc

bQ

Q = ba

a + bb

b + bc

c

DZT

ZT = 2

Da

a + DT

T + Dp

p + DK

K


Dp

p = DR

R + Dw

w + Dt

t + DL

V

LV

ZT = 2 T

= 2 T

E +

L

= 2

T


amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements






amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A



amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements






amp DSC (CP)

= dDC

V

ZT = 2 T

=

2 T

E + L

= 2

T


P = KT = I 2 R P

Loss

p = R A

LV

1 = K L

TC

A

ZT = 2

T

=

2T

R A L

V

K

LTC

A








xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements










xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements






xYb

yCo

4Sb



La09

CoFe3Sb

12-CoSb








xCo

2O

4 single crystals



PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements





PbTe



of Nanostructures

10microm


form aggregates







Mechanical mixing


-grain-grain



Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements






Various

alkali metal


solution






Remove

powder

wash amp dry

pellet

Hot press

ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements





ZT as κL






-grain-grain





in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements








in κL


Bulk Ref












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements
















Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements












Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements








Force asymp 3-5 KN






Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements








Contact surface


Large dendritic





Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements






Sample In Mold















Concluding Remarks

ZT asymp 14

Acknowledgements



















Concluding Remarks

ZT asymp 14

Acknowledgements














Concluding Remarks

ZT asymp 14

Acknowledgements











Concluding Remarks

ZT asymp 14

Acknowledgements





Acknowledgements





Documents

Lattice Thermal Conductivity and Stability of 'TE …...Boundary scattering on the thermal conductivity of TiNiSn-based HH alloys, S. Bhattacharya, et.al. Phys. Rev. B, 77, 184203