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NTE6402Programmable Unijunction Transistor (PUT)

Description:

The NTE6402 is a 3terminal silicon planer passivated PNP device available in the standard plasticlow cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, andcathode.

This device has been characterized as a Programmable Unijunction Transistor (PUT), offering manyadvantages over conventional unijunction transistors. The designer can select R1 and R2 to programunijunction characteristics such as intrinsic standoff ratio, Interbase resistance, peakpoint emittecurrent, and valleypoint current to meet his particular needs.

PUTs are specifically charactrized for long interval timers and other applications requiring low leak-age and low peak point current. PUTs similar types have been characterized

Applications:D SCR Trigger

D Pulse and Timing Circuits

D OscillatorsD Sensing Circuits

D Sweep Circits

Absolute Maximum Ratings: (TA = +25C unless otherwise specified)GateCathode Forward Voltage +40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

GateCathode Reverse Voltage 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

GateAnode Reverse Voltage +40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

AnodeCathode Voltage 40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DC Anode Current (Note 1) 150mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Anode, Recurrent Forward CurrentPulse Width = 100s, Duty Cycle = 1% 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Pulse Width = 20s, Duty Cycle = 1% 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Anode, NonRecurrent Forward Current (10s) 20mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Capacitive Discharge Energy (Note 2) 250J. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Average Power (Note 1) 300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Ambient Temperature Range (Note 1) 50 to +100C. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Derate currents and powers 1%/C above 25C.

Note 2. E = 1/2 CV2 capacitor discharge energy with no current limiting.

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Electrical Characteristics: (TA = +25C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Peak Current IP VS = 10V, RG = 1M 2 A

VS = 10V, RG = 10k 5 A

Offset Voltage VT VS = 10V, RG = 1M 0.2 1.6 V

VS = 10V, RG = 10k 0.2 0.6 V

Valley Current IV VS = 10V, RG = 1M 50 AVS = 10V, RG = 10k 70 A

VS = 10V, RG = 200 1.5 mA

Anode GateAnode Leakage Current IGAO VS = 40V, TA = +25C 10 nA

VS = 40V, TA = +75C 100 nA

GateCathode Leakage Current IGKS VS = 40V, AnodeCathode Short 100 nA

Forward Voltage VF IF = 50mA 1.5 V

Pulse Output Voltage VO 6 V

Pulse Voltage Rate of Rise tr 80 ns

A G K

.190 (4.82) Min

.018 (0.45) Dia Max

.245(6.23)Max

.500(12.7)Min

.100 (2.54)

.200 (5.08) Max

.065(1.65)

.140 (3.55) Max.135 (3.45) Min

SeatingPlane

.021 (.445)Dia Max

.210(5.33)Max

.500(12.7)Min

.050 (1.27)

.165 (4.2) Max

.105 (2.67) Max

.100 (2.54)

.105 (2.67) Max

.205 (5.2) Max

A G K

TO92 TO98