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Semiconductor-on-Insulator andThin Film Transistor Technology

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MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS

ISSN 0272 - 9172

Volume 1—Laser and Electron-Beam Solid Interactions and Materials Processing,J. F. Gibbons, L. D. Hess, T. W. Sigmon, 1981

Volume 2—Defects in Semiconductors, J. Narayan, T. Y. Tan, 1981Volume 3—Nuclear and Electron Resonance Spectroscopies Applied to Materials

Science, E. N. Kaufmann, G. K. Shenoy, 1981Volume 4—Laser and Electron-Beam Interactions with Solids, B. R. Appleton,

G. K. Celler, 1982Volume 5—Grain Boundaries in Semiconductors, H. J. Leamy, G. E. Pike,

C. H. Seager, 1982Volume 6—Scientific Basis for Nuclear Waste Management, S. V. Topp, 1982Volume 7—Metastable Materials Formation by Ion Implantation, S. T. Picraux,

W. J. Choyke, 1982Volume 8—Rapidly Solidified Amorphous and Crystalline Alloys, B. H. Kear,

B. C. Giessen, M. Cohen, 1982Volume 9—Materials Processing in the Reduced Gravity Environment of Space,

G. E. Rindone, 1982Volume 10—Thin Films and Interfaces, P. S. Ho, K.-N. Tu, 1982Volume 11—Scientific Basis for Nuclear Waste Management V, W. Lutze, 1982Volume 12—In Situ Composites IV, F. D. Lemkey, H. E. Cline, M. McLean, 1982Volume 13—Laser Solid Interactions and Transient Thermal Processing of Materials,

J. Narayan, W. L. Brown, R. A. Lemons, 1983Volume 14—Defects in Semiconductors II, S. Mahajan, J. W. Corbett, 1983Volume 15—Scientific Basis for Nuclear Waste Management VI, D. G. Brookins, 1983Volume 16—Nuclear Radiation Detector Materials, E. E. Haller, H. W. Kraner, W. A.

Higinbotham, 1983Volume 17—Laser Diagnostics and Photochemical Processing for Semiconductor

Devices, R. M. Osgood, S. R. J. Brueck, H. R. Schlossberg, 1983Volume 18—Interfaces and Contacts, R. Ludeke, K. Rose, 1983Volume 19—Alloy Phase Diagrams, L. H. Bennett, T. B. Massalski, B. C. Giessen,

1983Volume 20—Intercalated Graphite, M. S. Dresselhaus, G. Dresselhaus, J. E. Fischer,

M. J. Moran, 1983Volume 21—Phase Transformations in Solids, T. Tsakalakos, 1984Volume 22—High Pressure in Science and Technology, C. Homan, R. K. MacCrone,

E. Whalley, 1984Volume 23—Energy Beam-Solid Interactions and Transient Thermal Processing,

J. C. C. Fan, N. M. Johnson, 1984Volume 24—Defect Properties and Processing of High-Technology Nonmetallic

Materials, J. H. Crawford, Jr., Y. Chen, W. A. Sibley, 1984







Volume 25—Thin Films and Interfaces II, J. E. E. Baglin, D. R. Campbell, W. K. Chu,1984

Volume 26—Scientific Basis for Nuclear Waste Management VII, G. L. McVay, 1984Volume 27—Ion Implantation and Ion Beam Processing of Materials, G. K. Hubler,

O. W. Holland, C. R. Clayton, C. W. White, 1984Volume 28—Rapidly Solidified Metastable Materials, B. H. Kear, B. C. Giessen, 1984Volume 29—Laser-Controlled Chemical Processing of Surfaces, A. W. Johnson,

D. J. Ehrlich, H. R. Schlossberg, 1984.Volume 30—Plasma Processsing and Synthesis of Materials, J. Szekely, D. Apelian,

1984Volume 31—Electron Microscopy of Materials, W. Krakow, D. Smith, L. W. Hobbs,

1984Volume 32—Better Ceramics Through Chemistry, C. J. Brinker, D. E. Clark, D. R.

Ulrich, 1984Volume 33—Comparison of Thin Film Transistor and SOI Technologies, H. W. Lam,

M. J. Thompson, 1984Volume 34—Physical Metallurgy of Cast Iron, H. Fredriksson, M. Hillerts, 1985Volume 35—Energy Beam-Solid Interactions and Transient Thermal Processing/1984,

D. K. Biegelsen, G. Rozgonyi, C. Shank, 1985Volume 36—Impurity Diffusion and Gettering in Silicon, R. B. Fair, C. W. Pearce,

J. Washburn, 1985Volume 37—Layered Structures, Epitaxy and Interfaces, J. M. Gibson, L. R. Dawson,

1985Volume 38—Plasma Synthesis and Etching of Electronic Materials, R. P. H. Chang,

B. Abeles, 1985Volume 39—High-Temperature Ordered Intermetallic Alloys, C. C. Koch, C. T. Liu,

N. S. Stoloff, 1985Volume 40—Electronic Packaging Materials Science, E. A. Giess, K.-N. Tu,

D. R. Uhlmann, 1985Volume 41—Advanced Photon and Particle Techniques for the Characterization of

Defects in Solids, J. B. Roberto, R. W. Carpenter, M. C. Wittels, 1985Volume 42—Very High Strength Cement-Based Materials, J. F. Young, 1985.Volume 43—Coal Combustion and Conversion Wastes: Characterization, Utilization,

and Disposal, G. J. McCarthy, R. J. Lauf, 1985Volume 44—Scientific Basis for Nuclear Waste Management VIII, C. M. Jantzen,

J. A. Stone, R. C. Ewing, 1985Volume 45—Ion Beam Processes in Advanced Electronic Materials and Device

Technology, F. H. Eisen, T. W. Sigmon, B. R. Appleton, 1985Volume 46—Microscopic Identification of Electronic Defects in Semiconductors, N. M.

Johnson, S. G. Bishop, G. D. Watkins, 1985







Volume 47—Thin Films: The Relationship of Structure to Properties, C. R. Aita, K. S.SreeHarsha, 1985

Volume 48—Applied Material Characterization, W. Katz, P. Williams, 1985Volume 49—Materials Issues in Applications of Amorphous Silicon Technology,

D. Adler, A. Madan, M. J. Thompson, 1985Volume 50—Scientific Basis for Nuclear Waste Management IX, L. O. Werme, 1985Volume 51—Beam-Solid Interactions and Phase Transformations, H. Kurz, G. L. Olson,

J. M. Poate, 1986Volume 52—Rapid Thermal Processing, T. O. Sedgwick, T. E. Siedel, B. Y. Tsaur, 1986Volume 53—Semiconductor-on-Insulator and Thin Film Transistor Technology,

A. Chiang. M. W. Geis, L. Pfeiffer, 1986Volume 54—Interfaces and Phenomena, R. H. Nemanich, P. S. Ho, S. S. Lau, 1986Volume 55—Biomedical Materials, M. F. Nichols, J. M. Williams, W. Zingg, 1986Volume 56—Layered Structures and Epitaxy, M. Gibson, G. C. Osbourn, R. M. Tromp,

1986Volume 57—Phase Transitions in Condensed Systems—Experiments and Theory,

G. S. Cargill III, F. Spaepen, K. N. Tu, 1986Volume 58—Rapidly Solidified Alloys and Their Mechanical and Magnetic Properties,

B. C. Giessen, D. E. Polk, A. I. Taub, 1986Volume 59—Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon,

J. W. Corbett, J. C. Mikkelsen, Jr., S. J. Pearton, S. J. Pennycook, 1986Volume 60—Defect Properties and Processing of High-Technology Nonmetallic

Materials, Y. Chen, W. D. Kingery, R. J. Stokes, 1986Volume 61—Defects in Glasses, Frank L. Galeener, David L. Griscom, Marvin J. Weber,

1986Volume 62—Materials Problem Solving with the Transmission Electron Microscope,

L. W. Hobbs, K. H. Westmacott, D. B. Williams, 1986Volume 63—Computer-Based Microscopic Description of the Structure and Properties

of Materials,]. Broughton, W. Krakow, S. T. Pantelides, 1986Volume 64—Cement-Based Composites: Strain Rate Effects on Fracture, S. Mindess,

S. P. Shah, 1986Volume 65—Fly Ash and Coal Conversion By-Products: Characterization, Utilization

and Disposal III, G. J. McCarthy , D. M. Roy, 1986Volume 66—Frontiers in Materials Education, G. L. Liedl, L. W. Hobbs, 1986






MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS VOLUME 53

Semiconductor-on-Insulator andThin Film Transistor Technology

Symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A.

EDITORS:

A. ChiangXerox Palo Alto Research Center, Palo Alto, California, U.S.A.

M. W. GeisMIT Lincoln Laboratory, Lexington, Massachusetts, U.S.A.

L. PfeifferAT&T Bell Laboratories, Murray Hill, New Jersey, U.S.A.

IMIRIS1 MATERIALS RESEARCH SOCIETYPittsburgh, Pennsylvania






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Contents

PREFACE xv

ACKNOWLEDGMENTS xix

PART I: ZONE MELTING AND RECRYSTALLIZATION

* CRYSTALLINE FILMS ON AMORPHOUS SUBSTRATES BY ZONE MELTING ANDSURFACE-ENERGY-DRIVEN GRAIN GROWTH IN CONJUNCTION WITH PATTERNING

H.I. Smith, M.W. Geis, C.V. Thompson and C.K. Chen 3

A STUDY OF MELTING AND RESOLIDIFICATION OF SILICON-ON-INSULATORSTRUCTURES FORMED BY LATERAL EPITAXY

D.A. Williams, R.A. McMahon, D.G. Hasko, H. Ahmed,G.F. Hopper and D.J. Godfrey 15

FORMATION OF FACETS AT THE SOLID-MELT INTERFACE IN SILICONE. Arnold, U. Landman, S. Ramesh, W.D. Luedtke, R.N. Barnett,C.L. Cleveland, A. Martinez, H. Baumgart and B.Khan 21

REDUCED SUBBOUNDARY MISALIGNMENT IN SOI FILMS SCANNED ATLOW VELOCITIES

L. Pfeiffer, K.W. West, D.C. Joy, J.M. Gibson and A.E. Gelman 29

ELIMINATION OF SUBBOUNDARIES FROM ZONE-MELTING-RECRYSTALLIZEDSILICON-ON-INSULATOR FILMS

M.W. Geis, C.K. Chen, H.I. Smith, P.M. Nitishin,B-Y. Tsaur and R.W. Mountain 39

ADDRESSING THE PROBLEMS OF AGGLOMERATION, SURFACE ROUGHNESSAND CRYSTAL IMPERFECTION IN SOI FILMS

S. Ramesh, A. Martinez, J. Petruzzello, H. Baumgartand E. Arnold 45

CAPPING TECHNIQUES FOR ZONE-MELTING-RECRYSTALLIZEDSi-ON-INSULATOR FILMS

C.K. Chen, L. Pfeiffer, K.W. West, M.W. Geis, S. Darack,G. Achaibar, R.W. Mountain and B-Y. Tsaur 53

IMPROVEMENT OF WETTING OF SILICON ON INSULATOR DURING LAMPZONE MELTING USING PLASMA NITRIDATION

M. Haond, D. Dutartre, R. Pantel, A. Straboni and B. Vuillermoz 59

TWIN STABILIZED PLANAR GROWTH OF SOI FILMSH. Baumgart, F. Phillipp, S. Ramesh, B. Khan, A. Martinezand E. Arnold 65

TWO-BEAM LASER RECRYSTALLIZATION OF SILICON ON AN INSULATINGSUBSTRATE

S. Dasgupta, H.E. Jackson and J.T. Boyd 71

A SEEDED CHANNEL APPROACH TO SILICON-ON-INSULATOR TECHNOLOGYC.H. Ting, W. Baerg, H.Y. Lin, B. Siu, T. Hwa, J.C. Sturmand J.F. Gibbons 77

<100>SINGLE CRYSTAL SOI FILMS OBTAINED ON 4. in WAFERSUSING HALOGEN LAMPS

M. Haond, D. Dutartre and D. Bensahel 83

* Invited paper

vii






MICROSCOPY OF THIN Si FILMS DURING LAMP ZONE MELTINGD. Dutartre, M. Haond and D. Bensahel 89

LARGE GRAIN GROWTH OF SILICON FILMS ON LOW TEMPERATUREGLASS SUBSTRATES

C.E. Bleil and J.R. Troxell 95

ZONE MELTING RECYSTALLIZATION OF GaAs FILMS ON OXIDIZED SiW. Zhu and W. Wang 101

LASER RECRYSTALLIZATION OF MOCVD POLY-GaAs ON INSULATING SUBSTRATESX.M. Bao, X.F. Huang, P.Hanand J.M. Yin 107

LASER RECRYSTALLIZATION OF InP FILMS ON OXIDIZED Si SUBSTRATEX. Li, W. Zhu, C. Lin, W. Wang and S. Tsou 113

PART II: HETEROEPITAXY AND POROUS SILICON

* SOLID PHASE EPITAXIAL RECRYSTALLIZATION OF SOS, WITH APPLICATIONSTO SUBMICROMETER CMOS AND BIPOLAR DEVICES

P.K. Vasudev 121

* FORMATION OF EPITAXIAL SOI STRUCTURES USING ALKALINE EARTHFLUORIDE FILMS

H. Ishiwara and T. Asano 129

* MOS CIRCUITS ON SILICON-BORON PHOSPHIDE-SILICON MULTILAYERSD.J. Dumin 137

HIGH-QUALITY THIN Si FILM BY SPE REGROWTH ON EPITAXIALLYGROWN SPINEL

T. Kimura, H. Yamawaki, Y. Arimoto, K. Ikeda, M. Iharaand M. Ozeki 143

REDUCTION OF Ca and F SEGREGATED AT THE SURFACE OF ASi/CaF2/Si(100) STRUCTURE BY SOLID PHASE EPITAXY OF Si

M. Sasaki, H. Onoda and N. Hirashita 149

IMPROVING THE STRUCTURAL AND ELECTRICAL PROPERTIES OFEPITAXIAL CaF2 ON Si BY RAPID THERMAL ANNEALING

J.M. Phillips. M.L. Manger, L. Pfeiffer, D.C. Joy,T.P. Smith, III, W.M. Augustyniak and K.W. West 155

ENHANCING THE GRAIN SIZE AND {110 } TEXTURE OF POLYCRYSTALLINESi FILMS BY SEED SELECTION THROUGH ION CHANNELING: IMPLANT-DOSE DEPENDENCE

K. T-Y. Kung and R. Reif 163

MORPHOLOGY OF SILICON ISLANDS GROWN BY SELECTIVE EPITAXYOVER SILICON DIOXIDE

S.T. Liu, K. Newstrom, M. Hibbs-Brenner, R.J. Stokes,B. Hoefflinger, G. Neudeck, R. Zingg, L. Bousse and J.D. Meindl 169

COMPARISON OF STRUCTURAL AND ELECTRICAL CHARACTERISTICS OFSOLID-PHASE EPITAXIAL FILMS RECRYSTALLIZED BY RAPID THERMALANNEALING AND FURNACE ANNEALING

R. Sundaresan, P.-H. Chang, S.D.S. Malhi and H.W. Lam 175

* Invited papers

viii






GALLIUM ARSENIDE LAYERS GROWN BY MBE ON GERMANIUMISLANDS ON INSULATOR

M. Takai, Y. Kodama, T. Tanigawa, K. Kobayashi,K. Gamo and S. Namba 181

EPITAXIAL REGROWTH OF a-GaAs/(100) SILICON BY EXCIMERLASER ANNEALING AT 248 nm

A. Christou, T. Efthimiopoulos, G. Kyriakidis and C. Varmazis 187

Si-MBE SOIT.L. Lin, S.C. Chen, K.L. Wang and S. Iyer 193

LPCVD TUNGSTEN DEPOSITION ON POROUS SILICON FOR FORMATIONOF BURIED CONDUCTORS

S.S. Tsao and R.S. Blewer 199

PART III: BURIED OXIDE AND NITRIDE BY IMPLANTATION

* SILICON ON INSULATOR FORMED BY 0 + OR N+ ION IMPLANTATIONP.L.F. Hemment 207

* EPITAXIAL GROWTH ON SIMOX WAFERSH.W. Lam 223

IMPROVED SOI FILMS BY HIGH DOSE OXYGEN IMPLANTATIONAND LAMP ANNEALING

G.K. Celler, P.L.F. Hemment, K.W. West and J.M. Gibson 227

FORMATION OF BURIED Si02 BY HIGH DOSE IMPLANTATION OF OXYGENAT ROOM AND LIQUID NITROGEN TEMPERATURES

F. Namavar, J.I. Budnick, F.H. Sanchez and H.C. Hayden 233

HEAVY METAL GETTERING IN IMPLANTED BURIED-OXIDE STRUCTUREST.I. Kamins and S.Y. Chiang 239

DONOR CREATION DURING OXYGEN IMPLANTED BURIED OXIDE FORMATIONM. Delfino and P.K. Chu 245

THE EFFECTS OF ANNEALING TEMPERATURE ON THE CHARACTERISTICSOF BURIED OXIDE SILICON-ON-INSULATOR

B.-Y. Mao, P.-H. Chang, H.W. Lam, B.W. Shen and J.A. Keenan 251

EFFECT OF ANNEALING ON THE STRUCTURE OF BURIED SiO2 LAYERSFORMED BY ELEVATED TEMPERATURE HIGH DOSE OXYGEN IMPLANTATION

S.J. Krause, C O . Jung, S.R. Wilson, R.P. Lorigan and M.E. Burnham 257

STRAIN AND DAMAGE IN SILICON DUE TO A DEEP OXYGEN IMPLANTATIONT. Vreeland, Jr. and T.S. Jayadev 263

THE PHYSICAL AND ELECTRICAL PROPERTIES OF BURIED NITRIDE SOISTRUCTURES SYNTHESIZED BY NITROGEN ION IMPLANTATION

C. Slawinski, B.-Y. Mao, P.-H. Chang, H.W. Lam and J.A. Keenan 269

FORMATION OF SILICON ON INSULATOR STRUCTURES BY IMPLANTED NITROGENL. Nesbit, S. Stiffler, G. Slusser and H. Vinton 273

STUDY OF DOSE AND DOSE RATE IN THE IMPLANTATION OF NITROGENISOTOPES INTO Si(100)

F. Namavar, J.I. Budnick, A. Fasihuddin, F.H. Sanchezand H.C. Hayden 281

* Invited papers

ix






PART IV: CHARACTERIZATION OF SOI THIN FILMS

* THERMAL STRESS DURING ZONE-MELTING-RECRYSTALLIZATION OFSILICON ON INSULATOR FILMS: THE ORIGIN OF SUBBOUNDARIESAND IN-PLANE ORIENTATION OF SOI

J.M. Gibson, L.N. Pfeiffer, K.W. West and D.C. Joy 289

* THE MICROCHEMISTRY OF THE SiO2/SILICON INTERFACEC.R.M. Grovenor 301

PROPERTIES OF THIN FILMS AFTER FOCUSED BEAM PROCESSINGI.H. Campbell, P.M. Fauchet and F. Adar 311

INTERPRETATION OF UV REFLECTANCE MEASUREMENTS ON SILICON-ON-SAPPHIRE BY SPECTRAL REFLECTANCE AND SPECTROSCOPICELLIPSOMETRY STUDIES

C. Pickering, A.M. Hodge, A.C. Daw, D.J. Robbins,P.J. Pearson and R. Greef 317

A TECHNIQUE FOR IN-SITU DETECTION OF GROWTH DISLOCATIONSS.D. Peteves, J.A. Sarreal and G.J. Abbaschian 323

MECHANICAL PROPERTIES OF Ga^Io^AsS. Guruswamy, J.P. Hirth and K.T. Faber 329

* ELECTRICAL CHARACTERIZATION OF CRYSTALLIZED-SILICON THIN FILMSN.M. Johnson 337

MINORITY CARRIER LIFETIME STUDIES IN HALOGEN LAMPRECRYSTALLIZED SOI FILMS

A. Chantre, D. Ronzani and D.P. Vu 349

ELECTRICAL CHARACTERIZATION OF BEAM-RECRYSTALLIZED SOISTRUCTURES USING A DEPLETION MODE TRANSISTOR

D.P. Vu, A. Chantre, D. Ronzani and J.C. Pfister 357

PART V: DEVICE AND CIRCUIT APPLICATIONS

* ASSESSMENT OF SILICON-ON-INSULATOR TECHNOLOGIES FOR VLSIB-Y. Tsaur 365

* INTEGRATION OF SEMICONDUCTOR AND MAGNETIC BUBBLE DEVICES:SOI ON GARNET

D.W. Greve, M.H. Kryder ad P.H.L. Rasky 375

* FABRICATION PROCESS, APPLICATION AND FUTURE FOR AN ELEMENTALLEVEL VERTICALLY INTEGRATED CIRCUIT (ELVIC)

T. Enomoto 383

VERTICAL BIPOLAR TRANSISTORS AND A MERGED 3-D VERTICAL BIPOLAR-MOSDEVICE IN RECRYSTALLIZED POLYSILICON

J.C. Sturm and J.F. Gibbons 395

PHOTOCONDUCTION IN THIN-FILM TRANSISTORS FABRICATED FROMLASER-CRYSTALLIZED SILICON ON FUSED QUARTZ

A. Chiang, M.H. Zarzycki and N.M. Johnson 401

LATCHUP FREE LATERAL CMOS ON LASER RECRYSTALLIZED SILICONS. Sritharan, R. Solanki, G.J. Collins, J. Fukumoto,N. Szluk and D. Ellsworth 407

* Invited papers






A METHOD TO DETERMINE THE DENSITY OF SURFACE STATES ANDINTERFACIAL CHARGE DENSITY IN N-CHANNEL SOS MOSFET'S

N.K. Annamalai and A.N. Khondker 413

* PROCESS AND DEVICE CONSIDERATIONS FOR SMALL GRAINPOLYSILICON TRANSISTORS

H. Shichijo, S.D.S. Malhi, R. Sundaresan, S.K. Banerjeeand H.W. Lam 419

LOW TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM DEVICESFOR LARGE AREA ELECTRONICS

W.G. Hawkins 429

LEAKAGE CURRENTS IN P-CHANNEL ACCUMULATION MODE TFT'sB.A. Khan, T. Marshall, E. Arnold and R. Pandya 435

AN ANALYTICAL MODEL FOR THE THRESHOLD VOLTAGE OFPOLYSILICON MOSFET's

A.F.M. Anwar and A.N. Khondker 441

A COMPREHENSIVE ANALYTIC MODEL OF ACCUMULATION-MODE MOSFET'sIN POLYSILICON THIN FILMS

S.S. Ahmed and D.M. Kim 447

DEPENDENCE OF a-Si:H TFTs PERFORMANCES ON DEPOSITION ANDPROCESS PARAMETERS

E. Chartier, N. Szydlo, F. Boulitrop, N. Proust and J. Magarino 453

LOW TEMPERATURE GATE DIELECTRICS FOR TFT APPLICATIONSB.L. Jones and D.B. Meakin 459

PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY STUDIES ON a-Si:H

J.G. Mendoza-Alvarez, G. Torres D. and J. Gonzalez-Hernandez 465

AUTHOR INDEX 471

SUBJECT INDEX 473

* Invited paper











Preface

This volume contains selected papers presented at the symposium on"Semiconductor-on-lnsulator (SOI) and Thin Film Transistor (TFT) Technology," held inBoston, Massachusetts, December 3-6, 1985. The symposium was organized to assess theprogress in SOI material technologies, as well as their applications to VLSI circuits and thinfilm transistors. Sixteen distinguished scientists were invited to review research activities inseven topical sessions. Fifty-five contributed papers reported on current efforts and recentdiscoveries in oral and poster presentations. The conference was attended by aninternational audience representing the USA, France, England, Japan, and China.

The papers in this book have been arranged into five parts. The first three parts,"Zone Melting and Recrystallization," "Heteroepitaxy and Porous Silicon," and "BuriedOxide and Nitride by Implantation," deal with specific approaches for fabricating SOI materialand structures. The last two parts, "Characterization of SOI Thin Films" and "Device andCircuit Applications," are more general in scope.

Reports on the zone melt and recrystallization (ZMR) technique in Part I suggest thatthe long intractable problem of low angle grain boundary formation is at last showing signsof being understood and controlled. Very large area single crystalline silicon thin films, withvery low angle "dotted" subboundaries or arrays of isolated dislocations as the only defects,are described in several papers. The best of this material had total dislocation densitiesbetween 105 to 106/cm2. This was achieved by empirically choosing the thermal power,scan rate, or patterning method to generate a suitable thermal gradient across the melt-solidinterface. A few papers put forth new models of subboundary formation which promise tostimulate further experimental progress. Simulation of heat flow and modeling of moleculardynamics provide more analytical tools to elucidate the mechanism of ZMR in thin films. Therole of nitrogen in the capping layer, for preventing melt agglomeration by improved wettingat the molten Si/SiO2 cap interface, is clearly demonstrated in three papers. Lasercrystallization of Ill-V compounds has resulted in polycrystalline materials with grains of afew microns.

Heteroepitaxy usually allows lower processing temperature than the melt andrecrystallization approach. Two types of research activities are represented in Part II. Withthe well established silicon-on-sapphire (SOS) technology, advances are illustrated by thehigh-performance submicron CMOS circuits fabricated in low-defect (< 0.1% microtwin) SOSfilms grown by solid phase epitaxy (SPE). With other materials, novel techniques arediscussed for growing various combinations of semiconducting films of Si, Ge or Ill-Vcompounds with insulating layers of alkaline earth fluorides, boron phosphide, spinel or SiO2.The results presented here reflect significant improvement in crystalline quality and surfacemorphology for many of these films. Some of the techniques used were amorphization andsubsequent SPE, low temperature predeposition, lattice constant matching withmixed-compounds, patterning of underlying layers, laser or rapid thermal annealing, aspecial gas mixture in epitaxial reactors, and a porous silicon substrate. Si films formed bythe predeposition technique on CaF2 have a xm i n of less than 10%. Working devices, withcharacteristics approaching those of bulk semiconductor devices, are also reported inseveral papers. Most noteworthy are the three dimensional circuits with functioning devicesin up to four layers of Si/BP.






There were few papers presented at the symposium on porous silicon in theconventional SOI sense. However, a novel derivation of the technique to generate a buriedconducting layer in silicon stimulated the imagination of many in the audience.

Part III gives an account of the flourishing activities and dramatic advancements in ionbeam synthesized insulators now becoming possible with the availability of high currentimplanters. There are reports on the use of post O + implantation annealing atunprecedentedly high temperatures (1300-1400°C) to achieve a low-defect SOI overlayer, toannihilate O thermal donors near the top Si surface, and to generate abrupt Si/SiO2/Siinterfaces. These Si overlayers were characterized by a x m j n

o f 3-3%, and threadingdislocation densities of 108 to 109/cm2. Papers on gettering of heavy metals byimplant-damaged regions, and achievement of high quality epitaxial Si grown on oxygenimplanted SOI (SIMOX), further suggest the readiness of this material for device and circuitfabrication. Although in its relative infancy, buried nitride requires a lower post implantationannealing temperature (1200-1250°C) to form abrupt interfaces and to generate a Sioverlayer of comparable quality (xmjn = 3%)- Still, problems in void formation, electricalleakage of the buried nitride, and N thermal donor formation remain causes for concern onits practical applications.

Experimental evidence that thermal stress is partly responsible for the formation ofsubboundaries and the predominace of the <100> texture in ZMR Si is offered by the firstpaper in Part IV. The following papers discuss application of various structuralcharacterization techniques, including a pulsed laser atom probe for the microscopic Si/SiO2

interface, a Raman microprobe for local stress, a UV reflectance and ellipsometry study ofSOS material, and the use of Seebeck emf for in-situ detection of growth dislocations acrossthe solid/liquid interface. A trio of papers on electrical characterization expound on theadvantage of using depletion mode transistors in the current transient mode of deep leveltransient spectroscopy for their high sensitivity, small sampling area, and versatility inmeasurement configurations. Minority carrier generation lifetimes have been clearlycorrelated with such defects as precipitates of impurities, subboundaries or interface statesin recrystallized films. Depth profiles of mobility can also be obtained.

One of the major applications of SOI materials is direct replacement of certain criticalbulk Si VLSI circuits with those isolated from the Si substrate by a thin insulator. The firstpaper in Part V very eloquently states the potential advantages of complete dielectricisolation, increased packing density, reduced parasitic capacitance and radiation hardness.High performance MOS and bipolar devices and SSI circuits have been built routinely tocharacterize the ZMR and SPE material. Fully functioning LSI circuits have also beendemonstrated in ZMR Si and SIMOX. However, improvement in material quality and/orinnovation in device design are still needed to implement submicron VLSI circuits in SOI.

A case in point is the use of polysilicon transistors in 3-dimensional integratedcircuits. The decision to build less critical components in the inferior polysilicon SOImaterial and the ensuing simplified process greatly facilitated demonstration andcommercialization of 64K and 256K VLSI CMOS memories. An even more radical approachto 3-D ICs is the ELVIC (Elemental Level Vertically Integrated Circuit) method. Two IC chipsfabricated with two different technologies (for example, NMOS and PMOS) are electricallymerged through vertical interconnects by thermal compression bonding. Initial success hasbeen shown in 31-stage ring oscillators. As for 3-D ICs with more than one layer of SOIstructures, heteroepitaxy in solid state seems to offer the most promise because of its lowprocessing temperature.






The other major application of SOI materials is building thin film transistors (TFTs) onnon-Si substrates for opto-, acousto-, or magneto-electronic input/output devices toachieve parallel data transmission at system interfaces. Examples in this symposium includea silicon-on-garnet material for magnetic bubble memories, an image sensor array, and theflat panel displays referred to by numerous papers throughout the book. Since the substrateoften plays an active role in the total system, process compatibility is usually more importantthan obtaining defect-free SOI material. Indeed, both polysilicon and amorphous silicon areoften preferred over recrystallized Si in TFT fabrication because of their low processingtemperature and large area deposition capability. The five papers on polysilicon TFTs dealwith process optimization, grain boundary passivation, diffusion doping, leakage currentcontrol, and device modeling. The final three papers pertaining to amorphous silicon TFTsfabrication, gate dielectrics, and photoluminescence properties provide only a sample of thevast volume of literature on amorphous silicon material and devices. The reader is referredto other recent volumes of MRS Proceedings for more extensive coverage on this subject.

Symposium Chairs

Anne Chiang Michael W. Geis Loren Pfeiffer

June 1986











Acknowledgments

We wish to thank all of the contributors and participants who made the symposium sosuccessful. We particularly would like to acknowledge the invited speakers, who providedexcellent summaries of specific areas and set the tone of the meeting. They are:

R. H. Baughman K. A. JacksonD. J. Dumin N. M. JohnsonT. Enomoto H. W. LamJ. M. Gibson H. ShichijoD. W. Greve H.. I. SmithC. R. M. Grovenor B-Y. TsaurP. L. F. Hemment P. K. VasudevH. Ishiwara M. S. Wrighton

We are also indebted to the session chairs, who directed the sessions, guided thediscussions, and gave invaluable help in getting the papers refereed. They are:

H. Baumgart J. M. PhillipsG. K. Celler R. F. PinizzottoC. K. Chen F. A. PonceT. I. Kamins J. A. RothS. Malhi J. C. SturmL. A. Nesbit

It is our great pleasure to acknowledge, with gratitude, the administrative support from XeroxCorporation, and the financial support provided by the Rome Air Development Center; theArmy Research Office, Materials Science Division; and the Naval Research Laboratory.

Finally we wish to express our appreciation to V. Moffat (Xerox), I. Collins (Lincoln Lab), andH. Weston (AT&T Bell Labs) for excellent secretarial support, as well as S. Marsh and N.Geis for expert assistance in putting this book together.

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Semiconductor-on-Insulator and Thin Film …assets.cambridge.org/97809318/37180/frontmatter/...MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS VOLUME 53 Semiconductor-on-Insulator