N Channel JFETs

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J/SST201 SeriesVishay SiliconixNew Product

Document Number: 70233

S-03006—Rev. F, 17-Feb-03

www.vishay.com

6-1

N-Channel JFETs

J201 SST201

J202 SST202J204 SST204

PRODUCT SUMMARY

Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)

J/SST201 -0.3 to -1.5 -40 0.5 0.2

J/SST202 -0.8 to -4 -40 1 0.9

J/SST204 -0.3 to -2 -25 0.5 0.2

FEATURES BENEFITS APPLICATIONS

D Low Cutoff Voltage: J201 <1.5 V

DHigh Input Impedance

D Very Low Noise

D High Gain: AV = 80 @ 20 mA

D Full Performance from Low VoltagePower Supply: Down to 1.5 V

D Low Signal Loss/System Error

D High System Sensitivity

D High Quality Low-Level SignalAmplification

D High-Gain, Low-Noise Amplifiers

DLow-Current, Low-VoltageBattery-Powered Amplifiers

D Infrared Detector Amplifiers

D Ultra High Input ImpedancePre-Amplifiers

DESCRIPTION

The J/SST201 series features low leakage, very low noise,and low cutoff voltage for use with low-level power supplies.The J/SST201 is excellent for battery powered equipment andlow current amplifiers.

The J series, TO-226 (TO-92) plastic package, provides lowcost, while the SST series, TO-236 (SOT-23) package,provides surface-mount capabil ity. Both the J and SST series

are available in tape-and-reel for automated assembly (seePackaging Information).

For similar products in TO-206AA (TO-18) packaging, see the2N4338/4339/4340/4341 data sheet.

For applications information see AN102 and AN106.

TO-226AA(TO-92)

Top View

J201J202J204

D

G

S

1

2

3

D

S

G

TO-236(SOT-23)

2

3

1

Top View

SST201 (P1)*SST202 (P2)*SST204 (P4)*

*Marking Code for TO-236



J/SST201 Series

Vishay Siliconix New Product

www.vishay.com

6-2


S-03006—Rev. F, 17-Feb-03

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage -40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Temperature (1 / 16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .

Storage Temperature -55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature -55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipationa 350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Notesa. Derate 2.8 mW/ _C above 25_C

SPECIFICATIONS (T A = 25_C UNLESS OTHERWISE NOTED)

Limits

J/SST201 J/SST202 J/SST204c

Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit

Static

Gate-SourceBreakdown Voltage

V(BR)GSS IG = - 1 mA , VDS = 0 V -40 -40 -25V

Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 10 nA -0.3 -1.5 -0.8 -4 -0.3 -2

Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 0.2 1 0.9 4.5 0.2 3 mA

VGS = -20 V, VDS = 0 V -2 -100 -100 -100 pA

Gate Reverse Current IGSSTA = 125_C -1 nA

Gate Operating Current IG VDG = 10 V, ID = 0.1 mA -2

Drain Cutoff Current ID(off) VDS = 15 V, VGS = -5 V 2pA

Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V

Dynamic

Common-SourceForward Transconductance

gfsVDS = 15 V, VGS = 0 V

f = 1 kHz0.5 1 0.5 mS

Common-SourceInput Capacitance

CissVDS = 15 V, VGS = 0 V

4.5

Common-SourceReverse Transfer Capacitance

Crss

,f = 1 MHz

1.3

pF

Equivalent Input Noise Voltage enVDS = 10 V, VGS = 0 V

f = 1 kHz6

nV ⁄ √Hz

Notesa. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NPA, NHb. Pulse test: PWv300 ms duty cyclev3%.c. See 2N/SST5484 Series for J204 typical characteristic curves.





S-03006—Rev. F, 17-Feb-03

www.vishay.com

6-3

TYPICAL CHARACTERISTICS (T A = 25_C UNLESS OTHERWISE NOTED)

Gate Leakage Current

2

0 12 1684 20

1.6

1.2

0.8

0.4

0

Output Characteristics

VDS - Drain-Source Voltage (V)

VGS = 0 V

-0.6 V

-0.9 V

-0.3 V

VGS(off) = -1.5 V

-1.2 V

On-Resistance and Output Conductancevs. Gate-Source Cutoff Voltage

Drain Current and Transconductancevs. Gate-Source Cutoff Voltage

10

0.1 pA

1 pA

10 pA

100 pA

1 nA

10 nA

0 15 30

VDG - Drain-Gate Voltage (V)

IGSS @ 125_C

IGSS @ 25_C

TA = 125_C

TA = 25_C

ID = 100 mA

ID = 500 mA

IG @ ID = 500 mA

ID = 100 mA

0

8

6

4

2

0 -5-4-3-2-1

5

4

1

3

2

0

VGS(off) - Gate-Source Cutoff Voltage (V)

IDSS @ VDS = 10 V, VGS = 0 V

gfs @ VDS = 10 V, VGS = 0 Vf = 1 kHz

gfs

IDSS

1500

0 -3 -5-4-2-1

1200

900

600

300

0

0.01 0.1 1

2

1.6

0.8

0.4

0

10

8

4

2

0

400

0 12 164 20

360

160

80

0

Output Characteristics

Common-Source Forward Transconductancevs. Drain Current

ID - Drain Current (mA)VGS(off) - Gate-Source Cutoff Voltage (V)


TA = -55_C

125_C

-0.2 V

-0.4 V

-0.1 V

-0.3 V

rDS @ ID = 100 mA, VGS = 0 Vgos @ VDS = 10 V, VGS = 0 V, f = 1 kHz

rDS

gos

6 1.2

240

8

VGS(off) = -0.7 V

25_C

-0.5 V

VDS = 10 Vf = 1 kHz

VGS(off) = -1.5 V

VGS = 0 V

g o s - O u t p u t C on d u c t an c e ( m S )

I D S S

- S a t u r a t i o n D r a i n C u r r e n t ( m A )

r D S ( o n ) - D r a i n - S o u r c e O n - R e s i s t a n c e ( Ω )

g f s - F o r w a r d T r a n s c o n d u c t a n c e ( m S )

I D - D r a i n C u r r e n t (

m A )

I D - D r a i n C u r r e n t ( m A )

I G -

G a t e L e a k a g e ( A )

gf s

-F or w ar d T r an s c on d u c t an c e ( m S )



J/SST201 Series

Vishay Siliconix New Product

www.vishay.com

6-4


S-03006—Rev. F, 17-Feb-03


2

0 -1.2 -1.6 -2-0.8-0.4

1.6

1.2

0.8

0.4

0

Transfer Characteristics

VGS - Gate-Source Voltage (V)

TA = -55_C

125_C

25_C

VDS = 10 VVGS(off) = -1.5 V500

0 -0.3-0.2-0.1 -0.4 -0.5

400

300

200

100

0

Transfer Characteristics


TA = -55_C

125_C

25_C

VDS = 10 VVGS(off) = -0.7 V

0.1 10.01

4

-1.2 -2-1.6-0.8-0.40

3.2

2.4

1.6

0.8

0

0.01 0.1 1

200

160

120

80

40

0

2000

1600

1200

800

400

0

ID - Drain Current (mA)

Circuit Voltage Gain vs. Drain Current

Transconductance vs. Gate-Source Voltage

TA = -55_C

125_C


On-Resistance vs. Drain Current


25_C

VGS(off) = -0.7 V

-1.5 VVGS(off) = -0.7 V

-1.5 V

1.5

0 -0.3 -0.4-0.2-0.1 -0.5

1.2

0.9

0.6

0.3

0

Transconductance vs. Gate-Source Voltage

TA = -55_C

125_C


25_C

VDS = 10 Vf = 1 kHz

VGS(off) = -0.7 V VDS = 10 Vf = 1 kHz

VGS(off) = -1.5 V

AV +

gfs RL

1 ) RLgos

Assume VDD = 15 V, VDS = 5 V

RL+

10 V

ID

g f s - F

o r w a r d T r a n s c o n d u c t a n c e ( m S )

g f s - F

o r w a r d T r a n s c o n d u c t a n c e ( m S )

r D S ( o n ) - D r a i n - S o u r c e O n - R e s i s t a n c e ( Ω )



A V

- V o l t a g e G a i n





S-03006—Rev. F, 17-Feb-03

www.vishay.com

6-5


Common-Source Input Capacitancevs. Gate-Source Voltage

10

0 -12 -16 -20-8-4

8

6

4

2

0

5

0 -12 -20-16-8-4

4

3

2

1

0

Common-Source Reverse Feedback Capacitancevs. Gate-Source Voltage


VDS = 0 V

10 V

f = 1 MHz


VDS = 0 V

10 V

f = 1 MHz

10 100 1 k 100 k10 k

20

16

12

8

4

0

Output Conductance vs. Drain Current


TA = -55_C

125_C

Equivalent Input Noise Voltage vs. Frequency

f - Frequency (Hz)

VDS = 10 V

ID @ 100 mA

VGS = 0 V

3

2.4

1.8

0.8

0.4

0

0.01 0.1 1

25_C

Output Characteristics300

0 0.5

240

180

120

60

0


0.1 0.2 0.3 0.4

Output Characteristics1.0

0 1.0

0.8

0.6

0.4

0.2

0


0.2 0.4 0.6 0.8

VGS(off) = -0.7 VVGS = 0 V

-0.1

-0.2

-0.3

-0.4

-0.5

VGS(off) = -1.5 V

VGS = 0 V

-0.3

-0.6

-0.9

-1.2

VDS = 10 Vf = 1 kHz

VGS(off) = -1.5 V

e n

- N o i s e V o l t a g e

n V /

H z

I D - D r a i n C u r r e n

t ( m A )

I D - D r a i n C u r r e n

t ( µ A )

g o s

- O u t p u t C o n d u c t a n c e ( µ S )

C i s s - I n p u t C a p a c i t a n c e ( p F )

C r s s - R e v e r s e F e e d b a c k C a p a c i t a n c e ( p F

)



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N Channel JFETs